33 results about "Particle irradiation" patented technology

The invention discloses an III-group nitride device with single particle irradiation resistance. According to the invention, the hole storage layer is introduced between the buffer layer and the channel layer of the epitaxial layer structure, and the hole storage layer forms a hole potential well on the energy band structure so as to effectively collect irradiation-induced excess holes in the channel layer; meanwhile, an extraction electrode and a second source electrode are arranged to respectively collect irradiation-induced excess holes in a nearby area below the grid electrode and between the grid electrode and the source electrode. Wherein the extraction electrode is arranged between the grid electrodes which are sequentially arranged at intervals, and the extraction electrode and the second source electrode are connected with the first source electrode through the metal interconnection layer. The single particle irradiation resistance of the device can be effectively improved, the manufacturing process is compatible with the existing process, and complex process steps do not need to be additionally introduced.

The invention discloses a silicon carbide epitaxial wafer for inhibiting irradiation induced defects, a preparation method and application, and belongs to the technical field of semiconductor materials, the silicon carbide epitaxial wafer comprises an n-type or p-type silicon carbide wafer as a substrate, and an epitaxial layer doped with group IV atoms is epitaxially grown on the substrate. The preparation method comprises the following steps: cleaning an n-type or p-type silicon carbide wafer; placing the cleaned silicon carbide wafer in epitaxial growth equipment and keeping a vacuum environment; raising the temperature of the vacuum environment, and introducing monosilane, propane, nitrogen / hydrogen carrying trimethyl aluminum and gas containing at least one atom of germanium, tin and lead after the temperature is stable; and growing an epitaxial layer on the silicon carbide wafer. The silicon carbide epitaxial wafer is used for producing an anti-radiation silicon carbide power device. According to the invention, generation of carbon vacancies in a silicon carbide device in an irradiation process and minority carrier lifetime degradation caused by the generation of the carbon vacancies can be effectively inhibited, so that the reliability of the silicon carbide epitaxial wafer and a power device thereof under particle irradiation application is improved.

The present invention discloses a SiCMOSFET device resistant to single-particle irradiation and a method for manufacturing the same. The device sequentially adopts the method of second-conductivity-type epitaxy, JFET region trench etching, and first-conductivity-type SiC epitaxy on the first-conductivity-type drift region, and utilizes a deep second-conductivity-type well region to form a semi-superjunction structure near the surface of the device. While ensuring the reverse withstand voltage of the device, the first-conductivity-type doping concentration in the JFET region is increased, thereby reducing the resistance of the JFET region. An additional thickened oxide layer is provided above the JFET region to reduce the electric field strength of the gate dielectric region during single-particle irradiation. At the same time, the doping concentration of the second-conductivity-type epitaxial region slowly decreases in a gradient in the direction pointing to the drift region. This structure can simultaneously improve the device's resistance to single-particle burnout and single-particle gate penetration, and improve the device's static electrical characteristics. This structure can be used in combination with irradiation reinforcement measures such as an epitaxial buffer layer and local SOI to further enhance the radiation resistance.

The application discloses a kind of Gauss light doping source junctionless type tunneling field effect transistor, comprising: source region, pocket area, channel region, drain region, polar grid, control grid, source, drain, first dielectric layer, second dielectric layer and third dielectric layer;Source region is connected with source and pocket area, and adopts Gauss light doping InAs material;Pocket area is connected with channel region, and is InAs / GaAsSb heterojunction structure;Channel region is connected with drain region;Drain region is connected with drain;First dielectric layer is located on the two sides of source region;Polar grid is located on the first dielectric layer;Second dielectric layer is located on the two sides of a part of channel region;Third dielectric layer is located on the two sides of another part of channel region;Control grid, including tunneling gate and auxiliary gate.The application further discloses a kind of Gauss light doping source junctionless type tunneling field effect transistor's single particle irradiation effect simulation optimization method, can provide more comprehensive simulation data, and device optimization effect is better.

The application discloses a single event upset cross section test method and device, electronic equipment and storage medium, which are applied to three-dimensional integrated static random access memory (SRAM). The method comprises the following steps: obtaining a structure model of a target SRAM, wherein the structure model comprises a plurality of stacked layers; performing particle irradiation simulation on the structure model to obtain the energy deposited by incident particles in each stacked layer of the structure model and the particle ionization radius, wherein the particle ionization radius is the radius of a track generated when the particles are incident on each stacked layer; determining the size of a sensitive region of each stacked layer; obtaining a target SRAM simulation model according to the structure model of the target SRAM and the size of the sensitive region of each stacked layer; performing particle irradiation simulation on the target SRAM simulation model to determine the number i of flipped bits of the target SRAM under particle irradiation and the number of i-bit flip events, and obtaining the size of a single event upset cross section of the target SRAM based on the number i of flipped bits and the number of i-bit flip events.

The present invention provides a particle measurement device that measures the size of a particle by irradiating the particle in a liquid sample with light, and that suppresses variation in detection sensitivity caused by individual characteristics (machine difference) of the device. This particle measurement device measures the size of a particle in a liquid sample by irradiating the particle with light, and corrects the size of the particle using a correction function in which the irradiation position of a spot in at least one of the X, Y and Z directions is used as an input value.

The utility model discloses a static three-dimensional water tank for BNCT midpoint dose measurement, which comprises a three-dimensional water tank, a static measurement device is arranged on the three-dimensional water tank, and a plurality of thermoluminescent sheet detectors for measuring multi-point dose in the three-dimensional water tank are arranged on the static measurement device. According to the static three-dimensional water tank for BNCT midpoint dose measurement, TLD is conveniently taken and placed through the static measurement device, accurate measurement of particles is completed, metering of multiple points in the water tank can be simultaneously measured in cooperation with a TLD detector, time can be saved, particle irradiation time can be shortened, and measurement of multiple positions can be completed at a time; the problem that a dynamic water tank is not suitable for multi-point measurement is solved. The problem that a dynamic three-dimensional water tank is not applicable is solved; the dosage of multiple point locations in the three-dimensional water tank can be measured at the same time in cooperation with TLD, and compared with single-point-location measurement of a dynamic three-dimensional water tank, the particle irradiation time can be shortened, and the detection efficiency can be improved.

This disclosure provides a method, apparatus, electronic device, and medium for reconstructing the dose distribution of a particle irradiation target area. The method includes: monitoring the irradiation information of particles on a monitoring plane along the incident path, including beam spot position, beam spot size, and dose corresponding to each position, wherein the particles include particles of various energies; calculating the dose of particles of different energies at different depth planes in the target area based on the particle dose ratio of particles of different energies at different depth planes in the target area to the monitoring plane; calculating the particle dose of each energy particle at each position in the target area at different depth planes based on the particle distribution pattern of each energy particle on the monitoring plane; constructing a planar dose model of the target area at different depth planes based on the particle dose of each energy particle at each position in the target area at different depth planes, and reconstructing a three-dimensional dose model by superimposing the models; and fusing the three-dimensional dose model with a three-dimensional image of the target area to obtain a three-dimensional particle dose distribution model of the target area.

This application discloses a memory single-event irradiation testing system and method based on multi-dimensional intelligent chart analysis. The system includes a lower-level data acquisition module and a higher-level multi-dimensional intelligent analysis platform. The lower-level data acquisition module writes reference data to the full address of the memory according to the test mode configured by the higher-level computer. During irradiation, it reads the full address data of the memory in real time and compares it with the reference data to capture single-event flip error addresses and error data. The error addresses, error data, real-time irradiation parameters, and test configuration parameters are packaged into raw data and sent to the higher-level computer. The higher-level multi-dimensional intelligent analysis platform is used to configure the test mode, memory operating parameters, and irradiation-related parameters, and generates multi-dimensional intelligent charts based on the raw data. This application provides accurate and reliable data support and visual decision-making basis for memory radiation resistance design optimization, sensitive bit protection strategy formulation, and reliability assessment.

A system and method for stress testing a sample, the system comprising a high-intensity laser unit and a target for laser-matter interaction, wherein the high-intensity laser unit delivers an intensity of at least 1013 W / cm2 on the target, and resulting laser-accelerated particles generated by the target irradiate the sample.

The present application relates to a kind of particle irradiation and high temperature liquid corrosion coupling effect test device and test method.The test device includes particle accelerator, first corrosion liquid shell, first heating piece and purging piece, and particle accelerator includes accelerator main machine, beam pipeline and transmission film.In the test device, the multi-physical field coupling environment of high temperature, irradiation and corrosion liquid can be formed, and the multi-physical field coupling physical examination for the test of in-pile material is provided.In addition, in the test device, mainly through the cooperation design of beam pipeline, transmission film, purging piece and first corrosion liquid shell, particle flow can be introduced to atmospheric environment, and then high temperature-irradiation-corrosion coupling test is carried out in first corrosion liquid shell, the influence of corrosion liquid on accelerator main machine is effectively avoided, so that accelerator main machine can be effectively protected, and the safety of test is improved.

This invention discloses a single-event upset (SET) cross-section simulation method based on TCAD-SPICE-Geant4 co-simulation, belonging to the field of integrated circuit radiation effects and hardening technology. First, the critical charge value inducing SET upset in integrated circuits is extracted using TCAD-SPICE co-simulation. Then, for single-transistor devices at sensitive circuit nodes, TCAD is used to simulate the transient current pulse curves at different locations of the device under single-event radiation, extracting the charge collection weights at different locations. Next, Geant4 is used to simulate the charge generated at different locations of the device under particle irradiation. Finally, the SET upset cross-section of the circuit is calculated. This simulation method has high reliability and can accurately predict the sensitivity of integrated circuits to single-event radiation, providing theoretical guidance for subsequent circuit-level radiation hardening design.

Provided is a charged particle irradiation device that can adapt to changes in charged objects, environments, etc. as quickly as possible and adaptively irradiate charged particles even during operation. Provided is a charged particle irradiation device, comprising: a pre-irradiation state detection unit that detects the charged state of the charged object before irradiation with charged particles, i.e., the pre-irradiation charged state; an irradiation time generation unit that generates an irradiation time based on past irradiation times of charged particles and the charged state of the charged object after the irradiation; an irradiation unit that irradiates the charged object in the pre-irradiation charged state based on the generated irradiation time; a post-irradiation state detection unit that detects the charged state of the charged object after irradiation with charged particles, i.e., the post-irradiation charged state; a machine learning unit that causes a machine learning model to learn the correspondence between the pre-irradiation charged state, the post-irradiation charged state, and the generated irradiation time; and an end determination unit that causes the pre-irradiation state detection unit, the irradiation time generation unit, the irradiation unit, the post-irradiation state detection unit, and the learning unit to repeat operations until the machine learning model meets the learning end condition.

The invention discloses an FPGA single event upset detection system and method, and relates to the field of FPGA testing, and the system comprises an upper computer, a test bottom plate and a test daughter board. The test daughter board comprises an FPGA to be tested; the test base plate configures an original code stream file sent by the upper computer to the to-be-tested FPGA, gradually increases the same fluence to perform single-particle irradiation tests of multiple test periods on the to-be-tested FPGA, and reads back the read-back code stream file of each test period; and the upper computer compares the read-back code stream file of the current test period with the read-back code stream file of the previous test period, determines the occurrence position of single event upset in the current test period, and accumulates the single event upset number of each occurrence position to obtain the total single event upset number under the total fluence of the current test period. The problems that the single event upset occurrence position cannot be detected and the situation that single event upset of the same circuit unit is carried out for multiple times cannot be detected are solved.

The invention discloses a risk control-based COTS device single particle resistance evaluation grading method, which comprises the following steps of: firstly, carrying out key grade division on a single machine, and then carrying out irradiation application assurance grade evaluation on a COTS device; when the COTS device is in the irradiation guarantee level I, a single-particle irradiation test is carried out according to related standards, and if test data meet single-machine single-particle selection conditions, a conclusion that the selected COTS device meets the irradiation guarantee level I is given; when the COTS device is in an irradiation guarantee grade II or grade III, firstly judging whether the selected COTS device has single event test data of a historical batch or not, and judging whether the data has technical state change or not compared with a target installation batch or not; and then judging whether the test data meets the single-machine single-particle selection condition or not, analyzing which specific indexes do not meet the condition, reinforcing the indexes which do not meet the condition, then carrying out the irradiation test again, and judging whether the test data meets the single-machine single-particle selection condition or not.

A space solar cell particle irradiation test system under a photo-thermal condition comprises: a vacuum chamber, the wall surface of which is provided with a particle beam port and a light transmitting port; the sample table is arranged in the vacuum cavity, and the table surface of the sample table obliquely faces the particle beam port and the light transmitting port at the same time; the temperature control module is in heat conduction connection with the sample table; the particle irradiation module comprises a particle gun which is arranged outside the vacuum cavity and is aligned with the particle beam port; the illumination simulation module comprises a solar simulator which is arranged outside the vacuum cavity and is aligned with the light transmitting opening; and starting a particle gun in the vacuum cavity under the conditions of temperature and illumination, and performing particle irradiation on the solar cell according to a preset particle beam flow and irradiation time. The device can effectively simulate particle irradiation attenuation of the space solar cell under illumination and high and low temperature conditions, and is especially suitable for irradiation attenuation simulation of the solar cell in different tracks.

This application provides a PCB substrate, comprising: a substrate body; an irradiation hole penetrating the substrate body; multiple chip test areas of different sizes nested within the substrate body, surrounding the irradiation hole; each chip test area including a die-attachment area and a gold finger area surrounding the die-attachment area; and a breakable structure disposed between adjacent chip test areas, the strength of which is less than the strength of the substrate body. In use, a test laser beam can directly irradiate the bottom of the chip through the irradiation hole, then penetrate the silicon layer to irradiate the chip's well region, avoiding excessive laser energy loss inside the chip, improving the accuracy of laser beam irradiation, and thus improving the accuracy of laser-simulated single-particle irradiation damage assessment tests. When testing chips with larger dimensions is required, smaller chip test areas can be removed, increasing the area of ​​the irradiation hole.

The invention provides a SiC UMOSFET super-junction four-terminal device capable of resisting a single-particle irradiation effect and a preparation method, and can be applied to the technical field of semiconductor devices. The device comprises a substrate; the drain electrode is arranged on the lower surface of the substrate; the N-type epitaxial layer is arranged on the upper surface of the substrate; the P column is arranged in the N-type epitaxial layer, and the thickness of the P column in the vertical direction does not exceed the thickness of the N-type epitaxial layer in the vertical direction; the P base region is close to one side of the upper surface of the N-type epitaxial layer and the upper surface of the P column; the source region is close to one side of the upper surface of the P base region; the gate trench is arranged on one side close to the upper surface of the N-type epitaxial layer; the P + injection region is arranged below the bottom of the gate trench; the N + injection region is arranged in the P + injection region; the control electrode is a control electrode groove formed in the N + injection region; the gate dielectric layer is arranged on the side wall of the gate groove; the gate is arranged on the upper surface of the gate dielectric layer; the interlayer dielectric is arranged on the upper surface of the grid electrode; and the source electrode is arranged on the upper surfaces of the interlayer dielectric and part of the source region.

The scheme belongs to the technical field of aerosol ionization, and discloses a light path structure for identifying and ionizing single-particle aerosol. The light path structure comprises a vacuum cavity, a laser light path, a scattered light detection light path and a fluorescence detection light path; the laser light path, the scattered light detection light path and the fluorescence detection light path intersect in the vacuum cavity to form an identification ionization area opposite to a sample inlet, wherein the continuous wave laser light path is provided with laser by a continuous wave laser capable of simultaneously emitting two beams of continuous wave laser with the same wavelength, and the continuous wave laser light path is configured as a straight path between the continuous wave laser and the identification ionization area, so that the continuous wave laser light path is greatly simplified, energy loss is reduced, and the spot energy density of particle irradiation is ensured. In addition, the use of the continuous wave laser makes the detection of the particle size of the aerosol particle only need one scattered light detection light path, and the coincidence of the pulse laser light path and the continuous wave laser light path also only need one dichroic mirror, which is beneficial to the miniaturization of the light path structure.

The application discloses a buried P+ SiC JBS structure with improved anti-single-particle performance, which comprises a cathode metal, an anode metal, an SiC N+ substrate, an N-type buffer layer, an N-epitaxial layer, a P+ buried layer and a JBS contact P+, the N-type buffer layer and the N-epitaxial layer are arranged above the SiC N+ substrate, the JBS contact P+ is connected above the N-epitaxial layer, wherein the JBS contact P+ is arranged between the cathode metal and the N-epitaxial layer, the N-type buffer layer is arranged between the N-epitaxial layer and the SiC N+ substrate, the cathode metal is arranged below the SiC N+ substrate, the anode metal is arranged above the JBS contact P+, and the P+ buried layer is arranged between the N-epitaxial layer and the JBS contact P+. The SiC JBS structure is improved, the original SiC JBS structure is ensured to have the advantages of low forward voltage drop and small reverse leakage current, meanwhile, the collection of holes to the anode metal and the collection of electrons to the cathode metal can be reduced during single-particle irradiation, and the excessive leakage and burning are prevented.

The invention relates to a single particle irradiation resistant reinforced AlGaN / GaN CAVET device with an extended source electrode and diversion InGaN, and belongs to the technical field of microelectronics. The device comprises a substrate; the drain electrode is positioned on the lower surface of the substrate; the buffer layer super junction N column is positioned on the upper surface of the substrate; the buffer layer super-junction P columns are located on the upper surface of the substrate and distributed on the two sides of the buffer layer super-junction N columns; the grid electrode is located on the surface of the buffer layer super-junction N column; the current blocking layers are located on the surfaces of the buffer layer super junction N column and the buffer layer super junction P column and distributed on the two sides of the grid electrode; the extending source electrodes are arranged in the current blocking layers on the two sides; the source electrodes are located on the surfaces of the current blocking layers on the two sides and make contact with the extending source electrodes; and the embedded InGaN layer is embedded in the current blocking layers on the two sides and is in contact with the source electrode. According to the invention, the extended source electrode and the embedded InGaN layer are designed to absorb carriers below and on the right side of the source electrode, so that single-particle burnout of the device can be avoided.

The application provides a kind of metal oxide semiconductor field effect transistor of anti single particle irradiation, when field effect transistor is in the state of cosmic ray or heavy ion incidence, due to the first conductive type polysilicon source region arranged in field effect transistor, when parasitic transistor opens, current gain is reduced, the carrier multiplication effect of device is reduced, to improve the anti single particle performance of device, again through the second conductive type polysilicon source region to form a hole flow channel, to exclude the hole generated in the oxide layer under the device when heavy ion incidence, so that the peak electric field inside the oxide layer is reduced.The application reduces the carrier multiplication effect of device, then improves the anti single particle irradiation performance through hole channel, so that the device has low oxide layer peak electric field and drain current, improves the anti single particle gate wear performance and burn performance of field effect transistor, to improve the anti single particle irradiation ability of device.

The invention belongs to the field of radiation medicine, and relates to molecular index screening of MDM2 genes for irradiation-induced liver injury in occupational areas. By carrying out experiments of alpha particle irradiation and alcohol-induced hepatocyte injury and screening differential genes of alpha particle accumulative irradiation and alcohol mixed factor induced hepatocyte injury by utilizing a multi-chip technology, a molecular marker MDM2 gene is provided for early warning of internal irradiation health monitoring molecular flow and target organ liver injury of occupational personnel. An MDM2 gene specific primer is used for amplifying a cDNA template of early damage of hepatocytes after occupational personnel to be detected are subjected to alpha particle internal irradiation, qRT-PCR fluorescent quantitative data analysis is carried out on 2-delta delta Ct results, and after the hepatocytes are subjected to radiation, alcohol and combined action of radiation and alcohol, the relative expression quantity of the MDM2 gene of the hepatocytes to be detected is obviously different. The early-stage radiation damage of the hepatocytes after the occupational personnel are subjected to internal irradiation is predicted.

A charged-particle irradiation unit and a diffractometer comprising such an irradiation unit, wherein the irradiation unit comprises a charged-particle source, a charged-particle-optical system, a sample holder and a manipulator operatively coupled to the sample holder for positioning a sample relative to the beam axis. The manipulator comprises a rotation stage for rotating the sample holder with respect to the incident beam around a substantially vertical rotation axis, a first translation stage configured to move the sample holder at least along a first sample axis and a second sample axis in a plane perpendicular to the rotation axis, and a second translation stage configured to move the rotation stage, the sample holder and the first translation stage at least along a first manipulator axis that is perpendicular to the beam axis and perpendicular to the vertical direction. The rotation stage is in a moving system of the second translation stage, the first translation stage is in a rotational system of the rotation stage, and the sample holder is in a moving system of the first translation stage. Thus, the manipulator can position the center of mass of the sample substantially on-axis with regard to the rotation axis and to compensate for different rotational positions of the rotation stage a respective measured or pre-determined native deviation of the rotation axis from a position of a nominal reference rotation axis of the rotation stage at least in a direction that is perpendicular to the beam axis and perpendicular to the vertical direction.

The present invention provides a GaN HEMT resistant to single particle irradiation. A stepped structure is arranged on the drain side of the p-GaN layer, which effectively alleviates the electric field aggregation near the drain side under the gate and suppresses the electric field spike, thereby improving the off-state blocking ability of the device under single particle irradiation. Etching holes are arranged on the stepped structure of the p-GaN layer, and metal is deposited to form an extraction electrode, which effectively extracts and discharges the excess holes induced by irradiation near the gate, avoiding electron injection caused by the accumulation of holes under the gate. The arrangement of the stepped structure and the extraction electrode can improve the single particle irradiation resistance of the device from the perspectives of weakening the electric field and extracting excess carriers respectively.

The application discloses a kind of terminal devices of superconducting tape irradiation, including particle irradiation vacuum chamber, unwinding vacuum chamber, winding vacuum chamber, and unwinding transmission device, winding transmission device, superconducting tape irradiation target system;The unwinding vacuum chamber, winding vacuum chamber are located in particle irradiation vacuum chamber both sides;Superconducting tape irradiation target system, including superconducting tape support body, water cooling system and back helium cooling system;Superconducting tape support body front end surface slightly with arc, through slightly with arc front end surface and superconducting tape closely adhere, take away the heat generated by superconducting tape irradiation;Back helium cooling system by filling in helium between superconducting tape and superconducting tape support body, increase convective heat transfer, realize the cooling of superconducting tape in the process of irradiation.The application solves the problem that the contact surface of tape and cooling body cannot be completely close when using protons or helium ions for superconducting tape irradiation, which leads to heat accumulation and thermal effect, and the tape may be annealed due to thermal effect.

The invention discloses a manufacturing method of a single particle radiation resistant power MOSFET, and belongs to the field of semiconductor devices. According to the method, helium ion implantation is carried out after contact hole corrosion and before metal deposition so as to introduce defects; helium ion implantation uses a masking layer etched by a contact hole and is self-aligned implantation; and after metal deposition and metal etching, annealing is carried out to stabilize the defects. The position of the defect is located in the body region, below the contact hole and the source region and outside the space charge region of the working voltage, so that the leakage current of the device is not increased. The helium ion injection defect has the advantages of high position precision, good temperature stability, no electric activity and no influence on the doping concentration. According to the invention, defects are introduced into the power MOSFET body, the service life of carriers is shortened, the recombination of excess carriers is enhanced, and the recovery current of single-particle irradiation is reduced, so that single-particle reinforcement is realized, and the method has the advantages of simple process flow, low device power consumption and high switching speed.

The application provides a kind of irradiation defect evolution fluence rate simulation method and system based on molecular dynamics, belongs to the technical field of simulation.The method comprises: obtaining the number of PKA generated by single incident particle irradiation semiconductor device;The semiconductor device is grid divided, the number of the initial PKA in each grid is obtained, and a simulation system model equal in size to the grid is established;Based on the simulation system model, the molecular dynamics method and the kinetic Monte Carlo method are used to simulate the defect evolution of the grid, and the defect information in the grid under the incident particle calibration fluence rate is obtained;The defect information in all the grids is summarized to obtain the comprehensive defect information of the semiconductor device.The application combines molecular dynamics and kinetic Monte Carlo method, realizes the simulation calculation of the defect evolution process of the whole semiconductor device under different fluence rates, and the calculation logic is clear, simple and easy to operate.

According to the GaN HEMT resistant to single-particle irradiation, the step-shaped structure is arranged on the side, close to the drain electrode, of the p-GaN layer, electric field gathering, close to the drain electrode side, below the grid electrode is effectively relieved, electric field peaks are restrained, and therefore the off-state blocking capacity of a device under single-particle irradiation is improved; etching holes are formed in the step-shaped structure of the p-GaN layer, metal is deposited to form an extraction electrode, excess holes induced by irradiation near the grid electrode are effectively extracted and discharged, and electron injection caused by accumulation of the holes below the grid electrode is avoided. The arrangement of the stepped structure and the extraction electrode can improve the single particle irradiation resistance of the device from the aspects of weakening an electric field and extracting excess carriers.

The invention relates to a prediction method and system for optical performance degradation of a multilayer film element under particle irradiation. The method comprises the following steps: firstly, acquiring thin film structure parameters and irradiation particle parameters of a to-be-predicted multilayer film element; irradiation simulation is carried out according to the film structure parameters and the irradiation particle parameters, and atomic-scale damage information is obtained; reconstructing a film layer structure of the multi-layer film after particle irradiation by using atomic-scale damage information; and finally, predicting the optical performance of the multilayer film degradation based on the reconstructed film layer structure. Compared with the prior art, the method can realize rapid and accurate pre-judgment of optical performance degradation of the multilayer film element under particle irradiation, and has the advantages of high precision, high efficiency and the like.