163 results about "Modulation efficiency" patented technology

The embodiment of the invention provides an electro-optical modulator and a light quantum computer. The electro-optical modulator comprises an electrode assembly and an optical waveguide assembly. The electrode assembly comprises a positive signal electrode, a negative signal electrode, a first grounding electrode and a second grounding electrode, and the positive signal electrode and the negative signal electrode are arranged between the first grounding electrode and the second grounding electrode. The optical waveguide assembly is configured to bear optical signals and comprises a first optical waveguide and a second optical waveguide, the first optical waveguide is located between the positive signal electrode and the negative signal electrode and used for bearing first optical signals, and the second optical waveguide is located between the first grounding electrode and the positive signal electrode or between the second grounding electrode and the negative signal electrode and used for bearing second optical signals. The carrier is used for bearing second optical signals. Constant-amplitude voltage signals with opposite phases are applied to the positive signal electrode and the negative signal electrode which are tightly coupled, so that the modulation efficiency can be improved, and the common-mode noise can be reduced.

The invention discloses a micropore bubbling aeration two-stage oscillation modulation synergistic system and an application method thereof. The modulation synergistic system comprises a two-stage oscillation device, an air supply unit connected to the upstream of the two-stage oscillation device, and a micropore coil pipe and an aeration tank which are connected to the downstream of the two-stage oscillation device. The two-stage oscillation device comprises a non-feedback oscillation cavity connected with the branch section, a sound wave oscillation cavity sequentially connected with the air inlet section, and a cavity connecting section connected with the non-feedback oscillation cavity and the sound wave oscillation cavity in parallel. Controlled pulsating oscillation airflow is injected into the microporous aeration system through the two-stage oscillation device, and periodic inertia force disturbance is introduced in the bubble generation stage; the pulsating pressure field breaks through gas-liquid interface force balance under traditional steady-state airflow, so that the bubble separation critical size is remarkably reduced, hole opening air film oscillation is accelerated through high-frequency pressure oscillation, necking fracture is promoted, and the bubble separation size is reduced; and meanwhile, transient shear force generated by the pulsating airflow inhibits interaction of adjacent bubble wake flows, and the coalescence probability is reduced.

The invention discloses a multi-channel runway micro-ring modulator capable of adjusting coupling efficiency, and the modulator comprises a runway micro-ring resonant cavity which comprises a straight waveguide section and a bent section and is used for achieving the resonance of an optical signal; the Mach-Zehnder modulation structure is integrated with the micro-ring resonant cavity and is used for adjusting the equivalent coupling coefficient of the micro-ring and the main waveguide; wherein the Mach-Zehnder modulation structure comprises a coupler, a mode converter and a modulation arm. And the modulator is also provided with a heater. According to the scheme, the coupling coefficient of the micro-ring resonant cavity and the main waveguide is adjusted through the Mach-Zehnder modulation structure, the limitation of the photon lifetime of the micro-ring resonant cavity on the modulation rate is overcome, and the restrictive relationship between the bandwidth and the modulation efficiency is broken. Compared with an existing micro-ring modulator, the micro-ring modulator can still have the high-speed modulation capacity in a high-quality-factor micro-ring resonant cavity. Meanwhile, through the design of the waveguide in the Mach-Zehnder interference region, the length of the modulation region is increased while the area of the device is not increased.

The invention discloses an 8 * 8 lithium niobate array optical switch, and belongs to the technical field of integrated photon and optical communication. Comprising twenty switch units of Mach-Zehnder interferometer structures, and each switch unit is provided with a modulation arm composed of an upper bent waveguide and a lower bent waveguide and is provided with a push-pull type loading electrode. The switch units are combined in a multi-stage array mode and are connected through crossed waveguides, and the 8 * 8 array non-blocking optical switch is formed by using twenty switch units. According to the invention, the 2 * 2 optical switch units with small size and high modulation efficiency are designed, the transverse size of a modulation arm is shortened by adopting upper and lower bent waveguides, the driving voltage is reduced by combining a push-pull electrode loading technology, and finally the high-density 8 * 8 array optical switch is constructed by twenty units. By utilizing the electro-optical effect of lithium niobate, through the optimization of a bent waveguide structure and the driving of a push-pull electrode, low-power-consumption and high-speed optical path switching is realized, and a high-integration-level routing solution is provided for a high-speed optical communication system.

The invention relates to the technical field of optical fiber communication, in particular to a thin-film lithium niobate electro-optical modulator of a stepped electrode, which comprises a substrate, a buffer layer, an optical waveguide, a metal electrode and a transition layer, the optical waveguide is an X-shaped or Y-shaped cutting LN film, a traditional ridge-shaped structure is adopted, the optical waveguide is bonded to the thick SiO2 buffer layer on the substrate, the film can be prepared through various technologies such as ion implantation, wafer bonding and hot slicing, and in order to improve the electro-optical overlapping coefficient and reduce light absorption loss, a silicon dioxide transition layer is used for connecting the metal electrode and the optical waveguide. The metal electrode is of a stepped structure, the electrode can effectively reduce electrical loss and obtain high bandwidth, and the electrode is used for generating an electric field in the aspect of photoelectric efficiency; the electric field is used for changing the functional characteristics of the thin-film lithium niobate layer and further changing the optical transmission characteristics of the waveguide, so that electro-optical modulation is realized. Therefore, the problem that an existing electro-optical modulator is low in modulation efficiency is solved.

The invention provides an electro-optical modulator based on a slow light effect. The electro-optical modulator comprises a substrate, a bottom electrode, an insulating layer, a slow light waveguide layer, an upper cladding and a signal electrode which are sequentially stacked from bottom to top. Wherein the slow light waveguide layer is a photonic crystal waveguide based on Z-cut film lithium niobate, the photonic crystal waveguide comprises a line defect waveguide and a plurality of air holes arranged in a triangular lattice structure, and the plurality of air holes are symmetrically arranged at two sides of the line defect waveguide. A photonic band gap is formed by a two-dimensional periodic optical medium structure formed by combining air holes arranged in a triangular lattice structure and Z-cut film lithium niobate, the slow light effect is achieved, and light waves in a specific frequency range can only be spread along a line defect waveguide by introducing the line defect waveguide. According to the invention, the interaction between the light field and the electric field is enhanced, the modulation efficiency and performance of the electro-optical modulator can be remarkably improved, and the development trend of miniaturization, integration and high speed of an existing communication network is met.

The present invention relates to the fields of ferroelectric single crystal technology and acousto-optical device technology, particularly to a silicon-based lead magnesium niobate (PbMn) single crystal piezoelectric wafer structure, preparation method, and application. The structure comprises a silicon substrate on which a silicon dioxide layer and a single crystal piezoelectric thin film layer are sequentially disposed; the single crystal piezoelectric thin film layer is a PbMn-PT single crystal, including a binary PMN-PT single crystal thin film or a ternary PIN-PMN-PT single crystal thin film. This piezoelectric wafer structure on a silicon substrate can be used to fabricate various high-performance piezoelectric MEMS sensors, actuators, and electro-optical modulator devices. The resulting surface acoustic wave (SAW) filters and thin film bulk acoustic wave (BAW) filters exhibit a relative bandwidth increase of over 50%, and the resulting electro-optical modulators exhibit lower half-wave voltage and higher electro-optical modulation efficiency. The device volume can be reduced by 10 times, better meeting the future 6G communication requirements for higher efficiency, higher integration, and miniaturization of MEMS devices. This provides a novel multilayer piezoelectric wafer structure for the miniaturization and integration of piezoelectric MEMS and optoelectronic devices.

The invention relates to a lithium niobate electro-optical modulator and a preparation method and application thereof. The lithium niobate electro-optical modulator sequentially comprises a ground electrode, a substrate layer, a buried oxide layer, a lithium niobate waveguide and a high-dielectric-constant cladding from bottom to top. Optical isolation grooves which are symmetrically distributed are formed in two sides of the lithium niobate waveguide; the high-dielectric-constant wrapping layer comprises a first wrapping layer and a second wrapping layer from inside to outside, and the dielectric constant of the first wrapping layer is smaller than that of the second wrapping layer; the number of the high-dielectric-constant claddings is greater than or equal to 2; the lithium niobate electro-optical modulator further comprises a signal electrode, and the signal electrode is embedded in the high-dielectric-constant cladding and located above the optical isolation groove. Due to the synergistic effect of the optical isolation groove and the high-dielectric-constant cladding, the lithium niobate electro-optical modulator not only has high modulation efficiency, but also has high bandwidth. In addition, the lithium niobate electro-optical modulator disclosed by the invention has excellent power tolerance.

The invention discloses a lead zirconate titanate high-speed electro-optical modulator based on a heterogeneous integrated waveguide and a preparation method thereof, and belongs to the technical field of planar optical waveguide optical modulators and preparation thereof. The lead zirconate titanate solar cell is composed of a silicon substrate, a silicon dioxide oxide layer, an unetched lead zirconate titanate flat plate core layer, a polymer spacing layer, discrete electrodes and a polymer upper cladding layer in sequence. The polymer spacing layer and the polymer upper cladding layer are made of the same material. According to the invention, the lead zirconate titanate film is used as the waveguide core layer, the polymer spacing layer is directly spin-coated on the lead zirconate titanate film, etching of lead zirconate titanate is not needed, and the light field is limited in the waveguide core layer by controlling the spacing of the discrete electrodes deposited on the polymer spacing layer, so that the complexity of the process is obviously reduced, and the yield is improved. The electro-optic overlapping factor of the modulator is also improved, the advantage that the electro-optic coefficient of lead zirconate titanate is large is fully utilized, and the modulator manufactured through the technology further has the advantages of being high in heterogeneous integration capacity, high in modulation efficiency and the like and has wide application prospects in the aspects of meeting high-speed large-capacity data transmission and the like.

The invention discloses a thin-film lithium niobate modulator based on a zigzag electrode structure, and belongs to the technical field of electro-optical modulation. The modulator sequentially comprises a silicon substrate layer, a silicon dioxide lower cladding, a lithium niobate waveguide layer, a ridge-shaped optical waveguide layer formed by etching the upper surface of the lithium niobate layer, a silicon dioxide thin cover layer, a zigzag electrode structure and a main ground-signal-ground traveling wave electrode, and a silicon dioxide upper cladding covers the upper surface. The ground-signal-ground traveling wave electrode is composed of a first ground transmission electrode, a signal transmission electrode and a second ground transmission electrode. The zigzag electrode structure is periodically arranged, and the overlook structure of the zigzag electrode structure is composed of a plurality of triangles side by side. The invention provides a novel zigzag electrode structure, a periodic zigzag electrode is designed by utilizing a point effect, electro-optical modulation efficiency is enhanced and loss is reduced through electric field concentration, and meanwhile, the electrode structure is simple to manufacture.

According to the cluster sound absorption structure for realizing low-frequency broadband sound absorption through multi-resonance coupling, through the multi-resonance coupling among different resonance units in a resonance unit group, between the resonance unit group and a hole pipe embedded plate above and among different coupling resonance clusters, broadband sound absorption can be realized by using a small number of units, and the structure is lighter, thinner, more compact and more flexible. The sound absorption bandwidth is wider, and the sound absorption performance and the modulation efficiency are remarkably improved.

The invention relates to the technical field of integrated photons and optical communication, in particular to a film lithium niobate optical switch with high modulation efficiency, which is characterized in that a metal electrode sequentially comprises a modulation arm first electrode, a modulation arm second electrode and a modulation arm third electrode from top to bottom; the modulation arm first electrode and the modulation arm second electrode are respectively used as an upper modulation arm positive electrode and a lower modulation arm negative electrode, and the modulation arm third electrode and the modulation arm second electrode are respectively used as a lower modulation arm positive electrode and a lower modulation arm negative electrode; the modulation arm first electrode and the modulation arm third electrode are connected to lead out a first electrode pin, and the modulation arm second electrode leads out a second electrode pin; and the first grating and the second grating as well as the third grating and the fourth grating are respectively connected with two ends of the upper modulation arm and the lower modulation arm through a multimode interference device. According to the invention, low-voltage driving and high-efficiency phase regulation and control are realized in a submillimeter-level modulation region, and a foundation is laid for integration of a high-density optical switch array.

The invention discloses a micro-ring modulator with a large free spectral range and a design method of the micro-ring modulator, and belongs to the field of optoelectronic devices. A micro-ring resonant cavity corresponding to the micro-ring modulator comprises an annular waveguide, and the width of the annular waveguide is an optimized width value, so that the integral value of the group refractive index of an optical mode in the annular waveguide along a closed optical path of the annular waveguide is minimized, and meanwhile, the width is ensured to be smaller than a cut-off width supporting high-order optical mode propagation. Through the design of accurately regulating and controlling waveguide dispersion, the free spectral range of the device can be maximized on the premise of ensuring single-mode work. In addition, an asymmetric electro-optical modulation structure can be arranged on the annular waveguide so as to be matched with a distorted optical mode, and high modulation efficiency is guaranteed. The micro-ring device with ultra-large FSR, high bandwidth, high efficiency and compact size can be realized, and the micro-ring device has important application value in the field of high-density optical interconnection.

This invention relates to beam manipulation, providing a method and apparatus for generating randomly polarized beams, and pertains to the field of optical manipulation technology. The method includes generating a highly coherent linearly polarized beam using a continuous excitation light source unit; modulating the linearly polarized beam using a phase modulation unit to obtain a vortex beam with arbitrary topological charge; and modulating the vortex beam into a randomly polarized beam using a polarization modulation unit, wherein the response range of the random polarization can cover any point on the surface of a Poincaré sphere. The beam generation method provided by this invention can modulate a vortex beam carrying arbitrary topological charge into a beam with randomly varying polarization states, exhibiting high modulation efficiency, uniform polarization state distribution, and low cost, thus possessing significant practical value.

The invention discloses a dual-drive differential thin film barium titanate electro-optical modulator. Comprising a narrow linewidth laser, a first optical fiber waveguide coupling module, a second optical fiber waveguide coupling module, a first 1 * 2 optical beam splitter, a second 1 * 2 optical beam splitter, a first radio frequency module, a second radio frequency module, a GSGSG coplanar traveling wave electrode structure, a first waveguide and a second waveguide, wherein the GSGSG coplanar traveling wave electrode structure consists of a first ground electrode, a first signal electrode, a second ground electrode, a second signal electrode and a third ground electrode; the invention relates to an a-axis oriented barium titanate film and a substrate. After beam splitting, input laser is respectively injected into two parallel waveguides which are prepared on the barium titanate film and penetrate through the GSGSG structure. The first radio frequency module and the second radio frequency module apply composite modulation signals including direct current bias and differential radio frequency signals to the signal electrodes, so that the refractive indexes of the two waveguides have opposite sign changes to realize push-pull modulation, and modulated optical signals are output after beam combination. By means of the dual-drive differential and GSGSG electrode structure, the modulation efficiency is improved, and meanwhile the anti-interference capacity and stability of the device are remarkably improved.

The invention discloses a thin-film lithium niobate double-layer electrode electro-optical modulator and a preparation method thereof, and relates to the technical field of electro-optical modulation. The electro-optical modulator comprises a substrate layer, a buried oxide layer, a waveguide layer, a coating layer and a metal electrode which are sequentially arranged from bottom to top, wherein the waveguide layer is made of an X-cut film lithium niobate material; the metal electrode is of a double-layer electrode structure and comprises a cylindrical electrode structure on the lower layer and a cosine slow wave electrode structure on the upper layer. By optimizing the electrode structure design, the large modulation bandwidth can be realized while the modulation efficiency is improved.

The application provides a high-speed polarization encoding device, method and quantum communication system, the device comprising: a polarization beam splitter, a transmission light path, a first phase modulator and a first high-speed driver; the first high-speed driver is connected with the first phase modulator, and is used for applying a high-frequency modulation signal with a frequency higher than a specified threshold to the first phase modulator; the polarization beam splitter receives an optical pulse through a first port, and splits the optical pulse into a first sub-optical pulse and a second sub-optical pulse; the first phase modulator is used for phase modulating the first sub-optical pulse and the second sub-optical pulse with different modulation efficiencies based on the high-frequency modulation signal; and the polarization beam splitter is further used for combining the first sub-optical pulse and the second sub-optical pulse after phase modulation by the first phase modulator, and outputting the obtained combined optical pulse through the first port. In this way, the purpose of high-stable polarization quantum state encoding of 10GHz or higher speed is achieved.

The invention provides a slow wave structure, a terahertz traveling wave tube device and a communication device. According to the slow wave structure provided by the invention, the first sub slow wave structure and the second sub slow wave structure are ingeniously combined, so that the technical problem of insufficient output power in the prior art can be effectively solved. Specifically, the first sub-slow-wave structure performs cluster modulation on the electron beam through preset strong coupling impedance, so that the density and the modulation efficiency of the electron beam are improved; and the second slow wave sub-structure ensures that the electron beams subjected to cluster modulation can efficiently export microwave energy through the design of low transmission loss, so that the energy loss is obviously reduced. Through the innovative structural design, higher output power can be provided at a high frequency band, attenuation of microwave signals is effectively reduced, the overall performance of the system is improved, and the application requirements of high power and high efficiency are met.

The application provides a laser chip with a modulator, a preparation method and an optical module, and comprises an N electrode layer, an N-type semiconductor material layer, an active layer, an upper waveguide layer and a P-type semiconductor material layer; further comprising: a first ridge waveguide groove penetrating through the N-type semiconductor material layer; a second ridge waveguide groove penetrating through the N-type semiconductor material layer, and a ridge waveguide is arranged between the first ridge waveguide groove and the second ridge waveguide groove; a first passivation layer covering the P-type semiconductor material layer on one side of the ridge waveguide and arranged above the first ridge waveguide groove; a second passivation layer covering the P-type semiconductor material layer on the other side of the ridge waveguide and arranged above the second ridge waveguide groove; a first P electrode layer arranged on the second passivation layer above the P-type semiconductor material layer; a second P electrode layer arranged on the ridge waveguide; and a suspended electrode suspendedly arranged on the second ridge waveguide groove and electrically connected with the first P electrode layer and the second P electrode layer. The high-speed performance and the optimization of modulation efficiency are combined.

The invention relates to the field of tungsten-based alloy target material preparation, in particular to a tungsten-based multi-component alloy target material containing a W3Ni17 specific phase and a preparation method, the target material contains the W3Ni17 specific phase and auxiliary phases such as a W phase and Ni3Ta phase, W powder and Ni powder serve as basic powder, and Cr / Ta / Si powder serves as optional auxiliary powder; the preparation method comprises the steps of multi-step segmented argon protection mixing according to a specific phase atomic ratio, alloying purification, cold isostatic pressing multi-section pressure relief forming, multi-section heating hydrogen protection sintering and the like. According to the design, the problems that a conventional target material cannot form a specific functional phase, elements are segregated, the density is insufficient, and light modulation efficiency and cycling stability are difficult to consider are solved, the density of the prepared target material is larger than or equal to 96%, the average crystal grain is smaller than or equal to 50 micrometers, the W3Ni17 phase accounts for 40%-85%, and the target material is suitable for preparation of a large-area electrochromic film and meets the requirements of the fields of energy-saving buildings, automobiles and the like.

The invention relates to a terahertz modulator based on change and BIC mode switching and a mode switching method thereof. The modulator comprises a silicon substrate, a metasurface and a VO2 patch. The silicon substrate provides structural support; the metasurface is arranged on the surface of the silicon substrate, is composed of a pair of metal split resonance notch rings in mirror symmetry, and can excite a anapore mode by forming a closed surface current loop, excite an A-BIC mode by structure parameter tuning, and excite an S-BIC mode by maintaining mirror symmetry. The VO2 patch is embedded into the gap of the gap on the surface of the metasurface, the conductivity is regulated and controlled by means of temperature so as to change the current distribution on the surface of the metasurface, and dynamic switching between a BIC mode and an apole mode is achieved. According to the invention, through excitation of non-radiation mode modulation, metal ohmic loss is avoided, the maximum modulation depth reaches 80% when the A-BIC is switched to the apole mode, and the modulation efficiency is significantly improved.

The invention discloses a wavefront regulation and control method based on a dielectric metasurface, which belongs to the technical field of wavefront regulation and control, and comprises the following steps of: resolving a Helmholtz equation, obtaining a self-acceleration Bessel beam, solving a first-order derivative of the self-acceleration Bessel beam, obtaining a generalized Bessel type self-acceleration beam, and carrying out wavefront regulation and control on the basis of complex amplitude distribution of the generalized Bessel type self-acceleration beam. And a pure-phase computer-generated hologram is calculated by using complex amplitude coding. According to the electrolyte metasurface, materials with high modulation efficiency can be found in a wide wave band range, and large-scale mass production is expected to be achieved with low cost due to the common silicon-based materials and the common titanium dioxide-based materials; the metasurface is utilized to realize joint regulation and control of multiple parameters of the light beam, so that functional diversification is realized, and the application range is widened.

The invention relates to a high-modulation-efficiency phase modulator based on a silicon nitride-lithium niobate waveguide. The modulator comprises an optical transmission unit and an electric transmission unit, the optical transmission unit comprises a quartz substrate layer, a silicon dioxide buffer layer arranged above the quartz substrate layer, a composite waveguide arranged above the middle position of the silicon dioxide buffer layer, and a silicon dioxide cladding covering the outer side of the composite waveguide; the electric transmission unit comprises a metal traveling wave electrode, and the metal traveling wave electrode adopts an embedded double-layer capacitor microstructure load traveling wave electrode. By optimizing the design of the electrode structure and the waveguide structure, the modulation efficiency is remarkably improved, broadband response and low optical loss are considered at the same time, and the device is suitable for application scenes sensitive to phase modulation efficiency and power consumption, such as high-speed optical fiber communication, coherent optical transmission systems, optical phased arrays and quantum optical experiments.

The invention discloses a high-speed electro-optical modulator based on a heterogeneous integrated waveguide and a preparation method thereof, and belongs to the technical field of planar optical waveguide optical modulators and preparation thereof. The sensor is composed of a silicon substrate, a silicon dioxide oxide layer, a lead zirconate titanate flat plate layer, a polymer flat plate layer, a first grounding electrode, a signal electrode, a second grounding electrode and a polymer strip-shaped layer from bottom to top in sequence. The polymer strip-shaped layer and the polymer flat plate layer are made of the same material, and the refractive index of the polymer strip-shaped layer is lower than that of the lead zirconate titanate flat plate layer. The polymer flat plate layer prevents direct contact between lead zirconate titanate and the electrode, so that the loss of the modulator is greatly reduced. When an electric field is externally applied, the electric field is uniformly distributed between the signal electrode and the grounding electrode, and the thickness of the polymer flat plate layer and the size of the polymer strip-shaped layer are designed, so that more light fields are controlled in the lead zirconate titanate flat plate layer, and the electro-optical modulation efficiency is further improved. The manufacturing process is simplified, and the method has the advantages of low production cost, high efficiency and the like.

This invention discloses a method for oxygen vacancy control in Ga2O3 thin films based on vertical electric field modulation, belonging to the field of photoelectric conversion semiconductor materials. The method includes: 1) Ga2O3 thin film and device fabrication, 2) ionic liquid droplet addition, and 3) application of a vertical electric field for modulation. This invention achieves oxygen vacancy position modulation in Ga2O3 thin films through the action of a strong electric field, deepening the controllability of the photoelectric conversion performance of Ga2O3 thin films and demonstrating new possibilities for the construction and application of Ga2O3 thin film photodetectors. This invention not only provides a new approach and direction for solving the current difficulties of low response frequency and high static power consumption in Ga2O3 thin films, but also offers strong controllability, high modulation efficiency, and quantifiability, making it highly applicable.

A plurality of optical waveguide structures are formed in a semiconductor layer of a semiconductor photonics device in a manner in which different physical dimensions and / or configurations can be realized for the optical waveguide structures. For example, the operations described herein enable strip waveguide structures and rib waveguide structures to be formed from the same semiconductor layer and in the same process flow. Additionally and / or alternatively, rib waveguide structures having different slab thicknesses, different ridge thicknesses, and / or different combinations of slab thicknesses and ridge thicknesses may be formed from the same semiconductor layer and in the same process flow. This enables the functions performed by the optical waveguide structures to be optimized to achieve low insertion loss in the semiconductor photonics device, to achieve a high modulation efficiency in the semiconductor photonics device, and / or to achieve lower power consumption in the semiconductor photonics device, among other examples.

The present disclosure provides an optical waveguide modulation device and an optical phase modulator. The optical waveguide modulation device comprises a substrate, an isolation layer arranged on the substrate, a ridge waveguide structure arranged on a side of the isolation layer away from the substrate, comprising a first slab layer arranged on a side of the isolation layer away from the substrate, and a ridge protrusion layer arranged on a side of the first slab layer away from the isolation layer, and a first metal layer arranged on a side of the isolation layer away from the substrate and located on both sides of the ridge waveguide structure, wherein the first metal layer extends to the side of the first slab layer away from the isolation layer towards the ridge waveguide structure to cover the two side edges of the first slab layer. The technical scheme of the embodiment of the present disclosure can reduce the electromagnetic field leakage on both sides of the first slab layer of the ridge waveguide structure, so that the electric field entering the ridge structure is more concentrated, thereby improving the modulation efficiency of the optical waveguide modulation device.

The application provides an SVPWM implementation method based on a sorting method, which is used for implementing an inverter SVPWM, and is characterized in that: a sorting algorithm is used as a core to synthesize a modulation signal; firstly, the action time distribution of three-way switches in a current sector is calculated, and the action time length is sorted in descending order; secondly, according to the space vector variation law, the sorting of the action time length of the three-way switches in the current sector is calculated; then, the on-off of the switches corresponding to the action time is controlled according to the action time, so that the SVPWM signal synthesis in the current sector is realized. The application changes the algorithm core on the basis of the existing SVPWM implementation algorithm, uses the sorting method, simplifies the calculation mode of the on-off action time of the switches, reduces the calculation amount, is easier to realize digital control, and can improve the SVPWM modulation efficiency.

This invention relates to a lithium niobate electro-optic modulator, its fabrication method, and its application. The lithium niobate electro-optic modulator, from bottom to top, comprises a ground electrode, a substrate layer, a buried oxide layer, a lithium niobate waveguide, and a high-dielectric-constant cladding. Symmetrically distributed optical isolation trenches are arranged on both sides of the lithium niobate waveguide. The high-dielectric-constant cladding includes a first cladding and a second cladding from the inside out, wherein the dielectric constant of the first cladding is less than that of the second cladding. The number of high-dielectric-constant cladding layers is ≥2. The lithium niobate electro-optic modulator also includes a signal electrode embedded within the high-dielectric-constant cladding and located above the optical isolation trenches. The synergistic effect of the optical isolation trenches and the high-dielectric-constant cladding in this invention enables the lithium niobate electro-optic modulator to possess not only high modulation efficiency but also high bandwidth. Furthermore, the lithium niobate electro-optic modulator of this invention exhibits excellent power tolerance.

The invention provides a chalcogenide acousto-optic modulator. The chalcogenide acousto-optic modulator comprises a sound wave generation structure and a waveguide structure, wherein the waveguide structure is spiral and comprises a plurality of sections of acousto-optic interaction areas; the sound wave generation structure is used for receiving the radio-frequency electric signals and generating sound waves based on the radio-frequency electric signals; the waveguide structure is used for receiving incident light and sound waves, so that the sound waves modulate the incident light in a plurality of sections of acousto-optic interaction areas to output modulated light. According to the invention, the spiral waveguide structure is arranged, so that the sound waves modulate the incident light in a plurality of sections of acousto-optic interaction areas, the intensity of acousto-optic interaction is remarkably enhanced, the acousto-optic modulation efficiency is greatly improved, and efficient optical signal modulation is realized.