400 results about "Radial distribution" patented technology

A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.

Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.

A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

A method of forming a composite lesion pattern in a tissue region at or near a sphincter comprising providing a catheter having a plurality of energy delivery devices coupled to the catheter. The catheter is introduced at least partially into the sphincter. Energy is delivered from the energy delivery devices to produce the composite lesion pattern. The composite lesion pattern comprises a radial distribution of lesions about the tissue region and a longitudinal distribution of lesions along the tissue region.

A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the process region at a level that provides the desired plasma ion density. The plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers. The VHF capacitively coupled power may be applied from the ceiling or from the wafer support.

A method for determining the flow rates of a fluid comprising a multi-component mixture of a gas and at least one liquid in a pipe, the method comprising the following steps: a) the multi-component mixture flow is conditioned to create a symmetrical annular gas concentration flow condition, b) the density distribution and / or dielectric constant distribution in said symmetrical flow within a cross-section of the pipe is determined, c) a function describing the radial distribution of density and / or radial distribution of dielectric constant is determined, d) the velocity of the multi-component mixture is determined, e) the temperature and pressure are obtained, and, f) based on the knowledge of densities and / or dielectric constants of the components of the fluid mixture, and the result from the above steps a-e, the volume and / or mass flow rates of the gas and liquid components of the fluid mixture are calculated. An apparatus for performing the method is also disclosed.

The invention relates to a device for holding a plate-like article, comprising: a rotating axle and a chuck body rotating on the rotating axle for holding the plate-like article, the chuck body comprises at least three spoke-shaped supports or circular trays in the radial distribution, a chock block of the chuck body is arranged under, a spring is mounted on the chock block of the chuck body, at least three holding elements are arranged at the edge of the chuck body and are used for clamping the plate-like article, a chock block of the holding element is arranged at the bottom of the holding element and can be inserted into the spring and extrude the spring until contacting the chuck body chock block of the chuck body, a drive member is arranged at the position under the chuck body relative to the each holding element and is used for push or suck the holding element to rotate, consequently, the plate-like article is loosened and clamped. The device of the invention has simple structure, easy realization, and little damage to the plate-like article.

A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.

Provided is a method for measuring temperature of long-gap air arc plasma, relating to heat plasma temperature measurement field. The method is based upon spectrum diagnosis principle of air arc plasma radiation, shooting long-gap air arc image through an attachment double-narrow-band-pass filter and a calibrated color CCD high speed image acquisition system, and storing in BMP format which data is not compressed; correcting pixel value of arc color bitmap file responded with two feature center wavelengths to original data of arc radiation intensity; obtaining arc radial light intensity distribution through Abel transformation, then calculating arc plasma projection temperature distribution or arc plasma temperature radial distribution by a colorimetry of spectrum relative intensity, and rebuilding tridimensional temperature field. The method of the present invention can measure open arc plasma temperature in air of several meters accurately and provides an important plasma parameter for researching microcosmic mechanism of long-gap air arc.

The invention fully utilizes the gray information and image features of iris image, comprising the following steps: the brightness of the image is detected based on histogram features; whether the iris deviates from image center is judged based on a rough center position of the pupil; the two special reflective spots formed near the pupil by the infrared source are detected; whether blinking or non-human eye image exists is judged based on the existence and size of reflective spots; iris texture and gray value characteristics of eyelashes and eyelids are analyzed, and iris texture availability is calculated; based on the characteristics of radial distribution of iris texture, iris texture definition is effectively judged due to adopting edge gradient energy function. The method of selecting qualified iris images from video stream in iris automatic collection system is realized through evaluating each collected image frame step by step; the preset threshold is compared through sub-steps, thus correctly evaluating iris image quality with strong generality.

The invention discloses a gallium and indium doped single crystal silicon material for a solar battery, which consists of the following components according to atom number per cubic centimeter of the single crystal silicon material: 1.0X10<14> to 1.0X10<18> gallium, 5.0X10<12> to 5.0x10<16> indium and the balance of single crystal silicon. The invention also discloses a method for preparing the gallium and indium doped single crystal silicon material for the solar battery, which is implemented by the following steps of: dismantling a furnace by using a regular method, cleaning a hearth and assembling the furnace; vacuumizing the inside of a single crystal furnace and detecting the leakage of the single crystal furnace by using a regular method; pressuring materials and smelting the materials; stabilizing the melt; seeding crystals; performing shouldering; performing shoulder rotation; performing isodiametric growth; performing ending and cooling the obtained product; and stopping the furnace. The gallium and indium doped single crystal silicon material for the solar battery has the advantages of high conversion efficiency, low light attenuation, low oxide content in the single crystal silicon and uniform radial distribution in a single crystal silicon rod; and the preparation method of the invention effectively controls the thermal conversion of silicon melt and grows the high-quality gallium and indium doped single crystal silicon material for the solar battery.

The invention relates to a multi-ring matrix burden distribution process for a bell-less top of a blast furnace, belonging to the technical field of burden distribution of blast furnaces. A multi-ring burden distribution process is combined with a burden distribution matrix, and the burden distribution matrix is set according to 9-11 ring sites; generally, 4-6 ring sites are selected for distributing coke, and 3-5 ring sites are selected for distributing ore; the number of turns on each ring site for distributing coke is selected preferably to enable the coke to be laid horizontally; the number of turns on each ring site for distributing ore is selected to control the ore coke ratio on the furnace throat radius, thereby controlling radial distribution of coal gas flow; and the number of turns for distributing coke and distributing ore is generally controlled to be 10-14 turns. The invention can obtain furnace throat coal gas distribution in which coal gas at edges has certain passages and coal gas in the center develops, and the burden distribution is flexible and adjustable, thereby keeping stable and smooth operation of the blast furnace, realizing the purposes of opening the center and stabilizing the edges, improving the utilization ratio of coal gas, reducing the fuel ratio of the blast furnace, and further reducing the production cost.

The invention discloses a ball type motor with a three-dimensional topology magnetic pole distribution structure The ball type motor comprises an outer rotor (1), an outer stator (2), a ball bearing (3), a base (4), an inner rotor (5) and an inner stator (6), wherein the rotor and the stator are sleeved with each other; the ball bearing (3) is installed in the inner stator (6); the inner rotor (5) is sleeved on the external part of the inner stator (6); the outer stator (2) is sleeved on the external part of the inner rotor (5); and the outer rotor (1) is sleeved on the external part of the outer stator (2). The electromagnetic force driving is adopted for the ball type motor disclosed by the invention, besides magnetic poles and coil magnetic poles are distributed along a spherical surface, and also can be distributed along the radial direction, thus the magnetic field intensity of a coil magnetic pole region is increased greatly, simultaneously the interaction force between the magnetic poles is improved, not only can the continuous rotation space with spatial three degrees of freedom of the ball motor rotor can be realized, but also the output torque, especially the tilting moment, of the ball motor is improved effectively.

A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.

The invention relates to a small current earth fault line selection method for a radial distribution network. The small current earth fault line selection method for the radial distribution network comprises the steps that firstly, the line reference values of fault lines and non-fault lines are calculated according to the number of branch lines of a current radial distribution network system; secondarily, taking a Gabor atom dictionary as the index, a matching tracing algorithm is utilized to carry out time frequency atomic decomposition on transient zero-sequence current of each fault branch line within the first one quarter cycle, and attenuation sinusoidal quantity atoms representing the fault feature information of branch lines are further obtained; thirdly, an improved gray correlation analytic method is adopted to carry out correlation degree analysis on the attenuation sinusoidal quantity atom of each branch line, so that the feature value of each branch line is obtained; and finally, Euclidean distance is obtained by using the feature value of each branch line and the reference values of the fault lines and the non-fault lines, the Euclidean distances are compared, so that the accurate line selection is realized through the comparison of the Euclidean distances. The small current earth fault line selection method for the radial distribution network realizes low calculated amount and high line selection accuracy and is particularly applicable to radial distribution network systems with multiple branch lines.

A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm / min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C. / mm), V / G ranges from 0.16 to 0.18 mm2 / ° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer / G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms / cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C. / min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.

The invention belongs to a dual-cyclone powder coal burner for power plant boilers; the invention comprises a central fan drum with a fuel gun and a Venturi segment as well as a bunching tube; a main nozzle with a flow channel and a Venturi segment inside a diversion collar and with a flared edge; a secondary air nozzle composed of a cyclone generator and a governor valve; a third air nozzle composed of a cyclone generator and a horn-shaped opening, as well as a corresponding air intake. The invention can effectively improve the radial distribution effects of interior thicker and exterior thinner in powder coal concentrate at a main spout of the burner; therefore, the invention has the perfect dense-light separation effect for powder coal; both the secondary and third air flowrate can be regulated conveniently; the flowrate ratio on the dense-light side is RQ being 0.9 to 1.0; the powder coal concentrate ratio on the dense-light side is Rc higher than 4.5; the flowing resistance factor is low and the flow speed distribution at the spout is ideal; the invention adapts to use together with boilers with rather high adaptability for coal specifies and load variations; the invention is characterized by perfect combustion stability, low emission of nitrogen oxides, and effectively avoiding fuel gun abrasion and pitting on the nozzles, as well as long service life and etc.

The present disclosure provides for a chemical reactor which includes elongate chambers defining an arrangement and including first, second, and third elongate chambers adapted to support respective distinct first, second, and third reactor functions associated with respective first, second, and third process feeds, and a distributor arranged in fluidic communication with each of the elongate chambers and for connecting the elongate chambers to at least one fluid source. The distributor is dimensioned to produce a two-dimensional radial distribution of fluidic flow through the first, second, and third elongate chambers with respect to the first, second, and third process feeds. The chemical reactor may further include a monolith catalyst support including an N×M array of channels including the elongated chambers. The elongate chambers and the distributor may manifest an interchangeable cartridge-based system wherein the arrangement of the elongate chambers is selectably detachable from the distributor and replaceable.

A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

There are provided a monocrystalline copper oxide (I) nanowire array manufacturing method using low-temperature electrochemical growth, and more particularly, to a manufacturing method allowing easy vapor deposition at low temperatures and also a monocrystalline copper oxide (I) nanowire array manufacturing method using low-temperature electrochemical growth which retains characteristics such as large-area growth, high-crystallinity nanowire, uniform radial distribution, easy length, radius adjustment, and the like.A monocrystalline copper oxide (I) nanowire array manufacturing method of the present invention includes a step of manufacturing a nanopore alumina layer (anodized alumina (AAO)) from a high-purity aluminum (Al) sheet by using a two-step anodic oxidation method; and a step of manufacturing a monocrystalline copper oxide (I) nanowire array by using the nanopore alumina layer as a nanopore molding flask by means of a low-temperature electrochemical growth method.

The invention discloses a cyclotron isochronism magnetic field shimming method and system. The method includes: firstly, obtaining the radial change amounts of a magnetic pole of a cyclotron in unit edge cutting area magnetic fields at different radius positions through finite element modeling and calculating, and calculating a correlation matrix for representing the cutting vector and the overall magnetic field change amount by employing a plurality of groups of change amounts; and after magnetic measurement of a machined main magnet, reversely calculating the edge radial distribution vector required by cutting according to the isochronous field deviation and the correlation matrix, and machining edges of the magnetic pole by employing a numerical control machine tool after acquisition of a continuous machining coordinate through interpolation. According to the magnetic field shimming method, the radial fringing field effect in a shimming process is considered, the finite element calculating and a practical magnetic measurement result are combined, predictability and high precision are achieved, prediction on a shimming effect of the magnetic field is made based on the correlation matrix, the shimming reliability is further improved, the isochronous field requirement can usually be met after secondary shimming, and the shimming time and the workload are greatly reduced.