3966results about "Scanning probe microscopy" patented technology

An improved method of and apparatus for real-time continual nanometer scale position measurement by beam probing as by laser beams and the like, both fixed and oscillating or scanning, over an atomic and other undulating surface such as gratings or the like, relatively moving with respect to the probing beams; and providing, where desired, increased detection speeds, improved positioning sensing response, freedom from or relaxed requirements of strict control on probing oscillation amplitude, and multi-dimensional position measurement with focused beam probes and the like.

Nanostructured photonic materials, and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, biotech or other applications.

A method and apparatus for inspecting a photolithography mask for defects is provided. The inspection method comprises providing a defect area image to an image simulator wherein the defect area image is an image of a portion of a photolithography mask, and providing a set of lithography parameters as a second input to the image simulator. The defect area image may be provided by an inspection tool which scans the photolithography mask for defects using a high resolution microscope and captures images of areas of the mask around identified potential defects. The image simulator generates a first simulated image in response to the defect area image and the set of lithography parameters. The first simulated image is a simulation of an image which would be printed on a wafer if the wafer were to be exposed to an illumination source directed through the portion of the mask. The method may also include providing a second simulated image which is a simulation of the wafer print of the portion of the design mask which corresponds to the portion represented by the defect area image. The method also provides for the comparison of the first and second simulated images in order to determine the printability of any identified potential defects on the photolithography mask. A method of determining the process window effect of any identified potential defects is also provided for.

A method for slowing and controlling a beam of charged particles includes the steps of superimposing at least one magnetic field on a mass and passing the beam through the mass and at least one magnetic field such that the beam and the mass slows but does not stop the particles. An apparatus for slowing and controlling a beam of charged particles includes a bending magnetic field superimposed on a focusing magnetic field within a mass.

A method and a device for detecting an analyte, including a substrate having a chemically selective surface; and a fluidic system disposed on the substrate, the manifold having at least one fluid path in communication with at least a discrete region of the surface, wherein the one fluid path and the discrete region together define a contained sample region on the surface. The fluidic system has a removable portion, wherein the removal of the removable portion of the fluidic system renders the discrete region directly interrogatable by a surface-based analytical tool.

The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

A power supply for applying a voltage to a scanning electromagnet for deflecting a charged particle beam has a first power supply unit having no filter and a second power supply unit having a filter. When an irradiation position of the charged particle beam in an irradiation object is moved, the first power supply unit, namely a power supply unit having no filter, is used to apply the voltage to the scanning electromagnet, so that an exciting current flowing in the scanning electromagnet can be changed in a short time. Further, when the irradiation position of the charged particle beam is maintained, the second power supply is used to apply a voltage whose pulsating component was removed to the scanning electromagnet, so that the exciting current flowing in the scanning electromagnet can be controlled precisely. Consequently, the charged particle beam can be applied uniformly to the irradiation object and an irradiation time of the charged particle beam to the irradiation object can be curtailed.

A process for preparing a patterned layer of aligned carbon nanotubes on a substrate including: applying a pattern of polymeric material to the surface of a substrate capable of supporting nanotube growth using a soft-lithographic technique; subjecting said polymeric material to carbonization to form a patterned layer of carbonized polymer on the surface of the substrate; synthesising a layer of aligned carbon nanotubes on regions of said substrate to which carbonized polymer is not attached to provide a patterned layer of aligned carbon nanotubes on said substrate.

Al_xGa_yIn_zN, wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 μm² area. The Al_xGa_yIn_zN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality Al_xGa_yIn_zN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an Al_xGa_yIn_zN wafer.

Various probe systems and probes are provided. In one aspect, a probe is provided that includes a base and a first member coupled to the base. The first member has a first tip for probing a circuit device. A first actuator is coupled to the first member for moving the first member relative to the base. Electrical and/or topographical probing is possible.

The invention relates to an apparatus and a method for a scanning probe microscope, comprising a measuring assembly which includes a lateral shifting unit to displace a probe in a plane, a vertical shifting unit to displace the probe in a direction perpendicular to the plane, and a specimen support to receive a specimen. A condenser light path is formed through the measuring assembly so that the specimen support is located in the area of an end of the condenser light path.

A method of defect detection and repair of micro-electro-mechanical systems (MEMS) devices comprising the steps of (A) detecting at least one defect in the MEMS device, wherein each defect is an object that prevents the MEMS device from functioning substantially properly; (B) performing repair of each detected defect; (C) checking whether the MEMS device is functioning substantially properly after each detected defect is repaired; and (D) if the MEMS device is not functioning substantially properly after each detected defect is repaired, repeating steps (A-C).

This invention relates generally to a method for growing carbon fiber from single-wall carbon nanotube (SWNT) molecular arrays. In one embodiment, the present invention involves a macroscopic molecular array of at least about 106 tubular carbon molecules in generally parallel orientation and having substantially similar lengths in the range of from about 50 to about 500 nanometers. The hemispheric fullerene cap is removed from the upper ends of the tubular carbon molecules in the array. The upper ends of the tubular carbon molecules in the array are then contacted with a catalytic metal. A gaseous source of carbon is supplied to the end of the array while localized energy is applied to the end of the array in order to heat the end to a temperature in the range of about 500° C. to about 1300° C. The growing carbon fiber is continuously recovered.

A method for controlling a photolithography process includes providing a wafer having a first grating structure and a second grating structure overlying the first grating structure; illuminating at least a portion of the first and second grating structures with a light source; measuring light reflected from the illuminated portion of the first and second grating structures to generate a reflection profile; determining an overlay error between the first and second grating structures based on the reflection profile; and determining at least one parameter of an operating recipe for a photolithography stepper based on the determined overlay error. A processing line includes a photolithography stepper, a first metrology tool, and a controller. The photolithography stepper is adapted to process wafers in accordance with an operating recipe. The first metrology tool is adapted to receive a wafer having a first grating structure and a second grating structure overlying the first grating structure. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the first and second grating structures. The detector is adapted to measure light reflected from the illuminated portion of the first and second grating structures to generate a reflection profile. The data processing unit is adapted to determine an overlay error between the first and second grating structures based on the reflection profile. The controller is adapted to determine at least one parameter of the operating recipe of the photolithography stepper based on the determined overlay error.