1196 results about "Junction temperature" patented technology

The invention discloses a self-adaptive nanosecond driving protection method for a high-voltage IGBT power module. The method comprises the steps that data such as high-voltage side voltage, collector current, grid voltage and junction temperature are collected and preprocessed, and standardized feature vectors are obtained; extracting statistical features, frequency domain features and trend features to obtain a comprehensive feature vector; density clustering is carried out based on historical fault data, and an extreme value model is established by using generalized Pareto distribution to generate an optimized threshold value; constructing a time sequence feature matrix, predicting a fault probability by adopting a time sequence convolutional network and a long-short term memory network, and generating a protection strategy parameter; and generating an optimal driving waveform and a control signal, and updating parameters according to an actual response effect. According to the invention, predictive protection and nanosecond-level precise control of faults are realized, and the reliability and performance of the high-voltage IGBT module are remarkably improved.

The invention provides a power management chip high-low side driving signal time sequence optimization method and system. The method comprises the following steps: acquiring temperature data of a power management chip under a switch switching transient working condition through an infrared thermal imaging technology, and synchronously acquiring three-dimensional temperature field distribution of junction temperatures on the surface and inside a packaging layer; based on the space continuity of a temperature field, extracting the temperature change characteristics of a power device area, converting the temperature gradient into Seebeck voltage by using a thermoelectric material embedded in a hot spot area, and constructing a dynamic thermoelectric feedback network; according to Seebeck voltage data, a coupling relation between hot carrier concentration and driving signal phase deviation is established, and disturbance of hot carrier mobility change on MOSFET switching delay is quantified; the rising / falling edge slope of the grid voltage is adjusted based on the coupling relation, the phase deviation caused by the hot carrier effect is eliminated through dynamic compensation, and the switching performance is optimized. The dynamic response precision of the power management chip is improved.

The invention relates to an inverter IGBT junction temperature prediction method and related equipment, and the method comprises the following steps: generating a loss characteristic spectrum through collecting IGBT electrical parameters and analyzing switching loss; calculating surface heat flux density, and constructing a heat flux distribution matrix. And performing thermal-electric coupling analysis by combining the two to obtain a junction temperature dynamic response sequence. Fourier transform is utilized to extract temperature fluctuation harmonic features, and a feature set is constructed; and extrapolating and predicting a junction temperature change trend based on the feature set, and outputting an IGBT junction temperature early warning signal through threshold judgment. The technical problem that the service life of a device is affected due to the fact that a large amount of loss is generated due to frequent switching actions in the working process of the inverter, the junction temperature of a chip rises and even temperature fluctuation occurs is solved.

The invention provides a temperature compensation method and device for a silicon carbide MOS drive control chip, and the method comprises the steps: obtaining a junction temperature-electrical parameter set of a silicon carbide MOS, and carrying out the thermoelectric coupling simulation modeling processing of a junction temperature-electrical parameter mapping data set, and obtaining three-dimensional temperature-efficiency characteristic data; performing real-time parameter analysis and dynamic execution on the three-dimensional temperature-efficiency characteristic data to obtain an optimized switching characteristic waveform; extracting the optimized switching characteristic waveform frequency domain characteristics, and generating a dynamic frequency modulation parameter; and performing dead time iterative optimization on the dynamic frequency modulation parameters to obtain a control parameter combination of the silicon carbide MOS.

The invention provides a method and system for preparing a high-temperature anti-aging test board for chip testing, and relates to the technical field of data energy storage and resource scheduling, and the method comprises the steps: designing a schematic circuit diagram and a PCB wiring scheme; a test plate is made of a high-temperature resistant material; bare board verification, electrical performance verification, program setting verification, high temperature verification and junction temperature measurement verification are carried out; using data is recorded, ultrasonic cleaning and drying are carried out, and a performance evaluation model is established through a hardware management system to judge whether maintenance or replacement is needed. According to the invention, the accuracy of chip testing in a high-temperature environment is improved, and the service life of the test board is prolonged.

The invention discloses a three-temperature test method and device for a semiconductor chip, and relates to the technical field of semiconductor chip testing, and the method comprises the steps: inputting an initialization parameter set into an impedance temperature mapping model, carrying out the phase angle analysis and multi-band feature fusion through a broadband impedance spectrum analysis method, obtaining a chip junction temperature instantaneous value, and carrying out the measurement of the junction temperature instantaneous value. A PID controller is utilized to dynamically compensate a junction temperature instantaneous value of a chip, a fuzzy rule base inference engine is utilized to map the junction temperature instantaneous value into an execution instruction set, the execution instruction set is converted into a bidirectional voltage signal through pulse width modulation, a semiconductor chilling plate is driven to perform bidirectional temperature rise and drop control in a three-temperature environment, and real-time temperature change test data is synchronously acquired. According to the method, the junction temperature instantaneous value of the chip can be more accurately obtained by combining broadband impedance spectroscopy analysis with a multi-band characteristic fusion technology, and meanwhile, the PID controller is combined with the fuzzy rule base inference engine, so that a response can be quickly made under the condition that the temperature is quickly changed, and the response capability is greatly improved.

The invention discloses a temperature control and noise reduction method for an analog optical module, and relates to the technical field of data processing. The method comprises the following steps: collecting and preprocessing an original temperature signal, environment temperature time sequence data and an optical wavelength original detection value of an optical module; improving the LSTM model, constructing a junction temperature dynamic prediction model, and outputting prediction data; a pre-trained BP neural network is utilized to calculate the temperature compensation amount according to the real-time wavelength offset, and a PPO reinforcement learning algorithm is adopted to optimize with the temperature stability, the wavelength offset and the TEC power consumption as multiple targets to obtain an optimal PID parameter mapping table; and finally, predicting, compensating and optimizing parameters are fused, and control output for driving the TEC is generated through a multi-mode intelligent decision. The problems of insufficient control precision and response lag are effectively solved, cooperative high-precision control over the junction temperature and the emission wavelength of the laser is achieved, transmission noise is remarkably reduced, and meanwhile system energy consumption and the self-adaptive capacity are considered.

The invention relates to the technical field of elevator control and fault diagnosis, and discloses an elevator inverter fault pre-diagnosis and fault-tolerant control system and method based on digital twinning, and the system comprises a high-fidelity digital twinning body building module which is used for building a digital twinning body of an elevator inverter, the digital twin integrates an electric-thermal-stress coupling model, a device-level aging model, a parasitic parameter influence model and a driving circuit and protection logic model; wherein the electric-thermal-stress coupling model is used for simulating loss, junction temperature fluctuation and thermal stress circulation of a power device, and the device-level aging model is used for representing a time-varying degradation rule of device parameters. Through deep fusion of a digital twin technology, fault diagnosis and fault-tolerant control, a closed-loop system of'perception-pre-diagnosis-decision-control 'is constructed, the safety, reliability and economical efficiency of the elevator inverter are comprehensively improved, and the method has important significance in promoting transformation of the elevator industry to intelligent and unmanned maintenance.

The invention discloses a CPLD-driven IGBT short-circuit current dynamic monitoring method and system, and relates to the technical field of power electronics, and the method comprises the specific steps of S100 real-time data acquisition, S200 dynamic threshold calculation, S300 short-circuit state judgment, S400 rapid protection execution, and S500 fault data recording and uploading. Accurate and prospective judgment of the short circuit state of the IGBT is achieved, two stress parameters including the direct-current bus voltage and the junction temperature serve as independent variables, when the bus voltage rises, the voltage stress borne by the IGBT in the turn-off period is increased, meanwhile, the current peak at the short circuit moment is more remarkable, early warning is conducted in advance by dynamically lowering the threshold value, and therefore the short circuit state of the IGBT is accurately judged. According to the mechanism, the monitoring system does not simply respond to the occurred overcurrent, but can pre-judge the safety boundary of the device under the current working condition, so that intervention is implemented before the current really reaches a dangerous peak value, and a protection blind area under a severe working condition is effectively avoided.

The invention discloses an online aging state monitoring method and system for a silicon carbide MOSFET, and belongs to the technical field of semiconductor device monitoring, and the method specifically comprises the steps: collecting the working voltage, working current and junction temperature data of the silicon carbide MOSFET in real time, analyzing and processing the data through a data processing unit, and extracting the aging state characteristic parameters of the MOSFET; a dynamic aging state evaluation model fusing multi-source data and time sequence information is adopted to evaluate the aging state of the silicon carbide MOSFET, and a result is output to a display unit; according to the method, the aging state of the silicon carbide MOSFET is monitored, multi-level alarm strategies are set, different levels of alarm signals are triggered according to the aging state, meanwhile, feedback data are collected to optimize the state evaluation model, real-time and accurate monitoring of the aging state of the silicon carbide MOSFET is achieved, and the reliability and stability of a power electronic system are improved.

The invention discloses an IGBT junction temperature real-time decoupling modeling method and system based on dynamic electric heating compensation, and relates to the technical field of state monitoring of power electronic devices. At present, junction temperature estimation is not accurate due to IGBT on-state voltage drop measurement distortion and chip internal thermal gradient in a high-voltage environment. The method comprises the following steps: in an offline stage, constructing an ideal electrothermal characteristic database of an IGBT, a dynamic temperature gradient compensation database in a chip and Foster thermal network model parameters; in the on-line stage, synchronous sampling and preprocessing are carried out on IGBT module operation parameters; combining online real-time parameters with an offline database by using an adaptive Kalman filter, and iteratively and cooperatively estimating the real-time junction temperature and loss of the IGBT; and finally, outputting and applying the estimated accurate junction temperature and loss data. According to the technical scheme, the hot spot effect in the chip is accurately decoupled, the junction temperature estimation precision and the robustness of online monitoring are improved, and core data support is provided for fine thermal management and early fault early warning of the flexible direct current converter valve.

The invention discloses an electromechanical composite transmission IGBT junction temperature prediction method based on a NODE reduced-order model. A thermal simulation model is constructed according to a real physical model mechanism, a material and a thermal transfer principle of an IGBT; in the constructed thermal simulation model, performing simulation calculation according to the monitored time sequence data to obtain the junction temperature of the IGBT corresponding to the time change, jointly establishing a data set for training and testing with the monitored data, establishing a NODE neural network order reduction model comprising an input layer, a hidden layer and an output layer, and training the NODE neural network order reduction model by using the data set; and inputting the IGBT related time sequence data into the constructed NODE neural network reduced-order model for prediction to obtain the time sequence data of the junction temperature. According to the method, the IGBT junction temperature can be predicted in real time, the calculation efficiency is high, the interpretability is high, the long-term dependence problem can be better solved, and the method is suitable for complex working conditions.

The invention relates to the technical field of chip test engineering control, in particular to an active temperature control method and system for a chip aging tester, and the method comprises the steps: analyzing a test process according to test task parameters, and evaluating the expected thermal load change rate of a test chip, so as to dynamically generate a chip target junction temperature control curve; based on the chip target junction temperature control curve, the actual chip junction temperature and the current actual furnace temperature, the theoretical furnace temperature is obtained through a junction temperature closed-loop control algorithm, the furnace temperature compensation amount is calculated through a feedforward compensation algorithm in combination with the test state parameters, and the ideal furnace temperature is obtained according to the theoretical furnace temperature and the furnace temperature compensation amount; the actual temperature control quantity is obtained according to the basic temperature adjusting quantity and the temperature control compensation quantity, a preset chip target junction temperature control curve can be tracked more accurately, transient and steady state errors caused by test program switching and environment fluctuation can be more effectively restrained, and control over the chip junction temperature with higher precision and faster response is achieved.

The invention provides an IGBT junction temperature prediction method and system based on dynamic thermal impedance correction. The method comprises the following steps: acquiring temperature data in real time, reversely deducing IGBT loss in combination with a pre-constructed thermal network model, and storing the IGBT loss in historical data; obtaining an IGBT loss average value under the same working condition, and calculating a difference value between the IGBT loss average value and the IGBT loss and a specific value of the IGBT loss average value to obtain a loss offset coefficient; judging whether the loss deviation coefficient is continuously greater than a preset value in a continuous period, if so, judging that the heat-conducting silicone grease is aged, calculating an aging coefficient through loss data and temperature data in the continuous period, and correcting the thermal network model by adopting the aging coefficient; and obtaining the corrected internal transient thermal impedance of the IGBT and the loss of the IGBT, and further predicting the junction temperature of the IGBT. According to the method, the thermal network model is adopted to reversely deduce the real-time loss power of the IGBT, and electric parameter drift errors are avoided; and a dynamic thermal impedance correction mechanism is introduced to ensure long-term accuracy of junction temperature prediction.

The invention provides a transient current capability improvement control system and method of a wind and light power generation system. The system comprises a self-synchronizing voltage source control module, a junction temperature prediction module, a transient current improvement control module, a current instruction calculation module and a transient current precise control module. According to the invention, online observation of the junction temperature of the wind-solar converter power device can be realized, the maximum short-circuit current which can be output can be accurately predicted, the DC bus voltage, the switching frequency and the modulation strategy are adjusted when the power grid has a fault, the junction temperature of the power device is reduced, and the transient current endurance capability of the power device is improved. And the transient current is accurately controlled to limit the utilization of the transient capability of the power device.

The invention discloses a high-precision power supply output correction method based on a digital pre-distortion technology, and relates to the technical field of power electronics, and the method comprises the steps: integrating an electricity-heat-magnetism real-time combined observer, and inputting parameters including a power supply output voltage, a current, a power device junction temperature, a magnetic element surface temperature, an environment temperature, and an input voltage ripple; using a hierarchical memory depth pre-distortion compensator to generate an anti-phase pre-distortion signal containing long time domain thermal constant compensation and short time domain capacitance energy storage compensation based on modeling engine output; based on a double-ring adaptive updating module, an inner ring updates electrical parameters, including on resistance and dead time, by taking a switching period as a reference, and an outer ring updates thermomagnetic parameters, including thermal resistance and a magnetic core saturation point, in a minute-level period; and the DAC is connected in series with a pre-distortion signal output end through an anti-interference execution channel, and comprises a noise shaping DAC and a driving stage for delay matching. According to the invention, through an electric-thermal-magnetic three-field combined observation architecture, the limitation of traditional single physical field monitoring is broken through.

The invention discloses a modeling and optimizing method for a thermal resistance network of a high-power semiconductor module. The method is based on an electricity-heat-fluid field dynamic coupling simulation technology, the turbulence state is judged through Reynolds numbers, and the enhancement effect of fluid flow on heat transfer is quantified in combination with a standard k-epsilon model and a Navier-Stokes equation; a module thermal resistance curve is extracted through transient simulation, thermal resistance parameters are fitted through a high-order Foster model, a thermal resistance network model containing self-heating impedance and coupling thermal impedance is constructed, and matrix representation of temperature distribution in a multi-chip heat source coupling scene is achieved. Loss parameters are further corrected through iteration in combination with experimental data. Experimental results show that the model has high precision in the aspect of junction temperature prediction, and the calculation efficiency is remarkably improved compared with a traditional finite element method. The invention provides a high-precision and low-complexity solution for the thermal management design of the high-power semiconductor module, and can be widely applied to the fields of new energy automobile electric control systems and high-density power electronic equipment.

The invention discloses a junction temperature prediction method based on SiC MOSFET turn-off loss, and belongs to the technical field of power electronics and electricians. The junction temperature prediction method combines a turn-off loss model with a junction temperature prediction model based on turn-off loss, and comprises the following steps: firstly, establishing a SiC MOSFET turn-off loss model considering parasitic parameters, secondly, establishing the junction temperature prediction model based on the SiC MOSFET turn-off loss in an off-line manner, and then, calculating the turn-off loss on line according to the loss model. And finally substituting the loss data into the junction temperature prediction model to obtain a junction temperature prediction value. According to the method, the turn-off loss and the junction temperature of the SiC MOSFET under different working conditions can be predicted, and the method has the advantages of being high in real-time performance, easy to implement, high in model precision and the like; and an efficient and accurate solution is provided for thermal evaluation and junction temperature prediction of the silicon carbide power device.

The invention discloses a junction temperature estimation method and device for a power semiconductor and a vehicle, and the method comprises the steps: obtaining the loss, temperature rise data and environment temperature of the power semiconductor in an electric period, the temperature rise data comprises temperature rise values of the temperatures of the power semiconductor under different operation conditions relative to the environment temperature; determining thermal impedance according to the loss and temperature rise data; and determining the junction temperature according to the loss, the thermal impedance and the environment temperature. According to the method, the load rate of the vehicle-mounted software can be reduced, additional hardware does not need to be added, so that test resources are simple, the accuracy is high, the practicability is high, the junction temperature calculation efficiency is improved, and the calculation time is saved.

The invention provides an intelligent calculation method and system for the loss of a semiconductor device, and the method comprises the steps: firstly collecting the operation electrical parameters of the semiconductor device and the temperature parameters of a plurality of temperature measurement points of a surrounding environment in real time, and forming a synchronous operation data set with a timestamp; a parameterized body loss model is established based on a semiconductor physical principle, and a relationship between conduction loss and switching loss along with changes of electrical parameters and junction temperature is described. A parameterized thermal coupling effect model is established according to the physical layout and the heat transfer path of the control cabinet, and a thermal resistance parameter to be identified is used to describe the heat transfer relationship between the device and other heat sources. And identifying and updating model parameters by adopting a parameter identification algorithm and utilizing the synchronous operation data set to obtain a self-adaptive model parameter set reflecting the current working condition and the coupling state. And in combination with the synchronous operation data set and the adaptive model parameter set, a real-time loss value of the semiconductor device is calculated through the body loss model and the thermal coupling effect model, and accurate loss evaluation under the actual working condition is realized.

The invention provides a low-stress double-sided cooling power module and a manufacturing method thereof, the low-stress double-sided cooling power module comprises a first copper-clad ceramic substrate and a second copper-clad ceramic substrate which are oppositely arranged, the first copper-clad ceramic substrate is provided with at least two power chips, and two sides of each power chip are provided with C-shaped auxiliary support column connecting layers; and the lower surface of the second copper-clad ceramic substrate is provided with an inverted metal buffer cushion block which is arranged opposite to each power chip. The inverted metal buffer cushion block comprises a connecting frame with a groove, an auxiliary supporting column connected with the connecting frame is arranged at the position, corresponding to the auxiliary supporting column connecting layer, of the connecting frame, a protruding quadrangular frustum pyramid heat conduction structure is arranged in the groove of the connecting frame, and the bottom of the inverted quadrangular frustum pyramid heat conduction structure is connected with a power chip. The inverted metal cushion block constructs an optimized heat conduction path for the power module, so that heat generated in the working process of the chip can be efficiently conducted to an external heat dissipation environment through the metal cushion block, and the junction temperature of the chip is effectively reduced.

The invention discloses a method and device for estimating the junction temperature of a power device through thermal resistance parameter compensation, and the method comprises the steps: calculating the power loss value of the power device according to the operation condition of an electric vehicle cooling system, inputting the power loss value into a thermal resistance model, and obtaining a power consumption thermal resistance parameter value; cooling liquid flow is obtained, and a thermal resistance parameter compensation value is calibrated according to the cooling liquid flow; performing junction temperature estimation on the power device according to the power consumption thermal resistance parameter value and the thermal resistance parameter compensation value; the invention provides a heat management strategy of a variable cooling condition, and the power consumption of the water pump can be reduced; meanwhile, the current cooling flow can be reversely identified by calculating the loss power and the temperature reported by the NTC / PTC temperature sensor and the like during the operation of the system under the strategy, so that the junction temperature estimation of the power module of the motor controller is compensated, the junction temperature estimation precision is improved, the estimation temperature deviation is reduced, and the reliability of the system is improved. And more reliable temperature protection is provided for a motor controller system.

The invention relates to a chip integrated heat dissipation system and a preparation method thereof, and belongs to the technical field of heat dissipation of semiconductor devices. The chip integrated heat dissipation system comprises a nano-diamond transition layer attached to a chip. A micro-column array supporting layer is arranged on one side, far away from the chip, of the nano-diamond transition layer; the micro-column array supporting layer is in contact with one surface of the diamond film, and the other surface of the diamond film is attached to the three-dimensional micro-channel heat dissipation layer. The invention also provides a preparation method of the chip integrated heat dissipation system. The chip integrated heat dissipation system provided by the invention has the advantage of efficient heat dissipation, and through the combination of the three-dimensional structure and the high heat conduction characteristic of diamond, the heat dissipation power density is remarkably improved, the junction temperature of the chip is reduced, and the heat dissipation requirement of a high-power device is met. The heat dissipation performance reliability is high, the thermal stress is eliminated through the gradient structure design, the interlayer binding force is improved, and the stable performance is still kept after multiple thermal cycles. And the preparation process is good in compatibility and convenient for large-scale production.

The invention provides an intelligent semiconductor chip and a thermal management method thereof, and the method comprises the steps: extracting the gradient features of the interlayer temperature of each semiconductor chip from the temperature information of each barrier layer of a three-dimensional stacked chip in a high-power-consumption module under a current working condition; constructing a temperature coupling field of the high-power-consumption module in the current working condition through each gradient feature and the heat dissipation feature of the packaging layer; a plurality of heat flux concentration areas of the high-power-consumption module in the current working condition are positioned based on the temperature coupling field and the specified sampling frequency, and thermal runaway risk points in the high-power-consumption module are screened out from all the heat flux concentration areas through peak characteristics in junction temperature information of all the heat flux concentration areas; and determining the vector distribution characteristics of the heat flux density in each thermal runaway risk point, and performing layered heat dissipation on the three-dimensional stacked chip in the high-power-consumption module through the vector distribution characteristics of the heat flux density in each thermal runaway risk point. Based on the scheme, thermal field reconstruction of dynamic thermal management in the three-dimensional stacked chip can be realized.

The invention provides an LED lamp adaptive speed regulation heat dissipation method and system based on real-time junction temperature monitoring. The method comprises the following steps: S100, acquiring a PWM signal or an analog signal of an LED driving command signal in real time; s200, on the basis of the change of the driving instruction signal, feedforward prediction is carried out by using a dynamic thermal inertia mapping model, and a feedforward fan control quantity is generated; s300, LED junction temperature is monitored in real time through a forward voltage method, and feedback fan control quantity is generated through a feedback controller according to the deviation between the real-time junction temperature and the target junction temperature; and S400, synthesizing the feedforward control quantity and the feedback control quantity to generate a fan PWM control signal, outputting the fan PWM control signal to a fan driving circuit, and adjusting the rotating speed of the cooling fan. According to the method, driving signals and junction temperature information are processed in parallel, and feedforward and feedback control is combined, so that self-adaptive accurate regulation and control are realized, thermal load change is quickly responded, system lag is effectively inhibited, and LED heat dissipation performance is optimized.

The invention discloses a converter state monitoring method based on IGBT (Insulated Gate Bipolar Translator) loss, which relates to the technical field of power electronics, and comprises the following steps: S1, acquiring direct current side input voltage, direct current side input current, alternating current side output voltage and alternating current side output current of a converter, and calculating IGBT power loss and diode power loss; s2, constructing an IGBT module thermal network model, and calculating IGBT junction temperature and IGBT conduction voltage drop; s3, detecting the state of the IGBT by combining the three-phase current output by the AC side of the IGBT and the parameter value of the IGBT element, and carrying out VSC fault positioning; real-time state monitoring is carried out on the converter based on the change of IGBT power loss, power testing is carried out on the IGBT without damaging packaging and stopping, the aging state of the IGBT is monitored by utilizing electrical parameters before and after current conversion, meanwhile, PQ control is introduced, the stability of output power and current is improved, and the reliability of the converter is improved. And a replacement plan of the aged power module is better arranged before the service life of the IGBT is ended.

Disclosed in the present invention are a resistor-based voltage-withstanding on-state voltage drop measurement circuit for junction temperature monitoring, and a monitoring method. The measurement circuit comprises: a high-resistance series high-voltage resistor RL; switching diodes D1 and D2; a low-voltage MOSFET M1; a phase inverter U1; a three-state gate U2; an RC delay circuit consisting of a resistor R1 and a capacitor C1; current-limiting resistors R2 and R3; auxiliary voltage sources VDD and VCC; an operational amplifier U3; and an isolation operational amplifier U4. The monitoring method comprises: designing an on-state voltage drop sampling circuit based on a high-resistance resistor, and performing parameter selection on the basis of an actual application scenario; measuring a collector current and on-state voltage drop model at different junction temperatures under offline conditions, so as to provide a calculation model for online monitoring; and under online conditions, performing online monitoring of junction temperature on the basis of the model obtained by means of performing testing under the offline conditions. The present invention has the advantages of being low cost, having high reliability, and adaptability to on-state voltage drop measurement at a high voltage and within a wide ambient temperature range.

The invention discloses an intelligent control cooling fan driving method, relates to the technical field of intelligent cooling, and solves the problems that the working mode of a traditional fan is irrelevant to an electric control working state, the fan always runs at the maximum rotating speed after electric control is started, and electric energy is wasted. The cooling fan driving method comprises the steps that the controller conducts power sampling and dynamic calibration on the direct-current side and the alternating-current side of the inverter circuit respectively, and voltage and current are obtained; calculating corresponding power and a power loss value according to the corresponding voltage and current on the two sides, performing temperature compensation on the power loss value according to the junction temperature of the field effect transistor to obtain real-time power loss, and recording loss duration; according to the environment temperature, a loss power threshold value and a loss time threshold value are preset and compared with the real-time power loss and the loss duration time, and meanwhile the real-time power loss and the loss duration time are stored to the controller; and establishing a nonlinear mapping model of the PWM duty ratio and the voltage of the electric control high-power output port, and regulating and controlling the rotating speed of the fan in combination with a multi-stage speed regulation mechanism so as to complete the driving control of the fan.

The invention discloses an information energy equipment operation reliability evaluation method and system and electronic equipment, and relates to the field of power system reliability determination. According to the method, the Foster thermal resistance model is adopted to determine the junction temperature of the selected device in the information energy equipment, so that the average junction temperature and the junction temperature fluctuation are obtained. Adopting a Coffin-Manson-Arrhenius model to determine the number of failure cycles of the selected device based on the average junction temperature and junction temperature fluctuation so as to determine the degree of damage caused by the set number of junction temperature stress cycles; determining the fault rate of the selected device based on the damage degree, and obtaining the fault rate of the H bridge + DAB combination unit; the fault rate of the half-bridge arm can be obtained on the basis of the fault rate of the H-bridge + DAB combination unit, and the fault rate of the rectification subsystem can be accurately obtained under the condition of considering the bridge arm inductance fault rate of the half-bridge arm, so that the reliability of the digital battery energy storage system can be simply and effectively analyzed.

The invention relates to the technical field of reactive power compensation of a power system, and discloses an active filter harmonic suppression and dynamic compensation system based on IGBT (Insulated Gate Bipolar Translator) multi-mode regulation and control. The system comprises a control module; the high-frequency harmonic detection module is electrically connected with the control module and is configured to detect a power grid harmonic signal in real time at a sampling rate of 200kHz and transmit the power grid harmonic signal to the control module; the IGBT gate driving compensation circuit is electrically connected with the control module and a preset IGBT module, and the control module dynamically adjusts the dead time and the switching frequency of the IGBT module through the IGBT gate driving compensation circuit; the IGBT junction temperature observer is electrically connected with the IGBT module and the control module and is configured to monitor the junction temperature of the IGBT module in real time and trigger the control module to start a derating protection mechanism when the junction temperature exceeds 125 DEG C; wherein the control module generates a PWM (Pulse Width Modulation) compensation waveform through a model prediction control algorithm unit based on a detection signal of the high-frequency harmonic detection module, so as to drive the IGBT module to execute harmonic compensation through the IGBT gate driving compensation circuit.