1929results about How to "High quality factor" patented technology

A resonator system for generating a radio frequency (RF) magnetic field in a volume under investigation of a magnetic resonance (MR) arrangement, comprises a number N of individual resonators (2) which surround the volume under investigation and which are each disposed on a flat dielectric substrate (1) around a z-axis, wherein the individual resonators (2) have windows (8) through each of which one individual RF field is generated in the volume under investigation in single operation of the individual resonators (2) and, through cooperation among the individual resonators (2), a useful RF field (7) is generated in the volume under investigation, wherein a remote RF field (6) is asymptotically generated far outside of the resonator system, and the spatial distribution of the useful RF field (7) is substantially mirror-symmetrical relative to a first plane A which contains the z-axis, and that of the asymptotic remote RF field (6) is substantially mirror-symmetrical relative to a second plane B which contains the z-axis, the useful RF field (7) extending substantially parallel to the first plane A in the volume under investigation, wherein the number of individual resonators (2) is N>4 and wherein, during operation of the resonator system at at least one point in time, the substrate plane of at least one individual resonator (2) subtends an angle of more than 40° with respect to the direction of the useful RF field (7) in the volume under investigation, and at least one further individual resonator (2) subtends an angle of less than 40° with respect to the direction of the useful RF field (7) in the volume under investigation, is characterized in that the first plane A is not rotated about the z-axis relative to the second plane B or is rotated by less than 360° / (N+1). The inventive resonator system realizes a resonator system with improved field homogeneity and full quadrature suitability, high quality factor and large efficiency using straightforward constructional measures.

A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors.

A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nanowires, nanoparticles, or other nanostructures of the first component. The second component may comprise an electrical insulator, such as an inorganic oxide, other electrical insulator, other low thermal conductivity material, voids, air-filled gaps, and the like. Additional components may be included, for example to improve mechanical properties. Quantum size effects within the nanostructured first component can advantageously modify the thermoelectric properties of the first component. In other examples, the second component may be a thermoelectric material, and additional components may be included.

A qubit (quantum bit) circuit includes a superconducting main loop that is electrically-completed by a serially-interconnected superconducting subloop. The subloop includes two Josephson junctions. A first coil provides a first flux that couples with the main loop but not with the subloop. A second coil provides a second flux that couples with the subloop but not with the main loop.

A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer.