This invention relates to the field of power
semiconductor technology, specifically to an IGBT device resistant to single-event
radiation and its fabrication method. By setting a P-type buried layer region at the bottom of the second trench, the strong
electric field at the bottom of the trench is effectively weakened. Simultaneously, the P-type buried layer provides additional hole pathways, accelerating the extraction process of transient
electron-hole pairs generated after high-
energy particle incident, thereby effectively reducing the risk of single-event burn-out and improving the reliability of the device under
irradiation. Furthermore, by introducing an N-type buried layer region at the bottom of the first trench, the
electron injection effect is enhanced, increasing the carrier concentration in the on-state and reducing the on-state
voltage drop. This structure also helps suppress the accumulation of holes below the gate during single-event incident, weakening the transient high
electric field below the gate and improving the device's single-event tolerance. By reducing the depth of the first trench, the
gate capacitance of the device can be effectively reduced, increasing the switching speed and reducing switching losses. In summary, this invention maintains
radiation resistance while also ensuring high-frequency
electrical performance.