74results about How to "High quality factor" patented technology

The invention discloses a preparation method of a magic angle nano-cavity and a topological body cavity based on a quantum dot single photon source, and the method comprises the steps: carrying out the preprocessing of a substrate, and enabling the substrate to comprise a quantum dot layer, a substrate layer, and a sacrificial layer located between the quantum dot layer and the substrate layer; treating the pretreated substrate by adopting oxygen plasma; photoresist is spin-coated on the surface of the quantum dot layer of the substrate, exposure and development are carried out, and a pattern is formed on the surface of the photoresist; transferring the pattern on the photoresist to the quantum dot layer through etching; and removing the sacrificial layer by wet etching to prepare two photonic crystal cavities, namely a magic angle nano cavity and a topological body cavity. Through fine electron beam exposure dose control, precise inductively coupled plasma gas component and etching rate control and appropriate corrosive liquid concentration and time control, a high-stability and high-repeatability photonic crystal suspension cavity structure, namely a magic angle nano cavity and a topological body cavity, with a line width of 30-50 nm is realized.

The invention provides an iron-silicon-aluminum magnetic powder core and a preparation method and application thereof. The Fe-Si-Al magnetic powder core comprises a Fe-Si-Al magnetic powder base body and a coating layer coating the surface of Fe-Si-Al magnetic powder. And the coating layer comprises silicon dioxide and aluminum phosphate. According to the Fe-Si-Al magnetic powder core provided by the invention, the silicon dioxide and the aluminum phosphate are used as the mixed insulating coating layer, so that the resistivity of the Fe-Si-Al magnetic powder core is increased, the eddy-current loss among particles is effectively reduced, meanwhile, the maximum forming density of the material is ensured, and a relatively high saturation magnetic flux density Bs is obtained, so that a high direct-current superposition characteristic is obtained; and the aim of giving consideration to low loss and high direct current superposition characteristics is fulfilled.

The invention discloses a magnetic tuning F-type voltage-controlled oscillator based on multi-coil coupling, and the oscillator comprises an F-type oscillation loop which is used for generating an oscillation signal with a required frequency, and carrying out the harmonic adjustment of a frequency spectrum of the oscillation signal; the magnetic tuning transformer is used for adjusting the voltage-current relationship of the oscillation signal in the F-type oscillation loop, changing the equivalent inductance value in the F-type oscillation loop and further adjusting the oscillation frequency; the common-mode resonant capacitor is used for determining common-mode capacitance in the F-type oscillation loop and further reducing the phase noise at the second harmonic through common-mode resonance; the F-class voltage-controlled oscillator is adopted to enhance harmonic waves to achieve frequency tripling to generate millimeter wave oscillation signals, a magnetic tuning mode is adopted to replace a varactor with a low quality factor to control and change resonant frequency, and compared with a traditional LC voltage-controlled oscillator, the voltage-controlled oscillator can obtain lower phase noise and a higher quality factor, and the performance of the voltage-controlled oscillator is improved. And an additional frequency multiplier is omitted for the generation of the millimeter wave oscillation signal.

A horizontal double-ball quasi-optical cavity testing device for measuring the electromagnetic performance of a thin film material relates to the field of electromagnetic characteristic parameter testing, in particular to a quasi-optical cavity method testing system, and comprises a vector network analyzer (1), a frequency doubling module (2), a waveguide (3), a quasi-optical cavity (4), a sample clamp (5), a bidirectional transmission screw rod (6), a shielding frame (7), a displacement platform (8), a base (9) and a supporting block (10). The quasi-optical cavity (4) is of a double-spherical-cavity structure, is connected with the vector network analyzer (1) in a horizontal manner, and tests a sample by utilizing a resonance method; the sample clamp (5) adjusts the position of the sample by using a displacement platform (8); the shielding frame (7) can restrain miscellaneous molds, and the restraining effect is adjusted through the two-way transmission lead screw (6). The device has the advantages that the double-ball-cavity sensitivity is high, and the device is suitable for thin-film material testing; the horizontal structure is beneficial to connection of the vector network analyzer and the quasi-optical cavity; the double-ball cavity can measure the electromagnetic performance of the thin film material according to different odd and even modes.

The invention relates to the technical field of piezoelectric ceramic materials, in particular to potassium-sodium niobate-based lead-free ceramic suitable for high-power devices and a preparation method, the chemical general formula of the potassium-sodium niobate-based lead-free ceramic is 0.96 (K < 0.45 > Na < 0.55 >) NbO < 3-0.04 > Bi < 0.5 + x > Na < 0.5 > ZrO < 3-0.005 > CuO, and x is one of 0, 0.03, 0.05, 0.08 and 0.10. According to the potassium-sodium niobate-based lead-free ceramic suitable for the high-power device and the preparation method, the potassium-sodium niobate-based lead-free ceramic has excellent comprehensive electrical properties including high piezoelectric constant, high quality factor, high Curie temperature and low dielectric loss, and is suitable for being applied to high-power electronic equipment.

The present invention provides a surface acoustic wave resonator and a manufacturing method thereof, and a surface acoustic wave filter, which have high quality factor Q, high electromechanical coupling coefficient, good TCF characteristics and power resistance. The surface acoustic wave resonator of the present invention comprises: a composite piezoelectric substrate, the composite piezoelectric substrate having: an LGS base layer, the LGS base layer is formed of single crystal LGS, and a GaN piezoelectric layer formed on the LGS base layer, the thickness of the GaN piezoelectric layer does not exceed 20 times the wavelength of the acoustic wave propagating in the surface acoustic wave resonator; and interdigital electrodes formed on the GaN piezoelectric layer.

This invention discloses a tunable quasi-continuous bound-state refractive index sensor based on a lithium niobate metasurface, comprising a bilayer lithium niobate pillar metasurface and a silicon dioxide substrate. By constructing an in-plane displacement of the upper lithium niobate pillar relative to the lower lithium niobate pillar, the vertical symmetry of the structure is broken, causing the symmetry-protected continuous bound state to degenerate into an observable quasi-continuous bound state, generating a Fano resonance. The electro-optic effect of lithium niobate is used to achieve continuous tuning of the resonance frequency; the refractive index of lithium niobate is changed by applying an external voltage, causing a shift in the resonance frequency. In refractive index sensing, the sensor can detect environmental refractive index changes as low as 0.005 RIU. This invention proposes a novel tunable quasi-continuous bound-state sensor with high sensitivity and quality factor in the near-infrared band, overcoming the limitation of the non-tunable resonance frequency of traditional quasi-continuous bound-state refractive index sensors, and improving the flexibility and applicability for molecular detection and dynamic spectral manipulation in the biomedical field.

The invention discloses a satellite internet integrated plane millimeter wave oscillator based on a glass-based material, and belongs to the field of microwave circuit design. The oscillator comprises a DGS resonance module based on a glass substrate, two paths of same sub-oscillator modules, duplexer modules and a combiner module, wherein the two paths of sub-oscillator modules share the same DGS resonance module based on the glass substrate, and outputs of the two paths of sub-oscillator modules are respectively connected with the two duplexer modules; and the output with higher frequency is synthesized by the combiner module to form total output. The DGS resonance module adopts a glass-based process and has the advantages of miniaturization, low loss and low cost; the two sub-oscillators share one resonator module, strong coupling is achieved, and phase noise can be optimized; the duplexer module separates fundamental waves from second harmonics, so that good matching can be realized, and spurious suppression is improved. The LED lamp is easy to process, low in cost, good in heat dissipation performance and capable of effectively achieving miniaturization and integration.

The invention provides an oscillating circuit of an MEMS resonator. A bias circuit provides direct current bias voltage and tail current source bias voltage of PMOS cross coupling pair transistors for a main oscillator core circuit; therefore, each branch in the main oscillator core circuit can be connected in series with only three transistors, and the three transistors can realize the function of generating oscillation sine wave signals by the main oscillator core circuit without stacking more transistors; the number of series transistors is small, the working voltage of the main oscillator core circuit is correspondingly reduced, the main oscillator core circuit can work in a low power supply voltage environment, the power consumption of the main oscillator core circuit is reduced, and in other words, the oscillation circuit of the MEMS resonator provided by the invention can improve the reliability of the MEMS resonator on the premise of ensuring low phase noise and providing the same negative resistance. Therefore, the power consumption of the oscillator is reduced, and the quality factor of the oscillator is improved.

The invention relates to a filter and an electronic device. The filter comprises a substrate, a first resonator, a second resonator, a third resonator and a fourth resonator, and further comprises a capacitive structure, a first transmission end coupled with the first resonator, and a second transmission end coupled with the second resonator. A plurality of coupling paths are formed among the first capacitive structure, the second capacitive structure, the third capacitive structure and the resonator, so that a plurality of out-of-band transmission zeros can be realized, and the frequency selection performance is excellent. The internal layout of the filter is very compact, and the miniaturization performance is outstanding.

The invention provides a method for automatically generating a pixelated resonant cavity of an oscillator based on knowledge-driven reverse design. The method comprises the following steps: determining a topological region range of VCO resonant cavity design; determining a reverse design target; a priori knowledge driving pixel matrix drawing strategy is established, pixelated inductor topological structure drawing is completed in the topological region based on the drawing strategy, and a primary pixelated inductor topological structure quality factor and a secondary pixelated inductor topological structure quality factor are calculated; according to a reverse design target, searching a Q value of a primary pixelated inductance topological structure from a binary n * n matrix assembly at a given target frequency, and meanwhile, achieving a maximized optimal solution to obtain an optimal pixel topological structure; and constructing the voltage-controlled oscillator in combination with the optimal pixel topological structure. According to the method, batch automatic simulation and optimization of the optimal resonant cavity structure can be realized, and compared with manual design, the time cost is saved, and meanwhile, the performance is further improved.

A filter circuit and an adjustable inductor thereof, which relates to a filter circuit, includes a power supply end, an output end, a power supply line and an adjustable inductor. The power supply end is used to receive an operating power supply. The output end is used to output the operating power supply. The power supply line is coupled between the power supply end and the output end. The adjustable inductor is electrically connected between the power supply end and a ground end and used to eliminate noise on the power supply line. The adjustable inductor includes a first transducer and a second transducer. The first transducer and the second transducer have opposite transconductance phases, and the second transducer is electrically connected between two ends of the first transducer.

The present invention discloses an isothiocyanato trans-cyclohexylbiphenyl liquid crystal composition and its application. The liquid crystal composition uses an isothiocyanato trans-cyclohexylbiphenyl liquid crystal compound as the first component, and the first component contains at least one compound represented by structural formula (I): wherein R1 is selected from an alkyl group containing 1 to 10 carbon atoms or an alkyl group containing an alkenyl group; X1 to X8 are each independently selected from -H, -CH3, -F or -Cl. The liquid crystal composition also includes a second component, and three or more components among a third component, a fourth component and a fifth component. The birefringence value (Δn) of the liquid crystal composition of the present invention is greater than 0.37, and its microwave frequency insertion loss is reduced, and the dielectric loss value (tanδε r,max ) are all less than 0.0065, the phase modulation amount (τ) is greater than 0.30, and the quality factor (μ) is higher than 50.

The utility model provides a kind of refractive index sensing device based on titanium dioxide nanopore array, it is related to micro-nano photoelectronic technical field, the device includes titanium dioxide substrate, the titanium dioxide substrate surface is equipped with the nanopore array of square periodic arrangement;Gold film layer, the gold film layer covers in nanopore side wall and hole bottom surface;Silver film layer, the silver film layer covers in the upper surface of the titanium dioxide substrate, and the silver film layer with the gold film layer is connected at the orifice edge of nanopore;Silica protective layer, the silica protective layer covers in the exposed surface of the gold film layer, silver film layer, forms the package protection of metal layer.The utility model improves sensitivity and quality factor, and with low-cost material and local coating reduces cost and simplifies structure, also rely on protective layer to enhance stability, realize high performance and economy compatibility.

This invention relates to the field of fused silica wire drawing apparatus, and more specifically, to a multi-parameter joint feedback control method and system for drawing silica wire. This invention can jointly control the drawing speed, feeding speed and laser power of silica wire based on the diameter of the silica wire and the temperature of the heating zone, thereby achieving uniform stress distribution and diameter of the silica wire, effectively ensuring the repeatability of various parameters of the drawn silica wire, and further improving the fracture strength, quality factor and torsion balance system sensitivity of the silica wire.

The application provides a vertical resonant MEMS electric field sensor based on GIS-SOI-GOS, which is composed of GIS layer, SOI layer and GOS layer. The GIS layer comprises an upper driving electrode, an insulating ring, conductive silicon, a plurality of through holes and a groove on a glass layer, and the upper driving electrode is insulated from the conductive silicon through the insulating ring. The SOI layer is composed of a device layer, a buried oxygen layer and a substrate layer, the device layer is provided with a lower driving electrode, a shielding electrode, an induction electrode, an elastic beam and an anchor point, and the buried oxygen layer and the substrate layer are etched to have a hollow window, which together with the groove on the glass layer below the GIS provides a vertical vibration space for a movable structure. The GOS layer comprises an electric field induction cover plate and a glass layer provided with a window, and is used to establish an electric field induction channel. The application realizes integrated wafer-level preparation of a sensitive structure and vacuum packaging of the vertical resonant MEMS electric field sensor, and has the characteristics of high electric field induction efficiency, high quality factor, low driving voltage and the like.

The invention discloses a filter and an electronic device, and the filter comprises an element body which is formed by stacking one or more dielectric layers along a stacking direction; the multi-layer resonators comprise a first multi-layer resonator, a second multi-layer resonator and a third multi-layer resonator, and each multi-layer resonator comprises a first conductor structure, a second conductor structure, a third conductor structure and two path conductors; a first signal transmission end and a second signal transmission end, the first signal transmission end is coupled with the first multilayer resonator, and the second signal transmission end is coupled with the second multilayer resonator; and a coupling capacitive structure formed by coupling metalized electrodes formed inside the element body or on the surface of the element body, the coupling capacitive structure being disposed on a coupling path between the first multilayer resonator and the second multilayer resonator. The first multi-layer resonator is coupled with the second multi-layer resonator, and the third multi-layer resonator is simultaneously coupled with the first multi-layer resonator and the second multi-layer resonator.

This invention belongs to the field of electronic information materials technology, and discloses a (In 1 / 3 Mo 2 / 3 ) 5+ Cobalt niobate-doped microwave / terahertz dielectric ceramics and their preparation methods, with the general chemical formula CoNb 2‑x (In 1 / 3Mo 2 / 3 ) x O6, 0.01 ≤ x ≤ 0.03; This material has a single orthorhombic niobite structure with space group Pbcn. Its preparation method involves weighing and mixing CoO, Nb2O5, In2O3, and MoO3 raw materials through ball milling; drying the ball-milled slurry, adding a binder for granulation, sieving, and pressing into green bodies; sintering the green bodies after debinding to obtain the indium-molybdenum composite ion-doped cobalt niobate dielectric ceramic. It exhibits low dielectric loss and moderate dielectric constant in the terahertz band, filling the gap in existing research on the dielectric properties of cobalt niobate dielectric ceramics in the terahertz band. Furthermore, the material's preparation process is simple, the sintering temperature is moderate, it is compatible with existing ceramic processes, suitable for industrial production, and has broad application prospects in next-generation microwave / terahertz communication devices.

The present invention discloses a functional reconfigurable filter based on a multi-mode resonant cavity, comprising: an input resonant cavity, a first output resonant cavity, a second output resonant cavity, an input feed network, a filter matching network, and an output feed network; the input resonant cavity is located at the center of the filter; the first output resonant cavity is located at the adjacent left side of the input resonant cavity; the second output resonant cavity is located at the adjacent right side of the input resonant cavity; the input feed network is located at the bottom of the input resonant cavity; the filter matching network is located at the top of the input resonant cavity; the output feed network is connected to the first output resonant cavity and the second output resonant cavity. The present invention can switch between the functions of a two-way single-pole double-throw filter switch and a duplexer function by changing the conduction and cutoff of each diode control circuit, and can achieve a low loss of about 0.45dB in different functional states, and has a high isolation characteristic of more than 30dB in the passband.

The invention discloses a bismuth vanadate-based microwave dielectric ceramic material as well as a preparation method and application thereof. The ceramic material is (1-a-b-c-d-e-f) BiVO4-a (Li < 0.5 > Bi < 0.5 >) MoO4-b (Na < 0.5 > Bi < 0.5 >) MoO4-c (K < 0.5 > Bi < 0.5 >) MoO4-d (Li < 0.5 > La < 0.5 >) WO4-e (Li < 0.5 > Nd < 0.5 >) WO4-fBi (Fe < 1 / 3 > W < 2 / 3 >) O4. The preparation method comprises the steps of burdening, pre-sintering and sintering. The ceramic material can be sintered at low temperature without adding any sintering aid, has excellent dielectric constant, quality factor and resonance frequency temperature coefficient, and has wide application prospect.

The present invention discloses a liquid crystal compound, a composition and a high-frequency component with ultra-low dielectric loss, and the structural formula of the compound is shown in Formula I: wherein R is selected from an alkyl or alkoxy group having 1 to 10 carbon atoms, an alkenyl or alkenyloxy group having 2 to 10 carbon atoms, a fluorinated alkyl group, a fluorinated alkenyl group and a cycloalkyl group or an alkyl group substituted with a cycloalkyl group; X1 to X8 are methyl or hydrogen, and at least two substituents in X1 to X8 are methyl groups; Z1 and Z2 are respectively selected from a single bond, -C≡C-, -CH=CH-, -CF=CF- and -CH2CH2; Ring A is a benzene ring, cyclohexane or cyclohexene, wherein the hydrogen atoms on the benzene ring can also be substituted by methyl or halogen; n=0, 1 or 2. The liquid crystal compound and the composition of the present invention not only have ultra-low dielectric loss and high quality factor, but also have a wide nematic phase temperature range and low viscosity, and are suitable for fields such as filters, phase shifters, phased array radars and 5G communications.

The invention belongs to the technical field of phase-locked loops and filters, and particularly relates to an active loop filter for a low-jitter phase-locked loop. The pulse signal selection circuit and the signal transmission circuit provide stable input for the operational amplifier circuit; a resistance-capacitance circuit which cooperates with the operational amplifier circuit to realize frequency selection and amplitude control of the input signal; and the operational amplifier circuit is used for enhancing the amplitude of the output signal of the charge pump and converting the current signal into a stable voltage signal. The signal transmission circuit can reduce burrs and overshoot of signals, is good in voltage transmission characteristic, high in noise margin, high in anti-interference capability and low in power consumption, and can provide stable signals as input of an operational amplifier, so that the jitter performance of a phase-locked loop is optimized.

The application provides a dielectric resonator, comprising: a dielectric resonant cavity, the dielectric resonant cavity comprising a solid dielectric body and a metal plating layer wrapping an outer surface of the dielectric body; a capacitively loaded structure embedded in the dielectric body, and an end surface of the capacitively loaded structure being in contact with the metal plating layer of a surface of the dielectric resonant cavity, the capacitively loaded structure having a cross section with an area greater than that of the end surface; and a quality factor of the dielectric resonator being related to a volume-surface ratio of the capacitively loaded structure.

The invention discloses a three-frequency device based on a multi-layer printing technology, which comprises a ceramic dielectric body, a multi-layer circuit positioned in the ceramic dielectric body and an outer electrode positioned on the outer side wall of the ceramic dielectric body, the outer electrode comprises a common end, a low-frequency output end, an intermediate-frequency output end, a high-frequency output end, a first grounding end, a second grounding end, a third grounding end and a fourth grounding end; the multi-layer circuit comprises a low-frequency channel filter, an intermediate-frequency channel filter and a high-frequency channel filter which are formed by circuit elements; by integrating six equivalent inductors and nine equivalent capacitors in different frequency channels, the transmission and isolation characteristics of three filter channels in the triple-frequency device are realized. Compared with a traditional triple-frequency device, the technical scheme of the embodiment of the invention can realize mutual suppression between channels up to 20dB under the condition that the maximum insertion loss is 0.6 dB, 0.7 dB and 0.8 dB respectively, and has the characteristics of small size, low insertion loss, high isolation and interference resistance.

The present invention relates to the field of optical sensor technology, and in particular to a graphene stress optical sensor based on plasmon resonance, comprising a periodic graphene nanoribbon array and a substrate, wherein the periodic graphene nanoribbon array is placed on the substrate. Graphene plasmons have very strong spatial localization and field enhancement effect, can achieve high quality factors, and are very conducive to the realization of nanophotonic devices based on graphene plasmons in integrated photonics.

The invention relates to an environment-friendly scheelite high-entropy microwave dielectric ceramic material and a preparation method thereof, the structural expression of the ceramic material is Na0.5 (LaPrNdX) 0.5 / NMoO4, X is selected from at least two of Bi, Ce, Sm, Eu and Y, and N is the sum of the number of elements of La, Pr, Nd and X. The ceramic material simultaneously has at least five elements of La, Pr, Nd and X at one element position, high-entropy component design is realized, the dielectric property of the material can be directionally designed through component selection, the sintering temperature of the material is effectively reduced under the condition that a sintering aid is not added, and the performance of the material is improved. The microwave dielectric ceramic has a reasonable dielectric constant, a high quality factor and a near-zero temperature coefficient of resonance frequency, and shows excellent microwave dielectric properties.

The invention provides a mirror image rejection filter structure, an on-chip filter and a radio frequency transceiver. The mirror image rejection filter structure comprises an inductance structure, a capacitance switch array, a compensation circuit, a differential amplifier basic circuit and an RC calibration circuit, the RC calibration circuit is respectively connected with the capacitor switch array and the compensation circuit; the inductor structure comprises a first inductor and a second inductor which are connected to the two ends of the capacitor switch array respectively, and the inductor structure and the capacitor switch array form a series resonance network. A compensation circuit is connected in parallel to one side of the series resonance network to form a parallel structure; the parallel structure is arranged in the middle of the symmetrical transistor structure in the differential amplifier basic circuit; according to the structure, the suppression of the mirror image frequency point can be realized, the influence on the Q value is reduced as much as possible on the premise that the mirror image frequency point is adjustable, and meanwhile, the influence of the resonance network on the working frequency band is reduced through the compensation circuit.

The invention relates to the technical field of surface acoustic wave phononic crystals, and discloses a lithium tantalate single crystal film-based Left wave phononic crystal, the Left wave phononic crystal comprises a functional substrate and a piezoelectric film layer attached to the upper surface of the functional substrate, and the functional substrate comprises a plurality of layers of substrates with a high sound velocity or temperature compensation function; the piezoelectric thin film layer is a lithium tantalate single crystal thin film, and a micropore or microcolumn structure is constructed on the lithium tantalate single crystal thin film to form a phononic crystal. According to the invention, the phononic crystal is formed by constructing the micropores / columns on the lithium tantalate single crystal film, the structure is simple, preparation and integration are easy, a large-bandwidth Loff wave forbidden band can be provided, and technical support is provided for realizing a miniaturized and high-performance Loff wave device.

The application discloses a preparation method of a fluoride microwave dielectric ceramic material. NaF powder, NaCl powder and deionized water are heated and stirred, the stirred and dried powder is mixed with MgF2 powder through wet ball milling, drying and molding to obtain a ceramic body, and finally sintering at 600-750 DEG C obtains the fluoride microwave dielectric ceramic material. The application further discloses the fluoride microwave dielectric ceramic material prepared by the preparation method of the fluoride microwave dielectric ceramic material, and the main phase of the fluoride microwave dielectric ceramic material is NaF. The fluoride microwave dielectric ceramic material prepared by the application has the advantages of simple process, low preparation energy consumption, excellent material performance and suitability for being used as a key basic material of a microwave device for LTCC.

The invention discloses a multi-layer thin film structure, a preparation method and application of the multi-layer thin film structure. The multi-layer thin film structure comprises a single crystal substrate, an aluminum thin film and a tantalum thin film. The preparation method comprises the following steps: processing the surface of a single crystal substrate; epitaxially growing an aluminum film on the surface of the single crystal substrate; a tantalum film is epitaxially grown over the aluminum film. According to the multilayer film structure, the preparation method and the superconducting quantum bit device provided by the invention, the preparation method of a tantalum film is expanded, uniform growth of a large-area alpha-phase tantalum film is realized, the interface quality of the multilayer film is high, and the superconducting critical temperature is 2-4K. Meanwhile, the superconducting quantum bit device designed by the invention is long in de-coherence time, and the manufactured resonant cavity circuit has a high quality factor and can be applied to the fields of superconducting quantum bit devices, superconducting quantum computers and the like.