2144 results about "Getter" patented technology

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Disclosed herein are organic electronic devices that are encapsulated at least in part by adsorbent-loaded transfer adhesives. The adsorbent material may be a dessicant and/or a getterer. The adsorbent-loaded transfer adhesive may form a gasket around the periphery of the device, or may cover the entire device and its periphery. An encapsulating lid covers the device.

A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10⁶ A/cm² is disclosed. The MTJ has a Co₆₀Fe₂₀B₂₀/MgO/Co₆₀Fe₂₀B₂₀ configuration where the CoFeB AP1 pinned and free layers are amorphous and the crystalline MgO tunnel barrier is formed by a ROX or NOX process. The capping layer preferably is a Hf/Ru composite where the lower Hf layer serves as an excellent oxygen getter material to reduce the magnetic “dead layer” at the free layer/capping layer interface and thereby increase dR/R, and lower He and Jc. The annealing temperature is lowered to about 280° C. to give a smoother CoFeB/MgO interface and a smaller offset field than with a 350° C. annealing. In a second embodiment, the AP1 layer has a CoFeB/CoFe configuration wherein the lower CoFeB layer is amorphous and the upper CoFe layer is crystalline to further improve dR/R and lower RA to ≦10 ohm/μm².

A highly sensitive silicon micro-machined sensor package is provided for use in a micro-g environment that can also resist high shock in excess of 5000 g. The sensor is provided to measure acceleration in cooperation with associated electronics which are required to have electrical contact with sensor elements. The sensor is sealed in a high vacuum environment, and is arranged and designed to be free of temperature induced stress to the sensor. The sensor die package assembly comprises a silicon micro-machined sensor die, a ceramic package, two contact springs, a shorting clip, solder preform, a metal lid and a getter foil for ensuring a good vacuum for an extended period. The sensor die comprises a moving mass with eight supporting flexures on both sides of the proof mass. The proof mass's movement is protected on both sides by a top and a bottom cap. Acceleration applied to the package and the die causes the proof mass to move vertically in relation with the adjacent caps. The changes in distance between the proof mass and the caps in turn generate a change in an electrical signal which corresponds to the capacitance changes between the gaps. The sensor die package arrangement provides that the sensor die be secured within an evacuated ceramic case. Electrical connections made between external contacts of the case and contacts of the sensor die within the case are made through conductive springs, thereby minimizing materials in the interior of the case which would outgass in the vacuum environment.

A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.

A method for sealing an electronic device includes providing an electronic device on a substrate, providing a lid, activating a getter material in an environment substantially free of contaminants, applying a sealing material to at least a portion of the lid, and attaching the substrate and the lid in an inert environment. The time elapsed between activating the getter material and attaching the substrate and the lid is less than 20 minutes. A sealing assembly for an electronic device includes an activation tool for activating a getter material, a dispensing tool for dispensing a sealing material, and an encapsulation tool for sealing the electronic device. The sealing assembly is in an environment substantially free of contaminants.

PCT No. PCT/JP92/00149 Sec. 371 Date Oct. 14, 1992 Sec. 102(e) Date Oct. 14, 1992 PCT Filed Feb. 14, 1992 PCT Pub. No. WO92/14542 PCT Pub. Date Sep. 3, 1992A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.

The invention discloses a nanometer multiple-layer composite thermal insulation material and a preparation method thereof. The nanometer multiple-layer thermal insulation composite material is formed by alternatively overlapping an infrared reflecting screen and a spacer; the ratio of total layer amounts n of the infrared reflecting screens and the spacers to the total thickness of the nanometer multiple-layer composite thermal insulation material is 0.5-4; the infrared reflecting screen is a metal foil or a metal plated foil; the spacer is a thermostability nanometer porous aerogel composite thermal insulation material; the infrared reflecting screen and the spacer are combined by being adhered with thermostability adhesives or in puncturing connection by thermostability sewing threads. The invention also comprises the preparation method of the nanometer multiple-layer composite thermal insulation material. The nanometer multiple-layer composite thermal insulation material of the invention has low density, favorable mechanical property and favorable high-temperature thermal insulation property, lowers requirements on the vacuum degree by a VIP plate when being used as vacuum thermal insulation plate core materials, does not need getter and can satisfy harsh high-efficiency thermal insulation using requirements on materials by aviation, aerospace and civil fields. The method of the invention can prepare thermal insulation material members with large size and complex shape.

Embodiments of the present invention are directed to apparatuses and methods of making a micromachined resonator gyroscope, e.g. a disc resonator gyro (DRG), including one or more of the following novel features. Embodiments of the invention may comprise a triple-wafer stack gyroscope with an all fused quartz (or all silicon) construction for an electrical baseplate, resonator and vacuum cap. This can yield superior thermal stability over prior art designs. A typical resonator embodiment may include a centrally anchored disc with high aspect-ratio in-plane electrostatic drive and sense electrodes to create large capacitance. A silicon sacrificial layer may be employed for attaching a quartz resonator wafer to a quartz handle wafer for high aspect-ratio etching. In addition, embodiments of the invention may comprise a low thermal stress, wafer-level vacuum packaged gyroscope with on-chip getter. An ultra-thin conductive layer deposited on the quartz resonator may also be utilized for high Q.

An OLED device structure and a method of making the same. The OLED device structure comprises (a) a substrate, (b) an OLED display area comprising one or more active pixels disposed over the substrate, wherein each of the one or more active pixels comprises an anode region, a cathode region and a light-emitting region, (c) a cover over the OLED display area, wherein the cover permits transmission of light from the one or more active pixels and an outer environment, and wherein the cover and the substrate cooperate to restrict transmission of oxygen and water vapor from the outer environment to the OLED display area, and (d) a patterned getter layer disposed between the substrate and the cover, wherein the patterned getter layer is configured so as to substantially avoid obstructing the transmission of light from the one or more pixels. Also disclosed are a flexible OLED device and an organic optoelectronic device structures having related configurations.

The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.

A method for improving the toughness of a CBN product made by a high temperature/high pressure (HP/HT) process commences by forming a blend of an oxygen getter and CBN product-forming feedstock. The blend is subjected to a CBN high temperature/high pressure (HP/HT) process for forming a CBN product. The amount of oxygen getter in the blend is sufficient to improve the toughness of the CBN product. The resulting CBN product desirably has an oxygen content of less than about 300 ppm. Oxygen getters include Al, Si, and Ti. The HP/HT process is conducted in the absence or presence of catalytic materials.

A flat-panel field emission display comprises a luminescent faceplate, a rigid backplate, and an interposed or sandwiched emitter or cathode plate. A positioning spacer or connector ridge is formed on the rear surface of the faceplate to space the cathode plate a fixed distance behind the faceplate. A peripheral seal is formed between the faceplate and the backplate. The faceplate, backplate, and peripheral seal define an evacuated internal space which contains the cathode plate. The backplate is spaced behind the cathode plate to create a rearward vacuum space in which a getter is located.

The invention provides a vacuum insulation panel to which moisture and gas do not easily adsorb while it is being processed or being in storage in an unfinished state. The vacuum insulation panel includes a core provided with air circulation, a getter material which adsorbs moisture and gas from the core, an inner film bag which accommodates the core and the getter material, and an outer barrier bag which accommodates the inner film bag. The getter material is filled in an incision provided on the surface of the core. To prevent the getter material from getting out of the incision, the opening of the incision is narrowed by evacuating air from the interior of the inner film bag and, concurrently, compressing the inner film bag and the core.

A metal sealed organic light emitting diode device comprising a lid, containing a recessed portion to accommodate large quantity of getter/dessicant, a band of metal stack at the perimeter over which is laid a band of low temperature melting solder alloy, pre-tinned subsequently, and a substrate. The substrate containing organic light emitting diode at the central area with a band of metal stack at the perimeter. The lid and the substrate are placed together in substantial alignment such that the pre-tinned low melting solder band of the lid contacts the metal stack of the substrate and thermally sealed in a controlled atmosphere. Multiples of substrates are sealed with a single lid containing multiplicity of recessed portions with multi-segmented metal stack and pre-tinned solder band to derive a large area device.

A microdevice that comprises a device microstructure (38) and vent channel (34) in a wafer (14) that is sandwiched between a substrate (10) and a cap (16). The cap (16) and substrate (10) have recesses (41, 21) around the microstructure (22) to define a cavity. A vent (25) is connected to the vent channel (34) and subsequently to the cavity. The vent (25) is used to evacuate and seal the microstructure (38) in the cavity. A getter layer (32) can be used to maintain the cavity vacuum. An electrical connection can be provided through the vent (25), vent channel (34) and cavity to the getter (32) to electrically ground the getter layer (32).

An implantable medical device (IMD) including a nonhermetic battery is described. The IMD includes components and a power source module that includes the nonhermetic battery. The IMD also includes a barrier to substantially impede movement of substances from the nonhermetic battery to the components. The barrier may include a hermetic feedthrough, a gel, a polymer, or a solid electrolyte within the nonhermetic battery, and a seal member. The barrier may also be a material that encapsulates the nonhermetic battery and a getter within the IMD. In some embodiments, the IMD comprises a modular IMD including an interconnect member. In that case, the barrier may include a material that fills at least a portion of a void defined by the interconnect member. A length and a cross-sectional area of the interconnect member may also act as a barrier.