115 results about "Particle irradiation" patented technology

The invention discloses a DICE structure latch unit resisting single-particle irradiation effect, which is used for solving the technical problem of large dynamic power consumption of the conventional DICE structure latch unit. The DICE structure latch unit comprises a P-channel metal oxide semiconductor (PMOS) transistor P0, a PMOS transistor P1, a PMOS transistor P2, a PMOS transistor P3, an N-channel metal oxide semiconductor (NMOS) transistor N0, an NMOS transistor N1, an NMOS transistor N2, and an NMOS transistor N3, and also comprises an NMOS transistor MN0, an NMOS transistor MN1, an NMOS transistor MN2, an NMOS transistor MN3, a PMOS transistor MP0, a PMOS transistor MP1, a PMOS transistor MP2, and a PMOS transistor MP3. The NMOS transistor MN0, the NMOS transistor MN1, the NMOS transistor MN2 and the NMOS transistor MN3 and the PMOS transistor P0, the PMOS transistor P1, the PMOS transistor P2 and the PMOS transistor P3 are complementary. The PMOS transistor MP0, the PMOS transistor MP1, the PMOS transistor MP2 and the PMOS transistor MP3 and the NMOS transistor N0, the NMOS transistor N1, the NMOS transistor N2 and the NMOS transistor N3 are complementary. Due to adoption of the method of MOS transistor insertion complementation, direct impact between adjacent nodes is prevented, and the probability that the PMOS transistors and NMOS transistors of each branch are conducted simultaneously is lowered. The expected effect that overturn of any one of four storage nodes does not cause overturn of the other three is achieved, so that the dynamic power consumption of the DICE structure latch unit is reduced.