386results about "Scanning probe microscopy" patented technology

The embodiment of the invention discloses a scanning NV probe microscope which comprises an atomic force microscopy system used for detecting surface topography information of a sample and an optical detection magnetic resonance system used for detecting surface magnetic field distribution information of the sample, and the atomic force microscopy system comprises a vibration arm and a diamond probe. The optical detection magnetic resonance system comprises an NV color center, a transition excitation light path and a fluorescence detection light path; a sample to be scanned and the transition excitation light path are respectively positioned on two opposite sides of the diamond probe, and the transition excitation light path and the fluorescence detection light path are positioned on the same side of the diamond probe; a first metal coating film is arranged on one side, close to the sample, of the diamond probe and is used for blocking surface fluorescence of the sample. According to the scanning NV probe microscope provided by the embodiment of the invention, the metal coating is arranged at the bottom of the diamond probe to block stray fluorescence from the surface of the sample, so that the problems of low magnetic field imaging signal-to-noise ratio and limited measurement precision of the existing scanning NV probe microscope are solved.

The invention discloses a biological scaffold viscoelasticity evaluation method and related equipment, and aims to overcome the defects of an existing biological scaffold viscoelasticity test method and biological tissue suitability quantitative evaluation. The method comprises the following steps: determining a target implantation part, and acquiring force relaxation experimental data of a biological scaffold by using an atomic force microscope; judging a contact point of the probe and the bracket based on the data; determining the moment when the force signal is stable after the support is compressed to the preset deformation according to the contact point as a force relaxation starting point; calculating the characteristic time when the force value is attenuated to half by taking the starting point as a timing starting point as a microscopic viscoelasticity index; and finally, realizing quantitative evaluation of viscoelasticity suitability by comparing the characteristic time of the stent and the target tissue.

The invention relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of scarcity of experimental data through physical driving simulation and a physics-based rendering algorithm, and provides large-scale field specific training data for a deep learning model. The bidirectional coupling simulation model generates defect morphology prediction data conforming to an etching dynamics law based on real process parameters and material parameters, the prediction data is converted into a synthetic image with real microscopic image statistical characteristics by a physical rendering algorithm, and the quality and consistency of the synthetic data are ensured by an automatic labeling and statistical verification process. According to the method, the number of samples of the ternary association database is multiplied, and extreme process conditions and rare defect modes which are difficult to obtain through experimental collection are covered.

The invention provides a wafer-level cluster coplanar waveguide electrode array, a preparation method and a test system. The coplanar waveguide electrode array comprises an insulating substrate and a plurality of coplanar waveguide electrodes which are arranged in a periodic array; each coplanar waveguide electrode comprises a central transmission section, a probe pad and a gradual transition section; through the design of the central transmission section and the gradual transition section of the coplanar waveguide configuration, the whole-course impedance matching from an external probe to a nano gap is ensured, so that nanosecond and even picosecond-level ultrafast electric pulses can be transmitted to the cluster function unit with extremely low loss and distortion; through overlay and multi-step photoetching and in combination with a negative feedback electromigration technology, a nano gap is manufactured with high success rate, and a cluster function unit is integrated; besides, a test system integrating a coplanar waveguide electrode array and a high-end test instrument is used for exciting and capturing the ultrafast response of a cluster functional unit, and the single write-in time of a cluster device is directly pushed to a subnanosecond level (lt;

The invention relates to the technical field of processing, testing or inspection of aircraft parts, and provides a surface corrosion evaluation method for an aluminum alloy plate with an epoxy coating, which comprises the following steps: acquiring an aluminum alloy plate sample with an epoxy coating at different time after being exposed in a coastal atmospheric environment, collecting two-dimensional closed corrosion area image data of the surface of the sample, and calculating the surface corrosion of the aluminum alloy plate with the epoxy coating according to the two-dimensional closed corrosion area image data; processing the image to extract a closed boundary of the corrosion area; calculating the boundary length of the corrosion area and the included corrosion area, and calculating the fractal dimension of the corrosion area based on the length and the area; according to the method, the correlation model between the fractal dimension of the corrosion area and the exposure corrosion time is established, the interval distribution of the fractal dimension under different corrosion time is determined, the method is used for evaluating the corrosion state and the development trend of the corrosion state, the limitation of parameter evaluation modes such as subjective judgment and single corrosion depth is avoided, and the accuracy and objectivity of a corrosion evaluation result are effectively improved.

The invention discloses a processing defect detection method and system based on a semiconductor integrated circuit, and belongs to the technical field of semiconductor manufacturing data processing and defect detection, and the method comprises the steps: obtaining a high-resolution surface topography scanning matrix, an interlayer stress distribution matrix and a transient electrical response matrix of a specified process layer of a target wafer, and constructing an original feature tensor after correction; generating a multi-dimensional coupling feature matrix, and constructing a spatial adjacency topology network and a cross-layer coupling energy propagation graph model; performing energy iteration deduction on the basis of introducing a current density direction vector and a thermal diffusion coefficient parameter to obtain a potential energy gathering path; a microdefect risk coupling coefficient distribution diagram is generated through time sequence folding mapping and nonlinear coupling calculation, hidden defect characterization parameters are extracted through multi-scale feature compression and abnormal clustering analysis, and defect space positioning and process compensation parameter adjustment suggestion output are achieved; according to the invention, the subcritical microscale latent defect can be identified, and the detection sensitivity and reliability are improved.

The invention relates to an all-solid-state battery thin-layer electrode device for multi-mode in-situ interface research. The all-solid-state battery thin-layer electrode device comprises the following components: a solid electrolyte substrate; the functional thin layer is arranged on the surface of the solid electrolyte substrate; the functional thin layer has conductivity; the functionalized thin layer allows a detection signal of an in-situ characterization technology to effectively penetrate or be reflected from the surface of the functionalized thin layer; the in-situ characterization techniques include atomic force microscopes, optical microscopes, and Raman spectroscopy, X-ray photoelectron spectroscopy, infrared spectroscopy, or X-ray diffraction. The invention provides a universal thin-layer electrode design and system and a thin-layer electrode in-situ imaging and spectroscopic characterization method for all-solid-state battery interface reaction. The objective of the invention is to expose a solid electrolyte-electrode interface reaction process which is difficult to observe in an effective detection range of various characterization technologies so as to realize real-time and in-situ visualization and accurate analysis of a dynamic evolution process of an internal interface of an all-solid-state battery.

A method for manufacturing a component includes steps for providing a surface formed by a material, arranging a mask structure on the surface, and performing a material removal process, whereby material is removed from the surface and deposited on the mask structure where it forms a structure.

Provided are an apparatus and a method for identifying a target position in an atomic microscope. An apparatus is configured to acquire result data identifying the cantilever from an image using an identification model learned to identify the cantilever based on the image photographed by a photographing unit, and calculate a target position from the cantilever using the acquired result data, in which the result data include at least one of bounding box data representing a bounding box including a boundary of the cantilever and segmentation data obtained by segmenting the cantilever and an object other than the cantilever.

The invention provides a glass nanopore probe based on an aptamer and application of the glass nanopore probe in dopamine detection, and belongs to the technical field of electrochemical sensing and scanning probe microscopy. The sensor comprises: a glass nanopore probe, the inner wall of which is modified with a gold layer; a cDNA (complementary deoxyribonucleic acid) single chain is fixed on the gold layer through a gold-sulfur bond; a part of the sequence of the dopamine aptamer is hybridized and combined with the cDNA single chain; wherein the combination of the dopamine and the dopamine aptamer causes the change of an ion current rectification signal of the glass nanopore probe, so that the detection of the dopamine is realized based on the change of the ion current rectification signal of the glass nanopore probe. The invention provides a valuable scheme for developing an aptamer nanopore scanning electrochemical sensor for single cell analysis and researching neurotransmitter-related diseases.

A method of operation of a measurement system includes: generating a microwave excitation towards a sample; scanning the sample along a path at a first vertical position relative to the sample; capturing a first microwave response along the path at the first vertical position based on the microwave excitation; generating a first channel voltage based on the first microwave response; scanning the sample along the path at a second vertical position relative to the sample; capturing a second microwave response along the path at the second vertical position based on the microwave excitation; generating a second channel voltage based on the second microwave response; and determining a voltage difference between the first channel voltage based on the first vertical position and the second channel voltage based on the second vertical position for characterizing the sample.

The invention discloses a multi-mode nanometer measurement system and method based on terahertz scattering type scanning near-field optical microscopy and multi-frequency electrostatic force microscopy, and belongs to the technical field of near-field imaging, the measurement system comprises an AFM main body, a terahertz source, an optical path system, a terahertz detector, a multi-frequency signal generator and two phase-locked amplifiers; terahertz waves emitted by the terahertz source reach the terahertz detector through the optical path system, and near-field optical signals are obtained. The AFM comprises a metal coating probe; the multi-frequency signal generator generates sinusoidal signals with frequencies of omega1 and omega2; a sample is placed on the scanner, and the cantilever beam is controlled to vibrate at the frequency omega 1; an alternating voltage with the frequency of omega 2 is applied to a metal coating probe arranged at the top end of the cantilever beam; laser emitted by the laser is reflected to the light spot position detector through the cantilever beam, and morphology and electrostatic force signals are obtained through the two lock-in amplifiers respectively. According to the invention, a morphology signal, an optical signal and an electrostatic force signal can be synchronously obtained through single scanning.

The application discloses a kind of detection p-type group III nitride activation effect characterization method, the present application is based on kelvin probe force microscope, by preparing metal electrode layer on the surface of p-type group III nitride to form ohmic contact, and metal electrode layer and the sample stage of kelvin probe force microscope form conductive connection, to weaken the influence of other epitaxial layer except p-type group III nitride on test result, according to the difference of p-type group III nitride and metal electrode layer surface potential or the conversion of surface potential is tested to the combination hall test system, realizes the relatively accurate measurement of p-type group III nitride activation effect.The present application method is simple and fast and effective, can accurately determine the change of p-type group III nitride surface potential before and after activation, and will play an important role for the research p-type group III nitride activation method.

The present invention relates to a method for processing three-dimensional measurement data from a scanning probe microscopy system to provide three-dimensional topographic image data, as well as a method for performing scanning probe microscopy, a scanning probe microscopy system, a computer-implemented method, and a computer program product. The method comprises receiving 3D measurement data acquired by the SPM system into a processing device, the 3D measurement data typically mapping the topography of a structure provided by the substrate. The method further comprises digitally constructing model image data using shape contour data of the shape, and a regression operation to fit the model image data to the 3D measurement data. This results in a composite model image of the 3D measurement data that can be used as a topographic image.

The present application relates to a kind of scanning tunneling microscopes and its artificial intelligence auxiliary control method, the scanning tunneling microscope includes sample stage, scanning main body device and shock absorbing frame;The sample stage includes first platform, cross slide and object platform arranged sequentially from bottom to top;The scanning main body device includes second platform, third platform and top platform arranged sequentially from bottom to top, and scanning head main body and driving device, sample stage and scanning main body device are placed on shock absorbing frame as a whole.The present application scanning tunneling microscope has the characteristics of lower cost, easy to build, and the space occupied is small, and its artificial intelligence auxiliary control method, using artificial intelligence is realized Automation control, greatly reduce the difficulty of equipment operation, it is advantageous to the completion of high-throughput scanning.

This application belongs to the field of scanning probe microscopy technology, and particularly relates to a transverse scanning tunneling microscope and a scanning imaging method. The scanning tunneling microscope body includes a base, a first piezoelectric tube, a guide rail, a scanning imaging unit, and a sample stage. The fixed end of the first piezoelectric tube is fixedly mounted on the base; the free end of the first piezoelectric tube is fixedly connected to the lower surface of the guide rail. The sample stage is perpendicular to the guide rail and fixedly mounted at one end of the upper surface of the guide rail. The scanning imaging unit is placed on the upper surface of the guide rail. A probe is provided on the scanning imaging module, with the probe tip pointing towards the sample fixed on the sample stage. The scanning imaging unit drives the probe to perform insertion, retraction, or scanning imaging relative to the sample stage while the magnetic field direction is parallel to the sample surface. This application enables efficient scanning imaging of the sample surface when the magnetic field direction is parallel to the sample surface.

A detection device to be inserted in a holder of a scanning probe microscope is provided. The detection device comprises a probe comprising a support, a lever extending from the support, a tip positioned at one end of the lever, opposite from said support. The probe has dimensions that are small in comparison with the holder and the detection device comprises an adapter secured to the probe so as to adapt said probe to fit the holder. The adapter is secured to the probe by bonding comprising at least one adhesive or by assembly comprising a filler material used to secure said adapter to said probe during a brazing operation.

This disclosure provides an electronic control readout system and method for quantum diamond atomic force microscopy. The system includes: a system control readout module, a magnetic measurement algorithm module, and a magnetic measurement control and readout module. The magnetic measurement control and readout module is used to respond to the control signal of the system control readout module by emitting a laser pulse sequence and a microwave pulse sequence of a preset frequency to the quantum diamond probe located at the i-th pixel position of the sample to be tested, and then acquiring the analog fluorescence signal of the quantum diamond probe at the i-th pixel position and outputting the digital fluorescence signal of the i-th pixel. The magnetic measurement algorithm module is used to respond to the control signal of the system control readout module by obtaining the resonance frequency at the i-th pixel position and the preset frequency at the i+1-th pixel position according to the fluorescence photon number of the i-th pixel corresponding to the digital fluorescence signal of the i-th pixel, the resonance frequency at the (i-1)-th pixel position, and a microwave frequency lookup table.

A scanning probe microscope (10) is described, comprising a probe (1) with a cantilever (11) carrying a tip (12), the scanning probe microscope configured to generate a first actuating motion changing a distance of the tip (12) with respect to a sample surface, a detector (4) configured to detect a tip position and to output a tip position signal, a control circuit (5) configured to generate a first control signal using the tip position signal, the scanning probe microscope being configured to generate a second actuating motion adapting a distance between the probe (1) and the sample surface using the first control signal, wherein the control circuit (5) is configured to generate a second control signal, the scanning probe microscope being configured to generate, using the second control signal, a third actuating motion at least partially opposing detachment-induced oscillations of the cantilever (11) induced by detaching of the tip (12) from the sample surface while retracting the probe (1).

The invention discloses an online in-situ characterization method of a chemical mechanical polishing through silicon via heterostructure, and belongs to the technical field of chip manufacturing. According to the TSV heterostructure sample, through the remarkable difference of different components of a TSV heterostructure sample matrix, an insulating layer, a barrier layer and a transmission layer in refractive index, work function and conductivity, a PiFM is taken as a core, a KPFM and a CAFM are combined, and the TSV heterostructure sample can be detected on the same platform by detecting light induction force, surface potential and current signals at a needle tip-sample position. And the real-time in-situ measurement of the TSV sample surface appearance height, roughness and interface component change is realized. According to the method, the light, electricity and force response differences between TSV heterostructure materials are fully utilized, dynamic feedback of the structure morphology and components in the CMP process is achieved, and support is provided for nano-scale and even atomic-scale polishing precision control.

The invention relates to the field of wafer detection, in particular to a wafer detection device and method, the device comprises a scanning electron microscope, an atomic force microscope and piezoelectric ceramics, the scanning electron microscope comprises a lens cone, an objective lens and a sample chamber, the objective lens is arranged in the sample chamber, and a sample table for bearing a wafer to be detected is arranged in the sample chamber; the objective lens is used for acquiring a two-dimensional morphology image of the surface of the wafer to be detected; the atomic force microscope is arranged in the sample chamber, the atomic force microscope is not in contact with the sample table, the atomic force microscope comprises a cantilever and a probe installed at the end of the cantilever, the probe is used for obtaining the three-dimensional structure of a wafer to be detected, and the piezoelectric ceramic is arranged at the end, away from the probe, of the cantilever; and the piezoelectric ceramic pressure realizes fine adjustment of the probe in horizontal and height directions through directional deformation. Vibration of the sample table and transmission of heat to the atomic force microscope are effectively isolated, and measurement errors caused by mismatch of vibration noise and thermal expansion are reduced. Precise control of the position of the probe is realized through piezoelectric ceramics.

The application provides a feature region identification method and system based on an atomic force microscope (AFM) topography, and the method comprises the following steps: acquiring an AFM topography data matrix of a nano preparation region; dividing the AFM topography data matrix into a plurality of sub-regions corresponding to preparation structures according to the number of the preparation structures; performing a region positioning step on each sub-region to determine the start and end ranges of a feature region representing a nano structure in a vertical direction in each sub-region; performing a center line fitting step in the start and end ranges of the feature region, fitting feature points in multiple rows of data to obtain a feature center line representing an extension direction of the nano structure; and performing a row-by-row identification operation on multiple rows of topography data in the feature region along the feature center line to identify feature region boundary points in each row of data. The technical scheme provided by the application realizes batch, automatic and high-precision identification of a plurality of nano structure feature regions in a complex AFM topography.

The application discloses a dielectric high-space-resolution trap imaging method and system based on a scanning probe microscope, and the method comprises the following steps: recording a sample surface topography image sequence and a surface potential image sequence after removing a voltage; correcting image offset according to the surface topography image sequence, and extracting surface potential decay data of each pixel point from the corrected surface potential image sequence; determining trap distribution information of each pixel point by fitting and calculation according to the surface potential decay data of each pixel point; and forming deep and shallow trap energy level peak value images and / or deep and shallow trap density peak value images corresponding to the film surface topography according to the trap distribution information of all pixel points and the original positions of the pixel points. The method directly images the trap characteristics of a sample at a nanometer scale, and has the advantages of high spatial resolution and intuitive comparison.

The invention relates to a method and system for operating an ultrasound acoustic microscopy system equipped with a probe tip. The method involves determining the condition of the probe tip during and / or between ultrasound acoustic microscopy measurements and, if necessary, selectively conditioning the tip using an integrated tip conditioning unit. The conditioning process helps maintain or enhance the target performance characteristics of the probe tip, ensuring optimal imaging quality. The system comprises a probe tip for contacting a sample, an ultrasound generator for emitting acoustic signals, a detector for detecting echoes, and an evaluation module for assessing the tip's condition. The control system activates the tip conditioning unit selectively to ensure consistent imaging performance.

The application provides a transmission type optical cryogenic probe station, which mainly comprises a vacuum cavity and a detection frame, the vacuum cavity is provided with a flange opening for light transmission; the detection frame is mainly designed by embedding a bearing and a sample supporting plate, the sample supporting plate is controlled by a motor to rotate by any number of turns, and a sample groove is designed in the form of a through hole to ensure that light can pass through the sample groove. The application realizes transmission type optical detection, when the detection sample needs to be replaced during the detection process, the detection sample can be replaced by only controlling the sample supporting plate to rotate, without manually changing the probe position, without re-performing the complicated processes of rewarming, back pressure, vacuumizing and cooling, thereby greatly reducing the complexity of the detection process and shortening the detection time.

This invention relates to the field of microscopy application technology, and in particular to a SICM scanning control method and related device based on feedback quantization. The method acquires the test height, initial scanning speed, initial safe height of the test point, first speed adjustment start point, and second speed adjustment start point of the test point. It controls the scanning probe to descend from the initial safe height of the test point to the first speed adjustment start point at the initial scanning speed, intervenes with first dynamic speed adjustment, continues to descend to the second speed adjustment start point, intervenes with second dynamic speed adjustment, and continues descending until the probe detects a sudden change in ion current and stops descending. This control method solves the problems of low scanning time resolution and poor safety in existing scanning ion conductivity microscopes by setting an initial speed adjustment point that dynamically adjusts the speed according to the probe's descent position.

The present document relates to a probe chip for use in a scanning probe microscopy device for holding a probe mounted thereon. The probe chip includes a carrier element having a probe bearing side which is configured for bearing the probe to be extending therefrom as an integral or mounted part thereof. The carrier element further comprises a mounting side configured for mounting the probe chip onto a scan head of the scanning probe microscopy device, wherein the mounting side extends in a longitudinal and lateral direction of the carrier element to be substantially flat. The carrier element towards the probe bearing side thereof is truncated in the lateral direction on either side of a longitudinal axis through a center of the carrier element, such as to enable a rotation of the probe chip over a rotation angle around the longitudinal axis in use when the longitudinal axis is inclined at an inclination angle relative to a substrate surface to be scanned and when the probe is in a measurement position relative to the substrate surface.

The present invention relates to a method for referencing a near-field measurement, e.g. in a scanning probe microscope.

The invention discloses a high-beam ion soft landing device based on a multistage difference technology, and belongs to the technical field of surface scientific sample preparation. The device comprises an electrospray ionization source, an ion transmission device, an ion deposition device and a sample transfer device which are connected in sequence. The ionization source couples high voltage to the solution through the spray needle fixing mechanism integrating the three-dimensional displacement table and the metal conductive connecting piece, and electrified micro-droplets are generated. The transmission device adopts a combination of a four-stage differential air exhaust cavity and a replaceable ion lens with a gradually increased aperture, so that efficient focusing and transmission of ions are realized, and desolvation is completed through a heating capillary tube. The deposition device drives a multi-clamping-groove vertical sample frame through a magnetic coupling sample transfer rod, and applies a deceleration electric field to a sample support by using an external bias power supply, so that ions are softly landed on a substrate with low kinetic energy. According to the invention, an expensive mass spectrum assembly is abandoned, and through linkage of all parts, high-flux and high-integrity clean deposition of macromolecules and heat-sensitive samples is realized while the cost is remarkably reduced.

The invention discloses an AFM (atomic force microscope) and a piezoelectric ceramic driving method applied to high-speed feedback of an AFM (atomic force microscope) system, interaction force borne by a probe is enabled to be the same as preset interaction force by controlling the motion depth of piezoelectric ceramic, and the motion depth change of hardness detection piezoelectric ceramic is controlled to accord with a sine curve. Therefore, the movement depth change of the probe is a superposition waveform curve of the movement depth change of the two piezoelectric ceramics. Therefore, surface fluctuation detection and hardness detection of the to-be-detected surface are realized. According to the invention, the motion depth changes of the two piezoelectric ceramics are controlled to be non-interfering motion depth changes, so that the motion depth change (i.e., sinusoidal vibration) for detecting the viscosity of the surface to be detected and the motion depth change for feedback tracking of the appearance of the surface to be detected are two non-interfering motion depth changes. And the stroke of feedback tracking of the to-be-measured surface topography is ensured. Therefore, under the condition that the scanning speed of the atomic force microscope is high, a sample with large surface fluctuation can be measured.