671results about "Scanning probe microscopy" patented technology

The invention discloses a scanning electrochemical microscope in-situ stress corrosion testing device and method, and belongs to the technical field of material stress corrosion testing, and the device comprises a base, a power transmission module, a clamping module, a corrosion module, a signal acquisition module and a scanning electrochemical microscope module. Slow strain rate stretching of a sample is achieved through a servo motor, a planetary gear speed reducer and a transmission mechanism, the clamping module is integrated with a force sensor to monitor loads in real time, the corrosion module provides a temperature-controllable corrosion environment, and the scanning electrochemical microscope module achieves electrochemical scanning of the surface of the sample. The device can synchronously obtain a load-deformation curve, corrosion morphology and microcell electrochemical information under stress-corrosion-temperature multi-field coupling, and provides an effective technical means for deeply researching a stress corrosion mechanism of a material. The method comprises the steps of sample installation, corrosion solution preparation, electrode arrangement, tensile test, electrochemical scanning and the like, and has the advantages of simplicity and convenience in operation, comprehensive data, high precision and the like.

The invention discloses a method for characterizing physical properties of a single-layer graphene / semiconductor heterojunction. The method comprises the following steps: providing a physical property model about a single-layer graphene-semiconductor heterojunction, wherein influence factors comprise the change of Fermi level of single-layer graphene after the heterojunction is formed and the influence of an interface state on a formation position of a contact potential difference; extracting heterojunction electrical characteristics by using a Kelvin probe force microscope; the interface layer spacing is obtained; and importing the heterojunction electrical characteristics and the interface interlayer spacing into a physical characteristic model, and analyzing to obtain physical characteristics. According to the new theoretical model and the method for realizing the nondestructive characterization of the physical characteristics of the heterojunction by using the Kelvin probe microscope based on the theoretical model, the influence of the change of the Fermi level of the single-layer graphene and the interface state on the formation position of the contact potential difference is fully considered; key interface physical properties, especially built-in potential and depletion region characteristics which are crucial to device performance, can be accurately analyzed.

The invention relates to the technical field of mineralogy, in particular to a complex iron mineral distinguishing and quantifying method and an iron mineral content analysis method, which innovatively combines chemical dissolution, automatic mineralogy analysis and a micro-area magnetic verification technology to realize distinguishing and quantifying of complex iron minerals. According to the analysis method, a closed and mutual verification analysis system is formed, acid treatment of carbonate, automatic mineralogy analysis of residual minerals, micro-area magnetic verification correction of misjudgment of maghemite, element surface scanning verification of mineralogy total quantification accuracy and a final calculation result, and closed verification of the total iron content of chemical analysis are combined, and therefore the comprehensive performance of the magnetic separation system is improved. The reliability of a final result is ensured and standardized popularization and application are facilitated.

The embodiment of the invention discloses a scanning NV probe microscope which comprises an atomic force microscopy system used for detecting surface topography information of a sample and an optical detection magnetic resonance system used for detecting surface magnetic field distribution information of the sample, and the atomic force microscopy system comprises a vibration arm and a diamond probe. The optical detection magnetic resonance system comprises an NV color center, a transition excitation light path and a fluorescence detection light path; a sample to be scanned and the transition excitation light path are respectively positioned on two opposite sides of the diamond probe, and the transition excitation light path and the fluorescence detection light path are positioned on the same side of the diamond probe; a first metal coating film is arranged on one side, close to the sample, of the diamond probe and is used for blocking surface fluorescence of the sample. According to the scanning NV probe microscope provided by the embodiment of the invention, the metal coating is arranged at the bottom of the diamond probe to block stray fluorescence from the surface of the sample, so that the problems of low magnetic field imaging signal-to-noise ratio and limited measurement precision of the existing scanning NV probe microscope are solved.

The invention discloses a biological scaffold viscoelasticity evaluation method and related equipment, and aims to overcome the defects of an existing biological scaffold viscoelasticity test method and biological tissue suitability quantitative evaluation. The method comprises the following steps: determining a target implantation part, and acquiring force relaxation experimental data of a biological scaffold by using an atomic force microscope; judging a contact point of the probe and the bracket based on the data; determining the moment when the force signal is stable after the support is compressed to the preset deformation according to the contact point as a force relaxation starting point; calculating the characteristic time when the force value is attenuated to half by taking the starting point as a timing starting point as a microscopic viscoelasticity index; and finally, realizing quantitative evaluation of viscoelasticity suitability by comparing the characteristic time of the stent and the target tissue.

The invention relates to the technical field of industrial detection, and discloses a lithium niobate metasurface defect intelligent identification method based on reactive ion beam etching, which systematically solves the problem of scarcity of experimental data through physical driving simulation and a physics-based rendering algorithm, and provides large-scale field specific training data for a deep learning model. The bidirectional coupling simulation model generates defect morphology prediction data conforming to an etching dynamics law based on real process parameters and material parameters, the prediction data is converted into a synthetic image with real microscopic image statistical characteristics by a physical rendering algorithm, and the quality and consistency of the synthetic data are ensured by an automatic labeling and statistical verification process. According to the method, the number of samples of the ternary association database is multiplied, and extreme process conditions and rare defect modes which are difficult to obtain through experimental collection are covered.

The invention discloses a method for judging whether seepage phase change and leakage occur in multi-scale static seal, which comprises the following steps of: 1, acquiring positive pressure sigma under the working condition of a static seal product by utilizing a force sensor or a finite element simulation method; step 2, obtaining height distribution of the contact surface of the static sealing product by using a high-precision microscope, and obtaining characteristic parameters; 3, according to the contact basic equation, solving the relation between the contact area and the positive pressure and the generalized diffusion variance; 4, for a certain specific analysis scale, giving a leakage critical characteristic line L of a corresponding critical contact area ratio; 5, in a characteristic state plane, namely a roughness hRMS-fractal index H plane, according to the relative position of the characteristic parameters and the leakage critical characteristic line L, whether leakage occurs or not is judged; the problem that a traditional sealing performance evaluation method depends on an empirical threshold and cannot quantitatively represent multi-scale contact characteristics and seepage phase change critical conditions is solved.

The invention provides a wafer-level cluster coplanar waveguide electrode array, a preparation method and a test system. The coplanar waveguide electrode array comprises an insulating substrate and a plurality of coplanar waveguide electrodes which are arranged in a periodic array; each coplanar waveguide electrode comprises a central transmission section, a probe pad and a gradual transition section; through the design of the central transmission section and the gradual transition section of the coplanar waveguide configuration, the whole-course impedance matching from an external probe to a nano gap is ensured, so that nanosecond and even picosecond-level ultrafast electric pulses can be transmitted to the cluster function unit with extremely low loss and distortion; through overlay and multi-step photoetching and in combination with a negative feedback electromigration technology, a nano gap is manufactured with high success rate, and a cluster function unit is integrated; besides, a test system integrating a coplanar waveguide electrode array and a high-end test instrument is used for exciting and capturing the ultrafast response of a cluster functional unit, and the single write-in time of a cluster device is directly pushed to a subnanosecond level (lt;

The invention relates to the field of atomic force microscope probe cleaning, and provides a method for cleaning an atomic force microscope probe and detecting the cleaning effect, and the method for cleaning the atomic force microscope probe comprises the steps: providing a cleaning object with a tip, and the diameter of the tip of the cleaning object is not greater than the diameter of the tip of the probe of an atomic force microscope; starting the atomic force microscope, enabling the probe and the cleaning object to move relatively, enabling the tip of the cleaning object to face the tip of the probe, and enabling the tip of the cleaning object and the tip of the probe to interact with each other so as to remove pollutants at the tip of the probe. The method can be used for efficiently and conveniently cleaning pollutants at the tip of the probe of the atomic force microscope, so that the service life of the probe can be prolonged, and various measurement performance indexes related to the probe can be improved; and the probe can be more conveniently and widely applied to scanning of various samples, and the application value is high.

A measurement system includes: a first laser device for outputting a pump light as a pulse laser in response to an input first signal; a second laser device for outputting a probe light as a pulse laser in response to an input second signal; a trigger generator and delay time controller for inputting the first signal and the second signal to the first laser and the second laser, repeatedly inputting the first signal and the second signal by switching a variable delay value which is a difference between a timing of inputting the first signal to the first laser and a timing of inputting the second signal to the second laser in a plurality of ways, and outputting a reference signal to a lock-in amplifier when switching the variable delay value; an auxiliary optical system for guiding the pump light and the probe light to sample; a cantilever having an probe tip disposed proximate to the sample; and a controller for applying a periodically varying voltage to the cantilever and outputting a change amount signal which is a voltage or a current corresponding to a change in the resonance frequency of the cantilever, wherein the lock-in amplifier measures the change amount signal based on reference signal.

The invention relates to a compatible microscopic surface scanning system, which comprises a microscopic imaging system used for observing and confirming the position of a detected sample; the plane coarse movement displacement table has an X movement direction and a Y movement direction and is used for realizing coarse positioning on the sample and moving the sample to the position below the probe; the Z-axis approaching displacement table and the bracket thereof are used for fixing a signal acquisition circuit and realizing approaching of the probe to the sample; the nanometer displacement table and the controller thereof have movement in the X axis direction, the Y axis direction and the Z axis direction and are used for completing plane scanning in the X direction and the Y direction, and meanwhile the Z axis is used for further controlling the distance between the probe and the surface of the sample within a range of several nanometers after the scanning probe passes through the coarse proximity; the two signal acquisition circuits are respectively used for acquiring AFM signals and STM signals and transmitting the AFM signals and the STM signals to the signal acquisition equipment and the upper computer; and the signal acquisition equipment and the upper computer software are used for reading, processing and storing the signals collected by the signal acquisition circuit. The design scheme of moving the probe in the Z axis and moving the sample in the XYZ two-stage three axes is adopted, two signal acquisition circuits are compatible, the functions of AFM and STM are achieved at the same time through one set of equipment, scanning information of the microscopic surface of the sample is detected in multiple ways, the equipment cost is saved, the detection efficiency is improved, and the detection cost is reduced. And the multi-angle analysis on the microstructure of the sample is enhanced.

The invention relates to the technical field of processing, testing or inspection of aircraft parts, and provides a surface corrosion evaluation method for an aluminum alloy plate with an epoxy coating, which comprises the following steps: acquiring an aluminum alloy plate sample with an epoxy coating at different time after being exposed in a coastal atmospheric environment, collecting two-dimensional closed corrosion area image data of the surface of the sample, and calculating the surface corrosion of the aluminum alloy plate with the epoxy coating according to the two-dimensional closed corrosion area image data; processing the image to extract a closed boundary of the corrosion area; calculating the boundary length of the corrosion area and the included corrosion area, and calculating the fractal dimension of the corrosion area based on the length and the area; according to the method, the correlation model between the fractal dimension of the corrosion area and the exposure corrosion time is established, the interval distribution of the fractal dimension under different corrosion time is determined, the method is used for evaluating the corrosion state and the development trend of the corrosion state, the limitation of parameter evaluation modes such as subjective judgment and single corrosion depth is avoided, and the accuracy and objectivity of a corrosion evaluation result are effectively improved.

The invention relates to an alkali metal gas chamber anti-relaxation self-assembly molecular coating adsorption energy quantification method, which finally realizes the physical quantification of the anti-relaxation coating adsorption energy by establishing a contact angle and surface topography collaborative characterization model and combining an adsorption-desorption dynamic formula, and is characterized by comprising the following steps: 1) establishing a contact angle and surface topography collaborative characterization model; depositing organosilane on a gas chamber glass substrate by adopting a liquid phase self-assembly method to form an anti-relaxation coating sample; step 2, selecting a plurality of measuring points on the anti-relaxation coating sample, dropping a 1 [mu] L ultrapure water liquid drop on each measuring point, determining a polarization retention angle of each measuring point according to the liquid drop height and the liquid drop substrate radius obtained by a contact angle measuring instrument, and scanning a local area of the corresponding measuring point by using an atomic force microscope (AFM), extracting an arithmetic mean value Ra of the surface roughness parameter and a root-mean-square value Rq of the surface roughness parameter as quantitative indexes of the polarization maintaining cross section; and step 3, taking free energy formed by the molecular layer of the coating as coating adsorption energy delta G.

The utility model discloses an in-situ illumination KPFM testing device. The in-situ illumination KPFM testing device comprises a KPFM tester body, the KPFM tester body comprises a laser detector, a reflective mirror, a spectroscope, a laser and a sample table; laser emitted by the laser device sequentially passes through the spectroscope, the sample table and the reflective mirror and enters the laser detector; an additional light source is arranged at a position close to the sample table, and the distance between a light outlet of the additional light source and the sample table is 3-5cm; and a light filtering assembly is arranged at an inlet of the laser detector. According to the testing device, interference factors in the testing process can be effectively reduced while the authenticity of the testing environment is kept, so that the testing efficiency and precision are improved, and the accuracy and reliability of in-situ illumination testing through the KPFM are remarkably improved.

The invention relates to a terahertz near-field imaging light path calibration device and a terahertz near-field imaging light path calibration method. The device comprises a first visible light source, a second visible light source, a first collimation visible light source, a second collimation visible light source, a first light path collimation system, a second light path collimation system, a light path adjusting system, a circular reflector, a terahertz quantum cascade laser, a thermal detection array, a terahertz quantum well detector and an atomic force microscope platform. The THz laser source and the detector are simulated through the divergent visible light source, the lifting position point of the light path is calculated, light beams can be accurately coupled to the position of the needle point after being focused, errors caused by improper light path adjustment are reduced, meanwhile, the overlapping effect of light spots at the needle point is calibrated through the circular reflector and the thermal detection array, and the detection accuracy is improved. And the thermal detection array is used for observing the convergence effect of THz reflection light spots at the position of the detector, so that the effective focusing and coupling efficiency of THz waves in a near-field region of a probe sample can be improved.

The invention discloses a processing defect detection method and system based on a semiconductor integrated circuit, and belongs to the technical field of semiconductor manufacturing data processing and defect detection, and the method comprises the steps: obtaining a high-resolution surface topography scanning matrix, an interlayer stress distribution matrix and a transient electrical response matrix of a specified process layer of a target wafer, and constructing an original feature tensor after correction; generating a multi-dimensional coupling feature matrix, and constructing a spatial adjacency topology network and a cross-layer coupling energy propagation graph model; performing energy iteration deduction on the basis of introducing a current density direction vector and a thermal diffusion coefficient parameter to obtain a potential energy gathering path; a microdefect risk coupling coefficient distribution diagram is generated through time sequence folding mapping and nonlinear coupling calculation, hidden defect characterization parameters are extracted through multi-scale feature compression and abnormal clustering analysis, and defect space positioning and process compensation parameter adjustment suggestion output are achieved; according to the invention, the subcritical microscale latent defect can be identified, and the detection sensitivity and reliability are improved.

The invention relates to a method for measuring wafer surface energy in hybrid bonding based on a chemically modified probe. The method comprises the following steps: carrying out surface pretreatment on an atomic force microscope probe and a wafer sample; constructing same functional group modification layers on the surfaces of the microscope probe and the wafer sample; the bending sensitivity, the elastic coefficient and the curvature radius of the probe are calibrated; acquiring a force-distance curve based on interaction between the probe covered by the functional group modification layer and the surface of the wafer sample, and calculating initial adhesion work based on the force-distance curve; and performing error correction on the initial adhesion work by using the surface energy measured by a contact angle method of a standard wafer sample, and establishing a quantitative mapping relation between the corrected adhesion work and the bonding strength. Compared with the prior art, the method has the advantages that the probe is subjected to functional group modification, the adhesive force of the surface of the sample is measured through the functionalized probe, and the surface energy of the wafer sample in mixed bonding is calculated in mixed bonding, so that the subsequent bonding strength of the sample is estimated.

The invention discloses a method for measuring the thickness of a thin film through an atomic force microscope assisted by a low-power optical microscope, which comprises the following steps of: pre-aligning the tip of a probe of the atomic force microscope with a step of a sample to be measured by virtue of the low-power optical microscope, and then controlling the tip to descend to a first height of the surface of the step; the needle tip is lifted under real-time monitoring, the needle tip and the surface of the sample are located in the focal plane range of the low-power optical microscope, the position of the probe is adjusted, and the projection of the needle tip is located over the step to complete accurate positioning. Starting a linear scanning mode, carrying out single-line scanning in a direction perpendicular to the step extension direction, dynamically adjusting scanning range parameters until a scanning curve presents a step-shaped characteristic, adjusting the scanning curve to a view center, switching a line-by-line scanning mode to obtain three-dimensional shape data, and obtaining the film thickness of the to-be-detected sample based on the three-dimensional shape data. According to the method, the probe and sample positioning process is optimized, scanning parameters and a data processing method are reasonably set, and the problems of long time consumption and low precision of measuring the film thickness by the atomic force microscope under the assistance of the low-power light microscope are effectively solved.

The invention provides a light-induced force microscope system and an application method thereof. The system comprises a first laser, an atomic force microscope probe, a photosensitive detector, a first lock-in amplifier, a control box, piezoelectric ceramic, a second lock-in amplifier, a semiconductor laser, a light path system, a sample table, a piezoelectric scanning tube and a host. According to the light-induced force microscope system, the semiconductor laser is used, sine wave modulation is directly carried out on the semiconductor laser through the oscillator in the lock-in amplifier, and the light-induced force microscope system can accurately measure light force information at a needle point-sample position by using a common silicon needle point probe in the atmosphere. By analyzing the light force information, the light-induced force component can be qualitatively identified, and the rigidity, polarizability and other property information of the material can be reflected. According to the invention, accurate measurement of the light force signal on the surface of the two-dimensional material is realized, and a technology which is economical, simple in structure and convenient to operate is provided for identifying components and defects of the two-dimensional material in electronic devices, optoelectronic elements and sensors.

The invention relates to an all-solid-state battery thin-layer electrode device for multi-mode in-situ interface research. The all-solid-state battery thin-layer electrode device comprises the following components: a solid electrolyte substrate; the functional thin layer is arranged on the surface of the solid electrolyte substrate; the functional thin layer has conductivity; the functionalized thin layer allows a detection signal of an in-situ characterization technology to effectively penetrate or be reflected from the surface of the functionalized thin layer; the in-situ characterization techniques include atomic force microscopes, optical microscopes, and Raman spectroscopy, X-ray photoelectron spectroscopy, infrared spectroscopy, or X-ray diffraction. The invention provides a universal thin-layer electrode design and system and a thin-layer electrode in-situ imaging and spectroscopic characterization method for all-solid-state battery interface reaction. The objective of the invention is to expose a solid electrolyte-electrode interface reaction process which is difficult to observe in an effective detection range of various characterization technologies so as to realize real-time and in-situ visualization and accurate analysis of a dynamic evolution process of an internal interface of an all-solid-state battery.

A method for manufacturing a component includes steps for providing a surface formed by a material, arranging a mask structure on the surface, and performing a material removal process, whereby material is removed from the surface and deposited on the mask structure where it forms a structure.

Provided are an apparatus and a method for identifying a target position in an atomic microscope. An apparatus is configured to acquire result data identifying the cantilever from an image using an identification model learned to identify the cantilever based on the image photographed by a photographing unit, and calculate a target position from the cantilever using the acquired result data, in which the result data include at least one of bounding box data representing a bounding box including a boundary of the cantilever and segmentation data obtained by segmenting the cantilever and an object other than the cantilever.

The invention provides a glass nanopore probe based on an aptamer and application of the glass nanopore probe in dopamine detection, and belongs to the technical field of electrochemical sensing and scanning probe microscopy. The sensor comprises: a glass nanopore probe, the inner wall of which is modified with a gold layer; a cDNA (complementary deoxyribonucleic acid) single chain is fixed on the gold layer through a gold-sulfur bond; a part of the sequence of the dopamine aptamer is hybridized and combined with the cDNA single chain; wherein the combination of the dopamine and the dopamine aptamer causes the change of an ion current rectification signal of the glass nanopore probe, so that the detection of the dopamine is realized based on the change of the ion current rectification signal of the glass nanopore probe. The invention provides a valuable scheme for developing an aptamer nanopore scanning electrochemical sensor for single cell analysis and researching neurotransmitter-related diseases.

A method of operation of a measurement system includes: generating a microwave excitation towards a sample; scanning the sample along a path at a first vertical position relative to the sample; capturing a first microwave response along the path at the first vertical position based on the microwave excitation; generating a first channel voltage based on the first microwave response; scanning the sample along the path at a second vertical position relative to the sample; capturing a second microwave response along the path at the second vertical position based on the microwave excitation; generating a second channel voltage based on the second microwave response; and determining a voltage difference between the first channel voltage based on the first vertical position and the second channel voltage based on the second vertical position for characterizing the sample.

The invention discloses a multi-mode nanometer measurement system and method based on terahertz scattering type scanning near-field optical microscopy and multi-frequency electrostatic force microscopy, and belongs to the technical field of near-field imaging, the measurement system comprises an AFM main body, a terahertz source, an optical path system, a terahertz detector, a multi-frequency signal generator and two phase-locked amplifiers; terahertz waves emitted by the terahertz source reach the terahertz detector through the optical path system, and near-field optical signals are obtained. The AFM comprises a metal coating probe; the multi-frequency signal generator generates sinusoidal signals with frequencies of omega1 and omega2; a sample is placed on the scanner, and the cantilever beam is controlled to vibrate at the frequency omega 1; an alternating voltage with the frequency of omega 2 is applied to a metal coating probe arranged at the top end of the cantilever beam; laser emitted by the laser is reflected to the light spot position detector through the cantilever beam, and morphology and electrostatic force signals are obtained through the two lock-in amplifiers respectively. According to the invention, a morphology signal, an optical signal and an electrostatic force signal can be synchronously obtained through single scanning.

The application discloses a kind of detection p-type group III nitride activation effect characterization method, the present application is based on kelvin probe force microscope, by preparing metal electrode layer on the surface of p-type group III nitride to form ohmic contact, and metal electrode layer and the sample stage of kelvin probe force microscope form conductive connection, to weaken the influence of other epitaxial layer except p-type group III nitride on test result, according to the difference of p-type group III nitride and metal electrode layer surface potential or the conversion of surface potential is tested to the combination hall test system, realizes the relatively accurate measurement of p-type group III nitride activation effect.The present application method is simple and fast and effective, can accurately determine the change of p-type group III nitride surface potential before and after activation, and will play an important role for the research p-type group III nitride activation method.

The present invention relates to a method for processing three-dimensional measurement data from a scanning probe microscopy system to provide three-dimensional topographic image data, as well as a method for performing scanning probe microscopy, a scanning probe microscopy system, a computer-implemented method, and a computer program product. The method comprises receiving 3D measurement data acquired by the SPM system into a processing device, the 3D measurement data typically mapping the topography of a structure provided by the substrate. The method further comprises digitally constructing model image data using shape contour data of the shape, and a regression operation to fit the model image data to the 3D measurement data. This results in a composite model image of the 3D measurement data that can be used as a topographic image.

The present application relates to a kind of scanning tunneling microscopes and its artificial intelligence auxiliary control method, the scanning tunneling microscope includes sample stage, scanning main body device and shock absorbing frame;The sample stage includes first platform, cross slide and object platform arranged sequentially from bottom to top;The scanning main body device includes second platform, third platform and top platform arranged sequentially from bottom to top, and scanning head main body and driving device, sample stage and scanning main body device are placed on shock absorbing frame as a whole.The present application scanning tunneling microscope has the characteristics of lower cost, easy to build, and the space occupied is small, and its artificial intelligence auxiliary control method, using artificial intelligence is realized Automation control, greatly reduce the difficulty of equipment operation, it is advantageous to the completion of high-throughput scanning.

This application belongs to the field of scanning probe microscopy technology, and particularly relates to a transverse scanning tunneling microscope and a scanning imaging method. The scanning tunneling microscope body includes a base, a first piezoelectric tube, a guide rail, a scanning imaging unit, and a sample stage. The fixed end of the first piezoelectric tube is fixedly mounted on the base; the free end of the first piezoelectric tube is fixedly connected to the lower surface of the guide rail. The sample stage is perpendicular to the guide rail and fixedly mounted at one end of the upper surface of the guide rail. The scanning imaging unit is placed on the upper surface of the guide rail. A probe is provided on the scanning imaging module, with the probe tip pointing towards the sample fixed on the sample stage. The scanning imaging unit drives the probe to perform insertion, retraction, or scanning imaging relative to the sample stage while the magnetic field direction is parallel to the sample surface. This application enables efficient scanning imaging of the sample surface when the magnetic field direction is parallel to the sample surface.

A detection device to be inserted in a holder of a scanning probe microscope is provided. The detection device comprises a probe comprising a support, a lever extending from the support, a tip positioned at one end of the lever, opposite from said support. The probe has dimensions that are small in comparison with the holder and the detection device comprises an adapter secured to the probe so as to adapt said probe to fit the holder. The adapter is secured to the probe by bonding comprising at least one adhesive or by assembly comprising a filler material used to secure said adapter to said probe during a brazing operation.