430 results about "Charged particle beam" patented technology

The present disclosure relates to a system and a non-transitory computer-readable medium for estimating the height of foreign matter, etc. adhering to a sample. In order to achieve the abovementioned purpose, proposed is a system, etc. in which data acquired by a charged particle beam device or features extracted from the data are input to a learning model, which is provided with, in an intermediate layer thereof, a parameter learned using teacher data having data acquired by the charged particle beam device or features extracted from the data as inputs and having the heights or depths of the structures of samples or of foreign matter on the samples as outputs, and height or depth information is output.

Systems and methods taught herein utilize a single detector to provide both unidimensional data (e.g., for direct topographical imaging) and multidimensional data (e.g., for crystallographic data) for a sample that is interrogated with a charged particle beam. In some examples, unidimensional data can include signal intensity due to backscattered electrons received across the entire detector surface while multidimensional data can include signal intensity due to backscattered electrons as a function of pixel position. By obtaining unidimensional data and multidimensional data from a single detector, the unidimensional data and multidimensional data can be obtained at a same location, at a same time, or both at the same location and same time.

In one embodiment, a multiple charged-particle beam irradiation apparatus includes a correction map generation unit calculating, for each pixel, a beam modulation rate for the pixel and a beam modulation rate for at least one of pixels surrounding the pixel, based on an amount of displacement of a beam emitted toward the pixel and a position of a pattern placed within the pixel and generating a correction map in which modulation rates are defined, and an irradiation dose correction unit calculating, for each pixel, a corrected irradiation dose by adding a value obtained by multiplying the beam modulation rate for the pixel defined in the correction map by the beam irradiation dose for the pixel and a value obtained by multiplying the beam modulation rate for the at least one pixel by a beam irradiation dose for a pixel serving as an associated destination of the at least one pixel.

A system and method for increasing a gas flow across a substrate in a charged particle beam apparatus are disclosed. The apparatus may include a vacuum chamber comprising: a first gas inlet fluidly connected to a charged particle beam optical element array and configured to guide a first gas flow downstream toward a substrate within the charged particle beam optical element array at a first flow rate; and a second gas inlet configured to guide a second gas flow toward the substrate at a second flow rate. The first and second gas flows are merged to form a transverse gas flow across the top surface of the substrate, the transverse gas flow having a flow rate higher than either the first or second flow rate.

The invention provides a magnetic resonance guided charged particle beam radiotherapy device and an electromagnetic navigation parameter debugging method for target coordinates, and belongs to the technical field of radiotherapy devices. The system comprises a charged particle beam electromagnetic navigation device which comprises multiple stages of electromagnetic navigation coils, charged particle beams sequentially pass through the multiple stages of electromagnetic navigation coils, and parallel charged particle beams consistent with a magnetic resonance main magnetic field in direction are generated; the MR imaging device comprises an MR main magnetic field coil upper group and an MR main magnetic field coil lower group, and an imaging treatment area is formed between the MR main magnetic field coil upper group and the MR main magnetic field coil lower group. The electromagnetic navigation parameter debugging method comprises the steps of constructing a target cost function, optimizing electromagnetic navigation parameters based on an optimization algorithm without gradient information, and determining and outputting optimal navigation parameters. According to the invention, the charged particle beam parallel to the MR main magnetic field can be generated, the influence of Lorentz force on the charged particle beam is greatly reduced, the difficulty of positioning a tumor target region by the charged particle beam under the guidance of MR can be reduced, and the treatment accuracy is improved.

There is provide a circular accelerator and a particle beam therapy system that can improve the beam extraction efficiency. A circular accelerator that accelerates and extracts charged particle beams circulating in a magnetic field includes a first magnetic field region in which closed trajectories of the beams with different energies are eccentric and which has a magnetic field gradient decreasing in the magnetic field toward an outer peripheral side and a second magnetic field region having a magnetic field gradient increasing in the magnetic field toward the outer peripheral side. A border between the first magnetic field region and the second magnetic field region is located on a downstream side in a traveling direction of the beam with respect to a predetermined region in which an interval between the closed trajectories of the beams with the different energies is narrowest.

Samples and methods for determining beam spot size include scanning a pattern on a sample with a charged particle beam to generate an image. The pattern can include at least one sloped side edge and a top surface. The at least one sloped side edge can have a slope angle controlled during fabrication of the sample to be between about 40 to 80 degrees. The beam spot size can be determined based on an imaged profile of the at least one sloped side edge, the imaged profile being derived based on the image.

The invention discloses an electric field deflector, a preparation method thereof and an electric field deflection control system, relates to the field of semiconductors, and is used for realizing high-precision control of electron beams. The electric field deflector comprises a substrate, a dielectric layer arranged on one side of the substrate, a first signal interconnection lead connected with the ground electrode, a second signal interconnection lead connected with the signal electrode, a first deflection electrode and a second deflection electrode, wherein the first signal interconnection lead and the second signal interconnection lead are located in the dielectric layer and are connected with the ground electrode, and the first deflection electrode and the second deflection electrode are oppositely arranged. The first deflection electrode is electrically connected with the first signal interconnection lead, and the second deflection electrode is electrically connected with the second signal interconnection lead; the first shielding layer is connected with the first deflection electrode; the particle beam channel penetrates through the area between the first deflection electrode and the second deflection electrode, the part, located between the first signal interconnection lead and the second signal interconnection lead, of the dielectric layer, the first shielding layer and the substrate in the second direction; the second direction is vertical to the substrate; the electric field deflector is used for electric field deflection control of the charged particle beam.

Provided is a focused charged particle beam device including: a support portion that supports a processed substrate; and a focused energy beam columnar body that includes a differential exhaust device and is capable of relative movement in correspondence with an arbitrary region of a processed surface of the processed substrate, wherein the support portion supports only a peripheral portion of the processed substrate in a state in which the processed substrate is horizontally disposed, a positive pressure chamber is disposed below the processed substrate supported by the support portion, the positive pressure chamber applies positive pressure throughout the entirety of a processed region of the processed substrate, prevents deflection of the processed substrate due to gravity, includes a local negative pressure mechanism within the positive pressure chamber, the local negative pressure mechanism applies negative pressure while maintaining a state in which the local negative pressure mechanism does not contact a lower surface of the processed substrate, counteracts suction force of the differential exhaust device, maintains a state in which the local negative pressure mechanism opposes the differential exhaust device across the processed substrate, and is capable of relative movement with respect to the processed substrate in following the differential exhaust device.

To provide a technique of the above charged particle beam apparatus, a technique that can prevent the lowering of apparatus performance due to the influence of vibration and noise by an air blower (fan). The charged particle beam apparatus includes a body device that is provided in a body cover, a plurality of air blowers that are provided on the body cover, and a controller that controls the plurality of air blowers. The body device has a stage on which a sample is placed, and a microscope that images the sample. The controller obtains an image obtained by imaging the sample by the microscope, obtains vibration information from the image, compares the vibration information and a specification value, and on the basis of the result of the comparison, controls the numbers of rotations of the plurality of air blowers. The controller decreases the number of rotations of at least one first air blower among the plurality of air blowers, and increases the number of rotations of at least one different second air blower among the plurality of air blowers.

Provided are a vibration-suppressing mechanism that has excellent maintainability and can effectively control vibration of a column, and a charged particle beam device using the same. This charged particle beam device comprises: a sample chamber for accommodating a sample that will serve as an object to be observed therein; a column that is disposed on an upper portion of the sample chamber and irradiates and scans the sample with a charged particle beam generated by a charged particle source; and a vibration-suppressing mechanism that is removably provided to the column, said particle beam device being characterized in that the vibration-suppressing mechanism includes a stator affixed to the column, an annular mover that is supported so as to be movable in a direction orthogonal to the axial direction of the column, a plurality of actuators that cause the mover to vibrate in the direction orthogonal to the axial direction of the column, a plurality of vibration sensors affixed to the stator, and a controller that controls the actuators according to output signals from the vibration sensors.

In one embodiment, a multi charged particle beam writing method includes forming a multi charged particle beam with which a substrate serving as a writing target is irradiated, deflecting the multi charged particle beam to a position with a predetermined deflection offset added so that deflection voltages respectively applied to a plurality of electrodes of an electrostatic positioning deflector does not include a state where all the deflection voltages are zero, and irradiating the substrate with the multi charged particle beam. A positive common voltage is added to the deflection voltages which are applied to the respective electrodes of the electrostatic positioning deflector.

A method of updating images taken by charged-particle beam (CPB) tool of a feature of a wafer. The method includes generating a distortion map by a machine learning model trained on: a first CPB image of the feature, wherein the first image has a first resolution; a second CPB image of the feature, wherein the second image has a second resolution different from the first resolution and the second CPB image includes distortions; and a mask based on the first CPB image. The distortion map indicates how the second CPB image is distorted relative to the feature. A third image of the feature is generated by applying the distortion map to the second CPB image, wherein the third image has a third resolution higher than the first resolution and is used for performing metrology or defect detection.

Provided is a stage device comprising a stage, a Z-axis motor that magnetically floats the stage, and an X-axis motor that drives, in one axial direction within a plane, the stage floated by the Z-axis motor, wherein: the X-axis motor is provided with an X-axis coil, a pair of X-axis magnets that face each other and that sandwich the X-axis coil in the vertical direction without contacting the X-axis coil, and an X-axis yoke that holds the pair of X-axis magnets; the Z-axis motor is provided with a Z-axis coil, a Z-axis magnet, and a Z-axis yoke that holds the Z-axis magnet; and the Z-axis motor is disposed at a position that is below the X-axis motor such that the magnetic field which has leaked from the Z-axis motor is blocked by the X-axis yoke. Thus, it is possible to suppress magnetic field leakage and to perform high-speed positioning.

A method is provided that can correct the focal position even when the height position distribution has changed due to irreversible deformation of a sample caused by irradiation with a charged particle beam. [Configuration] A charged particle beam writing method according to one aspect of the present invention is characterized by comprising the steps of: determining a height change distribution, which defines the height change from the height position of the sample before irradiation caused by irreversible deformation of the sample at each position on the sample at the time of irradiating the sample with a charged particle beam, the sample being irreversibly deformed depending on the irradiation dose distribution of the charged particle beam; correcting the focal position of the charged particle beam when irradiating the sample with the charged particle beam based on the height change distribution; and writing a pattern on the sample with the charged particle beam having the corrected focal position.

Systems, components, methods, algorithms encoded in media, and techniques for localized hydrogen charging of a sample are described. A method of processing a workpiece in a focused ion beam system can include generating a plasma in an ion source gas comprising hydrogen. The method can include extracting a beam of hydrogen ions from the plasma. The method can include directing the beam toward a region of a workpiece, in accordance with a scan pattern. The method can include charging the region of the workpiece with hydrogen. In some embodiments, the method includes decomposing a hydrogen precursor using a charged particle beam, instead of directly irradiating the workpiece with a hydrogen focused ion beam.

The present invention provides an electronic component that increases the strength of the deflection field and reduces variations in the strength of the deflection field. [Solution] An electrode array unit comprising a substrate having multiple through holes for each of multiple charged particle beams to pass through, and multiple electrode pairs provided in each of the multiple through holes, wherein each of the multiple electrode pairs has a first electrode and a second electrode, and both the first electrode and the second electrode include an arc portion arranged to surround the center of the corresponding through hole, and the ends of the first electrode and the ends of the second electrode are arranged to face each other.

This invention proposes a hybrid magnet structure comprising two opposing diode magnet assemblies. Each diode magnet assembly includes a permanent magnet, two iron cores, and a movable magnetic field shunt element. This hybrid magnet structure can focus charged particle beams at different locations by applying an adjustable gradient magnetic field in the horizontal or vertical direction. This invention achieves the focusing of charged particle beams by allowing them to pass through the gradient magnetic field established between the two diode magnet assemblies. Furthermore, the magnitude of the gradient magnetic field can be changed by adjusting the gap between the movable magnetic field shunt element and the permanent magnet, thereby controlling the particle beam size along a certain axis for charged particle beams of different energies or masses.

The present disclosure relates to an inspection tool having a charged particle source to provide a charged particle beam, a sample holder to hold a sample, and a scanning system configured to scan the charged particle beam over an area of the sample in a scanning pattern. The scanning system may comprise a microwave or RF wave supporting structure to provide a first oscillating electromagnetic field to periodically deflect the charged particle beam in order to scan the charged particle beam over the area of the sample. The charged particle beam may be an electron beam, so that the inspection tool may be a scanning electron microscope. The scanning system may be configured to continuously scan the charged particle beam over the area of the sample.

A charged particle beam apparatus for irradiating or inspecting a sample is described. A charged particle beam apparatus includes a charged particle beam source for generating a primary charged particle beam and a multi-aperture lens plate having a plurality of apertures for forming four or more primary apertures. Two or more electrodes (e.g., each electrode having an opening) are provided with one opening for a primary charged particle beam or four or more primary sub-beams. The charged particle beam apparatus further comprises a collimator for deflecting a first primary beamlet, a second primary beamlet, a third primary beamlet, and a fourth primary beamlet of the four or more primary beamlets relative to each other. The charged particle beam apparatus further comprises an objective unit having three or more electrodes, each electrode having an opening for four or more primary beamlets. The charged particle beam apparatus further includes a platform for supporting the sample.

To solve a problem of a conventional technique.SOLUTION: In the present disclosure, systems, methods, algorithms, and non-transitory media storing computer readable instructions for reducing the Boersch effect using dispersion optics are described in various embodiments. The charged particle optical device may include a Wien filter arranged on the beam axis. The Wien filter can be configured to disperse the particles of the charged particle beam by energy in a dispersion plane. The dispersion plane may be parallel to the beam axis. The device includes an optical element disposed on the beam axis on the downstream side of the Wien filter. The optical element may be configured to focus the charged particle beam towards the beam axis. The device may also include a selector. The selector may be arranged on the beam axis at a position substantially coinciding with a third intersection plane downstream of the optical element.SELECTED DRAWING: Figure 1

A charged particle beam source, such as for use in an electron microscope, can include a mounting member defining a first opening at a free end of the mounting member and a bore extending from the first opening into the mounting member along a longitudinal axis of the mounting member. A second opening can be defined in a side wall of the mounting member and can extend between an outer surface of the mounting member and the bore, the second opening being spaced apart from the first opening along the longitudinal axis of the mounting member. An emitter member can be received in the bore and aligned along the longitudinal axis of the mounting member. A fixative material can be received in the bore and in the second opening to retain the emitter member in the bore.

For irradiating a target with a charged-particle beam, a plurality of stripes are written using the beam at respective stripe locations (y0-y15). In order to reduce charging effects during irradiation, the time sequence of the stripes, expressed as a function y(k) of a time index k, is different from a direct linear order. Based on a pre-determined integer number w (“stripe wing number”) which is not larger than the number of stripes divided by at least 4, the time sequence for writing the stripe of location y(k) at time index k is rearranged so as to comply with the condition that the stripe at a location y(k) is at most w stripe locations before the stripe location yk and at most w stripe locations behind the stripe location yk, and / or between each pair of spatially directly neighboring stripes, at most 2w different stripes are written.

A particle beam irradiation system includes a first building, a second building different from the first building, an accelerator installed in the first building configured to accelerate a charged particle beam, a beam transport line configured to transport the charged particle beam accelerated by the accelerator, and an irradiation device installed in the second building configured to irradiate an irradiation target with the charged particle beam transported by the beam transport line.

To align two-stage aperture holes with high precision.SOLUTION: A beam detector includes a first aperture substrate formed with a first passage hole smaller than the inter-beam pitch of the multi-charged particle beam, a second aperture substrate formed with a second passage hole through which one detection target beam that has passed through the first passage hole can pass, and a sensor that detects a beam current of the detection target beam that has passed through the second passage hole. The second aperture substrate includes a conductive material, and a plurality of third passage holes through which light can pass are formed around the second passage hole.SELECTED DRAWING: Figure 1

A charged particle beam apparatus that forms a probe with a charged particle beam and scans a specimen with the probe to acquire a scanning image. The charged particle beam apparatus includes an optical system for scanning the specimen with the probe; a detector that detects a signal generated from the specimen through the scanning of the specimen with the probe; and a control unit that controls the optical system. The control unit performs correction processing of acquiring a reference image obtained by the scanning of the specimen with the probe, comparing the reference image to a criterion image to determine a drift amount, and correcting a displacement of an irradiation position with the probe on the specimen based on the drift amount; and processing of setting a frequency with which the correction processing is to be performed based on the drift amount.

A target substrate loading device arranges and holds a plurality of target substrates for loading into a target device along the thickness direction, and automatically delivers the target substrates to the target device, which holds the target substrates so that they are irradiated by a charged particle beam from a particle accelerator.

The present embodiment provides a multi-charged particle beam drawing apparatus that suppresses a beam position shift on a sample surface. The charged particle beam drawing apparatus of the present embodiment is a multi-charged particle beam drawing apparatus including: a blanking aperture array substrate provided with a plurality of blankers that perform blanking deflection of a plurality of charged particle beams that constitute a plurality of beams; and a first shielding member disposed on a downstream side of the blanking aperture array substrate in a traveling direction of the plurality of beams, having a cylindrical portion through which the plurality of beams pass inside, and being composed of a high magnetic permeability material.

To correct a beam irradiation position with high accuracy and prevent deterioration of writing accuracy.SOLUTION: A charged particle beam writing method of deflecting a charged particle beam with a deflector and irradiating a substrate with the charged particle beam to draw a pattern includes calculating a charge amount distribution on the basis of the charge amount in a beam irradiation region on the substrate immediately after the charged particle beam is irradiated and a charge diffusion coefficient in the substrate, calculating a positional deviation amount distribution of the charged particle beam on the substrate on the basis of the charge distribution, and correcting the irradiation position of the charged particle beam on the basis of the positional deviation amount distribution.SELECTED DRAWING: Figure 1

The present invention appropriately selects an adjustment to be executed, and executes the adjustment at an appropriate timing.　Provided is a charged particle beam device that generates an observation image of a sample by irradiating the sample with a charged particle beam, in which a control unit: executes a program to execute processing with respect to the sample (S601); selects an adjustment recipe to be executed from among a plurality of adjustment recipes on the basis of an adjustment history of the charged particle beam device or an observation image (S604); determines a timing for performing adjustment during execution of the program, on the basis of a status of the charged particle beam device and a program execution state (S605 to S607); and executes the selected adjustment recipe (S608).