101 results about "Particle source" patented technology

Quantum Phased Array(s) of emitters and receivers that generate, modulate, emit, receive, and detect any quantum field. Quantum phased arrays include particle source(s) sourcing any quantum field, transmit modulator element(s) modulating any quantum observable and the associated quantum field, emitting elements radiating one or more quantum fields spatiotemporally, a propagation medium with one or more modulator elements for complete control of the quantum field, receiver(s) receiving one or more quantum fields, receive modulator element(s) modulating any quantum observable and the associated quantum field, detector(s) resolving one or more received quantum fields. Quantum metrology, communication and computing systems including quantum phased arrays are detailed for leveraging quantum field engineering functionality (complete control of one or more wavefunctions of one or more particles in any one or more orthonormal bases) of quantum phased arrays for quantum metrology, communication and computing applications.

The embodiment of the invention provides a particle source assembly and particle beam equipment, relates to the technical field of charged particle beam processing and detection equipment, and is used for improving the degree of freedom of beam state adjustment of charged particle beams. The particle source assembly comprises a particle source, an adjustable diaphragm and a collimating lens device which are arranged along a first direction. Wherein the particle source is used for generating a charged particle beam which is emitted towards the adjustable diaphragm along a first direction; the adjustable diaphragm is positioned in a transmission path of the charged particle beam, and the size of a diaphragm hole is adjustable, so that the beam size of the charged particle beam is adjusted; the collimating lens device is used for collimating the charged particle beam emitted from the adjustable diaphragm, and the position of the collimating main plane in the first direction is adjustable. The particle source assembly can be applied to particle beam equipment.

A multi-beam particle microscope with a rapidly replaceable particle source is disclosed. To this end, the multi-beam particle microscope comprises specific dual-sealing and column separation modules. By means of the dual-seal and column separation module, a replacement module with a particle source can be replaced more quickly, and potentially sensitive component parts of a particle optical assembly of the multi-beam particle microscope can be protected from contamination.

A multi-beam particle microscope having a quickly replaceable particle source, the microscope comprising a double seal-off and column separation module. Using the double seal-off and column separation module, a replacement module with a particle source can be replaced relatively quickly. Potentially sensitive constituent parts of the particle optics of the multi-beam particle microscope can be protected from contamination.

Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a charged-particle source configured to generate primary charged particles, the primary charged particles forming a primary charged-particle beam along a primary optical axis, and a charged-particle detector comprising a plurality of con-centric segments of a charged-particle sensitive material configured to detect charged particles emitting from a sample after interaction of the primary charged-particle beam with the sample, wherein each segment of the plurality of concentric segments is configured to collect the emitted charged particles having a range of energy levels and a dominant energy level.

This invention relates to the field of neutron source technology, and particularly to a controllable isotope neutron source device based on ion migration and a method for generating neutrons. The device includes a casing, inside which are a target material module, a target ion migration system, a safety module, and an alpha particle source term. The target material module provides target nuclide ions. The alpha particle source term includes alpha radioactive nuclide material and target nuclide intercalation material. The safety module is composed of target nuclide intercalation material. The target ion migration system is connected to an external control field. Target nuclide ions migrate through the target ion migration system within the safety module and the alpha particle source term. This invention enables active controllability of the isotope neutron source, significantly improving safety. By ensuring sufficient contact between alpha particles and target nuclides to form a molecular intercalation structure, the (α,n) reaction efficiency is greatly improved. Furthermore, this neutron source can be used in combination with multiple modules according to application requirements, effectively increasing the neutron output flux.

The invention relates to a particle source model training method and a dose distribution determining method of a radiotherapy system, and the method comprises the steps: obtaining an off-axis ratio calculation curve corresponding to a particle source based on input energy and a preset source model; acquiring an off-axis ratio measurement curve and an output factor measurement value of the radiotherapy system under the action of input energy; based on the difference between the off-axis ratio calculation curve in the radiation field and the off-axis ratio measurement curve in the radiation field, adjusting model parameters used for determining probability densities at different off-axis positions in a preset source model until the difference is in a preset error range; determining a correction factor of the output factor based on the output factor measurement value and the adjusted preset source model; and correcting the adjusted preset source model based on the correction factor to obtain a particle source model.

The application discloses a method and device for identifying the source of atmospheric single particles based on topography, particle size and composition, and the method comprises the following steps: acquiring the image, composition data and particle size parameters of single particles by analyzing the sample of a set pollution source through a computer-controlled scanning electron microscope, constructing a single particle data set, and randomly dividing the single particle data set into a first data set and a second data set; constructing a source analysis model according to a residual network model and an extreme gradient boosting model; training the source analysis model through the first data set and the second data set; and obtaining the probability value of a target single particle belonging to the set pollution source through the trained source analysis model, and determining the source of the target single particle. The application can fully excavate the topography, particle size and composition characteristics of particulate matters, identify the source of the particulate matters, and be helpful to further study the physical and chemical properties of atmospheric particulate matters and the source analysis of the atmospheric particulate matters.

The invention provides a cyclotron electrostatic deflection plate beam loss heat source reconstruction method, and relates to the technical field of particle accelerator thermal analysis and multi-physics field coupling calculation, and the method comprises the steps: 1, configuring beam dynamics simulation parameters, multi-particle tracking is carried out under a three-dimensional field graph containing a central area electromagnetic field, a harmonic coil magnetic field and an electrostatic deflection electric field, and a particle loss list is generated; step 2, transferring the particle loss list into a beam source file of a Monte Carlo radiation transport program, configuring Monte Carlo parameters including a deflection plate material, a boundary, a particle type and an energy spectrum, executing particle transport simulation, and obtaining a three-dimensional energy deposition matrix on an electrostatic deflection plate element; according to the method, high-resolution heat source reconstruction is realized, the peak temperature rise calculation error of the deflection plate can be reduced, a temperature field solving result can be fed back to optimize the particle source, and a reliable basis is provided for thermal structure design and cooling optimization of the electrostatic deflection plate.

An etch pattern generation system (1) and method comprising-an incident particle beam (21) having a most probable wavelength (lambda) from a particle source (2); and-a reticle (4) comprising through-holes (3) arranged in the incident particle beam (21). The etch pattern generation system (1) generates a single nano feature size pattern (51), and wherein the through-holes (3) are arranged aperiodically in the reticle. A computer-implemented method for generating a model of an etch reticle (4) is also disclosed.

The low-energy PVD coating device comprises a sputtering cathode, the sputtering cathode is loaded with a target material, the target material and a substrate are oppositely arranged, and the target material generates film material particles under the action of an electric field of the sputtering cathode; the energy adjusting plate is positioned between the substrate and the sputtering cathode and is provided with a via hole; the collision particle pipeline is connected with the collision particle source, the collision particle source is internally provided with preset inert gas, a gas outlet end opening of the collision particle pipeline is formed in the energy adjusting plate, and the conveyed inert gas moves towards the target material; the kinetic energy of the inert gas is smaller than that of the film material particles. As the inert gas has a relatively fixed flowing direction and is opposite to the incident direction of the film material particles, the energy of the film material particles is reduced from a high-energy state to a state close to the energy state of the just emitted gas particles through energy exchange of elastic collision, so that the film material particles with very low energy are obtained, and stable low-energy deposition coating is realized.

The application discloses a single-particle source intelligent analysis method and device based on scanning electron microscope energy spectrum analysis, and relates to the field of environmental protection. The method is characterized in that: a computer-controlled scanning electron microscope is applied to analyze collected samples of a set pollution source, to obtain images, element data and particle size parameters of single particles in the pollution source samples, and to construct a single-particle data set of the pollution source; a residual network model is used to mine the morphological features of the single-particle images, to obtain a preliminary probability value of the single particle belonging to the set pollution source; the preliminary probability value of the single particle is combined with the particle size parameters and the element data of the single particle, and is input into an extreme gradient boosting model, to obtain a probability value of the single particle belonging to the set pollution source; the probability value of the single particle is weighted according to the mass or quantity of the single particle, and is subjected to source-class summation calculation processing, to obtain the mass or quantity contribution / occupancy ratio of atmospheric particulate matters emitted by the set pollution source. The application can fully mine the morphological, particle size and component features of the particulate matters, identify the sources of the particulate matters, and quantitatively determine the contributions of different pollution sources.

The invention relates to a high-current pulse proton accelerator beam synchronous control system and method, belongs to the technical field of particle accelerator control, and solves the problem of high operation risk of a high-current pulse proton accelerator in the prior art. The beam synchronous control system comprises a beam control system, a particle source acceleration power supply system, a particle source extraction power supply system and each high-frequency acceleration cavity system; the beam control system determines a beam mode and a beam pulse width according to a received user beam output instruction, and synchronously sends a boost event code to the particle source acceleration power supply system and a turn-off event code to the particle source extraction power supply system; the particle source acceleration power supply system, the particle source extraction power supply system and each high-frequency acceleration cavity system respectively trigger hard interruption after receiving corresponding event codes, and execute corresponding events in the hard interruption to realize synchronization of beam current and high-frequency feedforward. And the operation risk is reduced.

The device for implanting particles into a substrate (12) comprises a particle source (2) and a particle accelerator (4) for generating an ion beam (10) comprising positively charged ions. The device further comprises a substrate holder (30) and an energy filter (20) which is arranged between the particle accelerator (4) and the substrate holder (30). The energy filter (20) is a microstructured film having a predetermined structural profile and is used to set the dopant depth profile and / or defect depth profile generated by the implantation process in the substrate (12). The device further comprises a passive braking element (22) for the ion beam (10), which is arranged between the particle accelerator (4) and the substrate holder (30) and is spaced apart from the energy filter (20).

A method for inspecting a specimen with four or more primary beamlets is described. The method includes generating a primary charged particle beam with a charged particle source and generating the four or more primary beamlets with a multi-aperture lens plate and two or more electrodes. A first, second, third, and fourth primary beamlet of the four or more primary beamlets are deflected with respect to each other with a collimator. An alignment system is controlled upstream of the collimator to minimize a measured current or maximize a signal from signal beamlets. The four or more primary beamlets are scanned over a surface of the specimen with a scanning deflector assembly. The four or more primary beamlets are focused on the specimen with an objective lens unit to generate four or more signal beamlets. The four or more signal beamlets are guided on detection surfaces.

A charged particle beam device is provided with: a charged particle gun (100) provided with a charged particle source (101); and a charged particle optical system that focuses a charged particle beam (110) from the charged particle gun (100) on a sample, the charged particle gun (100) being provided with a first electrode (102) positioned below the charged particle source (101) and an acceleration electrode (104) positioned below the first electrode (102), and an equipotential space being formed between the first electrode (102) and the acceleration electrode (104). The charged particle optical system is provided with a magnetic field lens (105) having an equipotential space that includes an optical axis and is equipotential with the potential of the first electrode (102) in the traveling direction of charged particles from the charged particle source (101), or has a fixed potential difference with respect to the potential of the first electrode (102), and the magnetic field lens (105) is disposed such that the main surface thereof crosses the equipotential space.

A charged particle wire device is characterized by comprising: a charged particle source (202) consisting of a single crystal needle (204), a filament (205) connected to the single crystal needle, and an insulator (207) for holding the filament; a plurality of non-evaporating getter materials (201); an extraction electrode (203); and a housing (209) arranged around the axis of the electron wire emitted from the charged particle source; wherein a heater (212) for heating the plurality of non-evaporating getter materials is disposed at the extraction electrode, the plurality of non-evaporating getter materials are arranged side by side in the housing, the housing is connected to the extraction electrode, and an elastic member (250) is disposed between the non-evaporating getter materials and the housing, the elastic member (250) being configured to push the non-evaporating getter materials. This charged particle beam device comprises: a charged particle source 202 composed of a single crystal needle 204, a filament 205 connected to the single crystal needle, and an insulator 207 that holds the filament; a plurality of non-evaporation getter materials 201; a lead-out electrode 203; and a housing 209 disposed so as to surround the axis of an electron beam emitted by the charged particle source, the charged particle beam device being characterized in that a heater 212 for heating the plurality of non-evaporation getter materials is disposed in the lead-out electrode, the plurality of non-evaporation getter materials in the housing are disposed side by side, the housing is connected to the lead-out electrode, and elastic members 250 configured to press the non-evaporation getter materials are disposed between the non-evaporation getter materials and the housing.

A charged particle beam system includes a chamber; a charged particle source unit that has a charged particle source; a supporting member that is provided on a side wall of the chamber and detachably supports the charged particle source unit inside the chamber; and a chamber door that is provided on the side wall of the chamber for access to an interior of the chamber.

A charged particle beam system includes: a chamber (202); a charged particle source unit that has a charged particle source (210); a supporting member (700) that is provided on a side wall of the chamber and detachably supports the charged particle source unit inside the chamber; and a chamber door (204) that is provided on the side wall of the chamber for access to an interior of the chamber.

The application discloses a kind of solar flare X-ray full-link simulation method and system based on Geant4, belong to space satellite detection and numerical simulation technical field.The method includes: build high-performance hybrid parallel computing platform based on Geant4;Based on the platform, construct layered magnetized solar atmosphere model, configure physical process list and generate high-energy electron particle source;Through light tracing algorithm and self-defined step action module, the transmission, scattering and polarization evolution of X-ray in layered magnetized solar atmosphere are tracked and simulated;Through pixelated imaging and data output module, photon information is mapped to multiple virtual detector imaging planes, and X-ray imaging, energy spectrum and polarization degree data of different observation angles are output.The application solves the problems of existing model and multi-satellite stereoscopic observation data mismatch, Compton scattering details missing, polarization information deficiency and low computing efficiency, and provides an effective tool for analysis and simulation of multi-satellite joint observation data.

The invention discloses a SiPM and CLYC combined detector performance optimization simulation method based on Geant4 and TCAD software. The method comprises the following steps: 1, constructing a numerical simulation model of a SiPM and CLYC combined detector in Geant4 software, simulating a change relation curve of luminous intensity of CLYC scintillators with different shapes along with scintillation photon wavelengths, and determining the optimal shape and the optimal size of the CLYC scintillators; 2, on the basis of the optimal shape and the optimal size of the CLYC scintillator, Geant4 software is used for simulating the change relation of the detector efficiency along with the thickness of the polyethylene moderator, and the optimal polyethylene thickness is obtained; and 3, constructing a numerical simulation model of the SiPM device by utilizing TCAD software, and simulating a time-varying curve of current generated by photons generated by excitation of neutrons and a gamma particle source in the SiPM device. According to the method, the detector structure is optimized, and a basis is provided for subsequent electronic design of the detector.

The application relates to the technical field of particle deposition and semiconductor radiation resistance analysis, and discloses an alpha particle energy deposition calculation method based on a Monte Carlo particle transport simulation tool, which sequentially comprises material and particle source setting, use of an energy deposition scorer, statistics of single particle events, calculation of a soft error rate, and output and data analysis. By using the application, the need for field experiments is greatly reduced, and the time and cost required by experiments are saved. Moreover, by using a simulation method, a designer can more efficiently calculate the energy deposition of alpha particles in a semiconductor device and obtain the soft error rate of the alpha particles, and can perform radiation resistance reinforcement design of the semiconductor device according to the data, so that the radiation resistance performance and reliability of the device are improved.

A charged particle beam device includes: a stage 124 on which a sample 108 is to be placed; a charged particle optical system including a charged particle source 113 and an objective lens 121 that focuses a charged particle beam from the charged particle source onto the sample; and a detector 123 disposed between the objective lens and the stage and configured to detect electrons 109 emitted by an interaction between the charged particle beam and the sample. The stage, the charged particle optical system, and the detector are housed in a vacuum housing 112, and the detector includes a scintillator 107, a solid-state photomultiplier tube 104, and a light guide 106 provided between the scintillator and the solid-state photomultiplier tube, and an area of a light receiving surface of the scintillator is larger than an area of a light receiving surface of the solid-state photomultiplier tube.

Though high-brightness charged particle sources have high brightness, the angular current density thereof is low, and when a large current is acquired, aberration in the electron lens system increases and spatial resolution deteriorates.　The present invention narrows the emission angle of the charged particle beam and adjusts the angular current density by treating a composite extraction electrode composed of two electrodes as one electrode disposed directly below an emitter, and forming a convex potential distribution on the emitter side and a concave potential distribution at the emitter tip using the voltage combination applied to the two electrodes. Since the lens effect from the composite extraction electrode acts directly below the emitter tip, aberration is extremely small and there is no deterioration of the spatial resolution even when a large current is acquired.

The invention relates to a clamping assembly, a wafer machining method and metal process equipment. The clamping assembly comprises an upper clamp, the upper clamp comprises an upper clamp top and a clamping ring extending downwards from the bottom of the upper clamp top, and the cross section area of the bottom of the clamping ring is smaller than the cross section area of the connecting position of the top of the clamping ring and the top of the upper clamp; wherein the clamping ring is in contact with the upper surface, exposed out of the edge of the substrate, of the wafer so as to clamp the wafer, and the clamping assembly is not in contact with a polycrystalline silicon layer of the wafer when clamping the wafer. According to the clamping assembly, the contact area between the clamping assembly and the upper surface of the wafer can be reduced, so that particle sources generated by friction between the clamping assembly and the wafer are reduced, meanwhile, due to the fact that the clamping ring makes direct contact with the compact substrate, compared with clamping of a polycrystalline silicon layer, the generated particle sources can be further reduced, and the production efficiency is improved. Therefore, in-film particle defects in the metal film layer are reduced, and the yield of the semiconductor device is improved.

A charged particle beam device for observing a sample by periodically irradiating the sample with a pulsed charged particle beam includes a control device configured to control irradiation using the pulsed charged particle beam and detection of a signal of an emitted electron based on an observation condition. The control device calculates an irradiation period, a scanning speed, and a pulse width of the pulsed charged particle beam and a detection timing of the signal of the emitted electron based on a current of the charged particle beam emitted from the particle source and an electrostatic capacity and an electrical resistance of the sample, and sets the observation condition including the current of the charged particle beam, the irradiation period, the scanning speed, and the pulse width of the pulsed charged particle beam, and the detection timing of the signal of the emitted electron.

The invention discloses a neutron generator and a neutron treatment system.The neutron generator comprises at least one particle source and a target system, the particle source is used for generating particle beams, and the particle beams can act on the target system and generate neutrons; the target system can be driven by a driving mechanism to rotate, a heat dissipation mechanism is arranged in the target system, and the heat dissipation mechanism can achieve internal circulation heat dissipation through rotation of the target system. According to the invention, the technical problems that the intensity of the output neutron beam current is synchronously weakened if equal-proportion reduction is carried out according to the structure of the current neutron generator in an application scene requiring a small neutron treatment system, and the treatment time is prolonged or partial clinical treatment requirements are difficult to meet during neutron treatment can be solved; compared with an existing neutron generator for neutron therapy, the neutron generator can maintain and even improve the intensity of neutron beams while achieving miniaturization of a neutron therapy system.

This invention provides a method for calculating the PKA energy spectrum based on multi-particle source simulation, belonging to the field of satellite space environment analysis technology. The method includes: S1, constructing a semiconductor detector model based on the Monte Carlo method; S2, setting particle sources, which include multiple forms, at least one of which includes two or more types of high-energy particles; S3, performing a real space environment simulation based on the silicon wafer thickness of the semiconductor detector model, calculating the change trend of the primary collision atom energy spectrum caused by irradiation from different forms of particle sources under the same incident structure and the same model. This invention, by using multiple forms of particle sources and comparing the PKA energy spectrum change trends under different particle sources, selects a particle source that better matches the device's mission environment, thus better simulating the influence of comprehensive space radiation environment factors and improving the representativeness of the simulation results for the comprehensive space radiation environment effects.

Apparatuses, methods, and systems for ultra-fast beam current adjustment for a charged-particle inspection system include an charged-particle source configured to emit charged particles for scanning a sample; and an emission booster configured to configured to irradiate electromagnetic radiation onto the charged-particle source for boosting charged-particle emission in a first cycle of a scanning operation of the charged-particle inspection system, and to stop irradiating the electromagnetic radiation in a second cycle of the scanning operation.

The invention discloses a method and system for optimizing two-dimensional argon plasma uniformity by introducing a high-energy particle source, and the method comprises the steps: S1, filling a plasma reaction chamber with background gas, and simulating the distribution of neutral particles; s2, initializing the speed and the position of charged particles in the gas in the chamber, enabling the charged particles to be uniformly distributed in the chamber, and determining the intensity, the time sequence, the incident direction and the incident position of high-energy particles emitted by an external particle source; s3, calculation of charged particle density, potential and electric field; s4, calculating the force acting on the charged particles; s5, moving the charged particles; s6, checking and executing collision; and S7, repeating the steps S3 to S6, adjusting the high-energy particle injection time sequence until a steady state is reached, and obtaining the data distribution of the charged particles. Through controllable interaction between an external particle source and plasma or background gas, seed electrons-ions are actively generated in a specific space area or energy distribution is changed, and inherent space non-uniformity of the plasma is compensated.