The invention discloses a glass
interposer stacked substrate and a
semiconductor packaging structure, and the glass
interposer stacked substrate is characterized in that a traditional single substrate is divided into independent glass sub-substrates made of different glass materials, and the glass sub-substrates are stacked through
metal bonding and are filled with
filling materials to form a multi-glass-material integrated
interposer substrate; therefore, the sub-substrates can be processed in parallel, a multi-layer stacking process is simplified, alignment deviation and lamination defect risks are reduced, the manufacturing yield is remarkably improved, and the
processing time is shortened; high-density integration is realized by stacking multiple
layers of sub-substrates, and glass sub-substrates of different levels adopt glass substrates of different characteristics based on thermal-electric-mechanical characteristic differences of different chips in the AI module. The problems that in the prior art, a multi-layer process of a single
glass material substrate is complex, heat-
electricity-force requirements of multiple chips cannot be met,
signal loss is high, heat dissipation is poor, and
machining difficulty is large are solved.