39results about How to "Improve modulation efficiency" patented technology

The invention belongs to the technical field of power electronics, and relates to a hybrid device common bridge arm three-level split output inverter modulation method and system, and the method comprises the steps: obtaining a mapping phase angle, a modulation degree and a region number according to a reference voltage vector generated by a three-phase original modulation wave; mapping the phase angle, the modulation degree and the switching period according to the size of the modulation degree to obtain two kinds of vector action time; generating two modulation waves according to the area number and the action time of the two vectors; generating a first pulse driving signal according to the area number, the first modulation wave and the forward and reverse carrier waves; generating a final carrier according to the area number and the forward and reverse carriers, and generating a second pulse driving signal according to the second modulated wave, the forward carrier, the forward carrier of the previous period and the final carrier; and selecting a driving signal from the two pulse driving signals according to the area number. The modulation degree can be maximized, driving pulses are respectively generated in different modulation degree ranges, the output current quality is high, and the total harmonic distortion rate is low.

The invention discloses a lithium niobate electro-optical modulator based on interdigital electrodes. The lithium niobate electro-optical modulator comprises a coplanar waveguide electrode structure containing periodically arranged interdigital electrodes, two groups of six modulation waveguides, two groups of four optical waveguide delay lines, two groups of multimode interference couplers, an input waveguide, an output waveguide and a pair of coupling gratings. According to the device, an interdigital electrode structure is used for constructing six electro-optical modulation sections in an upper group and a lower group, and optical waveguide delay lines are used for aligning phases of different electro-optical modulation sections to form an upper group of modulation arms and a lower group of modulation arms. An optical signal enters the input waveguide from the coupling grating on the left side, is divided into two beams through the multi-mode interference coupler, is subjected to equal-size and opposite modulation effects on the upper and lower groups of modulation arms, is combined and coupled in the second multi-mode interference coupler to generate an intensity modulation effect, and is output through the output waveguide and the coupling grating. The electro-optical modulator provided by the invention can be further expanded on the number of times of electrode multiplexing, and is compatible with other multiplexing technologies at the same time.

The invention discloses a silicon light modulator which comprises a silicon substrate, an insulating oxide layer, a top-layer silicon waveguide modulation region and a top-layer covering oxide layer which are stacked in sequence, and the top-layer silicon waveguide modulation region sequentially comprises an n-type heavily doped region, an n-type main doped region, a p-type main doped region and a p-type heavily doped region in the first direction. The invention further discloses a compensation doping method of the silicon light modulator. The silicon light modulator has the advantages that compensation doping is carried out on the flat plate region in an oblique ion implantation mode, and the effects of improving the bandwidth and the modulation efficiency of the silicon light modulator can be achieved at the same time. And compared with a single bandwidth optimization scheme and a single efficiency optimization scheme of the silicon optical modulator, the extra insertion loss introduced by the method is not obviously increased.

The invention discloses an electro-optical modulator, a preparation method thereof and an electro-optical element, and relates to the technical field of photoelectronics, the electro-optical modulator comprises a base layer, a first functional layer and a second functional layer; the first functional layer is arranged on one side of the base layer, and one side, deviating from the base layer, of the first functional layer is provided with at least one of a waveguide layer and a modulation layer; the second functional layer wraps the first functional layer, and an electrode structure is arranged on one side, deviating from the first functional layer, of the second functional layer, so that the electrode structure and the first functional layer are mutually isolated; according to the technical scheme, the modulation efficiency of the electro-optical modulator can be improved.

The invention belongs to the technical field of wireless communication and sensing positioning, and discloses a communication and sensing integrated system capable of realizing two-dimensional positioning, which comprises a transmitting end, a transmission end, a communication receiving end and a sensing receiving end, firstly, independent sideband modulation is realized by using a single I / Q modulator, and optical signals of an upper sideband and a lower sideband respectively carry different signals; and then, carrying out beat frequency on an LFM odd-order sideband signal generated by an intensity modulator IM to generate an MQAM-LFM modulated terahertz integrated electric signal, thereby realizing distance measurement, angle measurement and communication functions. The communication and perception integrated system capable of realizing two-dimensional positioning has the functions of high-speed communication and high-precision distance and angle measurement at the same time, and solves the problem that high-speed communication and high-precision perception cannot be realized by using a waveform technology at present; and a solution is provided for realizing two-dimensional coordinate measurement of the current communication perception integrated system.

The invention belongs to the technical field of integrated photoelectronics, and discloses an MOS (Metal Oxide Semiconductor) type silicon-on-chip electro-optical modulator based on colloid nanocrystals and a preparation method thereof. The silicon waveguide layer is arranged above the waveguide cladding layer; optical couplers used for inputting and outputting optical signals are arranged at the two ends of the silicon waveguide layer; the dielectric layer is arranged above the silicon waveguide layer in a covering manner; a colloidal nanocrystalline layer disposed over the dielectric layer; the upper electrode layer is arranged above the colloid nanocrystalline layer; the lower electrode layer is communicated with the silicon waveguide layer; and the dielectric layer is used for changing the polarization state according to an external voltage and controlling the inductive charge concentration in the colloid nanocrystalline layer and the silicon waveguide layer through the polarization state. The room-temperature liquid phase processing procedure of the colloidal nanocrystal is simple, and is completely compatible with a silicon-based CMOS (Complementary Metal Oxide Semiconductor) process, so that low-cost and large-scale integration can be carried out; the colloidal nanocrystal has a plasma dispersion effect stronger than that of a silicon material, is easy to realize an ENZ effect, and can realize high modulation efficiency and high modulation depth.

The embodiment of the present invention discloses an optical signal sending device, including an optical modulator, a differential driver, and a phase modulator, wherein the optical modulator includes an optical input end, a first modulation area, a connection area, a second modulation area, and an optical output end; the first modulation area includes a first modulation arm and a second modulation arm, the second modulation area includes a third modulation arm and a fourth modulation arm, and each modulation arm includes an optical waveguide and electrodes on both sides thereof. The modulation of the photoelectric signal is realized by driving the two modulation areas with a differential drive signal, and the stacked arrangement of the modulation arms greatly reduces the volume of the optical modulator, thereby facilitating the miniaturization of devices and equipment.

The invention relates to the technical field of devices for light modulation, and discloses a graphene all-optical modulator and application thereof. The graphene all-optical modulator comprises a thin silicon groove waveguide, a mode converter unit and a silicon dioxide substrate, and the thin silicon groove waveguide and the mode converter unit are located on the silicon dioxide substrate. The two sides of the thin silicon groove waveguide are respectively connected with a group of mode converter units, and the two groups of mode converter units are symmetrically distributed on the two sides of the thin silicon groove waveguide; and the thin silicon groove waveguide is covered with a graphene-hexagonal boron nitride heterojunction. Compared with the prior art, the all-optical modulator has the advantages that interaction between light and substances can be effectively enhanced, efficient all-optical modulation is achieved, meanwhile, the all-optical modulator has ultrafast response time and broadband modulation capacity, new possibility is provided for development of optical communication and optical information processing technologies, and the all-optical modulator is of great significance to development of ultrafast low-energy-consumption silicon-based optoelectronic chips.

The invention provides a reflection-based folding Mach-Zehnder electric field sensor and a measurement system, and the electric field sensor comprises an end face coupling structure and a thin-film lithium niobate platform. A thin film lithium niobate silicon substrate, a thin film lithium niobate silicon dioxide substrate, a thin film lithium niobate flat plate layer, a ridge waveguide layer and a silicon dioxide coating layer are sequentially arranged in the thin film lithium niobate platform from bottom to top; wherein the ridge-shaped waveguide layer comprises a multi-mode interferometer, an F-like electrode module, a U-shaped waveguide structure and a Bragg grating; the end face coupling structure is connected with a multi-mode interferometer located at the front end of the ridge-shaped waveguide layer; the multimode interferometer is connected to the front end of the F-like electrode module; the U-shaped waveguide structure is arranged at the tail end of the ridge-shaped waveguide layer and is connected with the F-like electrode module; after the U-shaped waveguide structure is folded, the tail end of the F-like electrode module is connected with the Bragg grating.

The invention discloses an electro-optical modulation structure with high modulation efficiency, which comprises a ground electrode, a signal electrode, an optical waveguide and a substrate, and is characterized in that the ground electrode, the signal electrode and the optical waveguide are all arranged on the substrate, the optical waveguide is positioned between the ground electrode and the signal electrode, and the electrode materials of the ground electrode and the signal electrode are near-zero refractive index electrode materials; the ground electrode and the signal electrode are used for generating an electric field acting on the optical waveguide, so that the electro-optical characteristic of the optical waveguide is changed. The embodiment of the invention is simple in structure, can effectively improve the electro-optical modulation efficiency, and can be widely applied to the technical field of electro-optical modulation.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a high-speed electro-optical modulator based on a heterogeneous integrated waveguide and a preparation method thereof, and belongs to the technical field of planar optical waveguide optical modulators and preparation thereof. The sensor is composed of a silicon substrate, a silicon dioxide oxide layer, a lead zirconate titanate flat plate layer, a polymer flat plate layer, a first grounding electrode, a signal electrode, a second grounding electrode and a polymer strip-shaped layer from bottom to top in sequence. The polymer strip-shaped layer and the polymer flat plate layer are made of the same material, and the refractive index of the polymer strip-shaped layer is lower than that of the lead zirconate titanate flat plate layer. The polymer flat plate layer prevents direct contact between lead zirconate titanate and the electrode, so that the loss of the modulator is greatly reduced. When an electric field is externally applied, the electric field is uniformly distributed between the signal electrode and the grounding electrode, and the thickness of the polymer flat plate layer and the size of the polymer strip-shaped layer are designed, so that more light fields are controlled in the lead zirconate titanate flat plate layer, and the electro-optical modulation efficiency is further improved. The manufacturing process is simplified, and the method has the advantages of low production cost, high efficiency and the like.

The invention relates to the technical field of electro-optical modulators, in particular to a sinking type double-layer electrode lithium niobate electro-optical modulator which comprises a substrate, an oxide layer, an optical waveguide, a transition layer and a metal electrode. The substrate is located at the bottommost part, the oxide layer is located at the top of the substrate, the optical waveguide, the transition layer and the metal electrode are all arranged above the oxide layer, the optical waveguide is an X-shaped cut LN film and adopts a traditional ridge-shaped structure, and the metal electrode is of a double-layer electrode structure and comprises a first layer of traveling wave electrode and a second layer of T-shaped structure electrode. Loss can be effectively reduced, and modulation efficiency is improved. In order to reduce the light absorption loss, the metal electrode and the optical waveguide are separated by using a 0.2 mu m silicon dioxide transition layer, the metal electrode is arranged along the Z axis of the optical waveguide, and the sunken double-layer electrode lithium niobate electro-optical modulator realizes the half-wave voltage length product of 1.52 V.cm under the light absorption loss of 0.14 dB / cm, and has important guiding significance for the design of the electro-optical modulator.

The embodiment of the invention provides a micro-ring modulator and a forming method thereof, and the micro-ring modulator comprises a straight waveguide and an annular waveguide coupled with the straight waveguide. The annular waveguide comprises a low-power-consumption control part which comprises a first doped region and a second doped region which are arranged along a first direction and are opposite in doping type; the projection of the interface of the first doped region and the second doped region in the second direction is bent; the high-speed modulation part comprises a third doped region and a fourth doped region which are arranged along the first direction and have opposite doping types; and the coupling waveguide part is connected with the low-power-consumption control part and the high-speed modulation part and is positioned on one side of the straight waveguide.

The application provides a vertical resonant MEMS electric field sensor based on GIS-SOI-GOS, which is composed of GIS layer, SOI layer and GOS layer. The GIS layer comprises an upper driving electrode, an insulating ring, conductive silicon, a plurality of through holes and a groove on a glass layer, and the upper driving electrode is insulated from the conductive silicon through the insulating ring. The SOI layer is composed of a device layer, a buried oxygen layer and a substrate layer, the device layer is provided with a lower driving electrode, a shielding electrode, an induction electrode, an elastic beam and an anchor point, and the buried oxygen layer and the substrate layer are etched to have a hollow window, which together with the groove on the glass layer below the GIS provides a vertical vibration space for a movable structure. The GOS layer comprises an electric field induction cover plate and a glass layer provided with a window, and is used to establish an electric field induction channel. The application realizes integrated wafer-level preparation of a sensitive structure and vacuum packaging of the vertical resonant MEMS electric field sensor, and has the characteristics of high electric field induction efficiency, high quality factor, low driving voltage and the like.

The present invention provides a micro-ring modulator and a method for preparing the same, wherein the method comprises: providing a substrate layer; forming a coupled waveguide and a micro-ring resonant structure arranged in parallel on the substrate layer, wherein the micro-ring resonant structure comprises a first doping structure and a second doping structure stacked in sequence along the thickness direction of the substrate layer, wherein the first doping structure and the second doping structure have opposite doping types; and forming an electrode electrically connected to the micro-ring resonant structure.

The present invention relates to the technical field of deep processing of plants, specifically to a high F value oligopeptide production equipment, including a crushing box, a purification box, a modulation box, a condenser and a concentration and drying tower, the crushing box is connected to the purification box, one side of the purification box is connected to a feed box, the other end of the feed box is connected to the modulation box, the bottom of the modulation box is connected to the condenser through a water pump, and the other end of the condenser is connected to the upper part of the concentration and drying tower. The present invention removes the crushing box shell and crushes and purifies the seeds of the plant to be prepared, and then further hydrolyzes them with enzymes to reduce the complexity of organic solvent treatment. After the material enters the concentration and drying tower, it passes through the concentration and drying tube, and the water vapor is evaporated to obtain a dry finished product, so as to prevent the finished product from deliquescence and reduce the quality of the high F value oligopeptide, improve the processing efficiency while ensuring the quality of the finished product, and simplify the process to reduce costs.

The application provides a Mach-Zehnder electro-optical modulator and a modulation method. The modulator comprises a silicon substrate layer, a first silicon dioxide layer is arranged on the silicon substrate layer, a first coplanar waveguide electrode is embedded in the first silicon dioxide layer, a waveguide layer is arranged on the first silicon dioxide layer, and the first coplanar waveguide electrode and the waveguide layer are in contact. A second coplanar waveguide electrode is arranged on the surface of the waveguide layer away from the first silicon dioxide layer, and a second silicon dioxide layer is coated in the gap formed by the waveguide layer and the second coplanar waveguide electrode. The first coplanar waveguide electrode and the second coplanar waveguide electrode are supplied with voltage signals of the same frequency and the same phase.

This invention discloses a bit-loading-based HPLC signal processing method, belonging to the field of power line carrier communication technology. The bit-loading-based HPLC signal processing method includes: reading bit data from a channel interleaving module and sequentially writing it into a first bit buffer queue according to a preset number of bits to be read from the channel interleaving module; in bit-loading mode, determining the target number of bits to be filled for each subcarrier based on the modulation scheme corresponding to each subcarrier; different modulation schemes correspond to different target bit numbers; sequentially reading the target number of bits from the first bit buffer queue according to the writing order, and mapping the read-out bit data to the corresponding subcarrier for modulation and transmission. This invention achieves efficient rate matching for data processing in bit-loading mode and data transmission without subcarriers crossing physical blocks.

The present invention discloses an acousto-optic modulator enhanced by a subwavelength acoustic waveguide, which relates to the field of integrated optical technology; the substrate comprises a sapphire substrate and a silicon dioxide layer arranged on the sapphire substrate, a lithium niobate film is arranged on the substrate, the lithium niobate film comprises an etched transduction region, a subwavelength acoustic waveguide, an acousto-photonic crystal cavity and a side-coupled photonic crystal; an interdigital transducer is arranged on the transduction region, the subwavelength acoustic waveguide is coupled to the transduction region through an etched conical transition region, the acousto-photonic crystal cavity is directly coupled to the subwavelength acoustic waveguide, and is coupled to the optical waveguide side. The present invention uses a non-suspended subwavelength acoustic waveguide to drive a suspended acousto-photonic crystal cavity, which can simultaneously excite a Love-like acoustic wave mode and a Rayleigh-like acoustic wave mode of a strongly bound state, significantly improving the modulation efficiency and conversion efficiency of the acousto-optic modulator. At the same time, the device has a simple preparation process and has broad application prospects in the field of signal processing.

The present application discloses an all-fiber electro-optic modulator and a preparation method, which relates to the field of optoelectronic devices. The all-fiber electro-optic modulator includes: a single-mode-tapered dual-mode-single-mode structure optical fiber, wherein the single-mode-tapered dual-mode-single-mode structure optical fiber is a single-mode-dual-mode-single-mode structure optical fiber whose dual-mode optical fiber region is tapered to a tapered dual-mode optical fiber; an ITO conductive glass electrode, wherein the ITO conductive glass is a top ITO conductive glass electrode and a bottom ITO conductive glass electrode; the ITO conductive glass electrode is used to connect an external modulation voltage; a polyimide gasket, wherein the polyimide gasket is fixed at both ends of the bottom ITO conductive glass; an organic electro-optic polymer film, wherein the organic electro-optic polymer film is spin-coated on the bottom ITO conductive glass, and the single-mode-tapered dual-mode-single-mode structure optical fiber is placed on the surface of the polarized organic electro-optic polymer film.

An electro-optic modulator (210), an optical module (201), and an optical transmitting device (110) are provided to reduce an optical loss in a process of modulating an optical signal and improve modulation efficiency when maintaining a high modulation bandwidth. The electro-optic modulator (210) includes a first electrode and a second electrode that are located on a surface of a base board. The electro-optic modulator (210) further includes a transmission optical waveguide (216). An electric field between the first electrode and the second electrode is used to modulate an optical signal transmitted by the transmission optical waveguide (216). The first electrode includes a first conducting layer (231) and a second conducting layer (232), and the second conducting layer (232) is located between the base board and the first conducting layer (231). An electrical conductivity of the first conducting layer (231) is greater than an electrical conductivity of the second conducting layer (232), and an optical-absorption coefficient of the first conducting layer (231) is greater than an optical-absorption coefficient of the second conducting layer (232).

The invention discloses a PWM (Pulse Width Modulation) method, electronic equipment and a storage medium. The method comprises the following steps: carrying out per-unit processing and anti-Clark transformation processing on a voltage under a two-phase static coordinate system to obtain a three-phase voltage; selecting at least one of a plurality of PWM modulation modes according to the three-phase voltage, and obtaining a zero sequence signal according to the selected PWM modulation mode; and determining the duty ratio of the control signal according to the three-phase voltage and the zero sequence signal. According to the technical scheme provided by the invention, a set of multiple PWM modulation modes can be realized, the most suitable modulation method is flexibly selected according to specific application requirements, and the modulation convenience is improved, so that the modulation efficiency is improved.

The invention relates to the technical field of silicon-based integrated photoelectronics, and particularly discloses a silicon-based electro-optical modulator with an enhanced modulation bandwidth and a manufacturing method of the silicon-based electro-optical modulator. According to the traveling wave electrode structure, the effective refractive index is reduced through the specific electrode width W and the specific electrode distance D, phase velocity matching of light waves and microwaves is achieved, and therefore the modulation efficiency and the bandwidth are improved; the ridge waveguide structure optimizes the overlapping degree of an optical mode and a microwave mode by adjusting the ridge height H and the width B, and carrier absorption loss is reduced; the electro-optical modulator adopts the periodically loaded coplanar waveguide traveling wave electrode, so that the refractive index is effectively reduced, phase velocity matching of light waves and microwaves is realized, and the modulation efficiency and the bandwidth are remarkably improved. Meanwhile, by introducing the ridge-shaped waveguide structure and accurately adjusting the size parameter of the ridge-shaped waveguide structure, the overlapping degree of an optical mode and a microwave mode is optimized, the carrier absorption loss is reduced, and the device performance is further improved.

The invention discloses a preparation method of a waveguide-integrated three-lamination graphene electro-optical modulator, which adopts a three-lamination graphene capacitor structure, enhances the interaction between graphene and light, and can improve the device modulation efficiency and reduce the insertion loss under the same device size. The first graphene layer and the third graphene layer adopt an interconnection design, and after the third graphene layer is transferred, residual water is removed by adopting a vacuum annealing process, so that the third graphene layer can be attached to the surfaces of the first graphene layer and the dielectric layer, a device control circuit is simplified, and device miniaturization is facilitated.

The application provides a service data transmission method, device, equipment and medium. In the method, after receiving a service data sending request, if it is judged that whether the modulation and coding strategy indication is allowed to be changed, it is indicated that the current node device can select the modulation and coding strategy, and then the target modulation and coding strategy level is determined according to the stored transmission information table, and the service data is sent according to the modulation and coding strategy corresponding to the target modulation and coding strategy level. According to the present application, the target modulation and coding strategy level is determined according to the transmission information table, and the service data is sent according to the modulation and coding strategy corresponding to the target modulation and coding strategy level, so that the current node device can send the service data at a faster modulation efficiency, and the modulation efficiency is effectively improved.

The embodiment of the invention provides an electro-optical modulator, a photon chip and a light quantum computer. The electro-optical modulator comprises a grounding electrode assembly and a signal electrode assembly. The ground electrode assembly includes a first ground electrode and a second ground electrode. The signal electrode assembly is located between the first ground electrode and the second ground electrode. The signal electrode assembly includes a positive signal electrode and a negative signal electrode. The signal electrode assembly is provided with the groove, equivalently, the current path of microwaves is prolonged, the distributed inductance of a transmission line is increased, the microwave speed is reduced, speed matching is more effectively achieved, the large distributed inductance is beneficial to increasing the characteristic impedance of the electrode, impedance matching is achieved, the reflection coefficient of radio-frequency signals is reduced, and the transmission efficiency of the radio-frequency signals is improved. Flat frequency response and higher effective driving voltage are obtained, and bandwidth and modulation efficiency are improved. The overall width of the signal electrode assembly does not change obviously, so that the transmission quality and stability of the system are ensured.

The embodiment of the present disclosure provides an electro-optical modulator and an optical quantum computer. The electro-optical modulator comprises an electrode assembly and an optical waveguide assembly. The electrode assembly comprises a positive signal electrode, a negative signal electrode, a first ground electrode and a second ground electrode, and the positive signal electrode and the negative signal electrode are arranged between the first ground electrode and the second ground electrode. The optical waveguide assembly is configured to carry an optical signal, and comprises a first optical waveguide and a second optical waveguide. The first optical waveguide is located between the positive signal electrode and the negative signal electrode and is used to carry a first optical signal. The second optical waveguide is located between the first ground electrode and the positive signal electrode or between the second ground electrode and the negative signal electrode and is used to carry a second optical signal. The application of equal-amplitude voltage signals with opposite phases to the closely coupled positive signal electrode and the negative signal electrode helps to improve the modulation efficiency and reduce common-mode noise.

The invention belongs to the technical field of integrated photoelectronics, and discloses a PN junction injection type silicon-based electro-optical modulator based on colloid nanocrystals and a preparation method of the PN junction injection type silicon-based electro-optical modulator. The silicon waveguide layer is arranged above the waveguide cladding layer; optical couplers for inputting and outputting optical signals are processed at the two ends of the silicon waveguide layer; the lower electrode layer is communicated with the silicon waveguide layer; the colloid nanocrystalline layer is prepared from oxide semiconductor colloid nanocrystalline and arranged above the silicon waveguide layer, and the colloid nanocrystalline layer and the silicon waveguide layer form a PN junction; and the upper electrode layer is arranged above the colloid nanocrystalline layer. The problems that an existing silicon-based electro-optical modulator is low in modulation efficiency, tedious in processing and difficult in heterogeneous integration are effectively solved, and the silicon-based electro-optical modulator has the advantages of solution preparation and processing substrate compatibility, large-scale integration, high modulation efficiency, high modulation depth, small size and the like, and is expected to promote development of a silicon-based optoelectronic chip towards the direction of high integration.

The invention relates to an integrated multiplexing multi-physics field acousto-optic intermodulation waveguide and a preparation method thereof. The multi-physics field acousto-optic intermodulation waveguide comprises the following steps: providing a support substrate; the dielectric layer is positioned on the supporting substrate; the piezoelectric film is positioned on the dielectric layer; the patterned metal structure is positioned on the piezoelectric film; etching the piezoelectric film so as to form a waveguide above the dielectric layer; etching the piezoelectric film so as to form a first grating coupler and a second grating coupler on the supporting substrate; the patterned metal structure comprises a first piezoelectric transducer, a second piezoelectric transducer, a first modulation electrode and a second modulation electrode; the first modulation electrode and the second modulation electrode are located on the two sides of the waveguide and are parallel to the waveguide. The sound field and the light field are limited to one waveguide, two physical fields are propagated and modulated at the same time, the information propagation density can be increased, and the modulation efficiency can be improved.