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Metal nitride carbide deposition by ALD

a technology of metal nitride carbide and deposition method, which is applied in the direction of ceramic shaping apparatus, special surfaces, electric devices, etc., can solve the problem of surface susceptible to halide attack

Inactive Publication Date: 2008-08-12
ASM INTERNATIONAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate may have a surface that is susceptible to halide attack.

Method used

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  • Metal nitride carbide deposition by ALD
  • Metal nitride carbide deposition by ALD
  • Metal nitride carbide deposition by ALD

Examples

Experimental program
Comparison scheme
Effect test

example 1

The Deposition of TiN from TiCl4 and NH3

[0176]A 200-mm silicon wafer coated with PVD copper was loaded into a Pulsar™ 2000™ ALD reactor, commercially available from ASM Microchemistry Oy of Espoo, Finland. The substrate was heated to 400° C. in a flowing nitrogen atmosphere. The pressure of the reactor was adjusted to about 5 mbar by the mass flow controller on the nitrogen line and a vacuum pump. Next, a TiNx layer was grown by ALD from sequential pulses of TiCl4 and NH3 that were separated by inert nitrogen gas.

[0177]One deposition cycle consisted of the following steps:[0178]TiCl4 pulse, for 0.05 s[0179]N2 purge for 1.0 s[0180]NH3 pulse for 0.75 s[0181]N2 purge for 1.0 s

[0182]This cycle was repeated 300 times to form about a 5-nm TiNx film. The growth rate of the TiNx film was about 0.17 Å / cycle. Then the wafer was unloaded from the reactor for analysis. Four-point probe and Energy Dispersive Spectroscopy (EDS) measurements gave a resistivity of 150 μΩcm.

6TiCl4(g)+8NH3(g)→6TiN+2...

example 2

Deposition of WNx from WF6 and NH3

[0185]A 200-mm silicon wafer coated with PVD copper was loaded to a Pulsar™ 2000™ ALD reactor. The substrate was heated to 400° C. in a flowing nitrogen atmosphere. The pressure of the reactor was adjusted to about 5 mbar by the mass flow controller on the nitrogen line and a vacuum pump. Next, a WNx layer was grown by ALD from sequential pulses of WF6 and NH3 that were separated by inert nitrogen gas.

[0186]One deposition cycle consisted of the following steps:[0187]WF6 pulse for 0.25 s[0188]N2 purge for 1.0 s[0189]NH3 pulse for 0.75 s[0190]N2 purge for 1.0 s

[0191]This cycle was repeated 70 times to form about a 5-nm WNx film. The growth rate of the WNx film was about 0.6 Å / cycle. Then the wafer was unloaded from the reactor for analysis.

[0192]Etch damage to the copper film was visible even under an optical microscope because of the nitride process. A lot of HF was evolved from the process (R2) in proportion to the deposited compound. HF may attack...

example 3

Deposition of WNx on SiO2

[0193]Tungsten nitride thin film is grown by ALD from sequential pulses of WF6, TEB and NH3 that are separated by inert nitrogen gas pulses.

[0194]One deposition cycle consists of the following steps:[0195]WF6 pulse for 0.25 s[0196]N2 purge for 1.0 s[0197]TEB pulse for 0.05 s[0198]N2 purge for 1.0 s[0199]NH3 pulse for 0.75 s[0200]N2 purge for 1.0 s

[0201]The resulting film on the substrate had rather large resistivity variation across the substrate.

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Abstract

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application is a divisional of U.S. patent application Ser. No. 10 / 242,368, filed Sep. 12, 2002, now U.S. Pat No. 6,986,914, which claims priority under 35 U.S.C. §119(e) to provisional application No. 60 / 322,385, filed Sep. 14, 2001.BACKGROUND OF THE INVENTION[0002]Atomic layer deposition (ALD), originally known as atomic layer epitaxy (ALE), is an advanced form of vapor deposition. ALD processes are based on sequential self-saturated surface reactions. Examples of these processes are described in detail in U.S. Pat. Nos. 4,058,430 and 5,711,811. The described deposition processes benefit from the usage of inert carrier and purging gases, which make the system fast. Due to the self-saturating nature of the process, ALD enables almost perfectly conformal deposition of films on an atomically thin level.[0003]The technology was initially developed for manufacturing thin film structures for electroluminescent flat panel displays ...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): B05D5/12C23C16/00H01L21/44C23C16/34C23C16/32C23C16/36C23C16/44C23C16/455H01L21/28H01L21/285H01L21/3205H01L21/768H01L23/52H01L23/532
CPCC23C16/34C23C16/45529C23C16/45531C23C16/45534H01L21/28562H01L21/28568H01L21/76807H01L21/76838H01L21/76843H01L21/76846H01L21/76862H01L21/76871H01L21/76873H01L21/76874H01L21/76876H01L23/53238C23C16/36Y10T428/24331H01L2221/1089H01L2924/0002H01L2924/00B82Y30/00C23C16/455
Inventor ELERS, KAILI, WEI-MIN
Owner ASM INTERNATIONAL
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