29 results about "Capacitively coupled plasma" patented technology

The invention provides a method for measuring impedance of a capacitively coupled plasma source, which comprises the following steps of: under the condition that plasma is not ignited, dividing a cavity into an upper part and a lower part along an electrical middle plane, and establishing an equivalent circuit model comprising five elements to be determined; three measurement ports are defined, five independent measurement boundary conditions are set, sweep frequency measurement is carried out by using a network analyzer, and multiple groups of Z parameter data are obtained; then, on each frequency point, joint fitting is carried out on a theoretical impedance expression of the equivalent circuit and actually measured data, and parameter values of all undetermined elements are solved; and finally, outputting a parameter curve of each element along with frequency change and a cavity equivalent impedance spectrum. According to the method, the problem that equivalent parameters cannot be identified is solved through multi-working-condition data redundancy, universal, accurate and reproducible measurement of the impedance of the pure cavity is realized, and a reliable quantitative basis is provided for matching network design, process window prediction and cavity optimization.

The invention belongs to the field of plasma devices, and particularly relates to an electrode assembly, a preparation method thereof, a capacitive coupling plasma discharge cavity and a plasma device. The electrode assembly comprises a heating disc, a supporting seat and an electrode, the supporting seat is vertically connected with the heating disc; the supporting seat is in a hollow tubular shape and comprises a tubular supporting seat base body and a first metal conductive layer covering the inner surface of the supporting seat base body. The supporting seat base body is made of a ceramic material; the electrode comprises a first part embedded in the heating disc and a second part located on the center shaft of the supporting base. Parasitic plasmas can be prevented from being generated in the vacuum cavity around the supporting seat, and the process stability is improved.

A method of controlling stress variation in a layer including silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system. The method includes providing a chamber comprising a platen for supporting a substrate, placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen, introducing a gas comprising oxygen into the chamber, introducing trimethylsilane gas into the chamber, generating a plasma within the chamber, maintaining a temperature at which deposition takes place to less than 275° C., maintaining a pressure within the chamber in the range 1.5-3 Torr, and depositing the layer upon the substrate with a deposition rate >1.5 μm / minute.

The application provides a magnetic field enhanced coupling plasma processing device and method, which comprises a capacitively coupled plasma device and a racetrack magnetic pole device; the capacitively coupled plasma device comprises an upper anode plate and a lower cathode plate, a plasma working area is formed between the upper anode plate and the lower cathode plate, and an electric field is formed between the upper anode plate and the lower cathode plate; the racetrack magnetic pole device comprises a moving device and a racetrack magnetic pole installed on the moving device, the moving device drives the racetrack magnetic pole to move along a plane parallel to the lower cathode plate; the racetrack magnetic pole comprises adjacent permanent magnets with opposite magnetic poles, and the permanent magnets form an additional coupling magnetic field which restricts the bipolar diffusion motion of electrons in the electric field. The application modulates the density, distribution and directional drift of the multi-field coupled plasma, greatly improves the actual processing efficiency of difficult-to-process materials, makes the plasma rapid processing of medium-large aperture optical elements possible, and improves the laser damage resistance of the elements.

A method and apparatus for filling a gap with a material comprising silicon are disclosed. The method comprises providing a substrate into a reaction chamber, wherein the substrate comprises at least one gap; providing a first reactive species generated from a capacitively-coupled plasma produced from a first reactant gas into the reaction chamber; and executing a plurality of deposition cycles. The deposition cycle comprises providing a first silicon precursor in vapor phase into the reaction chamber; and providing a second reactive species generated from an inductively-coupled plasma produced from a second reactant gas into the reaction chamber.

A plasma process chamber is designed with an upper section functioning as an inductively coupled plasma (ICP) chamber for generating neutrals, and a lower section operating as a capacitively coupled plasma (CCP) chamber for generating high-energy ions. These sections are separated by a grounded ion filter (GIF), composed of conductive materials such as aluminum or silicon. The GIF blocks ions while allowing neutrals to pass, preventing ions from reaching the substrate during the surface modification step of the atomic layer etching (ALE) process. This design provides enhanced control over the ALE process, resulting in more precise substrate modification and improved etching efficiency.

A plasma processing apparatus integrates an inductively coupled plasma (ICP) chamber and a capacitively coupled plasma (CCP) chamber. The ICP chamber and the CCP chamber are in fluid communication with each other through a showerhead located between the ICP chamber and the CCP chamber. The substrate is supported on a susceptor in the CCP chamber. The ICP chamber generates a remote plasma in the ICP chamber, while the CCP chamber generates a direct plasma in an environment adjacent the substrate. In some embodiments, a remote plasma generated by the ICP chamber may assist in depositing a first layer on a substrate, while a direct plasma generated by the CCP chamber may assist in etching or processing the first layer, or depositing a second layer on a substrate, without having to transfer the substrate between modules or between stations.

Disclosed are an electrode for a capacitively coupled plasma generating device, a capacitively coupled plasma generating device comprising same, and a capacitively coupled plasma uniformity adjusting method. This electrode for a capacitively coupled plasma generating device may comprise: a first plate-shaped electrode; a second plate-shaped electrode positioned around the first plate-shaped electrode on the same plane as the first plate-shaped electrode; and a power supply unit for applying radio-frequency (RF) power to the first plate-shaped electrode and the second plate-shaped electrode. The power supply unit may apply RF power having different phases to the first plate-shaped electrode and the second plate-shaped electrode.

The invention discloses a numerical simulation method for two-dimensional Ar-He mixed gas capacitive coupling plasma discharge, and belongs to the technical field of plasma numerical simulation. According to the method, a particle grid method and a Monte Carlo collision method are combined, a gas environment and a two-dimensional grid are initialized, and loop execution is carried out at each time step; an area weight method is used for distributing charges and electric field interpolation, an SOR method is used for solving a Poisson equation, a leapfrog method is used for updating particle motion, a boundary effect and a specific collision event are processed, after a system is stable, statistics is carried out on energy distribution of ions reaching an electrode, and whether the energy distribution is unimodal distribution is judged. And outputting key data of ion energy, ion flux, plasma uniformity and surface topography control for guiding process optimization based on the distribution. According to the method, the defect that a one-dimensional model ignores the radial effect is overcome, the cooperative discharge mechanism of the Ar-He mixed gas is accurately simulated, high-precision key data are provided for semiconductor plasma process optimization, and the method has important practical value.

Disclosed is an advanced plasma process chamber for semiconductor fabrication, capable of performing both dielectric material etching with a capacitively coupled plasma (CCP) reactor and radical-based highly selective etching (HSE) within a single chamber. In some embodiments, a radical-based deposition step is also applied to enhance etching performance. The chamber features a novel grounded ion filter (GIF) designed for precise ion and neutral particle control, enabling efficient and high-precision etching processes essential for the fabrication of complex semiconductor devices.

A method for preparing a surface for bonding utilizes multiple processing techniques to increase bonding strength. The method can include performing a first processing technique on a surface of a material using a first plasma process to promote diffusion into a first surface of a diffusion layer deposited after the first processing technique, where the first processing technique uses a capacitively coupled plasma (CCP) or a combination of both CCP and inductively coupled plasma (ICP); forming the diffusion layer on the surface of the material; performing a second processing technique to increase diffusion of the diffusion layer into the surface of the material using a second plasma process, where the second processing technique uses CCP; and performing a third processing technique to form dangling bonds on the diffusion layer using a third plasma process, where the third processing technique uses ICP or a combination of both CCP and ICP.

According to an embodiment, a hybrid plasma processing system for generating an inductively coupled plasma is proposed. The hybrid plasma processing system includes a plasma chamber, a showerhead electrode, an RF feed structure, and an inductive element. The plasma chamber includes a center electrode, showerhead, and a coaxial RF power feed. The plasma chamber is configured as a capacitively coupled plasma (CCP) chamber. The showerhead electrode is configured to control gas flow within the capacitively coupled plasma chamber. The showerhead electrode is coupled to ground. The RF feed structure is couplable to an RF source. The inductive element is coupled to the RF feed structure configured to form a resonant circuit to generate a magnetic field to sustain the inductively coupled plasma generated within the capacitively coupled plasma chamber.

This invention relates to a high-frequency plasma light source (1), wherein, in the operating state, a quasi-capacitively coupled plasma is formed by at least two plasma anchors (6, 7), thus the plasma region with the highest energy density is spatially decoupled from the plasma anchors (6, 7). The high-frequency plasma light source (1) includes: - a pressure chamber (5) containing a gaseous medium, in the operating state, a luminescent plasma is formed within the pressure chamber; - an impedance converter (4) assembly connected to the pressure chamber (5) and including a coupling pin (8) for coupling electromagnetic waves into the high-frequency plasma light source (1) and having an internal guide... The inner conductor (9) and the outer conductor (9b) are coaxial conductors (9a) and (9b), wherein a dielectric pressure seal (13) and at least one conductive or dielectric connector (10, 12) are provided between the inner conductor (9a) and the outer conductor (9b), an inner conductor plasma anchor (6) extending into the pressure chamber (5) and electrically and mechanically connected to the inner conductor (9a) of the coaxial conductor (9), and an outer conductor plasma anchor (7) having a first end (7a) located in the pressure chamber (5) and a second end (7b) mechanically connected to the inner surface of the pressure chamber (5).

The invention discloses etching and cleaning equipment for the surface of large-area TGV glass and the inner wall of a deep hole, and belongs to the technical field of semiconductor etching and cleaning equipment. The invention aims to solve the problems of non-uniform plasma distribution, low density and poor deep hole etching effect when the existing equipment is used for processing a large-area substrate. The equipment integrates a main processing chamber with a capacitive coupling plasma (CCP) reaction chamber as a core and a remote inductive coupling plasma (ICP) source located outside the chamber, and ICP plasma is injected to the periphery of a CCP processing area through a pipeline for compensation. On the basis, the equipment is combined with a multi-stage gas spraying structure, a lower electrode rotating and biasing function and an insulating fluid cavity made of polyether-ether-ketone or polytetrafluoroethylene. According to the design, edge attenuation is compensated, cooperative control of the center and the edge is achieved through multi-structure optimization, and the etching and cleaning speed and uniformity of the large-area TGV glass are improved.

According to an embodiment, a hybrid plasma processing system for generating an inductively coupled plasma is proposed. The hybrid plasma processing system includes a plasma chamber, a showerhead electrode, an RF feed structure, and an inductive element. The plasma chamber includes a center electrode, showerhead, and a coaxial RF power feed. The plasma chamber is configured as a capacitively coupled plasma (CCP) chamber. The showerhead electrode is configured to control gas flow within the capacitively coupled plasma chamber. The showerhead electrode is coupled to ground. The RF feed structure is couplable to an RF source. The inductive element is coupled to the RF feed structure configured to form a resonant circuit to generate a magnetic field to sustain the inductively coupled plasma generated within the capacitively coupled plasma chamber.

This invention relates to an etching method for a semiconductor device. The semiconductor device includes a dielectric layer and a metal layer stacked together. The etching method includes: performing a first etching starting from the surface of the dielectric layer away from the metal layer, etching to a remaining first thickness of the dielectric layer; continuing with a second etching until the dielectric layer is completely etched and the metal layer is etched to a second thickness; the first etching method includes capacitively coupled plasma dry etching, and the second etching method includes inductively coupled plasma dry etching; the cleaning gas used in the first etching does not include chlorine. This invention uses a combination of CCP and ICP. The CCP machine etches the dielectric layer to a remaining first thickness, and then the ICP machine etches to a second thickness of the metal layer. This allows the CCP and ICP machines to maintain their original cleaning procedures during cavity cleaning, reducing costs, improving machine uptime, and extending the cleaning and maintenance cycle.

A method and system for atomic layer etching (ALE) are disclosed, utilizing a single gas or gas mixture without gas exchanges throughout the process. The plasma process chamber features an inductively coupled plasma (ICP) section for generating neutrals and a capacitively coupled plasma (CCP) section for ion-burst sputtering, separated by a grounded ion filter (GIF) that blocks ions while allowing neutrals and unreacted gases to pass. The system is optimized for forming high aspect ratio (HAR) structures.

The application provides a method for measuring the impedance of a capacitive coupling plasma source, which comprises the following steps: under the condition that no plasma is ignited, a cavity is divided into an upper part and a lower part along an electrical median plane, and an equivalent circuit model containing five undetermined elements is established; three measurement ports are defined, five kinds of independent measurement boundary conditions are set, sweep measurement is carried out by using a network analyzer, and multiple sets of Z parameter data are obtained; then at each frequency point, a theoretical impedance expression of the equivalent circuit is combined with the measured data for joint fitting, and the parameter values of all the undetermined elements are solved; finally, the parameter curves of each element varying with frequency and the equivalent impedance spectrum of the cavity are output. The application solves the problem of indistinguishable equivalent parameters through redundant multi-working condition data, realizes general, accurate and reproducible measurement of the pure cavity impedance, and provides a reliable quantitative basis for matching network design, process window prediction and cavity optimization.

The invention provides a capacitive coupling plasma etching machine and a method for improving in-plane uniformity. The etching machine table comprises a lower electrode and an upper electrode, and the upper electrode is divided into a plurality of areas capable of moving independently and driven by a plurality of driving mechanisms respectively. The method comprises the following steps: providing the etching machine table; independently adjusting the vertical position of at least one region in the plurality of regions of the upper electrode according to the in-plane uniformity distribution to be improved of the wafer; local plasma distribution is adjusted and the wafer is etched by adjusting and changing a local gap between the region and the wafer. By partitioning the upper electrode and realizing independent lifting of each region, the plasma distribution can be accurately and locally regulated and controlled, the problem of non-concentric circle uniformity which is difficult to correct in the prior art is effectively solved, and the uniformity in the etching surface, the process window and the product yield are remarkably improved.

The utility model relates to the technical field of semiconductor processing, and discloses a spray header and a capacitive coupling plasma processing device. A cooling layer is arranged on one side of the spraying head, cooling runners are uniformly arranged on the cooling layer, and the cooling runners are used for circulating a temperature control medium; a spraying layer is arranged on the other side of the spraying head, a gas cavity is formed in the spraying layer, a spraying plate is arranged on the side, away from the cooling layer, of the gas cavity, and a plurality of first air holes are formed in the spraying plate; one end of the air inlet hole is positioned on one side, far away from the spraying layer, of the cooling layer, and the other end of the air inlet hole is communicated with the gas cavity. According to the utility model, the cooling layer and the spraying layer are integrated in one spraying head, so that the installation and maintenance operations are simplified, the cost is reduced, and the reliability of equipment and the precision and consistency of semiconductor manufacturing are obviously improved; the problem that an external cooling system in a traditional structure is high in heat loss is solved.

The application discloses a kind of etching and cleaning equipment of large-area TGV glass surface and deep hole inner wall, belong to semiconductor etching and cleaning equipment technical field.The technical problem to be solved is that existing equipment exists uneven plasma distribution, low density and poor deep hole etching effect when processing large-area substrate.Technical solution points are that the equipment includes a main processing chamber with a capacitively coupled plasma (CCP) reaction chamber as the core, and a remote inductively coupled plasma (ICP) source located outside the chamber, and is provided with one or more dedicated pipelines to directly transport and inject high-density plasma generated by the ICP source into the periphery of the CCP processing area.This design can accurately compensate for the plasma density decay at the edge of the substrate, achieving a synergistic effect of center and edge plasma control, and improving the etching and cleaning rate and uniformity of large-area.

A capacitively coupled plasma etching apparatus includes an etching chamber, a plasma generation chamber, a first electrode, a first comb-shaped electrode, a second comb-shaped electrode, and a second electrode. The plasma generation chamber is located on the etching chamber. The first electrode, the first comb-shaped electrode, the second comb-shaped electrode, and the second electrode are located within the plasma generation chamber. The first electrode is located on the second electrode. The first comb-shaped electrode and the second comb-shaped electrode are located between the first electrode and the second electrode. The first comb-shaped electrode includes a plurality of third electrodes. The second comb-shaped electrode includes a plurality of fourth electrodes. The plurality of third electrodes and the plurality of fourth electrodes are arranged alternately.

Methods and apparatus for filling gaps with a material including silicon are disclosed. The method includes providing a substrate into a reaction chamber, where the substrate includes at least one gap; providing a first reactive species generated by a capacitively coupled plasma into the reaction chamber, the capacitively coupled plasma generated from a first reactant gas; and performing a plurality of deposition cycles. The deposition cycles include providing a first silicon precursor in a gas phase into the reaction chamber; and providing a second reactive species generated by an inductively coupled plasma into the reaction chamber, the inductively coupled plasma generated from a second reactant gas.

Embodiments disclosed herein include immersion inductively coupled plasma and capacitively coupled plasma excitation methods, apparatus, and processes for large-area substrates. The process chamber includes a pedestal for supporting a workpiece in the processing space, an array of inductors in a portion of the processing space above the pedestal, and a chamber top or lid above the array of inductors.

The invention relates to the technical field of hybrid bonding, in particular to a dual-frequency capacitive coupling plasma discharge device for hybrid bonding, and mainly solves the technical problem that a plasma discharge device is not suitable for large-size wafers. The device comprises a cavity assembly, a source electrode assembly and a bias electrode assembly, the cavity assembly comprises a cavity side wall, a cavity cover plate and a cavity bottom plate, the source electrode assembly comprises an upper insulating plate, a source electrode plate, an upper connector and an air inlet connector, and the bias electrode assembly comprises a lower insulating plate, a bias electrode plate and a lower connector. According to the device, through the structural design, process gas can only be sprayed out of the gas holes through the unique channel, and the process gas can be finally and uniformly diffused into the working cavity by matching with the characteristic that the gas holes are uniformly distributed; and meanwhile, the vacuumizing system can be used for uniformly vacuumizing the working cavity. Through the cooperation of the two aspects, the device can greatly improve the uniformity of the process gas, so that the device can be suitable for processing large-size wafers of 8 inches, 12 inches and the like.

This invention discloses a method for controlling stress variations in a layer comprising silicon carbide formed using a capacitively coupled plasma-enhanced chemical vapor deposition system. The method comprises the following steps: - providing a chamber including a stage for supporting a substrate; - placing the substrate on the stage, on which the silicon carbide-containing layer may be formed; - introducing oxygen-containing gas into the chamber; - introducing trimethylsilane gas into the chamber; - generating plasma in the chamber; - maintaining the temperature at which deposition occurs to less than 275°C; - maintaining the pressure in the chamber in the range of 1.5-3 Torr; - depositing the layer on the substrate at a deposition rate >1.5 μm / min.

The application discloses a multi-direction source capacitive coupling plasma source device and a processing method thereof, which comprises a vacuum cavity, an insulating shell formed by a quartz glass material and covering the vacuum cavity outside the vacuum cavity, and a capacitive electrode in the hollow insulating shell; the capacitive electrode is made of an electrode material in a circular structure, and a plurality of capacitive electrodes in each direction are arranged in parallel at equal intervals; the capacitive electrode is connected to the outside of the insulating shell through a first connecting point formed by a conductive metal; and a control switch is connected to the first connecting point through a wire, and the control switch is used for controlling the capacitive electrode to realize final discharge by controlling the opening and closing of the control switch. The multi-direction built-in capacitive design in the cavity can realize omnidirectional plasma distribution control in the cavity, and the capacitive electrodes on each side are excited by a separate radio frequency power source to realize independent control of plasma distribution on each side.

A method of controlling stress variation in a layer comprising silicon oxycarbide formed using a capacitively coupled plasma enhanced chemical vapour deposition system, is disclosed. The method comprises the steps of: - providing a chamber comprising a platen for supporting a substrate; - placing a substrate, upon which a layer comprising silicon oxycarbide is formable, upon the platen; - introducing a gas comprising oxygen into the chamber; - introducing trimethylsilane gas into the chamber; - generating a plasma within the chamber; - maintaining a temperature at which deposition takes place to less than 275°C; - maintaining a pressure within the chamber in the range 1.5-3Torr; - depositing the layer upon the substrate with a deposition rate >1.5µm / minute.