114 results about "Particle irradiation" patented technology

The invention provides an SRAM type FPGA single particle irradiation test system and method. The test system comprises a host computer, a current monitoring acquisition plate and a test plate. The current monitoring acquisition plate comprises a current monitoring acquisition FPGA, a current acquisition unit, a power supply module and a first communication interface; the test plate comprises a control processing FPGA, a refreshing chip, an SRAM, a configuration PROM, a storage PROM, a second communication interface and a detected FPGA; the host computer is in charge of flow control and data processing; the current monitoring acquisition plate is in charge of power-on and power-off of the test plate and monitoring and testing of FPGA currents; and the test plate is in charge of processing a command sent by the host computer and performing work such as single particle overturning, single particle function interruption detection and the like. According to the invention, the refreshing chip is utilized to replace some of the reconfiguration modules in a conventional irradiation test system so that a detected chip can be more conveniently and reliably refreshed; and the system and method provided by the invention can realize static and dynamic overturning testing on a trigger, and more reliable trigger overturning data can be obtained by combing the two methods.

A particle irradiation apparatus and a particle beam irradiation method that controls the energy and irradiation dose of a particle beam to form a high dose region having a high uniformity of depth-directional spread (Spread Out Bracici Peak, referred to as SOBP). A SOBP having a steep falling edge of the dose distribution on the deep side from the body surface is formed based on a method of superimposing SOBPs each having a small dose distribution width to form a desired SOBP. An energy-spread-device forms a first SOBP having a small dose distribution width; and an energy spread device 2 forms a second SOBP having a small dose distribution width and a steep falling edge of the dose distribution at the deepest portion from the body surface. The thus formed SOBPs are superimposed to form a SOBP having a length suitable for the target region.

The invention relates to a single-particle irradiation experiment test system and method based on a JTAG (joint test action group) interface. The test system comprises an upper computer and a test board, wherein the test board comprises an SRAM (static random access memory), a configuration PROM (programmable read-only memory), a control processing FPGA (field programmable gate array) and a tested FPGA, the control processing FPGA comprises a serial port communication module, a process control module, a tested FPGA configuration module, a JTAG read-back module and an SRAM read-write module, simple functions are loaded on the tested FPGA, the upper computer is in charge of flow process control and data processing, and the control processing FPGA is in charge of processing commands sent by the upper computer and carrying out work such as single-particle turning and single-particle function interruption detection. The system and the method have the advantages that the control processing FPGA is connected with the JTAG interface of the tested FPGA, the single-particle turning detection is realized through the JTAG interface, the system is more stable, the result is more reliable, in addition, the device model of the tested FPGA can be automatically recognized, and the effect of self adaptation to the single-particle irradiation experiment test of the tested FPGAs in different models is achieved.

The invention provides a single event upset characteristic testing method for partially triple modular redundancy reinforced SRAM (static random access memory) type FPGA (field programmable gate array). The method comprises the following steps: irradiating a tested device at a set fluence rate, recording a single event error for once when the output characteristic of the device is not correct and the functions of the device do not return to normal within time T1 after the particle irradiation stops, and repeating the above steps for multiple times and then calculating a single even error section; reducing the particle fluence rate continuously till the single even error section becomes stable; and repeating the above steps under at least five different LET values in total.

The invention provides a particle irradiation device and a particle treatment system. The particle radiation device is used for irradiating particle beam in a tumor zone. The particle radiation device comprises a treatment head and an irradiation control system. The treatment head comprises a bellows, a first scanning magnet, a second scanning magnet, a second vacuum box, a beam spot size regulation device, and a vacuum window beam monitoring module; the downstream of the beam monitoring module is provided with a movably connected ridge-shaped filter, a gunshot compensator and a collimator; the ridge-shaped filter is provided with a fixing device, a main body and a position regulation device which is connected to an irradiation control system in order to drive the main body to move along the changing direction of the height and the thickness in the irradiation implementation; the irradiation control systems controls the first scanning magnet and the second scanning magnet to deflect the particle beam to the position corresponding to the tumor target zone, and controls the beam monitoring module to monitor the dosage of the particle beam and the position information. The invention allows the doctor to perform either two-dimension irradiation therapy or three-dimension irradiation therapy on one device according to the clinical requirement.

The invention discloses a DICE structure latch unit resisting single-particle irradiation effect, which is used for solving the technical problem of large dynamic power consumption of the conventional DICE structure latch unit. The DICE structure latch unit comprises a P-channel metal oxide semiconductor (PMOS) transistor P0, a PMOS transistor P1, a PMOS transistor P2, a PMOS transistor P3, an N-channel metal oxide semiconductor (NMOS) transistor N0, an NMOS transistor N1, an NMOS transistor N2, and an NMOS transistor N3, and also comprises an NMOS transistor MN0, an NMOS transistor MN1, an NMOS transistor MN2, an NMOS transistor MN3, a PMOS transistor MP0, a PMOS transistor MP1, a PMOS transistor MP2, and a PMOS transistor MP3. The NMOS transistor MN0, the NMOS transistor MN1, the NMOS transistor MN2 and the NMOS transistor MN3 and the PMOS transistor P0, the PMOS transistor P1, the PMOS transistor P2 and the PMOS transistor P3 are complementary. The PMOS transistor MP0, the PMOS transistor MP1, the PMOS transistor MP2 and the PMOS transistor MP3 and the NMOS transistor N0, the NMOS transistor N1, the NMOS transistor N2 and the NMOS transistor N3 are complementary. Due to adoption of the method of MOS transistor insertion complementation, direct impact between adjacent nodes is prevented, and the probability that the PMOS transistors and NMOS transistors of each branch are conducted simultaneously is lowered. The expected effect that overturn of any one of four storage nodes does not cause overturn of the other three is achieved, so that the dynamic power consumption of the DICE structure latch unit is reduced.

The invention discloses an anti-single particle irradiating method and an anti-single particle irradiating system based on frame data processing, which mainly solves the problem of function error caused by single-particle irradiation of a traditional frame data processing system. The anti-single particle irradiating system comprises a single frame detecting and restoring module and a frame data processor. The single frame detecting and restoring module is used for restoring the frame data processor. The frame data processor comprises a finite state machine collection unit, a controller protecting and correcting unit, a memory, a memory protecting and correcting unit, a data input interface, a data output interface and a configuration module, wherein the finite state machine collection unit is used for processing various frame data; the controller protecting and correcting unit is used for protecting the finite state machine collection unit; the memory protecting and correcting unit isused for protecting memory data; and the configuration module is used for storing parameter information required by the frame data processor. The invention has the advantages of simple realization, anti-single particle irradiation and the like, and can be used for image compression systems and other correcting and modulating circuits based on frames or groups in space environments.

The invention provides a method and system for detection and fault positioning of a SoC chip through laser simulation single particle irradiation. The method comprises the following steps of (1) performing hollowed-out processing on a test area of a to-be-tested chip; (2) if dynamic testing is carried out, selecting a function testing program of a certain module, starting function testing, and outputting a testing result; (3) if static testing is carried out, bypassing a PLL clock, stopping clock signal input, and detecting a circuit state through the current change; and (4) if reset state testing is carried out, connecting a reset pin to the ground, enabling the SOC chip to be continuously in a reset state through a reset circuit, and detecting the circuit state by observing the current change and a phase-locked loop frequency waveform. According to the method and system, the influence of larger laser spots on a non-test area is avoided, and the comprehensiveness and the accuracy of SOC chip testing are improved.

The invention relates to a particle irradiation device, which comprises particle beams transmitted along a central axis, a collimator and a planarization unit. The particle beams are composed of a second particle beam and a third particle beam. The collimator is arranged on the transmission path of the third particle beam. The third particle beam passes through the collimator to be in the two-dimensional distribution that is strictly the same as the shape of a physical field size corresponding to a gross tumor volume. The planarization unit is arranged on the transmission path of the second particle beam and is provided with a rotatable shielding part that can rotate around the central axis. The second particle beam is planarized by the shielding part to form the third particle beam. The invention also provides a particle therapy system comprising the above particle irradiation device. Based on the planarization unit, the uniform distribution of a dosage is realized. Only by means of the simple shielding part, the desired particle irradiation device and the particle therapy system comprising the above particle irradiation device can be obtained. Therefore, the reliability of the particle irradiation device and the reliability of the particle therapy system are improved. Meanwhile, the cost is lowered.

The invention provides a method for testing influence of space charged particle irradiation on a molecular contamination effect, wherein the method comprises a space charged particle irradiation test method, a space molecular contamination effect test method, a space charged particle irradiation effect calculation method, and a space molecular contamination effect evaluation method. The method for testing influence of space charged particle irradiation on the molecular contamination effect relates to the following materials: an epoxy binder for a satellite, a white thermal control coating for a satellite, and a J-1 transparent glass sheet. According to the method for testing influence of space charged particle irradiation on the molecular contamination effect, irradiation particles are only deposed in a contamination film without influence on a substrate material for bearing the contamination film, and the influence on the molecular contamination effect caused by the space charged particle irradiation to the contamination film can be accurately determined.

The invention discloses an anti-single-particle irradiation reinforcement circuit of a CMOS (Complementary Metal-Oxide-Semiconductor) integrated circuit, which comprises a logic gating circuit (100) which is subjected to SEU (single event upset) easily and a redundancy logic gating circuit (101), wherein the logic gating circuit (100) and the redundancy logic gating circuit (101) share one input end, a first diode (102) and a second diode (103) are connected between the output end of the logic gating circuit (100) and the output end of the redundancy logic gating circuit (101), and the conducting directions of the first diode (102) and the second diode (103) are opposite. The anti-single-particle irradiation reinforcement circuit of the CMOS integrated circuit conducts anti- irradiation reinforcement on the sensitive logic gating circuit in the CMOS integrated circuit, strikes an average between the area and speed of the integrated circuit, and obviously improves the anti-SEU level of the CMOS integrated circuit.

The sterilizing effect of particle irradiation on microorganisms for the sterilizing treatment thereof can be evaluated. The evaluation can be done by supplying microorganisms in the space inside a container (8), allowing particles (7) for the sterilizing treatment of microorganisms to irradiate the microorganisms, sampling the microorganisms by a sampling means (6) after the irradiation of the particles (7) and measuring the sampled microorganisms. The microorganisms as the subject for the sterilizing treatment can be a combination of one or more members selected from the group consisting of bacteria, mycete, viruses and allergens. As the particles, for example, positive ions, negative ions, and gases of positive ions and negative ions in mixture, charged particles such as α rays and β rays, various plasma gas particles, particles such as ozone and radical particles, and particles of chemical agent can be used.

The invention relates to a single event effect detecting device of an image sensor. The detecting device comprises an image processing module, a power source, a programmable power source and a test circuit board. The test circuit board is provided with an electronic imaging system and a sensor of an image to be tested. The image processing module can recognize white spots produced by bombardment of particles and count the number of the white spots and the size of occupied pixels, the transient effect on the pixels of the image sensor from single particles produced by the bombardment of the particles can be analyzed conveniently, and the single event effect sensibility of the image sensor can be effectively detected and evaluated. According to the single event effect detecting device, the single event effect produced in the particle irradiation process can be effectively and comprehensively detected, and the single event effect resisting performance index of a device can be effectively checked.

A single particle radiation-resistant super junction VDMOS device belongs to the technical field of power semiconductor devices. According to the invention, in a super junction structure of a traditional super junction VDMOS device, a silicon dioxide dielectric layer (12) is introduced under a second conductive-type doped semiconductor column area (4). Compared with the traditional super junction VDMOS structure, through introducing the silicon dioxide dielectric layer (12), the amount of hole-electron pair generated by the super junction VDMOS device is greatly reduced when the super junction VDMOS device is irradiated by the single particle; the recombination rate is accelerated; a parasitic bipolar transistor can be prevented from avalanche injection-type secondary breakdown; the irradiation resistance ability of the super junction VDMOS device is improved; and the application field thereof is widened.

The invention discloses a testing method for single event functional interruption of a Spacewire circuit, which comprises the following steps that firstly two test systems are established respectively using an SPARC V8 processor and the Spacewire circuit, and the two test systems establish data transmission channels by each Spacewire circuit; then the Spacewire circuit B is arranged in a particle irradiation environment; the data transmission channels are set as that the test system A sends data to the test system B; after receiving the data, the test system B forwards the received data to the test system A again; and after data transmission is started, if the test system A cannot send the data to the test system B or the test system A cannot acquire the forwarded data from the test system B, the single event functional interruption occurs on the Spacewire circuit B, and then a reason for functional interruption is analyzed according to the read-back data of a control register of the Spacewire circuit B. The method can provide the basis for correlation research of a single event effect and a microelectronic device.

The invention relates to a large-field-depth large-view-field wide-temperature-variance high-image-quality optical system. A first negative lens, a second negative lens, a first positive lens, a third negative lens, a diaphragm, a second positive lens, a third positive lens, a fourth positive lens and a fourth negative lens which are successively arranged on an optical path. The large-field-depth large-view-field wide-temperature-variance high-image-quality optical system provided by the invention facilitates correction of field curvature, effectively resists complex particle irradiation in space, prevents degumming in a complex space environment and is applied to space environment.

The invention discloses a system for testing a single particle irradiation performance of a programmable logic device and relates to the technology for integrated circuit testing. The system comprises a host computer, a vacuum reservoir, a particle source, at least one separation walls, at least one measuring devices and a power source. A circuit board to be tested comprises a main controller, a programmable logic device to be tested and a selectable nonvolatile memory or a random access memory. Controlling software is installed in the host computer. The system for testing the single particle irradiation performance of the programmable logic device is capable of realizing automatic operation for the process for the single particle irradiation performance test and reducing workload of test operators, is adaptive to the programmable logic devices to be tested in various different specifications, and universal.

Provided is a film formation apparatus with which an anti-fouling film having high usability and antiwear performance may be formed efficiently. According to a film formation apparatus (1) of the present invention, a substrate holder (12) which comprises a basal body holding surface for folding a plurality of substrates (14) is disposed in a vacuum container (10) in a rotatable manner. The film formation apparatus (1) comprises an evaporation source (34) which is disposed in the vacuum container (10) in such a manner that a larger amount of film formation material may be supplied to a first area (A3) that is part of the basal body holding surface than to an area other than the first area (remaining area) when operated toward the substrate holder (12) in a rotation stop state; and an ion source (38) which is disposed in the vacuum container (10) in such a manner, arrangement, and/or direction that energetic particle irradiation may be made toward only a second area (A2) that is part of the basal body holding surface when operated toward the substrate holder (12) in the rotation stop state.

The present invention provides an analysis method for safety boundary performance degradation of single-particle irradiated silicon carbide power MOSFETs, and relates to a method for determining the safety boundary performance of a silicon carbide power device, in order to solve the problem that the safety boundary of single-particle irradiation of the SiC type power device cannot be accurately obtained at present. The technical scheme provided by the present invention is characterized in that: a ground single-particle irradiation silicon carbide power device is used to obtain test data of a single-particle burnout or gate-through effect of the device; and each pair of test data values are drawn in a reverse bias voltage and electrical parameter performance numerical coordinate system, thepoints corresponding to the minimum reverse bias voltage and the electrical parameter value when the single-particle burnout or the gate-through effect occurs are marked, and the points correspondingto the maximum reverse bias voltage and the electrical parameter value when the single-particle burnout or the gate-through effect does not occurs are marked, so as to determine the charge collectionregion, the electrical parameter value increase region, and the device breakdown burned region. The technical scheme provided by the present invention is used for determining the safety boundary performance of a silicon carbide power device.

The invention provides a single-particle irradiation experiment testing apparatus, system and method. The testing apparatus comprises a test motherboard and a test daughter board connected with the test motherboard. The test daughter board and a tested device correspond to each other. The test motherboard is used for receiving control data sent by an external remote operation computer, controlling the test daughter board to test the tested device based on the control data, feeding back the current test data to the external remote operation computer. The apparatus, system and method can be applied to irradiation experiment processes of different types of tested devices.

The invention provides a charged particle irradiation apparatus including: a focusing magnet that deflects a charged particle beam to continuously change an irradiation angle of the beam to an isocenter; an irradiation nozzle that continuously moves along a shape on an exit side of an effective magnetic field region of the focusing magnet, wherein the beam exiting the focusing magnet is emitted to the isocenter through the irradiation nozzle; a power supply rail along the shape on the exit side of the region; and a collector shoe fixed to the irradiation nozzle and configured to slide along the rail to supply power from the rail to the irradiation nozzle. A surface of the collector shoe contacted with the rail has the same bend radius as or average bend radius of the rail, and/or the collector shoe slides along the rail in contact with a flat side surface of the rail.

The invention provides a smooth-switching double-machine redundant power distribution system resistant to single-particle irradiation. The system comprises a main machine, a standby machine and a loadpower supply and distribution module, wherein the main machine and the standby machine serve as an on-duty machine and a non-on-duty machine alternately; the on-duty machine and the non-on-duty machine send respective health states and current working states to the opposite in real time to ensure that the non-on-duty machine and the on-duty machine are informed of the current working state of theopposite; the on-duty machine outputs a power distribution control signal to the load power supply and distribution module according to a preset time sequence or a received power distribution instruction input externally to control on/off of the load power supply and distribution module, a busbar voltage at the output end of the load power supply and distribution module is back-collected, and whether the power distribution instruction is executed correctly or not is judged according to the back-collection result; and when the instruction is not executed correctly, the on-duty machine sends the power distribution instruction to the non-on-duty machine through an internal serial port, an output control function of the non-on-duty machine is started temporarily, and the non-on-duty machine supplementarily executes the power distribution instruction once.