Disclosed is an SRAM type FPGA single event upset effect simulation method. The method includes the steps that firstly, design and process parameters of a device to be simulated are acquired; secondly, a three-dimensional geometrical shape of the device is constructed through a modeling tool, and doped areas, doping concentration, discretization strategies and the like of the device are set; thirdly, the design and process parameters of the device are calibrated according to an I-V characteristic curve of the device; fourthly, a meshed device structure is generated, and the mesh is refined on a channel, the light doped area and a PN junction border; fifthly, a device-level TCAD simulation method or a device-level TCAD and circuit-level Spice hybrid simulation method is selected according to the circuit scale and practical conditions of the device; sixthly, characteristics of incident heavy ions are acquired by using a radiating particle characteristic tool to conduct calculation; seventhly, physical model parameters, simulation time, boundary conditions and the like are set, and single event effect simulation of the device is carried out through a TCAD tool; eighthly, particles different in energy are selected to be simulated again according to simulation results; ninthly, the simulation results are acquired through a simulation data analysis tool.