5 results about "One time programmable" patented technology

A method for fabricating a semiconductor device includes the steps of first providing a substrate comprising an one time programmable (OTP) device region, forming a shallow trench isolation (STI) in the substrate, removing part of the STI to form a first step on a corner of the substrate, forming a first gate oxide layer on the substrate, removing the first gate oxide layer to form a second step on the corner of the substrate, forming a second gate oxide layer on the substrate, and then forming a first gate structure on the substrate and the STI.

The application provides a one-time programmable device forming method, which comprises the following steps: providing a semiconductor device, which comprises a floating gate and a control gate located on an epitaxial layer and arranged at intervals, and a source end and a drain end located in the epitaxial layer and on both sides of the floating gate and the control gate, and an interlayer dielectric layer is further formed on the floating gate and the control gate; forming a via in the interlayer dielectric layer, and filling the via with tungsten by introducing WF6 gas and hydrogen, so as to form a via structure connected with the source end and / or the drain end, wherein, during the tungsten filling process, when the filling operation is interrupted and / or the hydrogen flow is insufficient, the following operations are performed: the temperature of the via filling process condition is set to 300-500 DEG C, the hydrogen flow is set to 500-700 sccm, and the hydrogen introduction time is set to 30-50 s; and the one-time programmable device is filled with tungsten by using the via filling process condition. The application reduces the occurrence of test failure of data retention.

A semiconductor device includes an active region on a frontside of the semiconductor. The active region includes an anti-fuse control cell including a plurality of first transistors. The semiconductor device includes a frontside metallization layer coupled with the plurality of first transistors. The semiconductor device includes a one-time-programmable circuit on a backside of the semiconductor device. The one-time-programmable circuit includes a second transistor coupled with a programing wordline (WLP) line of the anti-fuse control cell. The one-time-programmable circuit includes a third transistor coupled with a read wordline (WLR) line of the anti-fuse control cell. The semiconductor device includes a backside metallization layer coupled with the second and third transistor.

Because OTP (One Time Programmable) memory, which consists of an antifuse element or a fuse element, lacks a write control function, there is a risk of writing incorrect information due to accidental operation or ESD. [Solution] A memory device having first and second semiconductor memory circuits, each containing a memory element that can be written to only once, characterized in that information stored in the second semiconductor memory circuit is written to the memory element of the first semiconductor memory circuit.

This invention discloses a one-time programmable read-only memory, its control method, and a storage unit, belonging to the field of data storage. When performing a write operation, the invention breaks down the gate oxide layer of the first field-effect transistor specified by the write operation instruction, enabling it to have gate leakage current during operation. When performing a read operation, based on applying a working voltage to the gate of the second field-effect transistor specified by the read operation instruction, the binary value represented by the second field-effect transistor is determined by detecting whether the second field-effect transistor has a sufficient gate leakage current. Since a floating gate structure is no longer used to store charge, a thick floating gate dielectric layer is not required for the field-effect transistor, thereby reducing the process complexity and cost of the field-effect transistor.