The application provides a vertical resonant MEMS
electric field sensor based on GIS-SOI-GOS, which is composed of GIS layer, SOI layer and GOS layer. The GIS layer comprises an upper driving
electrode, an insulating ring, conductive
silicon, a plurality of through holes and a groove on a glass layer, and the upper driving
electrode is insulated from the conductive
silicon through the insulating ring. The SOI layer is composed of a device layer, a buried
oxygen layer and a substrate layer, the device layer is provided with a lower driving
electrode, a shielding electrode, an induction electrode, an
elastic beam and an
anchor point, and the buried
oxygen layer and the substrate layer are etched to have a hollow window, which together with the groove on the glass layer below the GIS provides a
vertical vibration space for a movable structure. The GOS layer comprises an
electric field induction cover plate and a glass layer provided with a window, and is used to establish an
electric field induction channel. The application realizes integrated
wafer-level preparation of a sensitive structure and vacuum packaging of the vertical resonant MEMS
electric field sensor, and has the characteristics of high electric field induction efficiency, high quality factor, low driving
voltage and the like.