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1124 results about "Programmable read-only memory" patented technology

A programmable read-only memory (PROM) is a form of digital memory where the setting of each bit is locked by a fuse or antifuse. It is one type of ROM (read-only memory). The data in them is permanent and cannot be changed. PROMs are used in digital electronic devices to store permanent data, usually low level programs such as firmware or microcode. The key difference from a standard ROM is that the data is written into a ROM during manufacture, while with a PROM the data is programmed into them after manufacture. Thus, ROMs tend to be used only for large production runs with well-verified data, while PROMs are used to allow companies to test on a subset of the devices in an order before burning data into all of them.

Floating gate transistor with horizontal gate layers stacked next to vertical body

Vertical body transistors with adjacent horizontal gate layers are used to form a memory array in a high density flash electrically erasable and programmable read only memory (EEPROM) or a logic array in a high density field programmable logic array (FPLA). The transistor is a field-effect transistor (FET) having an electrically isolated (floating) gate that controls electrical conduction between source regions and drain regions. If a particular floating gate is charged with stored electrons, then the transistor will not turn on and will provide an indication of the stored data at this location in the memory array within the EEPROM or will act as the absence of a transistor at this location in the logic array within the FPLA. The memory array or the logic array includes densely packed cells, each cell having a semiconductor pillar providing shared source and drain regions for two vertical body transistors that have control gates overlaying floating gates distributed on opposing sides of the semiconductor pillar. Both bulk semiconductor and silicon-on-insulator embodiments are provided. If a floating gate transistor is used to store a single bit of data or to represent a logic function, an area of only 2F<2 >is needed per respective bit of data or bit of logic, where F is the minimum lithographic feature size.
Owner:MICRON TECH INC

Intelligent gas meter of Internet of things and control system thereof

The invention discloses an intelligent gas meter of the Internet of things and a control system thereof, belonging to an intelligent gas meter. The intelligent gas meter comprises a base meter, a CPU (Central Processing Unit) control module and a data transmission module. The base meter is provided with a source gas outlet and a source gas inlet. An electromechanical valve is installed close to the source gas inlet. The CPU control module is connected with the base meter and transmits a control signal to the base meter. The gas consumption standard of the base meter can be adjusted by the CPU control module. The CPU control module comprises an EEPROM (Electrically Erasable Programmable Read-Only Memory) data memory. The data transmission module is indirectly connected with the Internet of things and is also connected with a remote computer management system via the Internet of things. The data transmission module receives the control signal from the remote computer management system and feeds back the gas consumption information transmitted by the CPU control module to the computer management system. The intelligent gas meter of the Internet of things and the control system thereof are suitable for the gas use networks in areas and has the advantages of wide application range and easiness of generalization.
Owner:CHENGDU QINCHUAN IOT TECH CO LTD

Configuration, refreshing and program upgrading integrated system for SRAM (Static Random Access Memory) type FPGA (Field Programmable Gate Array)

The invention discloses a configuration, refreshing and program upgrading integrated system for an SRAM (Static Random Access Memory) type FPGA (Field Programmable Gate Array), belongs to the technical field of aerospace and aims to solve the problem of SEU (Single Event Upset) of the SRAM type FPGA in a spatial irradiation environment. The configuration, refreshing and program upgrading integrated system has a capability of performing program upgrading on the SRAM type FPGA which is in on-orbit work for a long time. The configuration, refreshing and program upgrading integrated system comprises an on-site programmable logic gate array SRAM type FPGA, a comprehensive management anti-fuse FPGA, a configuration program storage chip PROM (Programmable Read-Only Memory), an on-orbit upgrading program storage chip EEPORM (Electrically-Erasable Programmable Read-Only Memory) and an RS422 interface chip. The configuration, refreshing and program upgrading integrated system disclosed by the invention can be used for effectively solving the problem of the SEU of the SRAM type FPGA which is in on-orbit work for a long time and correcting the SEU and single event accumulation inside the SRAM type FPGA without being shut down, also has the function of on-orbit program upgrading of the SRAM type FPGA, and has the characteristics of instantaneity, reliability, flexibility, universality and low cost.
Owner:HUAZHONG UNIV OF SCI & TECH

Smart physiologic parameter sensor and method

A sensor assembly used for the measurement of one or more physiologic parameters of a living subject which is capable of storing both data obtained dynamically during use as well as that programmed into the device. In one embodiment, the sensor assembly comprises a disposable combined pressure and ultrasonic transducer incorporating an electrically erasable programmable read-only memory (EEPROM), the assembly being used for the non-invasive measurement of arterial blood pressure. The sensor EEPROM has a variety of information relating to the manufacture, run time, calibration, and operation of the sensor, as well as application specific data such as patient or health care facility identification. Portions of the data are encrypted to prevent tampering. In a second embodiment, one or more additional storage devices (EEPROMs) are included within the host system to permit the storage of data relating to the system and a variety of different sensors used therewith. In a third embodiment, one or more of the individual transducer elements within the assembly are made separable and disposable, thereby allowing for the replacement of certain selected components which may degrade or become contaminated. Methods for calibrating and operating the disposable sensor assembly in conjunction with its host system are also disclosed.
Owner:CONERO RONALD S +1

Vertical transistor with horizontal gate layers

Vertical body transistors with adjacent horizontal gate layers are used to form a memory array in a high density flash electrically erasable and programmable read only memory (EEPROM) or a logic array in a high density field programmable logic array (FPLA). The transistor is a field-effect transistor (FET) having an electrically isolated (floating) gate that controls electrical conduction between source regions and drain regions. If a particular floating gate is charged with stored electrons, then the transistor will not turn on and will provide an indication of the stored data at this location in the memory array within the EEPROM or will act as the absence of a transistor at this location in the logic array within the FPLA. The memory array or the logic array includes densely packed cells, each cell having a semiconductor pillar providing shared source and drain regions for two vertical body transistors that have control gates overlaying floating gates distributed on opposing sides of the semiconductor pillar. Both bulk semiconductor and silicon-on-insulator embodiments are provided. If a floating gate transistor is used to store a single bit of data or to represent a logic function, an area of only 2F2 is needed per respective bit of data or bit of logic, where F is the minimum lithographic feature size.
Owner:MICRON TECH INC
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