101 results about "Carbon doped" patented technology

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

An electrode which includes nanoparticles of a carbon-doped tin oxide of formula C—SnO2-x where x=is from 0.001 to 0.1, having surface oxygen vacancies. The electrode includes a fluorine-doped tin oxide substrate. A film of the nanoparticles is present on at least one surface of the fluorine-doped tin oxide substrate. The surface oxygen vacancies correspond to an O 1s peak shift of 0.5-2 eV in the X-ray photoelectron spectroscopy (XPS) for C—SnO2-x compared to C—SnO2 without surface oxygen vacancies.

The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

The invention discloses a GaN HEMT epitaxial structure with a special high-resistance layer, the epitaxial structure is provided with the special high-resistance layer between a transition layer and a barrier layer, the special high-resistance layer comprises at least one high-resistance layer and at least one delta-doped layer which are sequentially and alternately stacked, the carbon doping concentration of the delta-doped layer is higher than that of the high-resistance layer, and the delta-doped layer is arranged between the transition layer and the barrier layer. The delta doping layer can optimize the electric field distribution so as to effectively improve the breakdown voltage of the HEMT epitaxial structure and further improve the voltage withstanding performance of the HEMT device.

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a first vertical stack comprising vertically-alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. A second vertical stack is aside the first vertical stack. The second vertical stack comprises insulative tiers collectively comprising at least two different compositions relative individual of the insulative tiers. Individual of the at least two different compositions comprise silicon nitride. One of the individual different compositions comprise carbon-doped silicon nitride having at least 0.5 atomic percent more carbon than atomic percent of carbon, if any, in the silicon nitride of another of the individual different compositions. Other embodiments, including method, are disclosed.

The invention provides an in-situ carbon-doped modified lithium ferrous silicate preparation method which comprises the following steps: S1, preparing phenolic resin / silicon dioxide composite hollow spheres by adopting resorcinol, formaldehyde and a silicon source, then adding an iron source and a lithium source for reaction, and synthesizing by adopting a hydrothermal method to obtain a modified lithium ferrous silicate precursor; and S2, calcining the modified lithium ferrous silicate precursor prepared in S1 in an inert gas atmosphere to obtain the in-situ carbon-doped modified lithium ferrous silicate material. According to the method, the phenolic resin / silicon dioxide composite hollow sphere precursor is prepared, a stable Si-C bond is formed in the precursor, and the in-situ carbon-doped modified lithium ferrous silicate material is prepared by taking the Si-C bond as a silicon source, so that compared with heteroatom-doped carbon layer modification, the method disclosed by the invention has the advantages that side reactions can be reduced, breakage of a carbon layer is avoided, and the service life of the lithium ferrous silicate material is prolonged. Modification is more uniform, the preparation process is simple, and the cost is lower.

The present invention is a silicene layer-containing silicon substrate and a method for producing the same, the silicene layer-containing silicon substrate being characterized by comprising a silicene layer on a silicon substrate and a carbon-doped silicon layer on the silicene layer. Thus, provided are: a silicene layer-containing silicon substrate in which oxidation of the silicene layer is suppressed; and a method for producing the same.

The invention relates to an electrical connector (1), especially an electrical plug connector, comprising a connecting part (1a) and a coupling part (1b) which each have a metallic contact region (2, 2'), wherein the connecting part (1a) is electrically conductively connectable to the coupling part (1b) via the metallic contact regions (2, 2'), and wherein at least one of the metallic contact regions (2, 2') at least partially comprises a layer system (3) applied by a PVD process. The layer system (3) comprises a first layer (3a) of titanium or chromium arranged in the metallic contact region (2, 2') and an at least one second layer (3b) arranged on the first layer (3a) and formed either from carbon-doped titanium and / or chromium or alternatively formed from a carbide comprising titanium carbide and / or chromium carbide, and at least one third layer (3c) arranged on the at least one second layer (3b) and composed of a hydrogen-free tetrahedral amorphous carbon having an sp3 content of greater than 50% as bonding type, undoped or doped with at least one element from the group comprising copper, tungsten, molybdenum, chromium, silver, titanium, iridium, gold, silicon in a concentration in the range from 2 to 30 at%.

Methods of reducing wafer bowing in 3D DRAM devices are described using stacks including one or more of epitaxial silicon (Si), carbon doped silicon (SiC), silicon germanium (SiGe), and carbon-doped silicon germanium (SiGeC). A plurality of film stacks is formed on a substrate surface, each of the film stacks comprises two doped silicon layers having different dopant amounts and a sacrificial layer that may be doped or undoped. 3D DRAM devices are also described.

A method for producing a semiconductor wafer, the method including steps of: (1) forming a carbon-doped silicon film on a silicon substrate at a first temperature; (2) forming a carbon-undoped silicon film on the carbon-doped silicon film at the first temperature to obtain a stacked wafer; and (3) annealing the stacked wafer at a second temperature higher than the first temperature or further forming a film on the stacked wafer at the second temperature to obtain a semiconductor wafer. This provides a method for producing a semiconductor wafer having a carbon-containing silicon layer without precipitation of SiC on the wafer surface and with inhibited other defects.

Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from 5 Ångstroms to 20 Ångstroms on the sidewall, the top surface, and the bottom using a physical vapor deposition process. The method includes doping an external portion of the cobalt liner layer with carbon, the external portion of the cobalt liner layer having a thickness in a range of from 1 Ångstrom to 5 Ångstroms to form a lined feature. Copper is deposited into the lined feature.

This invention belongs to the field of catalytic chemical technology, disclosing an HZSM-5 molecular sieve-based hydrocracking catalyst, its preparation method, and its applications. The catalyst prepared by this invention uses HZSM-5 molecular sieve as the support and non-noble metal Ni as the active phase. Different carbon sources are doped to prepare Ni / HZSM-5 catalysts with varying carbon doping, among which the CA-Ni / HZSM-5 catalyst prepared using citric acid as the carbon source exhibits the best performance. The catalyst prepared by this invention has low loading, high dispersion, and small Ni particle size. The catalyst maintains stable activity after five cycles. The catalyst described in this invention exhibits high catalytic activity in the LDPE hydrocracking reaction to produce C3 gas.

A chemical-mechanical polishing composition for polishing a substrate having a silicon-oxygen material includes a liquid carrier, cubic ceria abrasive particles dispersed in the liquid carrier, and an organic diacid.

A process for depositing a high quality smooth and continuous silicon-containing film comprising: a) providing at least one substrate in a reactor, b) heating the reactor to at least one temperature in the range of ambient temperature to about 750 DEG C, and optionally maintaining the reactor at a pressure of about 100 torr or less, c) introducing into the reactor at least one first silicon precursor comprising at least one organic amino group and at least one halide group and having the formula: SiHmXn (NR1R2) 4-m-n wherein m-0, 1, 2; m is 1, n-1, 2, 3, and m + n is less than 3; x is selected from the group consisting of Cl, Br and I; r1 and R2 are each independently selected from the group consisting of a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cycloalkyl group, a C2 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group, to form a first silicon-containing layer, d) purging any unreacted precursor from the reactor with an inert gas, e) introducing a nitrogen source to react with the first silicon-containing layer to form a seed layer comprising at least one selected from the group consisting of silicon nitride and carbon-doped silicon nitride, f) purging the reactor with an inert gas, g) introducing into the reactor at least one second silicon precursor comprising a halogenated silicon-containing compound, the first silicon-containing layer comprises at least one selected from the group consisting of silicon nitride, carbon-doped silicon nitride, silicon oxynitride, and carbon-doped silicon oxynitride, h) purging the reactor with an inert gas, i) introducing a nitrogen source to react with the second silicon-containing layer to form silicon nitride or carbon-doped silicon nitride, and d) introducing a nitrogen source to react with the silicon nitride or carbon-doped silicon nitride to form a second silicon-containing layer comprising at least one selected from the group consisting of silicon nitride, carbon-doped silicon nitride and carbon-doped silicon oxynitride. And j) purging the reactor with an inert gas.

Halosilyl-substituted cyclic silicon precursor compounds have a carbon-to-silicon ratio of at least 2: 1, and are defined by Formula I herein. A method of forming a film comprising silicon and oxygen and having a carbon content ranging from 10 at.% to 50 at.% by a thermal ALD process includes placing one or more substrates comprising surface features into a reactor; heating the reactor to one or more temperatures in the range of ambient temperature to about 600 DEG C and optionally maintaining the reactor at a pressure of 100 torr or less; introducing into the reactor at least one silicon precursor according to formula I; purging with inert gas; providing a nitrogen source into the reactor to react with the surface to form a carbon-doped silicon nitride film, purging with an inert gas to remove reaction by-products, repeating the steps to provide a carbon-doped silicon nitride film of a desired thickness, treating the resulting carbon-doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to 1000 DEG C or from about 100 DEG C to 400 DEG C to convert the carbon-doped silicon nitride film to a carbon-doped silicon oxide film; and exposing the carbon-doped silicon oxide film to a plasma comprising hydrogen.

A composition is used in a process for depositing a silicon oxide film or a carbon doped silicon oxide film using a deposition process, wherein the composition includes at least one silicon precursor having a structure represented by Formula I as described herein

A device structure includes at least one alternating stack of respective insulating layers and respective electrically conductive layers; at least one retro-stepped dielectric material portion; a memory opening vertically extending through each layer within the at least one alternating stack; a memory opening fill structure located in the memory opening and including a vertical stack of memory elements; and a contact via structure including a laterally bulging portion in contact with a first electrically conductive layer, an upper portion, and a lower portion. In one embodiment, each insulating layer may comprise a respective carbon-doped silicate glass layer. In one embodiment, second electrically conductive layers that underlie the first electrically conductive layer may be laterally offset from the lower portion by a greater lateral offset distance than an outermost surface of the laterally bulging portion.

This invention provides a method for preparing a carbon-doped carbon nitride photocatalyst, comprising the following steps: (1) melamine, cyanuric acid, and 2,4,6-triaminopyrimidine are mixed in a solvent, ultrasonically dispersed, and stirred for 12–36 h. The mixture is then washed, centrifuged, and dried. After grinding and sieving, a solid supramolecular precursor is obtained. (2) The solid supramolecular precursor obtained in step (1) is placed in air, heated to 300°C–500°C, and calcined for 2–6 h to form a mixture of carbon-doped melamine, cyanuric acid, and their oligomers. (3) The mixture obtained in step (2) is thoroughly mixed with molten salt, calcined at 500°C–600°C for 2–6 h, cooled, and thoroughly washed with deionized water to remove the mixed salt. The solid residue is separated and dried to obtain the carbon-doped carbon nitride photocatalyst. The prepared carbon-doped carbon nitride photocatalyst is simple to synthesize, structurally stable, and exhibits excellent separation and migration efficiency of photogenerated carriers, as well as excellent photocatalytic hydrogen peroxide production performance.

The invention relates to an electrical connector (1), in particular an electrical connector, comprising a terminal part (1a) and a coupling part (1b), each having a metallic contact area (2, 2'), wherein the terminal part (1a) can be electrically connected to the coupling part (1b) via the metallic contact areas (2, 2'), and wherein at least one of the metallic contact areas (2, 2') has at least a partial coating system (3) applied by a PVD process. The coating system (3) comprises - a first layer (3a) of titanium or chromium arranged in the metallic contact area (2, 2'), and - at least one second layer (3b) arranged on the first layer (3a), which is formed either of carbon-doped titanium and / or chromium or alternatively of a carbide comprising titanium carbide and / or chromium carbide, and arranged on the at least one second layer (3b) at least one third layer (3c) of a hydrogen-free tetrahedral amorphous carbon with a sp 3 -Proportion of greater than 50% as bond type, which is undoped or has a doping of at least one element of the group comprising copper, tungsten, molybdenum, chromium, silver, titanium, iridium, gold, silicon, in a concentration in the range of 2 to 30 at%.

A method of coating an internal surface of a tubular member includes: forming a sublayer on the internal surface of the tubular member, the sublayer including a chromium sublayer, a polymer sublayer containing electrically conductive or semi-conductive particles, or a diamond-like carbon sublayer containing an undoped diamond-like carbon material; disposing a hydrophobic layer on the sublayer via a plasma-assisted chemical deposition thereby forming the coating on the internal surface of the tubular member, the hydrophobic layer including a doped diamond-like carbon material, and the doped diamond-like carbon material containing an amorphous diamond-like carbon doped with Si and optionally at least one of F, Co, Cr, W, or Ti.

The invention discloses a multi-atom doped porous carbon material and a preparation method and application thereof.The porous carbon material is sodium lignin sulfonate carbon doped with phosphorus, boron, nitrogen and selenium, and the preparation method comprises the steps that the carbon material is activated and doped through solvothermal reaction to obtain a precursor, and then the precursor is subjected to high-temperature carbonization, potassium hydroxide activation and acid pickling to obtain the multi-atom doped porous carbon material. The polyatom-doped sodium lignin sulfonate porous carbon is obtained. The polyatom-doped sodium lignin sulfonate porous carbon prepared by the method provided by the invention has the advantages of ordered microstructure, hierarchical pore structure and high specific surface area, the specific surface area is greater than 2000m < 2 > / g, and the polyatom-doped sodium lignin sulfonate porous carbon can be applied to a supercapacitor electrode material, can provide a good channel for rapid diffusion and transmission of electrolyte ions in an electrochemical process, and can be used for preparing a supercapacitor electrode material. The utilization rate of active sites is increased, higher specific capacitance and excellent rate capability (the specific capacitance retention rate is greater than 60%) are shown, and the application value is good.

An electrode which includes nanoparticles of a carbon-doped tin oxide of formula C—SnO2-x where x=is from 0.001 to 0.1, having surface oxygen vacancies. The electrode includes a fluorine-doped tin oxide substrate. A film of the nanoparticles is present on at least one surface of the fluorine-doped tin oxide substrate. The surface oxygen vacancies correspond to an O 1s peak shift of 0.5-2 eV in the X-ray photoelectron spectroscopy (XPS) for C—SnO2-x compared to C—SnO2 without surface oxygen vacancies.

The invention provides a negative electrode active material and a preparation method and application thereof, the negative electrode active material comprises: an active substrate, the active substrate comprising germanium particles; the coating layer is arranged on at least part of the surface of the active matrix, and the coating layer is a carbon-doped titanium-tin bimetallic oxide; the coating layer is obtained by forming a titanium-tin bimetal organic framework compound and then carbonizing an organic ligand in the titanium-tin bimetal organic framework compound. According to the negative electrode active material as well as the preparation method and the application thereof provided by the invention, the transmission of electrons and ions can be promoted while the volume expansion of the germanium particles is inhibited, so that the electrochemical performance of the negative electrode active material is improved.

This paper discloses a 3d transition metal M-rare earth metal R bicomponent carbon-supported Pt catalyst, its preparation method, and its application. It relates to the catalyst supported on carbon doped with Pt, its preparation method, and its application. This catalyst aims to address the poor catalytic activity and stability of existing Pt / C catalysts. The catalyst consists of Pt nanoparticles supported on an M-R bicomponent carbon support, where M is Fe, Co, Ni, or Zn, and R is Ce, Nd, or Gd. Preparation method: M and R ions are complexed with a nitrogen source ligand on a carbon surface and then carbonized at high temperature to obtain the M-R bicomponent carbon support. Then, Pt is loaded using a microwave reduction method to obtain the M-R bicomponent carbon-supported Pt catalyst. The mass activities of Pt / Fe-Ce-NC and Pt / Co-Ce-NC are 0.27 and 0.22 A / mg, respectively. Pt It is 2.8 and 2.3 times that of Pt / C, and can be used in the field of proton exchange membrane fuel cells.

The invention discloses efficient tumor sonodynamic therapy nanoparticles based on carbon-doped nano-zinc oxide as well as a preparation method and application of the efficient tumor sonodynamic therapy nanoparticles. Belongs to the field of biomedicine. On the basis of MOF-5, carbon-doped hollow-hole-shaped nano-particles C-ZnO are formed after calcination in a nitrogen atmosphere, then chloroplatinic acid hexahydrate and sodium borohydride are added into a C-ZnO nano-particle solution, so that Pt nano-particles are loaded on the surface of C-ZnO, in addition, AB is loaded in a CZP hollow structure, HA-AA modification is carried out on the surface of the CZP hollow structure, and the CZP hollow structure loaded with the AB is obtained. Therefore, the effects of hydrogen treatment, consumption of excessive glutathione in a biological microenvironment and targeting are achieved, and the effect of treating cancers is achieved from multiple aspects. The nano particles are uniform in size, the average particle size is about 200 nm, good biocompatibility is achieved, and the material prepared through the method has excellent ROS generation capacity, so that the material has excellent sonodynamic therapy potential and has wide application prospects in the field of tumor therapy.

The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded AlyGa1-yN layer, and an undoped N-polar plane AlxGa1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiNz passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.

The present invention discloses a preparation method of a silicon-carbon composite material and a silicon-carbon composite material. The preparation method includes: preparing a porous carbon-doped porous copper complex, and depositing nano-silicon on the porous carbon-doped porous copper complex according to a silane pyrolysis method, to obtain the silicon-carbon composite material. The preparation of the porous carbon-doped porous copper complex includes at least operation steps of: S11). uniformly mixing carbon disulfide, activated carbon, and a binder, and pressing an obtained mixture into copper foam to form a sheet-like structure; and S12). transferring the sheet-like structure obtained in the step S11) to a carbonization apparatus, and performing heating and carbonization in an inert atmosphere to obtain the porous carbon-doped porous copper complex. In the present invention, the following obvious defects and problems are significantly alleviated: The nano-silicon cannot be completely deposited in porous carbon when only pure porous carbon is used as a substrate for depositing the nano-silicon, thus affecting expansion and high-temperature preservation performance of the silicon-carbon composite material due to exposure of the nano-silicon; and the use of a pure porous metal for depositing the nano-silicon leads to poor consistency and low efficiency.

This invention provides an epitaxial wafer and its preparation method. This invention utilizes C-doped Sc x Ga y Al 1‑x‑y An N-type buffer layer (y = 0 or y ≠ 0) is used as the buffer layer, C-doped ScN is used as the insertion layer, and the second carbon-doped Sc is controlled. x Ga y Al 1‑x‑y The lattice constant of the N-buffer layer is greater than that of the first carbon-doped Sc. x Ga y Al 1‑x‑y The lattice constant of the N-doped buffer layer, and the lattice constant of the carbon-doped buffer layer, is less than that of the GaN thin film. This can improve the crystal stress and crystal quality of GaN epitaxial films, and reduce the dislocation density of heteroepitaxial GaN thin films to 6 × 10⁻⁶. 7 cm ‑2 The following technologies can meet the requirements of high-power GaN-LEDs, Micro-LEDs, GaN-HEMTs, and GaN power devices, thereby promoting the development of the industry chain.