1147 results about "Composite substrate" patented technology

Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer include a glass former and a glass modifier. The boron-glass layer includes a boron compound comprising a mixture of boron carbide (B4C) powder and cubic boron nitride (BN) powder.

The invention provides a slow-release ecological grass blanket for improving an eroded inferior land and a construction method of the slow-release ecological grass blanket. The ecological grass blanket comprises a bottom intercepting layer, a nutrient slow-release layer, a seed triggering layer and a surface fixing layer which are sequentially arranged on the soil surface of the eroded inferior land. The bottom interception layer at least comprises a water-soluble lower film arranged on the soil surface and a first composite substrate layer arranged on the water-soluble lower film; the nutrient slow-release layer at least comprises an organic fertilizer mixture particle layer arranged on the first composite substrate layer and a water-soluble upper film arranged on the organic fertilizer mixture particle layer; the seed triggering layer comprises a degradable fiber lower net arranged on the water-soluble upper film and a composite seed belt arranged on the degradable fiber lower net; the surface fixing layer comprises a second composite substrate layer arranged on the composite seed belt and a degradable fiber net arranged on the second composite substrate layer. The ecological grass blanket provided by the invention is high in seed survival rate, good in uniformity, low in cost and capable of realizing sustainable ecological restoration.

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

The invention provides a frequency tripling circulator and electronic equipment, and the frequency tripling circulator comprises a grounding plate, a composite substrate located above the grounding plate, and an upper metal layer located on the composite substrate, the composite substrate comprises a ceramic substrate, and the surface of the ceramic substrate is provided with a through inner ferrite; the outer side of the inner ferrite is sequentially sleeved with a plurality of annular outer ferrites, and the saturation magnetization intensity of the inner ferrite and the saturation magnetization intensity of the outer ferrites are sequentially reduced from inside to outside; the upper metal layer comprises a central junction, the central junction is provided with three end points, each end point is connected with one port of the circulator through a metal transmission path, and the side edge of the central junction is provided with a plurality of SSPP grooves between two adjacent end points to form SSPPs branches. The scheme can have the characteristics of miniaturization and broadband, thereby satisfying more application scenes.

To provide: a method for depositing a single crystal SiC epitaxial growth film including a high quality epitaxial film having an epitaxial growth surface less in defects; a method for manufacturing a semiconductor device; a composite substrate; and a semiconductor device.SOLUTION: A method for depositing a single crystal SiC epitaxial growth film comprises: an introduction step of introducing reducing gas to put a bonded substrate including a polycrystal SiC substrate and a single crystal SiC film into a reducing gas atmosphere; and a film deposition step of depositing a single crystal SiC epitaxial growth film at a film deposition temperature held in the reducing gas atmosphere on the surface to be deposited of the single crystal SiC film of the bonded substrate. The film deposition temperature is less than 1500°C, and an etching amount obtained by etching the surface to be deposited of the single crystal SiC film with the reducing gas is 0.1 μm.SELECTED DRAWING: Figure 1

The invention provides a heterogeneous composite substrate and a manufacturing method thereof, and the manufacturing method comprises the steps: (1) carrying out the O ion implantation of a Si substrate, forming an O implantation layer, carrying out the C ion implantation, forming a C implantation layer on the O implantation layer, and obtaining a composite substrate precursor; (2) annealing and repairing the composite substrate precursor to convert the O injection layer into a SiO2 layer and convert the C injection layer into a SiC layer at the same time, and then performing post-processing to obtain a composite substrate; the composite substrate comprises a Si layer, a SiO2 layer and a SiC layer which are stacked in sequence; and (3) bonding the surface of one side, far away from the SiO2 layer, of the SiC layer in the composite substrate with the to-be-bonded surface of the SiC substrate to obtain the heterogeneous composite substrate. By adopting the method provided by the invention, the bonding strength of the heterogeneous composite substrate can be improved, and the quality of the heterogeneous composite substrate can be improved.

The invention discloses a door and window surface treatment intelligent regulation and control system and method based on multi-sensor fusion. According to the method, through multi-dimensional cooperation of the self-learning optimization center, breakthrough improvement of the process quality and essential optimization of the production efficiency are achieved. According to the system, the high-precision simulation capability of the digital twins and a dynamic decision-making mechanism of reinforcement learning are deeply fused, so that fine changes of material characteristics, environmental conditions and equipment states can be sensed in real time in the door and window surface treatment process, and optimal process parameters are automatically generated. The traditional hysteresis quality which depends on manual experience for adjustment is thoroughly eliminated, and when the system treats complex working conditions such as special-shaped curved surfaces and composite base materials, not only can the uniformity of the nanoscale coating be maintained, but also the energy supply strategy can be dynamically optimized, and the energy consumption and the material loss can be obviously reduced. The cross-process global optimization capability ensures that the links of pretreatment, spraying, curing and the like form cooperative gain instead of isolated operation, and the debugging period of the complex process is greatly shortened through the full-process intelligence.

The invention discloses a preparation process of a high-thermal-conductivity composite substrate, and the process comprises the steps: fixing a pre-prepared skeleton on an insulating base layer, and enabling branches of the skeleton and the surface of the insulating base layer to jointly define a plurality of heat dissipation spaces; dividing the plurality of heat dissipation spaces into at least one high heat dissipation space and at least one low heat dissipation space according to the layout and heating characteristics of a predetermined electronic component; a first heat-conducting filler is injected into the high-heat-dissipation space, a second heat-conducting filler is injected into the low-heat-dissipation space, curing treatment is conducted, the heat conductivity coefficient of the first heat-conducting filler is larger than that of the second heat-conducting filler, and the first heat-conducting filler and the second heat-conducting filler are combined with the framework to form a heat-conducting layer; a functional layer of the printed circuit board is fixed on the surface of the heat conduction layer, the area, corresponding to the high-heat-dissipation space, of the functional layer is used for installing high-heat-dissipation electronic elements, and the area, corresponding to the low-heat-dissipation space, of the functional layer is used for installing low-heat-dissipation electronic elements According to the technical scheme, different heat conduction measures can be adopted for different heating elements.

The invention relates to the technical field of circuit board preparation, and discloses a multilayer composite circuit board preparation method and a multilayer composite circuit board, and the method comprises the steps: mixing ceramic-based powder with nano metal particles, and carrying out sintering to form a heat-conducting microporous ceramic material with a continuous heat-conducting network and a microporous structure; a plurality of heat-conducting microporous ceramic materials are laminated and then pressed into a composite substrate through vacuum hot pressing, and through heat-conducting through holes are formed in the composite substrate; the composite substrates with the heat conduction through holes are stacked, a micropore layer used for heat conduction and shock absorption is arranged between every two adjacent composite substrates, and the stacked composite substrates and the micropore layers are subjected to vacuum hot pressing to form a multi-layer structure. According to the multi-layer composite circuit board preparation method and the multi-layer composite circuit board, through the continuous heat conduction network, the micropore structure and the micropore layer, the heat conduction performance is remarkably improved, thermal stress and mechanical stress are effectively released through the elastic characteristic of the micropore structure, and the overall stability of the multi-layer composite circuit board is enhanced.

The invention relates to the technical field of additive manufacturing, and discloses a detachable modular additive manufacturing substrate, an application method thereof and a target manufacturing device.The method comprises the steps that a plurality of additive manufacturing substrates are determined according to a first target demand, and the plurality of additive manufacturing substrates are spliced into a first composite substrate according to the first target demand; implementing an additive manufacturing process in a preset area of the first composite substrate to obtain a first manufactured part; according to the detachable characteristic of the additive manufacturing substrate, each first manufacturing part is split to obtain a plurality of separated first manufacturing parts, the separated first manufacturing parts are subjected to a non-additive manufacturing process to obtain a plurality of intermediate manufacturing parts, and the intermediate manufacturing parts are subjected to a non-additive manufacturing process to obtain a plurality of second manufacturing parts; on the basis of the splicing characteristic of the additive manufacturing substrates and a second target requirement, the multiple intermediate manufacturing parts are spliced, other additive manufacturing substrates are spliced on the intermediate manufacturing parts for leveling treatment, and second manufacturing parts are obtained; and performing an additive manufacturing process on the second manufactured part to obtain a target manufactured part.

The invention belongs to the technical field of folding screens, and discloses an optical conductive film for a folding screen and a preparation method thereof.The optical conductive film for the folding screen comprises a composite base material, an interface transition layer, a gradient refractive index optical adjustment layer, a hybrid conductive layer and a scratch-resistant wear-resistant layer which are sequentially stacked from bottom to top; the composite base material is a blending modification layer of polyimide and transparent polyamide, the hybrid conductive layer is formed by compounding silver nanowires, a graphene sheet layer and PEDOT: PSS according to a preset proportion, and the refractive index of the gradient refractive index optical adjustment layer is gradually reduced in the direction away from the composite base material. And the difference value between the refractive index of the gradient refractive index optical adjustment layer and the refractive index of the hybrid conductive layer is not greater than 0.05. The mechanical stability, the light transmission efficiency, the conductive stability, the scratch resistance and the wear resistance of the film are improved, the performance is stable after folding circulation, the use requirements of a folding screen are met, and application in different scenes can be met.

The invention belongs to the technical field of chemical vapor deposition of diamond films, and particularly relates to a high-temperature pulse bias assisted diamond single crystal heteroepitaxial growth method, which comprises the following steps: carrying out ultrasonic cleaning and etching pretreatment on an Ir / YSZ / Si composite substrate; self-assembling a polystyrene nanosphere template on the surface of the substrate; placing the substrate covered by the template in a low-power oxygen plasma etching machine for etching to form a regular nano pit array; putting the etched substrate into a microwave plasma chemical vapor deposition (MPCVD) reaction cavity, and applying-300V short pulse bias voltage to realize nucleation of high-density diamond crystal nuclei; after the bias voltage is closed, conventional diamond epitaxial growth continues to be carried out in the MPCVD cavity; after the growth is finished, the self-supporting diamond film is separated through chemical dissolution, a nano pit template is formed through pre-etching, and one-time-300V short pulse bias is combined, so that high-density and highly-uniform sp3 crystal nucleus nucleation can be realized on the surface of the substrate, and the distribution consistency and nucleation efficiency of diamond crystal nucleation are improved.

The invention discloses a high-solid-content MIL-101 (Fe) / PIM-1 mixed matrix membrane and a preparation method thereof, and belongs to the technical field of gas separation membranes. The preparation method comprises the following steps: firstly, dissolving an iron source in a PIM-1 polymer solution to form a homogeneous membrane casting solution; forming the obtained membrane casting solution, and removing the solvent to obtain a PIM-1 / Fe (II) composite substrate containing Fe (III); then, the substrate is alternately immersed in a terephthalic acid methanol solution and a ferric salt methanol solution, and MIL-101 (Fe) is generated in the polymer matrix through in-situ limited crystallization by layer-by-layer limited crystallization. According to the method, the problem of interfacial compatibility between the MOF filler and the polymer matrix is effectively solved, and high loading capacity (up to 52.9 wt.%) of MIL-101 (Fe) is realized without agglomeration. Meanwhile, the membrane has excellent COplasticizing resistance and long-term operation stability, and has a wide application prospect in the fields of carbon capture and the like.

The invention belongs to the field of semiconductor processing and manufacturing, and provides a temporary bonding and de-bonding method, a composite substrate preparation method and a wafer manufacturing method.The temporary bonding and de-bonding method comprises the steps that silicon oxide layers are formed on two silicon substrates; the silicon oxide layer is subjected to ion implantation, hydrofluoric acid treatment and plasma activation, temporary bonding of the two silicon substrates is realized through hydrophilic bonding, and a temporary bonding interface is cracked through de-bonding annealing, so that de-bonding is realized. According to the method, a bonding medium does not need to be used, the thermal properties of the two substrates can be kept consistent, and warping and breaking are effectively avoided; temporary bonding is high in strength and good in stability, the functional substrate can be greatly thinned through the method, and therefore the composite substrate is prepared or the method is further used for manufacturing a multi-layer wafer bonding structure.

The invention discloses a method for preparing a silicon carbide-diamond composite substrate, and belongs to the field of semiconductor materials. The method for preparing the silicon carbide-diamond composite substrate comprises the following steps: preparation before growth; growing an interface layer; and growing a polycrystalline diamond layer to obtain the silicon carbide-diamond composite substrate. By limiting the preparation process and parameters, in the process of preparing the silicon carbide-diamond composite substrate, an interface layer with small and uniform crystal grains is firstly grown and formed, and the interface layer is better in growth adaptability with a carbon surface of the silicon carbide substrate, so that uniform transition between the silicon carbide substrate and a polycrystalline diamond layer is favorably realized; and the high-quality silicon carbide-diamond composite substrate is obtained.

The invention discloses a silicon carbide-diamond composite substrate and application, and belongs to the field of semiconductor materials. The silicon carbide-diamond composite substrate is characterized by sequentially comprising a silicon carbide substrate layer, an interface layer and a polycrystalline diamond layer from bottom to top, the thermal conductivity of the silicon carbide-diamond composite substrate is greater than or equal to 650 (W / (m.K)); the light transmittance is greater than or equal to 26%; the diameter is not less than 1 inch. According to the silicon carbide-diamond composite substrate, the interface layers are arranged in the silicon carbide substrate layer and the polycrystalline diamond layer, on one hand, the interface thermal resistance between the layers can be reduced, and the overall thermal conductivity of the composite substrate can be improved; on the other hand, the difference between the silicon carbide substrate layer and the polycrystalline diamond layer is reduced, delamination of the silicon carbide substrate layer and the polycrystalline diamond layer is avoided, and the composite substrate with complete crystal morphology is obtained.

The invention provides a high-strength antibacterial implant material and a preparation method thereof. The implant material comprises a composite matrix, a graphene-titanium nitride composite coating and a tantalum-silver composite coating, wherein the graphene-titanium nitride composite coating and the tantalum-silver composite coating are sequentially arranged on the surface of the composite matrix from inside to outside; wherein the graphene-titanium nitride composite coating is of a multi-layer alternating structure formed by alternately stacking graphene layers and titanium nitride layers; the tantalum content and the silver content in the tantalum-silver composite coating are in opposite gradient changes. The mechanical strength and the antibacterial property of the implant material are remarkably improved through the multi-layer alternate structure design, the hardness and the biocompatibility of the material are enhanced through the graphene-titanium nitride composite coating, and the implant material is endowed with the antibacterial property and the corrosion resistance through the tantalum-silver composite coating; the implant material has long-acting antibacterial property and biological safety while keeping high strength, so that the implant material is widely applied to the medical implant fields of orthopedics, dentistry and the like.

A touchpad and palm rest base chassis assembly for an information handling system may comprise a base chassis for enclosing the information handling system including a keyboard opening, and a plurality of palm rest support surfaces, and a composite substrate of woven glass fiber impregnated with polycarbonate material forming a touchpad surface, through which haptic feedback may be provided and touch may be sensed by capacitive sensors including a printed circuit board assembly (PCBA) operatively connected to the composite substrate having a light emitting diode (LED) disposed within an etched opening on the underside of the composite substrate formed to guide LED light into the light transmissive composite substrate of the touchpad surface to illuminate an icon opening within an inked surface of the composite substrate to negate need of a separate light guide layer, and the touchpad and palm rest base chassis assembly affixed to the base chassis.

A composite substrate includes a piezoelectric layer and a low-acoustic-velocity film. The low-acoustic-velocity film extends along a bottom surface of the piezoelectric layer and has a lower acoustic velocity than the piezoelectric layer. An inverse velocity plane of an acoustic wave propagating through the piezoelectric layer is concave.

The invention relates to the technical field of semiconductor material processing, in particular to a preparation method of a piezoelectric composite substrate, which comprises the following steps: preparing two piezoelectric substrates and a support substrate; wherein one piezoelectric substrate is used as a donor substrate, and the other piezoelectric substrate is used as an auxiliary substrate; ion implantation is carried out in the donor substrate, a weakening layer is formed in the donor substrate, and the donor material layer side of the donor substrate and the auxiliary substrate are temporarily bonded through the connecting layer to form a first bonding body; stress is applied to the weakening layer, so that the weakening layer is broken, and a first composite substrate and a residual donor substrate are formed; bonding the donor material layer side of the first composite substrate with the support substrate to form a second bonding body; and corroding to remove a connecting layer of a temporary bonding interface of the donor material layer and the auxiliary substrate in the second bonding body, so that the auxiliary substrate is separated from the second bonding body, and the piezoelectric composite substrate is formed. According to the method, the piezoelectric substrate does not need to be greatly thinned, the single piezoelectric substrate can be reused, and the production cost is reduced.

The embodiment of the invention provides a composite substrate and a preparation method of the composite substrate, relates to the technical field of semiconductor devices, and is used for solving the technical problem of relatively high bonding interface resistance of a composite substrate formed by bonding a 3C-SiC substrate and a 4H-SiC substrate in related technologies. The composite substrate comprises a 3C-SiC layer and a 4H-SiC layer, the 4H-SiC layer comprises a first surface, and the 3C-SiC layer comprises a second surface; the first surface and / or the second surface comprises a high-concentration doped layer with N-type conductivity, and a bonding interface of the 3C-SiC layer and the 4H-SiC layer is a contact surface between the high-concentration doped layer and the second surface, between the high-concentration doped layer and the first surface or between the high-concentration doped layer and the two high-concentration doped layers. The interface energy band is adjusted through the energy band bending effect of the high-concentration doping layer, the barrier width and height of the bonding interface are reduced, electrons penetrate through the barrier through a tunneling mechanism, the migration efficiency of the electrons on the heterojunction interface is improved, and the interface resistance is reduced.

The invention provides a preparation method of a composite substrate for semiconductor device production, which comprises the following steps: putting raw material carbon into a reaction chamber in a hydrogen atmosphere, vacuumizing the reaction chamber, heating to 1000-1500 DEG C, such as 1000 DEG C, 1200 DEG C and 1500 DEG C, preserving heat for 1-3 hours, cooling and cleaning to obtain a carbon substrate; grinding and mixing a tantalum source, a tantalum fluoride and a fluxing agent to obtain coating powder; transferring the coating powder into a reaction chamber with a pulsed electric field, carrying out pulsed electric field assisted vapor deposition, and cooling to obtain a tantalum carbide pre-coating material with directionally arranged crystal orientations; and transferring the tantalum carbide pre-coating material into a high-temperature sintering furnace, and heating the tantalum carbide pre-coating material in an inert atmosphere at 1800-2400 DEG C for 0.5-6 hours to obtain the composite substrate which is used for producing a semiconductor device. Through directional arrangement of crystal orientations, the tantalum carbide coating achieves higher electrical conductivity and thermal conductivity.

The invention discloses a Guangxi strigose hydrangea juvenile tea gall mite comprehensive control method based on ecological regulation and control, and belongs to the technical field of ecological planting of strigose hydrangea juvenile tea. The method comprises the steps that lemongrass is planted on the periphery to form a smell barrier, purple perilla is arranged in the middle, Guangxi strigose hydrangea juvenile tea and sugar oranges are planted at intervals in a core area, and a composite rhombic layout is formed; chinaroot greenbrier is planted in the interplanting zone at intervals to serve as gall mite trapping plants, and matrine or azadirachtin botanical pesticide is sprayed to the chinaroot greenbrier regularly; a composite substrate containing 60-65% of loess, 20-25% of bagasse biochar, 10-12% of vermiculite and 3-5% of sodium alginate-attapulgite clay composite water-retention slow-release particles is adopted to form a water-retention breathable layer with a slow-release function; and spreading wormwood seeds around the host plants to inhibit survival of overwintering adults of the gall mites. The method has good ecological benefits and insect pest prevention and control efficiency, effectively improves the soil microenvironment and is suitable for sweet tea planting in subtropical hilly areas such as Guangxi.

The invention provides a modified silicon-based negative electrode material as well as a preparation method and application thereof, and relates to the technical field of new energy battery negative electrodes. The preparation method provided by the invention comprises the following steps: dipping a boron-silicon substrate in a pre-lithium solution, evaporating a solvent to dryness, and calcining to obtain a modified substrate; growing silicon nitride nanowires on the surface of the modified matrix in situ to prepare a composite matrix; and reducing the composite matrix in a reducing atmosphere, and coating the surface with mesoporous carbon to prepare the modified silicon-based negative electrode material. The structure stability of the negative electrode material in the charging and discharging process can be effectively improved, the cycle performance reduction caused by the pulverization of the negative electrode material is avoided, and meanwhile, the first effect can be improved by performing pre-lithiation on the boron-silicon substrate.

This application relates to a silicon-carbon composite material. The silicon-carbon composite material includes a carbon nanotube-and-porous carbon composite substrate and a silicon-based material. The porous carbon is connected to the carbon nanotube by a connecting unit in the carbon nanotube-and-porous carbon composite substrate. The high conductivity and strong mechanical properties of the carbon nanotubes can improve the overall conductivity, compression resistance, and expansion resistance of the silicon-carbon composite material, thereby improving cycle performance, electrode plate cycle expansion resistance, and rate performance of a secondary battery.

The invention discloses a composite circuit substrate material parameter pixel gray scale coding method and device and a storage medium, and relates to the technical field of composite substrate material physical property modeling simulation. According to the method, the composite circuit substrate unit image is pixelated, the pixel gray value is used as a matrix material parameter coding space, and then matrix material parameter information is embedded into the substrate unit image, so that fusion coding of wiring pattern features and material mechanical parameters is realized when two or more materials exist in the same layer of substrate; and the accuracy of predicting the equivalent mechanical parameters of the substrate unit through the wiring image information of the substrate unit and the deep convolutional neural network is improved.

The invention discloses a biodegradable flexible conductive high-hydrophobicity sensor substrate and a preparation method and application thereof.The preparation method comprises the steps that a polylactic acid electrostatic spinning solution and a chitosan / polyethylene oxide mixed electrostatic spinning solution are prepared on the basis of a safe and non-toxic food-grade material; the preparation method comprises the following steps: sequentially spinning by adopting an electrostatic spinning technology to form a sandwich structure flexible substrate, transferring a carbon nano tube conductive film, and tightly attaching the carbon nano tube conductive film to the surface of a polylactic acid layer of the sandwich structure substrate, thereby finally obtaining the flexible conductive high-hydrophobicity composite substrate. According to the invention, a hydrophobic-hydrophilic-hydrophobic sandwich structure is constructed through multi-layer electrostatic spinning, and a surface carbon nanotube conductive layer is cooperated, so that the substrate has high hydrophobicity, excellent conductivity and flexible tensile property. The preparation method has the characteristics of controllable process, low cost and environmental friendliness, and the obtained substrate is expected to have wide application prospects in the fields of food packaging, sensor substrates, intelligent wearing, health monitoring and the like.

The present application provides an LED chip based on an alumina-silica composite substrate and a fabrication method thereof. The LED chip comprises an alumina-silica composite PSS substrate, a composite buffer layer and an LED structural layer, wherein the composite buffer layer is epitaxially grown on the alumina-silica composite PSS substrate, and the LED structural layer is epitaxially grown on the composite buffer layer. The composite buffer layer comprises: an aluminium oxynitride / aluminium nitride layer and a silicon oxynitride layer, wherein the alumina in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride / aluminium nitride layer, and the silica in the alumina-silica composite PSS substrate is covered with the aluminium oxynitride / aluminium nitride layer and the silicon oxynitride layer in a staggered manner.

The invention discloses an integrally compression-molded hard top tent shell for a vehicle, which comprises a hard shell main body, the hard shell main body comprises a PHC composite substrate and a protective shell arranged outside the PHC composite substrate, and the PHC composite substrate comprises a surface glass fiber layer, a bottom glass fiber layer and a honeycomb core material arranged between the surface glass fiber layer and the bottom glass fiber layer. The invention further discloses a manufacturing process which comprises the following steps: S1, slitting the glass fiber raw material; s2, taking the unfolded honeycomb core material; s3, conveying to a spraying room for spraying a polyurethane material; s4, the prefabricated protective shell, the prefabricated first metal embedded part and the prefabricated second metal embedded part are filled; s5, performing hot-pressing shaping; s6, the blocked holes are cleaned; s7, cutting off slitter edges of the formed edges and polishing the formed edges; and S8, packaging and warehousing after visual inspection is qualified. The hard-top tent shell is integrally formed, the number of assembly parts is small, and assembly is convenient and fast; the technology is high in specificity, the manufactured hard-top tent shell can be directly used for later assembly, the overall function is complete, and practicability is high.

The invention provides an integration method of a metal substrate and a ceramic substrate, a substrate structure and a composite substrate. The integration method of the metal and the ceramic substrate comprises the following specific steps: carrying out surface treatment on a ceramic substrate raw material and cutting the ceramic substrate raw material into an initial ceramic substrate according to a preset specification; performing surface treatment on a metal sheet raw material and cutting the metal sheet raw material into initial metal sheets according to the preset specification; the N initial ceramic substrates and the N + 1 initial metal sheets are sequentially overlaid and pressed in an alternate and spaced mode, and a combination of the ceramic substrates and the metal sheets is obtained; sintering the combined body to form a first MCMI substrate; the first MCMI substrate is flattened, and a pretreated MCMI substrate is obtained; carrying out surface metallization treatment on the pretreated MCMI substrate to obtain a final MCMI substrate; wherein N is an integer greater than 0. When the MCMI substrate, namely the multilayer ceramic metal integrated substrate, is applied to a packaging structure, the number of interface layers between dissimilar materials in the packaging structure can be reduced, and the heat dissipation effect is improved.