62results about How to "High Q" patented technology

A notch filter with a high Q factor, which is integrated with a first and a second cascoded LNA, is totally contained on an integrated chip. The notch filter, comprising two Q-enhancement circuits, is coupled to the second differential LNA. The two Q-enhancement circuits are combined to generate sufficient negative impedance to compensate for the loss in the on-chip low Q inductors. To improve the image rejection of the notch filter in a wide frequency band, the notch filter uses an automatic current tuning circuit which consists of an analog multiplier and fixed and voltage controlled current sources. Furthermore, by modifying the connection and location of the tunable varactor, another wideband tunable notch filter is implemented. The notch filter can be applied in all current wireless receiver systems.

A highly compact inductor formed on opposite faces of a dielectric substrate. Sets of parallel spaced conductive traces formed on the opposite faces of the substrate are interconnected by metallized vias through the substrate, in such a way as to form a continuous spiral conductive path. The inductor is preferably formed as two closely adjacent segments, each with conductive traces on each face of the substrate and each having metallized vias interconnecting the conductive traces. The segments are electrically connected in series and produce a magnetic field that extends through each segment in opposite directions and is closely coupled from one segment to the other. The inductor is, therefore, electromagnetically similar to a wire-wound toroidal inductor, providing high inductance and contourable Q values, but is highly compact, especially in the z-axis direction normal to the substrate.

The invention includes a wireless communication circuit and a method of communicating with wireless signals that feature a tank circuit having an inductor connected in parallel with a capacitor circuit. The capacitor circuit includes a pair of capacitors coupled in series. Each of the capacitors is connected in common to ground and has a capacitive value associated. A feedback network is connected to selectively bias the tank circuit to produce a signal having an amplitude. The amplitude of the signal is a function of a ratio of the capacitive values associated with the capacitor circuit. The frequency of the signal is defined by the inductor and the capacitor circuit. The tank circuit is multifunctional in that it may be biased to function as a transmitter and a receiver.

The present disclosure relates to a multi-band RF power amplifier (PA) module, which is used to receive, filter, and amplify a first RF input signal to provide a first RF output signal using a first tunable bandpass and notch filter. The multi-band RF PA module may include a supporting substrate having at least a first inductive element that provides a first portion of the first tunable bandpass and notch filter. Further, the multi-band RF PA module may include at least a first semiconductor die, which is attached to the supporting substrate and provides a second portion of the first tunable bandpass and notch filter. A transceiver module may provide the first RF input signal.

Disclosed herein is an angular velocity measuring device including: first and second oscillators elastically supported on a substrate; an elastic connecting beam elastically connecting the first and the second oscillator; and an oscillating means for oscillating the first and the second oscillator for differential oscillation, wherein a viscous force generating means for suppressing in-phase oscillation of the first and the second oscillator is incorporated into the elastic connecting beam.

An inductor of the present invention includes a plurality of insulating layers being stacked and coil patterns respectively provided on predetermined layers of the insulating layers. The coil patterns are provided on at least two of the insulating layers, and electrically connected to each other. With this arrangement, it is possible to improve Q of the inductor without increasing the size of the inductor.

The invention discloses a nickel-zinc soft magnetic ferrite material and a preparation method thereof. The material comprises the following compositions in mol percentage: 45 to 50 mol percent of ferric oxide Fe2O3, 20 to 26 mol percent of zinc oxide ZnO, 12 to 17 mol percent of nickel protoxide NiO, 5 to 10 mol percent of copper oxide CuO, and 3 to 10 mol percent of magnesium oxide MgO. The preparation method comprises the following steps: treating raw materials, proportioning, primary ball milling, drying, powdering or screening, preburning, secondary proportioning, secondary ball milling, secondary drying and secondary powdering or screening; the preburning condition is to carry out pre-synthesis in an air furnace at a temperature of between 900 and 980 DEG C, and the sintering temperature is between 1,050 and 1,100 DEG C. The nickel-zinc soft magnetic ferrite material has the characteristics of property of high Q, high frequency, high TC, high Bm and low cost.

An acoustic wave switch includes a substrate with an acoustic wave cavity formed therein such that the mass per unit area of the acoustic cavity is greater than the mass per unit area of the substrate adjacent the cavity. A transducer is mounted on the acoustic cavity for generating an acoustic wave that is substantially trapped in the cavity. A touch on the touch surface of the acoustic wave cavity absorbs acoustic wave energy and produces a detectable change in the impedance of the transducer. The acoustic wave switch has a high Q so as to enable a touch to be detected by extremely simple, low-cost circuitry. The acoustic wave switch of the present invention is rugged, explosion proof, operates in the presence of liquids and other contaminants, has a low power consumption and can be incorporated and integrally formed in a wall of a housing for a device.

An acoustic wave switch includes a substrate with an acoustic wave cavity formed therein such that the mass per unit area of the acoustic cavity is greater than the mass per unit area of the substrate adjacent the cavity. A transducer is mounted on the acoustic cavity for generating an acoustic wave that is substantially trapped in the cavity. A touch on the touch surface of the acoustic wave cavity absorbs acoustic wave energy and produces a detectable change in the impedance of the transducer. The acoustic wave switch has a high Q so as to enable a touch to be detected by extremely simple, low-cost circuitry. The acoustic wave switch of the present invention is rugged, explosion proof, operates in the presence of liquids and other contaminants, has a low power consumption and can be incorporated and integrally formed in a wall of a housing for a device.

A glass-ceramic is provided having a thermal expansion coefficient in a range of 4.0 to 8.5 ppm/° C., a dielectric constant in a range of 5-7 and a Quality factor Q of at least 400. The glass-ceramic consists essentially of SiO₂ in a range of 40-55 wt %, Al₂O₃ in a range of 7-22 wt %, MgO in a range of 6 to less than 26 wt %, and at least one of BaO in an amount up to 35 wt %, SrO in an amount up to 37 wt % and ZnO in an amount up to 17 wt %. An electronic package is also provided, including one of a metal and sintered ceramic base member and a glass-ceramic substrate bonded to the base member.

A circuit device comprises at least one under bump metal formed on a surface of a substrate and a connection bump provided on the uppermost layer of the under bump metal. At least one laminated metallic film is formed on part of or all of wiring pattern formed on the surface of the substrate, so that the laminated metallic film formed is consisted of the same material and also the same thickness as the under bump metal.

Disclosed are optical resonators having low OH content in at least the near-surface region and a process for making low OH glass article by chlorine treatment of consolidated glass of the article. Cl₂ gas was used to remove OH from depth as deep as 350 μm from the surface of the consolidated glass. The process can be used for treating flame-polished preformed optical resonator disks. A new process involving hot pressing or thermal reflowing for making planar optical resonator disks without the use of flame polishing is also disclosed.

An improved integrated LC resonator and methods for making and using the same are disclosed. The resonator includes (i) a first capacitor plate; (ii) an inductor over and in electrical communication with the first capacitor plate; and (iii) a second capacitor plate over and in electrical communication with the inductor. The method of making includes sequentially forming a first capacitor plate, a first dielectric layer thereon, a first via and an inductor, a second dielectric layer on the inductor, and a second via and a second capacitor plate. Each of the capacitor plates and the inductor are generally formed in different integrated circuit layers (for example, different metallization layers). Embodiments of the present invention can advantageously provide an integrated LC resonator tank having: (i) relatively high Q by reducing or minimizing parasitic effects; and (ii) relatively high shielding from the semiconductor substrate.

A parallel-trace spiral coil comprising a plurality of electrically-isolated, parallel connected metal traces with high Q factor for use in bio-medical implants.

A zero or near zero IF frequency changer for use in a digital tuner comprises multipliers which receive the RF input signal from an input. The multipliers receive quadrature local oscillator signals from a first oscillator of an arrangement which comprises first and second phase-locked loops. The first phase-locked loop comprises a programmable divider, a comparator and a control loop so that the first oscillator is phase-locked to a second oscillator. A second phase-locked loop comprises the second oscillator and a synthesizer containing a reference oscillator to which the second oscillator is phase-locked. The output frequency of the second oscillator is in a frequency band which is outside the RF input frequency band of the frequency changer.