16847 results about "Flash memory" patented technology

A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.

A system and method for adaptive RAID geometries. A computer system comprises client computers and data storage arrays coupled to one another via a network. A data storage array utilizes solid-state drives and Flash memory cells for data storage. A storage controller within a data storage array is configured to determine a first RAID layout for use in storing data, and write a first RAID stripe to the device group according to the first RAID layout. In response to detecting a first condition, the controller is configured to determine a second RAID layout which is different from the first RAID layout, and write a second RAID stripe to the device group according to the second layout, whereby the device group concurrently stores data according to both the first RAID layout and the second RAID layout.

A compact personal token apparatus, suitably resembling a conventional USB memory fob in size, shape, and form which can be plugged into a PC and interfaced with the virtual world of the Internet. The apparatus is capable of loading and storing information from the Internet, via the PC to its flash memory or EEPROM and then using the stored information or value via its wireless interface in the real world. The apparatus is capable of implementing an auto-run application, when inserted into a personal computer. The apparatus is capable of exchanging information with other devices having compatible interfaces. The apparatus can also function as a firewall when plugged between an Internet connection and a PC.

In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The sometimes conflicting needs to maintain data integrity and system performance are balanced by deferring execution of some of the corrective action when the memory system has other high priority operations to perform. In a memory system utilizing very large units of erase, the corrective process is executed in a manner that is consistent with efficiently rewriting an amount of data much less than the capacity of a unit of erase.

The present invention presents a hybrid non-volatile system that uses non-volatile memories based on two or more different non-volatile memory technologies in order to exploit the relative advantages of each these technology with respect to the others. In an exemplary embodiment, the memory system includes a controller and a flash memory, where the controller has a non-volatile RAM based on an alternate technology such as FeRAM. The flash memory is used for the storage of user data and the non-volatile RAM in the controller is used for system control data used by the control to manage the storage of host data in the flash memory. The use of an alternate non-volatile memory technology in the controller allows for a non-volatile copy of the most recent control data to be accessed more quickly as it can be updated on a bit by bit basis. In another exemplary embodiment, the alternate non-volatile memory is used as a cache where data can safely be staged prior to its being written to the to the memory or read back to the host.

A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare / swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

The present invention discloses a flash memory storage system, comprising at least one RAID controller; a plurality of flash memory cards electrically connected with the RAID controller; and a cache memory electrically connected with the RAID controller and shared by the RAID controller and the flash memory cards. The cache memory efficiently enhances the system performance. The storage system may comprise more RAID controllers to construct a nested RAID architecture.

A DRAM-like non-volatile memory array includes a cell array of non-volatile cell units with a DRAM-like cross-coupled latch-type sense amplifier. Each non-volatile cell unit has two non-volatile cell devices with respective bit lines and source lines running in parallel and laid out perpendicular to the word line associated with the non-volatile cell unit. The two non-volatile cell devices are programmed with erased and programmed threshold voltages as a pair for storing a single bit of binary data. The two bit lines of each non-volatile cell unit are coupled through a Y-decoder and a latch device to the two respective inputs of the latch-type sense amplifier which provides a large sensing margin for the cell array to operate properly even with a narrowed threshold voltage gap. Each non-volatile cell device may be a 2 T FLOTOX-based EEPROM cell, a 2 T flash cell, 11 T flash cell or a 1.5 T split-gate flash cell.

A solid state non-volatile memory unit includes, in part, an encoder, a multi-level solid state non-volatile memory array adapted to store data encoded by the encoder, and a decoder adapted to decode the data retrieved from the memory array. The memory array may be a flash EEPROM array. The memory unit optionally includes a modulator and a demodulator. The data modulated by the modulator is stored in the memory array. The demodulator demodulates the modulated data retrieved from the memory array.

Methods, devices and computer readable code for reading data from one or more flash memory cells, and for recovering from read errors are disclosed. In some embodiments, in the event of an error correction failure by an error detection and correction module, the flash memory cells are re-read at least once using one or more modified reference voltages, for example, until a successful error correction may be carried out. In some embodiments, after successful error correction a subsequent read request is handled without re-writing data (for example, reliable values of the read data) to the flash memory cells in the interim. In some embodiments, reference voltages associated with a reading where errors are corrected may be stored in memory, and retrieved when responding to a subsequent read request. In some embodiments, the modified reference voltages are predetermined reference voltages. Alternatively or additionally, these modified reference voltages may be determined as needed, for example, using randomly generated values or in accordance with information provided by the error detection and correction module. Methods, devices and computer readable code for reading data for situations where there is no error correction failure are also provided.

A system and integrated circuit chips used in the system utilize a bus in the form of a ring to interconnect nodes of individual components for transfer of data and commands therebetween. An example system described is a memory having one or more re-programmable non-volatile memory cell arrays connected to each other and to a system controller by a ring bus.

Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.

Methods and circuits for page based management of an array of Flash RAM nonvolatile memory devices provide paged base reading and writing and block erasure of a flash storage system. The memory management system includes a management processor, a page buffer, and a logical-to-physical translation table. The management processor is in communication with an array of nonvolatile memory devices within the flash storage system to provide control signals for the programming of selected pages, erasing selected blocks, and reading selected pages of the array of nonvolatile memory devices.

A fast low voltage ballistic program, ultra-short channel, ultra-high density, dual-bit multi-level flash memory is described with a two or three polysilicon split gate side wall process. The structure and operation of this invention is enabled by a twin MONOS cell structure having an ultra-short control gate channel of less than 40nm, with ballistic injection which provides high electron injection efficiency and very fast program at low program voltages of 3~5V. The cell structure is realized by (i) placing side wall control gates over a composite of Oxide-Nitride-Oxide (ONO) on both sides of the word gate, and (ii) forming the control gates and bit diffusion by self-alignment and sharing the control gates and bit diffusions between memory cells for high density. Key elements used in this process are: 1) Disposable side wall process to fabricate the ultra short channel and the side wall control gate with or without a step structure, and 2) Self-aligned definition of the control gate over the storage nitride and the bit line diffusion, which also runs in the same direction as the control gate. The features of fast program, low voltage, ultra-high density, dual-bit, multi-level MONOS NVRAM of the present invention include: 1) Electron memory storage in nitride regions within an ONO layer underlying the control gates, 2) high density dual-bit cell in which there are two nitride memory storage elements per cell, 3) high density dual-bit cell can store multi-levels in each of the nitride regions, 4) low current program controlled by the word gate and control gate, 5) fast, low voltage program by ballistic injection utilizing the controllable ultra-short channel MONOS, and 6) side wall control poly gates to program and read multi-levels while masking out memory storage state effects of the unselected adjacent nitride regions and memory cells. The ballistic MONOS memory cell is arranged in the following array: each memory cell contains two nitride regions for one word gate, and ½ a source diffusion and ½ a bit diffusion. Control gates can be defined separately or shared together over the same diffusion. Diffusions are shared between cells and run in parallel to the side wall control gates, and perpendicular to the word line.

A source block (B0) and the logical page number (“8”) of a write target page are identified from the logical address of the write target page. Data objects (DN8, DN9, . . . , DN12) to be written, which a host stores in a page buffer (2), are written into the data areas (DA) of the pages (Q0, Q1, . . . , Q4) of a destination block (Bn), starting from the top page (Q0) in sequence. The logical page number (“8”) of the write target page is written into the redundant area (RA) of the top page (Q0). The physical page number (“6=8−2”) of the write target page is identified, based on the logical page number (“8”) of the write target page and the page offset (“2”) of the source block (B0). When notified by the host of the end of the sending of the data objects (DN8, . . . , DN12), the data items (D13, . . . , D31, D0, D1, . . . , D7) in the source block (B0) are transferred to the pages (Q5, Q6, . . . , Q31) in the destination block (Bn) via the page buffer (2) sequentially and cyclically, starting from the page (P11) situated cyclically behind the write target page (P6) by the number (“5”) of pages of the data objects (DN8, . . . , DN12).

A non-volatile memory data storage system, comprising: a host interface for communicating with an external host; a main storage including a first plurality of flash memory devices, wherein each memory device includes a second plurality of memory blocks, and a third plurality of first stage controllers coupled to the first plurality of flash memory devices; and a second stage controller coupled to the host interface and the third plurality of first stage controller through an internal interface, the second stage controller being configured to perform RAID operation for data recovery according to at least one parity.

Methods and apparatus of the present invention include multiple flash storage devices that are configured to form a single storage device that is flexible and scalable. Reliability and performance are improved while keeping the power consumption benefits compared to conventional hard disk drives.

A computer apparatus such as a mouse, keyboard, or PC headset with additional devices disposed within the apparatus enclosure, which can enhance the functionality of such computer apparatus. In the preferred embodiment, the additional devices are disposed within or along the length of a mouse apparatus. The additional devices typically function independently of the mouse apparatus. However, the additional components may share one or more wired or wireless paths to a host PC and to other devices, or to a network. The additional devices either integrated within the mouse enclosure or removable from the mouse enclosure, include a wireless adapter (Wi-Fi, Bluetooth, 3G, GSM, etc. . . . ), RAM, ROM, a mini hard drive, a GPS receiver module, a flash memory, flash memory drive reader, a USB Hub, a Trackpoint™ device, a keyboard or keypad, a fingerprint reader, or a SIM card reader. Also disclosed, are software controls for mapping the mouse velocity to a cursor velocity and for controlling the function and settings of the Trackpoint device. Further disclosed is a method for assigning the mouse's data output to a variety of devices connected to a wired or wireless network.

Vertical body transistors with adjacent horizontal gate layers are used to form a memory array in a high density flash electrically erasable and programmable read only memory (EEPROM) or a logic array in a high density field programmable logic array (FPLA). The transistor is a field-effect transistor (FET) having an electrically isolated (floating) gate that controls electrical conduction between source regions and drain regions. If a particular floating gate is charged with stored electrons, then the transistor will not turn on and will provide an indication of the stored data at this location in the memory array within the EEPROM or will act as the absence of a transistor at this location in the logic array within the FPLA. The memory array or the logic array includes densely packed cells, each cell having a semiconductor pillar providing shared source and drain regions for two vertical body transistors that have control gates overlaying floating gates distributed on opposing sides of the semiconductor pillar. Both bulk semiconductor and silicon-on-insulator embodiments are provided. If a floating gate transistor is used to store a single bit of data or to represent a logic function, an area of only 2F<2 >is needed per respective bit of data or bit of logic, where F is the minimum lithographic feature size.

A serial flash integrated circuit is provided with an integrated error correction coding ("ECC") system that is used with an integrated volatile page memory for fast automatic data correction. The ECC code has the capability of correcting any one or two bit errors that might occur on a page of the flash memory array. One bit corrections are done automatically in hardware during reads or transfer to the page memory, while two-bit corrections are handled in external software, firmware or hardware. The ECC system uses a syndrome generator for generating both write and read syndromes, and an error trapper to identify the location of single bit errors using very little additional chip space. The flash memory array may be refreshed from the page memory to correct any detected errors. Data status is made available to the application prior to the data. The use of the ECC is optional.

A combination of sensors, including solid-state gyros and force-sensitive resistors, are mounted in an insole suitable for insertion into a shoe. Data from the sensors is recorded by an in situ Programmable Interface Controller (PIC), logged into on-board EEPROM / Flash memory and relayed to a base station computer via a miniature telemetry transmitter triggered by RFID tagging. Software then uses this data to compute the cadence and ankle power of the subject, as well as other parameters, in order to analyze and assess the gait and activity of the subject.

In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The sometimes conflicting needs to maintain data integrity and system performance are balanced by deferring execution of some of the corrective action when the memory system has other high priority operations to perform. In a memory system utilizing very large units of erase, the corrective process is executed in a manner that is consistent with efficiently rewriting an amount of data much less than the capacity of a unit of erase.

The invention provides a flash storage device. In one embodiment, the flash storage device comprises a flash memory and a controller. The flash memory comprises a plurality of storage units for data storage, wherein the total capacity of each of the storage units is equal to a storage unit capacity. When the flash storage device receives a read capacity command from a host, the controller determines the size of a logical block to be a specific multiple of the storage unit capacity, and sends information about the logical block size to the host in response to the read capacity command, wherein the specific multiple is a natural number. After the host receives the information from the flash storage device, the host retrieves the logical block size from the information, and sends only write data with an amount equal to a multiple of the logical block size to the flash storage device.

Apparatus and methods, such as those that read data from non-volatile integrated circuit memory devices, such as NAND flash. For example, disclosed techniques can be embodied in a device driver of an operating system. Errors are tracked during read operations. If sufficient errors are observed during read operations, the block is then retired when it is requested to be erased or a page of the block is to be written. One embodiment is a technique to recover data from uncorrectable errors. For example, a read mode can be changed to a more reliable read mode to attempt to recover data. One embodiment further returns data from the memory device regardless of whether the data was correctable by decoding of error correction code data or not.