80 results about "Particle radiation" patented technology

The invention provides a muon detector for measuring soil moisture, and belongs to the technical field of testing by utilizing wave or particle radiation. The muon detector comprises a tubular scintillator which is used for detecting muons in cosmic rays and emitting scintillation light, and at least two outer optical fibers which are equal in screw pitch and used for collecting and transmitting the scintillation light are spirally wound on the periphery of the tubular scintillator. At least two inner optical fibers which are equal in screw pitch and used for collecting and transmitting scintillation light are spirally arranged on the inner circumference of the tubular scintillator, and the rotation direction of each inner optical fiber is opposite to that of each outer optical fiber, so that the tubular scintillator is divided into a plurality of latticed detection units in the internal and external directions. Compared with the prior art, the latticed detection unit is smaller, the existing scintillation light signal can only be acquired by the outer optical fiber, the scintillation light signal can also be acquired by the inner optical fiber, the optical fiber closer to the optical fiber can be acquired by the optical fiber, and the inner optical fiber and the outer optical fiber form an acquisition network, so that the detection precision is higher.

Systems and methods for guiding radiation therapy including providing particle radiation to a region of interest of a subject and receiving volumetric ionizing radiation acoustic imaging (iRAI) data and ultrasound imaging data from the region of in response the particle radiation. Further, from the iRAI data and the ultrasound imaging, a position of the particle radiation in the region of interest is determined, that position being a treatment position of the particle radiation. Further, the systems and methods determine one or more parameters of the particle radiation for adjusting in response to the determination of the position.

The invention provides an SRAM (Static Random Access Memory) storage unit anti-single particle radiation reinforcement method and system, and relates to the technical field of microelectronics and circuit structure design, a redundant node coupled with a main storage node of an SRAM storage unit is constructed, and the redundant node is used for redundant storage of the logic state of the main storage node; the polarity of a main storage node is reinforced by configuring the main storage node into a circuit structure fully surrounded by a single-type transistor; wherein the redundant node and the main storage node after polarity reinforcement are integrated into a reinforced SRAM (Static Random Access Memory) storage unit. According to the method, circuit-level fusion and collaborative design are carried out on redundancy reinforcement and polarity reinforcement, so that the single event upset resistance of the SRAM unit is improved, and an efficient and enforceable reinforcement design method is provided.

A radiation device comprises at least a vacuum chamber (1), an electromagnetic accelerator (8) for generating a primary energy beam of ions inside the vacuum chamber (1), and a layer of material (S) carried by a support (4) rotating in the vacuum chamber (1) to generate a flow of particles when a series of nuclear fusion reactions are triggered on the material (S) thanks to the energy of said beam, and wherein the support (4) is hollow and sealed defining a rotating three-dimensional surface that surrounds a containment volume for a cooling liquid in heat exchange with the layer of material (S), such rotating three-dimensional surface defining a heat exchange surface wetted by the liquid, and wherein a level of the free surface of the liquid on the heat exchange surface moves upwards in use due to the action of the centrifugal acceleration generated by the rotation of the support (4).

A kind of anti-radiation reinforced SiC super-junction JFET structure and preparation method, from bottom to top are in order: drain metallization layer, N+ substrate layer, N buffer layer, P column region, N column region, P-base region, current expansion region, N+ source region, P+ gate region, isolation dielectric layer, gate metallization layer, source metallization layer.P column region and N column region are arranged alternately on the upper surface of N buffer layer, P column region is symmetrically arranged, and N column region is arranged between two P column regions.P column region and P-base region form a P-type doped region as a whole, and are connected with source metallization layer.Electrically conductive channel structure is formed between P+ gate region and P-base region, and the opening and closing of channel are realized by controlling the voltage on P+ gate region.The application effectively solves the problem of electric field concentration caused by high-energy charged particle bombardment in the device, reduces local high temperature, and greatly improves the anti-single-particle radiation capability of SiC JFET.

The present invention provides: a scintillator which is reduced in the intensity of the afterglow, while having increased luminous intensity; and a charged particle radiation apparatus. A scintillator according to the present invention is characterized in that: a base material, a buffer layer, a light emitting part and a first conductive layer are sequentially stacked in this order; the light emitting part contains one or more elements that are selected from the group consisting of Ga, Zn, In, Al, Cd, Mg, Ca and Sr; and a second conductive layer is provided between the base material and the light emitting part.

The invention relates to a gas supply device, a particle radiation apparatus, a method for operating a gas supply device, a method for operating a particle radiation apparatus, and a computer program product, the gas supply device having a first precursor reservoir for receiving a first precursor, a second precursor reservoir for receiving a second precursor, and a supply unit for supplying the first precursor in gaseous state and / or the second precursor in gaseous state onto a surface of an object. A first guiding device is arranged between the first precursor reservoir and the supply unit. A second guiding device is arranged between the second precursor reservoir and the supply unit. A first valve is arranged between the first guiding device and the supply unit. A second valve is arranged between the second guiding device and the supply unit. A control valve for supplying the first precursor in gaseous state and / or the second precursor in gaseous state is connected to the first valve, the second valve and the supply unit.

This invention provides a proton imaging method and imaging device, applicable to the fields of proton imaging technology and signal processing technology, particularly in the field of particle radiation imaging technology. The method includes: determining a virtual source position based on an initial two-dimensional dose distribution of a proton beam acquired without an imaging object; obtaining multiple sub-beam propagation paths from the virtual source position to the multiple predetermined sub-beam center positions based on the virtual source position and multiple predetermined sub-beam center positions on a predetermined plane; obtaining sub-beam data pairs corresponding to the sub-beam propagation paths and the two-dimensional dose distribution based on the two-dimensional dose distribution and the lateral distribution components determined along the sub-beam propagation paths; obtaining multiple water equivalent path lengths corresponding to at least one projection angle through an iterative algorithm based on the multiple sub-beam data pairs corresponding to at least one projection angle; and performing image reconstruction based on the multiple water equivalent path lengths corresponding to at least one projection angle to obtain a target image of the imaging object.

The present invention discloses a field plate terminal structure with single particle radiation reinforcement and a preparation method thereof, belonging to the field of microelectronics technology. The structure includes a substrate, an epitaxial layer, a device main junction region and a carrier lifetime control region, a field oxide layer, an anode, a field plate, which is arranged on the field oxide layer, and a cathode, wherein the anode is in contact with the field plate; the carrier lifetime control region is located in the region of the field plate corresponding to the epitaxial layer. The present invention reduces the number of hole carriers moving to the edge of the main junction by introducing a carrier lifetime control layer (i.e., the carrier lifetime control region) on the upper surface layer of the semiconductor material in the terminal region, thereby alleviating the current density and heat accumulation at the edge of the main junction and improving the SEB resistance of the field plate terminal structure.

The invention relates to a powder delivery system for delivering a raw material powder to a device for producing a three-dimensional workpiece by irradiating a layer of the raw material powder by means of electromagnetic radiation or particle radiation. The powder delivery system comprises: a conveyor line designed to convey a flow of gas at least along a section and a flow of powder driven by the flow of gas at least along the section; and a conveying device designed to convey the gas flow through the conveying line. The powder delivery system further includes a first tank connected to the conveyor line for supplying the powder for the additive manufacturing process to the device; and at least one overflow vessel connected to the conveyor line for receiving excess powder accumulated during the additive manufacturing process. The powder conveying system further comprises a buffer container connected to the conveying line and used for supplying the powder to be screened to the screening equipment; and the screening equipment is used for screening the powder to be screened and distributing the screened powder. The powder delivery system includes an interface for an external tank connected to the conveyor line for introducing fresh or impure powder into the powder delivery system. The powder delivery system further comprises a controller for controlling the powder delivery system such that the system performs at least one of the following delivery processes: a. Delivering the screened powder into the first tank; b. Conveying the powder from the at least one overflow container into a buffer container; and c. Conveying the powder from the outer tank into the buffer container.

The invention relates to a scanner system (10) for use in an apparatus (100) for producing a three-dimensional workpiece by applying electromagnetic radiation or particle radiation to a layer of a raw material powder, the scanner system (10) comprising a pivotable scanner mirror (12) having a first surface (14) configured to be impinged by an irradiation beam (116) emitted by a radiation source (114). Furthermore, the scanner system (10) includes a scanner mirror cooling device (22) having a first coolant supply device (26) configured to direct a first coolant flow (28) over the first surface (14) of the scanner mirror (12), and / or directing a first coolant flow onto a first surface of the scanner mirror.

The invention relates to a method for the surface treatment of a substrate (B), in particular as a preparation step for a method for connecting the substrate to a further substrate, comprising:-providing a substrate (B) having a bonding surface provided for connection,-treating (100) the substrate (B) at least in partial regions of the bonding surface in order to form an amorphous layer (C) having a first thickness (D1), wherein primary particle radiation is preferably used for forming the amorphous layer (C), and-reducing (200) the layer thickness of the amorphous layer (C), preferably to a second thickness (D2).

The embodiment of the utility model discloses a power supply circuit and a satellite power supply system, a control module is arranged to control one power supply module to work according to a detection voltage detected by a voltage detection module, that is, the power supply module of the power supply circuit works in a cold backup mode, and only one power supply module works at the same time. The power supply module which does not work is not affected by space particle radiation, so that even if one power supply module is damaged due to the space particle radiation influence, other power supply modules can continuously supply power to the load, and the power supply reliability of the power supply circuit is improved. The isolation module is connected between the output end of the power supply module and the load, the isolation module can isolate mutual influence between different power supply modules, and the power supply reliability of the power supply circuit is further improved. Moreover, the power supply circuit is simple in structure and easy for engineering realization, and has a wide application prospect in the field of microsatellites.

The invention relates to an acoustic radiation detector (4) for high-energy radiation, comprising a solid absorption layer (12) and a detector assembly (13) which is acoustically coupled to the absorption layer (12), wherein - the absorption layer (12) is designed, with respect to the material and thickness thereof, such that at least 50% of the particle radiation or electromagnetic radiation of the specified radiation energy is absorbed, and - the detector assembly (13) comprises a plurality of acoustic sensors (14) which are arranged in a matrix over a surface and are designed to measure sound waves emerging from the absorption layer (12). The invention also relates to an imaging medical system.

The invention relates to a method for operating a particle radiation device for imaging, analyzing and / or processing an object. The invention further relates to a computer program product and to a particle radiation device for carrying out the method. The method comprises the following steps: determining a working distance; directing and / or shaping the particle beam using a converging lens to produce a first intersection of the particle beam in an objective lens; guiding and / or shaping the particle beam using the objective lens to produce a second intersection of the particle beam that can be arranged on the object; and deflecting the particle beam to a position associated with the working distance along the optical axis of the particle radiation device using a deflection device arranged in the objective lens as a function of the working distance, the deflection device being actuated by means of a control signal in such a way that aberrations generated by the objective lens are reduced.

The invention relates to a method for operating a particle radiation device for imaging, analyzing and / or processing an object. The invention further relates to a computer program product and to a particle radiation device for carrying out the method. In the method, the distance is determined, wherein the distance is given by (a) an object distance between the outer boundary of the objective lens and the object or (b) a focal plane distance between the outer boundary of the objective lens and the focal plane of the objective lens. Furthermore, a deflection device is used to deflect the particle beam into a position along the optical axis of the particle radiation device, which position is associated with the determined distance, as a function of the determined distance, the deflection device having at least one first deflection unit and at least one second deflection unit. The axial distance of the central path of the particle beam at that position along the optical axis is less than all other axial distances of the particle beam perpendicular to the optical axis of the particle radiation apparatus.

The present invention relates to a particle radiation device and an optical microscope and a method for operating the same. The method includes changing the first temperature of an object, the object being arranged at an object receiving device, and the object receiving device being movable by at least one motor operated by a power supply current. By changing the first temperature of the object, the second temperature of the object receiving device is changed from a first temperature value to a second temperature value. The method also includes: changing the power supply current of the motor from a first current value to a second current value, the power supply current being designed to fix the object receiving device; and changing the temperature of the object receiving device from the second temperature value to a third temperature value based on the heat generated by the motor, the heat being achieved by the second current value of the power supply current and being delivered to the object receiving device. TOT1‑15°C ≤ TOT3 ≤ TOT1+15°C holds, where TOT1 is the first temperature value of the object receiving device and TOT3 is the third temperature value of the object receiving device.

An apparatus (10) for producing a three-dimensional workpiece (46) by irradiating a layer of a raw material powder with electromagnetic or particle radiation comprises a process chamber (16) accommodating a carrier (12) and a powder application device (14) for applying a layer of a raw material powder onto the carrier (12). The apparatus (10) further comprises an irradiation unit (26) for selectively irradiating the layer of the raw material powder with electromagnetic or particle radiation in accordance with a geometry of a corresponding layer of the workpiece (18) to be produced. An absorption device (50) adapted to absorb thermal radiation emitted when the layer of the raw material powder is selectively irradiated with electromagnetic or particle radiation is arranged in the process chamber (16) and / or the irradiation unit (26) in a position such that the absorption device is able to absorb radiation occurring inside the process chamber (16) and / or inside the irradiation unit (26).

The application discloses a satellite orbit space environment disturbance coping method, equipment and computer program product. The method comprises the following steps: acquiring current position data and current space environment data of a target orbit, wherein the current space environment data comprises a first high-energy particle integrated flux at a target position of a high-energy particle flux and a first high-altitude atmospheric daily average atmospheric density; querying a second high-energy particle integrated flux at the target position of the high-energy particle flux and a second high-altitude atmospheric daily average atmospheric density when the target orbit environment is calm according to the current position data; calculating a high-energy particle radiation environment relative disturbance amount and a high-altitude atmospheric density maximum relative disturbance amount of the target orbit; determining a current high-energy particle radiation environment disturbance degree and a current atmospheric environment disturbance degree in combination with a disturbance degree discrimination range; and generating a risk coping suggestion. The application can accurately understand the disturbance situation of a spacecraft operating environment and improve the safety of the spacecraft in-orbit operation.

A particle alpha radiation sampler includes a scintillation cell, a Geiger counter for measuring the incidence of particle alpha radiation on the scintillation cell, a vessel defining a chamber, at least one inertial impactor, a filter, and a vacuum pump. The scintillation cell is configured to receive alpha radiation passing through air in the chamber from particulate matter collected on the filter. The inertial impactor is configured to allow passage of particles only at or below an established size threshold into the chamber. The filter is configured to collect particulate matter from the air in the chamber drawn through the inertial impactor. Finally, the vacuum pump is configured to draw air flow through the filter from the chamber and to draw air flow through the inertial impactor into the chamber.

The application discloses an anti-single-particle radiation SiC VDMOS device structure and belongs to the field of semiconductor devices.The device structure comprises an N-drift region, a P-base region, a P+ high-concentration region, a P+ low-concentration region, an N+ source region, a metal source electrode, a metal drain electrode, a gate oxide layer and a gate polysilicon layer.The N-drift region is located on the top surface of the metal drain electrode; the P-base region is in an L shape and is located on the top of the N-drift region; the P+ high-concentration region is located on the top of the N-drift region and the lower plane of the L-shaped P-base region; the P+ low-concentration region and the N+ source region are both located on the P+ high-concentration region; the metal source electrode is located on the P+ low-concentration region and the N+ source region; the gate oxide layer is located at the middle position of the top of the N-drift region and is in contact with the P-base region and the N+ source region; and the gate polysilicon layer is located above the gate oxide layer.After particle incidence, the P-base region and the P+ high-concentration region expand the electric field range, thereby inhibiting the conduction of a parasitic NPN transistor and effectively improving the anti-single-particle burnout capability of the SiC VDMOS device.

The present application belongs to the field of particle radiation measurement technology and related electronics, and particularly relates to a pulse direct sampling system and method for particle radiation measurement. The system comprises a charge conversion module, a signal conditioning output module and an AD acquisition module. The charge conversion module acquires the particle radiation charge signal output from the front end, converts it into a unipolar pulse signal and outputs it to the signal conditioning output module. The signal conditioning output module comprises a slow shaping submodule and a fast shaping submodule. The slow shaping submodule filters, shapes and amplifies the unipolar pulse signal and outputs it to the AD acquisition module. The fast shaping submodule filters, shapes and amplifies the unipolar pulse signal and outputs it as a trigger signal to the AD acquisition module. After receiving the trigger signal, the AD acquisition module directly samples the signal output by the slow shaping submodule according to the time difference between the signals output by the slow shaping submodule and the fast shaping submodule after waiting for a corresponding time.

In a method of operating an irradiation system (10) for irradiating layers of a feedstock powder with electromagnetic or particle radiation to produce a three-dimensional workpiece (110), it is determined, depending on the geometry of the respective layer of the workpiece (110) to be produced, whether a region of the layer (11) of the feedstock powder to be selectively irradiated with electromagnetic or particle radiation is affected by particulate impurities or substantially not affected by particulate impurities. When selectively irradiating a region of the layer (11) of the feedstock powder with electromagnetic or particle radiation, the energy density applied by the radiation beam (14a, 14b) to the region of the layer (11) of the feedstock powder is controlled in such a way that the energy density is higher in the case where it is determined that the region of the layer (11) of the feedstock powder is affected by particulate impurities than in the case where it is determined that the region of the layer (11) of the feedstock powder is substantially not affected by particulate impurities.

The apparatus (10) is an apparatus (10) for manufacturing three-dimensional workpieces, and includes a process chamber (12), a carrier (14) configured to receive raw material powder, an irradiation device configured to selectively irradiate electromagnetic or particle radiation onto the carrier (14) to manufacture a workpiece made from the raw material powder by an additive manufacturing method, a transmission element (18) configured to enable transmission of the electromagnetic or particle radiation irradiated by the irradiation device (16) into the process chamber (12), and a gas supply element (19) for supplying the process chamber (12) with a gas. a gas supply device (26) configured to supply gas (D) from the processing chamber (12) and having at least one gas inlet (28, 32); a gas exhaust device (34) configured to exhaust gas from the processing chamber (12) and having at least one gas outlet (36); and a flow capture (44) configured to capture gas containing particulate impurities in a flow capture region (46) located downstream of the transmission element (18) with respect to the direction of gas flow (D) entering the processing chamber (12) through the at least one gas inlet (28, 32).

The invention relates to a method for producing a supported scintillator for particle radiation, and to a supported scintillator. The supported scintillator comprises, as a substrate, a plastics film and a layer of scintillator powder which is adhesively bonded to the substrate. In the method according to the invention, the scintillator powder is applied in excess to an adhesive layer on the plastics film while the plastics film is caused to vibrate with vibrations at ultrasonic frequency. The scintillator powder is then pressed on, after which non-adhering scintillator powder is removed. The supported scintillator has a transmission of τ ≥ 0.99.

An embodiment of the present invention provides a particle radiation detection system, comprising: a detection module, adapted to detect particle radiation and convert it into an initial electrical signal; a readout module, adapted to output a detection signal based on an AC signal in the initial electrical signal; a coupling module, coupled between the detection module and the readout module, adapted to block the DC signal in the initial electrical signal and pass the AC signal in the initial electrical signal; wherein the relative position between the coupling module, the detection module, and the readout module is determined based on the size of the detection module, so that the signal-to-noise ratio of the detection signal is greater than a preset signal-to-noise ratio threshold. The above technical solution can improve the signal-to-noise ratio of the detection signal and improve the detection performance of the particle radiation detection system.

The application discloses a primary side driving protection circuit and method, a pulse control circuit and a resonant converter. The primary side driving protection circuit comprises an abnormality detection circuit, which detects whether a rising edge loss and / or a falling edge loss exists in a lower tube driving signal output by a digital timing logic circuit through an analog delay circuit; and a logic reset circuit, which performs logic operation on an output signal of the abnormality detection circuit and outputs a reset pulse to control the digital timing logic circuit to reset. The application detects whether a rising edge loss or a falling edge loss exists in a lower tube driving signal output by a primary side digital timing logic circuit through an analog delay circuit, and controls the primary side digital timing logic circuit to reset in time through a logic reset circuit. Since the analog delay circuit and the logic reset circuit do not have a latch function, the application can resist space particle radiation or other unexpected interference, so that the LLC resonant converter can recover normal work in time and can be applied to the aerospace field.

The application discloses a kind of anti single particle radiation reinforced gallium nitride high electron mobility transistor, comprising: Si substrate, GaN buffer layer, N type AlGaN layer being arranged in the top layer local position of GaN buffer layer, AlGaN barrier layer being arranged on GaN buffer layer and N type AlGaN layer, P type GaN layer being arranged above N type AlGaN layer and inside AlGaN barrier layer, surface SiN passivation layer, and drain electrode, gate electrode, source electrode;The N type AlGaN layer is generated below barrier layer between gate and drain in the application, so that output current is improved;By generating P type GaN layer and N type AlGaN layer between source and drain, the conduction band energy level can be raised, the injection of electrons from source to buffer layer under off state is blocked, the buffer layer leakage current is reduced, the internal electric field of device is weakened, the collision ionization generation of electron-hole pair is reduced, the single particle transient current is reduced, and the device radiation resistance performance is improved.

The application provides a kind of lock phase loop single particle radiation sensitive node detection method, belong to lock phase loop technical field.It includes: according to double exponential current pulse mathematical model, single particle transient pulse current source model is obtained by using piecewise linear current source fitting;Single particle transient current pulse model obtained by piecewise linear current source fitting is injected into the node of lock phase loop circuit, and circuit simulation is carried out;According to the output change of simulation result of lock phase loop, determine the sensitive node in lock phase loop circuit that is susceptible to single particle effect.This application can determine the sensitive node in lock phase loop circuit that is susceptible to single particle effect and the degree of influence by simulation, and provide guidance for the direction of radiation hardening design of lock phase loop circuit.

The application provides a SiC MOSFET and a preparation method of the SiC MOSFET, which comprises, from bottom to top, a drain metallization layer, an N+ substrate layer, an N-drift region, a current spreading region, a P-well region, a second N+ source region, a second P-base region, a first P-base region, a first N+ source region, a gate oxide, a polysilicon gate, an isolation oxide, and a source metallization layer; the first N+ source region, the second N+ source region, and the P-well region are in contact with the source metallization layer; the second N+ source region surrounds the bottom, two corners, and one sidewall of a trench gate oxide; the second N+ source region is shielded by the P-well region and the second P-base region, and is isolated from the current spreading region and the N-drift region. The application effectively suppresses a strong electric field of the gate oxide caused by high-energy charged particle radiation, and greatly improves the anti-single-particle gate punch-through capability of the trench type SiC MOSFET.