30 results about "Wide-bandgap semiconductor" patented technology

A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.

The present disclosure relates to a 2T memory cell, and more particularly to a technology including a first transistor that performs data write and erase operations and a second transistor that performs a data read operation. The first transistor is formed vertically above the second transistor, and the first drain of the first transistor serves as the second gate of the second transistor. The channel of the first transistor has a longer effective channel length than the channel of the second transistor. High-density integration is possible by forming the first transistor through a self-aligned process, and data retention characteristics are improved by forming the channel of the first transistor with a semiconductor material having a wide bandgap such as polysilicon or IGZO. The 2T memory cell according to the present disclosure can simultaneously achieve high-speed operation and high integration density.

Method for forming a wide bandgap semiconductor device (100), the method comprising: forming a mask pattern for a columnar region (116) over the first surface (1041) of the wide bandgap semiconductor body (104), the mask pattern having an opening that exposes part of a transistor cell area (TCA) of the wide bandgap semiconductor body (104); and forming the columnar region (116), comprising introducing dopants of the first conductivity type through the opening on the first surface (1041) into the transistor cell area (TCA) of the wide bandgap semiconductor body (104) by ion implantation;and then forming a trench-gate mask pattern (120) over a first surface (1041) of a wide-bandgap semiconductor body (104), wherein the trench-gate mask pattern (120) has an opening that exposes the trench-gate region of the transistor cell area (TCA) of the wide-bandgap semiconductor body (104); and etching a trench (102) into the wide-bandgap semiconductor body (104) over the opening in the trench-gate mask pattern (120), wherein the trench (102) extends deeper into the semiconductor body than the columnar region (116);Forming a shielding region (106), comprising introducing dopants of a first conductivity type into the wide bandgap semiconductor body (104) through a bottom and / or a side wall of the trench (102) by ion implantation, wherein the mask pattern (120) for a trench-gate region serves as an ion implantation mask for forming the shielding region (106) and subsequently expanding the trench (102), comprising an expansion process to form a sacrificial oxide (122) lining the side walls and a bottom of the trench (102) by thermal oxidation and removal of the sacrificial oxide (122).

The application discloses a wide-bandgap semiconductor module packaging structure based on a planar interconnection, which is electrically connected between wide-bandgap semiconductor chips in the same group in a planar interconnection structure mode and finally connected with a power substrate bottom metal layer, without using a bonding wire, so that the inductance is reduced, the parasitic inductance from the chip to the terminal is greatly balanced through the interconnection mode, and the current sharing capacity of the module is greatly improved; in addition, the metal layer of the power substrate, the power terminal driving terminal and the surface of the planar interconnection structure are all plated with silver, so that the anti-oxidation capacity of the metal in the module under high temperature can be effectively improved, the nano-silver sintering technology is more easily used in the silver-plated surface mode, and the high-temperature resistance of the module is further improved; the wide-bandgap semiconductor module packaging structure has the characteristics of high-temperature resistance, low parasitic inductance and low parasitic inductance imbalance, and is particularly suitable for current sharing of multi-chip in a half-bridge structure, high switching frequency and high working temperature.

The present application relates to a kind of hydrogen terminal diamond / gallium oxide hetero integrated complementary devices and preparation method, CMOS inverter includes: diamond substrate layer, gallium oxide substrate layer, first source electrode, first drain electrode, first dielectric layer, first gate electrode, hydrogen terminal surface layer, second source electrode, second drain electrode, second dielectric layer and second gate electrode.The present application embodiment combines hydrogen terminal diamond PMOS and gallium oxide NMOS together by the method of hetero integration to prepare ultra-wide bandgap semiconductor CMOS device, effectively solves the key problem that diamond is difficult to realize n-type doping, gallium oxide is difficult to realize p-type doping, ensures the high performance of each device and overall high quality, realizes the high-performance ultra-wide bandgap semiconductor CMOS inverter suitable for ultra-high temperature, strong radiation environment application.

A microelectronic device includes a hybrid component. The microelectronic device has a substrate including silicon semiconductor material. The hybrid component includes a silicon portion in the silicon, and a wide bandgap (WBG) structure on the silicon. The WBG structure includes a WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon. The hybrid component has a first current terminal on the silicon, and a second current terminal on the WBG structure. The microelectronic device may be formed by forming the silicon portion of the hybrid component in the silicon, and subsequently forming the WBG structure in a silicon recess on the silicon.

A nuclear voltaic power source comprising a plurality of spherical nuclear voltaic cells arranged in disk-shaped slices stacked within cylindrical battery form factor assemblies. Each spherical cell contains at least one radioisotope, at least one converting medium (solid wide bandgap semiconductors or liquid transducers including liquid semiconductors, liquid scintillators, liquid metals, and ionic liquids), electrical contacts, and an encapsulating layer. The spherical geometry maximizes radiation solid angle capture. Multiple cells are arranged in planar disk-shaped slices connected in series or parallel, and multiple slices are stacked into cylindrical assemblies conforming to industry-standard formats including 2170, 18650, 21700, 4680, and 26650. A cylindrical external casing provides radiation shielding and standard battery terminal interfaces. The modular architecture enables customizable voltage, current, and energy capacity and direct drop-in compatibility with existing lithium-ion battery infrastructure including battery management systems and electric vehicle battery packs.

A nuclear voltaic power source utilizing liquid-state transducer media in combination with radioisotopes to convert nuclear radiation energy into electrical power. The system accommodates four types of liquid transducers: liquid semiconductors (e.g., selenium-iodide) that generate electron-hole pairs; liquid scintillators (e.g., liquid xenon) that convert radiation into photons subsequently absorbed by wide bandgap semiconductors; liquid metals (e.g., gallium) that produce free electrons through ionization; and ionic liquids that generate free ions under radiation exposure. An adaptive transducer contact interface (ATCI) adapts its charge extraction function to match the specific energy conversion mechanism of the selected transducer, functioning as an ohmic / Schottky contact, a wide bandgap semiconductor photon converter, or an electrolytic contact as appropriate. The modular architecture enables optimization for diverse applications while leveraging the inherent radiation resistance and self-healing properties of liquid transducers.

An optical microscope contains a light source that emits coherent laser light with a wavelength of less than 550 nm; an optical system; and an electronic module. The microscope generates two copies of the laser light, modulates the phase or amplitude of the first copy relative to the second copy, and recombines the first and second copies to form an excitation beam. The microscope focuses the excitation beam onto a position on a material and measures a response beam from the material using an optical detector. The response beam contains transmitted and reflected light from the material. The microscope extracts a response signal from the response beam, which represents a nonlinear optical response of the material and indicates a property of the material. The optical detector is a semiconductor photodiode. The type of semiconductor photodiode is selected based on the photon energy of the laser beam.

This invention relates to the field of semiconductor testing technology, and more particularly to a method and system for advanced process and wide bandgap semiconductor probe testing. The method includes: acquiring a wafer, a chip under test (DUT), solder pads, a pin piercing area, a probe card, multiple probes, an external probe, and a vacuum tray; forming an alignment result through an optical calibration system and multi-directional movement processing; performing pin pressure testing, contact resistance testing, and visual inspection on the external probes and pin piercing area based on the alignment result to form a first measurement result; further processing the multiple probes and solder pads to form a second measurement result; comparing the first and second measurement results to generate a measurement trigger signal, and completing the measurement action processing accordingly to obtain the final measurement result. This invention achieves pre-determination of measurement actions, enhances the correspondence between contact state and measurement results, and improves the stability and consistency of advanced process and wide bandgap semiconductor probe testing.

This invention discloses an integrated aviation power energy management controller and control method, comprising: a single modular housing; a battery management module, a power conversion module, a power distribution and protection module, and a microcontroller; wherein the battery management module, power conversion module, and power distribution and protection module are all integrated within the single modular housing; wherein the power conversion module is a bidirectional DC / DC converter using wide bandgap semiconductor devices; the power distribution and protection module includes a solid-state circuit breaker; the battery management module includes a multi-channel battery status monitoring circuit and an isolated current acquisition unit with redundant design; thereby achieving high physical integration of the aircraft while possessing aviation-grade functional safety, highly reliable redundant sensing, and efficient bidirectional energy management capabilities.

A wide band-gap semiconductor layer structure is provided that comprises a drift region having a first conductivity type and a plurality of source regions having the first conductivity type on the drift region. A plurality of trenches are provided in an upper surface of the wide band-gap semiconductor layer structure. Second conductivity type dopants are implanted into the wide band-gap semiconductor layer structure to simultaneously form well regions underneath the source regions and trench shielding regions underneath the trenches, the well regions and the trench shielding regions each having a second conductivity type.

This application discloses a method and system for deep ultraviolet fluorescence spectroscopy testing of wide bandgap semiconductors, relating to the field of semiconductor material detection technology. The method includes: acquiring a wide bandgap semiconductor sample; emitting deep ultraviolet excitation light from a deep ultraviolet light source onto the wide bandgap semiconductor sample to excite electron-hole pairs, which recombine to generate a fluorescence signal; wherein the photon energy of the deep ultraviolet excitation light is greater than the bandgap of the wide bandgap semiconductor sample; detecting the fluorescence signal and performing spectral analysis on the detected fluorescence signal to obtain electronic energy level structure information related to defects and impurities in the wide bandgap semiconductor sample. This application utilizes the characteristic that the photon energy of the deep ultraviolet excitation light is greater than the bandgap of the wide bandgap semiconductor sample to achieve efficient excitation of intrinsic and defect states.

The utility model discloses a kind of line controller device and frequency conversion air conditioning system of integrated drive board, comprising: shell, its inside integrated communication connection drive board and line controller mainboard, and drive board and line controller mainboard interval arrangement and form electrical gap;Power device on drive board is made of wide bandgap semiconductor material, so that the junction temperature rise amplitude of the power device under rated working current is lower than silicon-based power device;The sidewall of the shell is provided with heat dissipation through-hole, for emitting the heat generated by the power device.The utility model by drive board is integrated in the shell of line controller device, then the power device on drive board is made of wide bandgap semiconductor material, heat reduction, without additional radiator, but through heat dissipation through-hole realizes heat dissipation, to reduce the occupied volume of drive board, realize drive board miniaturization, to optimize space layout, improve space utilization, to realize the miniaturization of line controller device, reduce production cost.

The present application provides a wide bandgap semiconductor bipolar charge trapping (BCT) non-volatile memory structure with only one single insulating layer and a method of fabricating the same. The present application also provides a monolithic integrated enhancement-mode (E-mode) n-channel and p-channel field effect transistors (n-FET and p-EFT) for gallium nitride (GaN) based complementary logic (CL) gates based on the proposed memory structure, a method of fabricating the field effect transistors in a single process run, and various logic circuits incorporating one or more of the GaN based CL gates.

This invention discloses an implantable medical device comprising a polyethylene glycol diacrylate hydrogel matrix and monodisperse guanine peptide nucleic acid self-assembled microspheres immobilized within the polyethylene glycol diacrylate hydrogel matrix. The guanine peptide nucleic acid self-assembled microspheres exhibit a spatial quasi-periodic distribution within the hydrogel matrix characterized by short-range order and long-range disorder. This implantable medical device combines the light-harvesting advantages of biomimetic structures, the wide bandgap photoelectric properties of bio-organic semiconductors, and the flexible tissue integration capabilities of hydrogels to obtain an amorphous photonic crystal material with programmable optical properties and wide bandgap semiconductor properties. This product aims to achieve efficient, stable, and biosafe neurophotomodulation and, through mechanisms such as enhancing cortical gamma oscillations, effectively activating disease-related microglia in the hippocampus, and promoting the clearance of β-amyloid plaques, provides a novel, non-genetic, implantable optical therapy strategy for neurodegenerative diseases.

To provide a continuous wave semiconductor laser crystallization method for a wide bandgap semiconductor film having a bandgap energy of 2.8 eV or more, and improving the mobility of the film by growing a single crystal band.SOLUTION: A method for crystallizing a film and a method for manufacturing the crystallized film includes a step of irradiating an indium oxide wide bandgap semiconductor film with a semiconductor laser whose absorption coefficient of the wide bandgap semiconductor film is 3000 cm-1 to 50000 cm-1 using a microchelobron laser beam scanning method.SELECTED DRAWING: Figure 4

To reduce fluctuations in gate-source voltage. [Solution] The power module 1 comprises a plurality of first chips, each having a plurality of transistor cells on the front side of a wide-bandgap semiconductor layer having a front and a back surface, which perform switching operations between a first electrode and a second electrode according to the control of a control electrode; a plurality of second chips, each having a cathode connected to the first electrode and an anode connected to the second electrode; a diode provided as a parasitic element of each transistor cell contained in the plurality of transistor cells, each having a cathode connected to the first electrode and an anode connected to the second electrode; a substrate on which the plurality of first chips and the plurality of second chips are mounted; and a sealing resin that seals at least a portion of the substrate, the plurality of first chips, and the plurality of second chips. The forward threshold voltage of each of the plurality of second chips is lower than the forward threshold voltage of the diode.

A power semiconductor device includes a semiconductor layer structure comprising a wide bandgap semiconductor material. The semiconductor layer structure includes a drift region of a first conductivity type, a source region of the first conductivity type, and a well contact region of a second conductivity type adjacent the source region. A first ohmic contact comprising a first conductive material is formed on the source region. A second ohmic contact comprising a second conductive material, which is different than the first conductive material, is formed on the well contact region. A gate structure is formed on the drift region and includes a gate contact comprising a third conductive material, which is different than the first and second conductive material. Related devices and fabrication methods are also discussed.

This application relates to the field of thermal management technology for wide bandgap semiconductor devices, and discloses a heat dissipation structure for GaN power devices and its fabrication method. The heat dissipation structure comprises gradient array thermal conductive units corresponding to the hot spot projection region of the gate-drain access region on the back side and / or inside the substrate. Each thermal conductive unit includes a high thermal conductivity metal core and a continuous, dense insulating shell covering its outer side, forming a core-shell composite structure to balance high thermal conductivity and electrical isolation performance. The gradient array has a higher density, larger size, and / or deeper thermal conductive path in the hot spot region, and a reduced density or size in non-hot spot regions. The heat dissipation structure also includes an intermediate heat diffusion layer disposed on the back side of the substrate and a substrate-side enhanced thermal conductivity layer located below it to form a multi-level coupled heat dissipation path. The fabrication method includes substrate thinning, hole array etching, insulating layer deposition, metal filling and planarization, and bonding steps between the heat diffusion layer and the substrate.

To provide a composite semiconductor device capable of reducing parasitic inductance. [Solution] A composite semiconductor device 100 comprises a first switching element 200 and a second switching element 300 with lower breakdown voltage, wherein the source electrode of the first switching element and the drain electrode of the second switching element are electrically connected. The first switching element includes a drain electrode 10, a source electrode 8, and a gate electrode 7 connected to the upper surface of a wide bandgap semiconductor and arranged extending in the D1 direction in a plan view. Each electrode has multiple active portions 201 arranged side by side in the D2 direction intersecting the D1 direction, an insulating film 203 arranged on the upper surface of the wide bandgap semiconductor outside the active portions so as to sandwich the active portions in the D1 direction in a plan view, a drain pad electrode 210 connected to the drain electrode, and a source wiring 208 which also serves as a source pad electrode connecting adjacent source electrodes. The second switching element is installed on top of the first switching element.

This invention proposes a monolithically integrated microwave radiation system based on an optically triggered switch and its fabrication method, belonging to the field of high-power microwave technology. The system includes a driver wafer and a device wafer bonded together. The device wafer uses cubic boron nitride or hexagonal boron nitride as a substrate, on which a heterojunction optically triggered switch, a monolithic microwave integrated circuit, and a monitoring and protection module are integrated. The optically triggered switch is vertically integrated on the side of the monolithic microwave integrated circuit. Under the excitation of the optical pulse output from the driver wafer, it generates an electrical trigger signal, which is amplified by the monolithic microwave integrated circuit and outputs a microwave signal. This invention, through the synergistic design of an ultra-wide bandgap semiconductor substrate, a two-dimensional material heterojunction, three-dimensional integration technology, and full-dimensional on-chip monitoring, achieves chip integration from optical triggering, microwave amplification to intelligent protection on a nitride-based substrate, significantly improving power density, response speed, operating frequency, and reliability.

This invention relates to the field of wide bandgap semiconductor nanostructure fabrication technology, specifically an electrochemical etching method for silicon carbide nanowires. The method comprises: S1, selecting a 4H-SiC wafer, cleaning and drying it to obtain a pretreated 4H-SiC wafer; S2, using the pretreated 4H-SiC wafer as the anode and a platinum sheet as the cathode, immersing them in a mixed etching solution of HF / H2O2 / (CH2OH)2 with a fixed spacing; S3, applying an oscillating current with a period of 60s to the electrochemical etching system, adjusting the current amplitude according to the etching stage, and completing the etching under isothermal conditions; wherein, the current amplitude during the nanowire backbone formation stage is 0.4-0.5 mA / cm², and the current amplitude during the protrusion structure induction stage increases to 0.6-0.7 mA / cm². 2 During the protruding structure forming stage, the current amplitude increases to 0.9-1.0 mA / cm. 2 During the surface finishing stage, the current amplitude is reduced to 0.8-0.9 mA / cm². S4: The etched 4H-SiC wafer is removed, ultrasonically cleaned, and dried to obtain bamboo-like silicon carbide nanowires. This solves the problems of large lattice damage, poor morphology controllability, and insufficient anisotropy in existing silicon carbide nanowire etching processes.

A wide bandgap semiconductor device includes gate fingers between bonding pads. A semiconductor device includes a semiconductor body made of a wide bandgap semiconductor material. A plurality of first bonding regions are connected to a first load terminal of the semiconductor device. First gate fingers are arranged between the first bonding regions. The first gate fingers extend in a first lateral direction and branch from at least one of a first gate line portion and a second gate line portion. Second gate fingers extend in the first lateral direction. A first length of any of the first gate fingers along the first lateral direction is greater than a second length of any of the second gate fingers along the first lateral direction. A sum of the first length and the second length is equal to or greater than a lateral distance between the first gate line portion and the second gate line portion along the first lateral direction.

Semiconductor diode (100), comprising: a wide bandgap semiconductor body (104) having a first surface (106) and a second surface (107) opposite the first surface (106), wherein the wide bandgap semiconductor body (104) has a first pn junction diode (102) having a first p-doped region (1021) adjacent to the first surface (106) and a first n-doped region (1022) adjacent to the first surface (106) and the second surface (107); a semiconductor element, wherein the semiconductor element has a second pn junction diode (112) having a second p-doped region (1121) and a second n-doped region (1122); a dielectric structure (110) between the wide band gap semiconductor body (104) and the semiconductor element and electrically insulating the wide band gap semiconductor body (104) from the semiconductor element; a cathode contact (C); an anode contact (A) above the first surface (106), wherein the anode contact is electrically connected to the second p-doped region (1121) and the first p-doped region (1021) is electrically coupled to the anode contact (A); where the band gap energy of the semiconductor element is lower than the band gap energy of the wide band gap semiconductor body (104); wherein the cathode contact (C) is electrically connected to the first n-doped region (1022) on the second surface (107); and wherein the second n-doped region (1122) of the second pn junction diode (112) is electrically coupled to the first n-doped region (1022) of the first pn junction diode.

A nuclear voltaic power source utilizing liquid xenon as a high-density scintillation transducer medium combined with radioisotopes for electrical power generation. Liquid xenon, maintained at cryogenic temperatures between −111.75 and −108.1 degrees Celsius, has a density of approximately 2942 kg / m3, providing roughly 545 times the radiation interaction density of gaseous xenon. Ionizing radiation from the radioisotope interacts with liquid xenon to form Xe2 excimers that emit VUV photons at approximately 175 nm with a yield of 46 photons / keV. These photons are absorbed by wide bandgap semiconductor converters (diamond, AlN, SiC, GaN) lining the containment structure, generating electron-hole pairs extracted as electrical current. The spherical containment geometry maximizes photon capture. Cryogenic thermal management using vacuum-jacketed insulation or active cooling maintains the liquid phase. Multiple cells may be connected in series-parallel arrays for scalable power output.

A method of characterizing a wide-bandgap semiconductor sample includes: depositing a corona charge on a surface of the sample; measuring a surface voltage at the region; irradiating the region with a series of ultraviolet (UV) radiation pulses to neutralize the deposited charge, wherein the increments of neutralized corona charge are linear with the pulse duration; measuring the surface voltage at the region after each UV radiation pulse and determining an average voltage in the pulse, and an incremental change of the surface voltage; and calculating a capacitance-voltage (C-V) characteristic for the region based on a series of capacitance values and surface voltage (V) values.