24 results about "Nanolithography" patented technology

The application relates to a local polarization enhanced nonlinear ionization nanolithography system and method, and belongs to the technical field of femtosecond laser processing. The nanolithography method has the capability of large-area processing, can process a large-area nanohole array on a material through a 'flying dotting' mode, can control the distance between adjacent points in the nanohole array by controlling the speed of a high-precision displacement table and the repetition frequency of femtosecond laser pulses, can control the size of the nanohole by controlling the pulse energy, can control the characteristic line width of a nanowire by controlling the pulse energy and the speed of the high-precision displacement table, and can realize the patterning processing of the nanowire by designing a pattern and introducing the high-precision displacement table.

A roller arrangement (10; 110) for a microlithography or nanolithography apparatus (1000) comprises a roller (12; 112) configured and / or operable to form a microscale or nanoscale pattern on a substrate (S). The roller (12;112) comprises a pattern layer (14; 114) configured and / or operable to form the microscale or nanoscale pattern on the substrate (S) and one or more inflatable elements (16; 116) reconfigurable between a first configuration in which the inflatable element (16; 116) defines a first outer diameter and a second configuration in which the inflatable element (16; 116) defines a second, larger, outer diameter. Reconfiguration of at least one of the inflatable elements (16; 116) from its first configuration to its second configuration urges the pattern layer (14; 114) radially outwards. A gas arrangement (1016) is configured and / or operable to direct a gas towards and / or into an interface between the roller (12; 112) and the substrate (S).

An exemplary holographic metasurface lithography system and method that project a hologram having two or more different wavelengths of light onto a hybrid resin to simultaneously or concurrently cure / form both (i) a first material structure, e.g., a metal structure and (ii) a second material structure, e.g., a polymer structure, from the hybrid resin in the same three-dimensional space. The hologram is generated by a metasurface mask that encodes spatial information for both the metal structure and the polymer structure, and the resin has both (i) UV-sensitive metal precursors to form the metal structure and (ii) monomers, crosslinkers, wavelength-selective photosystems to form the polymer structure.

The invention provides a horizontal-vertical composite nano-channel device and a preparation method thereof, the nano-channel device comprises an insulating substrate, an emitter, a nano-channel and a collector, carriers are transported in the nano-channel between the emitter and the collector to obtain high response speed and working frequency, and the performance of the device is improved. The nano channel of the device is simultaneously composed of a horizontal channel and a vertical channel, the horizontal channel and the vertical channel can be a medium channel or an air channel, the channel configuration can realize sufficient collection of electrons emitted by the emitter by the collector, the preparation of the device does not need a nano photoetching process, and the device is simple in structure and convenient to operate. Wafer-level batch preparation of the nano-channel device can be realized through a nano-film deposition process and a side wall process, and the device is not only suitable for electronic devices, but also suitable for photoelectric devices.

A process for fabricating a nano-embossed lithography replica comprises depositing a first resist layer over a substrate and selectively irradiating the first resist layer with actinic radiation. The selectively irradiated first resist layer is developed to create a structure within the first resist layer. The structure in the first resist layer is extended into the substrate to create a shape within the substrate. The first resist layer is removed from the substrate. A second resist layer is deposited over a replica blank. The second resist layer is brought into contact with the shape. The second resist layer is irradiated with actinic radiation. The shape and the irradiated second resist layer are separated. A structure is fabricated within the irradiated second resist layer.The structure in the second resist layer is extended into the replica blank, and the second resist layer is removed from the replica blank to produce a replica.

The application provides a method for determining a process window of nanolithography technology, which comprises the following steps: imaging according to a single-groove or single-line imaging model of a predetermined first critical dimension to obtain a first light intensity distribution curve corresponding to a plurality of focus values; imaging according to a multi-line imaging model of a predetermined second critical dimension to obtain a second light intensity distribution curve corresponding to the plurality of focus values; obtaining a first Poisson curve and a second Poisson curve respectively according to the first light intensity distribution curve and the second light intensity distribution curve; obtaining a first process window and a second process window respectively according to the first Poisson curve and the second Poisson curve; and determining an intersection part of the first process window and the second process window as a target process window. The method for determining the process window of nanolithography technology can obtain an applicable process window through a light intensity curve with a small amount of calculation, and effectively verifies the process window.

The invention provides a large-area nanometer photoetching module, a large-area nanometer photoetching device and a large-area nanometer photoetching method. The photoetching module comprises a focus detection alignment system and a large-area focus control and alignment deviation correction module, the focus detection alignment system is used for measuring focal plane information G and position deviation information P; and the large-area focus control and alignment deviation correction module comprises a wafer bearing table and a deformation regulation and control module F. The photoetching module can be compatible with masks and wafers with different layout sizes, a large-area exposure system, a focus detection alignment system and the masks are adopted, and exposure of the whole wafer can be completed only through one-time focus control, alignment and exposure; a large-area mask is adopted, and the exposure of the whole wafer can be completed through scanning exposure only by performing focus control and alignment once; by increasing the layout area and reducing the number of times of separation, stepping, focus control, alignment and exposure, stepping exposure of the whole wafer is realized by moving the wafer.

A roller arrangement (10; 110) for a microlithography or nanolithography apparatus (1000) comprises a roller (12; 112) configured and / or operable to form a microscale or nanoscale pattern on a substrate (S). The roller (12;112) comprises a pattern layer (14; 114) configured and / or operable to form the microscale or nanoscale pattern on the substrate (S) and one or more inflatable elements (16; 116) reconfigurable between a first configuration in which the inflatable element (16; 116) defines a first outer diameter and a second configuration in which the inflatable element (16; 116) defines a second, larger, outer diameter. Reconfiguration of at least one of the inflatable elements (16; 116) from its first configuration to its second configuration urges the pattern layer (14; 114) radially outwards. A gas arrangement (1016) is configured and / or operable to direct a gas towards and / or into an interface between the roller (12; 112) and the substrate (S).

The application relates to a myopia prevention and control optical lens based on zoning modulation and edge fusion, and belongs to the technical field of optical lenses. An optical function zone is sequentially provided with a central optical zone, an annular defocus zone and a point-shaped nano lithography point zone from the center of the lens outward, the central optical zone accurately corresponds to the macular fovea region of the retina, the annular defocus zone is arranged with concentric annular defocus microstructure units, and the point-shaped nano lithography point zone is arranged at the periphery of the annular defocus zone and the gap between the annular zones, and serves as an optical buffer zone to soften the optical transition edge.

The utility model discloses a three-dimensional (3D) colorful display vehicle logo. The 3D colorful display vehicle logo comprises a printing layer, an electroplating protection layer is arranged at the upper part of the printing layer; a PVD electroplated layer is arranged at the upper part of the electroplated protective layer; a UV transfer printing layer is arranged at the upper part of the PVD electroplated layer; a nano photoetching texture layer is arranged at the upper part of the UV transfer printing layer; and a polyester carbonate layer is arranged at the upper part of the nanometer photoetching texture layer. A vehicle logo product shows the light-transmitting effect through the in-film injection molding and electroplating technology, and the colorful high-end effect of the vehicle logo is reflected by adding the nanometer photoetching texture layer. An in-film injection molding process is adopted, a PC protection layer is arranged on the surface, meanwhile, UV-resistant hardening paint is sprayed, the colorful effect is well protected, and the use environment requirement of the vehicle logo is met; the appearance of the automobile logo is more stereoscopic, the automobile logo is rich in science and technology sense, the requirement for aesthetic feeling of people is met, the appearance and the function are improved, meanwhile, the production cost is reduced, and the product yield is increased.

The invention refers to a nanolithography system based on electric current that uses an array of electrically conductive sharp tips that emit electrons using the electric field emission phenomenon. The nanolithography system consists of the writing bloc (1), the XY translation bloc (6) of the substrate (7) in the horizontal plane, the substrate (7), the translation block (8) along the vertical Z direction normal to the substrate (7) plane, the vertical translation being made either for the substrate (7) or for the writing block (1), the voltage source (9) supplying an electric voltage between the tips array (2) and the substrate (7), the block (10) for reading the voltage between some of the tips of the tips array (2) and the substrate (7), the controller (11) for the management and monitoring of how all these blocks and voltage source (9) work, the computer (12) that, with the help of specific software packages, controls the overall and whole ensemble and allows editing of CAD models, conversion of CAD model formats and translation of the 2D patterns / 3D objects to be fabricated from their CAD format to the commands specific to each of the said blocks, the system containing also a fast feedback loop (22), a high precision electromechanical system (23) that rotates the tips array (2) around of at least one of the rotation axes that lies in the plane of the said tips array, the software package ensuring also the command of the light spatial modulator (3) and of the voltage source (9) according to the pattern that must de created onto substrate (7). The writing block (1) consists of the tips array (2), the spatial light modulator (3), the collimation optics (4) and the light source (5).

The invention discloses a method for high-throughput preparation of a precise-positioning extremely-small-size patterned atomic-scale nano-structure by a solution method and application of the precise-positioning extremely-small-size patterned atomic-scale nano-structure. The method comprises the following steps: printing on a substrate by adopting a solution method; ink adopted for printing is a solution of a segmented copolymer; the mass volume concentration of the solution of the block copolymer is 0.5 mg / mL to 150 mg / mL. The high-throughput prepared and accurately positioned large-area, multi-type monolithic integrated and multi-dimensional nano directional graphical atomic-scale nano-structure has nano-scale precision and highly ordered structural arrangement. A short-channel transistor constructed by the large-area and multi-dimensional nano directional graphical atomic-scale nano-structure has relatively high carrier mobility and relatively low threshold voltage, and a method is provided for the applied scientific research and industrialization of a guide self-assembly advanced nano-lithography technology in the future.

A method for the spatiotemporal mapping of receptor-ligand binding kinetics in localized surface plasmon resonance (LSPR) imaging using a chip for LSPR imaging having a glass coverslip compatible for use in a standard microscope and at least one array of functionalized plasmonic nanostructures patterned onto the glass coverslip with electron beam nanolithography and projecting a magnified image of the array to a CCD camera and monitoring the binding kinetics of the array. The nanostructures can be regenerated allowing the chip to be used multiple times.

The invention provides an infrared surface plasmon assisted thermal scanning probe nanometer etching system. The infrared surface plasmon assisted thermal scanning probe nanometer etching system comprises a nanometer probe table, a surface plasmon probe, an infrared laser module and an etching sample. During working, the infrared laser module guides etching laser to the surface plasmon probe, and the vertex of the needle point is heated by utilizing local light field enhancement at the needle point; and when the nano probe station controls the surface plasmon probe to horizontally move above the etching sample according to a predetermined track, the heat at the needle tip volatilizes the thermosensitive resist on the surface of the etching sample, so that the nano pattern is etched in the thermosensitive resist. According to the invention, the low-cost infrared continuous wave laser can be utilized to realize deep sub-wavelength nano-etching with the line width of dozens of nanowires, a new technical path is provided for a nano-etching system with low cost and high precision, the threshold of a nano-processing technology is reduced, and popularization and application of the nano-etching technology are expected to be promoted.

The invention discloses a near-field direct-writing nanometer pattern processing system based on interference type space phase imaging. The method comprises the following steps: firstly, preparing a photoetching head, depositing a hyperbolic dispersion cavity consisting of a plurality of groups of metals and dielectric films on a transparent substrate, then sputtering a layer of metal film on the hyperbolic dispersion cavity to serve as an excitation layer, and preparing a surface plasma lens for bunching incident light and a grating structure for interferometric space phase imaging on the surface of the excitation layer. And then spin-coating a tackifier and a photoresist photosensitive layer on the surface of the disc substrate. A gap between a photoetching head and a photoresist disc is detected by utilizing an interference type space phase imaging principle and is controlled to be about 20nm, the intensity and the working distance of a surface plasmon beaming light field are improved by utilizing a compensation effect of a hyperbolic dispersion cavity on the photoetching head, and energy attenuation of the surface plasmon in a photoetching direction is compensated; therefore, the depth-to-width ratio of a processing structure of the nano pattern processing system for direct-writing near-field photoetching based on interference type space phase imaging is improved, good steepness is achieved, and high-efficiency, high-resolution and low-cost direct-writing nano processing is achieved. The method can be applied to the field of nano photoetching.

This disclosure generally describes methods and systems for fabrication of high-quality surface relief waveguides for eyepieces. In particular, this disclosure describes techniques for manufacturing waveguides having surface relief features, such as diffractive gratings to achieve various optical effects, using nanolithographic imprinting techniques that reduce or eliminate the presence of gaps in the imprinted features through use of optimized drop patterns for dispensing photoresist. Moreover, the disclosure also describes techniques for manufacturing surface relief waveguides having a gradation, e.g., a substantially continuous grade or slope, between zones that have different residual layer thicknesses of the dispensed photoresist, and / or between zones having surface features of different height (or depth). Such gradation can reduce or eliminate adverse optical effects that may be caused by a more abrupt transition between zones, and increase the optical efficiency of the completed waveguide.

The invention provides a nano photoresist dry film form, a preparation method and a use method thereof. The dry film form of the nano photoresist comprises a sandwich structure formed by three layers of materials: the middle layer comprises PVA (Polyvinyl Alcohol) water-based photoresist or PMMA (Polymethyl Methacrylate) photoresist, the upper layer is covered with a release film as a protective layer, and the lower layer is a PDMS (Polydimethylsiloxane) carrier for supporting and transferring a photoresist film; the middle layer is a commercial functional photoresist, the upper side and the lower side of the middle layer are covered with a PVA water-based photoresist and a pure PVA water-based film respectively to serve as protective layers, the core functional layer is isolated and protected against lossless transfer, and the outermost layer is a release film on the top and a PDMS carrier on the bottom in sequence to support and achieve overall transfer of the photoresist film. According to the nano photoresist dry film form, the preparation method and the use method thereof, provided by the invention, the pattern resolution, the structural fidelity and the process compatibility can be improved, and the requirements on high-precision, low-cost and high-throughput micro-nano processing in the fields of microelectronic manufacturing, micro-nano optical element processing, micro-fluidic chips and the like are met.

A laser patterning method may include fabricating one or more precursor sites on a sample, generating an illumination beam including one or more pulse bursts, each pulse burst including two or more laser pulses, and scanning the illumination beam across the sample along a scan pattern including locations of the one or more precursor sites. At least one of intensities, temporal inter-pulse spacings, or spatial overlap between the two or more laser pulses in the illumination beam may be selected to selectively excite the one or more precursor sites to selectively modify the sample at the one or more precursor sites to form one or more patterned features, where a dimension of at least one feature in the one or more patterned features along at least one dimension is smaller than a size of the illumination beam on the sample.

A cladding-less GaN-based thin-film edge-emitting laser is formed by: attaching a typical LED wafer to a substrate; removing its sapphire substrate to expose its n-GaN and the u-GaN buffer layers; thinning the film thickness to maximize the overlap factor; depositing another reflective metallic layer on the n-GaN surface for optical confinement and electrical contact; defining a pattern of the edge-emitting cavity by nanolithography techniques; and using an ICP etch to transfer the pattern to the thin film. In a second embodiment, the LED epitaxy structure is transformed into a laser diode by bonding it to a substrate with a Bragg reflector. After bonding and substrate removal, the bottom of the LED epitaxy is exposed for etching. In a third embodiment, a polariton edge-emitting laser is formed by utilizing Distributed Bragg Reflectors (DBRs) on both sides of the edge-emitting laser.

A photonic integrated circuit (PIC 200), an optical system comprising such PIC and a method of processing a sample using such PIC are presented. The PIC comprising a plurality of scanning waveguides (112) and plasmonic nanostructures (114) in a tip of each of the scanning waveguides. The tip of the scanning waveguide is a part of the scanning waveguide where light exists or enters the PIC when in operation.

The invention provides a high-precision laser three-dimensional nanometer photoetching system based on a multiplexing type metasurface, which relates to the technical field of laser three-dimensional nanometer photoetching and comprises a light path modulation module, the multiplexing type metasurface, a sample clamping module and an image observation module which are positioned on the same axis, the light path modulation module is used for modulating exciting light emitted by the exciting light laser into circularly polarized light, modulating loss light emitted by the loss light laser into linearly polarized light and modulating deflection directions of the exciting light and the loss light; the multiplexing metasurface is used for focusing the exciting light and the loss light, so that the exciting light and the loss light respectively and correspondingly generate a tight focusing focus and a three-dimensional hollow light field at the same focus; the sample clamping module is used for translating and fixing a sample, so that the sample is positioned in an irradiation area of exciting light and loss light, and three-dimensional micro-nano structure processing is performed on the sample; and the image observation module is used for observing and recording the processing process of the three-dimensional micro-nano structure of the sample. According to the invention, the photoetching resolution can be improved.

The invention relates to an optical element (100) for a nanolithographic lithography system, comprising a body (101) in or on which at least one temperature sensor (102) for spatially resolved temperature detection is arranged, at least in certain areas. The body comprises at least one measuring structure (103) having at least one electrically conductive structure (104) with at least two terminals (105a,b) between which a temperature-dependent electrical resistance (106) is located. One of the terminals (105a) can be, or is, subjected to an alternating voltage at least temporarily, and a detection and evaluation unit of the temperature sensor (102) is configured to detect a measurement signal at at least one of the other terminals (105b) and convert it into a temperature, wherein the measurement signal is a variable resistance or a variable impedance.

The application provides a high-precision laser three-dimensional nanolithography system based on a multiplexed metasurface, relates to the technical field of laser three-dimensional nanolithography, and comprises a light path modulation module, a multiplexed metasurface, a sample clamping module and an image observation module on the same axis, the light path modulation module is used for modulating excitation light emitted by an excitation light laser into circularly polarized light, modulating loss light emitted by a loss light laser into linearly polarized light, and modulating the deflection directions of the excitation light and the loss light, the multiplexed metasurface is used for focusing the excitation light and the loss light, so that the excitation light and the loss light correspondingly generate tight focusing focal points and three-dimensional hollow light fields at the same focal point, the sample clamping module is used for translating and fixing a sample, so that the sample is located in the irradiation area of the excitation light and the loss light, and three-dimensional micro-nano structure processing is performed on the sample, and the image observation module is used for observing and recording the three-dimensional micro-nano structure processing process of the sample. The application helps to improve the lithography resolution.

The invention provides an etching method of a GST layer of a phase change memory, and belongs to the field of semiconductor integrated circuit manufacturing. The etching method of the present invention comprises: a lamination body forming step of forming a lamination body on a semiconductor substrate, the lamination body comprising a GST layer, a TiN layer, a SiN layer, an ARC layer and a PR layer which are sequentially formed from bottom to top, the thickness of the SiN layer being less than or equal to 60 nm; a photoetching step: exposing and developing the PR layer to form a patterned PR layer; a first etching step: etching the ARC layer and the SiN layer through the patterned PR layer to form a patterned SiN layer; and a second etching step: etching the TiN layer and the GST layer through the patterned SiN layer to form a patterned TiN layer and a patterned GST layer. Through the etching method provided by the invention, defects can be reduced, so that the product yield is improved. In addition, the manufacturing process is simplified, and the manufacturing cost is reduced.