6 results about "Particle irradiation" patented technology

The application discloses a kind of Gauss light doping source junctionless type tunneling field effect transistor, comprising: source region, pocket area, channel region, drain region, polar grid, control grid, source, drain, first dielectric layer, second dielectric layer and third dielectric layer;Source region is connected with source and pocket area, and adopts Gauss light doping InAs material;Pocket area is connected with channel region, and is InAs / GaAsSb heterojunction structure;Channel region is connected with drain region;Drain region is connected with drain;First dielectric layer is located on the two sides of source region;Polar grid is located on the first dielectric layer;Second dielectric layer is located on the two sides of a part of channel region;Third dielectric layer is located on the two sides of another part of channel region;Control grid, including tunneling gate and auxiliary gate.The application further discloses a kind of Gauss light doping source junctionless type tunneling field effect transistor's single particle irradiation effect simulation optimization method, can provide more comprehensive simulation data, and device optimization effect is better.

This application discloses a memory single-event irradiation testing system and method based on multi-dimensional intelligent chart analysis. The system includes a lower-level data acquisition module and a higher-level multi-dimensional intelligent analysis platform. The lower-level data acquisition module writes reference data to the full address of the memory according to the test mode configured by the higher-level computer. During irradiation, it reads the full address data of the memory in real time and compares it with the reference data to capture single-event flip error addresses and error data. The error addresses, error data, real-time irradiation parameters, and test configuration parameters are packaged into raw data and sent to the higher-level computer. The higher-level multi-dimensional intelligent analysis platform is used to configure the test mode, memory operating parameters, and irradiation-related parameters, and generates multi-dimensional intelligent charts based on the raw data. This application provides accurate and reliable data support and visual decision-making basis for memory radiation resistance design optimization, sensitive bit protection strategy formulation, and reliability assessment.

This application provides a PCB substrate, comprising: a substrate body; an irradiation hole penetrating the substrate body; multiple chip test areas of different sizes nested within the substrate body, surrounding the irradiation hole; each chip test area including a die-attachment area and a gold finger area surrounding the die-attachment area; and a breakable structure disposed between adjacent chip test areas, the strength of which is less than the strength of the substrate body. In use, a test laser beam can directly irradiate the bottom of the chip through the irradiation hole, then penetrate the silicon layer to irradiate the chip's well region, avoiding excessive laser energy loss inside the chip, improving the accuracy of laser beam irradiation, and thus improving the accuracy of laser-simulated single-particle irradiation damage assessment tests. When testing chips with larger dimensions is required, smaller chip test areas can be removed, increasing the area of ​​the irradiation hole.

The application discloses a buried P+ SiC JBS structure with improved anti-single-particle performance, which comprises a cathode metal, an anode metal, an SiC N+ substrate, an N-type buffer layer, an N-epitaxial layer, a P+ buried layer and a JBS contact P+, the N-type buffer layer and the N-epitaxial layer are arranged above the SiC N+ substrate, the JBS contact P+ is connected above the N-epitaxial layer, wherein the JBS contact P+ is arranged between the cathode metal and the N-epitaxial layer, the N-type buffer layer is arranged between the N-epitaxial layer and the SiC N+ substrate, the cathode metal is arranged below the SiC N+ substrate, the anode metal is arranged above the JBS contact P+, and the P+ buried layer is arranged between the N-epitaxial layer and the JBS contact P+. The SiC JBS structure is improved, the original SiC JBS structure is ensured to have the advantages of low forward voltage drop and small reverse leakage current, meanwhile, the collection of holes to the anode metal and the collection of electrons to the cathode metal can be reduced during single-particle irradiation, and the excessive leakage and burning are prevented.

The application discloses a kind of terminal devices of superconducting tape irradiation, including particle irradiation vacuum chamber, unwinding vacuum chamber, winding vacuum chamber, and unwinding transmission device, winding transmission device, superconducting tape irradiation target system;The unwinding vacuum chamber, winding vacuum chamber are located in particle irradiation vacuum chamber both sides;Superconducting tape irradiation target system, including superconducting tape support body, water cooling system and back helium cooling system;Superconducting tape support body front end surface slightly with arc, through slightly with arc front end surface and superconducting tape closely adhere, take away the heat generated by superconducting tape irradiation;Back helium cooling system by filling in helium between superconducting tape and superconducting tape support body, increase convective heat transfer, realize the cooling of superconducting tape in the process of irradiation.The application solves the problem that the contact surface of tape and cooling body cannot be completely close when using protons or helium ions for superconducting tape irradiation, which leads to heat accumulation and thermal effect, and the tape may be annealed due to thermal effect.

This application relates to the field of post-processing technology for single-crystal or polycrystalline materials using particle irradiation, and particularly to an irradiation apparatus and method suitable for silicon-based materials. The irradiation apparatus may include: an irradiation container, an irradiation simulator, a feed assembly, and an discharge assembly. The irradiation container is used to load the silicon-based material and, after entering the irradiation channel, is capable of rotating about the axis of the irradiation channel and translating along its axial direction. The irradiation simulator is used to simulate the irradiation container and is arranged in a position within the irradiation channel not occupied by the irradiation container, providing reactivity equivalent to that of the irradiation container to the reactor. The feed assembly is configured to push the irradiation container or irradiation simulator from the entrance of the irradiation channel into the irradiation channel, thereby causing adjacent irradiation simulators or irradiation containers to rotate about the axis of the irradiation channel and translate towards the exit of the irradiation channel. Embodiments of this application can improve the irradiation efficiency of silicon-based materials while ensuring irradiation uniformity.