731 results about "Monolayer" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

The invention relates to a high-throughput screening method and system for a self-assembled single-layer thermal interface material and a medium. The high-throughput screening method comprises the following steps: constructing an interface heat transport simulation system based on a self-assembled monomolecular layer; screening set preparation is carried out on the end group structure, and an end group screening set and a pre-calculation set are constructed; carrying out molecular dynamics simulation on the self-assembled monomolecular layer corresponding to the pre-calculation set to obtain a physical association index; training a machine learning model by taking the physical association index as a machine learning objective function; carrying out machine learning prediction on the uncalculated screening candidate data set based on the trained machine learning model, and carrying out parallel screening of physical association indexes to obtain a simulation verification set; and carrying out molecular dynamics simulation for verification. Compared with the prior art, high-throughput screening of the self-assembled single-layer thermal interface material is achieved, and the method has important significance on solid-liquid interface heat conduction characteristic regulation and control design under data driving.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The present invention relates to a method of forming a layer of a compound having a thickness selected in the range of a monolayer to several mm on a substrate, such as a single crystal wafer, the substrate being arranged in a process chamber comprising one or more sources of source material. The invention further relates to a compound optionally obtained by this method.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate; forming a copper column structure on the substrate, wherein the copper column structure comprises a plurality of layers of copper column sections which are sequentially stacked and connected; the forming method of the copper column structure comprises the steps that a plurality of photoetching electroplating processes are carried out on a substrate, a layer of copper column section is formed in each photoetching electroplating process, and then the thickness of a photoetching layer formed in each photoetching electroplating process can be reduced, so that the technological difficulty of forming the photoetching layer and photoetching development is reduced. And the electroplating time of each layer of copper cylinder section is effectively shortened compared with the time of electroplating the whole copper cylinder at one time, so that the phenomena of swelling, cracking and the like of the photoetching layer in the electroplating operation for a long time can be avoided. The depth-to-width ratio of the single-layer copper column section is small, the exchange efficiency of copper plating liquid medicine can be guaranteed, and then the copper nodule phenomenon is reduced. And the copper column structure is divided into multiple layers of copper column sections, so that the height limitation of electroplating the whole copper column at a time can be broken through, and the copper column structure has higher designability.

The invention relates to the technical field of particle therapy, and provides a vacuum membrane window structure and a processing method.The structure comprises a membrane window flange, a supporting lining net, a non-metal polymer film, a membrane window pressing plate, a first sealing piece and a second sealing piece; the membrane window flange is provided with an annular positioning part; the supporting lining net is arranged on the annular positioning part; the non-metal polymer film is arranged on the side, away from the annular positioning part, of the supporting lining net and plated with a metal layer. The film window pressing plate is arranged on the side, away from the supporting lining net, of the non-metal polymer film. The first sealing piece is arranged between the periphery of the supporting lining net and the non-metal polymer film, and the second sealing piece is arranged between the periphery of the annular positioning part and the periphery of the non-metal polymer film; the non-metal polymer film, the film plating layer and the supporting lining net are tightly attached together, so that the film thickness is greatly reduced, the vacuum performance of a single-layer film is better than that of an existing double-layer structure, energy loss, scattering and neutron yield during beam film penetrating are reduced, and beam quality and treatment precision are improved.

The invention relates to the technical field of composite film strength detection, and discloses a composite film peel strength testing device which comprises a testing platform, two pulling sliding plates slidably mounted in the two extending parts respectively and capable of being synchronously and mutually close to or away from each other for adjustment, and the two pulling sliding plates are arranged on the testing platform. The opposite ends of the two pulling sliding plates are each provided with a clamp used for clamping a single-layer film of a composite film separation section. The clamping assembly is arranged in the test platform and is used for clamping and limiting the fitting section of the composite membrane and enabling the separation section and the fitting section of the composite membrane to form a Y-shaped state; and two groups of test assemblies. Through the Y-shaped constant-angle stripping design, the stripping surface of the composite film is uniquely locked, the stripping angle is kept unchanged in the whole testing process, and the effects that stripping cracks are stably limited to a specified unique interface, crack initiation is controllable and deviation is avoided are achieved.

The invention discloses a method for predicting hydrogen diffusion of a multi-coating material on the surface of a material in a vacuum environment, and belongs to the technical field of hydrogen diffusion of materials. On the basis of a hydrogen atom diffusion mass transfer theory in a single-layer matrix material, a hydrogen atom diffusion mass transfer model of the double-coating material is constructed. The hydrogen atom diffusion differential equation, the capture / removal differential equation and the boundary desorption / adsorption differential equation of the single-layer matrix material are established in combination with respective material parameters corresponding to different materials of each layer, boundary condition parameters are introduced into an interlayer interface, the flux continuity and concentration transition relation between the matrix and the plating layer is processed, and the plating layer is obtained. And further obtaining the hydrogen concentration distribution and the dynamic hydrogen release rate in the multi-coating material. The prediction method disclosed by the invention is suitable for any coating combination, can quickly migrate only by replacing material data, and is suitable for multiple fields such as electronic packaging, vacuum devices, hydrogen fuel cells and the like.

The invention belongs to the technical field of biochemical sensing, and particularly relates to an optical-mechanical gas sensor based on a graphene annular microcavity. According to the sensor, a high-sensitivity and low-noise gas detection platform is constructed by combining a high-quality-factor annular microcavity with single-layer graphene; the sensor excites the boundary of the cavity to generate optical mechanical vibration by utilizing radiation pressure generated by propagation of photons in the microcavity; a phonon laser signal with stable frequency and extremely low noise is formed under the continuous action of the pump light; after target gas molecules are adsorbed by graphene, effective mass change of the microcavity is caused, measurable deviation of phonon laser frequency is caused, and therefore real-time high-sensitivity detection of gas concentration is achieved. The optical-mechanical interaction mechanism, the two-dimensional material gas adsorption characteristic and the microcavity optical regulation and control technology are fused, and the device has the advantages of being high in response speed, low in detection limit, easy to integrate and the like and is suitable for multiple scenes such as environment monitoring, biochemical analysis and industrial safety.

Provided in the present application are a two-dimensional 1T-phase molybdenum disulfide nano material, a preparation method therefor, and the use thereof. The two-dimensional 1T-phase molybdenum disulfide nano material satisfies the following conditions: the monolayer ratio of the molybdenum disulfide is 97% or above, the content of the 1T-phase molybdenum disulfide represented by X-ray photoelectron spectroscopy is 90% or above, and the surface has defects. The monolayer ratio of the two-dimensional molybdenum disulfide nano material being 97% or above indicates that the proportion of monolayer molybdenum disulfide nanosheets in the nano material is very high; the mass content of the 1T-phase molybdenum disulfide being 90% or above indicates that the nano material has good metallicity; and meanwhile, the presence of defects on the surface of the nano material indicates that the nano material has good dispersibility in solvents and also has good electrocatalytic performance, especially having excellent electrocatalytic hydrogen evolution performance under an industrial current density; the catalytic performance of the nano material is better than that of commercial Pt / C and even can be kept stable for 100 h without deterioration; thus, the nano material is one of the most superior non-precious-metal hydrogen evolution catalysts at present.

The invention provides a single-layer core-shell structure polishing abrasive for silicon carbide wafer polishing, a polishing solution, a preparation method and a polishing method, and relates to the technical field of chemical mechanical polishing, the single-layer core-shell structure polishing abrasive takes silicon dioxide with the particle size of 300-800 nm as an inner core and aluminum oxide with the particle size of 10-150 nm as an outer shell, the particle size ratio of the inner core to the outer shell is 2: 1-10: 1, and the polishing solution is prepared from silicon dioxide with the particle size of 300-800 nm and aluminum oxide with the particle size of 10-150 nm. And single-layer coating is realized through cationic polyelectrolyte assisted electrostatic adsorption. The polishing solution comprises the following components in parts by weight: 3-15 parts of a polishing abrasive with a single-layer core-shell structure, 0.2-8 parts of an oxidizing agent, 0.1-8 parts of a dispersing agent and the balance of deionized water, and the pH value is adjusted to 8-11. The hardness of the inner core abrasive material of the prepared polishing abrasive material with the core-shell structure is smaller than that of the outer shell abrasive material, the polishing abrasive material with the core-shell structure has high dispersity and low agglomeration rate, in the final polishing process of SiC wafers, the surface roughness Ra smaller than or equal to 0.15 nm can be obtained, meanwhile, the material removal rate is kept to be larger than or equal to 1500 nm / h, the scratch density is remarkably reduced, and the polishing abrasive material is suitable for batch finish machining of high-end power device substrates.

A GHeT includes a bottom gate formed on a substrate; a first dielectric layer (DL) formed on the bottom gate; a monolayer film formed of an atomically thin material on the first DL; a bottom contact (BC) formed on part of the monolayer film; a second DL formed on the BC; a top contact (TC) formed on the second DL on top of the BC; a network of CNTs formed on the TC and the monolayer film, to define an overlap region with the monolayer film; a third DL formed on the CNT network, the monolayer film and the TC; and a top gate formed on the third DL and overlapping with the overlap region. Such GHeT design allows gate tunability of Gaussian peak position, height and width that define Gaussian transfer characteristic, thereby enabling simplified circuit architectures for various spiking neuron functions for emerging neuromorphic applications.

The invention belongs to the technical field of graphene preparation, and particularly discloses a graphene preparation method and device based on coupling of an ultrasonic phased array and a micro-fluidic chip, and the preparation method comprises the following steps: graphite oxide dispersion liquid enters a micro-fluidic main channel through a sample inlet of the micro-fluidic chip; in a standing wave sound field and a laminar flow state of an ultrasonic phased array, stripping the graphite oxide dispersion liquid through a micro-jet shear force generated by a cavitation effect of the standing wave sound field to obtain a graphene oxide sheet layer; graphene oxide lamellas are synchronously separated to a specified separation flow channel through fluid shear force generated by a micro-channel contraction section and an inertia focusing effect caused by curvature of an arc-shaped separation section, and non-single-layer graphene oxide lamellas are separated to a flow channel. The proportion of the single-layer graphene obtained by the preparation method provided by the invention is as high as 95%, and the problem of microchannel blockage can be relieved.

The invention concerns a monolayer comprising a fluoropolymer, a silicon-sulfur compound, and a vinyl polymer consisting in carbon and hydrogen atoms, and optionally oxygen and / or nitrogen atoms, an assembly comprising a substrate and said monolayer, a method for preparing said monolayer, a component comprising said monolayer and a device comprising said component.

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof, the semiconductor structure comprises a first dielectric layer and a first metal layer located in the first dielectric layer, and the first dielectric layer does not cover the top surface of the first metal layer; a self-assembled monolayer covering a portion of the top surface of the first metal layer; the second dielectric layer is located on the first dielectric layer and covers the self-assembly single layer; the third dielectric layer is located on the second dielectric layer and is in bonding connection with the second dielectric layer; the first through hole penetrates through the second dielectric layer and at least part of the third dielectric layer; the barrier layer at least covers the side wall of the first through hole and does not cover the bottom of the first through hole; the second through hole is located below the first through hole and communicated with the first through hole, and the second through hole exposes part of the top surface of the first metal layer and part of the side wall of the self-assembled single layer; and the conductive plug covers the barrier layer in the first through hole and fills the first through hole and the second through hole, and the conductive plug is in direct contact connection with the first metal layer.

The invention relates to a Janus type heterojunction material as well as a calculation method and application of the Janus type heterojunction material in photocatalytic water decomposition, and belongs to the technical field of heterojunction materials. The upper layer of the material is a 1T-phase GeSe single layer, the lower layer of the material is a 1T-phase SnSSe single layer, and the material is divided into two configurations of GeSe / SSnSe and GeSe / SeSnS according to interface atom arrangement. Modeling and simulation calculation are carried out through VESTA and VASP software, and the result shows that the material has the direct Z-type heterojunction characteristic, photon-generated carrier separation can be effectively promoted, the light absorption range is widened, the photocatalytic oxidation reduction capacity and the solar energy-hydrogen energy conversion efficiency are remarkably improved, and a new strategy is provided for developing efficient photocatalysts.

The invention discloses a low-temperature-impact-resistant high-strength bolt for a high-cold railway and a heat treatment method of the low-temperature-impact-resistant high-strength bolt. The bolt is of a special three-layer structure of a base body, a bionic nanometer laminated layer and a high-entropy alloy nitriding layer, wherein the grain size of the base body reaches the ASTM8 level or above; the bionic nano laminated layer is formed by alternately depositing TiN and VC, and the thickness of a single layer is less than 50nm; the high-entropy alloy nitriding layer is made of AlCoCrFeNiTi, the thickness is larger than 50 microns, the heat treatment method comprises the steps of grain refinement pretreatment, lamination preparation through magnetron sputtering, high-entropy alloy laser cladding, electromagnetic field assisted nitriding, oil quenching, cryogenic oscillation, tempering and the like, and intelligent quality control means such as a machine learning model, sound pressure feedback and image recognition are integrated. According to the scheme, the impact energy of the bolt at the temperature of minus 60 DEG C is higher than 55 J, the tensile strength is larger than 1200 MPa, the surface hardness is not lower than 1200 HV, the interface bonding critical load is higher than 80 N, and the problems of low-temperature brittle fracture, obdurability contradiction and quality consistency of the high and cold bolt are solved.

The application relates to a ferroelectric monolayer vanadium trichloride film and a preparation method thereof. The method comprises the following steps: evaporating and depositing VCl3 powder on the surface of a NbSe2 substrate under an ultrahigh vacuum atmosphere, and performing annealing treatment, so that the ferroelectric monolayer vanadium trichloride film is obtained. The sample preparation strategy of molecular beam epitaxy under an ultrahigh vacuum environment is used, high-purity VCl3 powder is evaporated and deposited on a NbSe2 substrate, an atomically flat monolayer VCl3 sample is obtained through annealing treatment, in-situ scanning tunneling microscope technology and scanning tunneling spectrum technology are combined, and it is determined that the monolayer VCl3 is a semiconductor material with ferroelectricity. The method provides a new method and idea for introducing ferroelectricity in the family of transition metal trichlorides, has high application potential and scientific research value, meanwhile, the successful introduction of ferroelectricity in the system also provides a new platform for carrying out multi-state regulation and research.

The application discloses a graphene sliding ferroelectric regulation method and device based on defect engineering and belongs to the technical field of two-dimensional ferroelectric materials. In the application, structural defects are introduced into specified monolayers of double-layer graphene, the lattice spatial symmetry is destroyed, and a defect double-layer graphene system with intrinsic polarity is constructed. Then, the system is polarized and regulated by using out-of-plane interlayer sliding, the out-of-plane ferroelectric polarization is reversibly flipped, and a non-typical sliding ferroelectric response is formed. Meanwhile, a three-layer graphene structure is constructed, defects are introduced into specific layer positions, and a defect three-layer graphene system with high polarization intensity is prepared. The system is subjected to double-mode sliding regulation, small-amplitude polarization is quickly switched by using low-barrier in-plane interlayer sliding, and super-high out-of-plane polarization is obtained by using out-of-plane interlayer sliding, and the polarization is reversibly flipped. The application breaks through the limitation of traditional two-dimensional sliding ferroelectric regulation, provides a new design idea for the research and development of high-performance van der Waals ferroelectric devices, and can be applied to the fields of high-density information storage, intelligent sensing and preparation of new microelectronic devices.

The application discloses a preparation method of a novel composite SERS substrate based on MXene and trace detection application thereof, and particularly relates to the technical field of nanomaterials and spectral detection technology, wherein the substrate takes single-layer MXene nanosheets as a carrier; after synthesis, ZnO crystal seeds are subjected to mediated growth, and the Zeta potential difference between the MXene nanosheets and the ZnO crystal seeds is utilized to make the ZnO crystal seeds loaded on the surface of the MXene nanosheets through electrostatic adsorption to obtain a MXene / ZnO composite material; an Ag@Au core-shell structure is modified on the MXene / ZnO composite material, and finally, a MXene / ZnO@Ag@Au composite material, namely the composite SERS substrate, is obtained.

The present invention relates to a method for manufacturing single crystal graphene having a large area and extremely low surface roughness, and graphene manufactured by the manufacturing method. The method for manufacturing graphene according to the present invention comprises the steps of: (S1) introducing a metal substrate into a sealed chamber, and then heating and pressurizing the inside of the sealed chamber; (S2) supplying a gaseous carbon-containing compound into the chamber to grow graphene on the metal substrate; and (S3) cooling the chamber, wherein a first gas is continuously supplied to the sealed chamber in steps (S1) to (S3).

The invention provides a two-dimensional material solar hydrogen production efficiency prediction method and device based on machine learning. The method comprises the following steps: reading a non-magnetic hexagonal crystal system single-layer material in a database to construct an initial data set; for samples with complete labels in the data set, training a single-layer material band edge position prediction model by adopting a feature engineering and gradient boosting decision tree algorithm; next, predicting and complementing samples with missing labels by using the trained model so as to generate a complete data set and further construct heterojunction double layers; carrying out data enhancement on a heterojunction sample of literature investigation through a CVAE-GAN hybrid architecture, and optimizing a feature vector; then training the new model by adopting a random forest algorithm to realize accurate prediction of the band edge position of the previously constructed heterojunction; and finally, the heterojunction type is judged in combination with a work function and a band edge position, the solar hydrogen production efficiency is calculated in batches by utilizing a program, and a high-efficiency heterojunction material is screened out.

The presently disclosed methods provide for preparing a stable hydrophobic self-assembled monolayer (SAM) coating, that includes preparing a SAM solution by combining a SAM compound with an initial solvent and an additional solvent and mixing, in a sealed container, the SAM solution at a first fixed temperature at a constant rotational speed for a first fixed time interval. The SAM coating is then prepared by treating a substrate to achieve pristine state, and heating the substrate at a second fixed temperature for a second fixed time interval. Then within a sealed container, immersing the substrate in the SAM solution for a third fixed time interval. Following the completion of the third fixed time interval, the substrate is removed from the sealed container and treated with the initial solvent and the additional solvent to remove excess SAM material, and heated at a third fixed temperature.

This invention discloses a TiC-Ti3C2T x The preparation method of MXene composite material includes: acid etching of Ti3AlC2 ceramic powder, washing of etching products, centrifugation, and ultrasonic layering to obtain single-layer and few-layer Ti3C2T. x Colloidal solution, then freeze-dried to obtain monolayer and few-layer Ti3C2T x Powder; TiC powder, dried Ti3C2T x TiC-Ti3C2T was prepared by high-shear emulsification and mixing of powder and polytetrafluoroethylene dissolved in anhydrous ethanol, followed by rotary evaporation, drying, and spark plasma sintering. x MXene composite material. This invention solves the problem of reinforcement dispersion in TiC ceramic matrix and addresses the issue of Ti3C2T under high-temperature sintering conditions. x The MXene phase transformation and oxidation problems are addressed, and the TiC matrix is ​​strengthened and toughened by inducing matrix grain refinement, crack deflection, crack bridging, and lamellar pull-out, thereby improving bending strength and fracture toughness.

The invention discloses a method and device for preparing a mixed crystal structure material through friction stir solid-phase deposition, and belongs to the technical field of heterostructure material preparation. According to the method, firstly, a deposition head is used for carrying out single-layer friction stir solid-phase deposition on a needed material, then a special corrugated roller is used for carrying out cold rolling to enable different positions of the surface of the deposition material to be subjected to different degrees of cold deformation, and therefore uneven high dislocation density is introduced into a deposition layer, and then next-layer friction stir solid-phase deposition is carried out on the surface of the deposition layer. In the friction-stir solid-phase deposition process, static recrystallization and static recovery rapidly occur in a local high-dislocation-density area to maintain fine grains, and grain growth rapidly occurs in a low-dislocation-density area due to heating, so that the whole deposition layer shows the mixed crystal structure characteristic that fine grains and coarse grains coexist; the block mixed crystal structure material can be prepared through stirring friction solid phase deposition and cold rolling circulation.