291 results about "Getter" patented technology

The invention discloses a compact accelerator extremely-high vacuum system and an implementation method thereof. The compact accelerator extremely-high vacuum system comprises a dipole iron vacuum chamber, a BUMP iron vacuum chamber, a BPM cavity, a vacuum pump chamber and a quadrupole iron vacuum chamber which are sequentially connected to form a beam main line. A plurality of non-evaporable getter sheets are arranged in the dipole iron vacuum chamber and the quadrupole iron vacuum chamber in an array manner and are used for extracting active gas in a beam main line to obtain extremely high vacuum; a vacuum measuring gauge tube, a sputtering ion pump, a molecular pump and a gate valve are installed on the vacuum pump chamber, the vacuum measuring gauge tube is used for measuring the vacuum degree in the beam main line, the sputtering ion pump is used for extracting argon and methane in the beam main line and conducting baking, and the molecular pump is used for rough extraction of the beam main line and exhaust in the baking process; the gate valve is used for separating the molecular pump from the beam main line. According to the invention, hydrogen, carbon monoxide and other active gases in the system can be extracted under the condition that a titanium sublimation pump cannot be installed due to insufficient space, so that extremely high vacuum can be obtained.

A vacuum insulating panel includes first and second substrates (e.g., glass substrates), a hermetic edge seal, a pump-out port, and spacers sandwiched between at least the two substrates. The gap between the substrates may be at a pressure less than atmospheric pressure to provide insulating properties. The panel may include a getter. The getter may be laser activated in a manner which causes the getter to transform and realize a Ti—Al—V phase (e.g., Al3V0.333Ti0.667) of crystallite material. The getter may be a thin film getter and / or may be elongated in shape.

The invention discloses a method and equipment for detecting a getter of a ring laser based on machine vision, and belongs to the technical field of laser gyroscope detection. According to the method, the thin film image of the getter is collected, the consumption condition of the getter is recognized by combining the color fading property of the getter after the getter reacts with the impurity gas, meanwhile, the getter parameter and the activation parameter of the ring laser are calculated according to the working condition data of the ring laser during standing and working, and the residual gas capacity of the getter is predicted based on the activation parameter. And combining the suction parameters to fit a suction characteristic function of the ring laser, and further predicting the remaining working time of the getter. According to the method, products with unqualified getter allowance can be effectively screened out, and the application reliability of the ring laser in the fields of aviation, spaceflight and the like is improved.

The present application discloses a pixel-level packaging structure for an uncooled infrared detector and a manufacturing method thereof, comprising an integrated circuit substrate and a pixel device disposed on the upper surface of the integrated circuit substrate; the pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the air-intake unit comprising a getter layer disposed on the upper surface of the integrated circuit substrate, a support layer, and a sealing layer disposed on the upper surface of the support layer; the cavity in the air-intake unit is connected to the cavity in the pixel unit; or the pixel device comprises a getter layer and a reflective layer disposed on the upper surface of the integrated circuit substrate, and an infrared sensor unit disposed above and corresponding to the reflective layer. The pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the getter layer not being disposed in the pixel unit; or the getter layer in the pixel device does not correspond to the infrared sensor unit, thereby avoiding the influence of the getter layer on the infrared sensor unit and improving the performance of the uncooled infrared detector.

The invention relates to the field of semiconductor MEMS (Micro Electro Mechanical System) devices, and discloses a medium-high-entropy alloy air suction target material which is composed of a main element A, an element C and an element B. The content of the main element A is 25-40 at%, the content of the element B is 30-45 at%, and the content of the element C is 30-45 at%; the formula equation is as follows: A < 25-40 > B < 30-45 > C < 30-45 >; the main element A is selected from one or two of V and Co; the element C is selected from one or more of Fe, Pr, Y, Gd, Nd, Er, Sm and Ce. And the element B is selected from one or two of Ti and Zr. According to the invention, the problem of serious contradiction between the air suction performance and the mechanical property of the current semiconductor MEMS sensor packaging material is solved by utilizing the advantages of rich or multi-principal-element alloy, high mixing entropy and the like in the medium-high-entropy alloy.

The utility model discloses a getter film with high initial outbreak rate and lasting moisture absorption rate for a perovskite battery, a support framework layer is an expanded polytetrafluoroethylene microporous film layer, and an active layer is a getter active layer formed by infiltrating a getter into a pore structure of the expanded polytetrafluoroethylene microporous film layer. The composite layer is a getter composite layer formed on at least one side surface of the expanded polytetrafluoroethylene microporous membrane layer through a getter. Through the above mode, the periphery of the active material layer of the perovskite cell in a service environment can be kept in a vacuum state for a long time, and the perovskite cell is ensured to be in a high photoelectric conversion efficiency and a stable state for a long time; the getter film is coated with a back adhesive layer and is non-corrosive, and the getter film can be directly pasted on a glass cover plate of a perovskite cell or on silver, aluminum and copper electrodes for packaging after the release film is uncovered during use; and the initial explosion rate is high, and moisture and oxygen can be quickly absorbed in the packaging cavity within two hours, so that a vacuum state is achieved.

According to the packaging method for the chip atomic clock physical system, the getter with the low activation temperature and the solder ring with the high heat sealing temperature are selected, meanwhile, the temperature gradient with the degassing temperature, the getter activation temperature and the vacuum heat sealing temperature rising in sequence is designed, the getter is deposited on the inner wall of the ceramic cap through the chemical vapor deposition technology, and the chip atomic clock physical system is obtained. The integrated structure of the ceramic cap and the getter is formed, the adsorption area is increased through the full-coverage design of the getter, in the out-of-furnace assembly link, the photoelectric component is fixed through a preset bearing area of the ceramic base, the solder ring is limited through an edge sealing area, and the alignment deviation is detected and adjusted in cooperation with an assembly clamp for positioning and a detection tool for detecting and adjusting. The system to be packaged is ensured to be accurately aligned before entering the furnace, part dislocation caused by view limitation in traditional in-furnace assembly is avoided, the comprehensive effects of equipment demand reduction, production efficiency improvement and packaging precision improvement are finally achieved, and it is ensured that the frequency stability and the service cycle of the chip atomic clock meet the use demand.

The utility model relates to a vacuum plate structure, which is applied to the technical field of vacuum plates and comprises an aluminum plastic film, a core material and a getter, the aluminum-plastic film is provided with two layers, namely an upper aluminum-plastic film layer and a lower aluminum-plastic film layer, and the upper aluminum-plastic film layer and the lower aluminum-plastic film layer are annularly sealed; the core material is filled between the upper aluminum-plastic film layer and the lower aluminum-plastic film layer, the getter is arranged between the upper aluminum-plastic film layer and the lower aluminum-plastic film layer, and the space between the upper aluminum-plastic film layer and the lower aluminum-plastic film layer is vacuumized; the aluminum-plastic film comprises a nylon protective layer, a first aluminum foil layer and a polyethylene PE layer which are sequentially stacked, and the polyethylene PE layer in the upper aluminum-plastic film layer and the lower aluminum-plastic film layer is arranged on the side close to the core material. The space between the upper aluminum plastic film layer and the lower aluminum plastic film layer is filled with the core material and the getter, and vacuumizing treatment is carried out, so that the sound insulation characteristic of the vacuum plate is improved; and the first aluminum foil layer in the aluminum-plastic film can improve the sound insulation index of high-frequency sound in the vacuum plate, reduce the air leakage rate and improve the durability of the vacuum plate.

A vacuum insulating panel includes first and second substrates (e.g., glass substrates), a hermetic edge seal, a pump-out port, and spacers sandwiched between at least the two substrates. The gap between the substrates may be at a pressure less than atmospheric pressure to provide insulating properties. The panel may include a getter. The getter may be a thin film getter and / or may be elongated in shape.

The invention relates to a MEMS component having a MEMS element with a chamber, the chamber being at least partially delimited by an ASIC component, the ASIC component having a plurality of conductor track layers which lie one above the other in the y-direction between a cover layer and a bottom layer, the conductor track layers being connected to circuit elements of the ASIC component and / or sensor elements and / or actuator elements of the MEMS element, the ASIC component is adjacent to the chamber via the cover layer, the conductor track layers comprise at least one first conductor track layer and at least one second conductor track layer, the first conductor track layer is arranged between the second conductor track layer and the cover layer, the first conductor track layer comprises at least one first conductor track, and the second conductor track layer comprises at least one second conductor track. The first conductor path has a layer stack consisting of an aluminum layer and a titanium layer arranged one above the other in the y-direction, the titanium layer being arranged between the second conductor path layer and the aluminum layer, the titanium layer having a thickness in the y-direction greater than 40 nm, the second conductor path layer having a copper-containing second conductor path, the thickness of the titanium layer being greater than 40 nm, and the thickness of the aluminum layer being greater than 40 nm. The titanium layer is provided as a getter layer for bonding hydrogen, the hydrogen being releasable from the copper layer of the second conductor track, in particular from the stack of copper-based conductor track layers, and the titanium layer reducing or preventing the entry of the released hydrogen into the chamber.

To suppress the decline in exhaust performance. [Solution] The non-evaporative getter coated component 100 includes a non-evaporative getter material layer 102 and a noble metal layer 103 formed on top of the non-evaporative getter material layer 102, and includes a barrier layer 104 between the substrate 101 and the non-evaporative getter material layer 102. The non-evaporative getter material layer 102 is, for example, a Ti layer. The noble metal layer 103 is, for example, a Pd layer. The barrier layer 104 is a film of either an oxide film 104a of the non-evaporative getter material or a nitride film 104b of the non-evaporative getter material. The oxide film 104a of the non-evaporative getter material is, for example, a TiO2 layer. The nitride film 104b of the evaporative getter material is, for example, a TiN layer.

The utility model relates to the technical field of getter testing, in particular to an automatic cycle testing system for a getter pump. The system comprises a vacuum chamber, a vacuumizing system, a baking temperature control system, an activation power supply, a cooling device and an air supply system, wherein valves, instruments, a heating power supply, a cooling power supply and an activation power supply on a connecting pipeline are connected with a data acquisition system and an automatic control system; besides, the vacuum chamber is divided into a Pm chamber and a Pg chamber by an orifice plate, the Pm chamber is connected with an air supply system, a to-be-detected getter pump is arranged in the Pg chamber, a valve switch in the system is controlled through a data acquisition system and an automatic control system, and circulation of heating activation, low-pressure air chamber pressure adjustment, cooling and air suction test is automatically completed. Meanwhile, the pressure of the Pm chamber and the pressure of the Pg chamber are recorded, and the inspiration rate, the inspiration capacity and corresponding curves are automatically calculated. According to the detection system and method, automatic control of multi-cycle inspiration testing can be realized, and the testing efficiency and the testing accuracy are improved.

The utility model discloses an upper adsorber equipment, including conveying device and blanking device, conveying device includes conveyer belt and conveying frame, and conveyer belt rotatable is established on conveying frame, blanking device includes frame body, base, storage tube and horizontal push mechanism, and frame body is erected on conveying frame, and base sets up on frame body and is located conveying belt top, and storage tube sets up on base, and forms storage cavity in storage tube, and the lower extreme of storage tube is the discharge gate, and forms the push material space between discharge gate and base, and horizontal push mechanism sets up on base, and horizontal push mechanism includes the horizontal push piece of push material space transverse movement. The utility model discloses through setting up conveying device and blanking device, realizes the automatic adsorber on core material, is applicable to the automatic batch production of vacuum heat insulation board.

Coated components and their methods of formation are provided. The coated component includes: a ceramic matrix composite substrate comprising silicon carbide and having a surface; a bond coat on the surface of the substrate; and an environmental barrier coating on the bond coat. The bond coat includes a plurality of discrete particles dispersed within a matrix phase that includes mullite. The plurality of discrete particles includes an oxygen getter and a transition metal oxide.

The utility model discloses a kind of high-purity germanium detector vacuum life measuring device, including vacuum generation module and detection component, detection component is by first detection module and second detection module intercommunication composition, vacuum generation module and detection component intercommunication;First detection module includes first vacuum angle valve, vacuum leak and release gas test chamber and first vacuum gauge;Second detection module includes second vacuum angle valve, getter test chamber, getter sample chamber, second vacuum gauge, fine adjustment valve and high-purity test gas tank;The high-purity germanium detector vacuum life measuring device of this is vacuumized to detection component by vacuum generation module, subsequently detects the leak and release gas amount of high-purity germanium detector by first detection module, and then detects the getter gas suction capacity by second detection module, i. e. The vacuum life of high-purity germanium detector can be detected and calculated;The device can effectively detect the vacuum performance of high-purity germanium detector, provide support for the maintenance of high-purity germanium detector, ensure its detection accuracy.

The invention relates to the technical field of getters, and discloses a getter for a vacuum insulated panel and a preparation method of the getter. The getter for the vacuum insulated panel comprises the following components in percentage by mass: 55-65% of calcium oxide, 12-18% of activated aluminum oxide, 6-8% of manganese dioxide, 4-6% of copper oxide, 3-5% of yttrium oxide, 5-7% of zirconium dioxide and 1-2% of chromium powder. The preparation method of the getter comprises the following steps: S100, carrying out ball milling treatment on calcium oxide, activated aluminum oxide, manganese dioxide, copper oxide, yttrium oxide, zirconium dioxide and chromium powder to obtain powder, and drying the powder; s200, mixing the dried powder with deionized water and polyvinyl alcohol, and drying to prepare porous spherical particles; s300, after gradient sintering is conducted on the porous spherical particles, rapid cooling is conducted, and particles of a multi-stage pore channel structure are obtained; and S400, dipping the particles with the hierarchical porous structure in a chromic acid solution, and drying to obtain the getter. According to the technical scheme, the technical problems of low efficiency and insufficient adsorption capacity of a getter in the prior art are solved.

The present invention relates to the field of new materials. Disclosed are a composite getter material capable of efficiently absorbing nitrogen, and a preparation method therefor. The composite getter material comprises a main component A and an additive component B. The main component A and the additive component B form an aAbB composite getter, wherein a+b=100%, 50 wt%≤a<100 wt%, and 0 wt%<b<50 wt%. The composition of the main component A is (SiO2)1-x-y-z(Al2O3)x(CaO)yCz, wherein 20 wt%≤x≤70 wt%, 10 wt%≤y≤60 wt%, and 0 wt%≤z≤40 wt%. The additive component B is a metal compound Zr-Ti-V getter material. The aAbB composite getter of the present invention has greatly improved absorption capacity for CO and H2O; moreover, the getter material can also absorb N2 on the basis of absorbing CO and H2O, thereby ameliorating the problem of existing metal oxides having poor N2 absorption capacity, and also improving the absorption capacity of the metal oxide (SiO2)1-x-y-z(Al2O3)x(CaO)yCz for CO, H2O and N2.

The invention relates to the field of getter pumps, and discloses a composite getter pump which comprises a getter pump part and an ion pump part which share the same shell. The getter pump part comprises a getter pump core arranged in the air suction cavity of the shell; the ion pump part comprises an anode barrel, a pair of magnets, a pair of cathode plates, a pair of bottom plates and shielding iron; the anode barrel is arranged in the shell and is electrically connected with an electrode arranged on the shell; the pair of magnets, the pair of cathode plates, the pair of bottom plates and the shielding iron are arranged on the periphery of the anode barrel to form an ion pump air exhaust cavity; and the air suction cavity is communicated with the ion pump air exhaust cavity. The structure is compact, the integration degree is high, and the size and the weight are obviously reduced.

A method for manufacturing a glass panel unit includes a working step, an assembling step, a bonding step, and a gas exhausting step. The working step includes a getter material making step including obtaining a getter material containing a zeolite and a cerium compound. The assembling step includes preparing an assembly. The bonding step includes melting a peripheral wall to hermetically bond a first glass pane and a second glass pane. The gas exhausting step includes exhausting a gas from an internal space through an exhaust port to turn the internal space into a vacuum space.

The present disclosure relates to an organic light emitting display device, and an organic light emitting display device according to an exemplary embodiment of the present disclosure includes a filler filling a gap between a second substrate and an organic light emitting diode, and a dam structure disposed in a non-display area and surrounding the filler. At least one of the dam structure and the filler includes a getter. The getter of the present disclosure is composed of magnesium oxide particles whose surface is modified by a first surface modification part made of an amino silane-based compound and a second surface modification part bonded to the first surface modification part and made of a compound including an acrylate group and a methacrylate group. Accordingly, an organic light emitting display device having high transparency and whose lifespan and durability are improved by minimizing the penetration of water and oxygen can be provided.

The invention discloses an efficient hydrogen purification device suitable for an ultra-high-temperature working condition. The efficient hydrogen purification device comprises a pressure-bearing shell; the Getter material bed layer is arranged in the pressure bearing shell; the heating system is used for heating the Getter material bed layer, and the heating system is configured to maintain the operation temperature of the Getter material bed layer at 600 DEG C + / -10 DEG C; the invention further discloses an efficient hydrogen purification method suitable for the ultrahigh-temperature working condition. According to the invention, high-efficiency purification of hydrogen under high-temperature and high-pressure conditions is realized, the impurity content is obviously reduced, the service life of the device is prolonged, and reliable technical support is provided for industrial hydrogen purification.

The utility model relates to the technical field of feed processing, in particular to a waste gas collecting device for feed processing, which comprises a device base, high-tightness mechanisms are arranged on the inner walls of a main air pipe and a getter pump, and convenient-to-clean mechanisms are arranged on the surface of a first filter screen and the inner wall of an air inlet pipe. And a centralized collecting mechanism is arranged on the surface of the collecting frame and the inner wall of the collecting box. According to the waste gas collecting device, the phenomenon of waste gas leakage in the using process of the waste gas collecting device is avoided, and the phenomenon that the waste gas collecting device cannot be continuously used due to surface blockage of the first filter screen in the using process of the waste gas collecting device is avoided; in addition, when the waste gas collecting device is used, powder can be collected together in a centralized mode, the phenomenon that the surface of the main air pipe is blocked in the using process of the waste gas collecting device is reduced, and the product recovery rate is increased.

Semiconductor-on-insulator substrate, SOI substrate, comprising: a handling substrate (104); a device layer (108) that lies above the handling substrate (104); and an insulating layer (106) separating the handling substrate (104) from the device layer (108), wherein the insulating layer (106) meets the device layer (108) at a first interface and meets the handling substrate (104) at a second interface, wherein the insulating layer (106) has a getter material with a getter concentration profile, the getter concentration profile having a first peak concentration at the first interface, a second peak concentration at the second interface and a trough concentration at a location between the first interface and the second interface, wherein the trough concentration is smaller than each of the first peak concentration and the second peak concentration, the getter material contains fluorine.

The invention discloses an electric field sensor field enhancement cover plate and a preparation method thereof, and belongs to the technical field of micro electro mechanical system manufacturing. The method comprises the following steps: etching a groove on the silicon surface of a silicon wafer or an insulator to form a reinforcing structure; preparing a flat to-be-bonded surface through a bonding and thinning process; performing laser cutting on the glass sheet to form a reserved hole; and bonding the glass sheet and the bonding surface to form the cover plate. Optional steps include sputtering a getter and a metal bonding layer. The bonding process is used for replacing traditional glass backflow, two photoetching steps are omitted, the problems that glass filling is uneven and the surface is uneven are solved, the technological process is remarkably simplified, and the yield is improved. The method is suitable for wafer-level electric field sensor packaging, and the sensitivity and reliability are improved.

The utility model discloses a getter supply device for a vacuum glass production line, which relates to the technical field of vacuum glass production and comprises a shell, an air cylinder is mounted on one side in the shell, the output end of the air cylinder is connected with a trailer, one side of the top of the trailer is connected with a sliding plate, and a groove is formed in the bottom of the trailer. A limiting frame is fixed to one side in the shell, and the interior of the limiting frame is connected with an abutting plate through a torsional spring shaft. Through the arrangement of the air cylinder, the trailer, the sliding plate, the groove, the limiting frame, the torsion spring shaft and the abutting plate, the getter body falls on the trailer under the influence of gravity, the trailer is pushed by the air cylinder to move so that the trailer can enter the vacuum glass body, and when the trailer moves, the getter body can abut against the abutting plate so that the abutting plate can rotate downwards in the direction of a vacuum chamber; therefore, the abutting plate is prevented from affecting movement of the getter body. And continuous processing is facilitated, and a getter is conveniently supplied to the tubular vacuum glass.

The present disclosure provides metal getters in vaporizers and related systems and methods. A vaporizer includes a container having an outlet. The vessel is configured to discharge a metal halide vapor through the outlet. The vaporizer includes a metal getter positioned within the vessel between an inlet and an outlet. When an oxygen-containing species is present within the vessel, the impurity content of the metal halide vapor discharged from the vessel is less than the impurity content of the precursor vapor discharged from a vessel without the metal getter.

The invention belongs to the technical field of microelectronics, and more particularly relates to a wafer level vacuum packaging structure and method for a micromechanical resonator, the structure comprises a cavity formed by a thin film packaging structure and a resonator substrate, and a resonator vibration part is suspended in the cavity through a support structure connected with the substrate; the thin film packaging structure is composed of a supporting layer, a getter layer and a packaging layer. The getter layer is embedded in the supporting layer; the packaging layer is composed of two or more than two layers of thin films and comprises two or more than two different materials. According to the packaging layer, the residual stress in the thin film packaging structure is regulated and controlled by adjusting the thickness ratio of different film layers, and the mechanical reliability of the packaging structure is improved; a getter material is embedded in a thin film packaging structure, and activation is realized by utilizing high temperature of an epitaxial growth polycrystalline silicon process, so that the high vacuum degree of a packaging chamber is ensured.

An integrated circuit (IC) substrate manufacturing process provides time-dependent device characteristic variation due to hydrogen absorption by including one or more gettering layers near devices that would otherwise absorb hydrogen and exhibit the variation as hydrogen migrates into the devices. The method includes forming or mounting the devices on an upper surface of a semiconductor wafer in a die region of the substrate, forming a semiconductor structure in the semiconductor die region, forming a getter layer above or adjacent to the devices in the die region, and processing the wafer by one or more processes that expose the wafer to a vapor having a hydrogen content, whereby the amount of hydrogen absorbed by the devices is reduced by the presence of the getter layer. The method produces a wafer including a semiconductor die having reduced hydrogen absorption by the devices, and a packaged IC including the die.

The invention discloses a residual life prediction method and system for a laser gyroscope, and belongs to the technical field of laser gyroscope detection. The method comprises the following steps: calculating a first degradation rate of a resonant cavity and a second degradation rate of a cathode by collecting discharge data of a laser gyroscope, updating the first degradation rate and the second degradation rate according to a lock region width and a beat frequency signal-to-noise ratio, and meanwhile, collecting a film image of a getter to calculate a third degradation rate of the getter. Generating a relation matrix based on the first degradation rate, the second degradation rate and the third degradation rate, fitting a degradation model according to the relation matrix, and predicting the residual life of the laser gyroscope based on the degradation model. According to the method, the laser gyroscope products with the residual life not reaching the standard can be effectively screened out, so that the application reliability of the laser gyroscope in the fields of aviation, spaceflight and the like is improved.