1162 results about "Monolayer" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The present invention discloses a self-assembled monolayer hole transport material based on an alkyl polyphosphate anchoring group, a synthesis method thereof, and an application in an inverted perovskite solar cell. The present invention uses carbazole or 3,6-diphenylcarbazole with good hole transport properties as a parent core, and achieves complete coverage and stable self-assembly of the material on the substrate surface by improving the anchoring group from traditional alkyl monophosphate to alkyl diphosphate and triphosphate. The synthesis method of the present invention is simple and the synthesis cost is low. The prepared material can achieve the dual functions of hole transport and perovskite interface passivation, while enhancing the self-assembly strength and stability. When the material is used as a hole transport layer in an inverted perovskite solar cell, a photoelectric conversion efficiency of >20% can be obtained without doping, and the material has broad application prospects.

Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

The invention discloses a method for remote epitaxial growth of a nitride film on a silicon substrate, the nitride film and a semiconductor device.The method comprises the following steps that surface nitriding treatment is conducted on the silicon substrate, so that a Si3N4 layer is formed on the surface of the silicon substrate; a single-layer graphene layer is formed on the surface of the side, provided with the Si3N4 layer, of the silicon substrate; performing remote epitaxial growth of a nitride film on the single-layer graphene layer; wherein the lattice information of the nitride film is the same as the lattice structure information of the Si3N4 layer. By adopting the technical scheme provided by the invention, remote epitaxial growth of the nitride film on the silicon substrate can be realized.

The invention discloses a dual-frequency / broadband switchable dynamic tuning metamaterial terahertz absorber which comprises M * N terahertz absorption units of a multi-layer structure, the M * N terahertz absorption units of the multi-layer structure are distributed in an M * N two-dimensional mode, and M and N are positive integers. Each terahertz absorption unit with the multi-layer structure comprises a metal substrate, a dielectric layer and a resonance layer which are sequentially arranged from bottom to top; the dielectric layer and the metal substrate are square and have the same side length; the resonance layer comprises a single-layer graphene layer with a hollow cross, and a solid cross-shaped vanadium dioxide layer is embedded in the hollow part of the single-layer graphene layer with the hollow cross; and the appearance of the single-layer graphene layer with the hollow cross is cross-shaped. The absorber can be dynamically tuned, has the characteristic of polarization insensitivity, and can keep stable absorption in an incidence angle range of 0-60 degrees. The invention further discloses a preparation method of the dual-frequency / broadband switchable dynamic tuning metamaterial terahertz absorber.

The invention provides an intermediate layer structure for a solar cell and a preparation method and application thereof. The intermediate layer structure comprises a transparent conductive oxide layer, a self-assembled monomolecular hole transport layer and a self-assembled monomolecular connecting layer for connecting the transparent conductive oxide layer and the self-assembled monomolecular hole transport layer, the material of the self-assembled monomolecular hole transport layer is a self-assembled monomolecular material with a phosphonic acid end group; the material of the self-assembled monomolecular connecting layer is selected from one or two of a silane self-assembled monomolecular layer material or a carboxylic acid self-assembled monomolecular layer material, and the silane self-assembled monomolecular layer material and the carboxylic acid self-assembled monomolecular layer material have sulfydryl groups; the problems that in the prior art, the material coverage rate of a self-assembled monomolecular hole transport layer on a TCO is low, and the material distribution of the self-assembled monomolecular hole transport layer is not uniform are solved.

The invention belongs to the technical field of superconducting wires, and discloses a Ni3Sn superconducting wire with a stable RRR value and a preparation method of the Ni3Sn superconducting wire. An oxygen-free copper rod, a Ta sheet and a thin-wall oxygen-free copper sheath are prepared into a Cu / Ta / Cu composite tube, meanwhile, subcomponents are densely arranged and loaded into a Ta barrier layer, then the Ta barrier layer is loaded into the prepared Cu / Ta / Cu composite tube, a final Nb3Sn blank with a double-layer Ta structure is obtained, and the Nb3Sn superconducting wire is prepared through multiple times of stretching. According to the invention, a double-Ta barrier layer structure in the Nb3Sn superconducting wire is realized, and the risk that an original single Ta barrier layer structure is broken in a stretching process to cause diffusion of Sn to a copper stable layer and reduce the RRR value of the wire is reduced. Compared with a traditional single-layer Ta tube superconducting wire, the RRR value of the Nb3Sn superconducting wire prepared through the method is obviously increased, and the Nb3Sn superconducting wire is more stable.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

The invention belongs to the photovoltaic field, and particularly relates to a self-assembled monolayer (SAMs), a perovskite solar cell and a preparation method. The self-assembled monolayer comprises a self-assembled monolayer molecule and a thiophene organic matter. The thiophene organic matter forms a frame structure after SAMs film forming, the stability of SAMs can be improved, meanwhile, the carrier transport efficiency of a hole transport layer is improved through the pi-pi conjugation effect, and the performance of a device is improved.

The invention provides a high-temperature-resistant optical filter and a preparation method thereof. The high-temperature-resistant optical filter comprises a substrate, a first high-temperature-resistant film layer, an optical filter film layer and a second high-temperature-resistant film layer, and the first high-temperature-resistant film layer and the second high-temperature-resistant film layer comprise a plurality of SiO2 thin film layers and Al2O3 thin film layers which are sequentially arranged in a staggered mode; the SiO2 thin film layers and the Al2O3 thin film layers are alternately arranged, expansion or contraction of each thin film layer can be mutually compensated by the adjacent layers when the temperature changes, thermal stress between single layers can be offset to a certain degree, and therefore the sensitivity of the whole film system to the temperature changes is reduced, the thin film with high thermal stability is formed, and the service life of the thin film system is prolonged. The phenomenon that the optical filter film layer is broken, warped and even falls off and fails due to high temperature can be avoided under the high-temperature test of 600-1000 DEG C; the problems of substrate deformation, film layer failure, falling and the like possibly existing in a traditional optical filter in a high-temperature environment are solved in a targeted manner.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.

The invention discloses a preparation method of a large-area and distance-adjustable gold nanoparticle single-layer superlattice film and a product and application thereof, and belongs to the technical field of nanomaterials, the method comprises the following steps: modifying the surfaces of gold nanoparticles by using sulfydryl polystyrene and 1, 8-octyldithiol to obtain double-ligand co-modified gold nanoparticles; an interface assembly strategy is adopted to enable the double-ligand co-modified gold nanoparticles to form a film at the interface of toluene and diethylene glycol, and after toluene volatilizes, the large-area gold nano single-layer superlattice film with the adjustable distance is obtained. According to the method disclosed by the invention, by accurately regulating and controlling double-ligand modification on the surfaces of the gold nanoparticles and optimizing interaction among the particles in the assembly process, accurate regulation and control of the particle spacing of the gold nanoparticle single-layer superlattice film from 1nm to 8nm are realized. The electromagnetic field intensity can be obviously enhanced by accurately regulating and controlling the particle gaps to the sub-nanometer scale, so that the material becomes an ideal SERS substrate, and possibility is provided for developing a metamaterial with a high optical index.

The invention discloses a reconfigurable acoustical holography modulation method and device based on a crystalline polymer. The programmable acoustical holography device is composed of a single-layer photoresponse crystalline polymerization flat plate, is switched between two phases when the temperature irradiated by laser changes, has a crystalline state and a non-crystalline state, and reversibly changes along with the temperature. Space sound field modulation can be realized by spatially arranging the coding units, the crystalline polymer flat plate subjected to laser patterning phase change is recovered to the previous crystalline state after being cooled, the patterned coding acoustical holography disappears, and new phase acoustical holography is written in, so that a new sound field modulation function is realized. According to the programmable phase acoustical holography device based on the crystalline polymer, the incident plane wave of the probe can be modulated into any three-dimensional complex sound field, and the programmable phase acoustical holography device is of a complete plane type, is matched with underwater acoustic impedance, and is high in acoustic energy coupling efficiency, compact in structure, easy to prepare and low in price.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

A field effect transistor including a substrate; a monolayer of a single crystal semiconducting transition metal dichalcogenide (TMD) on the substrate; a source contact and a drain contact to the strained monolayer; and a gate contact on the substrate; wherein the a gate voltage applied to the gate contact with respect to the source contact modulates a ferroelectric response of the monolayer when strained and a current through the monolayer between the source contact and the drain contact; and wherein the substrate is rigid and the monolayer experiences asymmetric lattice expansion when strained against the rigid substrate in response to an external magnetic field or the substrate is a strain engineered substrate inducing asymmetric lattice expansion of the monolayer.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

Surface-treated cutting blades are provided, comprising: (a) a metal cutting blade body; and (b) a self-assembled monolayer formed from an alkoxysilane and / or organophosphonic acid. The surface-treated cutting blades may further comprise one or more layers formed from chrome, tantalum, titanium, an aqueous solution of a metal salt, and / or an organometallic compound, applied between the cutting blade and the self-assembled monolayer. Also provided is a method of reducing deposition of a contaminant on a surface of metal cutting blade, comprising: (a) contacting the surface either directly or through an intermediate organometallic layer with a fluorinated material in a diluent; (b) forming a film on the surface; and (c) exposing the cutting blade to the contaminant.

The invention discloses a radiation-resistant high-entropy alloy magnetron sputtering coating and a preparation method thereof, and belongs to the technical field of radiation-resistant coating materials. On the basis of the multi-element synergistic effect and lamination interface design of the high-entropy alloy, FeCrNi and FeNiCrMn are used as target materials, and the coating with the nanometer lamination structure is prepared by accurately regulating and controlling the target current, the gas flow, the deposition time and other process parameters of magnetron sputtering; meanwhile, accurate control over the single-layer film thickness and the interface density is achieved by adjusting the coupling relation between the sputtering power and the deposition rate, and it is ensured that all unit layers are flat and compact, and interface combination is complete. And a multi-heterogeneous interface is formed through the design of a laminated interface, so that a defect capture network is formed, the hardness of a single-layer coating is improved, the hardening rate after irradiation can be lower than that of a traditional single-layer coating, and the problems of crystallization and brittleness failure induced by irradiation are effectively relieved.

The invention relates to a high-throughput screening method and system for a self-assembled single-layer thermal interface material and a medium. The high-throughput screening method comprises the following steps: constructing an interface heat transport simulation system based on a self-assembled monomolecular layer; screening set preparation is carried out on the end group structure, and an end group screening set and a pre-calculation set are constructed; carrying out molecular dynamics simulation on the self-assembled monomolecular layer corresponding to the pre-calculation set to obtain a physical association index; training a machine learning model by taking the physical association index as a machine learning objective function; carrying out machine learning prediction on the uncalculated screening candidate data set based on the trained machine learning model, and carrying out parallel screening of physical association indexes to obtain a simulation verification set; and carrying out molecular dynamics simulation for verification. Compared with the prior art, high-throughput screening of the self-assembled single-layer thermal interface material is achieved, and the method has important significance on solid-liquid interface heat conduction characteristic regulation and control design under data driving.

The invention discloses a wafer-level single-layer MoS2 continuous film and an APCVD film forming method and application thereof.The wafer-level single-layer MoS2 continuous film is obtained by adopting a pipe-in-pipe APCVD tubular furnace, and conducting in-situ annealing on a C-A face sapphire substrate in the mixed atmosphere of oxygen and argon before the MoS2 continuous film grows; then the sulfur powder and the C-A surface sapphire substrate are heated at the same time in the mixed atmosphere of argon and hydrogen, the molybdenum trioxide powder is heated at the same time in the argon atmosphere, the wafer-level MoS2 continuous thin film of a single-layer structure is successfully prepared, and the technical problem that in the prior art, the wafer-level single-layer MoS2 thin film prepared through an APCVD method is discontinuous is solved. The wafer-level single-layer MoS2 continuous film prepared by the method has the characteristics of high quality and good uniformity, and is beneficial to large-scale integration and application of two-dimensional electronic devices.

The invention discloses a strong-adsorption super-wetting self-assembled micromolecule and a preparation method and application thereof.The substituent groups of the self-assembled micromolecule are two arylphosphonic acids, meanwhile, the acidic N-H group of carbazole is kept unchanged, bisphosphonate anchoring shows enhanced adsorption capacity and efficient hole extraction / transmission, and the self-assembled micromolecule has the advantages that the self-assembled micromolecule is high in adsorption capacity and high in hole extraction / transmission efficiency; a reverse substituted carbazole ring contributes to a super-wetting bottom layer of perovskite, and meanwhile, compared with a small molecule of monoaryl phosphonic acid, the molecule has higher stability under long-time illumination. The strong-adsorption super-wetting self-assembly micromolecule disclosed by the invention is simple in synthesis step, low in preparation cost, high in yield and capable of realizing large-scale synthesis. By adopting the formula I as the hole transport layer of the p-i-n type perovskite solar cell, a firmly adsorbed super-infiltration self-assembly single layer can be prepared, so that a high-quality perovskite thin film is realized and energy mismatch is reduced, and the efficiency and the stability of a perovskite single cell and a laminated cell are remarkably improved.

The invention discloses a composite material with GO simultaneously loaded with Ni-TiO2, which is characterized in that tetrabutyl titanate, dimethylformamide, nickel nitrate hexahydrate, terephthalic acid and a single-layer graphene aqueous solution are used as raw materials, Ni-MOF / Ti-MIL-125 is obtained through a solvothermal method, then Ni and Ti are compounded with GO by using the hydrolysis characteristic of an MOF material to obtain Ni-Ti-GO, and finally Ni-TiO2-GO is obtained through a calcination method. A preparation method of the Ni-MOF / Ti-MIL-125 composite material comprises the following steps: 1, preparing Ni-MOF / Ti-MIL-125; 2, preparation of Ni-Ti-GO is carried out; and 3, the preparation of the Ni-TiO2-GO is carried out. When the magnesium hydride composite hydrogen storage material based on Ni-TiO2-GO is applied as a hydrogen storage material, the initial dehydrogenation temperature is 182-205 DEG C, and when the dehydrogenation temperature is 250 DEG C, the hydrogen desorption amount is 3.66-3.82 wt%; under the conditions that the hydrogen absorption temperature is 30 DEG C and the hydrogen absorption time is 3550-3600 seconds, the hydrogen absorption amount is 1.80-1.81 wt%.

The invention belongs to the technical field of two-dimensional material preparation, and particularly relates to a two-dimensional fullerene covalent network, an electrochemical synthesis method and a photoelectric detector. The method comprises the following steps: by taking a fullerene superlattice material as a cathode, an inert material as an anode and a mixed solution of quaternary ammonium salt containing hydrogen protons and a polar aprotic solvent as an electrolyte solution, performing electrochemical stripping under constant potential to obtain a large batch of two-dimensional fullerene networks within a short time. Based on intercalation and expansion of layered fullerene superlattices, in combination with an in-situ reduction assisting effect of solvated protons at the edge of Mg4C60 crystals, quaternary ammonium salt cations are electrically driven to perform rapid intercalation expansion, generated hydrogen bubbles destroy relatively strong interaction force between layers, rapid and uniform intercalation of the quaternary ammonium salt cations between the layers is promoted, and the performance of the Mg4C60 crystal is improved. The stripping efficiency is as high as 83%, the single-layer stripping rate is as high as 30%, and the stripped two-dimensional C60 covalent network keeps a complete crystal structure and a large size.

The invention discloses a dynamic linear polarization device design based on a phase-change diatomic metasurface, and relates to the technical field of phase-change metasurfaces, and the linear polarization device is a single-layer metasurface formed by a super unit composed of a dielectric material nano column 1 and a phase-change material nano column 2. Wherein the nanorod 1 is represented as a half-wave plate and is responsible for realizing the conversion of a polarization state, and the nanorod 2 can realize the change of a phase from 0 to pi by changing the state of a phase change material, so that the effect of maintaining the polarization is achieved. When light rays act on the two kinds of nano-columns at the same time, the nano-columns 2 allow transmission light to keep the original polarization state of incident light, and the nano-columns 1 change the polarization state of the transmission light. And the two kinds of transmission light are superposed subsequently, so that the transmission light output by the whole super-unit shows the linear polarization characteristic, and the polarization angle of the transmission light and the rotation angle of the nano-column are kept consistent or form an orthogonal relationship. According to the invention, a phase-change diatomic structure is adopted, so that the metasurface can realize a linear polarizer with an adjustable polarization angle under the incidence of any polarization angle.

The invention belongs to the field of micro-nano structures, and relates to a preparation method of a single-layer disc 3D structure based on nano needle tip support. According to the method, the single-layer disc 3D structure supported by the nanometer needle tip is obtained through an electron beam thermal evaporation system, a self-assembly technology and reactive ion etching, the preparation process is simple, cost is low, repeatability is good, structural stability is good, and tolerance is high. Compared with a metasurface supported by a silicon substrate, the metasurface provided by the invention has the advantages that the transient signal oscillation modulation capability of the metasurface is greatly improved by the needle point support, the opto-mechanical conversion efficiency and the oscillation quality are remarkably improved, and the quality factor is improved by several orders of magnitude compared with that of a common silicon substrate.

The invention discloses a covalent bond reinforced and toughened graphene oxide composite membrane as well as a preparation method and application of the covalent bond reinforced and toughened graphene oxide composite membrane, an aqueous solution of sulfosuccinic acid (SSA) and a single-layer graphene oxide (GO) aqueous-phase dispersion liquid are orderly assembled into a graphene oxide composite membrane with a layered structure, and then a certain amount of hydrochloric acid is used for acidification to obtain the covalent bond reinforced and toughened graphene oxide composite membrane. GO and SSA are subjected to covalent bond cross-linking under the heating condition, the covalent bond cross-linked GO-SSA graphene oxide composite film can be obtained, and the maximum strength and toughness of the covalent bond cross-linked GO-SSA graphene oxide composite film are improved by about 3 times and 4 times respectively compared with those before modification. In addition, due to the fact that graphene oxide has excellent photo-thermal performance, the GO-SSA graphene oxide composite film can also be applied to a substrate of a solar water evaporator device. The water evaporation rate of the pure GO thin film under irradiation of one sunlight intensity is 1.65 kg.m <-2 >. H <-1 >, and the water evaporation rate of the GO-SSA graphene oxide composite film can be maximally increased to 2.11 kg.m <-2 >. H <-1 >. The material has a wide application prospect in the field of solar water distillation.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The invention discloses a method for preparing a single-layer MoS2 film with a large crystal domain size on an amorphous SiO2 substrate. The method comprises the steps that S powder, MoO3 powder and a clean SiO2 / Si substrate are placed in a first temperature zone, a second temperature zone and a third temperature zone respectively, the distance between the two kinds of powder and the distance between the MoO3 powder and the substrate are regulated and controlled, and the temperature of each temperature zone is increased to the set temperature; the Ar / O2 mixed carrier gas flow which sequentially flows to the second temperature zone and the third temperature zone through the first temperature zone conveys S powder and MoO3 powder to the substrate for chemical reaction, and the large-domain-size single-layer MoS2 film grows on the SiO2 / Si substrate. A chemical vapor deposition method is adopted, the single-layer MoS2 film with good uniformity, large domain size and high-quality crystallinity is prepared on the SiO2 / Si substrate, the average domain size of the single-layer MoS2 film can reach 20-78 microns, and the method is easy to operate, low in cost and good in repeatability.

The invention relates to the technical field of multi-layer commingling production, and discloses a multi-layer commingling production interlayer interference mechanism calculation method for different types of gas reservoirs, which comprises the following steps of: constructing a single-layer dimensionless mathematical model for respectively representing each reservoir of a commingling production well, and solving a bottom hole pressure solution of the corresponding model; the known gas production rate of the commingled production well is input into the model, and a theoretical well bottom pseudo-pressure value is calculated through the superposition principle; performing historical fitting on the actual well bottom pseudo-pressure value and the theoretical well bottom pseudo-pressure value of each reservoir to obtain characterization parameters; calculating to obtain the predicted gas production rate of the corresponding model in combination with the characterization parameters, and summing the gas production rate of the commingled production well; the abscissa material equilibrium time, the ordinate regularization yield and the calculation formula of the Blasingame curve are obtained, and the gas production rate of the commingling production well is obtained through calculation; according to the obtained gas production rate of the commingled production well at the current time step, determining the influence of the reservoir interference between the obtained gas production rate of the commingled production well during multi-layer commingled production and the gas production rate of the commingled production well obtained through summation.