10 results about "Ion distribution" patented technology

This invention discloses an image sensor and its manufacturing method. The method includes: Step S1, providing a wafer including a substrate and a plurality of gates formed on the substrate, with adjacent gates forming a gate spacer; the substrate is ion-implanted to form an active / drain region; Step S2, depositing an oxide layer on the surface of the gate spacer and above the gates; Step S3, performing high-temperature rapid annealing on the wafer to activate the active / drain regions; Step S4, depositing a silicon nitride layer on the oxide layer surface using an HCD process. This invention, by depositing a silicon nitride layer using the HCD process, not only avoids lattice damage caused by plasma in existing deposition processes, but also, due to the high process temperature and long processing time of the HCD process, the prolonged and sufficiently high temperature heat treatment effectively improves the uniformity of implanted ion distribution and lattice repair, thereby significantly improving WP performance by approximately 35%.

The utility model relates to semiconductor ion implantation equipment technical field, and disclose a kind of multi-functional high-efficiency boron fluoride ion implantation chamber, including support connecting mechanism, sealing assembly, support connecting mechanism contains chamber main body, internal injection component, multifunctional component assembly interface, upper sealing ring assembly groove, side sealing ring assembly groove, top connecting hole, top auxiliary sealing ring assembly groove, side fixed base, assembly interface sealing ring assembly groove, through slot, toughened glass sheet.The utility model is through the curved surface gradual change flow guide structure of internal injection component, boron fluoride ion distribution in chamber is accurately controlled, ion distribution uniformity is significantly improved, guarantee semiconductor material doping consistency, effectively improve device manufacturing yield, adapt high-precision semiconductor process demand.

The application discloses a buffer cavity structure of a Hall thruster and the Hall thruster, and relates to the technical field of Hall thrusters. The buffer cavity structure comprises: at least two air inlet components, each having an air inlet, and the other end of each air inlet component being connected to a first buffer cavity; the first buffer cavity is used for connecting the air inlet components, and the side wall of the first buffer cavity is provided with a first air hole, so that the first air hole is communicated with a second buffer cavity; the second buffer cavity is provided with a second air hole, and the second buffer cavity is sealed based on the first buffer cavity except the second air hole; and the position of the second air hole does not correspond to the position of the first air hole. The buffer cavity structure optimizes the structure of the air supply buffer cavity of the Hall thruster, so that the air outlet speed of the buffer cavity is more uniform, and the uniformity of ion distribution is improved.

The application provides a nickel plating solution for a circuit board and a preparation method thereof, and steps of the preparation method include the following: mixing a boron source, a nickel source and a complexing agent to obtain a primary mixture, adjusting the pH of the primary mixture to be acidic; adding a chloride medium to the primary mixture, and then adding a copper source to the primary mixture after pre-complexing treatment, and controlling the molar ratio of copper ions to nickel ions to be within a preset range to obtain an intermediate mixture; adding a reducing agent and a deposition regulation component to the intermediate mixture in batches, uniformly mixing under stirring, and then performing filtration and aging treatment to obtain the nickel plating solution for the circuit board. Through the above steps, the nickel plating solution can maintain stable reaction activity and ion distribution during the deposition process, so that the deposition rate and the uniformity of the plating layer thickness are improved.

The application discloses an artificial solid electrolyte interface layer and a preparation method thereof, and a preparation method of a composite piezoelectric film, and comprises the following steps: uniformly mixing an organic copolymer, an inorganic piezoelectric phase and a solvent to obtain a composite precursor solution, uniformly coating the composite precursor solution on an inert substrate, drying after coating is completed, and obtaining a composite film on the inert substrate; applying an electric field to the composite film, simultaneously, performing polarization treatment on the composite film, cooling to room temperature, and obtaining a composite piezoelectric film on the inert substrate. By constructing the composite piezoelectric film with residual polarization orientation on the surface of the negative electrode, the 'field-force coupling' response of the composite piezoelectric film under the action of the electric field and the stress is utilized, the dynamic negative feedback regulation of the lithium metal negative electrode interface electric field and the ion distribution is realized, and thus the dendrite growth is effectively inhibited, the deposition uniformity is improved, and the cycle stability is improved.

This application provides a method, system, and storage medium for simulating interfacial hydrophobicity based on statistical thermodynamics and modified DLVO theory. The method first obtains flotation process parameters; then defines the water molecule ligand structure and energy state at the hydrophobic interface; the bulk phase of the hydrophobic interface is set as the first boundary condition, and the innermost edge closest to the hydrophobic interface is set as the second boundary condition. Combining the hydration of ions and water molecules, the ion distribution is calculated. The contact angle parameters of the innermost interface ligands and the interfacial potential, which change due to ion adsorption, are corrected. The hydrophobic surface potential and double-layer structure are corrected according to ion-induced theory, and the macroscopic physical properties of the interface after hydrophobic correction are calculated. The flotation effect under the parameter conditions is obtained based on the macroscopic physical properties of the interface. This calculation method can quantitatively analyze and numerically simulate interfacial interactions during flotation, providing a theoretical basis for process control in flotation practice.

The application provides a data acquisition method of a chromatography-ion mobility-mass spectrometer, comprising the following steps: obtaining reference data of target parent ion distribution in a sample to be analyzed; based on the reference data, dividing a retention time range into a plurality of retention time sections according to the distribution of the target parent ion at different retention times on a mass-to-charge ratio-ion mobility two-dimensional plane; for each retention time section, corresponding planning acquisition window parameters, the planning process comprises: under the condition of satisfying the maximum frame number constraint in a single acquisition cycle, optimizing the mass-to-charge ratio boundary and the ion mobility range of each acquisition window, maximizing the sum of the target parent ion quantity covered by each acquisition window in the retention time section and the balance of the target parent ion quantity in each acquisition window; during formal acquisition, dynamically switching the acquisition window parameters according to the real-time retention time section, and controlling the mass spectrometer to perform data acquisition. The application can effectively solve the problems of acquisition window load balancing and maximum frame number control, and improve the acquisition efficiency.

This invention discloses a prediction system and method for regulating hydrophobic interface behavior by ion concentration and pH value. The method first collects solution chemical parameters, interface physicochemical parameters, and water molecule microstate parameters; it then calculates the bulk ligand distribution using a water molecule energy state model as the first boundary condition; combined with a ligand evolution model, it obtains the evolution of the number of interfacial ligands and calculates energy evolution parameters including hydrogen bond structure energy, chemical potential, and mixing entropy; it uses an ion-induced model to calculate the ion activity gradient induced by ligand evolution, and accordingly corrects the intrinsic potential and dielectric constant to construct a potential model reflecting the uneven ion distribution; subsequently, it couples the energy evolution and potential models to quantitatively analyze the number of nanobubbles, foam stability, and hydrophobicity; finally, it compares the predicted values ​​with the process target values, automatically generating and executing dosing adjustment commands. This invention significantly improves the accuracy of interfacial behavior prediction and industrial control under high-salt environments.

The utility model discloses a kind of electroplating liquid circulation dispersion mechanism, it includes electroplating pool, the inside of the electroplating pool is provided with spray mechanism, the rear side of electroplating pool inner wall is provided with stirring vortex turbine;The spray mechanism includes two fixed pipes, several spray heads, tee and pump body, the fixed pipe is fixedly connected in the inner wall of electroplating pool, the side of spray head close to fixed pipe is fixedly communicated with fixed pipe, solve the electroplating liquid circulation dispersion mode widely used in most of the existing industry, mainly for traditional pumping cycle, traditional pumping cycle relies on single pipeline and transports electroplating liquid from liquid storage tank to electroplating tank, although this mode can realize the basic circulation of plating solution, the flow path of electroplating liquid in electroplating tank is relatively fixed, it is difficult to form sufficient turbulent flow, leading to additive, metal ion distribution uneven in plating solution, directly affect the gloss and uniformity of plating layer.