196 results about "Carbon doped" patented technology

The invention discloses a carbon-doped titanium dioxide nanotube-molybdenum disulfide energy-storage antibacterial material and a preparation method thereof. The preparation method comprises the following steps: carrying out primary anodic oxidation on a clean titanium foil in a mixed electrolyte of ethylene glycol, water and ammonium fluoride; after ultrasonic treatment is carried out in a hydrochloric acid solution for set time, secondary anodic oxidation is carried out, and the mixed electrolyte of the secondary anodic oxidation is the same as that of the primary anodic oxidation; annealing the titanium foil subjected to anodic oxidation twice in an argon atmosphere, putting an annealed sample into a mixed solution of sodium molybdate, a sulfur source and glucose, and carrying out hydrothermal treatment; and the titanium foil subjected to hydro-thermal treatment is cleaned and dried, and the carbon-doped titanium dioxide titanium foil with the surface covered with molybdenum disulfide is obtained. The MoS2-coated carbon-doped titanium dioxide nanotube (TNT-C-atMoS2) with high biocompatibility developed by the invention has a synergistic effect of charge antibiosis and chemical sterilization, so that the problem of intractable biological fouling of a titanium-based metal material in ocean engineering equipment is effectively solved.

The invention relates to a negative pole piece and a preparation method and application thereof.The negative pole piece comprises a current collector and a negative active layer arranged on at least one face of the current collector in the thickness direction, the negative active layer comprises a first active layer, a second active layer and a third active layer, the first active layer is attached to the surface of the current collector, and the second active layer is attached to the surface of the current collector; the second active layer is arranged on the surface, far away from the current collector, of the first active layer, and the third active layer is arranged on the surface, far away from the first active layer, of the second active layer; the first active layer comprises carbon-coated secondary particle graphite, the second active layer comprises heteroatom-doped hard carbon, and the third active layer comprises porous carbon nanofibers. According to the lithium ion battery, the multiple active layers containing different active materials are arranged on the surface of the current collector, and meanwhile, the thickness of each active layer is regulated and the preparation process is optimized, so that the lithium ion battery containing the negative pole piece has high energy density, quick charge capacity and excellent cycle life.

The invention belongs to the technical field of water treatment, and particularly relates to a method for regulating and controlling a nanoscale zero-valent iron shell structure to enhance the reaction activity of the nanoscale zero-valent iron shell structure. The carbon-doped nano zero-valent iron is of a core-shell structure; the carbon-doped nanoscale zero-valent iron comprises a nanoscale zero-valent iron core with carbon gradient doping and an iron carbide shell layer located on the surface of the nanoscale zero-valent iron core. By means of collision between grinding balls and material (Fe and C) particles, deformation and crushing of the ground material particles are achieved through friction force, shearing force, tension and the like, an oxidation shell layer of nanoscale zero-valent iron is broken, Fe < 0 > is exposed on the surface of the material and further doped with activated carbon to form an iron carbide shell layer to construct Fe-C double-active sites, the reaction activity of the material is improved, and the service life of the material is prolonged. The reducibility and electron transfer capability of the nZVI are effectively improved, meanwhile, after the nZVI is subjected to the action of mechanical force, the lattice spacing of the nZVI is increased, the material property is changed, and the removal efficiency of the nZVI to pollutants is further improved.

The invention relates to the technical field of lithium battery materials, and particularly discloses a spherical silicon-carbon negative electrode material and a preparation method and application thereof, and the spherical silicon-carbon negative electrode material comprises an inner core and a coating layer coating the inner core; the inner core comprises porous hard carbon doped with nitrogen element and a carbon layer coated outside the porous hard carbon, and silicon nanoparticles are deposited in the porous hard carbon; and the coating layer is a trimethyl aluminum functionalized polyethylene oxide cross-linked network coating layer. The spherical silicon-carbon negative electrode material provided by the invention is coated by the methylaluminum functionalized polyethylene oxide cross-linked network, the coating layer can provide a transmission channel for ions, promote the transmission of the ions and facilitate the enhancement of the lithium storage performance of the negative electrode material, and the high-strength three-dimensional network structure can effectively inhibit the volume expansion of the silicon-carbon negative electrode material, so that the lithium storage performance of the negative electrode material is improved. And the particles are prevented from cracking or powdering.

An anode material, including a matrix material, and the matrix material comprises carbon-doped silicon monoxide, and a content of the carbon ranges from 0.5% to 10% based on a total mass of the carbon and silicon monoxide. The anode material can significantly improve the cycle performance of an electrochemical device at room temperature and high temperature.

The invention belongs to the technical field of photocatalytic materials, and particularly discloses a phosphate radical and carbon doped Z-type photocatalytic material and a preparation method and application thereof.The preparation method comprises the following steps that LCN is prepared, specifically, Chinese redbud tree dead leaf powder and urea are fully mixed and then placed in a muffle furnace to be calcined, and LCN is obtained; the preparation of LCN / Ag3PO4 comprises the following steps: putting LCN into ultrapure water, adding silver nitrate, dropwise adding a Na3PO4 solution, stirring in a dark place, carrying out suction filtration and washing on the material, and finally carrying out freeze drying and collection to obtain the LCN / Ag3PO4. According to the phosphate radical and carbon doped Z-type photocatalytic material as well as the preparation method and the application thereof, ordered transmission of electrons on the interface of the Z-type composite material is induced through dual driving force formed by a carbon intermediate energy level and PO4 < 3->, so that the migration and separation efficiency of generated carriers can be remarkably improved, and the photocatalytic performance of the photocatalytic material is improved. And a certain theoretical support and experimental basis are provided for preparing a high-efficiency heterojunction photocatalytic material.

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

The invention discloses a carbon-doped carbon nitride nanotube as well as a preparation method and application thereof in photocatalytic reaction, and belongs to the technical field of inorganic photocatalytic nano materials. Comprising the following steps: roasting urea, melamine and 2, 4, 6-triaminopyridine under protective gas; adding the carbon-doped carbon nitride nanotube, 5-hydroxymethylfurfural and chloroplatinic acid hexahydrate into the deionized water; photocatalytic hydrogen evolution is started to cooperate with selective oxidation reaction of 5-hydroxymethylfurfural. The carbon-doped carbon nitride prepared by the preparation method disclosed by the invention is in a nanotube shape; and the catalyst can be effectively applied to solar photocatalytic hydrogen evolution to cooperate with selective oxidation of 5-hydroxymethylfurfural to generate 2, 5-diformyl furan. The invention mainly solves the problems that the value-added reaction cooperated with the hydrogen production process cannot be realized and the overall economic value cannot be improved in the traditional hydrogen production means. The method is an effective, practical and simple method, is suitable for laboratory preparation and industrial production, and has huge development space and application prospect.

A carbon-doped sodium iron aluminum titanium sulfate positive electrode material and a preparation method therefor. The carbon-doped sodium iron aluminum titanium sulfate positive electrode material comprises a carbon material and sodium iron aluminum titanium sulfate modified by the carbon material in situ. The general formula of sodium iron aluminum titanium sulfate is NaxFeyAlzTi1-y-z(SO4)m. Compared with single-ion doping, aluminum-titanium double-ion doping and the in-situ modification with the carbon material can produce a synergistic effect, thereby comprehensively improving the performance of the positive electrode material. Compared with the operations of directly ball milling raw materials and then calcining same, the preparation method, in which spray drying is mainly used for preparing a precursor, achieves more uniform distribution of various elements, is beneficial for obtaining a spherical carbon-doped sodium iron aluminum titanium sulfate positive electrode material, and can further improve the performance of the positive electrode material. The preparation method is simple in terms of technological process and easy to industrialize.

The present invention relates to the technical field of activated carbon, and discloses a surface modification method for biomass supercapacitor activated carbon, comprising the following steps: (1) spraying an aqueous solution containing a carbon and nitrogen source dopant onto the surface of the biomass supercapacitor activated carbon to achieve complete wetting, wherein the carbon and nitrogen source dopant is glucosamine; (2) performing hydrothermal carbonization at 120-300°C under an inert atmosphere, and then drying; thereafter, performing heat treatment at 400-500°C under an inert atmosphere; (3) performing an activation reaction under an atmosphere of CO2, water vapor, or a mixture of CO2 and water vapor. By doping the activated carbon with a carbon and nitrogen source dopant and simultaneously performing hydrothermal carbonization, the surface functional groups of the biomass activated carbon are removed, carbon doping repairs the defect sites in its structure, and structural doping is achieved. Nitrogen doping can cause less lattice distortion of the carbon material, thereby improving the conductivity and cycle stability of the capacitive carbon.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

The invention belongs to the technical field of ceramic materials, and particularly relates to a ceramic dielectric material capable of reducing the sintering temperature of an MLCC and a preparation method of the ceramic dielectric material. The ceramic dielectric material capable of reducing the sintering temperature of the MLCC is prepared by modifying the main crystalline phase magnesium titanate and introducing the components such as the carbon-doped titanium dioxide, the zirconium-containing strontium titanate, the yttrium-modified aluminum oxide and the lanthanum oxide composite material, the multiple components have a synergistic effect, the dielectric loss of the ceramic dielectric material is reduced, a good temperature coefficient is obtained, and the sintering temperature of the MLCC is reduced. And the sintering temperature of the MLCC is reduced through the high specific surface area.

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conductive material of a lowest of the conductive tiers. Insulating material of the insulative tier that is immediately-directly above the lowest conductive tier is directly against a top of the conductive material of the lowest conductive tier. The insulating material comprises at least one of aluminum oxide, hafnium oxide, zirconium oxide, and carbon-doped insulative material. Other embodiments, including method, are disclosed.

Method comprising: Depositing a dummy gate (70, 76) over and along sidewalls of a fin (36, 56) extending upwardly from a semiconductor substrate (32, 50); Forming a first gate spacer (80) along a sidewall of the dummy gate (70, 76); plasma doping the first gate spacer (80) with carbon to form a carbon-doped gate spacer (80B); Forming a source / drain region (42, 44, 82, 84) adjacent to a channel region (108, 112) of the fin (36, 56); and Diffusing carbon from the carbon-doped gate spacer (80B) into a first region of the fin (36, 56) to provide a first carbon-doped region (106, 110), the first carbon-doped region (106, 110) being disposed between at least a portion of the source / drain region (42, 44, 82, 84) and the channel region (108, 112) of the fin (36, 56); wherein forming the source / drain region (42, 44, 82, 84) comprises etching a second portion of the rib (36, 56) to provide a recess (102, 104) adjacent to the first portion of the rib (36, 56), the method further comprising plasma doping the recess (102, 104) with carbon to form a second carbon-doped region (107, 111) along sidewalls and a bottom surface of the recess (102, 104).

The invention discloses a carbon-doped molybdenum-based MOF (Metal Organic Framework) derived porous MRI (Magnetic Resonance Imaging) probe as well as a preparation method and anti-infection application thereof, and belongs to the technical field of nano medicines. According to the scheme, the method comprises the steps that a copper-molybdenum-based precursor is subjected to high-temperature sintering in an inert atmosphere, then NH3 is introduced, heat preservation is continued, a nitridation reaction is promoted, and a carbon-doped MoN MOF material is prepared; and immersing the material into a gadolinium salt solution, stirring, centrifuging, washing and drying to obtain the gadolinium ion-loaded porous MRI probe. According to the invention, efficient loading and stable fixation of gadolinium ions are realized, and the MRI imaging contrast ratio is improved while the biotoxicity risk is reduced. The porous skeleton structure is combined with the carbon doping design, so that the structural stability of the material in a biological environment is enhanced, and the performance maintenance of the probe during long-term use in vivo is ensured. The conductive network formed by the nitridation reaction further optimizes the magnetic response characteristic, and provides a basis for high-sensitivity imaging.

An electrode which includes nanoparticles of a carbon-doped tin oxide of formula C—SnO2-x where x=is from 0.001 to 0.1, having surface oxygen vacancies. The electrode includes a fluorine-doped tin oxide substrate. A film of the nanoparticles is present on at least one surface of the fluorine-doped tin oxide substrate. The surface oxygen vacancies correspond to an O 1s peak shift of 0.5-2 eV in the X-ray photoelectron spectroscopy (XPS) for C—SnO2-x compared to C—SnO2 without surface oxygen vacancies.

The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

The invention discloses a GaN HEMT epitaxial structure with a special high-resistance layer, the epitaxial structure is provided with the special high-resistance layer between a transition layer and a barrier layer, the special high-resistance layer comprises at least one high-resistance layer and at least one delta-doped layer which are sequentially and alternately stacked, the carbon doping concentration of the delta-doped layer is higher than that of the high-resistance layer, and the delta-doped layer is arranged between the transition layer and the barrier layer. The delta doping layer can optimize the electric field distribution so as to effectively improve the breakdown voltage of the HEMT epitaxial structure and further improve the voltage withstanding performance of the HEMT device.

The invention discloses a preparation method of a nitrogen-carbon-doped phosphating bimetal MOF derivative composite catalyst, and belongs to the technical field of hydrogen production through water electrolysis. According to the method, the CoP-coated NiP / NC composite structure is constructed through the steps of bimetal MOF precursor preparation, inert atmosphere pyrolysis, SiO2 template etching, low-temperature phosphorization, acid purification and the like. The catalyst has a nitrogen-phosphorus co-doped conductive network and a mesoporous-macroporous hierarchical structure, and shows excellent HER / OER activity and long cycle life in acidic, neutral and alkaline environments, and the cost is only 1 / 60 of that of commercial Pt / C. The problems that a traditional catalyst is high in cost, poor in stability and narrow in pH application range are solved through the bimetallic synergistic effect, the hierarchical pore structure and the heteroatom doping strategy of the catalyst, and the catalyst is suitable for a full-pH-range water electrolysis hydrogen production scene, can be mass-produced through a continuous tube furnace and has industrial application potential.

An assembly and method of use are herein disclosed. The method comprises coupling an antenna and an electromagnetic wave via a passive waveguide having a cross-section dimension, the passive waveguide carrying the electromagnetic wave having a carrier frequency in a range of 500 GHz to 10 THz, the electromagnetic wave having a wavelength, the cross-section dimension of the passive waveguide in a range of at least 4 wavelengths to 50 wavelengths; and positioning an electromagnetic absorber around the antenna.

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a first vertical stack comprising vertically-alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. A second vertical stack is aside the first vertical stack. The second vertical stack comprises insulative tiers collectively comprising at least two different compositions relative individual of the insulative tiers. Individual of the at least two different compositions comprise silicon nitride. One of the individual different compositions comprise carbon-doped silicon nitride having at least 0.5 atomic percent more carbon than atomic percent of carbon, if any, in the silicon nitride of another of the individual different compositions. Other embodiments, including method, are disclosed.

This invention relates to a device based on a porous carbon-doped electrode and its fabrication method, belonging to the field of optical communication technology. The device provided by this invention sequentially comprises a conductive substrate, an electron transport layer, a perovskite layer, a hole transport layer, and a porous carbon-doped electrode; the porous carbon-doped electrode is a porous carbon electrode doped with a conductive metal, at least one of Ag, Cu, Al, and Au. The device fabricated using the specific method of this invention can solve the problems of small bandwidth and slow PD response speed of existing perovskite devices. Simultaneously, the device, with its high transmission speed and wide transmission bandwidth, can achieve stable and complete signal transmission at higher frequencies in the field of optical communication, and has high application value.

The invention provides an in-situ carbon-doped modified lithium ferrous silicate preparation method which comprises the following steps: S1, preparing phenolic resin / silicon dioxide composite hollow spheres by adopting resorcinol, formaldehyde and a silicon source, then adding an iron source and a lithium source for reaction, and synthesizing by adopting a hydrothermal method to obtain a modified lithium ferrous silicate precursor; and S2, calcining the modified lithium ferrous silicate precursor prepared in S1 in an inert gas atmosphere to obtain the in-situ carbon-doped modified lithium ferrous silicate material. According to the method, the phenolic resin / silicon dioxide composite hollow sphere precursor is prepared, a stable Si-C bond is formed in the precursor, and the in-situ carbon-doped modified lithium ferrous silicate material is prepared by taking the Si-C bond as a silicon source, so that compared with heteroatom-doped carbon layer modification, the method disclosed by the invention has the advantages that side reactions can be reduced, breakage of a carbon layer is avoided, and the service life of the lithium ferrous silicate material is prolonged. Modification is more uniform, the preparation process is simple, and the cost is lower.

The invention discloses a method for degrading tetracycline hydrochloride in water by using a carbon-doped 1T / 2H mixed-phase molybdenum disulfide catalyst. The method comprises the following steps: (1) preparing the carbon-doped 1T / 2H mixed-phase molybdenum disulfide catalyst; and (2) tetracycline hydrochloride degradation. The carbon-doped 1T / 2H mixed-phase molybdenum disulfide catalyst prepared by a one-step hydrothermal method is high in catalytic efficiency and good in stability, the preparation method is simple, application of a peroxymonosulfate advanced oxidation technology in the field of tetracycline hydrochloride degradation wastewater treatment can be further promoted, the market is huge, and the prospect is considerable.

The present invention is a silicene layer-containing silicon substrate and a method for producing the same, the silicene layer-containing silicon substrate being characterized by comprising a silicene layer on a silicon substrate and a carbon-doped silicon layer on the silicene layer. Thus, provided are: a silicene layer-containing silicon substrate in which oxidation of the silicene layer is suppressed; and a method for producing the same.

The semiconductor device and electronic device of the present disclosure include: a substrate; a nucleation layer located on one side of the substrate; a channel layer located on the side of the nucleation layer away from the substrate; a barrier layer located on the side of the channel layer away from the nucleation layer; a buffer layer located between the nucleation layer and the channel layer, the buffer layer includes a doped superlattice layer, and the doped superlattice layer includes a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.

The invention relates to an electrical connector (1), especially an electrical plug connector, comprising a connecting part (1a) and a coupling part (1b) which each have a metallic contact region (2, 2'), wherein the connecting part (1a) is electrically conductively connectable to the coupling part (1b) via the metallic contact regions (2, 2'), and wherein at least one of the metallic contact regions (2, 2') at least partially comprises a layer system (3) applied by a PVD process. The layer system (3) comprises a first layer (3a) of titanium or chromium arranged in the metallic contact region (2, 2') and an at least one second layer (3b) arranged on the first layer (3a) and formed either from carbon-doped titanium and / or chromium or alternatively formed from a carbide comprising titanium carbide and / or chromium carbide, and at least one third layer (3c) arranged on the at least one second layer (3b) and composed of a hydrogen-free tetrahedral amorphous carbon having an sp3 content of greater than 50% as bonding type, undoped or doped with at least one element from the group comprising copper, tungsten, molybdenum, chromium, silver, titanium, iridium, gold, silicon in a concentration in the range from 2 to 30 at%.

Embodiments of the present disclosure generally relate to epitaxial film stacks and vapor deposition processes for preparing the epitaxial film stacks. In one or more embodiments, a carbon-doped silicon-germanium and silicon mini-stack is produced with relatively low defects or crystal imperfections. A multi-layered epitaxial stack containing a plurality of the carbon-doped silicon-germanium and silicon mini-stacks is deposited on a substrate. Each multi-layered epitaxial stack contains a carbon-doped silicon germanium stack and a silicon film. The carbon-doped silicon germanium stack contains a carbon-silicon-germanium layer disposed between a first silicon-germanium layer and a second silicon-germanium layer. The silicon film contains the silicon bulk layer disposed on the silicon seed layer. In some embodiments, a method for fabricating the epitaxial film stack includes sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form the carbon-doped silicon-germanium and silicon mini-stack during a deposition cycle.