159 results about "Carbon doped" patented technology

The invention discloses a carbon-doped titanium dioxide nanotube-molybdenum disulfide energy-storage antibacterial material and a preparation method thereof. The preparation method comprises the following steps: carrying out primary anodic oxidation on a clean titanium foil in a mixed electrolyte of ethylene glycol, water and ammonium fluoride; after ultrasonic treatment is carried out in a hydrochloric acid solution for set time, secondary anodic oxidation is carried out, and the mixed electrolyte of the secondary anodic oxidation is the same as that of the primary anodic oxidation; annealing the titanium foil subjected to anodic oxidation twice in an argon atmosphere, putting an annealed sample into a mixed solution of sodium molybdate, a sulfur source and glucose, and carrying out hydrothermal treatment; and the titanium foil subjected to hydro-thermal treatment is cleaned and dried, and the carbon-doped titanium dioxide titanium foil with the surface covered with molybdenum disulfide is obtained. The MoS2-coated carbon-doped titanium dioxide nanotube (TNT-C-atMoS2) with high biocompatibility developed by the invention has a synergistic effect of charge antibiosis and chemical sterilization, so that the problem of intractable biological fouling of a titanium-based metal material in ocean engineering equipment is effectively solved.

The invention relates to a negative pole piece and a preparation method and application thereof.The negative pole piece comprises a current collector and a negative active layer arranged on at least one face of the current collector in the thickness direction, the negative active layer comprises a first active layer, a second active layer and a third active layer, the first active layer is attached to the surface of the current collector, and the second active layer is attached to the surface of the current collector; the second active layer is arranged on the surface, far away from the current collector, of the first active layer, and the third active layer is arranged on the surface, far away from the first active layer, of the second active layer; the first active layer comprises carbon-coated secondary particle graphite, the second active layer comprises heteroatom-doped hard carbon, and the third active layer comprises porous carbon nanofibers. According to the lithium ion battery, the multiple active layers containing different active materials are arranged on the surface of the current collector, and meanwhile, the thickness of each active layer is regulated and the preparation process is optimized, so that the lithium ion battery containing the negative pole piece has high energy density, quick charge capacity and excellent cycle life.

An anode material, including a matrix material, and the matrix material comprises carbon-doped silicon monoxide, and a content of the carbon ranges from 0.5% to 10% based on a total mass of the carbon and silicon monoxide. The anode material can significantly improve the cycle performance of an electrochemical device at room temperature and high temperature.

The invention belongs to the technical field of photocatalytic materials, and particularly discloses a phosphate radical and carbon doped Z-type photocatalytic material and a preparation method and application thereof.The preparation method comprises the following steps that LCN is prepared, specifically, Chinese redbud tree dead leaf powder and urea are fully mixed and then placed in a muffle furnace to be calcined, and LCN is obtained; the preparation of LCN / Ag3PO4 comprises the following steps: putting LCN into ultrapure water, adding silver nitrate, dropwise adding a Na3PO4 solution, stirring in a dark place, carrying out suction filtration and washing on the material, and finally carrying out freeze drying and collection to obtain the LCN / Ag3PO4. According to the phosphate radical and carbon doped Z-type photocatalytic material as well as the preparation method and the application thereof, ordered transmission of electrons on the interface of the Z-type composite material is induced through dual driving force formed by a carbon intermediate energy level and PO4 < 3->, so that the migration and separation efficiency of generated carriers can be remarkably improved, and the photocatalytic performance of the photocatalytic material is improved. And a certain theoretical support and experimental basis are provided for preparing a high-efficiency heterojunction photocatalytic material.

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

The invention discloses a carbon-doped carbon nitride nanotube as well as a preparation method and application thereof in photocatalytic reaction, and belongs to the technical field of inorganic photocatalytic nano materials. Comprising the following steps: roasting urea, melamine and 2, 4, 6-triaminopyridine under protective gas; adding the carbon-doped carbon nitride nanotube, 5-hydroxymethylfurfural and chloroplatinic acid hexahydrate into the deionized water; photocatalytic hydrogen evolution is started to cooperate with selective oxidation reaction of 5-hydroxymethylfurfural. The carbon-doped carbon nitride prepared by the preparation method disclosed by the invention is in a nanotube shape; and the catalyst can be effectively applied to solar photocatalytic hydrogen evolution to cooperate with selective oxidation of 5-hydroxymethylfurfural to generate 2, 5-diformyl furan. The invention mainly solves the problems that the value-added reaction cooperated with the hydrogen production process cannot be realized and the overall economic value cannot be improved in the traditional hydrogen production means. The method is an effective, practical and simple method, is suitable for laboratory preparation and industrial production, and has huge development space and application prospect.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

Method comprising: Depositing a dummy gate (70, 76) over and along sidewalls of a fin (36, 56) extending upwardly from a semiconductor substrate (32, 50); Forming a first gate spacer (80) along a sidewall of the dummy gate (70, 76); plasma doping the first gate spacer (80) with carbon to form a carbon-doped gate spacer (80B); Forming a source / drain region (42, 44, 82, 84) adjacent to a channel region (108, 112) of the fin (36, 56); and Diffusing carbon from the carbon-doped gate spacer (80B) into a first region of the fin (36, 56) to provide a first carbon-doped region (106, 110), the first carbon-doped region (106, 110) being disposed between at least a portion of the source / drain region (42, 44, 82, 84) and the channel region (108, 112) of the fin (36, 56); wherein forming the source / drain region (42, 44, 82, 84) comprises etching a second portion of the rib (36, 56) to provide a recess (102, 104) adjacent to the first portion of the rib (36, 56), the method further comprising plasma doping the recess (102, 104) with carbon to form a second carbon-doped region (107, 111) along sidewalls and a bottom surface of the recess (102, 104).

The invention discloses a carbon-doped molybdenum-based MOF (Metal Organic Framework) derived porous MRI (Magnetic Resonance Imaging) probe as well as a preparation method and anti-infection application thereof, and belongs to the technical field of nano medicines. According to the scheme, the method comprises the steps that a copper-molybdenum-based precursor is subjected to high-temperature sintering in an inert atmosphere, then NH3 is introduced, heat preservation is continued, a nitridation reaction is promoted, and a carbon-doped MoN MOF material is prepared; and immersing the material into a gadolinium salt solution, stirring, centrifuging, washing and drying to obtain the gadolinium ion-loaded porous MRI probe. According to the invention, efficient loading and stable fixation of gadolinium ions are realized, and the MRI imaging contrast ratio is improved while the biotoxicity risk is reduced. The porous skeleton structure is combined with the carbon doping design, so that the structural stability of the material in a biological environment is enhanced, and the performance maintenance of the probe during long-term use in vivo is ensured. The conductive network formed by the nitridation reaction further optimizes the magnetic response characteristic, and provides a basis for high-sensitivity imaging.

An electrode which includes nanoparticles of a carbon-doped tin oxide of formula C—SnO2-x where x=is from 0.001 to 0.1, having surface oxygen vacancies. The electrode includes a fluorine-doped tin oxide substrate. A film of the nanoparticles is present on at least one surface of the fluorine-doped tin oxide substrate. The surface oxygen vacancies correspond to an O 1s peak shift of 0.5-2 eV in the X-ray photoelectron spectroscopy (XPS) for C—SnO2-x compared to C—SnO2 without surface oxygen vacancies.

The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

The invention discloses a GaN HEMT epitaxial structure with a special high-resistance layer, the epitaxial structure is provided with the special high-resistance layer between a transition layer and a barrier layer, the special high-resistance layer comprises at least one high-resistance layer and at least one delta-doped layer which are sequentially and alternately stacked, the carbon doping concentration of the delta-doped layer is higher than that of the high-resistance layer, and the delta-doped layer is arranged between the transition layer and the barrier layer. The delta doping layer can optimize the electric field distribution so as to effectively improve the breakdown voltage of the HEMT epitaxial structure and further improve the voltage withstanding performance of the HEMT device.

An assembly and method of use are herein disclosed. The method comprises coupling an antenna and an electromagnetic wave via a passive waveguide having a cross-section dimension, the passive waveguide carrying the electromagnetic wave having a carrier frequency in a range of 500 GHz to 10 THz, the electromagnetic wave having a wavelength, the cross-section dimension of the passive waveguide in a range of at least 4 wavelengths to 50 wavelengths; and positioning an electromagnetic absorber around the antenna.

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a first vertical stack comprising vertically-alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. A second vertical stack is aside the first vertical stack. The second vertical stack comprises insulative tiers collectively comprising at least two different compositions relative individual of the insulative tiers. Individual of the at least two different compositions comprise silicon nitride. One of the individual different compositions comprise carbon-doped silicon nitride having at least 0.5 atomic percent more carbon than atomic percent of carbon, if any, in the silicon nitride of another of the individual different compositions. Other embodiments, including method, are disclosed.

This invention relates to a device based on a porous carbon-doped electrode and its fabrication method, belonging to the field of optical communication technology. The device provided by this invention sequentially comprises a conductive substrate, an electron transport layer, a perovskite layer, a hole transport layer, and a porous carbon-doped electrode; the porous carbon-doped electrode is a porous carbon electrode doped with a conductive metal, at least one of Ag, Cu, Al, and Au. The device fabricated using the specific method of this invention can solve the problems of small bandwidth and slow PD response speed of existing perovskite devices. Simultaneously, the device, with its high transmission speed and wide transmission bandwidth, can achieve stable and complete signal transmission at higher frequencies in the field of optical communication, and has high application value.

The invention provides an in-situ carbon-doped modified lithium ferrous silicate preparation method which comprises the following steps: S1, preparing phenolic resin / silicon dioxide composite hollow spheres by adopting resorcinol, formaldehyde and a silicon source, then adding an iron source and a lithium source for reaction, and synthesizing by adopting a hydrothermal method to obtain a modified lithium ferrous silicate precursor; and S2, calcining the modified lithium ferrous silicate precursor prepared in S1 in an inert gas atmosphere to obtain the in-situ carbon-doped modified lithium ferrous silicate material. According to the method, the phenolic resin / silicon dioxide composite hollow sphere precursor is prepared, a stable Si-C bond is formed in the precursor, and the in-situ carbon-doped modified lithium ferrous silicate material is prepared by taking the Si-C bond as a silicon source, so that compared with heteroatom-doped carbon layer modification, the method disclosed by the invention has the advantages that side reactions can be reduced, breakage of a carbon layer is avoided, and the service life of the lithium ferrous silicate material is prolonged. Modification is more uniform, the preparation process is simple, and the cost is lower.

The invention discloses a method for degrading tetracycline hydrochloride in water by using a carbon-doped 1T / 2H mixed-phase molybdenum disulfide catalyst. The method comprises the following steps: (1) preparing the carbon-doped 1T / 2H mixed-phase molybdenum disulfide catalyst; and (2) tetracycline hydrochloride degradation. The carbon-doped 1T / 2H mixed-phase molybdenum disulfide catalyst prepared by a one-step hydrothermal method is high in catalytic efficiency and good in stability, the preparation method is simple, application of a peroxymonosulfate advanced oxidation technology in the field of tetracycline hydrochloride degradation wastewater treatment can be further promoted, the market is huge, and the prospect is considerable.

The present invention is a silicene layer-containing silicon substrate and a method for producing the same, the silicene layer-containing silicon substrate being characterized by comprising a silicene layer on a silicon substrate and a carbon-doped silicon layer on the silicene layer. Thus, provided are: a silicene layer-containing silicon substrate in which oxidation of the silicene layer is suppressed; and a method for producing the same.

The semiconductor device and electronic device of the present disclosure include: a substrate; a nucleation layer located on one side of the substrate; a channel layer located on the side of the nucleation layer away from the substrate; a barrier layer located on the side of the channel layer away from the nucleation layer; a buffer layer located between the nucleation layer and the channel layer, the buffer layer includes a doped superlattice layer, and the doped superlattice layer includes a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

The invention relates to an electrical connector (1), especially an electrical plug connector, comprising a connecting part (1a) and a coupling part (1b) which each have a metallic contact region (2, 2'), wherein the connecting part (1a) is electrically conductively connectable to the coupling part (1b) via the metallic contact regions (2, 2'), and wherein at least one of the metallic contact regions (2, 2') at least partially comprises a layer system (3) applied by a PVD process. The layer system (3) comprises a first layer (3a) of titanium or chromium arranged in the metallic contact region (2, 2') and an at least one second layer (3b) arranged on the first layer (3a) and formed either from carbon-doped titanium and / or chromium or alternatively formed from a carbide comprising titanium carbide and / or chromium carbide, and at least one third layer (3c) arranged on the at least one second layer (3b) and composed of a hydrogen-free tetrahedral amorphous carbon having an sp3 content of greater than 50% as bonding type, undoped or doped with at least one element from the group comprising copper, tungsten, molybdenum, chromium, silver, titanium, iridium, gold, silicon in a concentration in the range from 2 to 30 at%.

Methods of reducing wafer bowing in 3D DRAM devices are described using stacks including one or more of epitaxial silicon (Si), carbon doped silicon (SiC), silicon germanium (SiGe), and carbon-doped silicon germanium (SiGeC). A plurality of film stacks is formed on a substrate surface, each of the film stacks comprises two doped silicon layers having different dopant amounts and a sacrificial layer that may be doped or undoped. 3D DRAM devices are also described.

The application discloses a method for degrading paracetamol in water by using carbon-doped boron nitride to activate periodic acid, which is characterized by using carbon-doped boron nitride to activate periodic acid to degrade water containing paracetamol; the carbon-doped boron nitride catalyst is prepared by coating boron nitride with polydopamine and calcining, wherein the calcining temperature is 700-1000 DEG C. The method can efficiently activate a low-dose periodic acid oxidant by using the carbon-doped boron nitride catalyst, thereby efficiently degrading paracetamol, and has the advantages of simple process, convenient operation, high oxidant utilization rate, fast degradation efficiency, good removal effect and the like, and is a green and environment-friendly method, which has practical significance for wastewater treatment in the environment.

A semiconductor-on-insulator (SOI) structure includes a semiconductor layer over a buried oxide over a handle wafer. A carbon-doped epitaxial layer is in the semiconductor layer. A doped body region is in the semiconductor layer under the carbon-doped epitaxial layer and extending to the buried oxide. The carbon-doped epitaxial layer and the doped body region have a same conductivity type. Alternatively, a doped body region in the semiconductor layer and extending to the buried oxide includes carbon dopants and body dopants, wherein a peak carbon dopant concentration is situated at a first depth, and a peak body dopant concentration is situated at a second depth below the first depth. Alternatively, an SOI transistor in the semiconductor layer includes a halo region having a different conductivity type from a source and a drain. The halo region includes carbon dopants and body dopants. The source and / or the drain adjoin the halo region.

A method for producing a semiconductor wafer, the method including steps of: (1) forming a carbon-doped silicon film on a silicon substrate at a first temperature; (2) forming a carbon-undoped silicon film on the carbon-doped silicon film at the first temperature to obtain a stacked wafer; and (3) annealing the stacked wafer at a second temperature higher than the first temperature or further forming a film on the stacked wafer at the second temperature to obtain a semiconductor wafer. This provides a method for producing a semiconductor wafer having a carbon-containing silicon layer without precipitation of SiC on the wafer surface and with inhibited other defects.

Interconnect structures in a microelectronic device and methods of forming the same are described. The method comprises processing a substrate comprising a dielectric layer disposed thereon, the dielectric layer having one or more features including an opening, a sidewall, a top surface, a bottom. The method includes forming a cobalt liner layer having a thickness in a range of from 5 Ångstroms to 20 Ångstroms on the sidewall, the top surface, and the bottom using a physical vapor deposition process. The method includes doping an external portion of the cobalt liner layer with carbon, the external portion of the cobalt liner layer having a thickness in a range of from 1 Ångstrom to 5 Ångstroms to form a lined feature. Copper is deposited into the lined feature.

The present invention provides a gallium nitride semiconductor device and a method for fabricating the same. The method includes forming a carbon-doped layer between a buffer layer and a channel layer using an extrinsic dopant via an external carbon doping method. The growth conditions for the external carbon doping method are: a substrate surface temperature greater than or equal to 900°C, a growth pressure greater than or equal to 50 mbar, and a V / III ratio greater than or equal to 200. The gallium nitride semiconductor device exhibits uniform carbon concentration and good device breakdown uniformity.

The present invention provides an epitaxial wafer, an epitaxial wafer growth method, and a high electron mobility transistor. The epitaxial wafer comprises a sequentially stacked Si substrate, an AlN nucleation layer, a high-resistance buffer layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN cap layer. The high-resistance buffer layer comprises a first carbon-doped AlGaN layer, a second carbon-doped AlGaN layer, and a third carbon-doped AlGaN layer, the first carbon-doped AlGaN layer being disposed proximal to the AlN nucleation layer. The doping concentration of the first carbon-doped AlGaN layer uniformly changes from high to low, the doping concentration of the second carbon-doped AlGaN layer remains constant, and the doping concentration of the third carbon-doped AlGaN layer uniformly changes from low to high. Compared with the prior art, the epitaxial wafer proposed by the present invention achieves both high resistance and high crystal quality.

This invention belongs to the field of catalytic chemical technology, disclosing an HZSM-5 molecular sieve-based hydrocracking catalyst, its preparation method, and its applications. The catalyst prepared by this invention uses HZSM-5 molecular sieve as the support and non-noble metal Ni as the active phase. Different carbon sources are doped to prepare Ni / HZSM-5 catalysts with varying carbon doping, among which the CA-Ni / HZSM-5 catalyst prepared using citric acid as the carbon source exhibits the best performance. The catalyst prepared by this invention has low loading, high dispersion, and small Ni particle size. The catalyst maintains stable activity after five cycles. The catalyst described in this invention exhibits high catalytic activity in the LDPE hydrocracking reaction to produce C3 gas.

A chemical-mechanical polishing composition for polishing a substrate having a silicon-oxygen material includes a liquid carrier, cubic ceria abrasive particles dispersed in the liquid carrier, and an organic diacid.