14769results about "Electric discharge tubes" patented technology

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Embodiments provided herein generally include apparatus, plasma processing systems and methods for tuning in a radio frequency (RF) plasma processing system for improving substrate processing metrics. Some embodiments are directed to an apparatus for processing a substrate in a plasma processing system. The apparatus generally includes: an impedance for a match circuit configured to perform impedance matching for a plasma load; a diode-based switch coupled to the impedance for the match circuit; at least one signal generator coupled to the diode-based switch and configured to bias the diode-based switch to a first position based on a first impedance generated in the plasma load; and a second position based on a second impedance generated in the plasma load and an RF signal generator configured to provide an RF signal to the plasma load.

High voltage connector (1,11) for an industrial power equipment configured to lead high current and withstand high voltage in particular usable for a plasma process equipment, the HV connector (1,11) is formed to fit into a corresponding plug (121) and comprises: - a plug-connecting-end (69 and an inner-end (7), - a connecting element (2), - an insulator body (3) surrounding the connecting element (2) at least partially, - the connecting element (2) having a rod shape which expands from the plug-connecting-end (6 to an inner-end (7), the connecting element (2) comprises a rod-diameter-changing-point 8, where the diameter of the connecting element (2) changes from a first rod-diameter (21) in direction to the plug-connecting-end (6) to a second rod-diameter (22) in direction to the inner-end (7), - the insulator body (3) having a shape with a hole (23), the hole (23) formed to surround the connecting element (2), the hole (23) having a hole-diameter-changing-point (9), where the hole-diameter of the hole (23) changes from a first hole-diameter (24) in direction to the plug-connecting-end (6) to a second hole-diameter (25) in direction to the inner-end (7), wherein the first hole-diameter (24) is equal to the first rod-diameter (21) and the second hole-diameter (25) is equal to the second rod-diameter (22), so that the insulator-body (3) fits tightly on the connecting element (2), and - the insulator body (3) is positioned in such a way that its hole-diameter-changing-point (9) is adjacent to the rod-diameter-changing-point (8) of the connecting element (2), so that the connecting element (2) and the insulator body (3) build a compound without free distance at both diameters.

The embodiment of the invention discloses an abnormity monitoring system applied to a plasma etching machine. The abnormity monitoring system comprises constant current source equipment, a coil, a coil detection circuit and a controller, and the constant current source equipment is configured to output driving current according to preset etching process parameters; the coil is configured to generate a magnetic field in the etching cavity in response to the input of the driving current to guide the plasma to move towards the direction of the substrate so as to etch the substrate; the coil detection circuit is configured to detect coil state data of the coil; the controller is configured to generate device service information based on the coil state data. According to the embodiment of the invention, the working state of the coil is monitored through the coil state data, and the actual condition of the coil is reflected through the equipment maintenance information, so that a user can quickly know whether the coil is in an abnormal state, the user is helped to quickly position the maintenance direction, the user is prevented from detaching and maintaining the coil from the etching cavity, and the user experience is improved. And various resource investments wasted due to the fact that the coil is abnormal do not exist.

The invention relates to a simplified gas delivery system for atomic layer etching. According to the system, the overall cost is reduced by omitting the requirements of a gas tank and a pressure gauge. A preset mass flow controller (MFC) and a three-way valve can accurately control the gas flow in the surface modification step and the sputtering step of the ALE process. By means of the self-limiting property of the ALE process, the system does not need to maintain the steady-state pressure of the chamber, and the efficiency can be improved only by controlling the volume of the conveyed gas.

A plasma processing system includes a pulsed voltage source configured to generate a pulsed voltage waveform having a first frequency. The plasma processing system includes a radio frequency source configured to generate a radio frequency waveform having a second frequency that is higher than the first frequency. The plasma processing system includes a junction box enclosure electrically coupling the pulsed voltage source to a direct current conductor coupled to a substrate support and further electrically coupling the pulsed voltage source to a radio frequency conductor coupled to a radio frequency baseplate. The junction box enclosure includes a pulsed voltage filter circuit coupled between the radio frequency source and the radio frequency conductor and operable to filter the pulsed voltage waveform. The junction box enclosure further includes a radio frequency filter circuit coupled between the pulsed voltage source and the direct current conductor and operable to filter the radio frequency waveform.

The invention discloses atomic layer etching adopting single process gas and rapidly adjusting chamber pressure. The process includes a step time designed for optimizing the surface modification and sputtering process, thereby minimizing undesirable effects. The customized waveform generator enables rapid and accurate control of the substrate bias, thereby shortening the ALE cycle time. Besides, by presetting set values for the MFC and the vacuum valve, rapid adjustment of the pressure of the cavity is achieved, traditional PID control is not needed, and therefore the efficiency and precision in semiconductor manufacturing are further improved.

The invention relates to a system and method for rapidly establishing steady state vacuum chamber pressure. According to the system, the set value of the vacuum valve is fixed, and the driving current of the MFC electromagnetic valve is used for adjusting the pressure of the cavity, so that the pressure is stabilized more quickly. The system can operate in a training mode and an inference mode. In the training mode, a PID controller is used for determining set values of an MFC and a vacuum valve; in an inference mode during substrate processing, these settings are quickly invoked and executed, thereby achieving efficient and stable pressure control.

The invention relates to a rapid gas delivery system and method for atomic layer etching. The system utilizes a compact gas buffer disposed near the gas distribution unit, enabling faster and more efficient delivery of gas to the chamber. The controller manages the gas flow of the gas buffer to maintain an amount of gas within the gas buffer required to perform a single ALE cycle. When one gas buffer delivers gas to the chamber for a partial ALE step, gas is concurrently delivered to the other gas buffer. The configuration not only can improve the efficiency, but also can save components such as a pressure gauge, thereby saving the cost.

Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

The invention relates to the technical field of transmission electron microscope in-situ experiments, in particular to a transmission electron microscope in-situ multi-field coupling experiment platform which comprises a sample rod, a carrying table, a thermoelectric chip, a magnetic field generating device and a flexible circuit board. A first mounting groove and a second mounting groove are formed in the carrying table; the thermoelectric chip is arranged in the first mounting groove, and a carrying part, an electrical control unit and a temperature control unit are arranged on the thermoelectric chip; the magnetic field generating device is arranged in the second mounting groove and can generate a controllable magnetic field on the carrying part; the carrying part is used for carrying a sample, the electrical control unit is configured to load and measure an electrical signal of the sample, the temperature control unit is configured to control and measure the temperature of the carrying part, and the transmission electron microscope in-situ multi-field coupling experiment platform provided by the invention realizes cooperative application and accurate control of an electric field, a magnetic field and a temperature field.

Embodiments disclosed herein include an apparatus that includes a radio frequency (RF) power supply, and a power splitter electrically coupled to the RF power supply. In an embodiment, the apparatus includes a plurality of impedance matches electrically coupled to the power splitter, where the power splitter is configured to split RF power from the RF power supply in order to supply the RF power to each of the plurality of impedance matches. In an embodiment, the apparatus further includes a plurality of chambers, wherein each chamber is electrically coupled to a different one of the plurality of impedance matches.

The invention discloses a scanning electron microscope. The scanning electron microscope comprises a scanning electron microscope main body and a sample table located in a sample cavity, the scanning electron microscope main body is fixedly connected with the upper cover of the sample cavity, so that a closed space is formed in the sample cavity; a closed-loop groove is formed in an upper cover of the sample cavity; wherein the groove is located outside the connection position of the upper cover of the sample cavity and the scanning electron microscope main body, and the bottom of the groove is not higher than the supporting surface of the sample table; a magnetic shielding layer is arranged in the groove; wherein the length of the magnetic shielding layer is not less than the distance from the objective lens of the scanning electron microscope main body to the supporting surface of the sample stage.

A system having the low frequency RF generator is described. The low frequency RF has an operating frequency range between 10 kilohertz (kHz) and 330 kHz. The low frequency RF generator generates an RF signal. The system further includes an impedance matching circuit coupled to the low frequency RF generator for receiving the RF signal. The impedance matching circuit modifies an impedance of the RF signal to output a modified RF signal. The system includes a plasma chamber coupled to the RF generator for receiving the modified RF signal. The plasma chamber includes a chuck having a dielectric layer and a base metal layer. The dielectric layer is located on top of the base metal layer. The dielectric layer has a bottom surface, and the base metal layer has a top surface. The base metal layer has a porous plug and the bottom surface of the dielectric layer has a portion that is in contact with the porous plug.

The invention relates to the technical field of wafer processing, in particular to a reaction chamber and plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage, a state monitoring device, a rotation driving device and a control unit, and is characterized in that the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged around the outer side of the quartz tube; the Faraday shielding cage is provided with a slit, and the orthographic projection of the slit on the circumferential wall of the quartz tube forms an erosion area; the state monitoring device is used for monitoring the erosion area; the driving end of the rotary driving device is connected with the quartz tube or the Faraday shielding cage; the control unit is in communication connection with the state monitoring device and the rotary driving device; according to the invention, through real-time monitoring and an active regulation and control mechanism, the problem of concentrated erosion of plasma to the quartz tube in a high-hydrogen process is effectively solved.

The invention discloses an integrated circuit equipment data optimization monitoring system and method based on big data, and relates to the technical field of integrated circuit manufacturing. The method is used for solving the problems of insufficient multi-physical field monitoring, difficulty in abnormal traceability and lack of closed-loop control in plasma etching. A plasma sheath thickness inversion model and an etching selection ratio model are constructed by collecting radio frequency reflection phase, mass spectrum ion strength and wafer temperature data, and process parameter-plasma state dynamic coupling is established. Interference image distortion features and electron microscope size data are fused, micro-groove geometric parameters are analyzed, morphology instability risk indexes are generated, and nanoscale early warning is achieved. And designing a dual-channel fusion network, embedding a physical constraint attention mechanism, and generating an etching rate optimization instruction. On the basis of incremental learning, model parameters are updated online, a'monitoring-decision-feedback 'closed-loop system is formed, anomaly detection sensitivity and decision reliability are improved, and technical support is provided for intelligence of integrated circuit equipment.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and plasma processing equipment, and the reaction cavity comprises a quartz tube; the first coil surrounds the outer side of the quartz tube and is connected with an external radio frequency power supply; the Faraday shielding cage is annularly arranged outside the quartz tube and between the quartz tube and the first coil, and a plurality of slits which penetrate through the side wall of the Faraday shielding cage and extend in the axial direction are formed in the Faraday shielding cage; the blocking piece is arranged in the quartz tube, and a structure formed by orthographic projection of the blocking piece on the circumferential side wall of the Faraday shielding cage covers a structure formed by orthographic projection of the first coil on the circumferential side wall of the Faraday shielding cage; the blocking piece is arranged in the quartz tube, so that concentrated bombardment of plasma generated in the high-hydrogen process on the inner wall of the quartz tube can be effectively blocked, the problems of erosion of the quartz tube and particle stripping are remarkably relieved, the process yield of plasma processing equipment is increased, and the service life of a machine table is prolonged.

A substrate support assembly includes a cooling plate and a chuck disposed on the cooling plate. The chuck includes one or more heating electrodes, and one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. Another substrate support assembly includes a cooling plate, a first puck plate bonded to the cooling plate, and a second puck plate disposed on the first puck plate. The second puck plate includes one or more clamp electrodes to electrostatically secure the second puck plate to the first puck plate.

Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.

An electron-optical projection device for projecting a plurality of charged particle beams towards a sample, the device comprising a stack of plates comprising beam directing elements configured to project the plurality of charged particle beams towards a sample location on the sample, wherein at least one plate of the stack comprises a planar optical member configured to direct stimulation light towards the sample location so that the stimulation light is coincident with the plurality of charged particle beams, desirably coincident with the paths of the plurality of charged particle beams towards the sample location, desirably in the at least one plate comprising an optical member is defined a plurality of apertures for respective paths of a plurality charged particle beams.

Systems or techniques are provided for facilitating improved digital twin calibration for scientific instruments. In various embodiments, a system can synchronize, via execution of a state-wide Bayesian filter, a parametric state of a digital twin with a physical state of a scientific instrument. In various instances, the state-wide Bayesian filter can comprise a set of calibration iterations, each of which can comprise a Bayesian update to an entirety of the parametric state based on an iteration-common observable that is exhibitable by the scientific instrument and simulatable by the digital twin. In various cases, the scientific instrument can be a charged-particle microscope, the parametric state of the digital twin can be an aberration coefficient vector of the charged-particle microscope, and the iteration-common observable can be a Fourier transform of a convergent beam electron diffraction pattern of an amorphous carbon specimen captured by the charged-particle microscope.

Embodiments of the disclosure provided herein includes systems and methods for high power semiconductor manufacturing. The system includes a processing chamber, a substrate support assembly disposed within the processing chamber, and an advanced thermal management system coupled to the substrate support assembly. The advanced thermal management system includes one or more heating elements embedded within a body of the substrate support assembly and a cooling plate assembly embedded within the body disposed adjacent to the one or more heating elements. The cooling plate assembly includes a first cooling plate with a first cooling gas channel, a second cooling plate with a second cooling gas channel fluidly coupled to the first cooling plate by a connecting line, a supply line coupled to the first cooling gas channel, and a return line coupled to the second cooling gas channel.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity and plasma processing equipment, comprising a quartz tube, an induction coil and a shielding member, the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged on the outer side of the quartz tube in a surrounding manner and comprises a plurality of annular sections which are arranged at intervals in the axial direction of the quartz tube and a plurality of connecting sections which are arranged between every two adjacent annular sections and are used for connecting every two adjacent annular sections; the shielding component is annularly arranged between the quartz tube and the induction coil and comprises a plurality of annular shielding parts arranged in the axial direction of the quartz tube and a plurality of arc-shaped shielding parts arranged between every two adjacent annular shielding parts and used for connecting every two adjacent annular shielding parts; a slit is formed between two adjacent annular shielding parts; concentrated bombardment of high-energy ions on the inner wall of the quartz tube can be obviously prevented, so that erosion of the quartz tube is effectively reduced, particulate matter is reduced, the service life of a machine is prolonged, and the process yield is increased.

Provided is an inspecting apparatus for semiconductor device including a chamber, a substrate stage within the chamber and configured to load a test wafer, the test wafer including a plurality of wiring layers, a milling device configured to partially remove the test wafer, and a measuring device including a body portion, a light source configured to irradiate an incident light, an objective lens, a lens assembly having a plurality of optical filter and an optical splitter, wherein the lens assembly is configured to introduce the incident light such that the incident light is emitted on the test wafer; and a polarization camera configured to scan the test wafer by receiving reflected light reflected from the test wafer, wherein the measuring device is configured to measure polarization characteristic of the reflected light and uniformity of the test wafer.

A LSP broadband light source is disclosed. The light source may include a gas containment structure. The light source may include multiple jet nozzles, wherein the jet nozzles are configured to generate supersonic gas jets and direct the supersonic gas jets to collide within the gas containment structure to form a localized high-pressure region at the collision point. The light source may include a primary laser pump source, wherein the primary laser pump source is configured to direct a primary pump beam to a localized high-pressure region formed at the collision point. The light source may include a pulsed-assisting laser source, wherein the pulsed-assisting laser source is configured to direct a pulsed-assisting beam to the localized high-pressure region at the collision point. The light source may include a light collector element configured to collect broadband light emitted from the plasma.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and / or patterning performance of the imaging layer.

The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a process cavity with a controllable gas flow field and plasma processing equipment, and the process cavity comprises a cavity body which is provided with a cavity for bearing a wafer; the air inlet channel is communicated with the cavity; the main air exhaust channel is arranged at the bottom of the cavity body and is communicated with the cavity; the main air exhaust channel is connected with a main control valve; the auxiliary air exhaust channel is arranged on the side wall of the cavity body and is communicated with the cavity; the main control valve and the auxiliary control valve work cooperatively. The control device is in communication connection with the main control valve and the auxiliary control valve; through the cooperation of the auxiliary air exhaust channel and the auxiliary control valve and the cooperation of the main air exhaust channel and the main control valve, the flow field distribution in the process cavity is adjusted, the gas concentration gradient and the edge dead zone in the radial direction of the wafer are guided to be eliminated, and the consistency of the side face angle, the surface roughness center area and the edge area of the outer ring groove or hole of the wafer is achieved.

The invention relates to the technical field of semiconductor manufacturing, provides a wafer dry etching control method and system, aims to monitor an etching process in real time and dynamically control the etching process with high precision, and comprises the following steps: step 1, monitoring etching equipment, and collecting an etching parameter combination of etching and image information of a wafer etching area; 2, constructing a real-time data processing model, developing a multi-objective optimization function, and inputting a target value into the multi-objective optimization function to obtain an initial etching parameter combination; 3, in the etching process, a predicted value of etching result data is obtained through the real-time data processing model, the predicted value is compared with a target value, and an etching parameter combination of etching is dynamically adjusted; and 4, constructing an end point prediction model, monitoring whether the image features of the etched image information reach a preset threshold value or not in real time by the end point prediction model, and if yes, sending an etching end point signal. In addition, the invention provides a semiconductor wafer high-precision dry etching control system.

Embodiments of the invention includes various power supplies for plasma systems. These power supplies, for example, closes a switch to connect and disconnect a current pathway to cause an application of an asymmetric periodic voltage waveform. Where each cycle of the asymmetric periodic voltage waveform includes a first portion that begins with a first negative voltage and changes to a positive peak voltage, a second portion that changes from the positive peak voltage to a third voltage level and a fourth portion that includes a negative voltage ramp from the third voltage level to a fourth voltage level.

A substrate support assembly includes a cooling plate. The substrate support assembly further includes a chuck disposed on the cooling plate. The chuck includes one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. The substrate support assembly further includes multiple mesas formed on a bottom surface of the chuck or formed on a top surface of the cooling plate to separate the chuck from the cooling plate.