Method for reading a
flash memory device (2), comprising: Storing (103) configuration files (21) of a plurality of neural classification network (CNN) models for a reliability state, configuration files (22) of a plurality of neural regression network (RNN)
inference models, and a plurality of sets of reliability state tags (23), wherein each set of reliability state tags (23) is associated with one of a plurality of reliability states, and each of the reliability state CNN models is associated with a range of
programming and erasing (P / E) cycles; Monitoring (104) the operation of the flash storage device (2) to identify a current number of P / E cycles of the flash storage device (2); Select (105) one of the reliability state CNN models that are assigned a range of P / E cycles corresponding to the current number of P / E cycles; Performing (106) an operation of a neural network of the selected reliability state CNN model to identify a predicted reliability state; Identifying (107) the set of reliability state tags (23) that are associated with the predicted reliability state; Selecting (108) one of the many RNN
inference models that corresponds to the predicted reliability state; Performing (109) an operation of a neural network of the selected RNN
inference model, which is used as input of the identified reliability state tags (23) to generate output values that specify the shape of a
threshold voltage shift read error curve (TVS-RE curve); Identifying (110) a
threshold voltage displacement offset value (TVSO value) near a minimum value of the TVS-RE curve; Repeating (111) the selection of one of the RNN models, performing the operation of a neural network of the selected RNN inference model, and identifying TVSO values for all
threshold voltage regions required to read the
flash memory device (2); and Performing (112) a read operation of the
flash memory device (2) using a threshold
voltage shift read operation at the identified TVSO values.