35088results about How to "Reduce thickness" patented technology

A biocompatible fastener particularly well-suited for use in fundoplication procedures. In a preferred embodiment, the fastener is designed to break within the span of approximately three to six months after implantation and comprises a male portion and a female portion. The male portion includes a first base member, the first base member being generally flat and oval. A pair of male members are mounted on the bottom surface of the first base member, each male member comprising a cylindrical post extending downwardly from the bottom surface of the first base member and a conical head disposed at the bottom end of the post. The female portion includes a second base member, the second base member being generally flat and oval. A pair of sleeves are mounted on the top surface of the second base member and extend upwardly therefrom. Each sleeve defines a bore adapted to receive a head from a corresponding male member and has an inner flange formed thereon. The flange extends radially into the bore and is engageable with the head once the head has been inserted therepast so as to inhibit withdrawal of the head from the bore. Except for an outer coating on each of the two heads, the fastener is made entirely of a non-bioabsorbable material or a bioabsorbable material having a relatively slow degradation rate. By contrast, the outer coating is made of a bioabsorbable material having a relatively fast degradation rate. The thickness of the outer coating is appropriately selected so that degradation of the outer coating permits each head to be withdrawn past its flange after a desired period of time.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A process for fabrication of a semiconductor device including a modified ONO structure, including forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT(TM) two-bit EEPROM device or a floating gate flash device including a modified ONO structure.

A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

Acrylic-based pressure sensitive adhesives are modified with a telechelic hydrocarbon oligomer. The oligomer comprises a hydrocarbon polymer chain or backbone and a functional end group, e.g., an oligomer prepared from a mono hydroxyl polybutadiene polymer and toluene diisocyanate. The oligomer attaches to the acrylic backbone of the polymer as a pendant group and in a preferred embodiment, the oligomer is mixed with the PSA shortly before the PSA is coated.

Ultrasound device having a reaction chamber, which includes a magnetostrictive transducer and a horn transmitting ultrasound radiation substantially uniformly throughout the reaction chamber. The horn is hollow and is constituted by a cylinder having an empty inner chamber at its core defining a resonance chamber, which may be cylindrical and may comprise a plurality of sections of cylindrical shape or a central section of larger diameter and two terminal sections of smaller diameter.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

A piezoelectric device for an ink jet print head that has a greater displacement at a low drive voltage. The ink-jet recording head includes a vibration plate, on which is mounted one or more piezoelectric devices that change the volumes of pressure chambers upon application of a voltage. The device is mounted at least on one face of a pressure chamber substrate that is to be filled with ink. Such piezoelectric device includes a second piezoelectric layer having a piezoelectric constant g of a constant value or higher; and a first piezoelectric layer having a dielectric constant of a specific value or higher. Since the piezoelectric constant d of the piezoelectric device correlates with the product of the largest piezoelectric constant g and the largest dielectric device of the piezoelectric devices, a piezoelectric constant d larger than in the conventional case, i.e., having a greater displacement, can be obtained.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping, “wrapped” gates, epitaxially grown conductive regions, epitaxially grown high mobility semiconductor materials (e.g. silicon-germanium, germanium, gallium arsenide, etc.), high-permittivity ridge isolation material, and narrowed base regions can be used in conjunction with the segmented channel regions to further enhance device performance.

A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.

A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

A display device with a touch sensor according to the present invention includes an active matrix substrate 4A and a transparent counter electrode 7. On a first surface of the active matrix substrate, multiple pixel electrodes are arranged in matrix. The transparent counter electrode is opposed to the first surface of the active matrix substrate. The display device further includes a first circuit, a second circuit and a switching circuit. The first circuit supplies a voltage or a current to the transparent counter electrode for display purposes. The second circuit detects currents flowing from a number of points on the transparent counter electrode. And the switching circuit selectively connects electrically one of the first and second circuits to the transparent counter electrode.

In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

A floating gate flash memory device including a substrate comprising a source region, a drain region, and a channel region positioned therebetween; a floating gate electrode positioned above the channel region and separated from the channel region by a tunnel dielectric material layer; and a control gate electrode positioned above the floating gate electrode and separated from the floating gate electrode by an interpoly dielectric layer, the interpoly dielectric layer comprising a modified ONO structure having a bottom dielectric material layer adjacent to the floating gate electrode, a top dielectric material layer adjacent to the control gate electrode, and a center layer comprising a nitride and positioned between the bottom dielectric material layer and the top dielectric material layer, in which the tunnel dielectric material layer, and at least one of the bottom dielectric material layer and the top dielectric material layer, comprise a high-K dielectric material.

A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first dielectric material layer on the semiconductor substrate; depositing a silicon nitride layer on the first dielectric material layer; and forming a top dielectric material layer, wherein at least one of the bottom dielectric material layer and the top dielectric material layer comprise a mid-K or a high-K dielectric material. The semiconductor device may be, e.g., a SONOS two-bit EEPROM device or a floating gate flash device including the modified ONO structure.

Light emitted in side surface directions from side-emitting red, green, and blue LEDs which are arranged on an LED array substrate is introduced into a light guide from side surfaces of a groove-shaped recessed portion, and propagates in the light guide. Thus, the three colors are mixed. The light further propagates in the light guide while being reflected at both side end surfaces of the light guide by the function of a reflective sheet and the like. Thus, color mixing progresses. Further, the light is reflected upward by diffuse reflective means provided on the lower surface of the light guide, and emitted as backlight light to the outside through a diffuse sheet.

A golf club head is provided having an increased sweet spot across its club face. A preferred construction includes a face plate having vertical zone of increased thickness and a central region having a reduced thickness. An upward extension of the vertical zone comprises divergent segments separated by an upper region of reduced thickness. The face plate material is preferably metallic, but in alternative embodiments may be formed of a composite or non-metal material. Methods for manufacturing a golf club head having a face plate with the thicknesses of the present invention include forging and machining techniques. The club head may be a wood-type or iron.

An implantable medical device includes a porous metal foam or foam-like structure having pores defined by metal struts or webs wherein the porous structure has directionally controlled pore characteristics. The pore characteristics controlled include one or more of the metal structure porosity, pore size, pore shape, pore size distribution and strut thickness. The pore characteristics may vary in one or more directions throughout the structure. Preferably the pore characteristics are controlled to match the porous metal structure to various mechanical and biological requirements of different regions of the structure in order to optimize aspects of the implants performance and may vary not only over the surface of the porous structure but through the depth of the porous structure. The thickness of the porous metal structure may also be modified to establish a thickness profile that optimizes mechanical and biological requirements of the implants performance. Acetabular cup embodiments of the invention are described. Various methods of manufacturing implants having directionally controlled pore characteristics are described.

A touch sensor integrated display device is provided comprising gate lines and data lines formed on a substrate to be intersected with each other, a plurality of pixel electrodes formed at intersections between the gate lines and the data lines, and a common electrode formed to overlap the plurality of pixel electrodes through an insulating film disposed between the common electrode and the plurality of pixel electrodes, wherein the common electrode includes at least two touch electrodes, each of which is connected to at least one of signal lines arranged in one of a first direction and a second direction crossing the first direction.