117 results about "Modulation efficiency" patented technology

The embodiment of the invention provides an electro-optical modulator and a light quantum computer. The electro-optical modulator comprises an electrode assembly and an optical waveguide assembly. The electrode assembly comprises a positive signal electrode, a negative signal electrode, a first grounding electrode and a second grounding electrode, and the positive signal electrode and the negative signal electrode are arranged between the first grounding electrode and the second grounding electrode. The optical waveguide assembly is configured to bear optical signals and comprises a first optical waveguide and a second optical waveguide, the first optical waveguide is located between the positive signal electrode and the negative signal electrode and used for bearing first optical signals, and the second optical waveguide is located between the first grounding electrode and the positive signal electrode or between the second grounding electrode and the negative signal electrode and used for bearing second optical signals. The carrier is used for bearing second optical signals. Constant-amplitude voltage signals with opposite phases are applied to the positive signal electrode and the negative signal electrode which are tightly coupled, so that the modulation efficiency can be improved, and the common-mode noise can be reduced.

The invention discloses a multi-channel runway micro-ring modulator capable of adjusting coupling efficiency, and the modulator comprises a runway micro-ring resonant cavity which comprises a straight waveguide section and a bent section and is used for achieving the resonance of an optical signal; the Mach-Zehnder modulation structure is integrated with the micro-ring resonant cavity and is used for adjusting the equivalent coupling coefficient of the micro-ring and the main waveguide; wherein the Mach-Zehnder modulation structure comprises a coupler, a mode converter and a modulation arm. And the modulator is also provided with a heater. According to the scheme, the coupling coefficient of the micro-ring resonant cavity and the main waveguide is adjusted through the Mach-Zehnder modulation structure, the limitation of the photon lifetime of the micro-ring resonant cavity on the modulation rate is overcome, and the restrictive relationship between the bandwidth and the modulation efficiency is broken. Compared with an existing micro-ring modulator, the micro-ring modulator can still have the high-speed modulation capacity in a high-quality-factor micro-ring resonant cavity. Meanwhile, through the design of the waveguide in the Mach-Zehnder interference region, the length of the modulation region is increased while the area of the device is not increased.

According to the cluster sound absorption structure for realizing low-frequency broadband sound absorption through multi-resonance coupling, through the multi-resonance coupling among different resonance units in a resonance unit group, between the resonance unit group and a hole pipe embedded plate above and among different coupling resonance clusters, broadband sound absorption can be realized by using a small number of units, and the structure is lighter, thinner, more compact and more flexible. The sound absorption bandwidth is wider, and the sound absorption performance and the modulation efficiency are remarkably improved.

The invention discloses a micro-ring modulator with a large free spectral range and a design method of the micro-ring modulator, and belongs to the field of optoelectronic devices. A micro-ring resonant cavity corresponding to the micro-ring modulator comprises an annular waveguide, and the width of the annular waveguide is an optimized width value, so that the integral value of the group refractive index of an optical mode in the annular waveguide along a closed optical path of the annular waveguide is minimized, and meanwhile, the width is ensured to be smaller than a cut-off width supporting high-order optical mode propagation. Through the design of accurately regulating and controlling waveguide dispersion, the free spectral range of the device can be maximized on the premise of ensuring single-mode work. In addition, an asymmetric electro-optical modulation structure can be arranged on the annular waveguide so as to be matched with a distorted optical mode, and high modulation efficiency is guaranteed. The micro-ring device with ultra-large FSR, high bandwidth, high efficiency and compact size can be realized, and the micro-ring device has important application value in the field of high-density optical interconnection.

This invention relates to beam manipulation, providing a method and apparatus for generating randomly polarized beams, and pertains to the field of optical manipulation technology. The method includes generating a highly coherent linearly polarized beam using a continuous excitation light source unit; modulating the linearly polarized beam using a phase modulation unit to obtain a vortex beam with arbitrary topological charge; and modulating the vortex beam into a randomly polarized beam using a polarization modulation unit, wherein the response range of the random polarization can cover any point on the surface of a Poincaré sphere. The beam generation method provided by this invention can modulate a vortex beam carrying arbitrary topological charge into a beam with randomly varying polarization states, exhibiting high modulation efficiency, uniform polarization state distribution, and low cost, thus possessing significant practical value.

The invention discloses a dual-drive differential thin film barium titanate electro-optical modulator. Comprising a narrow linewidth laser, a first optical fiber waveguide coupling module, a second optical fiber waveguide coupling module, a first 1 * 2 optical beam splitter, a second 1 * 2 optical beam splitter, a first radio frequency module, a second radio frequency module, a GSGSG coplanar traveling wave electrode structure, a first waveguide and a second waveguide, wherein the GSGSG coplanar traveling wave electrode structure consists of a first ground electrode, a first signal electrode, a second ground electrode, a second signal electrode and a third ground electrode; the invention relates to an a-axis oriented barium titanate film and a substrate. After beam splitting, input laser is respectively injected into two parallel waveguides which are prepared on the barium titanate film and penetrate through the GSGSG structure. The first radio frequency module and the second radio frequency module apply composite modulation signals including direct current bias and differential radio frequency signals to the signal electrodes, so that the refractive indexes of the two waveguides have opposite sign changes to realize push-pull modulation, and modulated optical signals are output after beam combination. By means of the dual-drive differential and GSGSG electrode structure, the modulation efficiency is improved, and meanwhile the anti-interference capacity and stability of the device are remarkably improved.

The application provides a high-speed polarization encoding device, method and quantum communication system, the device comprising: a polarization beam splitter, a transmission light path, a first phase modulator and a first high-speed driver; the first high-speed driver is connected with the first phase modulator, and is used for applying a high-frequency modulation signal with a frequency higher than a specified threshold to the first phase modulator; the polarization beam splitter receives an optical pulse through a first port, and splits the optical pulse into a first sub-optical pulse and a second sub-optical pulse; the first phase modulator is used for phase modulating the first sub-optical pulse and the second sub-optical pulse with different modulation efficiencies based on the high-frequency modulation signal; and the polarization beam splitter is further used for combining the first sub-optical pulse and the second sub-optical pulse after phase modulation by the first phase modulator, and outputting the obtained combined optical pulse through the first port. In this way, the purpose of high-stable polarization quantum state encoding of 10GHz or higher speed is achieved.

The invention provides a slow wave structure, a terahertz traveling wave tube device and a communication device. According to the slow wave structure provided by the invention, the first sub slow wave structure and the second sub slow wave structure are ingeniously combined, so that the technical problem of insufficient output power in the prior art can be effectively solved. Specifically, the first sub-slow-wave structure performs cluster modulation on the electron beam through preset strong coupling impedance, so that the density and the modulation efficiency of the electron beam are improved; and the second slow wave sub-structure ensures that the electron beams subjected to cluster modulation can efficiently export microwave energy through the design of low transmission loss, so that the energy loss is obviously reduced. Through the innovative structural design, higher output power can be provided at a high frequency band, attenuation of microwave signals is effectively reduced, the overall performance of the system is improved, and the application requirements of high power and high efficiency are met.

The application provides a laser chip with a modulator, a preparation method and an optical module, and comprises an N electrode layer, an N-type semiconductor material layer, an active layer, an upper waveguide layer and a P-type semiconductor material layer; further comprising: a first ridge waveguide groove penetrating through the N-type semiconductor material layer; a second ridge waveguide groove penetrating through the N-type semiconductor material layer, and a ridge waveguide is arranged between the first ridge waveguide groove and the second ridge waveguide groove; a first passivation layer covering the P-type semiconductor material layer on one side of the ridge waveguide and arranged above the first ridge waveguide groove; a second passivation layer covering the P-type semiconductor material layer on the other side of the ridge waveguide and arranged above the second ridge waveguide groove; a first P electrode layer arranged on the second passivation layer above the P-type semiconductor material layer; a second P electrode layer arranged on the ridge waveguide; and a suspended electrode suspendedly arranged on the second ridge waveguide groove and electrically connected with the first P electrode layer and the second P electrode layer. The high-speed performance and the optimization of modulation efficiency are combined.

The invention relates to the field of tungsten-based alloy target material preparation, in particular to a tungsten-based multi-component alloy target material containing a W3Ni17 specific phase and a preparation method, the target material contains the W3Ni17 specific phase and auxiliary phases such as a W phase and Ni3Ta phase, W powder and Ni powder serve as basic powder, and Cr / Ta / Si powder serves as optional auxiliary powder; the preparation method comprises the steps of multi-step segmented argon protection mixing according to a specific phase atomic ratio, alloying purification, cold isostatic pressing multi-section pressure relief forming, multi-section heating hydrogen protection sintering and the like. According to the design, the problems that a conventional target material cannot form a specific functional phase, elements are segregated, the density is insufficient, and light modulation efficiency and cycling stability are difficult to consider are solved, the density of the prepared target material is larger than or equal to 96%, the average crystal grain is smaller than or equal to 50 micrometers, the W3Ni17 phase accounts for 40%-85%, and the target material is suitable for preparation of a large-area electrochromic film and meets the requirements of the fields of energy-saving buildings, automobiles and the like.

The invention relates to a terahertz modulator based on change and BIC mode switching and a mode switching method thereof. The modulator comprises a silicon substrate, a metasurface and a VO2 patch. The silicon substrate provides structural support; the metasurface is arranged on the surface of the silicon substrate, is composed of a pair of metal split resonance notch rings in mirror symmetry, and can excite a anapore mode by forming a closed surface current loop, excite an A-BIC mode by structure parameter tuning, and excite an S-BIC mode by maintaining mirror symmetry. The VO2 patch is embedded into the gap of the gap on the surface of the metasurface, the conductivity is regulated and controlled by means of temperature so as to change the current distribution on the surface of the metasurface, and dynamic switching between a BIC mode and an apole mode is achieved. According to the invention, through excitation of non-radiation mode modulation, metal ohmic loss is avoided, the maximum modulation depth reaches 80% when the A-BIC is switched to the apole mode, and the modulation efficiency is significantly improved.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a high-speed electro-optical modulator based on a heterogeneous integrated waveguide and a preparation method thereof, and belongs to the technical field of planar optical waveguide optical modulators and preparation thereof. The sensor is composed of a silicon substrate, a silicon dioxide oxide layer, a lead zirconate titanate flat plate layer, a polymer flat plate layer, a first grounding electrode, a signal electrode, a second grounding electrode and a polymer strip-shaped layer from bottom to top in sequence. The polymer strip-shaped layer and the polymer flat plate layer are made of the same material, and the refractive index of the polymer strip-shaped layer is lower than that of the lead zirconate titanate flat plate layer. The polymer flat plate layer prevents direct contact between lead zirconate titanate and the electrode, so that the loss of the modulator is greatly reduced. When an electric field is externally applied, the electric field is uniformly distributed between the signal electrode and the grounding electrode, and the thickness of the polymer flat plate layer and the size of the polymer strip-shaped layer are designed, so that more light fields are controlled in the lead zirconate titanate flat plate layer, and the electro-optical modulation efficiency is further improved. The manufacturing process is simplified, and the method has the advantages of low production cost, high efficiency and the like.

This invention discloses a method for oxygen vacancy control in Ga2O3 thin films based on vertical electric field modulation, belonging to the field of photoelectric conversion semiconductor materials. The method includes: 1) Ga2O3 thin film and device fabrication, 2) ionic liquid droplet addition, and 3) application of a vertical electric field for modulation. This invention achieves oxygen vacancy position modulation in Ga2O3 thin films through the action of a strong electric field, deepening the controllability of the photoelectric conversion performance of Ga2O3 thin films and demonstrating new possibilities for the construction and application of Ga2O3 thin film photodetectors. This invention not only provides a new approach and direction for solving the current difficulties of low response frequency and high static power consumption in Ga2O3 thin films, but also offers strong controllability, high modulation efficiency, and quantifiability, making it highly applicable.

A plurality of optical waveguide structures are formed in a semiconductor layer of a semiconductor photonics device in a manner in which different physical dimensions and / or configurations can be realized for the optical waveguide structures. For example, the operations described herein enable strip waveguide structures and rib waveguide structures to be formed from the same semiconductor layer and in the same process flow. Additionally and / or alternatively, rib waveguide structures having different slab thicknesses, different ridge thicknesses, and / or different combinations of slab thicknesses and ridge thicknesses may be formed from the same semiconductor layer and in the same process flow. This enables the functions performed by the optical waveguide structures to be optimized to achieve low insertion loss in the semiconductor photonics device, to achieve a high modulation efficiency in the semiconductor photonics device, and / or to achieve lower power consumption in the semiconductor photonics device, among other examples.

The present disclosure provides an optical waveguide modulation device and an optical phase modulator. The optical waveguide modulation device comprises a substrate, an isolation layer arranged on the substrate, a ridge waveguide structure arranged on a side of the isolation layer away from the substrate, comprising a first slab layer arranged on a side of the isolation layer away from the substrate, and a ridge protrusion layer arranged on a side of the first slab layer away from the isolation layer, and a first metal layer arranged on a side of the isolation layer away from the substrate and located on both sides of the ridge waveguide structure, wherein the first metal layer extends to the side of the first slab layer away from the isolation layer towards the ridge waveguide structure to cover the two side edges of the first slab layer. The technical scheme of the embodiment of the present disclosure can reduce the electromagnetic field leakage on both sides of the first slab layer of the ridge waveguide structure, so that the electric field entering the ridge structure is more concentrated, thereby improving the modulation efficiency of the optical waveguide modulation device.

The application provides an SVPWM implementation method based on a sorting method, which is used for implementing an inverter SVPWM, and is characterized in that: a sorting algorithm is used as a core to synthesize a modulation signal; firstly, the action time distribution of three-way switches in a current sector is calculated, and the action time length is sorted in descending order; secondly, according to the space vector variation law, the sorting of the action time length of the three-way switches in the current sector is calculated; then, the on-off of the switches corresponding to the action time is controlled according to the action time, so that the SVPWM signal synthesis in the current sector is realized. The application changes the algorithm core on the basis of the existing SVPWM implementation algorithm, uses the sorting method, simplifies the calculation mode of the on-off action time of the switches, reduces the calculation amount, is easier to realize digital control, and can improve the SVPWM modulation efficiency.

This invention relates to a lithium niobate electro-optic modulator, its fabrication method, and its application. The lithium niobate electro-optic modulator, from bottom to top, comprises a ground electrode, a substrate layer, a buried oxide layer, a lithium niobate waveguide, and a high-dielectric-constant cladding. Symmetrically distributed optical isolation trenches are arranged on both sides of the lithium niobate waveguide. The high-dielectric-constant cladding includes a first cladding and a second cladding from the inside out, wherein the dielectric constant of the first cladding is less than that of the second cladding. The number of high-dielectric-constant cladding layers is ≥2. The lithium niobate electro-optic modulator also includes a signal electrode embedded within the high-dielectric-constant cladding and located above the optical isolation trenches. The synergistic effect of the optical isolation trenches and the high-dielectric-constant cladding in this invention enables the lithium niobate electro-optic modulator to possess not only high modulation efficiency but also high bandwidth. Furthermore, the lithium niobate electro-optic modulator of this invention exhibits excellent power tolerance.

The application discloses a communication signal modulation method, device, equipment, medium and product, and the method comprises the following steps: sending a plurality of first bit training frames to a receiving end; receiving a measurement result obtained by the receiving end after rough channel measurement on each first bit training frame; when the measurement result meets a preset condition, sending a second bit training frame to the receiving end, receiving bit loading modulation information fed back by the receiving end after fine channel measurement on the second bit training frame, wherein the second bit training frame contains a pilot signal and a payload signal, the bit loading modulation information is obtained by performing channel estimation on the pilot signal and the payload signal respectively by the receiving end, and a plurality of signal-to-noise ratios are obtained based on the channel estimation; and modulating a communication signal of the sending end by using the bit loading modulation information to obtain a signal modulation result. The application can improve the modulation efficiency of the communication signal.

The application discloses an integrated tunable optical attenuator based on mode-circulating phase shift and reflection, comprising a single-mode optical waveguide, a 2*2 optical coupler, a high-order mode-circulating phase shifter and a waveguide optical reflector; wherein the 2*2 optical coupler is used for splitting the optical energy of the input port into two paths and outputting the optical energy into the high-order mode-circulating phase shifter, the high-order mode-circulating phase shifter uses the high-order mode selectivity of a mode coupler and the staggered arrangement of the mode order of a mode exchanger to make the optical field circulate in the high-order mode-circulating phase shifter for multiple times, thereby achieving the fold increase of the phase modulation efficiency; the waveguide optical reflector reversely couples the optical field modulated by the high-order mode-circulating phase shifter back to the high-order mode-circulating phase shifter, so that the optical field energy and information circulate in the high-order mode-circulating phase shifter for multiple times through the multimode optical phase shift arm, thereby further doubling the optical modulation efficiency.

The invention discloses a method for improving the efficiency of an electro-optical modulator and the electro-optical modulator, and belongs to the technical field of integrated photoelectronics. The method comprises the following steps: firstly, preparing a silicon optical device on an SOI wafer, and bonding the silicon optical device on a lithium niobate wafer in an inverted manner to serve as a new substrate; removing the original silicon substrate and thinning the buried oxide layer; and finally, bonding a lithium niobate film on the thinned surface and preparing a modulation structure. By replacing a high-loss silicon substrate with a low-loss lithium niobate substrate, a symmetrical medium environment is constructed, and the problems of large radio frequency loss and mismatch of microwave and light wave refractive indexes in the prior art are effectively solved. According to the method, the microwave loss is obviously reduced, the speed matching is realized, the modulation efficiency and the bandwidth of the modulator are greatly improved, meanwhile, the thermal stress matching is improved, and the device yield is improved.

The invention relates to the technical field of optical communication, and provides a bias uniform voltage division Mach-Zehnder modulator, which comprises an active modulation structure, and is characterized in that the active modulation structure is provided with an N-type layer and an electrode channel layer covering the N-type layer; the N-type layer comprises two N-type mesas which are arranged at an interval; the electrode channel layer comprises two covering sections covering the two N-type table tops respectively, and a connecting section connecting the two covering sections; an N-type electrode is arranged on the covering section, and the connecting section is connected with the two N-type table tops. The invention further provides a manufacturing method of the bias uniform partial voltage Mach-Zehnder modulator. According to the invention, the electrode channel layer is buried between the traditional N-type mesa and the DC electrodes, the two DC electrodes are connected, the electrode channel layer also covers the whole N-type layer, and an N-type strip resistor is short-circuited in an equivalent circuit, so that direct current bias is uniformly distributed in an N-type strip, the N-type strip resistor is prevented from influencing partial voltage of each active region, and the performance of the device is improved. Uniform pressure application to the N-type table top is realized, and the modulation efficiency is improved.

The invention relates to the field of integrated optics, and particularly provides an array waveguide grating, and the array waveguide grating comprises a first array waveguide which comprises a group of first transmission waveguides which are arranged at intervals, and each first transmission waveguide comprises a first sub-waveguide and a second sub-waveguide which are arranged at intervals in a signal transmission direction; the second array waveguide comprises a group of second transmission waveguides which are arranged at intervals, the first transmission waveguides and the second transmission waveguides are arranged in a one-to-one correspondence manner, and the thermo-optical coefficient of the second transmission waveguides is greater than that of the first transmission waveguides; the phase shifter array comprises a plurality of phase shifters, and the phase shifters and the second transmission waveguides are arranged in a one-to-one correspondence mode; optical signals are coupled and transmitted to the corresponding second transmission waveguides through the first sub-waveguides, phase modulation is carried out on the optical signals through the phase shifters, and the optical signals subjected to phase modulation are coupled and transmitted to the corresponding second sub-waveguides. The scheme can effectively reduce the insertion loss of the transmission waveguide and effectively improve the modulation efficiency.

According to the acousto-optic modulator for realizing microwave photon conversion and the preparation method thereof provided by the invention, the runway type micro-ring is constructed on the piezoelectric film layer, the acoustic resonance frequency is accurately matched with the free spectral range of the runway type micro-ring structure, the cyclic generation of an optical modulation sideband is realized, the interaction between light waves and sound waves is greatly enhanced, and the optical modulation efficiency is improved. The acousto-optic coupling efficiency is remarkably improved, the power consumption of the device is greatly reduced, microwave photon conversion is achieved, the device is compact in overall structure and small in size, high-density on-chip integration is easy to achieve, further, periodic polarization is carried out on the interdigital electrodes, a cavity is formed under the piezoelectric film layer, and the photoelectric conversion efficiency of the device is improved. And the piezoelectric film layer is suspended, so that the working bandwidth of the device is further improved, and the requirement of high-speed information processing is met.

The invention relates to the technical field of metasurface electro-optical devices, in particular to a low-loss mid-infrared electro-optical modulator based on graphene and ITO and a preparation method thereof, SiO2, Al2O3, graphene, TiO2 and ITO are sequentially arranged in the electro-optical modulator from bottom to top, and Si is embedded in SiO2 to serve as a central waveguide. Single-layer graphene and ITO with the thickness of 30 nm are placed in a staggered mode to form a heterojunction, change of carriers in the Si waveguide is caused, and then modulation of the change of effective refraction in the Si waveguide is achieved; besides, the graphene and the ITO form a parallel-plate capacitor, the switching energy of the modulator is reduced, high modulation efficiency is achieved, and finally, metal electrodes are placed on the graphene and the ITO respectively, so that voltage directly controls heterojunction. According to experimental verification, a high extinction ratio is achieved under low insertion loss, and multi-rate modulation can be achieved.

The application discloses a large-format gray-scale image line-by-line rolling exposure method and system based on DLP projection and relates to the technical field of digital light processing additive manufacturing. The application aims at the problems of existing large-format splicing technology, such as forming defects, low gray-scale modulation efficiency of traditional line-by-line exposure, and strong binding between display line number and gray-scale output, maps and expands 8-bit original gray-scale values into 11-bit expanded gray-scale values through a gray-scale stretching algorithm of an upper computer, and decomposes the 11-bit expanded gray-scale values into bit plane data, combines DDR dynamic data scheduling and BLOCKRAM cache incremental update logic based on bit plane weight at an FPGA end, and realizes time domain cumulative exposure of pixel gray-scale values. The application can realize seamless printing of 256 gray scales under any effective display line number, greatly improves exposure efficiency, eliminates splicing defects, and improves system flexibility and stability.

The present invention discloses a silicon optical modulator, comprising a silicon substrate, an insulating oxide layer, a top silicon waveguide modulation region, and a top covering oxide layer stacked in sequence, wherein the top silicon waveguide modulation region comprises an n-type heavily doped region, an n-type main doped region, a p-type main doped region, and a p-type heavily doped region in sequence along a first direction. The present invention also discloses a compensation doping method for a silicon optical modulator. Advantageously, by compensating the doping of the flat plate region by oblique ion implantation, the effects of improving the bandwidth and modulation efficiency of the silicon optical modulator can be achieved simultaneously. Moreover, compared with the single bandwidth optimization scheme and the single efficiency optimization scheme of this type of silicon optical modulator, the additional insertion loss introduced by this method does not increase significantly.

The application discloses an aluminum nitride waveguide structure based on nitride layered coating and a preparation method thereof, and mainly solves the problem of poor long-term working stability of an electro-optical modulator caused by oxygen permeation in the prior art. The scheme comprises the following steps: designing a waveguide modulation area composed of a top electrode, two bottom electrodes, a nitride coated waveguide structure, an oxide cover layer and an oxide buried layer on a silicon substrate; wherein the nitride coated waveguide structure is located on the upper surface of the buried layer, the cover layer covers the waveguide structure; the top electrode is located directly above the waveguide structure and is in close contact with the upper surface of the cover layer; and the two bottom electrodes are respectively located on the left and right sides of the waveguide. The application realizes basic protection by preparing a base nitride layer, and realizes full-wrapping oxygen barrier on the top of the waveguide functional layer, so as to isolate the pollution of oxygen elements to the material; the performance degradation phenomenon of an electro-optical modulator based on an AlN waveguide and other optoelectronic devices can be avoided, and the electro-optical modulation efficiency and reliability of the device are effectively improved.

The application provides a high-speed intensity modulation device, method and quantum communication system. The device comprises an optical coupler, a transmission light path, a first phase modulator and a first high-speed driver. The first high-speed driver is connected with the first phase modulator and used for applying a high-frequency modulation signal with a frequency higher than a specified threshold to the first phase modulator. The optical coupler receives an optical pulse through an input port, splits the optical pulse into a first sub-optical pulse and a second sub-optical pulse. The first phase modulator is used for phase modulating the first sub-optical pulse and the second sub-optical pulse with different modulation efficiencies based on the high-frequency modulation signal. The optical coupler is further used for combining the first sub-optical pulse and the second sub-optical pulse after the first phase modulator, obtaining a combined optical pulse and outputting the combined optical pulse through an output port. In this way, the purpose of high-stable intensity modulation of a quantum light source with a speed of 10GHz or more is achieved.

This invention discloses a neuron-like optical switch based on a metal quantum well, comprising a substrate, and a dual-ring resonator and a metal quantum well located on the substrate. The dual-ring resonator includes a first straight waveguide, a first ring waveguide, a second straight waveguide, and a second ring waveguide. The first straight waveguide includes a first input terminal, and the second straight waveguide includes a second input terminal and an output terminal. The first straight waveguide is coupled to the first ring waveguide, and the first ring waveguide is coupled to the second ring waveguide. The metal quantum well is located between the second ring waveguide and the second straight waveguide. Incident light enters the first straight waveguide from the first input terminal, and after coupling, enters the first and second ring waveguides. Pump light enters the second straight waveguide from the second input terminal to irradiate the metal quantum well. By changing the intensity of the pump light, the refractive index of the metal quantum well is modulated, thereby modulating the intensity of the light output from the output terminal. This optical switch exhibits high optical modulation speed and modulation efficiency.