27results about How to "Improve modulation efficiency" patented technology

The invention belongs to the technical field of power electronics, and relates to a hybrid device common bridge arm three-level split output inverter modulation method and system, and the method comprises the steps: obtaining a mapping phase angle, a modulation degree and a region number according to a reference voltage vector generated by a three-phase original modulation wave; mapping the phase angle, the modulation degree and the switching period according to the size of the modulation degree to obtain two kinds of vector action time; generating two modulation waves according to the area number and the action time of the two vectors; generating a first pulse driving signal according to the area number, the first modulation wave and the forward and reverse carrier waves; generating a final carrier according to the area number and the forward and reverse carriers, and generating a second pulse driving signal according to the second modulated wave, the forward carrier, the forward carrier of the previous period and the final carrier; and selecting a driving signal from the two pulse driving signals according to the area number. The modulation degree can be maximized, driving pulses are respectively generated in different modulation degree ranges, the output current quality is high, and the total harmonic distortion rate is low.

The invention discloses a silicon light modulator which comprises a silicon substrate, an insulating oxide layer, a top-layer silicon waveguide modulation region and a top-layer covering oxide layer which are stacked in sequence, and the top-layer silicon waveguide modulation region sequentially comprises an n-type heavily doped region, an n-type main doped region, a p-type main doped region and a p-type heavily doped region in the first direction. The invention further discloses a compensation doping method of the silicon light modulator. The silicon light modulator has the advantages that compensation doping is carried out on the flat plate region in an oblique ion implantation mode, and the effects of improving the bandwidth and the modulation efficiency of the silicon light modulator can be achieved at the same time. And compared with a single bandwidth optimization scheme and a single efficiency optimization scheme of the silicon optical modulator, the extra insertion loss introduced by the method is not obviously increased.

The invention belongs to the technical field of integrated photoelectronics, and discloses an MOS (Metal Oxide Semiconductor) type silicon-on-chip electro-optical modulator based on colloid nanocrystals and a preparation method thereof. The silicon waveguide layer is arranged above the waveguide cladding layer; optical couplers used for inputting and outputting optical signals are arranged at the two ends of the silicon waveguide layer; the dielectric layer is arranged above the silicon waveguide layer in a covering manner; a colloidal nanocrystalline layer disposed over the dielectric layer; the upper electrode layer is arranged above the colloid nanocrystalline layer; the lower electrode layer is communicated with the silicon waveguide layer; and the dielectric layer is used for changing the polarization state according to an external voltage and controlling the inductive charge concentration in the colloid nanocrystalline layer and the silicon waveguide layer through the polarization state. The room-temperature liquid phase processing procedure of the colloidal nanocrystal is simple, and is completely compatible with a silicon-based CMOS (Complementary Metal Oxide Semiconductor) process, so that low-cost and large-scale integration can be carried out; the colloidal nanocrystal has a plasma dispersion effect stronger than that of a silicon material, is easy to realize an ENZ effect, and can realize high modulation efficiency and high modulation depth.

The embodiment of the present invention discloses an optical signal sending device, including an optical modulator, a differential driver, and a phase modulator, wherein the optical modulator includes an optical input end, a first modulation area, a connection area, a second modulation area, and an optical output end; the first modulation area includes a first modulation arm and a second modulation arm, the second modulation area includes a third modulation arm and a fourth modulation arm, and each modulation arm includes an optical waveguide and electrodes on both sides thereof. The modulation of the photoelectric signal is realized by driving the two modulation areas with a differential drive signal, and the stacked arrangement of the modulation arms greatly reduces the volume of the optical modulator, thereby facilitating the miniaturization of devices and equipment.

The invention relates to the technical field of devices for light modulation, and discloses a graphene all-optical modulator and application thereof. The graphene all-optical modulator comprises a thin silicon groove waveguide, a mode converter unit and a silicon dioxide substrate, and the thin silicon groove waveguide and the mode converter unit are located on the silicon dioxide substrate. The two sides of the thin silicon groove waveguide are respectively connected with a group of mode converter units, and the two groups of mode converter units are symmetrically distributed on the two sides of the thin silicon groove waveguide; and the thin silicon groove waveguide is covered with a graphene-hexagonal boron nitride heterojunction. Compared with the prior art, the all-optical modulator has the advantages that interaction between light and substances can be effectively enhanced, efficient all-optical modulation is achieved, meanwhile, the all-optical modulator has ultrafast response time and broadband modulation capacity, new possibility is provided for development of optical communication and optical information processing technologies, and the all-optical modulator is of great significance to development of ultrafast low-energy-consumption silicon-based optoelectronic chips.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a high-speed electro-optical modulator based on a heterogeneous integrated waveguide and a preparation method thereof, and belongs to the technical field of planar optical waveguide optical modulators and preparation thereof. The sensor is composed of a silicon substrate, a silicon dioxide oxide layer, a lead zirconate titanate flat plate layer, a polymer flat plate layer, a first grounding electrode, a signal electrode, a second grounding electrode and a polymer strip-shaped layer from bottom to top in sequence. The polymer strip-shaped layer and the polymer flat plate layer are made of the same material, and the refractive index of the polymer strip-shaped layer is lower than that of the lead zirconate titanate flat plate layer. The polymer flat plate layer prevents direct contact between lead zirconate titanate and the electrode, so that the loss of the modulator is greatly reduced. When an electric field is externally applied, the electric field is uniformly distributed between the signal electrode and the grounding electrode, and the thickness of the polymer flat plate layer and the size of the polymer strip-shaped layer are designed, so that more light fields are controlled in the lead zirconate titanate flat plate layer, and the electro-optical modulation efficiency is further improved. The manufacturing process is simplified, and the method has the advantages of low production cost, high efficiency and the like.

The invention relates to the technical field of electro-optical modulators, in particular to a sinking type double-layer electrode lithium niobate electro-optical modulator which comprises a substrate, an oxide layer, an optical waveguide, a transition layer and a metal electrode. The substrate is located at the bottommost part, the oxide layer is located at the top of the substrate, the optical waveguide, the transition layer and the metal electrode are all arranged above the oxide layer, the optical waveguide is an X-shaped cut LN film and adopts a traditional ridge-shaped structure, and the metal electrode is of a double-layer electrode structure and comprises a first layer of traveling wave electrode and a second layer of T-shaped structure electrode. Loss can be effectively reduced, and modulation efficiency is improved. In order to reduce the light absorption loss, the metal electrode and the optical waveguide are separated by using a 0.2 mu m silicon dioxide transition layer, the metal electrode is arranged along the Z axis of the optical waveguide, and the sunken double-layer electrode lithium niobate electro-optical modulator realizes the half-wave voltage length product of 1.52 V.cm under the light absorption loss of 0.14 dB / cm, and has important guiding significance for the design of the electro-optical modulator.

The application provides a vertical resonant MEMS electric field sensor based on GIS-SOI-GOS, which is composed of GIS layer, SOI layer and GOS layer. The GIS layer comprises an upper driving electrode, an insulating ring, conductive silicon, a plurality of through holes and a groove on a glass layer, and the upper driving electrode is insulated from the conductive silicon through the insulating ring. The SOI layer is composed of a device layer, a buried oxygen layer and a substrate layer, the device layer is provided with a lower driving electrode, a shielding electrode, an induction electrode, an elastic beam and an anchor point, and the buried oxygen layer and the substrate layer are etched to have a hollow window, which together with the groove on the glass layer below the GIS provides a vertical vibration space for a movable structure. The GOS layer comprises an electric field induction cover plate and a glass layer provided with a window, and is used to establish an electric field induction channel. The application realizes integrated wafer-level preparation of a sensitive structure and vacuum packaging of the vertical resonant MEMS electric field sensor, and has the characteristics of high electric field induction efficiency, high quality factor, low driving voltage and the like.

The present invention provides a micro-ring modulator and a method for preparing the same, wherein the method comprises: providing a substrate layer; forming a coupled waveguide and a micro-ring resonant structure arranged in parallel on the substrate layer, wherein the micro-ring resonant structure comprises a first doping structure and a second doping structure stacked in sequence along the thickness direction of the substrate layer, wherein the first doping structure and the second doping structure have opposite doping types; and forming an electrode electrically connected to the micro-ring resonant structure.

The application provides a Mach-Zehnder electro-optical modulator and a modulation method. The modulator comprises a silicon substrate layer, a first silicon dioxide layer is arranged on the silicon substrate layer, a first coplanar waveguide electrode is embedded in the first silicon dioxide layer, a waveguide layer is arranged on the first silicon dioxide layer, and the first coplanar waveguide electrode and the waveguide layer are in contact. A second coplanar waveguide electrode is arranged on the surface of the waveguide layer away from the first silicon dioxide layer, and a second silicon dioxide layer is coated in the gap formed by the waveguide layer and the second coplanar waveguide electrode. The first coplanar waveguide electrode and the second coplanar waveguide electrode are supplied with voltage signals of the same frequency and the same phase.

This invention discloses a bit-loading-based HPLC signal processing method, belonging to the field of power line carrier communication technology. The bit-loading-based HPLC signal processing method includes: reading bit data from a channel interleaving module and sequentially writing it into a first bit buffer queue according to a preset number of bits to be read from the channel interleaving module; in bit-loading mode, determining the target number of bits to be filled for each subcarrier based on the modulation scheme corresponding to each subcarrier; different modulation schemes correspond to different target bit numbers; sequentially reading the target number of bits from the first bit buffer queue according to the writing order, and mapping the read-out bit data to the corresponding subcarrier for modulation and transmission. This invention achieves efficient rate matching for data processing in bit-loading mode and data transmission without subcarriers crossing physical blocks.

The invention discloses a PWM (Pulse Width Modulation) method, electronic equipment and a storage medium. The method comprises the following steps: carrying out per-unit processing and anti-Clark transformation processing on a voltage under a two-phase static coordinate system to obtain a three-phase voltage; selecting at least one of a plurality of PWM modulation modes according to the three-phase voltage, and obtaining a zero sequence signal according to the selected PWM modulation mode; and determining the duty ratio of the control signal according to the three-phase voltage and the zero sequence signal. According to the technical scheme provided by the invention, a set of multiple PWM modulation modes can be realized, the most suitable modulation method is flexibly selected according to specific application requirements, and the modulation convenience is improved, so that the modulation efficiency is improved.

The invention discloses a preparation method of a waveguide-integrated three-lamination graphene electro-optical modulator, which adopts a three-lamination graphene capacitor structure, enhances the interaction between graphene and light, and can improve the device modulation efficiency and reduce the insertion loss under the same device size. The first graphene layer and the third graphene layer adopt an interconnection design, and after the third graphene layer is transferred, residual water is removed by adopting a vacuum annealing process, so that the third graphene layer can be attached to the surfaces of the first graphene layer and the dielectric layer, a device control circuit is simplified, and device miniaturization is facilitated.

The application provides a service data transmission method, device, equipment and medium. In the method, after receiving a service data sending request, if it is judged that whether the modulation and coding strategy indication is allowed to be changed, it is indicated that the current node device can select the modulation and coding strategy, and then the target modulation and coding strategy level is determined according to the stored transmission information table, and the service data is sent according to the modulation and coding strategy corresponding to the target modulation and coding strategy level. According to the present application, the target modulation and coding strategy level is determined according to the transmission information table, and the service data is sent according to the modulation and coding strategy corresponding to the target modulation and coding strategy level, so that the current node device can send the service data at a faster modulation efficiency, and the modulation efficiency is effectively improved.

The embodiment of the invention provides an electro-optical modulator, a photon chip and a light quantum computer. The electro-optical modulator comprises a grounding electrode assembly and a signal electrode assembly. The ground electrode assembly includes a first ground electrode and a second ground electrode. The signal electrode assembly is located between the first ground electrode and the second ground electrode. The signal electrode assembly includes a positive signal electrode and a negative signal electrode. The signal electrode assembly is provided with the groove, equivalently, the current path of microwaves is prolonged, the distributed inductance of a transmission line is increased, the microwave speed is reduced, speed matching is more effectively achieved, the large distributed inductance is beneficial to increasing the characteristic impedance of the electrode, impedance matching is achieved, the reflection coefficient of radio-frequency signals is reduced, and the transmission efficiency of the radio-frequency signals is improved. Flat frequency response and higher effective driving voltage are obtained, and bandwidth and modulation efficiency are improved. The overall width of the signal electrode assembly does not change obviously, so that the transmission quality and stability of the system are ensured.

The embodiment of the present disclosure provides an electro-optical modulator and an optical quantum computer. The electro-optical modulator comprises an electrode assembly and an optical waveguide assembly. The electrode assembly comprises a positive signal electrode, a negative signal electrode, a first ground electrode and a second ground electrode, and the positive signal electrode and the negative signal electrode are arranged between the first ground electrode and the second ground electrode. The optical waveguide assembly is configured to carry an optical signal, and comprises a first optical waveguide and a second optical waveguide. The first optical waveguide is located between the positive signal electrode and the negative signal electrode and is used to carry a first optical signal. The second optical waveguide is located between the first ground electrode and the positive signal electrode or between the second ground electrode and the negative signal electrode and is used to carry a second optical signal. The application of equal-amplitude voltage signals with opposite phases to the closely coupled positive signal electrode and the negative signal electrode helps to improve the modulation efficiency and reduce common-mode noise.

The invention belongs to the technical field of integrated photoelectronics, and discloses a PN junction injection type silicon-based electro-optical modulator based on colloid nanocrystals and a preparation method of the PN junction injection type silicon-based electro-optical modulator. The silicon waveguide layer is arranged above the waveguide cladding layer; optical couplers for inputting and outputting optical signals are processed at the two ends of the silicon waveguide layer; the lower electrode layer is communicated with the silicon waveguide layer; the colloid nanocrystalline layer is prepared from oxide semiconductor colloid nanocrystalline and arranged above the silicon waveguide layer, and the colloid nanocrystalline layer and the silicon waveguide layer form a PN junction; and the upper electrode layer is arranged above the colloid nanocrystalline layer. The problems that an existing silicon-based electro-optical modulator is low in modulation efficiency, tedious in processing and difficult in heterogeneous integration are effectively solved, and the silicon-based electro-optical modulator has the advantages of solution preparation and processing substrate compatibility, large-scale integration, high modulation efficiency, high modulation depth, small size and the like, and is expected to promote development of a silicon-based optoelectronic chip towards the direction of high integration.

The invention discloses a space vector pulse width modulation implementation method and device, equipment and a storage medium. The space vector pulse width modulation implementation method comprises the following steps: acquiring three-phase current or three-phase voltage of a motor control circuit so as to calculate voltage control of a motor according to three-phase sampling parameters; performing coordinate system conversion on the voltage control quantity to obtain a three-phase voltage component after coordinate conversion; obtaining a zero-sequence component of the motor according to the three-phase voltage component, and obtaining a three-phase control voltage according to the three-phase voltage component and the zero-sequence component; and obtaining a switching time switching point of each bridge arm in a three-phase inverter of the motor according to the three-phase control voltage. Through a mode of injecting a zero-sequence component and calculating a saddle waveform, the links of sector judgment and main and auxiliary vector action time calculation of each sector are reduced, the calculation amount of space vector pulse width modulation is reduced, and the modulation efficiency is improved.

The invention relates to the technical field of semiconductors, and discloses a piezoelectric-thermo-optic composite modulator and a preparation method thereof, and the piezoelectric-thermo-optic composite modulator comprises a silicon optical integrated circuit structure which comprises a substrate layer and a waveguide core located at one side of the substrate layer; the thermo-optical modulation structure is positioned on one side, back to the substrate layer, of the waveguide core; the thermo-optical modulation structure comprises a heating fixed-value resistor and a thermo-optical electrode; the position of the heating fixed-value resistor corresponds to the position of the waveguide core; the thermo-optical electrode is connected with a heating fixed-value resistor; the piezoelectric modulation structure is positioned on one side, back to the substrate layer, of the waveguide core; the piezoelectric modulation structure comprises a first piezoelectric electrode, a piezoelectric film material layer and a second piezoelectric electrode which are stacked; the position of the piezoelectric film material layer corresponds to the position of the waveguide core; and the first piezoelectric electrode further extends to the side part of the piezoelectric film material layer. Compared with the prior art, piezoelectric modulation and thermo-optical modulation can be achieved at the same time, the driving voltage of pi phase shift adjustment is reduced, and the modulation speed is increased.

The present invention is related to the field of optical systems, specifically a visible light modulator for high-speed optical communication and optical computing, comprising: a modulator substrate, a thin film optical waveguide layer, an input optical waveguide, an output optical waveguide, an optical distribution device, a plurality of photodetectors, a radio frequency electrode, and a bias electrode. This modulator effectively improves the modulation efficiency and response speed of optical signals; greatly improves the bandwidth and modulation efficiency of the modulator; reduces the loss problem existing in traditional mode conversion, and significantly improves the optical signal transmission efficiency and system reliability.

The application discloses a biomolecule detection method and device based on water plowing effect and application thereof, and belongs to the technical field of biology. The method comprises the following steps: introducing a liquid sample to be detected into a micro-nano flow channel, the inner wall surface of which is decorated with specific recognition molecules for target biomolecules, so that the liquid sample to be detected flows in the micro-nano flow channel and generates a water plowing electric signal; collecting the water plowing electric signal; and judging whether the target biomolecules are contained in the liquid sample to be detected according to the change of the water plowing electric signal. The detection process of the application does not depend on fluorescence, enzymes or other markers, and does not involve complex biochemical reaction steps. The detection signal is generated by the liquid flow itself, and an external excitation power source is not needed, so that the target biomolecules can be rapidly detected.

The invention discloses an electro-optical modulator and a preparation method thereof. The electro-optical modulator comprises an electro-optical material film wafer; the covering belt is arranged on the upper surface of the electro-optical material film wafer and is used for restraining a transverse electric mode; the traveling wave electrodes are arranged on the upper surface of the electro-optical material film wafer and located on the two sides of the covering belt. According to the invention, the preparation of the high-performance electro-optical modulator on the non-etching electro-optical material film is realized.

The present invention relates to the technical field of electro-optic modulators, and specifically to an electro-optic modulator based on a thin-film electro-optic material heterogeneous integration platform and a corresponding preparation method. The electro-optic modulator comprises a base wafer substrate, an electro-optic material thin film, an optical waveguide embedded in the electro-optic material thin film, the electro-optic material thin film is bonded to the base wafer substrate through a bonding layer, and then a coplanar stripline transmission line is arranged on the electro-optic material thin film. Compared with a traditional bulk material modulator, the electro-optic modulator effectively prevents leakage mode phenomenon at high frequencies by reducing the thickness of the electro-optic material, thereby increasing bandwidth and modulation efficiency; compared with a traditional thin film modulator, the electro-optic modulator has a higher yield and lower cost.

The application discloses an arbitrary focal field energy flow regulation method and system for microparticle manipulation, which comprises the following steps: firstly, defining the complex amplitude distribution of the incident plane vector light field according to the preset manipulation requirement of the microparticle; then, encoding the complex amplitude distribution to a phase type spatial light modulator, and then synthesizing the incident plane vector light field; focusing the synthesized incident plane vector light field to a high numerical aperture objective lens; using the vector diffraction integral, mapping the incident plane vector light field to the focal domain electric field distribution according to the mapping relationship between the numerical aperture of the objective lens and the incident plane coordinates and the objective lens angle coordinates; calculating the three-dimensional energy flow vector distribution of the focal domain according to the focal domain electric field distribution; adjusting the complex amplitude distribution to change the topological structure and spatial scale of the three-dimensional energy flow vector distribution of the focal domain; and placing the microparticle to be manipulated in the focal domain, so that the microparticle realizes the preset capture, transportation, rotation or multi-position arrangement manipulation under the action of the optical force generated by the local energy flow.

This invention provides a thermo-optical phase shifter array and its formation method, comprising: forming multiple waveguides, wherein the multiple waveguides have the same length in a first direction and the same width in a second direction, and the first and second directions are perpendicular to each other; forming electrodes on the surface of each waveguide, wherein the area of ​​the multiple electrodes on the plane formed by the first and second directions gradually increases along the second direction; forming a dielectric layer on the surface of each electrode, the dielectric layer filling the gaps between adjacent electrodes and adjacent waveguides; forming isolation trenches in the dielectric layer and buried oxide layer on both sides of each waveguide along the second direction and in the underlying silicon layer below each waveguide, wherein the waveguides and the buried oxide layer below the waveguides are suspended on the isolation trenches, and the area of ​​the multiple isolation trenches located below the waveguides on the plane formed by the first and second directions gradually decreases along the second direction. This invention achieves a balance between modulation rate and modulation efficiency while satisfying the phase shift requirement.

The invention discloses a silicon dioxide-silicon nitride-lead zirconate titanate hybrid waveguide electro-optical modulator, and belongs to the technical field of optical modulators. The electro-optical modulator is composed of a silicon-based substrate, a lower wrapping layer, an optical waveguide core layer, a spacing layer and a metal electrode from bottom to top in sequence. The optical waveguide core layer is wrapped between the lower wrapping layer and the spacing layer, adopts a loaded strip-shaped waveguide structure and is composed of a flat-plate-shaped lower optical waveguide core layer and a strip-shaped upper optical waveguide core layer; the strip-shaped upper optical waveguide core layer is of an MZI type structure and is composed of an input straight waveguide, a 1 * 2 input multi-mode interference coupler, a first input S bent waveguide, a second input S bent waveguide, a first modulation straight waveguide, a second modulation straight waveguide, a first output S bent waveguide, a second output S bent waveguide, a 2 * 1 output multi-mode interference coupler and an output straight waveguide. According to the invention, the high-speed electro-optical modulator with a silicon dioxide-silicon nitride-lead zirconate titanate mixed waveguide structure, which has low loss and high modulation efficiency, is finally obtained.