Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

247 results about "Carbon doped" patented technology

SGT MOSFET made of Low-k material and preparation method of SGT MOSFET

InactiveCN119421442AReduce capacitive effectReduce conduction lossCapacitanceMOSFET
According to the SGT MOSFET of the Low-k material and the preparation method of the SGT MOSFET, a gate insulating layer of the SGT MOSFET is deposited by adopting the Low-k material based on carbon-doped silicon oxide, and an oxide layer on the side wall of a shielding gate adopts an ONO structure, so that on one hand, the capacitance effect of a device can be reduced through the Low-k material under the condition that the physical thickness of the insulating layer is kept unchanged and electric leakage is not influenced, and the performance of the device is improved; the performance of the device is improved; and on the other hand, the compactness of the silicon nitride layer is high, and the side wall and the bottom of the shield gate polycrystalline silicon are protected by the silicon nitride layer, so that the on resistance of the device is further reduced and the conduction loss of the device is reduced by improving the doping concentration of the epitaxial layer on the basis of not reducing the breakdown voltage. Meanwhile, by controlling the depth of the oxide layer and the silicon nitride layer which are etched on the side wall of the groove, the silicon nitride layer is far away from the grid polycrystalline silicon, and the reliability of the device is improved.
Owner:XIAN LONTEN RENEWABLE ENERGY TECH

Carbon-doped titanium dioxide nanotube-molybdenum disulfide energy-storage antibacterial material and preparation method thereof

The invention discloses a carbon-doped titanium dioxide nanotube-molybdenum disulfide energy-storage antibacterial material and a preparation method thereof. The preparation method comprises the following steps: carrying out primary anodic oxidation on a clean titanium foil in a mixed electrolyte of ethylene glycol, water and ammonium fluoride; after ultrasonic treatment is carried out in a hydrochloric acid solution for set time, secondary anodic oxidation is carried out, and the mixed electrolyte of the secondary anodic oxidation is the same as that of the primary anodic oxidation; annealing the titanium foil subjected to anodic oxidation twice in an argon atmosphere, putting an annealed sample into a mixed solution of sodium molybdate, a sulfur source and glucose, and carrying out hydrothermal treatment; and the titanium foil subjected to hydro-thermal treatment is cleaned and dried, and the carbon-doped titanium dioxide titanium foil with the surface covered with molybdenum disulfide is obtained. The MoS2-coated carbon-doped titanium dioxide nanotube (TNT-C-atMoS2) with high biocompatibility developed by the invention has a synergistic effect of charge antibiosis and chemical sterilization, so that the problem of intractable biological fouling of a titanium-based metal material in ocean engineering equipment is effectively solved.
Owner:SHANDONG UNIV

Triazine / heptazine homojunction structure carbon-doped carbon nitride photocatalyst as well as preparation method and application thereof

The invention provides a preparation method of a triazine / heptazine homojunction structure carbon-doped carbon nitride photocatalyst, which comprises the following specific steps: (1) placing mixed powder of melamine and 2, 4, 6-triaminopyrimidine in air, heating to 300-500 DEG C, and calcining for 2-6 hours to form a mixture of carbon-doped melamine and oligomer thereof; (2) placing the mixture obtained in the step (1) in water at 60-70 DEG C, performing ultrasonic dispersion, then slowly cooling to room temperature, oscillating for 12-36 hours, removing moisture through rotary evaporation, and further drying to obtain a solid supramolecular precursor; and (3) fully mixing the solid supramolecular precursor obtained in the step (2) with molten salt, calcining at 500-600 DEG C for 2-6 hours, cooling, fully washing with deionized water, removing mixed salt, separating solid residues, and drying to obtain the triazine / heptazine homojunction structure carbon-doped carbon nitride photocatalyst THCNx-t. The prepared carbon-doped carbon nitride photocatalyst is uniform in homojunction distribution, and has the characteristics of excellent photochemical properties, high photon-generated carrier separation efficiency and excellent photocatalytic benzyl alcohol selective oxidation performance.
Owner:CHINA PETROLEUM & CHEMICAL CORP

Negative pole piece as well as preparation method and application thereof

The invention relates to a negative pole piece and a preparation method and application thereof.The negative pole piece comprises a current collector and a negative active layer arranged on at least one face of the current collector in the thickness direction, the negative active layer comprises a first active layer, a second active layer and a third active layer, the first active layer is attached to the surface of the current collector, and the second active layer is attached to the surface of the current collector; the second active layer is arranged on the surface, far away from the current collector, of the first active layer, and the third active layer is arranged on the surface, far away from the first active layer, of the second active layer; the first active layer comprises carbon-coated secondary particle graphite, the second active layer comprises heteroatom-doped hard carbon, and the third active layer comprises porous carbon nanofibers. According to the lithium ion battery, the multiple active layers containing different active materials are arranged on the surface of the current collector, and meanwhile, the thickness of each active layer is regulated and the preparation process is optimized, so that the lithium ion battery containing the negative pole piece has high energy density, quick charge capacity and excellent cycle life.
Owner:JIANGSU ZENIO NEW ENERGY BATTERY TECH CO LTD

Cadmium telluride solar cell and preparation method thereof

The invention relates to a cadmium telluride solar cell and a preparation method thereof, the cadmium telluride solar cell comprises a TCO layer, a buffer layer, a window layer, a light absorption layer, a back electrode layer and a back contact layer, the back contact layer is located between the light absorption layer and the back electrode layer, and the back contact layer is made of boron or carbon doped transition metal nitride. The back contact layer made of boron or carbon doped transition metal nitride is introduced between the light absorption layer and the back electrode layer, and transition gold elements in the back contact layer can be compatible with the cadmium telluride absorption layer, so that the obstruction of a contact barrier to hole transport is reduced, the interface characteristic between the CdTe absorption layer and the back contact layer is optimized, and the light emitting efficiency is improved. According to the present invention, the cadmium telluride absorption layer can form the good ohmic contact with the cadmium telluride absorption layer, such that the effect of the back field buffer layer can be provided so as to reflect the photo-induced electrons on the back surface in the cadmium telluride to the PN junction, such that the recombination of the electrons on the back surface can be substantially reduced, and the carrier collection efficiency of the cell can be improved so as to improve the open-circuit voltage and the conversion efficiency of the cell;
Owner:ZHONGMAO LVNENG TECH (XIAN) CO LTD

Light emitting diode

The present invention relates to a light emitting diode (LED) which comprises multiple point-like conductive electrodes, a dielectric layer, and an epitaxial composite layer. The dielectric layer is disposed around each point-like conductive electrode, and the epitaxial composite layer is disposed both on the point-like conductive electrodes and the dielectric layer. Each point-like conductive electrode includes an ohmic-contact metal layer and a carbon-doped gallium arsenide epitaxial layer. The carbon-doped gallium arsenide epitaxial layer is disposed on the ohmic-contact metal layer and electrically connected to the epitaxial composite layer.
Owner:TAIWAN ASIA SEMICONDUCTOR CORPORATION

Carbon-doped non-noble metal high-entropy alloy hydrogen evolution catalytic electrode and preparation method thereof

The invention discloses a carbon-doped non-noble metal high-entropy alloy hydrogen evolution catalytic electrode and a preparation method thereof, and belongs to the technical field of water electrolysis hydrogen production. The preparation method comprises the following steps: (1) blending four metal powder of Fe, Co, Ni and Mo with carbon powder, ball-milling, standing and passivating to obtain mixed powder; and (2) carrying out compression molding on the mixed powder obtained in the step (1), and sintering. The preparation method is simple in process, the hydrogen evolution catalytic electrode can be obtained only through two steps of mechanical alloying and pressureless sintering, operation is easy and convenient, large-scale preparation can be achieved, and industrialization is easy; through a carbon doping mode, a transition metal carbide-molybdenum carbide and quaternary high-entropy alloy synergistic effect is formed in the electrode material, the free energy of a hydrogen intermediate is obviously reduced, the mass transfer process in electrochemical reaction is facilitated, and the electrode material has excellent hydrogen evolution catalytic performance and is suitable for water electrolysis hydrogen evolution catalytic reaction in an alkaline environment; the hydrogen production efficiency can be improved, and the energy consumption is reduced.
Owner:SOUTHWEST JIAOTONG UNIV

Preparation method of hard carbon doped with pre-oxidized heavy organic matter in situ

The invention relates to the technical field of sodium ion battery negative electrode materials, and discloses an in-situ doped pre-oxidized heavy organic matter hard carbon preparation method which comprises the following steps: step 1, low-temperature oxidation: obtaining a pre-oxidized carbon material after heat treatment is finished; step 2, element doping: obtaining a hard carbon precursor doped with a sulfur element; step 3, low-temperature curing: obtaining a cured sulfur element doped pre-oxidized heavy organic matter hard carbon precursor; step 4, high-temperature carbonization: obtaining a sulfur element doped pre-oxidized heavy organic matter hard carbon precursor material with a stable structure; the medium-temperature coal pitch is oxidized at low temperature to obtain the pre-oxidized carbon material, then the sulfur element doped material reacts with the medium-temperature coal pitch at low temperature, hydrogen ions of the medium-temperature coal pitch are substituted by sulfur to form relatively stable chemical bonds, and the continuity of the chemical bonds is beneficial to enhancing the stability of the structure; sulfur atom doping not only provides active sites and increases sodium storage capacity, but also expands interlayer spacing and improves rate capability.
Owner:SHENZHEN QINGYAN HAOLONG NEW ENERGY TECH CO LTD

Carbon-doped nano zero-valent iron as well as preparation method and application thereof

The invention belongs to the technical field of water treatment, and particularly relates to a method for regulating and controlling a nanoscale zero-valent iron shell structure to enhance the reaction activity of the nanoscale zero-valent iron shell structure. The carbon-doped nano zero-valent iron is of a core-shell structure; the carbon-doped nanoscale zero-valent iron comprises a nanoscale zero-valent iron core with carbon gradient doping and an iron carbide shell layer located on the surface of the nanoscale zero-valent iron core. By means of collision between grinding balls and material (Fe and C) particles, deformation and crushing of the ground material particles are achieved through friction force, shearing force, tension and the like, an oxidation shell layer of nanoscale zero-valent iron is broken, Fe < 0 > is exposed on the surface of the material and further doped with activated carbon to form an iron carbide shell layer to construct Fe-C double-active sites, the reaction activity of the material is improved, and the service life of the material is prolonged. The reducibility and electron transfer capability of the nZVI are effectively improved, meanwhile, after the nZVI is subjected to the action of mechanical force, the lattice spacing of the nZVI is increased, the material property is changed, and the removal efficiency of the nZVI to pollutants is further improved.
Owner:SHANDONG UNIV OF SCI & TECH

Carbon-doped boron nitride for effectively adsorbing heavy metals in flue gas and preparation method of carbon-doped boron nitride

The invention provides carbon-doped boron nitride for effectively adsorbing heavy metals in flue gas and a preparation method of the carbon-doped boron nitride, and belongs to the technical field of combined control of various atmospheric pollutants. According to the carbon-doped boron nitride, more carbon atoms are introduced into a boron nitride structure through carbon doping, the carbon atoms replace part of boron atoms, and the original structure of the boron nitride is changed; compared with boron nitride, the carbon-doped boron nitride has the advantages that the atom proportion of carbon atoms in the carbon-doped boron nitride is increased by 2.92%-58.22%, heavy metals in the flue gas are removed through the synergistic effect of physical adsorption and chemical adsorption, and simultaneous adsorption of more than one heavy metal in the flue gas is realized after 5 minutes. Compared with activated carbon as a heavy metal adsorbent, the preparation method is simple, the blank of adsorption capacity in high-temperature flue gas is filled, heavy metal substances such as Cd, Pd, Zn and Cu can be adsorbed at the same time, and the adsorbent is successfully applied to adsorption of heavy metal ions in the high-temperature flue gas.
Owner:SHENYANG AEROSPACE UNIVERSITY

Preparation method for producing anhydrous formaldehyde catalyst

The invention belongs to the field of chemical technology innovation, and relates to a preparation method for producing an anhydrous formaldehyde catalyst. The catalyst is composed of transition metal and non-metal nitrogen-carbon doped molecular sieves, acidic sites and charge distribution of the molecular sieves are regulated and controlled through nitrogen-carbon doping, meanwhile, metal agglomeration in the reaction process is slowed down through formed metal-N-C bonds, the stability of the catalyst is improved, and the service life of the catalyst is prolonged. The catalyst shows excellent methanol anaerobic dehydrogenation catalytic activity within the temperature range of 400-700 DEG C, the methanol conversion rate reaches 90-99%, meanwhile, the formaldehyde yield reaches 57-67%, and the catalytic performance is kept stable within 70 h.
Owner:HUBEI XINGFA CHEM GRP CO LTD +1

Spherical silicon-carbon negative electrode material and preparation method and application thereof

The invention relates to the technical field of lithium battery materials, and particularly discloses a spherical silicon-carbon negative electrode material and a preparation method and application thereof, and the spherical silicon-carbon negative electrode material comprises an inner core and a coating layer coating the inner core; the inner core comprises porous hard carbon doped with nitrogen element and a carbon layer coated outside the porous hard carbon, and silicon nanoparticles are deposited in the porous hard carbon; and the coating layer is a trimethyl aluminum functionalized polyethylene oxide cross-linked network coating layer. The spherical silicon-carbon negative electrode material provided by the invention is coated by the methylaluminum functionalized polyethylene oxide cross-linked network, the coating layer can provide a transmission channel for ions, promote the transmission of the ions and facilitate the enhancement of the lithium storage performance of the negative electrode material, and the high-strength three-dimensional network structure can effectively inhibit the volume expansion of the silicon-carbon negative electrode material, so that the lithium storage performance of the negative electrode material is improved. And the particles are prevented from cracking or powdering.
Owner:HEFEI GUOXUAN HIGH TECH POWER ENERGY CO LTD CO LTD

Anode material and electrochemical device including the same, and electronic device

An anode material, including a matrix material, and the matrix material comprises carbon-doped silicon monoxide, and a content of the carbon ranges from 0.5% to 10% based on a total mass of the carbon and silicon monoxide. The anode material can significantly improve the cycle performance of an electrochemical device at room temperature and high temperature.
Owner:NINGDE AMPEREX TECHNOLOGY LTD

Back contact battery capable of reducing LID, preparation method thereof and battery assembly

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of reducing LID, a preparation method of the back contact cell and a cell assembly. The back contact cell capable of reducing the LID comprises a silicon wafer, and a light-receiving surface passivation layer and an anti-reflection layer which are sequentially arranged on a light-receiving surface of the silicon wafer, and the light-receiving surface passivation layer comprises a first tunneling oxide layer and a hydrogen-doped and carbon-doped silicon layer which are sequentially arranged; the silicon layer is amorphous silicon or polycrystalline silicon; the anti-reflection layer comprises a hydrogen-doped silicon carbide film layer, the hydrogen-doped silicon carbide film layer comprises a first hydrogen-doped silicon carbide layer and a second hydrogen-doped silicon carbide layer which are sequentially arranged, the carbon doping concentration of the first hydrogen-doped silicon carbide layer is smaller than that of the second hydrogen-doped silicon carbide layer, the thickness of the first hydrogen-doped silicon carbide layer is 10-30 nm, and the thickness of the second hydrogen-doped silicon carbide layer is 50-100 nm. According to the invention, the passivation effect, the optical effect and the LID anti-attenuation capability can be considered, the LID is reduced, the battery stability is improved, and the battery reliability is improved.
Owner:GOLDEN SOLAR (QUANZHOU) NEW ENERGY TECH CO LTD

Phosphate radical and carbon doped Z-type photocatalytic material as well as preparation method and application thereof

The invention belongs to the technical field of photocatalytic materials, and particularly discloses a phosphate radical and carbon doped Z-type photocatalytic material and a preparation method and application thereof.The preparation method comprises the following steps that LCN is prepared, specifically, Chinese redbud tree dead leaf powder and urea are fully mixed and then placed in a muffle furnace to be calcined, and LCN is obtained; the preparation of LCN / Ag3PO4 comprises the following steps: putting LCN into ultrapure water, adding silver nitrate, dropwise adding a Na3PO4 solution, stirring in a dark place, carrying out suction filtration and washing on the material, and finally carrying out freeze drying and collection to obtain the LCN / Ag3PO4. According to the phosphate radical and carbon doped Z-type photocatalytic material as well as the preparation method and the application thereof, ordered transmission of electrons on the interface of the Z-type composite material is induced through dual driving force formed by a carbon intermediate energy level and PO4 < 3->, so that the migration and separation efficiency of generated carriers can be remarkably improved, and the photocatalytic performance of the photocatalytic material is improved. And a certain theoretical support and experimental basis are provided for preparing a high-efficiency heterojunction photocatalytic material.
Owner:GUANGZHOU UNIVERSITY

A thermochemical process for synthesizing a carbon nanomaterial

PCT designated stage expiredWO2025003727A1GrapheneDoped grapheneCarbon graphite
A new process for synthesizing a carbon nanomaterial by thermochemically reducing an oxygenic carbon source under an ambient pressure, and an onset temperature in the range of 50 - 150 °C in the presence of a hydrogen abstractor, an ionic salt, and a solvent. Said carbon nanomaterial is selected from the group of a nanocrystalline carbon with a 1D, 2D, or 3D structure, a graphitic nanocarbon, an N-doped graphitic nanocarbon, an amorphous carbon, graphene quantum dots, N-doped graphene quantum dots, and a combination thereof. The reaction time for synthesizing the carbon nanomaterial is no longer than 10 minutes.
Owner:CRYSTALLYTE CO LTD

Optically quenchable carbon-doped gallium nitride photoconductive semiconductor switches

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.
Owner:LAWRENCE LIVERMORE NAT SECURITY LLC

Carbon-doped carbon nitride nanotube, preparation method thereof and application of carbon-doped carbon nitride nanotube in photocatalytic reaction

The invention discloses a carbon-doped carbon nitride nanotube as well as a preparation method and application thereof in photocatalytic reaction, and belongs to the technical field of inorganic photocatalytic nano materials. Comprising the following steps: roasting urea, melamine and 2, 4, 6-triaminopyridine under protective gas; adding the carbon-doped carbon nitride nanotube, 5-hydroxymethylfurfural and chloroplatinic acid hexahydrate into the deionized water; photocatalytic hydrogen evolution is started to cooperate with selective oxidation reaction of 5-hydroxymethylfurfural. The carbon-doped carbon nitride prepared by the preparation method disclosed by the invention is in a nanotube shape; and the catalyst can be effectively applied to solar photocatalytic hydrogen evolution to cooperate with selective oxidation of 5-hydroxymethylfurfural to generate 2, 5-diformyl furan. The invention mainly solves the problems that the value-added reaction cooperated with the hydrogen production process cannot be realized and the overall economic value cannot be improved in the traditional hydrogen production means. The method is an effective, practical and simple method, is suitable for laboratory preparation and industrial production, and has huge development space and application prospect.
Owner:NANJING FORESTRY UNIV

Carbon-doped sodium iron aluminum titanium sulfate positive electrode material and preparation method therefor

PCT designated stage expiredWO2025077148A1Cell electrodesIron sulfatePhysical chemistry
A carbon-doped sodium iron aluminum titanium sulfate positive electrode material and a preparation method therefor. The carbon-doped sodium iron aluminum titanium sulfate positive electrode material comprises a carbon material and sodium iron aluminum titanium sulfate modified by the carbon material in situ. The general formula of sodium iron aluminum titanium sulfate is NaxFeyAlzTi1-y-z(SO4)m. Compared with single-ion doping, aluminum-titanium double-ion doping and the in-situ modification with the carbon material can produce a synergistic effect, thereby comprehensively improving the performance of the positive electrode material. Compared with the operations of directly ball milling raw materials and then calcining same, the preparation method, in which spray drying is mainly used for preparing a precursor, achieves more uniform distribution of various elements, is beneficial for obtaining a spherical carbon-doped sodium iron aluminum titanium sulfate positive electrode material, and can further improve the performance of the positive electrode material. The preparation method is simple in terms of technological process and easy to industrialize.
Owner:JINGMEN GEM NEW MATERIAL CO LTD +1

A method for surface modification of biomass supercapacitor activated carbon

The present invention relates to the technical field of activated carbon, and discloses a surface modification method for biomass supercapacitor activated carbon, comprising the following steps: (1) spraying an aqueous solution containing a carbon and nitrogen source dopant onto the surface of the biomass supercapacitor activated carbon to achieve complete wetting, wherein the carbon and nitrogen source dopant is glucosamine; (2) performing hydrothermal carbonization at 120-300°C under an inert atmosphere, and then drying; thereafter, performing heat treatment at 400-500°C under an inert atmosphere; (3) performing an activation reaction under an atmosphere of CO2, water vapor, or a mixture of CO2 and water vapor. By doping the activated carbon with a carbon and nitrogen source dopant and simultaneously performing hydrothermal carbonization, the surface functional groups of the biomass activated carbon are removed, carbon doping repairs the defect sites in its structure, and structural doping is achieved. Nitrogen doping can cause less lattice distortion of the carbon material, thereby improving the conductivity and cycle stability of the capacitive carbon.
Owner:ZHEJIANG BAIMA LAKE LABORATORY CO LTD

Multi-layered epitaxial stack formed in a presence of a higher order silicon precursor

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.
Owner:APPLIED MATERIALS INC

Preparation method of carbon-doped carbon nitride material as well as product and application of carbon-doped carbon nitride material

The invention provides a preparation method of a carbon-doped carbon nitride material, which is characterized by comprising the following specific steps: (1) prepolymerization: mixing melamine and 2, 4, 6-triaminopyrimidine powder according to a certain proportion, heating to 400-450 DEG C in a protective gas atmosphere, and calcining to form prepolymer carbon-doped melem; (2) supramolecular modification: taking 0.5 g of carbon-doped melem obtained in the step (1), adding the carbon-doped melem into 25 mL of a hydrochloric acid aqueous solution with a certain concentration, carrying out ultrasonic oscillation dispersion, placing the mixture in a fuming cupboard to naturally evaporate water and excessive hydrochloric acid, and further drying and grinding the mixture to obtain a hydrogen-halogen bond connected carbon-doped heptazine supramolecular precursor; and (3) preparing carbon nitride through high-temperature calcination: calcining the hydrogen-halogen bond connected carbon-doped heptazine supermolecule precursor obtained in the step (2) at 500-600 DEG C for 2-6 hours, cooling, crushing and grinding to obtain the carbon-doped carbon nitride photocatalytic material.According to the method provided by the invention, a prepolymer is prepared firstly, has relatively high thermal stability and a heptazine skeleton structure which is the same as g-C3N4, and is used for preparing the carbon nitride photocatalytic material. The preparation method comprises the following steps: firstly, carrying out supermolecule modification through hydrochloric acid, and finally, carrying out high-temperature calcination, so that rich pore structures can be obtained, the absorption capacity of the material to sunlight and the adsorption capacity of the material to reactant molecules can be improved, the framework structure integrity of the material can also be improved, an unblocked transmission channel is provided for photon-generated carriers, and the photocatalytic efficiency is improved.
Owner:CHINA PETROLEUM & CHEMICAL CORP

Crystalline silicon photovoltaic cell with novel tunneling passivation layer and production equipment thereof

The invention discloses a crystalline silicon photovoltaic cell with a novel tunneling passivation layer and production equipment of the crystalline silicon photovoltaic cell, and relates to the technical field of crystalline silicon photovoltaic cells. The gel film is prepared by adopting a sol-gel method, the carbon-doped silicon oxide film is prepared by adopting a gel film thermal oxidation method, and the carbon-doped silicon oxide film is clamped between the crystalline silicon substrate and the doped polycrystalline silicon film to serve as a junction region tunneling passivation layer, so that the performance of the crystalline silicon photovoltaic cell is improved. Through a unique stirring structure and a scraping cleaning function, the mixing effect of sol and the cleanliness of equipment are improved, and effective technical support is provided for production of crystalline silicon photovoltaic cells. The stirring equipment comprises a stirring kettle, a power structure is installed at the top of the stirring kettle, power is provided through a power part, a reciprocating part and a rotating part are matched to drive a stirring part in the stirring structure to slide up and down and rotate and stir in the stirring kettle, and mixing and stirring of various kinds of sol are achieved. A stirring rod capable of adjusting the stirring range is arranged in the stirring structure, and the stirring rod is subjected to abutting adjustment through a bottom rod in the upper adjusting part, so that the inner side wall of the stirring kettle is scraped and cleaned.
Owner:ANHUI MEIDALUN PHOTOVOLTAIC TECH CO LTD

Ceramic dielectric material capable of reducing sintering temperature of MLCC (multilayer ceramic capacitor) and preparation method of ceramic dielectric material

The invention belongs to the technical field of ceramic materials, and particularly relates to a ceramic dielectric material capable of reducing the sintering temperature of an MLCC and a preparation method of the ceramic dielectric material. The ceramic dielectric material capable of reducing the sintering temperature of the MLCC is prepared by modifying the main crystalline phase magnesium titanate and introducing the components such as the carbon-doped titanium dioxide, the zirconium-containing strontium titanate, the yttrium-modified aluminum oxide and the lanthanum oxide composite material, the multiple components have a synergistic effect, the dielectric loss of the ceramic dielectric material is reduced, a good temperature coefficient is obtained, and the sintering temperature of the MLCC is reduced. And the sintering temperature of the MLCC is reduced through the high specific surface area.
Owner:HANGZHOU XINGRONG TECH CO LTD

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple with conductor material of the conductor tier by conductive material of a lowest of the conductive tiers. Insulating material of the insulative tier that is immediately-directly above the lowest conductive tier is directly against a top of the conductive material of the lowest conductive tier. The insulating material comprises at least one of aluminum oxide, hafnium oxide, zirconium oxide, and carbon-doped insulative material. Other embodiments, including method, are disclosed.
Owner:MICRON TECHNOLOGY INC

High modulus carbon doped silicon oxide films for mold stack scaling solutions in advanced memory applications

Provided herein is a reduced temperature plasma enhanced chemical vapor deposition process for manufacturing a high modulus oxide thin film on a substrate. The substrate temperature used to deposit the oxide thin film is less than about 700 DEG C.
Owner:LAM RES CORP

FINFET device with carbon-doped regions under gate spacers and formation method

ActiveDE102017118199B4Carbon plasmaCondensed matter physics
Method comprising: Depositing a dummy gate (70, 76) over and along sidewalls of a fin (36, 56) extending upwardly from a semiconductor substrate (32, 50); Forming a first gate spacer (80) along a sidewall of the dummy gate (70, 76); plasma doping the first gate spacer (80) with carbon to form a carbon-doped gate spacer (80B); Forming a source / drain region (42, 44, 82, 84) adjacent to a channel region (108, 112) of the fin (36, 56); and Diffusing carbon from the carbon-doped gate spacer (80B) into a first region of the fin (36, 56) to provide a first carbon-doped region (106, 110), the first carbon-doped region (106, 110) being disposed between at least a portion of the source / drain region (42, 44, 82, 84) and the channel region (108, 112) of the fin (36, 56); wherein forming the source / drain region (42, 44, 82, 84) comprises etching a second portion of the rib (36, 56) to provide a recess (102, 104) adjacent to the first portion of the rib (36, 56), the method further comprising plasma doping the recess (102, 104) with carbon to form a second carbon-doped region (107, 111) along sidewalls and a bottom surface of the recess (102, 104).
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

Carbon-doped molybdenum-based MOF-derived porous MRI probe and preparation method and anti-infection application thereof

The invention discloses a carbon-doped molybdenum-based MOF (Metal Organic Framework) derived porous MRI (Magnetic Resonance Imaging) probe as well as a preparation method and anti-infection application thereof, and belongs to the technical field of nano medicines. According to the scheme, the method comprises the steps that a copper-molybdenum-based precursor is subjected to high-temperature sintering in an inert atmosphere, then NH3 is introduced, heat preservation is continued, a nitridation reaction is promoted, and a carbon-doped MoN MOF material is prepared; and immersing the material into a gadolinium salt solution, stirring, centrifuging, washing and drying to obtain the gadolinium ion-loaded porous MRI probe. According to the invention, efficient loading and stable fixation of gadolinium ions are realized, and the MRI imaging contrast ratio is improved while the biotoxicity risk is reduced. The porous skeleton structure is combined with the carbon doping design, so that the structural stability of the material in a biological environment is enhanced, and the performance maintenance of the probe during long-term use in vivo is ensured. The conductive network formed by the nitridation reaction further optimizes the magnetic response characteristic, and provides a basis for high-sensitivity imaging.
Owner:XUANWU HOSPITAL OF CAPITAL UNIV OF MEDICAL SCI