38results about How to "High carrier mobility" patented technology

The invention discloses a lithium iron phosphate positive electrode material and a preparation method and application thereof, and belongs to the technical field of lithium iron phosphate positive electrode materials. The lithium iron phosphate positive electrode material comprises a lithium iron phosphate matrix and a carbon coating layer coating the surface of the lithium iron phosphate matrix, the average standard deviation of the thickness of a carbon coating layer in the lithium iron phosphate positive electrode material is # imgabs0 #, and sigma (d) is more than or equal to 0.05 nm and less than or equal to 0.35 nm; the average standard deviation of the carbon content in the lithium iron phosphate positive electrode material is sigma (Cwt%), and sigma (Cwt%) is larger than or equal to 0.02 wt% and smaller than or equal to 0.35 wt%. The lithium iron phosphate positive electrode material has a uniform carbon coating layer, and the thickness of the carbon coating layer and the carbon content at each position are relatively consistent, so that the improvement of the carrier mobility of the lithium iron phosphate positive electrode material is facilitated, and the further improvement of the electrochemical performance of a battery prepared from the lithium iron phosphate positive electrode material is facilitated.

The invention belongs to the technical field of semiconductor devices, and discloses a diamond-based CMOS (complementary metal oxide semiconductor) inverter and a preparation method thereof. The diamond-based CMOS inverter comprises a diamond substrate, a monocrystalline diamond film, a hydrogen terminal region, a mesa isolation region, an n-type oxide semiconductor layer, a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a first gate dielectric layer, a first gate electrode, a second gate dielectric layer and a second gate electrode. The first drain electrode and the second drain electrode are in metal interconnection; the first gate electrode and the second gate electrode are metal-interconnected. The diamond-based CMOS phase inverter is prepared by combining the p-type hydrogen terminal diamond and the n-type oxide semiconductor, so that the technical problem that an n-type MOS device is difficult to realize by the diamond at present is effectively avoided, respective advantages of the diamond and the n-type oxide semiconductor are fully exerted, and the high-performance diamond-based monolithic integrated CMOS phase inverter is realized.

The invention discloses a two-dimensional organic-inorganic hybrid perovskite and molybdenum diselenide heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a substrate; the electrode layer is positioned on one side of the substrate; the photoelectric conversion part is arranged on the side, away from the substrate, of the electrode layer, and materials of the photoelectric conversion part comprise two-dimensional organic and inorganic hybrid perovskite (C6H13NH3) 2PbI4 (C6PI), molybdenum diselenide (MoSe2) and a protective layer hexagonal boron nitride (h-BN). According to the invention, by constructing the heterostructure, the advantages of high absorption coefficient and extremely low dark current of the two-dimensional perovskite material and the advantages of high carrier mobility and wide light response range of the two-dimensional transition metal disulfide are combined, so that the performance of the photoelectric detector is improved to a great extent; the method has good performance in the aspects of light response rate, response time, response range and the like.

The invention discloses a thin film and a preparation method thereof, a photoelectric device and a display device. The preparation method of the thin film comprises the steps that a first film layer is provided, and the first film layer comprises oxide particles; performing atmosphere treatment on the first film layer to obtain a thin film; wherein gas used in the atmosphere treatment comprises hydrogen sulfide gas, the volume fraction of the hydrogen sulfide gas is smaller than or equal to 10%, and through the atmosphere treatment of the low-concentration hydrogen sulfide gas, defects in the oxide particles in the first film layer can be passivated, and the vulcanization degree can be accurately regulated and controlled; therefore, the material stability and the performance stability of the thin film can be improved, and meanwhile, the thin film can have relatively good carrier mobility.

The invention provides a perovskite laminated cell and a preparation method thereof. The perovskite laminated cell comprises a bottom cell, a tunneling composite layer and a perovskite top cell which are sequentially laminated, the tunneling composite layer comprises a first TCO layer and a second TCO layer which are stacked in sequence; the first TCO layer contains a hydrogen element; the surface of the second TCO layer is provided with hydroxyl groups; the perovskite top cell comprises a first charge transport layer, a perovskite light absorption layer, a second charge transport layer and an electrode which are stacked. The first charge transport layer is connected with the second TCO layer, the first charge transport layer is provided with a passivation group, and the passivation group and a hydroxyl group on the surface of the second TCO layer form a covalent bond. According to the invention, under the synergistic effect of the first TCO layer and the second TCO layer, efficient tunneling recombination can be realized, and the stability and efficiency of a cell device are greatly improved.

The embodiment of the present disclosure relates to the semiconductor field, and provides a semiconductor structure and a manufacturing method thereof, the method comprising: providing a semiconductor substrate, the semiconductor substrate being provided with a plurality of first bit lines extending along a first direction; forming a first transistor array on the semiconductor substrate, the first transistor array comprising a plurality of first semiconductor columns; forming first word lines, each first semiconductor column being connected with a corresponding first word line and a first bit line; forming a second transistor array on the first transistor array, the second transistor array comprising a plurality of second semiconductor columns, the first semiconductor columns and the second semiconductor columns corresponding to each other; and forming second word lines and second bit lines, each second semiconductor column being connected with a corresponding second word line and a second bit line, so as to form a 2T0C semiconductor structure, and the capacitor process in the manufacturing process of the semiconductor structure can be simplified.

The invention relates to the technical field of electro-optical modulators, in particular to a graphene indium tin oxide P-N heterojunction electro-optical modulator and a preparation method thereof, and the graphene indium tin oxide P-N heterojunction electro-optical modulator comprises an electrode, a graphene layer, an ITO layer, an Al2O3 spacing layer, a silicon waveguide layer, a light input port and a light output port; the graphene layer of the electro-optical modulator has extremely high carrier mobility, the ITO layer also has good electrical performance, and the heterojunction formed by the graphene layer and the ITO layer can quickly respond to the change of an electric field, so that high-speed electro-optical modulation is realized, and the extinction ratio can be effectively improved by optimizing the structure and electrical parameters of the graphene-ITO heterojunction. For example, the appropriate number of graphene layers and the appropriate thickness of the ITO layer can enable the contrast ratio of optical signals in the 0 state and the 1 state to be remarkably increased, due to the synergistic effect of the optical performance and the electrical performance of the graphene layers and the ITO layer, the energy loss of the optical signals is small when the optical signals pass through the modulator, and the insertion loss is reduced.

The application discloses a kind of transparent conductive heating material and preparation method thereof, belong to conductive heating material technical field, can solve the problems of high surface resistance, low light transmittance, poor temperature uniformity and short service life of existing conductive heating material.The preparation method comprises the following steps: S1, pretreatment is carried out to the substrate to obtain the treated substrate;S2, depositing buffer target material on the treated substrate to form a stress buffer layer;S3, depositing conductive heating target material on the stress buffer layer to form a conductive heating layer; the conductive heating target material is zirconium-doped indium oxide;S4, preparing an electrode layer on the conductive heating layer.The application is used for the preparation of transparent semiconductor heating material.

This invention discloses a class of porphyrin-based A-D-A type polymer photovoltaic materials, their preparation methods, and applications. The invention utilizes a porphyrin-DPP system constructed through Sonogashira coupling, placing the donor unit at the center of the A-D-A structure. This A-D-A structure more effectively enhances the intramolecular push-pull electronic effect, promoting intramolecular charge transfer and thus significantly broadening and redshifting the light absorption range of the polymer. Furthermore, the A-D-A structure facilitates more ordered and compact intermolecular stacking, promoting the expansion of π-π conjugation and potentially increasing the carrier mobility of the material. This lays the material foundation for obtaining higher short-circuit current densities and fill factors in devices.

The invention provides a perovskite solar cell and a preparation method thereof. The method comprises the following steps: preparing a first carrier transport layer on the surface of one side of a conductive surface of a transparent conductive substrate; performing laser treatment on the surface of one side, far away from the transparent conductive substrate, of the first carrier transport layer by adopting a surface laser source to obtain a modified first carrier transport layer; the projection area of the surface laser source is 1-10000 mm < 2 >; the first carrier transport layer is a hole transport layer or an electron transport layer; and sequentially preparing a perovskite active layer, a second carrier transport layer and a metal electrode layer on the surface of one side, far away from the transparent conductive substrate, of the modified first carrier transport layer to obtain the perovskite solar cell. The first carrier transport layer is subjected to laser processing, the surface structure of the first carrier transport layer can be improved, and the modified first carrier transport layer is obtained, so that the energy level matching and the carrier mobility between the modified first carrier transport layer and the perovskite active layer are improved, and the photoelectric conversion efficiency of the perovskite solar cell is further improved.

The invention belongs to the technical field of photoelectric materials and application, and discloses a main chain conjugated intrinsic stretchable thermal delay fluorescent elastomer as well as a preparation method and application thereof. The elastomer is prepared through free radical polymerization by taking a high-efficiency luminous TADF conjugated unit as a main chain and acrylic ester as a flexible side chain. The innovation of the invention lies in that a flexible acrylate side chain is introduced into a rigid efficient electroluminescent TADF conjugated main chain for the first time in a chemical cross-linking manner to form a rod-like bottle brush structure, so that the elastomer has good photoelectric characteristics on the basis of improving the intrinsic tensile property of the elastomer; the structure is novel, the design strategy is unique, and meanwhile the problems that a traditional conjugated luminescent material is not intrinsic in stretchability and a traditional elastomer does not have the high-performance photoelectric characteristic are solved; the elastomer is used as a luminescent layer material to prepare an organic photoelectric device with high stability, high stretchability and high efficiency.

The application belongs to the field of organic-inorganic heterostructure thin films, and relates to a polymer / inorganic heterostructure composite thin film and a preparation method and application thereof. The composite thin film is formed by compounding PEDOT:PSS and ITO nanocrystals, PEDOT:PSS forms a flexible network skeleton, the growth orientation of ITO nanocrystals is a (222) crystal face, a (400) crystal face or a (211) crystal face, and the ITO nanocrystals are uniformly dispersed and bonded in the PEDOT:PSS network. The flexible organic polymer PEDOT:PSS and the brittle ceramic material ITO are compounded, the surface state and the work function of the two-phase materials are regulated, the heterostructure composite thin film with a molecular-level interface combination is constructed, and the critical mechanical properties, the interface toughness and the electron mobility of the thin film are simultaneously improved, so that the demand of the flexible electronic device for the high-performance and high-reliability thin film material is met.

The invention relates to the technical field of functional fabrics, in particular to a high-performance light-absorption heat-storage warm-keeping fabric and a preparation method thereof.The high-performance light-absorption heat-storage warm-keeping fabric comprises a base cloth fabric and light-absorption heat-storage slurry coating the surface of the base cloth fabric, and the light-absorption heat-storage slurry is prepared from, by weight, 40-70 parts of a light-absorption heat-storage material, 20-50 parts of waterborne polyurethane, 0.1-0.5 part of a thickening agent and 0.5-2 parts of a dispersing agent; the light absorption and heat storage material is a graphene oxide aqueous phase dispersion liquid, the base cloth fabric is a graphene polyester fabric, and through optimization of the components of the material, the fabric has good light absorption, heat storage and warm keeping effects.

The invention provides an organic compound, an organic electroluminescent material and application thereof, the organic compound has a structure as shown in a formula IA or a formula IB, through the design of a molecular structure, the organic compound has a specific spatial configuration, the overall plane conjugacy of the molecular structure is better, electrons and holes can be effectively transmitted and injected, and the organic electroluminescent material can be applied to the field of organic electroluminescent devices. And excellent carrier mobility and photoelectric properties are shown. The organic compound is used for the organic electroluminescent device, is especially suitable for being used as a main body material, has excellent carrier transmission performance, is beneficial to exciton energy transmission between the main body material and a dye, and can effectively improve the luminous efficiency of the device, reduce the driving voltage and prolong the service life, so that the device has better comprehensive performance; and the requirements of the current panel and display manufacturing industry on high-performance organic materials are met.

This invention discloses a perovskite solar cell and its fabrication method. The method includes: spin-coating a mixed solution of lead iodide and HIAM-4024 or HIAM-4025 onto the surface of an electron transport layer, followed by annealing to obtain a lead iodide layer; and spin-coating an organic halide solution onto the surface of the lead iodide layer, followed by annealing to obtain a perovskite layer. This invention introduces HIAM-4024 or HIAM-4025 into the lead iodide layer, allowing high-energy photons to be filtered through HIAM-4024 or HIAM-4025. Through down-conversion, it emits photons in the visible light range, which are further utilized by the underlying perovskite absorber, thereby improving the light energy utilization of the perovskite solar cell. Furthermore, both HIAM-4024 and HIAM-4025 can effectively filter ultraviolet radiation that could damage the device, further enhancing the light energy utilization of the perovskite device.

The application provides a transistor structure and a preparation method thereof, relates to the technical field of semiconductors, and aims to improve the on performance of a transistor. The transistor structure comprises a substrate and a shallow trench isolation structure. The substrate comprises a containing groove, a first active region and a second active region. The containing groove is located on opposite sides of the first active region and the second active region. The opposite sides of the first active region comprise a step structure. The shallow trench isolation structure is at least partially arranged in the containing groove and is at least located on the opposite sides of the first active region and the opposite sides of the second active region. One side of the shallow trench isolation structure close to the first active region has a recess, and the recess exposes the step structure of the first active region. One side of the shallow trench isolation structure close to the second active region has a protrusion. The transistor structure is applied to a chip.

The invention belongs to the field of synthesis of fine chemical intermediates, and discloses a multi-site substituted bromopyrene intermediate and a derivative, a preparation method and application thereof. The molecular structural formula of the bromopyrene intermediate is # imgabs0 #, wherein X1, X2 and X3 are bromine atoms or H; and X1, X2 and X3 are not H at the same time. R1 is an alkane having 1 to 90 carbon atoms, a heterocyclic alkane having 1 to 90 carbon atoms, a substituted aromatic hydrocarbon having 5 to 90 carbon atoms, an aryloxy group having 5 to 90 carbon atoms, an aromatic amine having 5 to 90 carbon atoms, a boron aromatic hydrocarbon having 5 to 90 carbon atoms, or an aromatic heterocyclic group having 5 to 90 carbon atoms. The prepared pyrenyl luminescent material can effectively improve the solubility of target molecules, and is applied to the fields of organic luminescent devices, organic photovoltaic devices, perovskite solar devices, fluorescent falsification prevention, thermal response stimuli response, biological imaging and the like.

The invention provides a terahertz photoconductive antenna and a manufacturing method thereof. A germanium-carbon functional layer and a first bonding layer are sequentially formed on a semiconductor substrate, a diamond substrate is provided, a second bonding layer is formed on the diamond substrate, the semiconductor substrate is turned to enable the first bonding layer to face the second bonding layer, and the semiconductor substrate and the diamond substrate are bonded. The semiconductor substrate is removed, an electrode is formed on the germanium-carbon functional layer, and therefore manufacturing of the terahertz photoconductive antenna is achieved, the substrate of the formed terahertz photoconductive antenna is the diamond substrate, the overall temperature of a terahertz device is effectively reduced, the thermal breakdown risk of the terahertz device is reduced, and the reliability of the terahertz device is improved. In addition, due to the germanium-carbon functional layer, the terahertz device has the advantages of higher carrier mobility, wider band gap, better heat conductivity, higher radiation resistance and the like, the germanium-carbon functional layer is initially formed on the semiconductor substrate and then transferred to the diamond substrate, the germanium-carbon functional layer has large size and extremely high film forming quality, and the performance of the terahertz device is improved.

The invention relates to a display panel, a manufacturing method thereof and a display device. The display panel includes: a substrate; the plurality of thin film transistors are arranged on one side of the substrate, and each thin film transistor comprises a semiconductor part, a gate insulating layer, a first gate, a second gate, a source and a drain; wherein the semiconductor part and the gate insulation layer are stacked in the direction perpendicular to the plane where the substrate is located, the first gate and the second gate are spaced and arranged on the side, away from the semiconductor part, of the gate insulation layer on the same layer, and the source and the drain are electrically connected with the semiconductor part. The display panel can solve the problems of high switching voltage, low switching speed and low stability of the thin film transistor of the display panel in the prior art.

The embodiment of the present disclosure relates to the field of semiconductor, and provides a semiconductor structure and a manufacturing method thereof, the semiconductor structure comprising: a substrate; a first oxide semiconductor layer perpendicular to a surface of the substrate, comprising a first channel region and first source-drain doped regions located on opposite sides of the first channel region along an extension direction of the first oxide semiconductor layer; first gates located on at least opposite sides of the first oxide semiconductor layer along any direction parallel to the surface of the substrate, the first gates located on opposite sides of the first oxide semiconductor layer being gate regions, and the first gates further comprising a connecting region connecting the gate regions; and first source-drain electrodes comprising first source electrodes and first drain electrodes located on opposite sides of the first oxide semiconductor layer, the first source-drain electrodes being in contact with the first source-drain doped regions; wherein the first oxide semiconductor layer, the first gates and the first source-drain electrodes constitute a first transistor. At least the performance of the semiconductor structure can be improved while reducing the size of the semiconductor structure.

The application relates to a linear negative temperature coefficient thermistor material. The material takes graphene oxide and a manganese-cobalt-nickel system transition metal oxide as a base material, is doped with urea, melamine, dicyandiamide, thiourea, boric acid or sodium borohydride, and is obtained by hydrothermal synthesis to have the linear negative temperature coefficient thermistor material. The material has obvious NTC performance, and the resistance value thereof changes with temperature in a linear manner. The preparation steps are simple, the process is safe, the cost is low, the performance is stable, and the material is easy to popularize in the industrial field. The material overcomes the process of realizing the compensation of electrical parameters from nonlinearity to linearity by complicated design of a circuit part in the application process of an existing nonlinear thermistor device, and has a larger TCR value compared to a linear negative temperature coefficient thermistor material obtained by only doping modification, and has a good application prospect in the temperature sensing field.

This invention discloses a method for manufacturing a semiconductor device, relating to the field of semiconductor technology, for simultaneously improving the carrier mobility of NMOS and PMOS transistors, both of which have a gate-around-the-loop (GOP) transistor structure. The manufacturing method includes: forming a first GOP transistor on a first well region of a substrate, and forming a second GOP transistor on a second well region of the substrate. The crystal orientation of a first channel region of the first GOP transistor is perpendicular to the crystal orientation of a second channel region of the second GOP transistor. Forming the first GOP transistor on the first well region includes: forming a first stacked structure on the first well region. The first stacked structure includes a pre-formed layer and alternating first and second material layers formed on the pre-formed layer. The second material layer is the topmost layer in the first stacked structure. Each first material layer is laterally thinned so that the width of the remaining portion of each first material layer is equal to the width of the first channel region.

A semiconductor structure and a method for forming the same, wherein the structure comprises: a substrate, wherein the substrate has a doped drift region and a doped body region, and the conductivity type of the drift region is opposite to that of the body region; a gate structure located on the substrate, wherein part of the gate structure is located on the drift region, and part of the gate structure is located on the body region; a barrier layer located on the surface of part of the drift region adjacent to the gate structure; a doped layer located in the substrate or in the barrier layer, wherein the doped layer is located at the interface where the barrier layer and the drift region are in contact, and wherein the doped layer has repair ions. The repair ions can combine with the dangling bonds in the barrier layer, which is beneficial to improving the high voltage resistance of the formed semiconductor structure.

This application provides a transistor, a display panel, and a display device. The transistor includes a source / drain electrode and an active portion. The active portion includes a first semiconductor layer and a second semiconductor layer stacked together. The second semiconductor layer is located on the side of the first semiconductor layer away from the source / drain electrode film. The first semiconductor layer includes a first crystalline oxide, and the second semiconductor layer includes a second crystalline oxide. The crystallinity of the first crystalline oxide is c1, and the crystallinity of the second crystalline oxide is c2, where 0 < c1 - c2 ≤ 30%. This design implies a small difference in crystallinity between the first and second semiconductor layers, which helps to enhance the induced growth effect of the crystalline oxide in the second semiconductor layer on the crystalline oxide in the first semiconductor layer. This further improves the overall stability of the active portion, thereby enabling the transistor to possess both high carrier mobility and high stability.

This application discloses a thin film, its preparation method, and an optoelectronic device. The thin film is made of noble metal particles and transition metal oxide nanomaterials. The thin film has pores, and the noble metal particles are at least partially located in the pores. The thin film of this application exhibits high carrier mobility.

The present invention relates to an organic electroluminescent compound, a light-emitting device and a consumer product. By including the organic electroluminescent compound according to the present disclosure, an organic electroluminescent device having improved driving voltage and / or current efficiency characteristics can be provided.

The invention provides a growth method of a metal halide single crystal film, which comprises the following steps of: firstly, depositing a layer of blended polymer film with an orthogonal dissolution characteristic on the surface of a metal halide single crystal substrate as a sacrificial layer, and performing solvent treatment to form a self-patterning soft template; and then coating the polymer layer with a precursor solution of a target epitaxy, carrying out nucleation, transverse growth and grain combination to form a uniform and compact single crystal thin film, and completing mechanical stripping and transfer of the epitaxial thin film through a thermal stripping adhesive tape. The growth method provided by the invention has excellent universality, can grow various metal halide single crystal films including lead-based, non-lead-based, alloy and superlattice structures, and has wide adjustability in size and thickness; in addition, the prepared thin film shows high carrier mobility and low trap density which are equivalent to those of blocky single crystals.

Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a source doped region, a drain doped region, and a lightly doped region and an intrinsic region that are arranged adjacent to each other and located between the source doped region and the drain doped region. The lightly doped region is adjacent to the source doped region, and the intrinsic region is adjacent to the drain doped region. A doping concentration of the source doped region and the drain doped region is greater than a doping concentration of the lightly doped region.

This invention discloses an IBC / HBC battery based on a high hole mobility material and its fabrication method. The IBC / HBC battery includes: a crystalline silicon substrate having a front and a back side; a first passivation layer on the front side of the crystalline silicon substrate; an antireflection layer on the surface of the first passivation layer away from the crystalline silicon substrate; a second passivation layer on the back side of the crystalline silicon substrate; a hole transport layer including multiple sub-hole transport layers; and an electron transport layer including multiple sub-electron transport layers, the sub-hole transport layers being spaced apart on the surface of the second passivation layer away from the crystalline silicon substrate. The hole transport layer is made of a polymer material. This invention improves the crystallinity of each sub-hole transport layer, thereby significantly improving the carrier mobility and conductivity of each sub-hole transport layer.