32results about How to "High quality factor" patented technology

The invention provides a method for automatically generating a pixelated resonant cavity of an oscillator based on knowledge-driven reverse design. The method comprises the following steps: determining a topological region range of VCO resonant cavity design; determining a reverse design target; a priori knowledge driving pixel matrix drawing strategy is established, pixelated inductor topological structure drawing is completed in the topological region based on the drawing strategy, and a primary pixelated inductor topological structure quality factor and a secondary pixelated inductor topological structure quality factor are calculated; according to a reverse design target, searching a Q value of a primary pixelated inductance topological structure from a binary n * n matrix assembly at a given target frequency, and meanwhile, achieving a maximized optimal solution to obtain an optimal pixel topological structure; and constructing the voltage-controlled oscillator in combination with the optimal pixel topological structure. According to the method, batch automatic simulation and optimization of the optimal resonant cavity structure can be realized, and compared with manual design, the time cost is saved, and meanwhile, the performance is further improved.

A filter circuit and an adjustable inductor thereof, which relates to a filter circuit, includes a power supply end, an output end, a power supply line and an adjustable inductor. The power supply end is used to receive an operating power supply. The output end is used to output the operating power supply. The power supply line is coupled between the power supply end and the output end. The adjustable inductor is electrically connected between the power supply end and a ground end and used to eliminate noise on the power supply line. The adjustable inductor includes a first transducer and a second transducer. The first transducer and the second transducer have opposite transconductance phases, and the second transducer is electrically connected between two ends of the first transducer.

The utility model provides a kind of refractive index sensing device based on titanium dioxide nanopore array, it is related to micro-nano photoelectronic technical field, the device includes titanium dioxide substrate, the titanium dioxide substrate surface is equipped with the nanopore array of square periodic arrangement;Gold film layer, the gold film layer covers in nanopore side wall and hole bottom surface;Silver film layer, the silver film layer covers in the upper surface of the titanium dioxide substrate, and the silver film layer with the gold film layer is connected at the orifice edge of nanopore;Silica protective layer, the silica protective layer covers in the exposed surface of the gold film layer, silver film layer, forms the package protection of metal layer.The utility model improves sensitivity and quality factor, and with low-cost material and local coating reduces cost and simplifies structure, also rely on protective layer to enhance stability, realize high performance and economy compatibility.

This invention relates to the field of fused silica wire drawing apparatus, and more specifically, to a multi-parameter joint feedback control method and system for drawing silica wire. This invention can jointly control the drawing speed, feeding speed and laser power of silica wire based on the diameter of the silica wire and the temperature of the heating zone, thereby achieving uniform stress distribution and diameter of the silica wire, effectively ensuring the repeatability of various parameters of the drawn silica wire, and further improving the fracture strength, quality factor and torsion balance system sensitivity of the silica wire.

The application provides a vertical resonant MEMS electric field sensor based on GIS-SOI-GOS, which is composed of GIS layer, SOI layer and GOS layer. The GIS layer comprises an upper driving electrode, an insulating ring, conductive silicon, a plurality of through holes and a groove on a glass layer, and the upper driving electrode is insulated from the conductive silicon through the insulating ring. The SOI layer is composed of a device layer, a buried oxygen layer and a substrate layer, the device layer is provided with a lower driving electrode, a shielding electrode, an induction electrode, an elastic beam and an anchor point, and the buried oxygen layer and the substrate layer are etched to have a hollow window, which together with the groove on the glass layer below the GIS provides a vertical vibration space for a movable structure. The GOS layer comprises an electric field induction cover plate and a glass layer provided with a window, and is used to establish an electric field induction channel. The application realizes integrated wafer-level preparation of a sensitive structure and vacuum packaging of the vertical resonant MEMS electric field sensor, and has the characteristics of high electric field induction efficiency, high quality factor, low driving voltage and the like.

This invention belongs to the field of electronic information materials technology, and discloses a (In 1 / 3 Mo 2 / 3 ) 5+ Cobalt niobate-doped microwave / terahertz dielectric ceramics and their preparation methods, with the general chemical formula CoNb 2‑x (In 1 / 3Mo 2 / 3 ) x O6, 0.01 ≤ x ≤ 0.03; This material has a single orthorhombic niobite structure with space group Pbcn. Its preparation method involves weighing and mixing CoO, Nb2O5, In2O3, and MoO3 raw materials through ball milling; drying the ball-milled slurry, adding a binder for granulation, sieving, and pressing into green bodies; sintering the green bodies after debinding to obtain the indium-molybdenum composite ion-doped cobalt niobate dielectric ceramic. It exhibits low dielectric loss and moderate dielectric constant in the terahertz band, filling the gap in existing research on the dielectric properties of cobalt niobate dielectric ceramics in the terahertz band. Furthermore, the material's preparation process is simple, the sintering temperature is moderate, it is compatible with existing ceramic processes, suitable for industrial production, and has broad application prospects in next-generation microwave / terahertz communication devices.

The application provides a dielectric resonator, comprising: a dielectric resonant cavity, the dielectric resonant cavity comprising a solid dielectric body and a metal plating layer wrapping an outer surface of the dielectric body; a capacitively loaded structure embedded in the dielectric body, and an end surface of the capacitively loaded structure being in contact with the metal plating layer of a surface of the dielectric resonant cavity, the capacitively loaded structure having a cross section with an area greater than that of the end surface; and a quality factor of the dielectric resonator being related to a volume-surface ratio of the capacitively loaded structure.

The application discloses a preparation method of a fluoride microwave dielectric ceramic material. NaF powder, NaCl powder and deionized water are heated and stirred, the stirred and dried powder is mixed with MgF2 powder through wet ball milling, drying and molding to obtain a ceramic body, and finally sintering at 600-750 DEG C obtains the fluoride microwave dielectric ceramic material. The application further discloses the fluoride microwave dielectric ceramic material prepared by the preparation method of the fluoride microwave dielectric ceramic material, and the main phase of the fluoride microwave dielectric ceramic material is NaF. The fluoride microwave dielectric ceramic material prepared by the application has the advantages of simple process, low preparation energy consumption, excellent material performance and suitability for being used as a key basic material of a microwave device for LTCC.

The invention provides a piezoelectric micromechanical ultrasonic transducer, a control method and an array. The piezoelectric micromechanical ultrasonic transducer (100) comprises: a substrate (101) provided with a back cavity (102); the composite diaphragm structure is arranged above the back cavity and comprises a piezoelectric film layer (105) used for transmitting and receiving ultrasonic waves based on the piezoelectric effect; the phase change tuning layer (110) is mechanically coupled with the piezoelectric thin film layer and is prepared from a nonvolatile material with reversible mechanical properties, the nonvolatile material has at least two stable phase forms under external excitation, and different phase forms correspond to different mechanical properties; the change of the mechanical property causes the change of the overall effective rigidity of the composite diaphragm structure; and the excitation structure (108) is coupled with the phase change tuning layer and is used for applying external excitation to the phase change tuning layer so as to drive the nonvolatile material to carry out nonvolatile switching among different phase forms, so that frequency tuning of the piezoelectric micromechanical ultrasonic transducer is realized.

The application provides a quantum storage device, a preparation method and a quantum device, and relates to the technical field of quantum storage devices. The quantum storage device comprises a substrate, a superconducting circuit, at least two support parts, at least two diffusion regions and a superconducting mechanical oscillator. The at least two support parts are arranged vertically on a first surface. The at least two diffusion regions are arranged one by one with the support parts. The at least two diffusion regions are connected with the superconducting mechanical oscillator, so that the superconducting mechanical oscillator is arranged in suspension on the first surface. The superconducting mechanical oscillator comprises a suspension part and at least two cantilever beams, and the cantilever beams are arranged one by one with the diffusion regions. The direction of each cantilever beam is different, so that the at least two cantilever beams jointly form a first branch structure, and the first branch structure is used for reducing the dissipation of vibration energy of the suspension part for the first time based on a dissipative dilution mechanism. The application can guarantee the mechanical stability of the superconducting mechanical oscillator and the preparation yield, and can reduce mechanical loss and improve the quality factor.

The application provides a suspended optical mechanical system, comprising a first substrate block, a suspended waveguide, a suspended support beam, a plurality of support tether groups, a suspended detection mass and an optical cavity, wherein the suspended waveguide comprises a linear main body part extending along an X direction and a plurality of connection parts arranged in sequence and at intervals along the X direction, and the support tether groups are connected to the section of the suspended waveguide with the connection parts, the stability of the connection of the support tether and the suspended waveguide is increased, the width of the suspended waveguide at the connection parts is enlarged, the optical mode can be well limited in the waveguide, and the influence of the support tether on the optical mode is minimized. The tapered part of the connection part ensures the singularity of the mode in the process of light field transmission and slows down the change trend of the width of the suspended waveguide, which is beneficial to reduce the scattering loss and further increase the quality factor. The connection part arranged on one side can ensure that the gap width between the suspended waveguide and the optical cavity is constant, thereby ensuring the optimal coupling efficiency.

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.

The application discloses an inner rod direct connection structure high-frequency cavity for a desktop cyclotron, which comprises a resonant cavity outer shell body, and two upper inner rods and two lower inner rods which are symmetrically arranged at 180 degrees and are located above and below the accelerator center plane and are arranged in the resonant cavity outer shell body; one end of each of the two upper inner rods and the two lower inner rods is respectively provided with a pair of upper triangular Dee plates which are respectively arranged towards the accelerator center plane; the two upper inner rods 1 and an upper inner rod connecting piece 2, the two lower inner rods 1 and a lower inner rod connecting piece 2 and two large cylinders are all extended out of the upper cover plate and the lower cover plate of the accelerator, the height of the extension of the two large cylinders on one side of the accelerator center plane is close to one time of the total height from the accelerator center plane to the upper cover plate or the lower cover plate; the application can meet the premise of using one power source, does not need to occupy the narrow space in the center area, the outer conductors of the inner rod parts of the two cavities are connected, the cavity structure can be larger, the resonant frequency is reduced and the quality factor of the cavity is improved.

The application discloses a high-quality-factor hybrid metal-dielectric plasmonic resonant optical filter; the filter comprises a substrate layer, a high-refractive-index dielectric layer, a low-refractive-index dielectric layer and a metal grating layer which are sequentially stacked upwards; the substrate layer is made of a low-refractive-index transparent dielectric material; the material of the high-refractive-index dielectric layer has a refractive index greater than the refractive index of the material of the low-refractive-index dielectric layer and the substrate material; the metal grating layer is provided with a grating structure with periodic arrangement and comprises three metal strips in one device period; the width of the middle metal strip is greater than the width of the two metal strips on the sides; the radiation loss of the coupling mode is adjusted by adjusting the width of the middle metal strip, and then the quality factor of the filter is adjusted. The application has the advantages of simple structure, high quality factor, compatibility with traditional integrated circuit preparation processes and the like, and has wide application in the fields of optical communication, hyperspectral and multispectral imaging and sensing and the like.

The invention relates to the technical field of iron-silicon magnetic powder inductance processing, in particular to an iron-silicon magnetic powder inductance material and a preparation method thereof.The iron-silicon magnetic powder inductance material is prepared from, by weight, iron-silicon alloy, a composite insulation coating agent, a surfactant, ferric nitrate, citric acid and an adhesive solution; the preparation method comprises the following steps: ultrasonically dispersing phosphate and n-type semiconductor oxide nano powder in ethanol, adding a silane coupling agent, adjusting the pH value to 4.0-5.5, reacting at 60-80 DEG C for 2-4 hours, filtering and drying to obtain the composite insulating coating agent, the iron-silicon magnetic powder inductance material prepared through the method solves the key technical problems that iron-silicon magnetic powder is large in loss, low in magnetic conductivity and poor in design flexibility, the high-frequency performance and reliability are improved, and the urgent requirements for high frequency, miniaturization and high efficiency of power inductors in the fields of consumer electronics, new energy automobiles, 5G communication and the like are met.

The application discloses a multilayer graphene broadband absorber with a heterostructure coupling cavity, which comprises a substrate layer and a plurality of graphene layers arranged on the substrate layer, and a photonic crystal array layer and a flat plate layer are arranged on both sides of each graphene layer; a plurality of heterostructure coupling cavities are formed on the substrate layer through the photonic crystal array layer, the graphene layer and the flat plate layer. The application forms a plurality of coupling cavities based on the photonic crystal array-graphene-flat plate heterostructure through the layering, when electromagnetic waves are incident on the graphene absorber, the graphene is excited to generate surface plasmons, and under the action of the photonic local effect, the energy of the electromagnetic waves is coupled into the surface plasmons, the resonance cavity effect generated by the coupling cavities can increase the coupling effect, thereby improving the absorption efficiency of the graphene absorber; and the coupling cavities can effectively increase the absorption bandwidth, thereby improving the practical application range of the graphene absorber.

The invention discloses a miniature resonant biological tissue mechanical sensor and a preparation method thereof, and belongs to the technical field of biomedical engineering. The invention aims to solve the problem that a tuning fork type resonator cannot be directly used for axial detection of a probe due to the fact that the vibration direction is inconsistent with a long axis. The sensor comprises a tubular shell, a resonance sensing element, a vibration direction conversion mechanism, a probe and an end structure, the vibration direction of the resonance sensing element is perpendicular to the long axis direction of the resonance sensing element; a resonance sensing element is arranged in the tubular shell, the tail end of a vibration part of the resonance sensing element converts the vibration direction into the long axis direction of the resonance sensing element through a vibration direction conversion mechanism, and the long axis direction is the axial direction of the tubular shell; the vibration direction conversion mechanism is connected with the head end of the probe; the tail end of the probe extends out through the tail end of the end structure; the head end of the end structure is connected with the tail end of the tubular shell, a micro gap is formed between the tail end of the end structure and the probe, and the micro gap is used for forming a liquid sealing structure under the action of surface tension of external liquid. The method is used for detecting the mechanical properties of biological tissues.

Architectures and methods of constructing high precision, high stability MEMS based angular rate sensors are provided. The structures include implementations that allow for the suppression of in-phase motion of the coupled masses, mechanical enhancement of the drive motion in the drive mass, and mechanical enhancement of the Coriolis induced motion in the sense mass. The proposed architectures minimize the mechanical momentum generated by the actuation forces in the drive, sense, and Q-compensation masses compared to the prior art. Furthermore, the methods include several implementations for achieving stress decoupling between the MEMS device and the environment and reducing anchor point damping.

The invention discloses a cavity surface treatment method for improving the quality factor of a quasi-optical cavity, and relates to the technical field of electromagnetism. According to the method, after aluminum is adopted to machine the quasi-optical cavity reflector, the surface of the reflector is plated with silver, a paint spraying material without metal components and wave-absorbing components is sprayed for paint spraying protection, and a protection layer with the thickness not exceeding one percent of the working wavelength of a quasi-optical cavity body is formed on the surface of the reflector. According to the method, the problem that the surface of the quasi-optical cavity is easily oxidized due to silver plating is solved, the quality factor of the quasi-optical cavity is improved, cavity protection measures are added, accurate measurement of the material loss angle tangent value is achieved, and the application range is wide.

This invention discloses an on-chip compact dual-core dual-path quality factor enhancement source degradation fully differential low-noise amplifier, comprising four MOS transistors, gate-source capacitors, DC blocking capacitors, bias resistors, and inductors. Four source half-turn inductors form a first transformer, and two gate-end inductors coupled together form a second transformer, which is nested within the first transformer. The first and second transformers constitute a multiplexed four-turn coupled transformer, simultaneously achieving source degradation imaginary and real part matching within the same transformer area. In differential operation, the currents in both signal paths enhance the magnetic flux, improving the effective inductance and quality factor of the inductors. This achieves on-chip integration of gate-end inductors in the Sub-6GHz band, optimizing noise, gain, and area efficiency.

This application discloses a composite soft magnetic material, comprising a soft magnetic material and a metal, wherein the metal includes copper and silver, and the metal is coated on the surface of the soft magnetic material; the soft magnetic material includes soft magnetic metals and soft magnetic alloys. This application further discloses a method for preparing the above-mentioned composite soft magnetic magnetic or filamentous material. Furthermore, an inductor coil is prepared using the above-mentioned composite soft magnetic magnetic or filamentous material. The inductor coil exhibits a very excellent quality factor under high-frequency operating conditions and a very low inductance under low-frequency operating conditions. Therefore, the inductor coil prepared using the composite soft magnetic magnetic or filamentous material described in this application has very low energy loss, making it particularly suitable for large-scale applications.

This invention relates to a low-frequency receiving antenna based on a gradient metamaterial with critical coupling, belonging to the field of low-frequency magnetic induction communication technology. The low-frequency receiving antenna includes: a receiving coil connected in series with a capacitor and connected to a receiver load via the capacitor; and a gradient metamaterial composed of multiple concentric resonant units with size gradients, each resonant unit consisting of a coil and a capacitor connected in series to form an independent resonant circuit. The receiving coil and the gradient metamaterial are concentrically nested, with the receiving coil located on the innermost side. This invention's low-frequency receiving antenna achieves matching between the antenna output impedance and the receiver load by precisely controlling the coupling strength between the gradient metamaterial and the receiving coil, as well as the capacitor configuration parameters. Simultaneously, the wide spacing between adjacent coils significantly reduces proximity losses. With the optimal combination of impedance matching and loss performance, the antenna reaches a critical coupling state. Combined with the increasing equivalent permeability distribution from the outside to the inside formed by the gradient metamaterial, it effectively converges low-frequency magnetic fields, improving the pickup capability of weak low-frequency electromagnetic signals. This invention maintains a compact size for the low-frequency antenna while possessing high receiving sensitivity, making it suitable for low-frequency magnetic field communication and detection in complex environments such as underwater and underground.

The application belongs to the field of integrated circuit technology design, and relates to a passive and crystal-free GFSK transmitter chip, which comprises a radio frequency energy collection module, a power management module, a clock recovery module and an open-loop modulation transmitter module, the radio frequency energy collection module is used for wireless power supply, the power management module controls a power switch of the transmitter chip according to a power supply voltage value, when the power switch is opened, the power management module supplies power to the open-loop modulation transmitter module, the clock recovery module provides a reference frequency for the open-loop modulation transmitter module, and the open-loop modulation transmitter module multiplies the reference frequency to a radio frequency frequency required for transmission and transmits a data signal. The transmitter chip has the advantages of low power consumption and small size, is suitable for wireless sensor network nodes, and has strong commercial value.

The invention provides an ultra-small electromechanical coupling coefficient resonator, an implementation method and an ultra-narrow band filter, and the method comprises the steps: applying a preset pulse voltage to an electrode of a bulk acoustic wave resonator of which a piezoelectric layer comprises a ferroelectric layer, so as to achieve the overturning of a local polarization direction of a preset region of the ferroelectric layer of the bulk acoustic wave resonator, therefore, the bulk acoustic wave resonator with the ultra-small overall electromechanical coupling coefficient is obtained. The first pulse voltage is applied to the resonator based on the ferroelectric material, the polarization direction of the ferroelectric layer is locally turned, the bulk acoustic wave resonator with the ultra-small electromechanical coupling coefficient is obtained, and the application requirement of an ultra-high-frequency ultra-narrow-band filter is met; besides, a second piezoelectric layer can be arranged between the first electrode and the second electrode, so that the piezoelectric coefficient of the ferroelectric layer can be partially offset, the electromechanical coupling coefficient of the resonator is greatly reduced, and the filter with the ultra-narrow bandwidth is realized. And finally, the filter with narrower bandwidth is realized by selecting the material and the thickness of the electrode.

A reduction-resistant microwave temperature-stabilized ceramic capacitor, its ceramic dielectric material, and its preparation method are disclosed. The ceramic dielectric material is composed of 100 moles of Ba. x Sr 1‑x Mo 1‑y W y Using O4 as a base material, the following components are added in molar amounts: 4-8 parts of CaRe4(MoO4)6, 2-5 parts of BiYMoO6, 0.5-1.0 parts of MgAl₂O₄, 0.2-0.8 parts of ZrSiO₄, and 1-3 parts of Na₂B₂O₇, wherein 0 < x < 0.15, 0 < y < 0.10, and Re = La, Nd, Ce; This invention uses Ba x Sr 1‑x Mo 1‑y W y Using O4 as the base material, CaRe4(MoO4)6 and BiYMoO6 synthesized by solid-state method were added to improve its dielectric constant and adjust the temperature coefficient of capacitance. Spinel MgAl2O4 and zircon ZrSiO4 were used to improve the dielectric material's resistance to reduction under N2 / H2 atmosphere, and borax Na2B2O7 was added to lower its densification temperature. The resulting ceramic dielectric has a dielectric constant of [missing information]. e r With a temperature >80 and a densification temperature between 1150 and 1250°C, it is suitable for use as a reduction-resistant microwave temperature-stabilized ceramic capacitor with nickel as the internal electrode.

This invention discloses a small, equal-band dual-frequency transceiver based on wireless communication technology. It includes a ceramic dielectric body, a tuning element, a multilayer circuit body, and an external electrode assembly. The tuning element is disposed on top of the ceramic dielectric body. The multilayer circuit body is disposed inside the ceramic dielectric body and electrically connected to the tuning element through a via structure. The multilayer circuit body includes a low-frequency channel filter and a high-frequency channel filter. The external electrode assembly is disposed at the bottom of the ceramic dielectric body. The low-frequency channel filter outputs signals within a set low-frequency band, and the high-frequency channel filter outputs signals within a set high-frequency band. This invention achieves a large capacitance value within a small volume by using vertical coupling. By setting the tuning element, the stopband bandwidth and suppression depth of the dual-frequency transceiver can be flexibly adjusted by changing the value of the tuning element, resulting in miniaturization, wide stopband, high suppression, and tunability.

The application discloses a kind of ultra-high sensitivity MEMS micro-pressure sensor, including pedestal, two resonance beams, two tuning electrodes, two weak coupling beams and four identical pressure films.Tuning electrode is used to adjust the stiffness of resonance beam, to realize the equal inherent frequency of two resonance beams;Two weak coupling beams adopt symmetrical "S" type distribution, improve the micro-pressure measurement sensitivity and quality factor of sensor.By MEMS micro-pressure sensor, using the detection method of segmented amplitude ratio difference can realize the ultra-high sensitivity detection of measured pressure.The ultra-high sensitivity MEMS micro-pressure sensor of the application can be used for micro-pressure measurement in the field of aerospace, has ultra-high sensitivity, and wide detection range, high quality factor, good stability.

This invention provides a thin-film piezoelectric acoustic wave resonator, its manufacturing method, and a filter. The thin-film piezoelectric acoustic wave resonator includes: a first substrate; an upper electrode, a piezoelectric sheet, and a lower electrode stacked sequentially from top to bottom on the upper surface of the first substrate; the upper electrode, the piezoelectric sheet, and the lower electrode have overlapping regions in a direction perpendicular to the surface of the piezoelectric sheet; in the overlapping regions, a first gap is provided between the piezoelectric sheet and the upper electrode, and a second gap is provided between the piezoelectric sheet and the lower electrode; an isolation cavity surrounds the outer periphery of the piezoelectric sheet, and at least one connecting bridge is provided between the piezoelectric sheet and the substrate; the first gap and the second gap are connected through the isolation cavity.

The application belongs to the field of glass ceramics, and particularly relates to barium boron ultralow-temperature sintering glass ceramics, a preparation method and application thereof. 13 The main crystal phase of the barium boron ultralow-temperature sintering glass ceramics is at least one of BaB8O 13 crystal and BaB2O4 crystal, the glass ceramics is composed of BaO, B2O3 and three oxides after doping K2O, the preparation process is simple, and sintering densification can be completed in an ultralow temperature range of 610-650 DEG C. When tested under a microwave frequency (13-16 GHz), the dielectric constant of the glass ceramics is epsilon r = 5.31-7.05, the quality factor Qxf can reach 38,768 GHz, and the resonance frequency temperature coefficient tau f =-7.44--86.24 ppm / DEG C. The glass ceramics has good chemical compatibility with electrode materials such as aluminum and silver, the co-sintering interface is clear, and there is no element interdiffusion phenomenon, and can be used as a candidate scheme of ULTCC substrate material.