68 results about "Modulation efficiency" patented technology

According to the cluster sound absorption structure for realizing low-frequency broadband sound absorption through multi-resonance coupling, through the multi-resonance coupling among different resonance units in a resonance unit group, between the resonance unit group and a hole pipe embedded plate above and among different coupling resonance clusters, broadband sound absorption can be realized by using a small number of units, and the structure is lighter, thinner, more compact and more flexible. The sound absorption bandwidth is wider, and the sound absorption performance and the modulation efficiency are remarkably improved.

The invention discloses a micro-ring modulator with a large free spectral range and a design method of the micro-ring modulator, and belongs to the field of optoelectronic devices. A micro-ring resonant cavity corresponding to the micro-ring modulator comprises an annular waveguide, and the width of the annular waveguide is an optimized width value, so that the integral value of the group refractive index of an optical mode in the annular waveguide along a closed optical path of the annular waveguide is minimized, and meanwhile, the width is ensured to be smaller than a cut-off width supporting high-order optical mode propagation. Through the design of accurately regulating and controlling waveguide dispersion, the free spectral range of the device can be maximized on the premise of ensuring single-mode work. In addition, an asymmetric electro-optical modulation structure can be arranged on the annular waveguide so as to be matched with a distorted optical mode, and high modulation efficiency is guaranteed. The micro-ring device with ultra-large FSR, high bandwidth, high efficiency and compact size can be realized, and the micro-ring device has important application value in the field of high-density optical interconnection.

This invention relates to beam manipulation, providing a method and apparatus for generating randomly polarized beams, and pertains to the field of optical manipulation technology. The method includes generating a highly coherent linearly polarized beam using a continuous excitation light source unit; modulating the linearly polarized beam using a phase modulation unit to obtain a vortex beam with arbitrary topological charge; and modulating the vortex beam into a randomly polarized beam using a polarization modulation unit, wherein the response range of the random polarization can cover any point on the surface of a Poincaré sphere. The beam generation method provided by this invention can modulate a vortex beam carrying arbitrary topological charge into a beam with randomly varying polarization states, exhibiting high modulation efficiency, uniform polarization state distribution, and low cost, thus possessing significant practical value.

The invention discloses a dual-drive differential thin film barium titanate electro-optical modulator. Comprising a narrow linewidth laser, a first optical fiber waveguide coupling module, a second optical fiber waveguide coupling module, a first 1 * 2 optical beam splitter, a second 1 * 2 optical beam splitter, a first radio frequency module, a second radio frequency module, a GSGSG coplanar traveling wave electrode structure, a first waveguide and a second waveguide, wherein the GSGSG coplanar traveling wave electrode structure consists of a first ground electrode, a first signal electrode, a second ground electrode, a second signal electrode and a third ground electrode; the invention relates to an a-axis oriented barium titanate film and a substrate. After beam splitting, input laser is respectively injected into two parallel waveguides which are prepared on the barium titanate film and penetrate through the GSGSG structure. The first radio frequency module and the second radio frequency module apply composite modulation signals including direct current bias and differential radio frequency signals to the signal electrodes, so that the refractive indexes of the two waveguides have opposite sign changes to realize push-pull modulation, and modulated optical signals are output after beam combination. By means of the dual-drive differential and GSGSG electrode structure, the modulation efficiency is improved, and meanwhile the anti-interference capacity and stability of the device are remarkably improved.

The invention relates to the field of tungsten-based alloy target material preparation, in particular to a tungsten-based multi-component alloy target material containing a W3Ni17 specific phase and a preparation method, the target material contains the W3Ni17 specific phase and auxiliary phases such as a W phase and Ni3Ta phase, W powder and Ni powder serve as basic powder, and Cr / Ta / Si powder serves as optional auxiliary powder; the preparation method comprises the steps of multi-step segmented argon protection mixing according to a specific phase atomic ratio, alloying purification, cold isostatic pressing multi-section pressure relief forming, multi-section heating hydrogen protection sintering and the like. According to the design, the problems that a conventional target material cannot form a specific functional phase, elements are segregated, the density is insufficient, and light modulation efficiency and cycling stability are difficult to consider are solved, the density of the prepared target material is larger than or equal to 96%, the average crystal grain is smaller than or equal to 50 micrometers, the W3Ni17 phase accounts for 40%-85%, and the target material is suitable for preparation of a large-area electrochromic film and meets the requirements of the fields of energy-saving buildings, automobiles and the like.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a high-speed electro-optical modulator based on a heterogeneous integrated waveguide and a preparation method thereof, and belongs to the technical field of planar optical waveguide optical modulators and preparation thereof. The sensor is composed of a silicon substrate, a silicon dioxide oxide layer, a lead zirconate titanate flat plate layer, a polymer flat plate layer, a first grounding electrode, a signal electrode, a second grounding electrode and a polymer strip-shaped layer from bottom to top in sequence. The polymer strip-shaped layer and the polymer flat plate layer are made of the same material, and the refractive index of the polymer strip-shaped layer is lower than that of the lead zirconate titanate flat plate layer. The polymer flat plate layer prevents direct contact between lead zirconate titanate and the electrode, so that the loss of the modulator is greatly reduced. When an electric field is externally applied, the electric field is uniformly distributed between the signal electrode and the grounding electrode, and the thickness of the polymer flat plate layer and the size of the polymer strip-shaped layer are designed, so that more light fields are controlled in the lead zirconate titanate flat plate layer, and the electro-optical modulation efficiency is further improved. The manufacturing process is simplified, and the method has the advantages of low production cost, high efficiency and the like.

A plurality of optical waveguide structures are formed in a semiconductor layer of a semiconductor photonics device in a manner in which different physical dimensions and / or configurations can be realized for the optical waveguide structures. For example, the operations described herein enable strip waveguide structures and rib waveguide structures to be formed from the same semiconductor layer and in the same process flow. Additionally and / or alternatively, rib waveguide structures having different slab thicknesses, different ridge thicknesses, and / or different combinations of slab thicknesses and ridge thicknesses may be formed from the same semiconductor layer and in the same process flow. This enables the functions performed by the optical waveguide structures to be optimized to achieve low insertion loss in the semiconductor photonics device, to achieve a high modulation efficiency in the semiconductor photonics device, and / or to achieve lower power consumption in the semiconductor photonics device, among other examples.

The present disclosure provides an optical waveguide modulation device and an optical phase modulator. The optical waveguide modulation device comprises a substrate, an isolation layer arranged on the substrate, a ridge waveguide structure arranged on a side of the isolation layer away from the substrate, comprising a first slab layer arranged on a side of the isolation layer away from the substrate, and a ridge protrusion layer arranged on a side of the first slab layer away from the isolation layer, and a first metal layer arranged on a side of the isolation layer away from the substrate and located on both sides of the ridge waveguide structure, wherein the first metal layer extends to the side of the first slab layer away from the isolation layer towards the ridge waveguide structure to cover the two side edges of the first slab layer. The technical scheme of the embodiment of the present disclosure can reduce the electromagnetic field leakage on both sides of the first slab layer of the ridge waveguide structure, so that the electric field entering the ridge structure is more concentrated, thereby improving the modulation efficiency of the optical waveguide modulation device.

This invention relates to a lithium niobate electro-optic modulator, its fabrication method, and its application. The lithium niobate electro-optic modulator, from bottom to top, comprises a ground electrode, a substrate layer, a buried oxide layer, a lithium niobate waveguide, and a high-dielectric-constant cladding. Symmetrically distributed optical isolation trenches are arranged on both sides of the lithium niobate waveguide. The high-dielectric-constant cladding includes a first cladding and a second cladding from the inside out, wherein the dielectric constant of the first cladding is less than that of the second cladding. The number of high-dielectric-constant cladding layers is ≥2. The lithium niobate electro-optic modulator also includes a signal electrode embedded within the high-dielectric-constant cladding and located above the optical isolation trenches. The synergistic effect of the optical isolation trenches and the high-dielectric-constant cladding in this invention enables the lithium niobate electro-optic modulator to possess not only high modulation efficiency but also high bandwidth. Furthermore, the lithium niobate electro-optic modulator of this invention exhibits excellent power tolerance.

The application discloses a communication signal modulation method, device, equipment, medium and product, and the method comprises the following steps: sending a plurality of first bit training frames to a receiving end; receiving a measurement result obtained by the receiving end after rough channel measurement on each first bit training frame; when the measurement result meets a preset condition, sending a second bit training frame to the receiving end, receiving bit loading modulation information fed back by the receiving end after fine channel measurement on the second bit training frame, wherein the second bit training frame contains a pilot signal and a payload signal, the bit loading modulation information is obtained by performing channel estimation on the pilot signal and the payload signal respectively by the receiving end, and a plurality of signal-to-noise ratios are obtained based on the channel estimation; and modulating a communication signal of the sending end by using the bit loading modulation information to obtain a signal modulation result. The application can improve the modulation efficiency of the communication signal.

The application discloses an integrated tunable optical attenuator based on mode-circulating phase shift and reflection, comprising a single-mode optical waveguide, a 2*2 optical coupler, a high-order mode-circulating phase shifter and a waveguide optical reflector; wherein the 2*2 optical coupler is used for splitting the optical energy of the input port into two paths and outputting the optical energy into the high-order mode-circulating phase shifter, the high-order mode-circulating phase shifter uses the high-order mode selectivity of a mode coupler and the staggered arrangement of the mode order of a mode exchanger to make the optical field circulate in the high-order mode-circulating phase shifter for multiple times, thereby achieving the fold increase of the phase modulation efficiency; the waveguide optical reflector reversely couples the optical field modulated by the high-order mode-circulating phase shifter back to the high-order mode-circulating phase shifter, so that the optical field energy and information circulate in the high-order mode-circulating phase shifter for multiple times through the multimode optical phase shift arm, thereby further doubling the optical modulation efficiency.

The invention discloses a method for improving the efficiency of an electro-optical modulator and the electro-optical modulator, and belongs to the technical field of integrated photoelectronics. The method comprises the following steps: firstly, preparing a silicon optical device on an SOI wafer, and bonding the silicon optical device on a lithium niobate wafer in an inverted manner to serve as a new substrate; removing the original silicon substrate and thinning the buried oxide layer; and finally, bonding a lithium niobate film on the thinned surface and preparing a modulation structure. By replacing a high-loss silicon substrate with a low-loss lithium niobate substrate, a symmetrical medium environment is constructed, and the problems of large radio frequency loss and mismatch of microwave and light wave refractive indexes in the prior art are effectively solved. According to the method, the microwave loss is obviously reduced, the speed matching is realized, the modulation efficiency and the bandwidth of the modulator are greatly improved, meanwhile, the thermal stress matching is improved, and the device yield is improved.

The invention relates to the technical field of optical communication, and provides a bias uniform voltage division Mach-Zehnder modulator, which comprises an active modulation structure, and is characterized in that the active modulation structure is provided with an N-type layer and an electrode channel layer covering the N-type layer; the N-type layer comprises two N-type mesas which are arranged at an interval; the electrode channel layer comprises two covering sections covering the two N-type table tops respectively, and a connecting section connecting the two covering sections; an N-type electrode is arranged on the covering section, and the connecting section is connected with the two N-type table tops. The invention further provides a manufacturing method of the bias uniform partial voltage Mach-Zehnder modulator. According to the invention, the electrode channel layer is buried between the traditional N-type mesa and the DC electrodes, the two DC electrodes are connected, the electrode channel layer also covers the whole N-type layer, and an N-type strip resistor is short-circuited in an equivalent circuit, so that direct current bias is uniformly distributed in an N-type strip, the N-type strip resistor is prevented from influencing partial voltage of each active region, and the performance of the device is improved. Uniform pressure application to the N-type table top is realized, and the modulation efficiency is improved.

According to the acousto-optic modulator for realizing microwave photon conversion and the preparation method thereof provided by the invention, the runway type micro-ring is constructed on the piezoelectric film layer, the acoustic resonance frequency is accurately matched with the free spectral range of the runway type micro-ring structure, the cyclic generation of an optical modulation sideband is realized, the interaction between light waves and sound waves is greatly enhanced, and the optical modulation efficiency is improved. The acousto-optic coupling efficiency is remarkably improved, the power consumption of the device is greatly reduced, microwave photon conversion is achieved, the device is compact in overall structure and small in size, high-density on-chip integration is easy to achieve, further, periodic polarization is carried out on the interdigital electrodes, a cavity is formed under the piezoelectric film layer, and the photoelectric conversion efficiency of the device is improved. And the piezoelectric film layer is suspended, so that the working bandwidth of the device is further improved, and the requirement of high-speed information processing is met.

The invention relates to the technical field of metasurface electro-optical devices, in particular to a low-loss mid-infrared electro-optical modulator based on graphene and ITO and a preparation method thereof, SiO2, Al2O3, graphene, TiO2 and ITO are sequentially arranged in the electro-optical modulator from bottom to top, and Si is embedded in SiO2 to serve as a central waveguide. Single-layer graphene and ITO with the thickness of 30 nm are placed in a staggered mode to form a heterojunction, change of carriers in the Si waveguide is caused, and then modulation of the change of effective refraction in the Si waveguide is achieved; besides, the graphene and the ITO form a parallel-plate capacitor, the switching energy of the modulator is reduced, high modulation efficiency is achieved, and finally, metal electrodes are placed on the graphene and the ITO respectively, so that voltage directly controls heterojunction. According to experimental verification, a high extinction ratio is achieved under low insertion loss, and multi-rate modulation can be achieved.

The application discloses a large-format gray-scale image line-by-line rolling exposure method and system based on DLP projection and relates to the technical field of digital light processing additive manufacturing. The application aims at the problems of existing large-format splicing technology, such as forming defects, low gray-scale modulation efficiency of traditional line-by-line exposure, and strong binding between display line number and gray-scale output, maps and expands 8-bit original gray-scale values into 11-bit expanded gray-scale values through a gray-scale stretching algorithm of an upper computer, and decomposes the 11-bit expanded gray-scale values into bit plane data, combines DDR dynamic data scheduling and BLOCKRAM cache incremental update logic based on bit plane weight at an FPGA end, and realizes time domain cumulative exposure of pixel gray-scale values. The application can realize seamless printing of 256 gray scales under any effective display line number, greatly improves exposure efficiency, eliminates splicing defects, and improves system flexibility and stability.

This invention discloses a neuron-like optical switch based on a metal quantum well, comprising a substrate, and a dual-ring resonator and a metal quantum well located on the substrate. The dual-ring resonator includes a first straight waveguide, a first ring waveguide, a second straight waveguide, and a second ring waveguide. The first straight waveguide includes a first input terminal, and the second straight waveguide includes a second input terminal and an output terminal. The first straight waveguide is coupled to the first ring waveguide, and the first ring waveguide is coupled to the second ring waveguide. The metal quantum well is located between the second ring waveguide and the second straight waveguide. Incident light enters the first straight waveguide from the first input terminal, and after coupling, enters the first and second ring waveguides. Pump light enters the second straight waveguide from the second input terminal to irradiate the metal quantum well. By changing the intensity of the pump light, the refractive index of the metal quantum well is modulated, thereby modulating the intensity of the light output from the output terminal. This optical switch exhibits high optical modulation speed and modulation efficiency.

The invention relates to an optical fiber interferometer absolute displacement demodulation system and method based on gas absorption spectrum reference, and the system comprises a laser assembly which comprises a laser device and a first coupler; the detection light path assembly comprises a sensing head, an optical circulator and a first photoelectric detector, the sensing head is used for measuring displacement, the sensing head and the first photoelectric detector are both connected with the optical circulator, and the laser is connected with the optical circulator; the first reference light path assembly comprises a second photoelectric detector, and the laser is connected with the second photoelectric detector; the second reference light path assembly comprises a third photoelectric detector and a gas absorption cell, and the laser, the first coupler, the gas absorption cell and the third photoelectric detector are connected in sequence; and a data processing control assembly. According to the invention, the high-precision absolute displacement is measured remotely by using the optical fiber interferometer referenced by the gas absorption spectrum without being influenced by the wavelength stability, the wavelength modulation efficiency, the initialization phase difference and the like of the laser.

The invention discloses a non-resonant recyclable integrated acousto-optic modulator which has a high-order controllable mode light modulation capability. According to the device, a lithium niobate-chalcogenide glass heterogeneous layer is constructed based on a silicon-silicon dioxide substrate, and the device comprises a lithium niobate film and a heterogeneous integrated chalcogenide waveguide. A multi-mode light field is formed through waveguide conical transition, and coupling of an annular loop and a multi-mode waveguide is realized by means of an asymmetric directional coupler, so that high-order mode light circulates in a modulation area, and multi-time modulation is realized. According to the structure, the modulation efficiency can be improved and the required microwave power can be reduced through a high-order mode on the premise that the interaction length is not increased. The device is compact in structure, simple in process and suitable for the fields of optical communication, photon calculation, signal processing and the like.

The application discloses a high-side mode rejection ratio on-chip acousto-optic modulator, comprising: an insulating substrate and a lithium niobate substrate arranged on the insulating substrate, a chalcogenide optical waveguide is heterogeneously integrated on the lithium niobate substrate, and an interdigital transducer is arranged on the chalcogenide optical waveguide, the interdigital transducer comprises a plurality of even pairs of interdigital electrodes. The chalcogenide optical waveguide is a multimode RT runway type optical waveguide. The application combines the acousto-optic characteristics of the chalcogenide glass material and the piezoelectric effect of the lithium niobate thin film, utilizes the multimode waveguide structure of the micro-ring resonator, fully confines the surface acoustic wave and the optical wave energy excited by the interdigital transducer in the waveguide structure, and realizes the amplification of a single sideband and the suppression of other side modes under the phase matching condition of the sideband signal generated through the acousto-optic interaction in the micro-ring structure, thereby realizing the high-efficiency and high-suppression-ratio acousto-optic modulation. The high-side mode rejection ratio on-chip acousto-optic modulator has the characteristics of high modulation efficiency, low cost and easy realization of on-chip large-scale integration.

An electro-optical modulator facing a high-dielectric-constant ferroelectric film comprises a multimode interferometer, a ferroelectric film ridge waveguide, a transparent conductive film electrode and a metal electrode which are located on a substrate, the electro-optical modulator has the advantages that the electric field intensity in the waveguide is obviously enhanced by reducing the distance between the electrode and the waveguide; by optimizing the thickness of each thin film layer and the overall structure parameters, the microwave refractive index is reduced, and effective matching of microwave signals and optical signals is realized, so that the electro-optical modulation efficiency and the device bandwidth are greatly improved.

The invention provides an electrically adjustable acoustic interferometer and a sound wave amplitude modulation method, and the electrically adjustable acoustic interferometer comprises a piezoelectric film which is provided with at least one acoustic wave guide arm; the at least one modulation electrode assembly is arranged in the area of the acoustic waveguide arm and comprises an upper electrode and a lower electrode, and the upper electrode and the lower electrode are arranged on the two sides of the piezoelectric film and used for applying an independent direct-current bias electric field to the acoustic waveguide arm. The electrically adjustable acoustic interference device with high modulation efficiency, ultra-low power consumption, broadband response and high integration level is constructed, and a key device basis is provided for a next-generation reconfigurable radio frequency front end, acoustic neuromorphic calculation, an on-chip analog signal processor and an intelligent sensing system.

The application belongs to the technical field of spectral ellipsometry devices and methods, and particularly relates to a spectral ellipsometry accurate measurement device and method based on a single photoelastic modulator, wherein a polarizer, a photoelastic modulator and a measured sample are sequentially arranged in the light path direction of the monochromator, and a polarizer and a detector are sequentially arranged in the reflection light path of the measured sample. By scanning the single photoelastic modulator and the wide-band monochromatic light of the monochromator, and by combining the phase-locked amplification of the multiple frequency signals of the modulated photoelectric signals, the signal noise ratio is improved, the fluctuation of the modulation phase amplitude of the photoelastic modulator is obtained in real time by combining the theoretical calculation of the amplitude of the multiple frequency signals, the problem of the unstable phase delay amplitude of the photoelastic modulator caused by long-time work and environmental influence is solved, and the driving voltage of the photoelastic modulator can be adjusted in real time according to the different output wavelengths of the monochromator, so as to ensure the optimal modulation efficiency.

The invention provides a Mach-Zehnder modulator based on a silicon carbide substrate and a preparation method of the Mach-Zehnder modulator. An isolation layer, a waveguide material layer, a Mach-Zehnder structure, a distributed traveling wave electrode and an upper cladding are sequentially formed on the silicon carbide substrate; by utilizing the characteristics that the silicon carbide substrate has low dielectric loss and a dielectric constant capable of being matched with the optical group refractive index in a high-frequency band and optimizing parameters of the distributed traveling wave electrode, the loss of a microwave signal in transmission can be remarkably reduced, and accurate matching of the microwave phase refractive index and the optical group refractive index can be realized; in addition, the heat conductivity coefficient of the silicon carbide substrate is far higher than that of a substrate material such as silicon, so that heat generated by working of a device can be effectively dissipated, interference of a heat effect on modulation performance is avoided, and further, the modulation bandwidth and the modulation efficiency of the Mach-Zehnder modulator are improved. According to the preparation process, the process stability and repeatability are remarkably improved, and feasibility is provided for large-scale integrated manufacturing of devices.

The invention discloses a DMD-based pistol-type three-wavelength laser water quality detection optical instrument which is characterized in that an X prism is arranged on an integrated module at the front end of a water quality detection optical instrument body, and a 420 blue-violet laser, a 280 ultraviolet laser, a 680 red laser and a bonding lens shaping module are respectively arranged on the periphery of the X prism in the horizontal direction; a micro sample pool and a TIR steering prism are arranged on one side of the balsaming lens shaping module, a focusing coupling module, a receiver, an embedded control module and a power supply module are arranged under the TIR steering prism, the water quality detection optical instrument body can detect various water quality parameters such as COD, turbidity and nitrate at the same time, the field operation convenience is greatly improved, and the water quality detection optical instrument can be applied to water quality detection. The device adapts to the rapid detection requirement of emergency monitoring, is combined with a temperature compensation algorithm, ensures that the detection precision meets the field detection requirement, solves the problems of low divergent beam combination efficiency and poor coaxiality in a traditional optical instrument, effectively improves the utilization rate of weak attenuation optical signals, and improves the modulation efficiency and the detection precision.

An electroabsorption modulation laser (EML) device features a deployed modulator to improve the modulation efficiency and the steepness of the transmission curve. The EML device typically includes a laser segment, such as a distributed feedback (DFB) laser segment, an electroabsorption modulator (EAM) segment, and an isolation segment between the laser segment and the EAM segment. The EML device also includes an active region containing quantum well structures located within the laser segment and the EAM segment. The mesa segment spans the laser segment, the isolation segment, and the EAM segment and is deployed, such that at least a portion of the isolation mesa segment narrows outwards, and at least a portion of the modulator mesa segment narrows inwards. The EML device can be a ridge waveguide (RWG) type EML device or a buried heterostructure (BH) type EML device.

The application discloses a wideband and high-efficiency acousto-optic modulator in a shear wave mode and a preparation method thereof, and relates to the technical field of integrated optics. The acousto-optic modulator comprises, from bottom to top, a silicon substrate, a silicon dioxide layer and a lithium niobate-chalcogenide glass hetero layer. The lithium niobate-chalcogenide glass hetero layer comprises a lithium niobate thin film, a chalcogenide optical waveguide, an interdigital transducer and a reflection grating which are hetero-integrated on the lithium niobate thin film. The reflection gratings are symmetrically arranged about the interdigital transducer, and an oblique included angle is formed between the interdigital transducer and the chalcogenide optical waveguide. The acousto-optic modulator comprehensively utilizes the excellent acousto-optic characteristics of chalcogenide glass materials, the outstanding piezoelectric effect of the lithium niobate thin film and the oblique included angle arrangement of the interdigital transducer relative to the optical waveguide. The mechanical deformation of the horizontal shear wave in the acoustic aperture direction is fully utilized, the reflection grating is used for the enhancement of the acoustic wave, the Q value of the acoustic wave resonant cavity is improved, the modulation bandwidth is improved, and the problem of low acousto-optic modulation efficiency is solved.

To prevent a decrease in magnetic anisotropy modulation efficiency while improving crystallinity of a magnetic layer in a magnetic memory element. A magnetic memory element includes a storage layer having a variable magnetization direction and a voltage-controlled magnetic anisotropy effect, a reference layer having an invariable magnetization direction, a tunnel barrier layer disposed between the storage layer and the reference layer, and an underlayer disposed below the storage layer. The storage layer included in the magnetic memory element is configured to have a B content of 10 at % or less. The underlayer included in the magnetic memory element is configured to have an orientation different from that of the tunnel barrier layer or to be in an amorphous state.

An optical waveguide modulation device (10) and an optical phase modulator comprising the optical waveguide modulation device (10). The optical waveguide modulation device (10) comprises: a substrate (20); an isolation layer (30) arranged on the substrate (20); a ridge waveguide structure (40) arranged on the side of the isolation layer (30) facing away from the substrate (20); and a first metal layer (50) arranged on the side of the isolation layer (30) facing away from the substrate (20) and located on two sides of the ridge waveguide structure (40). The ridge waveguide structure (40) comprises: a first slab layer (41) arranged on the side of the isolation layer (30) facing away from the substrate (20); and a ridge layer (42) arranged on the side of the first slab layer (41) facing away from the isolation layer (30). The first metal layer (50) extends towards the ridge waveguide structure (40) to the side of the first slab layer (41) facing away from the isolation layer (30), so as to cover the edges of two sides of the first slab layer (41), thereby reducing the electromagnetic field leakage on the two sides of the first slab layer (41) of the ridge waveguide structure (40), making an electric field entering the ridge waveguide structure (40) more concentrated, and thus improving the modulation efficiency of the optical waveguide modulation device (10).