73results about How to "Reduce particle pollution" patented technology

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.

The invention relates to a device for filtering contaminants, such as particulates and vapor phase contaminants, from a confined environment such as electronic or optical devices susceptible to contamination (e.g. computer disk drives) by providing an improved performance recirculation filter.

A sensor system for determining a parameter of a fluid medium, e.g., an intake air mass flowing through a channel, includes at least one sensor chip situated in the channel for determining the parameter, which sensor chip is accommodated in a sensor carrier which (i) protrudes into the channel and (ii) has a leading edge situated transverse to the flow of the fluid medium. At least one vortex generator is provided, at least in the region of the leading edge, and configured for forming secondary flows in the flowing fluid medium in the region of the sensor carrier, for avoiding or reducing the entry of particles. The secondary flows extend in a plane essentially perpendicular to the main flow direction of the fluid medium, e.g., facing away from the sensor area.

An EUV reticle pod is provided. The pod includes an inner and an outer box assembly. The inner box assembly contained in the outer box assembly includes a base and a cover. The base has an upper surface and a surrounding wall. The upper surface includes a carry surface, at least one trench, and a first contacting surface. The EUV reticle is carried above the carry surface. The trench has a circular loop structure and its bottom is lower than the carry surface. The carry surface, the trench, and the first contacting surface are sequentially distributed from the center of the upper surface towards the surrounding wall. The cover has a concave for accommodating the EUV reticle and a second contacting surface for cooperating with the first contacting surface to form an air-tight seal. The trench captures and traps particles to reduce the particle contamination on the reticle.

An electrochemical deposition system having two or more electrochemical deposition modules arranged on a common platform and configured for depositing one or more metals on a substrate is described. Each electrochemical deposition module includes an anode compartment configured to contain a volume of anolyte fluid, a cathode compartment configured to contain a volume of catholyte fluid, and a membrane separating the anode compartment from the cathode compartment. Each electrochemical deposition module further includes a workpiece holder configured to hold opposing edges of a flexible workpiece between first and second leg members via a clamping mechanism, and a loader module configured to position the flexible workpiece in the workpiece holder while holding the flexible workpiece using an air cushion on each opposing planar surface of the flexible workpiece.

Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1

wherein the substituents are as defined.

The peeling of a reaction product deposition film 50 is prevented, reducing the particle contamination of a material to be treated 16 by roughening the surfaces (adhesion preventing surfaces) of an outer liner 40 and inner liner 42 both made of aluminum installed as an adhesion preventing plate inside a chamber of a plasma etching device to a surface roughness within a constant range without carrying out alumite treatment.

A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in thermal contact to the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma. The apparatus also includes a barrier window positioned between the phosphor material and a plasma, wherein the barrier window allows at least a portion of the first wavelength and the second wavelength to be transmitted, and wherein the barrier window produces a second set of non volatile byproducts that is less than the first set of non volatile byproducts when exposed to the plasma, wherein when the electromagnetic radiation is transmitted to the phosphor material through the barrier window, the temperature is determined from the decay rate of the fluorescent response.

A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at least pre-selected oxide thickness remains after back end of line processing is complete and performing the back end of line processing of the memory device.

The invention discloses an electrostatic chuck component. The electrostatic chuck component comprises an electrostatic chuck, a fixing frame and a temperature sensor. The fixing frame is mounted on the electrostatic chuck. The temperature sensor is arranged on the fixing frame and opposite to the upper surface of the electrostatic chuck, and the lower end face of the temperature sensor is at a preset distance with the upper surface of the electrostatic chuck. According to the electrostatic chuck component and by means of a non-contact temperature measuring method, the lower end face of the temperature sensor is spaced from the upper surface of the electrostatic chuck, particle pollution produced during temperature measuring is decreased, secondary pollution to the electrostatic chuck is avoided, and service life of the electrostatic chuck is prolonged; meanwhile, compared with a temperature measuring mode by a conventional handheld temperature gauge, the non-contact temperature measuring method has the advantages that the temperature sensor is fixed through the fixing frame, measuring error produced by handheld operation of an operator is avoided, and temperature measuring accuracy of the temperature sensor is improved. The invention further discloses a plasma device provided with the above electrostatic chuck component.