The invention relates to a high-intensity
focused ultrasound-assisted
laser lift-off method, and belongs to the technical field of
silicon carbide wafer lift-off. The method comprises the following steps: a, forming a modified layer: providing a
silicon carbide crystal ingot, positioning a
laser focus point F of a pulse
laser ray L at a preset depth in the
silicon carbide crystal ingot by adopting the pulse laser
ray L with the
wavelength permeable to the
silicon carbide crystal ingot, and forming the modified layer in the
silicon carbide crystal ingot by relatively moving the
silicon carbide crystal ingot and the laser focus point F; and b, a
wafer stripping step: providing a high-intensity
focused ultrasound generating device. According to the invention, the fundamental innovation of the stripping mechanism is realized, the stripping efficiency is high, the action position is accurate, and the damage is more controllable; energy is highly concentrated and precisely acted,
energy dispersion is avoided, and the stripping precision is improved;
process integration is achieved through synchronous
machining, the problems of secondary clamping, interface re-healing and the like are avoided, and efficiency and consistency are improved; the
thermal damage and the mechanical damage are obviously reduced; by adjusting the focus position, the
system can adapt to complex structures and deep modification.