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313 results about "Silica coating" patented technology

Graphene-containing insulated radiating composition and preparation and application thereof

The invention discloses a graphene-containing insulated radiating composition and preparation and application thereof. The composition comprises the components of silica-coating graphene, insulated heat-conducting filler, a surface treating agent, and a function additive. The preparation method comprises the following steps of: hydrolyzing ethyl silicate on the graphene surface by the sol-gel method to obtain graphene coated with a silica film on the surface; adding the surface treating agent to a mixture of the insulated heat-conducting filler and modified graphene; uniformly agitating; then adding the function additive; and uniformly dispersing to obtain the insulated radiating composition. The composition has the advantages that the graphene is processed by insulating and coating, and the insulated heat-conducting filler and additive of other forms are coordinately added, thus the composition shows high radiating improvement effect in the plastic cement and coating fields; and the composition can be widely applied to a heating element and a radiating facility of various electronic products and electrical equipment, and can greatly improve the radiating effect as well as prolong the service life of devices.
Owner:XIAMEN KNANO GRAPHENE TECH CORP

Silicon nitride-lithium niobate heterogeneous integrated waveguide device structure and preparation method of the same

The invention relates to a silicon nitride-lithium niobate heterogeneous integrated waveguide device structure and a preparation method of the same. The silicon nitride-lithium niobate heterogeneous integrated waveguide device structure is characterized in that a silicon nitride waveguide in a silica coating layer and a lithium niobate film on the upper surface of the silicon nitride waveguide areheterogeneously integrated to form a ridge waveguide; a traveling wave electrode is arranged on the upper surface of the lithium niobate film; the silicon nitride waveguide is crossed and coupled with the lithium niobate film on the upper surface of the silicon nitride waveguide, and a high speed electric signal is applied to the traveling wave electrode to control the phase of the light wave passing through the lithium niobate film to realize conversion from amplitude modulation of the loaded electric signal to phase modulation of an optical signal; and three-dimensional vertical integrateddesign is utilized to enable integration of the chip to be more compact, so that the space is saved; at the same time insertion loss of the light waveguide can be reduced; 100G light modulation rate can be realized; high speed modulation of the light wave in the lithium niobate film can be realized and the characteristic of low loss propagation through the silicon nitride waveguide is realized; and light modulation with excellent performance is completed. The manufacturing technology of the silicon nitride-lithium niobate heterogeneous integrated waveguide device structure is compatible with the semiconductor processing technology, is high in the modulation efficiency and low in energy consumption, and has important application prospects in the optical signal processing field and other fields.
Owner:UNIV OF SHANGHAI FOR SCI & TECH
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