432 results about "Wide-bandgap semiconductor" patented technology

Power switch device includes a wide-bandgap semiconductor switch, and a gate driver. The gate driver includes a driver circuit and a diagnostic circuit. The driver circuit is configured to provide a driver signal to control the wide-bandgap semiconductor switch. The diagnostic circuit is configured to sense an electrical characteristic of the wide-bandgap semiconductor switch, and perform a diagnostic test for the wide-bandgap semiconductor switch in response to the electrical characteristic of the wide-bandgap semiconductor switch.

The invention provides a wide bandgap semiconductor heteroepitaxial layer growth process parameter adjustment method and system, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining substrate parameters, constructing a digital twin model, predicting an initial strain evolution trend, and determining an optimal initial process parameter; acquiring multi-source data through an in-situ ellipsometer, a reflective high-energy electron diffraction sensor and an acoustic emission sensor in the growth process, and calculating a strain tensor field and defect density distribution by adopting a deep neural network; layered progressive process parameter optimization is executed; and adjusting the growth process according to an optimization result. According to the method, accurate regulation and control of process parameters can be realized, the defect density is reduced, and the quality of the wide bandgap semiconductor heteroepitaxial layer is improved.

The invention relates to a heterojunction composite material and a preparation method and application thereof, and belongs to the technical field of catalysts. The preparation method of the heterojunction composite material comprises the following steps: dispersing nano cadmium sulfide in water to obtain a nano cadmium sulfide dispersion liquid, then adding a triazinyl covalent organic framework, fully reacting at 75-85 DEG C, centrifuging, precipitating, washing and drying to obtain the heterojunction composite material. The narrow-band-gap semiconductor cadmium sulfide and the wide-band-gap semiconductor triazinyl covalent organic framework are compounded to form the heterojunction structure composite material photocatalyst, and the narrow-band-gap semiconductor cadmium sulfide and the wide-band-gap semiconductor triazinyl covalent organic framework interact with each other, so that the response range of sunlight is widened, separation and transfer of photo-induced electrons and holes are promoted, and the photoelectric conversion efficiency is improved. Therefore, the photocatalytic oxidation-reduction capacity of the catalyst is improved, and the photocatalytic performance of the catalyst is finally improved. The heterojunction composite material can be applied to the field of cleaning and environmental protection as a photocatalyst, and has excellent hydrogen production efficiency.

The utility model discloses an electric tool and walking equipment, and the electric tool comprises a working part which is configured to have a maximum output rotating speed, and a motor which is configured to have a maximum rotating speed; the transmission assembly is configured with a transmission ratio; the driving circuit comprises one or more driving switches; a controller for outputting a control signal to control one or more drive switches of the drive circuit; wherein at least one driving switch in the driving circuit comprises a wide bandgap semiconductor switch, and the ratio of the required maximum rotating speed of the motor to the maximum rotating speed of the motor is smaller than or equal to 0.9. The electrical performance of the motor system of the electric tool is good.

A gate driver has a turn-on circuit and a turn-off circuit. The turn-on circuit pulls up a gate terminal of a wide bandgap (WBG) semiconductor transistor and turns on the WBG semiconductor transistor in response to a first status of an on-off control signal. The turn-off circuit pulls down the gate terminal of the WBG semiconductor transistor and turns off the WBG semiconductor transistor in response to a second status of the on-off control signal. When the on-off control signal transits to the first status, the turn-on circuit drives the gate terminal of the WBG semiconductor transistor at a first constant driving current, and later switches to a second constant driving current. The second constant driving current is lower than the first constant driving current.

The invention provides an integrated gallium nitride and gallium oxide power chip, a preparation method thereof and electronic equipment, and relates to the technical field of semiconductors. According to the epitaxial structure in the integrated gallium nitride and gallium oxide power chip, a GaN layer and a Ga2O3 layer are integrated and epitaxially arranged on the same substrate, heteroepitaxial lattice mismatch is reduced by adopting a method of epitaxially extending the Ga2O3 layer on the GaN layer, and the crystal quality is improved. According to the epitaxial structure, a first functional component is formed on the first area, a second functional component is formed on the second area, the surface of the first area is the surface of the side, deviating from the substrate, of the barrier layer, the surface of the second area is the surface of the side, deviating from the substrate, of the Ga2O3 layer, and the aim that a Ga2O3 power chip and a GaN power chip are integrally arranged on the same substrate is achieved. The processes of lead interconnection, bonding and the like are reduced, the size of a wide bandgap semiconductor power system can be further reduced, and the problems of parasitic loss, response delay, noise and the like caused when discrete chips are integrated are avoided.

Wide bandgap trench gate semiconductor devices are provided. In one example, a semiconductor device includes a wide bandgap semiconductor structure. The wide bandgap semiconductor structure includes a drift region of a first conductivity type and a well region of a second conductivity type. The semiconductor device includes a gate trench in the wide bandgap semiconductor structure. The gate trench extends through the well region into the drift region. The semiconductor device includes a buried gate structure in the gate trench. The buried gate structure includes a gate polysilicon layer and a gate silicide layer.

The invention relates to the field of semiconductors, and discloses a wide bandgap semiconductor cellular structure and a semiconductor device.The wide bandgap semiconductor cellular structure comprises a substrate, an epitaxial layer and a hole injection layer; the epitaxial layer comprises a heterojunction structure, a hole collection layer and a hole barrier layer which are stacked in the first direction; the hole injection layer is stacked on the epitaxial layer; the source electrode is arranged on the side, back to the substrate, of the heterojunction structure, and the substrate is arranged in a floating mode; the drain electrode is arranged on the side, back to the substrate, of the heterojunction structure. In order to solve the problems of low breakdown voltage and poor stability of a cellular structure in the prior art, a leakage current path between a drain electrode and a source electrode is prolonged in the cellular structure through floating arrangement of a substrate, so that the breakdown voltage of a semiconductor device is reduced; and through the combined action of the hole injection layer, the hole collection layer and the hole blocking layer, holes are accumulated in the hole collection layer, accumulated negative charges are shielded, the substrate effect is inhibited, and the stability of the cellular structure is improved.

The invention discloses a simulation analysis method for single-particle electric leakage of a wide bandgap semiconductor device, and the method comprises the steps: constructing a geometric model of a to-be-simulated power device, calculating the vacancy defect density of the power device, carrying out the two-dimensional modeling and grid division, building an electrical model of the power device, and fitting an electrical curve of the power device; then, a collision ionization model after high-energy particle incidence is introduced, mobility and electric leakage degradation parameters are optimized, and an electric leakage degradation model corresponding to the power device is established; and finally, carrying out damage mechanism analysis, extracting the change of microscopic physical parameters of the power device along with time by changing influence parameters in the radiation process, and carrying out reinforcement and optimization on the power device. According to the method, the physical processes of different particle radiation devices can be accurately simulated, different microscopic physical parameters in the electric leakage process of the wide bandgap semiconductor device are extracted, and a technical basis is provided for radiation effect mechanism analysis and reliability evaluation of the wide bandgap semiconductor device by establishing different electric leakage models.

Semiconductor device packages are provided. In one example, the semiconductor device package includes a semiconductor die. The semiconductor die includes a wide bandgap semiconductor material. The semiconductor die includes a metallization layer on a surface of the semiconductor die. The semiconductor device package includes a submount. The metallization of the semiconductor die is directly bonded to the submount.

The invention provides a wide bandgap semiconductor trench gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure and a manufacturing method thereof. In the structure, an N + current expansion layer is positioned in an upper region of an N-epitaxial layer; the P-well region is located on the N + current expansion layer, and the source N + region is located on the P-well region; the plurality of trench gate electrodes are arranged at intervals along the horizontal direction, and a first source P + region is arranged between every two adjacent trench gate electrodes in the middle region; the trench gate electrode penetrates through the source N + region, the P-well region and the N + current expansion layer in the longitudinal direction and extends into the N-epitaxial layer; a second source P + region is arranged at the bottom of the trench gate electrode; the P-type connection region is connected with the plurality of second source P + regions in the second direction; an interlayer dielectric layer is arranged above the trench gate electrode; the N + contact region is arranged at the first source P + region in an extending mode in the first direction, and the Schottky contact region is located above the N + contact region. The structure can improve the current density of the device, improves the conduction characteristic of the device, can also form a net-shaped P-type region protection gate electrode, and improves the dynamic reliability of the gate electrode of the device.

Interconnect structures for power semiconductor device packages are provided. In one example, a power semiconductor device package may include one or more semiconductor die, a submount, and at least one interconnect structure. The one or more wide bandgap semiconductor die may be on the submount. The at least one interconnect structure may include at least one texturized surface.

A power semiconductor device includes a semiconductor layer structure comprising a wide bandgap semiconductor material. The semiconductor layer structure includes a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region. The fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region. Related devices and methods are also discussed.

To provide a semiconductor device capable of achieving reduction in recovery loss.SOLUTION: A vertical semiconductor device comprising a wide gap semiconductor includes an n-type first layer. The semiconductor device includes an n-type second layer that is in contact with an upper surface of the first layer, the second layer having an n-type impurity concentration lower than that of the first layer. The semiconductor device includes a p-type body layer in contact with an upper surface of the second layer. The semiconductor device includes an n-type source region disposed on an upper part of the body layer. The semiconductor device includes a gate electrode structure disposed in contact with the body layer. A p-type first specific region is disposed in the first layer. The first specific region is disposed in a part of the first layer as viewed in a direction vertical to the upper surface of the first layer.SELECTED DRAWING: Figure 1

A power tool including a motor, a power source interface configured to connect to a power source, and a printed circuit board (“PCB”) electrically connected to the motor and the power source interface. The PCB includes a three-level or greater inverter configured for controlling power supplied by the power source to the motor.

A power conversion system is provided, which system includes a first power converter including power electronic switches of a first type that are switchable to provide electric power conversion; and a second power converter connected in parallel to the first power converter. The second power converter includes power electronic switches of a second type that are switchable to provide electric power conversion. The second type is different from the first type. The second type of power electronic switches includes wide bandgap semiconductor switches. The system further includes a controller configured to operate the power conversion system in a first operating mode in which the second power converter is operated at a first switching frequency, and in a second operating mode in which the second power converter is operated at a second switching frequency of the power electronic switches and the first power converter is operated to provide power conversion.

According to the field effect transistor, a first JFET is formed in a first epitaxial layer, and a second MOSFET is formed in a second epitaxial layer. The forbidden band width of the material of the first epitaxial layer is greater than that of the material of the second epitaxial layer; the second epitaxial layer is formed on the top surface of the first epitaxial layer, and the contact surface of the first epitaxial layer and the second epitaxial layer is heterojunction; a first source region of the first JFET and a second drain region of the second MOSFET are connected through a first floating metal contact hole penetrating through the heterojunction. A first gate region of the first JFET is connected to a source consisting of a front metal layer through a deep contact hole penetrating through the heterojunction; the second source region is connected with the source electrode. The back face of the first drain region is connected to a drain electrode composed of a back face metal layer. The invention further discloses a manufacturing method of the field effect transistor. The invention has the advantages of a wide bandgap semiconductor material device, and can overcome the problems of high channel carrier mobility, high driving voltage and poor reliability of the gate dielectric layer of the wide bandgap semiconductor material device.

A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type, and first and second contacts on the semiconductor layer structure. The drift region comprises a wide bandgap semiconductor material, and is configured to provide unipolar conduction between the first and second contacts below a current density threshold, and bipolar conduction between the first and second contacts above the current density threshold. Related devices and fabrication methods are also discussed.

Systems and methods for laser-based surface processing operations on a wide bandgap semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes providing a semiconductor workpiece having a surface, the semiconductor workpiece including silicon carbide. The method includes providing a filler material on at least a portion of the surface. The method includes, subsequent to providing the filler material, performing a surface processing operation on the surface.

A trench gate power MOSFET, including: a substrate provided with a hexagonal wide bandgap semiconductor of a first conductivity type; an epitaxial layer grown on the substrate and of the first conductivity type; a body region formed on the epitaxial layer and of a second conductivity type; a trench formed in the body region by etching, where a length direction of the trench is parallel to a projection, on the surface of a wafer, of the C axis; a second conductivity-type pillar formed by implanting first ions into a bottom region of the trench along the C axis of the hexagonal wide bandgap semiconductor material, where the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is at least not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate formed by filling the trench with a filler.

Systems and methods for laser-based surface processing operations on a wide bandgap semiconductor wafer, such as a silicon carbide semiconductor wafer, are provided. In one example, a method includes removing a wide bandgap semiconductor wafer from a boule using a removal process. The method includes ablating, with one or more lasers, an exposed surface resulting from the removal process to remove material from the exposed surface, wherein ablating, with one or more lasers, the exposed surface reduces a thickness of semiconductor material (e.g., by about 25 microns or greater).

A power tool includes a working component configured with the maximum output rotational speed; an electric motor configured with the maximum rotational speed; a transmission assembly configured with a transmission ratio; a driver circuit including one or more drive switches; and a controller for outputting a control signal to control the one or more drive switches of the driver circuit. At least one drive switch in the driver circuit includes a wide bandgap semiconductor switch, and the ratio of the required maximum rotational speed of the electric motor to the maximum rotational speed of the electric motor is less than or equal to 0.9. The electric motor system of the power tool has good electrical performance.

The invention provides a wide bandgap semiconductor composite chip structure and a preparation method thereof, and belongs to the technical field of semiconductor devices. According to the composite chip structure, a wide bandgap semiconductor voltage withstanding unit with a wide bandgap semiconductor material as a main body and a switch control unit manufactured on a traditional semiconductor material are vertically integrated through a conductive plug, so that the composite chip structure has the voltage withstanding performance of the wide bandgap semiconductor material; and various problems during the manufacturing of the wide bandgap semiconductor material switch control device are avoided, and the problems of heterogeneous material interface defects and interface potential barriers in the existing integration technology are also avoided. The composite chip structure has a smaller chip area and better electrical properties.

A thin and light optical waveguide lens, which can be applied to a display device. The optical waveguide lens comprises waveguide plates (1) made of a wide bandgap semiconductor material and protective films (2) made of an optical resin material; at least one surface of the waveguide plates (1) is provided with a grating structure (11); the protective films (2) are arranged on the surfaces of the waveguide plates (1), and are embedded in grating gaps of the grating structure (11); and the outer side surfaces of the corresponding protective film (2) and the grating structure (11) are approximately located on the same plane, and / or said protective film (2) covers the outer side surface of the grating structure (11). According to the optical waveguide lens, high-refractive-index glass waveguide plates (1) having a refractive index of 1.7-1.9 are replaced with the waveguide plates (1) made of the wide bandgap semiconductor material, and cover glass is replaced with the protective films (2) made of the optical resin material, such that hardening, scratch resistance, anti-fog, anti-slip, anti-smudge, high light transmittance and other functions are integrated while the waveguide plates (1) are protected on both sides, the overall thickness of the optical waveguide lens is reduced and the optical properties are improved.

An example method includes providing a wide bandgap semiconductor workpiece. The example method includes exposing the wide bandgap semiconductor workpiece to one or more electrical discharges from an electrical discharge machining (EDM) system to reduce a surface roughness of the wide bandgap semiconductor workpiece. Exposing the wide bandgap semiconductor workpiece to the one or more electrical discharges may include submerging a surface of the wide bandgap semiconductor workpiece in a dielectric fluid; positioning an electrode head relative to the surface such that a gap is defined between an end of the electrode head and the surface; and generating an electrical discharge across the gap to create a plasma zone within the gap such that a material is removed from the surface.

The invention discloses a heterojunction composite material and a preparation method and application thereof, and belongs to the technical field of catalysts, and the preparation method comprises the following steps: dispersing LaFeO3 and g-C3N4 in water, adding CuCl2, uniformly stirring, adding a sodium citrate aqueous solution, continuously stirring for 12-24 hours, centrifuging, washing and drying to obtain the heterojunction composite material; the mass ratio of the LaFeO3 to the g-C3N4 to the CuCl2 is (10 to 30) to (70 to 90) to (10 to 30). According to the invention, two narrow-band gap semiconductors (LaFeO3 and Cu2O) and a wide-band gap semiconductor (g-C3N4) are compounded to form the composite material with the double-heterojunction structure. As a photocatalyst, the material can be effectively applied to pollution control, and has excellent capabilities of removing organic water pollutants and air pollutants and sterilizing.

The invention provides a wide bandgap semiconductor trench IGBT device structure and a manufacturing method thereof, and belongs to the technical field of semiconductor devices. The IGBT device comprises a collector electrode, a collector region, a buffer layer, an epitaxial layer and an emitter electrode located on the epitaxial layer, wherein the collector electrode, the collector region, the buffer layer and the epitaxial layer are stacked in sequence. A buried layer and a well region are arranged in the epitaxial layer; and at least one trench gate structure penetrating through the well region is also arranged. The bottom of the trench gate structure is provided with a second doped region in direct contact with the trench gate structure, and the top of the trench gate structure is covered with an interlayer dielectric layer. The two sides of the trench gate structure are provided with emitter trenches surrounded by the first doped region. The first doped region is in direct contact with the buried layer. An emitter dielectric layer is deposited along the wall of the emitter trench, and the emitter dielectric layer is filled with a semiconductor material. A conductive layer is disposed in a portion of the buried layer below the trench gate structure. The collector region, the buried layer, the well region, the first doped region and the second doped region have the same doping type, and are different from the buffer layer, the epitaxial layer and the conductive layer in doping type.

Power converting devices (100) for power tools. One embodiment provides a power converter device (100) including a power source (200), a power converter (210) coupled to the power source (200), and an electronic processor (220) coupled to the power converter (210) to control the operation of the power converter (210). The power converter (210) is configured to receive an input power in one form or at a first voltage from the power source and convert the input power to an output power in another form or at a second voltage. The power converter (210) includes at least one wide bandgap field effect transistor controlled by the electronic processor (220) to convert the input power to output power.

A power supply system including a housing, an internal non-removable battery, an output, a power converter, and an electronic processor. The internal non-removable battery received in the housing and having a nominal voltage of at least 12 Volts. The output provided on the housing. The power converter coupled between the internal non-removable battery and the output. The power converter including a first switch. The power converter also converts power received from the internal non-removable battery. The electronic processor coupled to the power converter and controls operation of the power converter by controlling the first switch at a switching frequency of at least 100 kHz.

The invention belongs to the field of high-power electric vacuum devices, relates to heat transport performance of an interface ceramic material in a high-power electric vacuum device, and particularly provides a deep learning potential-based wide bandgap semiconductor heat transport performance calculation method, which is used for solving various problems of existing methods. According to the method, firstly, the deep learning potential is constructed by adopting a first principle, then the deep learning potential is used as an empirical potential function, and the heat transport performance of the wide bandgap semiconductor is calculated through a molecular dynamics method, so that large-scale molecular dynamics simulation is realized, and a temperature conduction process and a heat transfer process of a long-time dimension can be accurately predicted; errors caused by empirical potential simulation calculation are avoided, and the time and operation cost of first principle calculation are greatly reduced.