Method for error correcting and detecting for memory anti-single particle overturn

An anti-single event and memory technology, which is applied in the field of error correction and error detection of memory, can solve the problems of inaccurate identification of error types, affecting the accuracy of error correction and detection results, and uncorrectable multi-bit errors, etc., to improve anti-single event The ability to flip, reduce the cost of reinforcement, and the effect of short delay

Inactive Publication Date: 2008-10-08
BEIJING MXTRONICS CORP +1
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AI Technical Summary

Problems solved by technology

Since the same information data and check data will be used again in the memory, if the check data error is not corrected in time, under the influence of space radiation, it may cause uncorrectable multi-bit errors and read the data again Wrong syndrome may be generated when the error is detected, so that the error type cannot be accurately identified, resulting in a wrong judgment, thereby affecting the accuracy of the error correction result

Method used

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  • Method for error correcting and detecting for memory anti-single particle overturn
  • Method for error correcting and detecting for memory anti-single particle overturn
  • Method for error correcting and detecting for memory anti-single particle overturn

Examples

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Embodiment

[0037] In this example, 8-bit data is encoded for error correction and error detection. If it is necessary to simultaneously perform error correction and error detection for 16-bit and 32-bit data, two or four parallel encoding and decoding modules can be used to implement it.

[0038] When the EDAC circuit receives the CPU write signal, write data M=[0 0 0 1 0 1 0 0], use the following form of generator matrix G to encode it (select linear block code), and generate check data A= [0 1 1 0 1 0 0 1],

[0039] G = 0 1 1 0 1 0 1 0 0 0 1 ...

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Abstract

The invention provides an anti-single-event-upset error checking and correction method for memory, which comprises: (1) receiving K-bit information data from CPU; (2) generating N-bit check data A corresponding to the K-bit information data; (3) storing the K-bit information data and the N-bit check data A to a memory; (4) reading the K-bit information data from the memory and regenerating a N-bit check data B corresponding to the K-bit information data; (5) performing XOR operation on the check data A and the check data B to obtain a corrector; and (6) locating error in the information data and the check data A by the corrector. If one or two bits of data error occurs, the data error is corrected and correct data is outputted; if two bits or testable more than three bits of data error occurs, the information that non-correctable error occurs is prompted. The method has strong error correction ability, simple operation, and one-bit or two-bit error of memory caused by single event effect is effectively corrected.

Description

technical field [0001] The invention relates to an error correction and error detection method for a memory, in particular to a double error correction and multiple error detection method for the memory to resist single-event reversal. Background technique [0002] In various microprocessors, various storage units (data memory, program memory, registers, flip-flops) occupy 30%-70% of the chip area, and are the most sensitive part of the chip to transient interference. The on-board microprocessor is affected by space radiation, and the storage unit will have a single event upset (single effectupset) problem, which will cause program errors. If the SEU problem cannot be resolved in time, it may cause the microprocessor to work abnormally. EDAC (Error Detection And Correction) technology can effectively solve the SEU problem without depending on the process. With the continuous development of electronic technology and the deepening of people's understanding of SEU (Single Effe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10
Inventor 郝丽于立新苏天红彭和平
Owner BEIJING MXTRONICS CORP
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