27444results about "Electric discharge tubes" patented technology

The present disclosure provides a charged particle element and relates apparatus and methods. In one arrangement, the element comprises a beam manipulator configured to operate on a plurality of charged particle beams in a beam grid. The beam manipulator comprises a plurality of plates. Each plate has two surfaces and a plurality of apertures. The plates comprises at least one curved-surface plate with a curved surface. The curved surface faces a facing surface of an adjacent plate. Deflections are applied to beams by controlling a potential difference between the curved surface and the facing surface.

Embodiments of substrate supports having electrostatic chucks (ESCs) for use in substrate process chambers are provided herein. In some embodiments, a substrate support includes: an electrostatic chuck (ESC) having a top surface and a plurality of mesas extending upward from the top surface, wherein an upper surface of the plurality of mesas define a substrate support surface, wherein a total surface area of the substrate support surface is about 18 to about 40 percent a total surface area of the upper surface, and wherein the ESC includes a plurality of backside gas openings extending through the ESC; and one or more chucking electrodes disposed in the ESC.

A plasma processing method includes (a) generating plasma in a chamber of a plasma processing apparatus including a substrate support provided in the chamber and supporting a substrate placed thereon, (b) applying a voltage pulse from a bias power supply to a bias electrode of the substrate support in order to draw ions from the plasma into the substrate, and (c) repeating (b). In (c), a duration length of the voltage pulse is changed to change a potential of the substrate.

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

The invention provides a preparation method of a transmission electron microscope ultrathin sample with a cross section of an electron beam sensitive material, which comprises the following steps: selecting a specific region as a to-be-extracted sample region for the electron beam sensitive material by adopting an electron beam imaging technology; depositing a protective layer on the surface of the to-be-extracted sample area by adopting an electron beam and / or an ion beam; bombarding a to-be-extracted sample area by utilizing a high-energy ion beam, extracting an electron beam sensitive material cross section sample from the to-be-extracted sample area, and fixing the extracted sample to a metal bracket; performing pre-thinning treatment on the extracted sample by using a focused ion beam to obtain a first thinned sample of which the thickness is reduced to be less than a first thickness; and transferring the first thinned sample into a micro-beam fixed-point ion thinning system, and carrying out multi-time stepped low-energy ion beam fine thinning treatment on the first thinned sample by using inert gas ion micro-beams to obtain a second thinned sample which is clean in surface and free of a surface ion damage layer and has the thickness reduced to be less than a second thickness, and taking the second thinned sample as a transmission electron microscope ultrathin sample.

A system includes a processing chamber configured to perform a plasma process with respect to one or more substrates. The system further includes an electrostatic chuck disposed within the processing chamber. The electrostatic chuck includes one or more electrodes. The system further includes an analog filter electrically coupled to at least one electrode of the one or more electrodes. The analog filter includes an air-core coil including a first coil and a second coil disposed within the first coil. The first coil and the second coil together form an inductor.

A dielectric barrier plasma generator includes: a dielectric substrate, a high-voltage electrode provided on a first surface of the dielectric substrate, a low-voltage electrode provided to face a second surface of the dielectric substrate, a power introduction section provided at a first end of the high-voltage electrode, a gas channel formed from a first end to a second end thereof between the dielectric substrate and the low-voltage electrode to allow gas to flow from the first end of the gas channel to the second end thereof, and a blowout outlet formed at the second end of the gas channel to blow out the gas that has flown through the gas channel and plasma that has been generated in the gas channel. The dielectric substrate includes a portion having a thickness being thinner when being closer to the blowout outlet.

Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to an apparatus for processing a substrate in a plasma processing system. The apparatus generally includes: an impedance for a match circuit configured to perform impedance matching for a plasma load; a diode-based switch coupled to the impedance for the match circuit; at least one signal generator coupled to the diode-based switch and configured to bias the diode-based switch to a first position based on a first impedance generated in the plasma load; and a second position based on a second impedance generated in the plasma load and an RF signal generator configured to provide an RF signal to the plasma load.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to a method for processing a substrate in a plasma processing system. The method generally includes: sensing, via one or more sensors, one or more intermodulation or harmonic components of a signal at a node coupled to a plasma chamber; and controlling one or more signal processing devices of the plasma processing system to process the substrate based on the one or more intermodulation or harmonic components and in accordance with a frequency domain configuration identified by analyzing one or more substrate processing metrics.

A method of processing a substrate. The method including delivering, by an RF generator, an RF signal to a processing volume of a processing chamber through an RF match including a configurable impedance altering element. Measuring in real-time, an electrical characteristic of the RF signal. Determining in real-time, a target electrical characteristic based upon a comparison between a calibrated electrical characteristic value and the measured electrical characteristic, in which the calibrated electrical characteristic value is selected to achieve at least one desired plasma processing parameter result. Adjusting in real-time, a setting of the configurable impedance altering element of the RF match to achieve the target electrical characteristic and maintaining, the target electrical characteristic by controlling the setting of the configurable impedance altering element of the RF match.

Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by a metal bond layer. The substrate support assembly includes a blocking ring disposed around the metal bond layer.

High voltage connector (1,11) for an industrial power equipment configured to lead high current and withstand high voltage in particular usable for a plasma process equipment, the HV connector (1,11) is formed to fit into a corresponding plug (121) and comprises: - a plug-connecting-end (69 and an inner-end (7), - a connecting element (2), - an insulator body (3) surrounding the connecting element (2) at least partially, - the connecting element (2) having a rod shape which expands from the plug-connecting-end (6 to an inner-end (7), the connecting element (2) comprises a rod-diameter-changing-point 8, where the diameter of the connecting element (2) changes from a first rod-diameter (21) in direction to the plug-connecting-end (6) to a second rod-diameter (22) in direction to the inner-end (7), - the insulator body (3) having a shape with a hole (23), the hole (23) formed to surround the connecting element (2), the hole (23) having a hole-diameter-changing-point (9), where the hole-diameter of the hole (23) changes from a first hole-diameter (24) in direction to the plug-connecting-end (6) to a second hole-diameter (25) in direction to the inner-end (7), wherein the first hole-diameter (24) is equal to the first rod-diameter (21) and the second hole-diameter (25) is equal to the second rod-diameter (22), so that the insulator-body (3) fits tightly on the connecting element (2), and - the insulator body (3) is positioned in such a way that its hole-diameter-changing-point (9) is adjacent to the rod-diameter-changing-point (8) of the connecting element (2), so that the connecting element (2) and the insulator body (3) build a compound without free distance at both diameters.

The invention relates to an oxygen plasma cleaning method and system for removing ion pollutants in a cavity in situ. The method comprises the following steps: firstly, controlling the pressure in the cavity below 300mTorr, and introducing oxygen into the cavity; radio frequency is applied to the cavity, so that oxygen is ionized into oxygen ions and high-energy electrons; the oxygen ions and the metal ions are subjected to physical sputtering, so that the metal ions are desorbed from the surface of the cavity, and meanwhile, the high-energy electrons and the metal ions are subjected to neutralization reaction; and finally, metal ion characteristic peaks in the cavity are monitored in real time through the optical emission spectrum, a feedback adjustment mode is adopted till the metal ion characteristic peaks meet preset conditions, and cleaning is completed. Compared with the prior art, the device has the advantages of being good in cleaning effect, high in efficiency, environmentally friendly, stable and the like.

A substrate support assembly includes a cooling plate and a chuck disposed on the cooling plate. The chuck includes one or more heating electrodes, and one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. Another substrate support assembly includes a cooling plate, a first puck plate bonded to the cooling plate, and a second puck plate disposed on the first puck plate. The second puck plate includes one or more clamp electrodes to electrostatically secure the second puck plate to the first puck plate.

Embodiments of the present disclosure generally relate to an electrostatic chuck assembly suitable for use in cryogenic applications. In one or more embodiments, an electrostatic chuck assembly is provided and includes an electrostatic chuck having a substrate supporting surface opposite a bottom surface, a cooling plate having a top surface, where the cooling plate contains an aluminum alloy having a coefficient of thermal expansion (CTE) of less than 22 ppm / ° C., and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling plate.

A radio frequency (RF) power generator adapted for coupling to a multi-station integrated circuit fabrication chamber may include an oscillator to provide a periodic signal and one or more preamplifiers each having an input port to receive a signal from the oscillator and having an output port to provide an amplified signal. The RF generator may additionally include one or more constant-gain amplifiers, each having an input port to receive a signal from the one or more preamplifiers, and an output port configured for coupling an amplified signal to an electrode for generating a plasma in an assigned station of the multi-station integrated circuit fabrication chamber.

The invention discloses a parameter adjustment method of an ion implantation machine. The method comprises the following steps: acquiring a plurality of first parameters of an ion beam; acquiring historical data and screening at least one group of historical data close to the plurality of first parameters, wherein each group of historical data at least comprises a plurality of first parameters; inputting the plurality of first parameters and the historical data into a hybrid deep neural network model, and obtaining a predicted output variable; and adjusting a third parameter of the ion implantation machine according to the predicted output variable. According to the parameter adjustment method of the ion implantation machine provided by the invention, the third parameter of the machine is adjusted by adopting the hybrid deep neural network model, so that automatic ion beam parameter adjustment can be realized, the manual participation rate is reduced, and meanwhile, the working efficiency and the working accuracy of the machine which works for a long time can be improved.

The embodiment of the invention discloses an abnormity monitoring system applied to a plasma etching machine. The abnormity monitoring system comprises constant current source equipment, a coil, a coil detection circuit and a controller, and the constant current source equipment is configured to output driving current according to preset etching process parameters; the coil is configured to generate a magnetic field in the etching cavity in response to the input of the driving current to guide the plasma to move towards the direction of the substrate so as to etch the substrate; the coil detection circuit is configured to detect coil state data of the coil; the controller is configured to generate device service information based on the coil state data. According to the embodiment of the invention, the working state of the coil is monitored through the coil state data, and the actual condition of the coil is reflected through the equipment maintenance information, so that a user can quickly know whether the coil is in an abnormal state, the user is helped to quickly position the maintenance direction, the user is prevented from detaching and maintaining the coil from the etching cavity, and the user experience is improved. And various resource investments wasted due to the fact that the coil is abnormal do not exist.

A RF generator includes a RF power source. The RF power source outputs a time-varying signal to a load. At least one controller is coupled to the RF power source. The at least one controller is configured to generate an impedance control signal to control an impedance between the RF power source and the load. The at least one controller is further configured to generate the impedance control signal in response to a pulsed DC output signal from a second power source.

The present utility model discloses a multifunctional station for Nintendo Switch game console, comprising a base. The described base is equipped with a control circuit. The base is equipped with a console interface, a TV connection interface and a power interface. The console interface, the TV connection interface and the power interface are electrically connected to the control circuit respectively. The base is also equipped with Joy-Con controller charging slots and game card storage slots. The Joy-Con controller charging slots are provided with charging contacts. The control circuit is also electrically connected to the charging contacts inside the Joy-Con controller charging slots. The present utility model can simultaneously charge game controllers, store game cards, and display the game interface on a TV screen.

A method comprises: providing FIB and CPB columns with FIB and CPB optical axes coinciding at a wafer surface; in the coincidence arrangement, removing a cross section surface layer of a measurement site of a wafer using the FIB column to make a new cross section accessible for imaging; reducing a working distance between the CPB imaging column and the wafer surface in a direction along the axis of the CPB imaging column; imaging the new cross section at the measurement site of the wafer with the CPB imaging column at the reduced working distance and thus not in the coincidence arrangement; and increasing the working distance between the CPB imaging column and the wafer surface in the direction along the axis of the CPB imaging column until the coincidence arrangement is reached.

A plasma generation unit includes: a first coil that includes first conductors that are connected in parallel to each other; and a first distribution portion that distributes, to each of the first conductors, first high frequency power to be supplied to the first coil. The first distribution portion includes: a first input portion to which the first high frequency power is input; a first branch portion at which the first high frequency power input to the first input portion is divided and delivered into first branch lines; and second branch portions at each of which a corresponding one of the first branch lines branches out into second branch lines. Each of the second branch lines is connected to one of first application portions that are included in the first conductors. The first branch lines have a substantially equal length. The second branch lines have a substantially equal length.

The invention relates to a simplified gas delivery system for atomic layer etching. According to the system, the overall cost is reduced by omitting the requirements of a gas tank and a pressure gauge. A preset mass flow controller (MFC) and a three-way valve can accurately control the gas flow in the surface modification step and the sputtering step of the ALE process. By means of the self-limiting property of the ALE process, the system does not need to maintain the steady-state pressure of the chamber, and the efficiency can be improved only by controlling the volume of the conveyed gas.

Aberration correction systems and charged particle microscope systems including the same. An apparatus can include a charged particle source and an optical column. The optical column can include a multipole condenser with one or more condenser quadrupole-generating elements and / or a multipole objective with a plurality of objective multipole elements. The plurality of objective multipole elements can include at least three quadrupole-generating elements and at least three octupole-generating elements configured to at least partially correct a spherical aberration of a charged particle beam. The optical column can be configured such that the charged particle beam enters the multipole objective with a non-circular beam profile and / or such that the charged particle beam is characterized by a non-circular beam profile through at least a portion of the multipole objective.

Provided is a substrate processing apparatus including a chamber, an electrostatic chuck (ESC) in the chamber and configured to support a substrate, a shower head in the chamber and on the electrostatic chuck, and a ring assembly for a semiconductor process in the chamber and surrounding the electrostatic chuck, wherein the ring assembly for the semiconductor process includes a focus ring having a central axis extending in a first direction, an outer ring surrounding the focus ring, and a top ring on a top surface of the outer ring.

Systems and methods for generating nitric oxide are disclosed. A nitric oxide (NO) generation system includes at least one pair of electrodes configured to generate a product gas containing NO from a flow of a reactant gas; and a controller configured to regulate the amount of nitric oxide in the product gas produced by the at least one pair of electrodes by utilizing duty cycle values of plasma pulses selected from a plurality of discrete duty cycles to produce a target rate of NO production based on an average of discrete production rates associated with each of the plurality of discrete duty cycles.

A plasma processing system includes a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency. The plasma processing system includes a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency. The plasma processing system includes a junction box enclosure electrically coupling the pulsed voltage source to a direct current conductor coupled to a substrate support and further electrically coupling the pulsed voltage source to a radio frequency conductor coupled to a radio frequency baseplate. The junction box enclosure includes a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor and operable to filter the pulsed voltage waveform. The junction box enclosure further includes a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor and operable to filter the radio frequency waveform.

The present disclosure relates to high selectivity doped hardmask films, as well as methods of providing and using such films. In particular examples, the high selectivity doped hardmask film can be employed as a hardmask, an intermediate layer, or a coverage layer.

An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.