The invention relates to the technical field of
semiconductor device testing, in particular to a SiC
MOSFET power cycle testing method which comprises the following steps: S1, building a composite environment testing platform, configuring
dynamic testing parameters, automatically calculating a physical boundary and collecting sensor data in real time; s2, establishing a
finite element simulation model based on the physical boundary and sensor data, and outputting optimized dynamic test parameters and a simulated
stress distribution diagram; s3, synchronously applying composite stress according to the dynamic test parameters and the
stress distribution diagram, and collecting multi-dimensional
test data in real time; when the
system is used, through dynamic boundary calculation and real-
time data acquisition, the intelligent degree and reliability of the test are improved, the test period is shortened, the failure prediction accuracy is improved, the
system is suitable for reliability evaluation of SiC
MOSFET devices in the fields of
new energy,
aerospace and the like, a large number of physical tests are avoided through virtual
simulation, and the reliability of the SiC
MOSFET devices is improved. And reduction of device loss and resource waste is facilitated.