517 results about "Getter" patented technology

The invention discloses a vacuum microcavity interferometer chip, a manufacturing method and a low-drift optical pressure sensor, a film island structure is formed on the upper surface of a first substrate, and the film island structure comprises a protruding part and a pressure sensitive film surrounding the protruding part; a first side wall part, a getter cavity, a second side wall part and an F-P interference cavity located in the center are sequentially arranged on the lower surface of the first substrate in the radial direction, a first reflecting surface is deposited on the lower surface of the first substrate in the F-P interference cavity, and a second reflecting surface is deposited on the upper surface of the second substrate in the F-P interference cavity. A first optical antireflection film is deposited on the surface of the protruding part, and the first optical antireflection film, the protruding part, the pressure sensitive film, the first reflecting surface and the second reflecting surface have the same center; the filter further comprises a vent hole, and the vent hole is formed in the second side wall part and used for communicating the getter cavity and the F-P interference cavity.

The invention discloses vacuum glass and a preparation method thereof. The preparation method comprises the following steps: grinding corners on one sides of the back surfaces of two glass sheets to form notches; tempering the two glass sheets, coating the outer edges of the back surfaces of the glass sheets with a first solder, and forming a notch; combining the two glass sheets; sealing the two glass sheets for the first time after the two glass sheets are combined; a getter is placed in the cavities of the two glass sheets through the notches in the sealing frame; sintering the second welding flux to form an inlaying piece and inserting the inlaying piece into the notch, wherein one end of the inlaying piece is arranged towards the cavity; elastic pressurizing devices are mounted on the two glass sheets, and the elastic pressurizing devices elastically abut against the other ends of the inlaying pieces; and sequentially carrying out vacuumizing and secondary sealing on the two glass sheets, so that vacuum is formed in the cavity, and the second welding flux is molten to seal the notch. The invention solves the problem that the solder at the vacuum lower edge part is easy to foam when being heated at high temperature in the existing vacuum glass preparation method.

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

The invention relates to the technical field of uncooled infrared detectors, in particular to an area array type pixel packaging uncooled infrared detector and a preparation method thereof, and the preparation method comprises the steps: dividing a readout circuit substrate into a pixel region and a getter region, preparing a structural cavity, and manufacturing a first release hole and a second release hole in the structural cavity, releasing the sacrificial layer of the structural cavity; the first release hole is shielded, and only the second release hole is opened; a getter coating process is carried out on the structural cavity, and a getter material is deposited to a getter area through a second release hole in an area which is not shielded by the shielding baffle; after the getter of the structural cavity is deposited, the structural cavity shielding baffle is removed, and the first release hole is opened; and plating a hole sealing film on the structural cavity, completing the sealing of the vacuum cavity, and then activating the getter of the structural cavity. According to the invention, the vacuum degree of the detector cavity is ensured, and a powerful guarantee is provided for subsequent performance improvement of the detector.

The invention discloses a seal welding jig and semiconductor process equipment, and belongs to the technical field of seal welding. The seal welding jig comprises a base, a pressure applying assembly and a deformation supporting piece, the base is provided with a supporting area used for containing a sample to be sealed and welded, the deformation supporting piece is arranged on the base and protrudes out of the surface, provided with the supporting area, of the base, and the deformation supporting piece is located on the periphery of the supporting area and supports the sample to be sealed and welded in the supporting area. Under the condition that the wafer is supported by the deformation supporting piece, the sample to be sealed and welded is opposite to the wafer, a gap is formed between the sample to be sealed and welded and the wafer, the pressure applying assembly can apply pressure to the wafer, and the deformation supporting piece deforms, so that the wafer is close to the sample to be sealed and welded and is bonded with the sample to be sealed and welded. The semiconductor process equipment comprises the sealing and welding jig. Thus, the wafer is supported by the deformation supporting piece, the wafer is separated from the to-be-sealed sample, the getter of the to-be-sealed sample has a large space to be activated, and the vacuum effect after the wafer and the to-be-sealed sample are sealed can be improved.

The invention relates to a vacuum microcavity interferometer chip, a manufacturing method and a wide-range optical pressure sensor. Comprising a first substrate and a second substrate, the second substrate and the first substrate are bonded into a whole, a pressure sensitive film is manufactured on the first substrate, a first reflecting surface is deposited on the pressure sensitive film, and a second reflecting surface corresponding to the first reflecting surface is deposited on the second substrate. After the two substrates are bonded, the first reflecting surface and the second reflecting surface form an F-P optical interference cavity, at least one getter cavity is arranged on the first substrate and / or the second substrate, a getter film is arranged on the surface of the getter cavity, and the getter cavity and the F-P optical interference cavity are separated and connected through an air channel, so that the size of the air channel can be made to be very small, and the size of the getter cavity is smaller than that of the F-P optical interference cavity. A small amount of particles generated after the getter is activated are prevented from polluting an optical film to cause device failure; the whole sensor is of a sealed structure and is not provided with a structure externally connected with the chip, so that the overall airtightness of the chip is ensured, and the vacuum degree requirement of subsequent shell packaging is reduced.

The invention relates to a vacuum packaged chip atomic clock getter activation device and a use method thereof.The getter activation device is arranged to be of a structure with a heating module on the upper portion and a heat dissipation module on the lower portion, and the heating module and the heat dissipation module are not in contact during use; an inner cavity of an upper groove in the heating module is fully attached to a ceramic sealing cap of the chip atomic clock, the upper groove is heated to the optimal activation temperature of the getter through a PTC heating piece, and then heat preservation is conducted for a period of time, so that it is guaranteed that the getter on the inner wall of the ceramic sealing cap is fully activated; in the activation process, the semiconductor cooler and the water cooling plate in the heat dissipation module are started at the same time, the double heat dissipation structure effectively ensures that the In0. 97Ag0. 03 welding ring located in the lower groove is not melted due to overheating, and therefore the long-term stability of the vacuum degree of the chip atomic clock vacuum packaging cavity is guaranteed. The getter activating device has the advantages of being high in heating speed, good in heat dissipation effect, simple in design, convenient to operate, capable of saving cost and the like.

The invention relates to the technical field of vacuum measurement, in particular to a multi-sealing-cavity MEMS capacitor thin film vacuum gauge, and is characterized in that a silicon substrate is arranged above substrate glass and is bonded with the substrate glass; a pressure sensing film is obtained in the middle of the silicon substrate in a photoetching and dry etching mode; a fixed metal electrode is obtained in the middle of the substrate glass in a photoetching and sputter coating mode; a capacitance gap is formed between the fixed metal electrode and the pressure sensing film; photoetching and corroding the silicon substrate, forming a working sealing cavity above the pressure sensing film, and respectively forming a first cavity and a second cavity above two sides of the pressure sensing film; getter blocks are arranged in the first chamber and the second chamber; and the sealing glass is arranged above the silicon substrate. On the premise that the size of the vacuum gauge is not obviously increased, the multiple chambers are arranged to form the sealing cavity, the air suction capacity is improved, high vacuum obtaining and long-term maintaining performance of the sealing cavity of the vacuum gauge are ensured, and the long-term stability of the vacuum gauge is greatly improved.

A process for fabricating a detecting device includes producing a getter pad based on amorphous carbon resting on a mineral sacrificial layer that covers a thermal detector and producing a thin encapsulating layer that rests on the mineral sacrificial layer and that covers an upper face and sidewalls of the getter pad. The mineral sacrificial layer is removed via a first chemical etch, and a protective segment of the getter pad is removed via a second chemical etch.

The disclosure provides a test device and a test method for isotope measurement of noble gases in lunar soil. The testing device includes a carbon dioxide laser ultra-high vacuum sample melting system, zirconium-aluminum getters, a vacuum dry pump, a first molecular pump, a second molecular pump, a neon gas capture unit, an argon gas capture unit, an argon krypton-xenon capture unit, a dilution tank, a sputtering ion pump and a noble gas mass spectrometer which are connected through pipelines, and each pipeline and each component are connected through a specific way; in addition, control valves for controlling the opening and closing of the pipelines are installed on the connection path between each pipeline and each component, and the disclosure also provides a matching test method.

The invention relates to the technical field of ion beam tubes, in particular to a titanium alloy lining dipolar iron pipeline treatment method which comprises the steps that a getter film is deposited on the inner wall of a dipolar iron pipeline; the dipolar iron pipeline is installed in an extremely high vacuum system to be subjected to vacuum baking activation; the dipolar iron pipeline is cooled through a low-temperature medium, so that the temperature of the getter film reaches a first set temperature; and continuously introducing a low-temperature medium into the cooling pipeline, and meanwhile, keeping an ion pump of the extremely high vacuum system in a working state until the target ultimate vacuum degree is obtained. According to the scheme, the defects that in the prior art, the vacuum degree of a titanium alloy lining dipolar iron pipeline is reduced in a high-temperature environment and the adsorption capacity of a getter film is reduced are overcome, and the purposes of improving the vacuum degree of the pipeline and enhancing the beam stability are achieved.

A process for manufacturing a detection device having at least one thermal detector covered by a mineral sacrificial layer, at least one getter portion covered by a carbon-based sacrificial layer, and a thin encapsulation layer surrounding the thermal detector and the getter portion includes a making a through-opening extending through the mineral sacrificial layer and opening on the substrate. The carbon-based sacrificial layer is deposited so as to cover the getter portion located in the through-opening and to entirely fill the through-opening.

The invention discloses a fiber / powder composite VIP core material based on a DLP technology and a preparation method and application thereof, and belongs to the technical field of vacuum insulation panel manufacturing. The preparation method of the core material comprises the following steps: (1) uniformly stirring and mixing glass fibers, gas-phase SiO2 powder, light-cured resin, a dispersing agent and a photoinitiator to obtain a printing material; (2) printing a fiber / powder composite VIP core material by adopting the printing material in the step (1) according to a three-dimensional model of a preset structure, drying and cooling; and (3) putting the core material in the step (2) into a barrier film, adding a getter, and packaging to obtain the product. The method has the beneficial effects that solid-phase heat conduction can be effectively reduced through elaborately optimized material composition and structural design, particularly fiber directional layered arrangement which is beneficial to realization based on a DLP printer, and fiber pores can be further filled after gas-phase SiO2 is compounded. The heat conductivity of the VIP can be reduced to 0.0025-0.0035 W / (m.K) by combining the synergistic effect of all the components, and is remarkably improved compared with that of traditional VIP.

The invention discloses a compact accelerator extremely-high vacuum system and an implementation method thereof. The compact accelerator extremely-high vacuum system comprises a dipole iron vacuum chamber, a BUMP iron vacuum chamber, a BPM cavity, a vacuum pump chamber and a quadrupole iron vacuum chamber which are sequentially connected to form a beam main line. A plurality of non-evaporable getter sheets are arranged in the dipole iron vacuum chamber and the quadrupole iron vacuum chamber in an array manner and are used for extracting active gas in a beam main line to obtain extremely high vacuum; a vacuum measuring gauge tube, a sputtering ion pump, a molecular pump and a gate valve are installed on the vacuum pump chamber, the vacuum measuring gauge tube is used for measuring the vacuum degree in the beam main line, the sputtering ion pump is used for extracting argon and methane in the beam main line and conducting baking, and the molecular pump is used for rough extraction of the beam main line and exhaust in the baking process; the gate valve is used for separating the molecular pump from the beam main line. According to the invention, hydrogen, carbon monoxide and other active gases in the system can be extracted under the condition that a titanium sublimation pump cannot be installed due to insufficient space, so that extremely high vacuum can be obtained.

A vacuum insulating panel includes first and second substrates (e.g., glass substrates), a hermetic edge seal, a pump-out port, and spacers sandwiched between at least the two substrates. The gap between the substrates may be at a pressure less than atmospheric pressure to provide insulating properties. The panel may include a getter. The getter may be laser activated in a manner which causes the getter to transform and realize a Ti—Al—V phase (e.g., Al3V0.333Ti0.667) of crystallite material. The getter may be a thin film getter and / or may be elongated in shape.

The invention relates to the field of MEMS device packaging, in particular to a high-vacuum MEMS device packaging process, which comprises the following steps: after bonding of an MEMS device is completed, pre-fixing a getter into a tube shell, so that the getter is at least electrically connected with a pair of pins on the tube shell; configuring a power supply plugging assembly and an activation tool in the vacuum chamber; the vacuum degassing tube shell is assembled on the activation tool, the pair of pins, electrically connected with the getter, on the tube shell is electrically connected with the power supply plug-in assembly, the getter is electrified and activated through the power supply plug-in assembly, and compared with a traditional high-temperature heating mode for the whole packaging device, the whole packaging device can be prevented from being heated, and the packaging efficiency is improved. Getter activation and seam welding procedures are completed at a time, and a high vacuum environment and good sealing performance of a device in the packaging process are ensured.

A direct converter for an axisymmetric mirror confinement system provides a set of radially symmetric vanes charged to capture ions escaping along the axis of the confinement system and to convert their energy to electrical power. An electron trap positioned before the charged vanes uses a magnetic field to divert and collect electrons, separating them from the ions, and may support a radial electric field providing plasma control. The charged vanes may be constructed of or have a coating of a getter material absorbing neutrals derived from those ions after capture.

The invention relates to a vacuum microcavity interferometer chip, a manufacturing method and an ultra-high precision optical pressure sensor, the lower surface of a first substrate is etched to form a concave cavity, after the first substrate and a second substrate are bonded, the concave cavity forms an F-P interference cavity, and the F-P interference cavity forms an F-P cavity; a first reflecting surface is arranged on the surface of the first substrate in the F-P interference cavity, a second reflecting surface is arranged on the surface of the second substrate in the F-P interference cavity, an annular cavity is formed in the upper surface of the third substrate, and the getter film is deposited on at least one surface in the annular cavity. The second substrate is provided with at least one vent hole, and the vent hole is communicated with the F-P interference cavity and the annular cavity; the projections of the annular cavity and the F-P interference cavity on the horizontal plane at least partially coincide.

The invention provides a non-evaporable composite Cu-TiZrV getter film and a preparation method thereof. The non-evaporable composite Cu-TiZrV getter film comprises a getter layer and a metal Cu layer, the air suction layer comprises elements Ti, Zr and V. According to the non-evaporable composite Cu-TiZrV getter film provided by the invention, the surface of the TiZrV getter layer is covered with the Cu metal layer with good conductivity, so that the getter layer is effectively protected, internal oxygen content saturation caused by exposure to the atmosphere for multiple times is avoided, the resistivity of the composite film is remarkably reduced, activation is realized in the baking process of 180-300 DEG C, and the non-evaporable composite Cu-TiZrV getter film has a good application prospect. And good air suction performance is maintained at room temperature. The composite film has important practical significance and application value in the aspects of obtaining and maintaining ultrahigh vacuum of a vacuum chamber.

The present invention relates to the field of infrared detector dewar technology, and specifically provides an adsorbent adaptive packaging structure and installation method, including: a fixing ring, including: an annular portion, the annular portion having an opening, the annular portion forming two end portions at the opening; two connecting portions, the two connecting portions being respectively connected to one end of the two end portions of the annular portion; a first support leg and a second support leg, the first support leg and the second support leg being respectively connected to the other end of the two connecting portions; wherein the two end portions are arranged to overlap, or the two connecting portions are arranged to overlap, or the first support leg and the second support leg are arranged to overlap. The present invention optimizes the fixing ring into an elastic adaptive structure, making it more convenient and firm to fix the adsorbent, and optimizes one end of the support plate into an arc structure, so that it can cooperate well with the limiting groove of the dewar shell.

A process for manufacturing a combined microelectromechanical device envisages: forming, in a sensor wafer, at least a first and a second microelectromechanical structures, at a main surface; forming, in a cap wafer, at least a first and a second cavities, at a respective main surface; forming a getter region inside the first cavity; bonding the main surfaces of the sensor and cap wafers by means of a bonding region, to define a first and a second hermetic environments for the microelectromechanical structures at different pressure values. A raised frame is formed, before the bonding step, in such a way as to be located around the first cavity; the bonding region determines the bonding of the sensor and cap wafers at the raised frame and the definition of the first hermetic environment associated with the first cavity, in a time interval prior to hermetic closure of the second cavity.

Metal getters in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel is configured to discharge a metal halide vapor through the outlet. The vaporizer comprises a metal getter located within the vessel between the inlet and the outlet. When an oxygen-containing species is present within the vessel, an impurity content of the metal halide vapor that is discharged from the vessel is less than an impurity content of a precursor vapor that is discharged from a vessel without the metal getter.

The invention discloses a method and equipment for detecting a getter of a ring laser based on machine vision, and belongs to the technical field of laser gyroscope detection. According to the method, the thin film image of the getter is collected, the consumption condition of the getter is recognized by combining the color fading property of the getter after the getter reacts with the impurity gas, meanwhile, the getter parameter and the activation parameter of the ring laser are calculated according to the working condition data of the ring laser during standing and working, and the residual gas capacity of the getter is predicted based on the activation parameter. And combining the suction parameters to fit a suction characteristic function of the ring laser, and further predicting the remaining working time of the getter. According to the method, products with unqualified getter allowance can be effectively screened out, and the application reliability of the ring laser in the fields of aviation, spaceflight and the like is improved.

The invention relates to a method and a device for plating non-evaporable getter films in a high-length-diameter-ratio small-aperture pipeline in batches, the device comprises an upper cavity and a lower cavity, at least four groups of pipe assemblies communicating the upper cavity with the lower cavity are arranged between the upper cavity and the lower cavity, the pipe assemblies are uniformly arranged along the circumferential direction, and the upper cavity and the lower cavity are communicated with each other through the pipe assemblies. Each pipe assembly comprises an upper transition corrugated pipe, an electrode, an upper transition pipe, a pipeline to be coated, a lower transition pipe and a lower transition corrugated pipe which are sequentially communicated from top to bottom; an electrode threaded rod in the electrode is connected with the upper end of a titanium-zirconium-vanadium alloy target through a connector, the lower end of the titanium-zirconium-vanadium alloy target is an overhanging end, and the titanium-zirconium-vanadium alloy target sequentially penetrates through the upper transition pipe, the pipeline to be coated, the lower transition pipe and the lower transition corrugated pipe. And the solenoid is sleeved on the pipe assembly. According to the technical scheme, the quality and performance of the non-evaporable getter film are improved, and meanwhile the batch preparation efficiency is improved.

The present application discloses a pixel-level packaging structure for an uncooled infrared detector and a manufacturing method thereof, comprising an integrated circuit substrate and a pixel device disposed on the upper surface of the integrated circuit substrate; the pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the air-intake unit comprising a getter layer disposed on the upper surface of the integrated circuit substrate, a support layer, and a sealing layer disposed on the upper surface of the support layer; the cavity in the air-intake unit is connected to the cavity in the pixel unit; or the pixel device comprises a getter layer and a reflective layer disposed on the upper surface of the integrated circuit substrate, and an infrared sensor unit disposed above and corresponding to the reflective layer. The pixel device comprises a pixel unit and an air-intake unit disposed on one side of the pixel unit, the getter layer not being disposed in the pixel unit; or the getter layer in the pixel device does not correspond to the infrared sensor unit, thereby avoiding the influence of the getter layer on the infrared sensor unit and improving the performance of the uncooled infrared detector.

The invention discloses a miniaturized ultra-stable cavity system. An outer layer vacuum device comprises a copper pipe, a feed-through, a titanium vacuum cavity, a vacuum cavity base, a vacuum getter, a left vacuum flange observation window and a right vacuum flange observation window; a heat shielding aluminum cover is arranged in the titanium vacuum cavity, and a ceramic cylindrical fixing seat in the heat shielding aluminum cover and the cylindrical ULE ultra-stable cavity form a composite ultra-stable cavity structure; the ultra-stable cavity system provided by the invention can provide a miniaturized optical reference with better medium and short-term frequency stability for an integrated low-noise photo-generated microwave source, a transportable atomic optical clock, a satellite-borne laser and the like, and has very important engineering application value.

The invention relates to the field of semiconductor MEMS (Micro Electro Mechanical System) devices, and discloses a medium-high-entropy alloy air suction target material which is composed of a main element A, an element C and an element B. The content of the main element A is 25-40 at%, the content of the element B is 30-45 at%, and the content of the element C is 30-45 at%; the formula equation is as follows: A < 25-40 > B < 30-45 > C < 30-45 >; the main element A is selected from one or two of V and Co; the element C is selected from one or more of Fe, Pr, Y, Gd, Nd, Er, Sm and Ce. And the element B is selected from one or two of Ti and Zr. According to the invention, the problem of serious contradiction between the air suction performance and the mechanical property of the current semiconductor MEMS sensor packaging material is solved by utilizing the advantages of rich or multi-principal-element alloy, high mixing entropy and the like in the medium-high-entropy alloy.

The invention discloses an intracavity element-free high-frequency stability compact frequency-stabilized laser, which is characterized in that three sections of capillary tubes, namely a first capillary tube, a second capillary tube and a third capillary tube, are arranged on a microcrystalline glass block; the first capillary tube is located at the top, one end of the first capillary tube is communicated with the second capillary tube, a planar high-reflection sheet is arranged at the corresponding position of the microcrystalline glass block at the communication position, and the other end of the second capillary tube is communicated with the slotted sheet; the other end part of the first capillary tube is communicated with a third capillary tube, a frequency-stabilized optical detector is arranged at a corresponding position on the microcrystalline glass block at the communication part, and the other end of the third capillary tube is communicated with a planar output sheet; the slotted vane and the planar output piece form an optical resonant cavity; the capillary tube is filled with He-Ne gas, and high voltage is applied between the cathode and the anode to excite the gas to discharge; the getter is placed in a top end groove of the glass ceramic block; and the piezoelectric ceramic is arranged on the slotted vane. The invention has the advantages of simple and compact structure, convenience in processing, good applicability, high reliability and the like.

The utility model discloses a novel environment-friendly gas insulated looped network box which comprises a box body. The box doors are arranged on the front face of the box body, the box doors are all hinged to the box body, strip-shaped plates are hinged to one sides of the box doors, and gaps between the strip-shaped plates and the box doors are very small; the first U-shaped pipe and the second U-shaped pipe are arranged on the side edges of the front face and the back face of the box body, the middle of the top end of the first U-shaped pipe and the middle of the top end of the second U-shaped pipe are communicated through a guide pipe, double air suction pumps are arranged in the middle of the guide pipe, and when the box door is opened for overhauling, the box door is opened to drive the strip-shaped plate to press the pressing switch, so that the time delay switch works; after a certain period of time, the double getter pumps are driven to generate ultra-large suction force which is transmitted into the first U-shaped pipe and the second U-shaped pipe, so that gas on the side of the box body is sucked back into the sleeve through the gas holes, the gas is detected by the nitrogen detector, whether leakage occurs or not is judged, and detection can also be performed by manually pressing the pressing switch when maintenance is not performed.

The utility model discloses a getter film with high initial outbreak rate and lasting moisture absorption rate for a perovskite battery, a support framework layer is an expanded polytetrafluoroethylene microporous film layer, and an active layer is a getter active layer formed by infiltrating a getter into a pore structure of the expanded polytetrafluoroethylene microporous film layer. The composite layer is a getter composite layer formed on at least one side surface of the expanded polytetrafluoroethylene microporous membrane layer through a getter. Through the above mode, the periphery of the active material layer of the perovskite cell in a service environment can be kept in a vacuum state for a long time, and the perovskite cell is ensured to be in a high photoelectric conversion efficiency and a stable state for a long time; the getter film is coated with a back adhesive layer and is non-corrosive, and the getter film can be directly pasted on a glass cover plate of a perovskite cell or on silver, aluminum and copper electrodes for packaging after the release film is uncovered during use; and the initial explosion rate is high, and moisture and oxygen can be quickly absorbed in the packaging cavity within two hours, so that a vacuum state is achieved.