1029 results about "Monolayer" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The present invention discloses a self-assembled monolayer hole transport material based on an alkyl polyphosphate anchoring group, a synthesis method thereof, and an application in an inverted perovskite solar cell. The present invention uses carbazole or 3,6-diphenylcarbazole with good hole transport properties as a parent core, and achieves complete coverage and stable self-assembly of the material on the substrate surface by improving the anchoring group from traditional alkyl monophosphate to alkyl diphosphate and triphosphate. The synthesis method of the present invention is simple and the synthesis cost is low. The prepared material can achieve the dual functions of hole transport and perovskite interface passivation, while enhancing the self-assembly strength and stability. When the material is used as a hole transport layer in an inverted perovskite solar cell, a photoelectric conversion efficiency of >20% can be obtained without doping, and the material has broad application prospects.

The invention discloses a method for remote epitaxial growth of a nitride film on a silicon substrate, the nitride film and a semiconductor device.The method comprises the following steps that surface nitriding treatment is conducted on the silicon substrate, so that a Si3N4 layer is formed on the surface of the silicon substrate; a single-layer graphene layer is formed on the surface of the side, provided with the Si3N4 layer, of the silicon substrate; performing remote epitaxial growth of a nitride film on the single-layer graphene layer; wherein the lattice information of the nitride film is the same as the lattice structure information of the Si3N4 layer. By adopting the technical scheme provided by the invention, remote epitaxial growth of the nitride film on the silicon substrate can be realized.

The invention discloses a dual-frequency / broadband switchable dynamic tuning metamaterial terahertz absorber which comprises M * N terahertz absorption units of a multi-layer structure, the M * N terahertz absorption units of the multi-layer structure are distributed in an M * N two-dimensional mode, and M and N are positive integers. Each terahertz absorption unit with the multi-layer structure comprises a metal substrate, a dielectric layer and a resonance layer which are sequentially arranged from bottom to top; the dielectric layer and the metal substrate are square and have the same side length; the resonance layer comprises a single-layer graphene layer with a hollow cross, and a solid cross-shaped vanadium dioxide layer is embedded in the hollow part of the single-layer graphene layer with the hollow cross; and the appearance of the single-layer graphene layer with the hollow cross is cross-shaped. The absorber can be dynamically tuned, has the characteristic of polarization insensitivity, and can keep stable absorption in an incidence angle range of 0-60 degrees. The invention further discloses a preparation method of the dual-frequency / broadband switchable dynamic tuning metamaterial terahertz absorber.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

The invention belongs to the photovoltaic field, and particularly relates to a self-assembled monolayer (SAMs), a perovskite solar cell and a preparation method. The self-assembled monolayer comprises a self-assembled monolayer molecule and a thiophene organic matter. The thiophene organic matter forms a frame structure after SAMs film forming, the stability of SAMs can be improved, meanwhile, the carrier transport efficiency of a hole transport layer is improved through the pi-pi conjugation effect, and the performance of a device is improved.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

The invention discloses a preparation method of a large-area and distance-adjustable gold nanoparticle single-layer superlattice film and a product and application thereof, and belongs to the technical field of nanomaterials, the method comprises the following steps: modifying the surfaces of gold nanoparticles by using sulfydryl polystyrene and 1, 8-octyldithiol to obtain double-ligand co-modified gold nanoparticles; an interface assembly strategy is adopted to enable the double-ligand co-modified gold nanoparticles to form a film at the interface of toluene and diethylene glycol, and after toluene volatilizes, the large-area gold nano single-layer superlattice film with the adjustable distance is obtained. According to the method disclosed by the invention, by accurately regulating and controlling double-ligand modification on the surfaces of the gold nanoparticles and optimizing interaction among the particles in the assembly process, accurate regulation and control of the particle spacing of the gold nanoparticle single-layer superlattice film from 1nm to 8nm are realized. The electromagnetic field intensity can be obviously enhanced by accurately regulating and controlling the particle gaps to the sub-nanometer scale, so that the material becomes an ideal SERS substrate, and possibility is provided for developing a metamaterial with a high optical index.

The invention discloses a reconfigurable acoustical holography modulation method and device based on a crystalline polymer. The programmable acoustical holography device is composed of a single-layer photoresponse crystalline polymerization flat plate, is switched between two phases when the temperature irradiated by laser changes, has a crystalline state and a non-crystalline state, and reversibly changes along with the temperature. Space sound field modulation can be realized by spatially arranging the coding units, the crystalline polymer flat plate subjected to laser patterning phase change is recovered to the previous crystalline state after being cooled, the patterned coding acoustical holography disappears, and new phase acoustical holography is written in, so that a new sound field modulation function is realized. According to the programmable phase acoustical holography device based on the crystalline polymer, the incident plane wave of the probe can be modulated into any three-dimensional complex sound field, and the programmable phase acoustical holography device is of a complete plane type, is matched with underwater acoustic impedance, and is high in acoustic energy coupling efficiency, compact in structure, easy to prepare and low in price.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

Surface-treated cutting blades are provided, comprising: (a) a metal cutting blade body; and (b) a self-assembled monolayer formed from an alkoxysilane and / or organophosphonic acid. The surface-treated cutting blades may further comprise one or more layers formed from chrome, tantalum, titanium, an aqueous solution of a metal salt, and / or an organometallic compound, applied between the cutting blade and the self-assembled monolayer. Also provided is a method of reducing deposition of a contaminant on a surface of metal cutting blade, comprising: (a) contacting the surface either directly or through an intermediate organometallic layer with a fluorinated material in a diluent; (b) forming a film on the surface; and (c) exposing the cutting blade to the contaminant.

The invention discloses a radiation-resistant high-entropy alloy magnetron sputtering coating and a preparation method thereof, and belongs to the technical field of radiation-resistant coating materials. On the basis of the multi-element synergistic effect and lamination interface design of the high-entropy alloy, FeCrNi and FeNiCrMn are used as target materials, and the coating with the nanometer lamination structure is prepared by accurately regulating and controlling the target current, the gas flow, the deposition time and other process parameters of magnetron sputtering; meanwhile, accurate control over the single-layer film thickness and the interface density is achieved by adjusting the coupling relation between the sputtering power and the deposition rate, and it is ensured that all unit layers are flat and compact, and interface combination is complete. And a multi-heterogeneous interface is formed through the design of a laminated interface, so that a defect capture network is formed, the hardness of a single-layer coating is improved, the hardening rate after irradiation can be lower than that of a traditional single-layer coating, and the problems of crystallization and brittleness failure induced by irradiation are effectively relieved.

The invention relates to a high-throughput screening method and system for a self-assembled single-layer thermal interface material and a medium. The high-throughput screening method comprises the following steps: constructing an interface heat transport simulation system based on a self-assembled monomolecular layer; screening set preparation is carried out on the end group structure, and an end group screening set and a pre-calculation set are constructed; carrying out molecular dynamics simulation on the self-assembled monomolecular layer corresponding to the pre-calculation set to obtain a physical association index; training a machine learning model by taking the physical association index as a machine learning objective function; carrying out machine learning prediction on the uncalculated screening candidate data set based on the trained machine learning model, and carrying out parallel screening of physical association indexes to obtain a simulation verification set; and carrying out molecular dynamics simulation for verification. Compared with the prior art, high-throughput screening of the self-assembled single-layer thermal interface material is achieved, and the method has important significance on solid-liquid interface heat conduction characteristic regulation and control design under data driving.

The invention discloses a wafer-level single-layer MoS2 continuous film and an APCVD film forming method and application thereof.The wafer-level single-layer MoS2 continuous film is obtained by adopting a pipe-in-pipe APCVD tubular furnace, and conducting in-situ annealing on a C-A face sapphire substrate in the mixed atmosphere of oxygen and argon before the MoS2 continuous film grows; then the sulfur powder and the C-A surface sapphire substrate are heated at the same time in the mixed atmosphere of argon and hydrogen, the molybdenum trioxide powder is heated at the same time in the argon atmosphere, the wafer-level MoS2 continuous thin film of a single-layer structure is successfully prepared, and the technical problem that in the prior art, the wafer-level single-layer MoS2 thin film prepared through an APCVD method is discontinuous is solved. The wafer-level single-layer MoS2 continuous film prepared by the method has the characteristics of high quality and good uniformity, and is beneficial to large-scale integration and application of two-dimensional electronic devices.

The invention belongs to the technical field of two-dimensional material preparation, and particularly relates to a two-dimensional fullerene covalent network, an electrochemical synthesis method and a photoelectric detector. The method comprises the following steps: by taking a fullerene superlattice material as a cathode, an inert material as an anode and a mixed solution of quaternary ammonium salt containing hydrogen protons and a polar aprotic solvent as an electrolyte solution, performing electrochemical stripping under constant potential to obtain a large batch of two-dimensional fullerene networks within a short time. Based on intercalation and expansion of layered fullerene superlattices, in combination with an in-situ reduction assisting effect of solvated protons at the edge of Mg4C60 crystals, quaternary ammonium salt cations are electrically driven to perform rapid intercalation expansion, generated hydrogen bubbles destroy relatively strong interaction force between layers, rapid and uniform intercalation of the quaternary ammonium salt cations between the layers is promoted, and the performance of the Mg4C60 crystal is improved. The stripping efficiency is as high as 83%, the single-layer stripping rate is as high as 30%, and the stripped two-dimensional C60 covalent network keeps a complete crystal structure and a large size.

The invention discloses a dynamic linear polarization device design based on a phase-change diatomic metasurface, and relates to the technical field of phase-change metasurfaces, and the linear polarization device is a single-layer metasurface formed by a super unit composed of a dielectric material nano column 1 and a phase-change material nano column 2. Wherein the nanorod 1 is represented as a half-wave plate and is responsible for realizing the conversion of a polarization state, and the nanorod 2 can realize the change of a phase from 0 to pi by changing the state of a phase change material, so that the effect of maintaining the polarization is achieved. When light rays act on the two kinds of nano-columns at the same time, the nano-columns 2 allow transmission light to keep the original polarization state of incident light, and the nano-columns 1 change the polarization state of the transmission light. And the two kinds of transmission light are superposed subsequently, so that the transmission light output by the whole super-unit shows the linear polarization characteristic, and the polarization angle of the transmission light and the rotation angle of the nano-column are kept consistent or form an orthogonal relationship. According to the invention, a phase-change diatomic structure is adopted, so that the metasurface can realize a linear polarizer with an adjustable polarization angle under the incidence of any polarization angle.

The invention belongs to the field of micro-nano structures, and relates to a preparation method of a single-layer disc 3D structure based on nano needle tip support. According to the method, the single-layer disc 3D structure supported by the nanometer needle tip is obtained through an electron beam thermal evaporation system, a self-assembly technology and reactive ion etching, the preparation process is simple, cost is low, repeatability is good, structural stability is good, and tolerance is high. Compared with a metasurface supported by a silicon substrate, the metasurface provided by the invention has the advantages that the transient signal oscillation modulation capability of the metasurface is greatly improved by the needle point support, the opto-mechanical conversion efficiency and the oscillation quality are remarkably improved, and the quality factor is improved by several orders of magnitude compared with that of a common silicon substrate.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The invention discloses a method for preparing a single-layer MoS2 film with a large crystal domain size on an amorphous SiO2 substrate. The method comprises the steps that S powder, MoO3 powder and a clean SiO2 / Si substrate are placed in a first temperature zone, a second temperature zone and a third temperature zone respectively, the distance between the two kinds of powder and the distance between the MoO3 powder and the substrate are regulated and controlled, and the temperature of each temperature zone is increased to the set temperature; the Ar / O2 mixed carrier gas flow which sequentially flows to the second temperature zone and the third temperature zone through the first temperature zone conveys S powder and MoO3 powder to the substrate for chemical reaction, and the large-domain-size single-layer MoS2 film grows on the SiO2 / Si substrate. A chemical vapor deposition method is adopted, the single-layer MoS2 film with good uniformity, large domain size and high-quality crystallinity is prepared on the SiO2 / Si substrate, the average domain size of the single-layer MoS2 film can reach 20-78 microns, and the method is easy to operate, low in cost and good in repeatability.

The invention relates to the technical field of multi-layer commingling production, and discloses a multi-layer commingling production interlayer interference mechanism calculation method for different types of gas reservoirs, which comprises the following steps of: constructing a single-layer dimensionless mathematical model for respectively representing each reservoir of a commingling production well, and solving a bottom hole pressure solution of the corresponding model; the known gas production rate of the commingled production well is input into the model, and a theoretical well bottom pseudo-pressure value is calculated through the superposition principle; performing historical fitting on the actual well bottom pseudo-pressure value and the theoretical well bottom pseudo-pressure value of each reservoir to obtain characterization parameters; calculating to obtain the predicted gas production rate of the corresponding model in combination with the characterization parameters, and summing the gas production rate of the commingled production well; the abscissa material equilibrium time, the ordinate regularization yield and the calculation formula of the Blasingame curve are obtained, and the gas production rate of the commingling production well is obtained through calculation; according to the obtained gas production rate of the commingled production well at the current time step, determining the influence of the reservoir interference between the obtained gas production rate of the commingled production well during multi-layer commingled production and the gas production rate of the commingled production well obtained through summation.

The present invention relates to a method of forming a layer of a compound having a thickness selected in the range of a monolayer to several mm on a substrate, such as a single crystal wafer, the substrate being arranged in a process chamber comprising one or more sources of source material. The invention further relates to a compound optionally obtained by this method.

The invention relates to the field of nano photonics and optical materials, in particular to an exciton state energy level detection method based on a plasmon enhanced nonlinear spectrum, which comprises the following steps: constructing a mixed nano cavity structure in which a single-layer two-dimensional material is coupled with a plasmon cavity; collecting a two-photon photoluminescence spectrum, a second harmonic spectrum and a third harmonic spectrum of the single-layer two-dimensional material in the mixed nanocavity structure; the intensity of a nonlinear optical signal is improved through a local enhancement effect of plasmons; according to the two-photon photoluminescence spectrum, the second harmonic spectrum and the third harmonic spectrum of the single-layer two-dimensional material, the dark exciton state energy level, the bright state energy level, the dark exciton state energy level and the high-energy exciton state energy level of the single-layer two-dimensional material are determined. According to the method, the energy level of the Rydberg exciton state of the semiconductor material with the nanoscale thickness can be accurately detected.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate; forming a copper column structure on the substrate, wherein the copper column structure comprises a plurality of layers of copper column sections which are sequentially stacked and connected; the forming method of the copper column structure comprises the steps that a plurality of photoetching electroplating processes are carried out on a substrate, a layer of copper column section is formed in each photoetching electroplating process, and then the thickness of a photoetching layer formed in each photoetching electroplating process can be reduced, so that the technological difficulty of forming the photoetching layer and photoetching development is reduced. And the electroplating time of each layer of copper cylinder section is effectively shortened compared with the time of electroplating the whole copper cylinder at one time, so that the phenomena of swelling, cracking and the like of the photoetching layer in the electroplating operation for a long time can be avoided. The depth-to-width ratio of the single-layer copper column section is small, the exchange efficiency of copper plating liquid medicine can be guaranteed, and then the copper nodule phenomenon is reduced. And the copper column structure is divided into multiple layers of copper column sections, so that the height limitation of electroplating the whole copper column at a time can be broken through, and the copper column structure has higher designability.

The invention provides a hole transport layer, a preparation method and application thereof, and a perovskite solar cell, and belongs to the technical field of photoelectric materials and devices. The preparation method of the hole transport layer comprises the following steps: (1) preparing an initial self-assembled monomolecular layer by adopting a self-assembled monomolecular solution; (2) performing organic solvent steam treatment on the initial self-assembled monomolecular layer to prepare a self-assembled monomolecular layer; the self-assembled monomolecules are insoluble or insoluble in the organic solvent; the polarity of the organic solvent is similar to that of the tail group of the self-assembled monomolecule. The organic solvent steam which is insoluble or insoluble in self-assembled monomolecules and has the polarity similar to that of the tail groups of the self-assembled monomolecules is adopted, ordered arrangement of the self-assembled monomolecules is promoted, free rotation and orientation adjustment of the molecules along the surface of the substrate are promoted by utilizing the swelling effect of the organic solvent steam, and the self-assembled monomolecules are uniformly distributed. The defect density of the hole transport layer is reduced, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

The invention relates to the technical field of particle therapy, and provides a vacuum membrane window structure and a processing method.The structure comprises a membrane window flange, a supporting lining net, a non-metal polymer film, a membrane window pressing plate, a first sealing piece and a second sealing piece; the membrane window flange is provided with an annular positioning part; the supporting lining net is arranged on the annular positioning part; the non-metal polymer film is arranged on the side, away from the annular positioning part, of the supporting lining net and plated with a metal layer. The film window pressing plate is arranged on the side, away from the supporting lining net, of the non-metal polymer film. The first sealing piece is arranged between the periphery of the supporting lining net and the non-metal polymer film, and the second sealing piece is arranged between the periphery of the annular positioning part and the periphery of the non-metal polymer film; the non-metal polymer film, the film plating layer and the supporting lining net are tightly attached together, so that the film thickness is greatly reduced, the vacuum performance of a single-layer film is better than that of an existing double-layer structure, energy loss, scattering and neutron yield during beam film penetrating are reduced, and beam quality and treatment precision are improved.

The invention relates to the technical field of composite film strength detection, and discloses a composite film peel strength testing device which comprises a testing platform, two pulling sliding plates slidably mounted in the two extending parts respectively and capable of being synchronously and mutually close to or away from each other for adjustment, and the two pulling sliding plates are arranged on the testing platform. The opposite ends of the two pulling sliding plates are each provided with a clamp used for clamping a single-layer film of a composite film separation section. The clamping assembly is arranged in the test platform and is used for clamping and limiting the fitting section of the composite membrane and enabling the separation section and the fitting section of the composite membrane to form a Y-shaped state; and two groups of test assemblies. Through the Y-shaped constant-angle stripping design, the stripping surface of the composite film is uniquely locked, the stripping angle is kept unchanged in the whole testing process, and the effects that stripping cracks are stably limited to a specified unique interface, crack initiation is controllable and deviation is avoided are achieved.

The invention discloses a high-entropy alloy coating and a preparation method thereof, and relates to the technical field of preparation of high-entropy alloy coatings. The high-entropy alloy and the coating of the high-entropy alloy do not contain silicon elements, and the preparation method comprises the steps that according to the composition proportion of the high-entropy alloy, a magnetron sputtering technology is adopted, metal elementary substance targets of all components serve as sputtering target materials for sputtering, elementary substance films are sequentially deposited on a base body, and a multi-layer film precursor is formed; and then the multi-layer film precursor is subjected to vacuum annealing, so that the single-layer uniform high-entropy alloy coating is obtained. According to the method, accurate preparation of the multi-layer film precursor can be achieved by accurately controlling the sputtering rate or sputtering power of all elements, then the elements in the multi-layer film precursor are fully mixed through vacuum annealing treatment, and the uniform high-entropy alloy coating is formed. The high-entropy alloy coating prepared by the process, such as an AlCoCrFeNi high-entropy alloy coating, has excellent structural uniformity, and is suitable for the high and new technical fields of aerospace, energy engineering and the like.

The invention relates to the field of hydrogen sensors, in particular to a palladium-based multilayer film hydrogen sensor based on an abnormal Hall effect as well as a preparation method and application of the palladium-based multilayer film hydrogen sensor. The palladium-based multilayer film hydrogen sensor based on the abnormal Hall effect comprises a substrate, a film structure with a Hall rod pattern and an electrode layer which are sequentially arranged from bottom to top, the thin film structure with the Hall rod pattern sequentially comprises a Pd single-layer thin film and a (Co / Pd) X multi-layer thin film from bottom to top, wherein X represents the cycle number of the (Co / Pd) X multi-layer thin film; x is an integer from 1 to 10; in each period of the (Co / Pd) X multilayer film, an arrangement mode that the Co layer is arranged on the lower portion and the Pd layer is arranged on the upper portion is adopted. The palladium-based multilayer film hydrogen sensor based on the abnormal Hall effect has the advantages of being obvious in hydrogen detection current signal, high in environmental gas interference resistance and controllable in hydrogen detection concentration.

The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.