396 results about "Monolayer" patented technology

The invention discloses a method for preparing a single-layer tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the growth time of hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a tungsten diselenide nanoband is carried out by utilizing a constant-pressure chemical vapor deposition method; physicochemical characteristics of a one-dimensional transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to semiconductor properties can be displayed from the edge to the center of a wider band; the tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the special property; industrial production of the tungsten diselenide nanoband can be realized through an experimental method of the invention.

The invention provides a continuous depth gradually-changing grating structure based on a silicon carbide substrate and a preparation method thereof. The preparation method comprises the following steps: forming a sacrificial layer with gradually-changing thickness on the silicon carbide substrate; etching is carried out by adopting a two-step plasma etching process; and polishing the surface through a plasma polishing process. According to the invention, the gradient sacrificial layer is combined with two-step plasma etching, and a high-precision continuous depth gradient grating structure is realized on the silicon carbide substrate, so that the diffraction requirements of RGB three-color wavelengths are met; the micro-groove defect in the etching process is eliminated, the problem that the depth-to-width ratio and the surface quality cannot be considered in the traditional process is solved, and a key technical support is provided for mass production of the single-layer full-color optical waveguide; the transmission loss of the optical waveguide is reduced by controlling the surface roughness; and the product yield is improved, the production cost is reduced, and the method is suitable for large-scale production.

The invention relates to a preparation method of an etching-resistant and wear-resistant Y2O3-AlxOy composite coating. The preparation method comprises the following steps: carrying out ultrasonic cleaning on a corrosion-resistant matrix; performing plasma bombardment cleaning activation on the surface of the corrosion-resistant matrix; a Y2O3 coating and an AlxOy coating are alternately deposited on a corrosion-resistant base body in a double-target magnetron sputtering mode to form the Y2O3-AlxOy composite coating, the sputtering power of a Y target is larger than that of an Al target, and the ratio of x to y in the AlxOy coating is larger than 1. According to the method, the amorphous AlxOy coating dominated by the metal state is introduced into the Y2O3 coating, growth of Y2O3 columnar crystals is continuously broken, crystal grains are refined, formation of intergranular easy-to-etch point locations is inhibited, and an yttrium aluminum oxide composite strengthening phase is formed at an interface, so that plasma etching resistance is improved; the thickness of a single-layer coating in the composite coating is very thin; under the action of growth stress, the structure of the coating presents a wave-shaped microstructure and a soft and hard alternate mechanical structure, and the soft and hard alternate mechanical structure is beneficial to inhibiting generation of transverse cracks, guiding friction crack level expansion, prolonging the friction life of the coating and reducing the wear rate.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite layer, an electron transport layer and a second electrode which are stacked in sequence. The material of the hole transport layer comprises a biomolecular material which is fixed on a self-assembly monomolecular layer material through an intermolecular force, and the biomolecular material comprises one or more of guanine, adenine, thymine, uracil, cytosine, hydroxymethylcytosine, xanthine, hypoxanthine, 6-mercaptopurine and corrin. According to the perovskite cell provided by the invention, the biomolecular material with a plurality of nitrogen heterocyclic structures and amino groups is added to generate multipoint hydrogen-bond interaction and pi-pi accumulation with the tail end of the SAM, so that the orderliness of molecular arrangement is improved, and the dipole direction and strength of the whole interface are regulated and controlled; and a coordination bond or hydrogen bond network is formed by the coordination compound and uncoordinated cations or anions in perovskite, so that interface defects are effectively passivated, and the thermal stability and the humid and hot life of a device are enhanced.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The invention relates to the technical field of composite film strength detection, and discloses a composite film peel strength testing device which comprises a testing platform, two pulling sliding plates slidably mounted in the two extending parts respectively and capable of being synchronously and mutually close to or away from each other for adjustment, and the two pulling sliding plates are arranged on the testing platform. The opposite ends of the two pulling sliding plates are each provided with a clamp used for clamping a single-layer film of a composite film separation section. The clamping assembly is arranged in the test platform and is used for clamping and limiting the fitting section of the composite membrane and enabling the separation section and the fitting section of the composite membrane to form a Y-shaped state; and two groups of test assemblies. Through the Y-shaped constant-angle stripping design, the stripping surface of the composite film is uniquely locked, the stripping angle is kept unchanged in the whole testing process, and the effects that stripping cracks are stably limited to a specified unique interface, crack initiation is controllable and deviation is avoided are achieved.

The invention relates to a Janus type heterojunction material as well as a calculation method and application of the Janus type heterojunction material in photocatalytic water decomposition, and belongs to the technical field of heterojunction materials. The upper layer of the material is a 1T-phase GeSe single layer, the lower layer of the material is a 1T-phase SnSSe single layer, and the material is divided into two configurations of GeSe / SSnSe and GeSe / SeSnS according to interface atom arrangement. Modeling and simulation calculation are carried out through VESTA and VASP software, and the result shows that the material has the direct Z-type heterojunction characteristic, photon-generated carrier separation can be effectively promoted, the light absorption range is widened, the photocatalytic oxidation reduction capacity and the solar energy-hydrogen energy conversion efficiency are remarkably improved, and a new strategy is provided for developing efficient photocatalysts.

The invention discloses a low-temperature-impact-resistant high-strength bolt for a high-cold railway and a heat treatment method of the low-temperature-impact-resistant high-strength bolt. The bolt is of a special three-layer structure of a base body, a bionic nanometer laminated layer and a high-entropy alloy nitriding layer, wherein the grain size of the base body reaches the ASTM8 level or above; the bionic nano laminated layer is formed by alternately depositing TiN and VC, and the thickness of a single layer is less than 50nm; the high-entropy alloy nitriding layer is made of AlCoCrFeNiTi, the thickness is larger than 50 microns, the heat treatment method comprises the steps of grain refinement pretreatment, lamination preparation through magnetron sputtering, high-entropy alloy laser cladding, electromagnetic field assisted nitriding, oil quenching, cryogenic oscillation, tempering and the like, and intelligent quality control means such as a machine learning model, sound pressure feedback and image recognition are integrated. According to the scheme, the impact energy of the bolt at the temperature of minus 60 DEG C is higher than 55 J, the tensile strength is larger than 1200 MPa, the surface hardness is not lower than 1200 HV, the interface bonding critical load is higher than 80 N, and the problems of low-temperature brittle fracture, obdurability contradiction and quality consistency of the high and cold bolt are solved.

The application relates to a ferroelectric monolayer vanadium trichloride film and a preparation method thereof. The method comprises the following steps: evaporating and depositing VCl3 powder on the surface of a NbSe2 substrate under an ultrahigh vacuum atmosphere, and performing annealing treatment, so that the ferroelectric monolayer vanadium trichloride film is obtained. The sample preparation strategy of molecular beam epitaxy under an ultrahigh vacuum environment is used, high-purity VCl3 powder is evaporated and deposited on a NbSe2 substrate, an atomically flat monolayer VCl3 sample is obtained through annealing treatment, in-situ scanning tunneling microscope technology and scanning tunneling spectrum technology are combined, and it is determined that the monolayer VCl3 is a semiconductor material with ferroelectricity. The method provides a new method and idea for introducing ferroelectricity in the family of transition metal trichlorides, has high application potential and scientific research value, meanwhile, the successful introduction of ferroelectricity in the system also provides a new platform for carrying out multi-state regulation and research.

The application discloses a preparation method of a novel composite SERS substrate based on MXene and trace detection application thereof, and particularly relates to the technical field of nanomaterials and spectral detection technology, wherein the substrate takes single-layer MXene nanosheets as a carrier; after synthesis, ZnO crystal seeds are subjected to mediated growth, and the Zeta potential difference between the MXene nanosheets and the ZnO crystal seeds is utilized to make the ZnO crystal seeds loaded on the surface of the MXene nanosheets through electrostatic adsorption to obtain a MXene / ZnO composite material; an Ag@Au core-shell structure is modified on the MXene / ZnO composite material, and finally, a MXene / ZnO@Ag@Au composite material, namely the composite SERS substrate, is obtained.

The present invention relates to a method for manufacturing single crystal graphene having a large area and extremely low surface roughness, and graphene manufactured by the manufacturing method. The method for manufacturing graphene according to the present invention comprises the steps of: (S1) introducing a metal substrate into a sealed chamber, and then heating and pressurizing the inside of the sealed chamber; (S2) supplying a gaseous carbon-containing compound into the chamber to grow graphene on the metal substrate; and (S3) cooling the chamber, wherein a first gas is continuously supplied to the sealed chamber in steps (S1) to (S3).

The presently disclosed methods provide for preparing a stable hydrophobic self-assembled monolayer (SAM) coating, that includes preparing a SAM solution by combining a SAM compound with an initial solvent and an additional solvent and mixing, in a sealed container, the SAM solution at a first fixed temperature at a constant rotational speed for a first fixed time interval. The SAM coating is then prepared by treating a substrate to achieve pristine state, and heating the substrate at a second fixed temperature for a second fixed time interval. Then within a sealed container, immersing the substrate in the SAM solution for a third fixed time interval. Following the completion of the third fixed time interval, the substrate is removed from the sealed container and treated with the initial solvent and the additional solvent to remove excess SAM material, and heated at a third fixed temperature.

The invention discloses a culture method of in-vitro uniform monolayer cells of prawns, and belongs to the technical field of biology. The method comprises the following steps: (1) obtaining lymphatic tissues of a last-stage prawn at the early stage of shelling, completely stripping an outer membrane to obtain internal tissues, and cutting the internal tissues into small tissue blocks; (2) cleaning the small tissue blocks, inoculating the small tissue blocks to a culture plate coated with a gelatin solution, adding a complete culture solution into an inoculation system at intervals within 12 hours after inoculation for culture, replacing the complete culture solution 24-48 hours after inoculation, and inducing tissue cells to continuously migrate to form an in-vitro cell layer; (3) blowing and beating the cell culture to obtain a cell suspension, and centrifuging to obtain a cell monolayer; and (4) suspending the cell monolayer by adopting a complete culture solution, then inoculating the cell monolayer into a culture plate coated with a gelatin solution, and culturing to obtain the in-vitro uniform monolayer cells of the prawns. According to the method, the prawn monolayer cells which are long in in-vitro survival time, uniform and stable and are cultured in vitro can be obtained, and an important tool is provided for related virology research.

The application provides a preparation method of a perovskite / crystalline silicon laminated solar cell and the cell. The self-assembled monolayer is blocked from adsorbing on a tunneling layer through a non-full-coverage insulating layer, so as to achieve the effect of a non-full-coverage hole transport layer. On one hand, the lateral conduction network of the hole transport layer can be directly cut off, so that the holes can only migrate longitudinally along the preset transport channel area, and the hole diffusion loss is reduced from the root; on the other hand, the insulating layer is used as a blocking material, and due to the excellent chemical inertness and thermal stability, the insulating layer can be used as a part of interface barrier to inhibit the chemical reaction between the perovskite layer and the SAM layer, slow down the decomposition rate of the perovskite crystal caused by interface erosion, and moreover, the non-full-coverage design can reduce the total amount of SAM molecules by 40%-55%, the SAM molecules in the transport channel area are not densely accumulated, and the problems of transport channel rupture and defect increase caused by molecular aggregation in the traditional structure are avoided.

The invention provides a curved surface polarization torsion reflecting surface and an antenna using the same, and belongs to the technical field of antennas. The curved surface polarization torsion reflection surface comprises a curved surface dielectric plate, and a metal bottom plate and an electromagnetic metasurface which are respectively arranged on the outer side and the inner side of the curved surface dielectric plate; the electromagnetic metasurface is formed by periodically arranging a plurality of single-layer electromagnetic metasurface units. The single-layer metasurface unit with the polarization torsion function is conformal on the curved surface, so that the technical problems that a traditional multi-layer planar polarization torsion structure is complex to process, curved surface conformal is difficult, and the performance is deteriorated after conformal are solved. The reflecting surface is preferably a paraboloid, so that the incident wave polarization torsion is realized, and the spherical wave can be converted into the plane wave to improve the antenna gain. The metasurface unit keeps good cross polarization reflection performance within the wide incidence angle range of 0-40 degrees, is suitable for curved surface conformal design, can be integrally formed through 3D printing, and is easy and convenient to machine and stable in performance.

The application discloses an interlayer-coupled reduced graphene oxide (rGO) film, a preparation method and application thereof. Although single-layer graphene sheets have excellent intrinsic thermal conductivity, stacked graphene films have serious thermal anisotropy and poor out-of-plane thermal transport performance due to weak van der Waals interaction between layers. The application discloses a strategy for scalable preparation of an interlayer-coupled rGO film, which is connected by covalent carbon bonds between stacked layers. A representative 200 μm-thick film prepared by the strategy has in-plane and out-of-plane thermal conductivities of 1465±63 W·m ‑1 ·K ‑1 and 14.0±1.2 W·m ‑1 ·K ‑1 , respectively. Under an extreme heat flux of 1200 W·cm ‑2 , the film can reduce temperature by 110℃ within 20 s and has excellent cycle stability. The film has high thermal and electrical conductivity, and can realize fast, uniform and durable electrothermal heating, and can be applied to the field of advanced thermal management.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

The present application provides a preparation method of ordered interval microporous structure, which comprises the following steps: firstly, coating a release agent on a substrate to obtain a substrate with a release agent layer; then, constructing a single-layer array distribution of monodisperse template microspheres on the release agent layer of the substrate to obtain a single-layer microsphere template; then, pouring a polymer precursor liquid on the template microspheres of the single-layer microsphere template and solidifying; then, demolding; and then, removing the release agent and the template microspheres adhered in the obtained solidified polymer, so as to obtain a polymer template with ordered interval microporous structure. Based on the ordered interval microporous structure, the present application further provides a preparation method of microsphere array. The present application can solve the problems of the existing processing method of high-size-precision ordered interval microporous structure, such as dependence on expensive equipment, harsh preparation conditions and complex process, and realizes simple and efficient preparation of ordered interval microporous structure and microsphere array.

The invention relates to a phase shift mask substrate and a dynamic magnetron sputtering preparation method thereof, a MoSi-based gradient film layer is continuously and dynamically deposited on the substrate, and the method comprises the following steps: carrying out first-stage deposition on the substrate by adopting a molybdenum-silicon alloy target so as to form a transition layer; carrying out second-stage deposition on the transition layer to form a main body functional layer through deposition; and third-stage deposition is carried out on the main body functional layer to form a surface modification layer through deposition, and the MoSi-based gradient film layer is obtained. The invention provides a one-step sputtering deposition method capable of dynamically and accurately regulating and controlling, so that the inherent contradiction between the performance and the stress of a single-layer uniform film is fundamentally solved, and the complexity and the uncertainty of a traditional multi-step process are avoided.

This invention relates to the field of memory technology, specifically to a ferroelectric metal-controlled memristor and chip based on a single layer of gallium oxide and a single layer of blue phosphorus. The ferroelectric metal-controlled memristor includes a top electrode layer, a control layer, and a bottom electrode layer, which are sequentially contacted from top to bottom. It combines the unique ferroelectric properties of gallium oxide with the excellent electrical properties of blue phosphorus, a two-dimensional material. The control layer formed by these two materials interacts through van der Waals forces, and the polarization direction of the gallium oxide layer is switched by applying voltages in different directions to the heterojunction, enabling memristor writing and reading. This avoids the interface defects and lattice mismatch problems introduced by strong chemical bonds in traditional memristors, thus reducing the operating power consumption of the memristor while improving its read / write speed and stability.

The application discloses a preparation method and application of LCP film and belongs to the technical field of polymer material processing. The preparation method of the LCP film is characterized by comprising the following steps: S1, melt extrusion; S2, mold preparation; S3, mold traction; S4, mold inflation; S5, film bubble flattening; and S6, film pressing, so that the LCP film is obtained. The preparation method combines the film blowing method and the calendering method, first utilizes the bidirectional rotating mold head with the outer mold body and the core rod having opposite rotating directions to regulate and control the molecular orientation arrangement structure in the LCP film, makes the LCP molecular structure form a woven net structure, avoids the problem that the longitudinal and transverse tensile properties are greatly different due to the LCP molecular orientation order, then through the pressing step, the double-layer LCP film is pressed into a single-layer LCP film, and the problems of poor film thickness uniformity and uneven film winding are solved.

This invention relates to the field of solar cell technology, and in particular to a self-assembled monolayer based on a fluorinated alcohol solvent, its preparation method, and a solar cell. The method involves adding a fluorinated alcohol as a co-solvent to a solution of the self-assembled monolayer material, which is then deposited onto the surface of a metal oxide electrode to construct a hole transport layer. The hydroxyl groups of the fluorinated alcohol can form hydrogen bonds with the phosphorus-oxygen double bonds in the phosphonic acid groups, reducing the electron density of the phosphorus atoms and thus weakening the chemisorption barrier of the self-assembled monolayer on the electrode surface, promoting the formation of a uniform and dense monolayer film. The resulting interface layer effectively suppresses interface defects and promotes hole extraction. Organic solar cells prepared using this method exhibit excellent performance in terms of energy conversion efficiency, stability, and large-area processing adaptability. This invention features a simple process, low cost, and good reproducibility, and has promising prospects for industrial application.

The invention relates to a blown film plant (BA) for continuously producing an extruded and simultaneously biaxially stretched, single- or multi-layered film (PF) made of plastic in the form of a tubular film (PFS), wherein the blown film plant (BA) has a vertical flat fixing unit (VFFU) having a heating means (VFFUHU), to a process for continuously producing the tubular film (PFS), and to corresponding uses. A vertical flat fixing unit (VFFU) for an extruded and simultaneously biaxially stretched, single- or multi-layered film (PF) made of plastic in the form of a laid-flat tubular film (PFS), wherein the machine direction (MD) of the vertical flat fixing unit (VFFU) deviates from the vertical (V) by at most 15°, preferably at most 10°, more preferably at most 5°, and is especially parallel to the vertical (V); wherein the vertical flat fixing unit (VFFU) has a holder means (HE); wherein the holder means (HE) is suitable or configured for holding the laid-flat tubular film (PFS), preferably at its lateral edges; wherein the holder means (HE) is suitable or configured for guiding or moving or transporting the laid-flat tubular film (PFS) in the machine direction (MD) of the vertical flat fixing unit (VFFU); wherein the holder means (HE) is not suitable or configured for stretching the laid-flat tubular film (PFS) in the machine direction (MD) or in the transverse direction (TD) of the vertical flat fixing unit (VFFU) when said laid-flat tubular film (PFS) is guided in the vertical flat fixing unit (VFFU); and wherein the holder means (HE) is preferably configured such that it allows relaxing of the laid-flat tubular film (PFS) of at most 15%, preferably at most 10%, especially at most 5%, in the machine direction (MD), in the transverse direction (TD) or in each of the machine direction (MD) and the transverse direction (TD) of the vertical flat fixing unit (VFFU) when the laid-flat tubular film (PFS) is guided or moved or transported; wherein the vertical flat fixing unit (VFFU) has a heating means (VFFUHU) for heating the laid-flat tubular film (PFS), wherein the heating means (VFFUHU) of the vertical flat fixing unit (VFFU) can be used to supply the laid-flat tubular film (PFS) with heated air, infrared radiation, ultrasonic radiation, steam or any combination thereof, preferably heated air, infrared radiation or steam, as heating medium.

The invention relates to a method for epitaxial growth of single-layer graphene on a silicon carbide substrate, and belongs to the technical field of graphene preparation. The method comprises four steps of low-temperature high-vacuum preheating, polymer decomposition under vacuum, graphene growth and cooling. The growth substrate comprises two carbon source sheets of which the C surfaces are coated with polymers and a sheet to be grown, silicon carbide is adopted as the substrates of the carbon source sheet and the to-be-grown sheet, the substrates are placed in a growth graphite crucible, and the Si surface of the silicon carbide is placed downwards; the polymer is a solid carbon source. By adding a specific number of external carbon sources, the condition of rapid decomposition of the step edge can be effectively relieved, and the carbon concentration gradient during graphene growth is balanced, so that the growth of graphene is more inclined to quasi-equilibrium state growth. The graphene can be preferentially nucleated in the step, so that the condition of step coalescence caused by rapid decomposition of the edge of the step is inhibited, and the atomic-scale flat and clean silicon carbide-based epitaxial graphene can be obtained.

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

Provided are an image forming method and a mono-sheet laminate for forming a discharge image in which the reproducibility of discharge behavior is high and the occurrence of processing defects due to dust adhesion or the like is suppressed. The image forming method involves using a mono-sheet laminate (10) obtained by integrating a transparent supporting body (1) on which an image receiving element (2) and an auto-positive silver halide photographic photosensitive element (3) are laminated, a cover sheet (4) covering the photosensitive element (3), a conductive connecting member (6) for grounding which is connected to a peripheral part of a surface of the transparent supporting body (1), the surface being on the reverse side to the surface on which the image receiving element (2) is laminated, and a pod containing an alkaline processing liquid and forming an image on the mono-sheet laminate (10). The image forming method involves performing discharge on the mono-sheet laminate (10) from an electrode (32a) of a DC discharge device (30) disposed at a distance of 0-15 mm from a surface of the cover sheet (4) in the normal direction of the surface, and developing the alkaline processing liquid contained in the pod between the photosensitive element (3) and the cover sheet (4) to form a discharge image.

The application discloses a method for calculating the thermal conductivity of MXene-PI based on molecular dynamics, and belongs to the technical field of thermal conductivity simulation calculation. The method firstly optimizes PI molecular chains, and constructs a PI model based on the molecular chains to carry out relaxation calculation to obtain the lowest energy configuration; then the lowest energy configuration is sequentially subjected to structure optimization, annealing, isothermal-isobaric ensemble and canonical ensemble to obtain a globally optimal PI model; the glass transition temperature of the PI model is predicted to obtain a density-temperature change curve, and then the glass transition temperature of the PI model is obtained to determine whether the model is reasonable; then the initial unit cell of the MXene material is subjected to structure relaxation, and the simulation parameters are optimized, and the surface of the stable unit cell is subjected to functional group modification to obtain a single-layer structure model of the MXene; finally, a MXene-PI composite material model is assembled; heat transfer analysis is carried out on the composite material model by using a non-equilibrium state molecular dynamics method to realize thermal conductivity calculation. The method has clear prediction and guidance value.

The invention relates to the technical field of structural lightweight and structural energy absorption, in particular to a multi-level interpenetrating lattice structure with high energy absorption and high bearing performance, which is composed of a macroscopic hierarchical structure and a microscopic hierarchical structure, the macroscopic hierarchical structure is located inside the microscopic hierarchical structure, and the microscopic hierarchical structure is located inside the macroscopic hierarchical structure. The macroscopic hierarchical structure and the mesoscopic hierarchical structure are two types of three-period minimal curved surface lattice structures with different unit cell sizes. The multi-level interpenetrating lattice structure is formed by combining in a multi-level combination mode, the bearing performance and the energy absorption performance of the whole structure can be improved, and the bearing performance and the energy absorption performance of the multi-level interpenetrating lattice structure are superior to those of a single-level lattice structure.

The application discloses an Al-doped two-dimensional MnO2 adsorption structure for SO2 immobilized adsorption and application thereof. The Al-doped two-dimensional MnO2 adsorption structure for SO2 immobilized adsorption comprises a two-dimensional MnO2 monolayer as a substrate, and Al modified atoms on H sites on the surface of the substrate, wherein the doping concentration of the Al modified atoms is 2% to 4%. A stable Al-O interaction interface is formed between the Al modified atoms and O atoms in SO2 molecules, so that a strong chemical adsorption interface dominated by ionic bond interaction is formed between SO2 and the adsorption structure; in a preferred configuration, the adsorption energy of the adsorption structure for SO2 is -2.154 eV, the interface charge transfer amount is -0.49 e, and the Al-O interaction distance is 1.737 Å. The adsorption structure can be used for irreversible capture, enrichment and immobilized adsorption of SO2, and industrial waste gas desulfurization and capture of toxic gas containing sulfur.

Provided herein are a monomolecular compound for self-assembly, a self-assembled monolayer using same, a current collector using same, an all-solid-state battery using same, and a manufacturing method therefor, wherein the monomolecular compound comprises: a functional group containing fluorine (F); a spacer including CxF2x (6≤x≤12) or CxF2x−4H4 (6≤x≤12); and a reactive group containing phosphorus (P) or silicon (Si).