26272 results about "Ammonium" patented technology

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

The present invention relates to ionic silicone hydrogel polymers displaying improved lysozyme uptake, low contact angle and reduced water soluble polymeric ammonium salt uptake.

A copper plating bath comprising a reaction condensate of an amine compound and glycidyl ether and / or a quaternary ammonium derivative of this reaction condensate, and a plating method using this copper plating bath are disclosed. A copper plating bath capable of providing highly reliable copper plating on a substrate such as a silicone wafer semiconductor substrate or printed board having minute circuit patterns and small holes such as blind via-holes, through-holes, and the like, and a method of copper plating using the copper plating bath can be provided.

There is provided the reagent layer composition that can substantially reduce the measurement bias arising from hematocrits. The addition of fatty acid (4-20 carbons) and quaternary ammonium salt to a commonly used reagent layer composition composed of an enzyme, an electron transfer mediator, and several water soluble polymers not only reduce the hematocrit level-dependent bias but also provide very stable performance for an extended period of time. Disclosed are also various types of sub microliter sample volume electrochemical biosensors that are suitable to use with the reagent layer composition of present invention.

A method of depositing a film of a metal chalcogenide. The first of these methods includes the steps of: contacting at least one metal chalcogenide, a hydrazine compound and optionally, an elemental chalcogen, to produce a solution of a hydrazinium-based precursor of the metal chalcogenide; applying the solution of the hydrazinium-based precursor of the metal chalcogenide onto a substrate to produce a film of the precursor; and thereafter annealing the film of the precursor to remove excess hydrazine and hydrazinium chalcogenide salts to produce a metal chalcogenide film on the substrate. The second of these methods includes the steps of: contacting: at least one metal chalcogenide and a salt of an amine compound to produce an ammonium-based precursor of the metal chalcogenide; contacting the ammonium-based precursor of the metal chalcogenide and a hydrazine compound, and optionally, an elemental chalcogen, to produce a solution of a hydrazinium-based precursor of the metal chalcogenide in the hydrazine compound; applying the solution of the hydrazinium-based precursor onto a substrate to produce a film; and thereafter, annealing to produce a metal chalcogenide film. Also provided is a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.

Infrared absorbing N-alkylsulfate cyanine compounds and imageable compositions containing the compounds are disclosed. The compounds have the structure I: in which:R is hydrogen, or R is one or more alkyl, substituted or unsubstituted aralkyl, alkoxy, carboxyl, nitro, cyano, trifluoromethyl, acyl, alkyl sulfonyl, aryl sulfonyl, or halogen groups, or R is the atoms necessary to form a substituted or unsubstituted benzo group;A is (CH2)n; where n is 1–5; preferably 2–4;Y is O, S, NR′, or C(R′)2, where R′ is hydrogen or alkyl; preferably methyl;Z is hydrogen, halogen, alkyl, substituted or unsubstituted aralkyl; substituted or unsubstituted aroxyl, substituted or unsubstituted thioaroxyl, or substituted or unsubstituted diphenylamino;m is zero or one; andX is a cation, preferably sodium, potassium, lithium, ammonium, or substituted ammonium.

The invention relates to a method for preparing a graphite-phase carbon nitride (g-C3N4) material. The method includes the steps that a carbon nitride precursor and ammonium salt are evenly mixed, and then calcination is conducted so that the porous g-C3N4 material can be obtained. The ammonium salt is any one of ammonium base salts capable of generating ammonia gas through thermal decomposition or is the combination of at least two of the ammonium base salts. In the preparation process of the g-C3N4 material, the ammonium salt is added into the carbon nitride precursor to be mixed. In the high-temperature calcining process, the ammonium salt is subjected to pyrogenic decomposition to generate gas, a pore-forming effect on the g-C3N4 material is achieved, and the cellular porous g-C3N4 material is obtained. In the preparation process of the g-C3N4 material, template agents are not used, and thus the method is simple, efficient and environmentally friendly; the prepared g-C3N4 material is high in photocatalytic activity and can be used in the pollution control processes such as exhaust gas and wastewater treatment.

A coating system and method are described. In some embodiments, a system may include a composition. The composition may include one or more bridged polycyclic compounds. At least one of the bridged polycyclic compounds may include at least two cyclic groups, and at least two of the cyclic groups may include quaternary ammonium moieties. In some embodiments, a method may include applying a coating to a surface of a medical device. The coating may be antimicrobial. A coating may include antimicrobial bridged polycyclic compounds. Bridged polycyclic compounds may include quaternary ammonium compounds. Bridged polycyclic compounds based coating systems may impart self-cleaning properties to a surface.

This invention relates to a rubber composition which contains intercalated and at least partially exfoliated organophillic clay reinforcement formed in situ within the elastomer host from a hydrophilic clay. The invention particularly relates to an in situ modification of a hydrophilic clay to compatibilize the clay with a diene-based elastomer. The clay is converted from being hydrophilic in nature to being more hydrophobic in nature and therefore more compatible with the elastomer by bulk blending the elastomer host with a smectite clay, preferably a montmorillonite or hectorite clay, and a hydrocarbyl onium salt, such as for example a quaternary ammonium salt, and particularly in the absence of water addition to the elastomer host. Therefore, such in situ procedure of intercalation and at least partially exfoliation relies upon a bulk blending thereof with an elastomer host at an elevated temperature and under high shear conditions in contrast to pre-intercalating the clay in an aqueous based medium and in contrast to simple low viscosity melt processing of a thermoplastic polymer. The invention also relates to articles of manufacture, including tires, having at least one component comprised of such rubber composition. Such tire component may be, for example, a tire tread.

Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.