145 results about "Particle radiation" patented technology

The invention discloses an anti-single event upset latch circuit structure with fewer sensitive nodes. The anti-single event upset latch circuit structure comprises a clock filter circuit, a delay filter circuit, a latch circuit and a stacked inverter circuit. The clock filter circuit is used for filtering single-particle transient pulses at a clock end and providing clock signals for the latch circuit. The delay filter circuit is used for filtering single-particle transient pulses of a data end and providing input signals for the latch circuit. And the latch circuit is used for realizing data transmission and latch, and maintaining a correct signal output state and level correction after single-particle radiation in a latch state. The stacked inverter circuit is used for providing an inversion signal. The designed latch circuit can realize single-particle transient reinforcement and single-particle transient pulse filtering, has few circuit sensitive nodes, is good in reinforcement effect, and is simple and easy to realize.

The invention provides a muon detector for measuring soil moisture, and belongs to the technical field of testing by utilizing wave or particle radiation. The muon detector comprises a tubular scintillator which is used for detecting muons in cosmic rays and emitting scintillation light, and at least two outer optical fibers which are equal in screw pitch and used for collecting and transmitting the scintillation light are spirally wound on the periphery of the tubular scintillator. At least two inner optical fibers which are equal in screw pitch and used for collecting and transmitting scintillation light are spirally arranged on the inner circumference of the tubular scintillator, and the rotation direction of each inner optical fiber is opposite to that of each outer optical fiber, so that the tubular scintillator is divided into a plurality of latticed detection units in the internal and external directions. Compared with the prior art, the latticed detection unit is smaller, the existing scintillation light signal can only be acquired by the outer optical fiber, the scintillation light signal can also be acquired by the inner optical fiber, the optical fiber closer to the optical fiber can be acquired by the optical fiber, and the inner optical fiber and the outer optical fiber form an acquisition network, so that the detection precision is higher.

The present application provides a plan adjustment method for radiotherapy, a radiotherapy system, and a related apparatus. The method comprises the following steps: S1, acquiring simulated CT information and treatment plan information of a patient, the simulated CT information comprising a simulated CT image and region division information corresponding thereto; S2, measuring, in the current session of radiotherapy corresponding to the treatment plan information, Cerenkov radiation emitted by the patient due to particle radiation exposure; S3, acquiring irradiation exposure dose information of an irradiation target region and an organ at risk in the treated region; S4, determining, according to the dose information of the target region and the organ at risk and the treatment plan, whether the treatment plan for subsequent irradiation fractions needs adjustment; and S5, if so, adjusting the treatment plan for subsequent fractions according to dose distribution of an irradiation exposure region and a therapeutic prescription corresponding to the patient. In the present application, the Cerenkov radiation emitted by the patient is detected to judge the quality of the treatment plan, which improves the accuracy of plan adjustments in radiotherapy and the safety of radiotherapy.

The invention discloses a simulation analysis method for single-particle electric leakage of a wide bandgap semiconductor device, and the method comprises the steps: constructing a geometric model of a to-be-simulated power device, calculating the vacancy defect density of the power device, carrying out the two-dimensional modeling and grid division, building an electrical model of the power device, and fitting an electrical curve of the power device; then, a collision ionization model after high-energy particle incidence is introduced, mobility and electric leakage degradation parameters are optimized, and an electric leakage degradation model corresponding to the power device is established; and finally, carrying out damage mechanism analysis, extracting the change of microscopic physical parameters of the power device along with time by changing influence parameters in the radiation process, and carrying out reinforcement and optimization on the power device. According to the method, the physical processes of different particle radiation devices can be accurately simulated, different microscopic physical parameters in the electric leakage process of the wide bandgap semiconductor device are extracted, and a technical basis is provided for radiation effect mechanism analysis and reliability evaluation of the wide bandgap semiconductor device by establishing different electric leakage models.

Systems and methods for guiding radiation therapy including providing particle radiation to a region of interest of a subject and receiving volumetric ionizing radiation acoustic imaging (iRAI) data and ultrasound imaging data from the region of in response the particle radiation. Further, from the iRAI data and the ultrasound imaging, a position of the particle radiation in the region of interest is determined, that position being a treatment position of the particle radiation. Further, the systems and methods determine one or more parameters of the particle radiation for adjusting in response to the determination of the position.

The invention discloses a satellite orbit space environment disturbance coping method and device and a computer program product, and the method comprises the steps: obtaining the current position data and current space environment data of a target orbit, the current space environment data comprises a first high-energy particle integral flux at a high-energy particle flux target position and a first upper atmosphere daily average atmospheric density; according to the current position data, querying a second high-energy particle integral flux and a second upper atmosphere daily average atmospheric density at the high-energy particle flux target position when the target orbit environment is quiet; calculating the relative disturbance quantity of the high-energy particle radiation environment of the target orbit and the maximum relative disturbance quantity of the atmospheric density of the upper layer; determining the current high-energy particle radiation environment disturbance degree and the current atmospheric environment disturbance degree in combination with the disturbance degree judgment range; and generating risk coping suggestions. According to the invention, the operation environment disturbance condition of the spacecraft can be accurately known, and the in-orbit operation safety of the spacecraft is improved.

The invention relates to a redundant feedback latch multilevel anti-single-particle reinforced trigger of a FinFET (FinFET) process, which comprises a data input structure, a clock input structure, four clock control structures, a delay structure, a data master latch structure, a data slave latch structure and a data output structure, the trigger latches data for both the data master latch structure and the data slave latch structure by using a redundancy feedback circuit, and delays one path of data by using a delay structure to filter external single-particle transient pulses at a data end; through a redundancy feedback latch structure and a delay unit, the circuit realizes multi-dimensional reinforcement of single-particle unit / multi-bit upset and single-particle transient, and the single-particle radiation reinforcement resistance of the trigger is significantly improved. In addition, a design reinforcing method combining a circuit and a layout is preferably adopted, the number of Fins in unit grid spacing is designed to be the maximum, an interdigital structure is used for devices at sensitive nodes, meanwhile, the sensitive nodes are arranged in an isolated mode, and the single-particle multi-bit upset resisting capacity is further enhanced.

The invention provides a transformer substation secondary equipment soft error fault simulation injection method and system, and belongs to the field of power system automation, and the method comprises the steps: carrying out chip particle effect modeling and simulation testing based on the Monte Carlo principle, carrying out the simulation analysis of the influence of particle radiation on a chip storage part, and obtaining a simulation result; soft error fault injection is carried out by changing data values of different memory units in combination with characteristics and rules of particle radiation effect analogue simulation, so that abnormal distribution, fault types and related statistical information of bottom-layer memory units are obtained, and behavior performance of secondary equipment during data displacement of different units of the memory is obtained; and carrying out influence analysis on failure waves and a fault range. The method can quickly, economically and effectively verify the function and performance of the secondary equipment under the condition of abnormal data displacement, scientifically assesses the actual harmfulness of the memory data fault of the secondary equipment of the transformer substation, and improves the safety and reliability of the secondary equipment of the transformer substation in actual application.

The invention provides an SRAM (Static Random Access Memory) storage unit anti-single particle radiation reinforcement method and system, and relates to the technical field of microelectronics and circuit structure design, a redundant node coupled with a main storage node of an SRAM storage unit is constructed, and the redundant node is used for redundant storage of the logic state of the main storage node; the polarity of a main storage node is reinforced by configuring the main storage node into a circuit structure fully surrounded by a single-type transistor; wherein the redundant node and the main storage node after polarity reinforcement are integrated into a reinforced SRAM (Static Random Access Memory) storage unit. According to the method, circuit-level fusion and collaborative design are carried out on redundancy reinforcement and polarity reinforcement, so that the single event upset resistance of the SRAM unit is improved, and an efficient and enforceable reinforcement design method is provided.

The invention provides an evaluation system for space single particle failure of a power device, which comprises a multifunctional test board, a power supply bias module and a remote controller, and is characterized in that the multifunctional test board comprises an extensible power device interface used for connecting multiple different types of to-be-tested power devices; the power supply bias module is connected with the multifunctional test board and is used for providing bias voltage for the to-be-tested power device and monitoring current characteristics of the to-be-tested power device; the remote controller is connected with the power supply bias module, and is used for setting a bias voltage corresponding to the power device to be tested, controlling the power supply bias module to provide the bias voltage, obtaining current characteristics, and evaluating the space single particle failure of the power device to be tested according to the bias voltage and the current characteristics; wherein the multifunctional test board and the power supply bias module are arranged in a space single-particle radiation environment, and the remote controller is arranged outside the space single-particle radiation environment.

Provided in the present application are an arc therapy device and an operation method and device therefor, and a particle accelerator, a magnetic-field adjustment apparatus, a computer-readable storage medium and a computer program product. The particle accelerator, which is applied to a radiotherapy system, rotates along with a treatment frame during the rotation of the treatment frame. The magnetic-field adjustment apparatus is used for adjusting a particle deflection magnetic field in the particle accelerator on the basis of a change in the angle of a frame, such that under the action of the particle deflection magnetic field, particle beams generated by a particle radiation source meet a preset particle beam condition, which is used for indicating preset ranges of one or more parameters of the particle beams, i.e., the energy of particle beams, the size of beam spots and positions of beam spots. By means of the present application, it is ensured that changes in related parameters of particle beams are within an acceptable range during the rotation of a treatment frame.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor), and discloses a SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device for improving single-particle radiation recombination efficiency, which comprises a drain electrode, a semiconductor epitaxial layer, a metal source electrode and a grid electrode, and is characterized in that an isolation medium is deposited on the outer surface of the grid electrode; the semiconductor epitaxial layer comprises a substrate layer, an epitaxial layer, a P well layer and a heavily doped N well layer; the P well layer comprises a lightly doped P well layer and a heavily doped P well layer; p-type doped regions are formed between the adjacent lightly doped P well layers through ion implantation, and N-type impurity ions are injected into the P-type doped regions to form N-type polycrystalline silicon. According to the invention, the P-type doped region is formed by injecting P-type impurities in the SiC MOSFET device, the N-type polycrystalline silicon is formed by ion injection in the P-type doped region, and the N-type polycrystalline silicon is in short circuit with the source metal, so that the trench structure transfers a strong electric field at a gate oxide interface to the bottom of the JFET region, the electric field intensity in the thin gate oxide is greatly reduced, and the single-particle gate penetration resistance of the SiC MOSFET device is improved.

The invention discloses a single event upset cross section simulation method based on TCAD-SPICE-Geant4 joint simulation, and belongs to the technical field of integrated circuit radiation effect and reinforcement. The method comprises the following steps: firstly, extracting a critical charge value for inducing single event upset of an integrated circuit through TCAD-SPICE joint simulation; secondly, for a single-tube device at a circuit sensitive node, TCAD is used for simulating transient current pulse curves of a single-particle incident device at different positions, and charge collection weights at different positions are extracted; using Geant4 simulation particles to irradiate the quantity of electric charges generated at different positions of the device; and finally, calculating to obtain the single event upset cross section of the circuit. The simulation method has high reliability, can accurately predict the sensitive degree of the integrated circuit to single particle radiation, and provides theoretical guidance for subsequent circuit-level radiation hardening design.

A radiation device comprises at least a vacuum chamber (1), an electromagnetic accelerator (8) for generating a primary energy beam of ions inside the vacuum chamber (1), and a layer of material (S) carried by a support (4) rotating in the vacuum chamber (1) to generate a flow of particles when a series of nuclear fusion reactions are triggered on the material (S) thanks to the energy of said beam, and wherein the support (4) is hollow and sealed defining a rotating three-dimensional surface that surrounds a containment volume for a cooling liquid in heat exchange with the layer of material (S), such rotating three-dimensional surface defining a heat exchange surface wetted by the liquid, and wherein a level of the free surface of the liquid on the heat exchange surface moves upwards in use due to the action of the centrifugal acceleration generated by the rotation of the support (4).

A kind of anti-radiation reinforced SiC super-junction JFET structure and preparation method, from bottom to top are in order: drain metallization layer, N+ substrate layer, N buffer layer, P column region, N column region, P-base region, current expansion region, N+ source region, P+ gate region, isolation dielectric layer, gate metallization layer, source metallization layer.P column region and N column region are arranged alternately on the upper surface of N buffer layer, P column region is symmetrically arranged, and N column region is arranged between two P column regions.P column region and P-base region form a P-type doped region as a whole, and are connected with source metallization layer.Electrically conductive channel structure is formed between P+ gate region and P-base region, and the opening and closing of channel are realized by controlling the voltage on P+ gate region.The application effectively solves the problem of electric field concentration caused by high-energy charged particle bombardment in the device, reduces local high temperature, and greatly improves the anti-single-particle radiation capability of SiC JFET.

The present invention discloses a radiation-hardened LDMOS device structure and a preparation method, which belongs to the field of integrated circuits, and includes a P-type silicon substrate, an N-type buried layer, a P-epitaxial layer, a P-body region, an N-drift region, a Psink heavily doped region, an N+ heavily doped region, a P+ heavily doped region, an STI region, and a polycrystalline gate region. The polycrystalline gate region is used to cut off the leakage channel between the drain and the source, thereby improving the total dose radiation resistance of the device; the N-type buried layer in the structure is located between the P-type silicon substrate and the P-epitaxial layer, so that the device forms potential isolation and realizes the high-side application of the device; the Psink heavily doped region is added at the P-body region position, and the injection depth of the heavily doped region is increased at the same time, so as to reduce the path length and resistivity of the non-equilibrium carrier flowing through the P-body region, and improve the single particle radiation resistance of the device.

The present invention provides: a scintillator which is reduced in the intensity of the afterglow, while having increased luminous intensity; and a charged particle radiation apparatus. A scintillator according to the present invention is characterized in that: a base material, a buffer layer, a light emitting part and a first conductive layer are sequentially stacked in this order; the light emitting part contains one or more elements that are selected from the group consisting of Ga, Zn, In, Al, Cd, Mg, Ca and Sr; and a second conductive layer is provided between the base material and the light emitting part.

The invention relates to a gas supply device, a particle radiation apparatus, a method for operating a gas supply device, a method for operating a particle radiation apparatus, and a computer program product, the gas supply device having a first precursor reservoir for receiving a first precursor, a second precursor reservoir for receiving a second precursor, and a supply unit for supplying the first precursor in gaseous state and / or the second precursor in gaseous state onto a surface of an object. A first guiding device is arranged between the first precursor reservoir and the supply unit. A second guiding device is arranged between the second precursor reservoir and the supply unit. A first valve is arranged between the first guiding device and the supply unit. A second valve is arranged between the second guiding device and the supply unit. A control valve for supplying the first precursor in gaseous state and / or the second precursor in gaseous state is connected to the first valve, the second valve and the supply unit.

This invention provides a proton imaging method and imaging device, applicable to the fields of proton imaging technology and signal processing technology, particularly in the field of particle radiation imaging technology. The method includes: determining a virtual source position based on an initial two-dimensional dose distribution of a proton beam acquired without an imaging object; obtaining multiple sub-beam propagation paths from the virtual source position to the multiple predetermined sub-beam center positions based on the virtual source position and multiple predetermined sub-beam center positions on a predetermined plane; obtaining sub-beam data pairs corresponding to the sub-beam propagation paths and the two-dimensional dose distribution based on the two-dimensional dose distribution and the lateral distribution components determined along the sub-beam propagation paths; obtaining multiple water equivalent path lengths corresponding to at least one projection angle through an iterative algorithm based on the multiple sub-beam data pairs corresponding to at least one projection angle; and performing image reconstruction based on the multiple water equivalent path lengths corresponding to at least one projection angle to obtain a target image of the imaging object.

The present invention discloses a field plate terminal structure with single particle radiation reinforcement and a preparation method thereof, belonging to the field of microelectronics technology. The structure includes a substrate, an epitaxial layer, a device main junction region and a carrier lifetime control region, a field oxide layer, an anode, a field plate, which is arranged on the field oxide layer, and a cathode, wherein the anode is in contact with the field plate; the carrier lifetime control region is located in the region of the field plate corresponding to the epitaxial layer. The present invention reduces the number of hole carriers moving to the edge of the main junction by introducing a carrier lifetime control layer (i.e., the carrier lifetime control region) on the upper surface layer of the semiconductor material in the terminal region, thereby alleviating the current density and heat accumulation at the edge of the main junction and improving the SEB resistance of the field plate terminal structure.

The invention relates to a powder delivery system for delivering a raw material powder to a device for producing a three-dimensional workpiece by irradiating a layer of the raw material powder by means of electromagnetic radiation or particle radiation. The powder delivery system comprises: a conveyor line designed to convey a flow of gas at least along a section and a flow of powder driven by the flow of gas at least along the section; and a conveying device designed to convey the gas flow through the conveying line. The powder delivery system further includes a first tank connected to the conveyor line for supplying the powder for the additive manufacturing process to the device; and at least one overflow vessel connected to the conveyor line for receiving excess powder accumulated during the additive manufacturing process. The powder conveying system further comprises a buffer container connected to the conveying line and used for supplying the powder to be screened to the screening equipment; and the screening equipment is used for screening the powder to be screened and distributing the screened powder. The powder delivery system includes an interface for an external tank connected to the conveyor line for introducing fresh or impure powder into the powder delivery system. The powder delivery system further comprises a controller for controlling the powder delivery system such that the system performs at least one of the following delivery processes: a. Delivering the screened powder into the first tank; b. Conveying the powder from the at least one overflow container into a buffer container; and c. Conveying the powder from the outer tank into the buffer container.

The invention relates to a scanner system (10) for use in an apparatus (100) for producing a three-dimensional workpiece by applying electromagnetic radiation or particle radiation to a layer of a raw material powder, the scanner system (10) comprising a pivotable scanner mirror (12) having a first surface (14) configured to be impinged by an irradiation beam (116) emitted by a radiation source (114). Furthermore, the scanner system (10) includes a scanner mirror cooling device (22) having a first coolant supply device (26) configured to direct a first coolant flow (28) over the first surface (14) of the scanner mirror (12), and / or directing a first coolant flow onto a first surface of the scanner mirror.

The invention relates to a method for the surface treatment of a substrate (B), in particular as a preparation step for a method for connecting the substrate to a further substrate, comprising:-providing a substrate (B) having a bonding surface provided for connection,-treating (100) the substrate (B) at least in partial regions of the bonding surface in order to form an amorphous layer (C) having a first thickness (D1), wherein primary particle radiation is preferably used for forming the amorphous layer (C), and-reducing (200) the layer thickness of the amorphous layer (C), preferably to a second thickness (D2).

The embodiment of the utility model discloses a power supply circuit and a satellite power supply system, a control module is arranged to control one power supply module to work according to a detection voltage detected by a voltage detection module, that is, the power supply module of the power supply circuit works in a cold backup mode, and only one power supply module works at the same time. The power supply module which does not work is not affected by space particle radiation, so that even if one power supply module is damaged due to the space particle radiation influence, other power supply modules can continuously supply power to the load, and the power supply reliability of the power supply circuit is improved. The isolation module is connected between the output end of the power supply module and the load, the isolation module can isolate mutual influence between different power supply modules, and the power supply reliability of the power supply circuit is further improved. Moreover, the power supply circuit is simple in structure and easy for engineering realization, and has a wide application prospect in the field of microsatellites.

The invention relates to an acoustic radiation detector (4) for high-energy radiation, comprising a solid absorption layer (12) and a detector assembly (13) which is acoustically coupled to the absorption layer (12), wherein - the absorption layer (12) is designed, with respect to the material and thickness thereof, such that at least 50% of the particle radiation or electromagnetic radiation of the specified radiation energy is absorbed, and - the detector assembly (13) comprises a plurality of acoustic sensors (14) which are arranged in a matrix over a surface and are designed to measure sound waves emerging from the absorption layer (12). The invention also relates to an imaging medical system.

The invention relates to a method for operating a particle radiation device for imaging, analyzing and / or processing an object. The invention further relates to a computer program product and to a particle radiation device for carrying out the method. The method comprises the following steps: determining a working distance; directing and / or shaping the particle beam using a converging lens to produce a first intersection of the particle beam in an objective lens; guiding and / or shaping the particle beam using the objective lens to produce a second intersection of the particle beam that can be arranged on the object; and deflecting the particle beam to a position associated with the working distance along the optical axis of the particle radiation device using a deflection device arranged in the objective lens as a function of the working distance, the deflection device being actuated by means of a control signal in such a way that aberrations generated by the objective lens are reduced.

The invention relates to a method for operating a particle radiation device for imaging, analyzing and / or processing an object. The invention further relates to a computer program product and to a particle radiation device for carrying out the method. In the method, the distance is determined, wherein the distance is given by (a) an object distance between the outer boundary of the objective lens and the object or (b) a focal plane distance between the outer boundary of the objective lens and the focal plane of the objective lens. Furthermore, a deflection device is used to deflect the particle beam into a position along the optical axis of the particle radiation device, which position is associated with the determined distance, as a function of the determined distance, the deflection device having at least one first deflection unit and at least one second deflection unit. The axial distance of the central path of the particle beam at that position along the optical axis is less than all other axial distances of the particle beam perpendicular to the optical axis of the particle radiation apparatus.

The present invention relates to a particle radiation device and an optical microscope and a method for operating the same. The method includes changing the first temperature of an object, the object being arranged at an object receiving device, and the object receiving device being movable by at least one motor operated by a power supply current. By changing the first temperature of the object, the second temperature of the object receiving device is changed from a first temperature value to a second temperature value. The method also includes: changing the power supply current of the motor from a first current value to a second current value, the power supply current being designed to fix the object receiving device; and changing the temperature of the object receiving device from the second temperature value to a third temperature value based on the heat generated by the motor, the heat being achieved by the second current value of the power supply current and being delivered to the object receiving device. TOT1‑15°C ≤ TOT3 ≤ TOT1+15°C holds, where TOT1 is the first temperature value of the object receiving device and TOT3 is the third temperature value of the object receiving device.

An apparatus (10) for producing a three-dimensional workpiece (46) by irradiating a layer of a raw material powder with electromagnetic or particle radiation comprises a process chamber (16) accommodating a carrier (12) and a powder application device (14) for applying a layer of a raw material powder onto the carrier (12). The apparatus (10) further comprises an irradiation unit (26) for selectively irradiating the layer of the raw material powder with electromagnetic or particle radiation in accordance with a geometry of a corresponding layer of the workpiece (18) to be produced. An absorption device (50) adapted to absorb thermal radiation emitted when the layer of the raw material powder is selectively irradiated with electromagnetic or particle radiation is arranged in the process chamber (16) and / or the irradiation unit (26) in a position such that the absorption device is able to absorb radiation occurring inside the process chamber (16) and / or inside the irradiation unit (26).

The application discloses a satellite orbit space environment disturbance coping method, equipment and computer program product. The method comprises the following steps: acquiring current position data and current space environment data of a target orbit, wherein the current space environment data comprises a first high-energy particle integrated flux at a target position of a high-energy particle flux and a first high-altitude atmospheric daily average atmospheric density; querying a second high-energy particle integrated flux at the target position of the high-energy particle flux and a second high-altitude atmospheric daily average atmospheric density when the target orbit environment is calm according to the current position data; calculating a high-energy particle radiation environment relative disturbance amount and a high-altitude atmospheric density maximum relative disturbance amount of the target orbit; determining a current high-energy particle radiation environment disturbance degree and a current atmospheric environment disturbance degree in combination with a disturbance degree discrimination range; and generating a risk coping suggestion. The application can accurately understand the disturbance situation of a spacecraft operating environment and improve the safety of the spacecraft in-orbit operation.