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34113 results about "Storage cell" patented technology

Storage Cells. Storage Cells, are one of the core mechanics of storage in Applied Energistics 2, there are two kinds, one for quantities of items, and one for regions of space. Item storage cells can hold up to 63 distinct types of items; the number of items they can store depends in part on how many types they're holding; see also ME Storage Math.

Software update method, apparatus and system

A system for remotely updating software on at least one electronic device connected to a network. The electronic devices have a non-volatile rewritable storage unit divided into at least two partitions, one of which will contain core firmware and the other of which will contain auxiliary software. When an update is received at the device, the updated core firmware is written to overwrite the partition in the rewritable storage unit that contained the auxiliary software. When this is completed and verified, the previous version of the core firmware stored in the storage unit is disabled from execution by the device. Next, the updated auxiliary software is written to overwrite the old version of the core firmware. When this write is complete, the device determines a suitable time for it to be rebooted to execute the updated software. In another embodiment, the present core firmware in the device is copied from the partition it is in to the other partition, overwriting the auxiliary software stored there. The new core firmware received to update the device is overwritten into the first partition, the old copied core firmware being present in case of an upgrade failure, and upon a successful update of the first partition, the auxiliary software is written to the second partition, overwriting the copied old core firmware. In this manner, the position of the core firmware and auxiliary software within the partitions is preserved during normal operation of the device.

Method of managing fails in a non-volatile memory device and relative memory device

A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. Each block including at least one failed cell in the first subset is located during a test on wafer of the non-volatile memory device. Each block is marked as bad, and a bad block address table of respective codes is stored in a non-volatile memory buffer. At power-on, the bad block address table is copied from the non-volatile memory buffer to the random access memory. A block of memory cells of the first subset is verified as bad by looking up the bad block address table, and if a block is bad, then remapping access to a corresponding block of redundancy cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.

Method and apparatus for storage unit replacement in non-redundant array

A method and apparatus used in a storage network facilitates the protection of data in, and replacement of, storage devices about to fail before the failure happens. In a network that includes a set of storage devices organized as a non-redundant (for example RAID 0) array, a storage device about to fail in the non-redundant array can be replaced by another storage device, typically from a pool of spares. The method includes detecting a condition of a first particular storage device in the non-redundant array. Conditions which are detected according to various embodiments indicate that the first particular storage device is suffering events indicating that it is likely to fail, or otherwise suffering from reduced performance. The conditions are detected for example, by the receipt of a signal from the storage device itself, or by the monitoring of statistics concerning the performance of the storage device. The method further provides for selecting a particular spare storage device, which can be used in place of the first particular storage device. In response to detecting the condition, data stored in the first particular storage device is migrated to the second particular storage device, and the second particular storage takes the place of the first particular storage device in the non-redundant array. The first particular storage device can then be gracefully removed from the network without loss of service to the clients computers.

Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory

A fast low voltage ballistic program, ultra-short channel, ultra-high density, dual-bit multi-level flash memory is described with a two or three polysilicon split gate side wall process. The structure and operation of this invention is enabled by a twin MONOS cell structure having an ultra-short control gate channel of less than 40nm, with ballistic injection which provides high electron injection efficiency and very fast program at low program voltages of 3~5V. The cell structure is realized by (i) placing side wall control gates over a composite of Oxide-Nitride-Oxide (ONO) on both sides of the word gate, and (ii) forming the control gates and bit diffusion by self-alignment and sharing the control gates and bit diffusions between memory cells for high density. Key elements used in this process are: 1) Disposable side wall process to fabricate the ultra short channel and the side wall control gate with or without a step structure, and 2) Self-aligned definition of the control gate over the storage nitride and the bit line diffusion, which also runs in the same direction as the control gate. The features of fast program, low voltage, ultra-high density, dual-bit, multi-level MONOS NVRAM of the present invention include: 1) Electron memory storage in nitride regions within an ONO layer underlying the control gates, 2) high density dual-bit cell in which there are two nitride memory storage elements per cell, 3) high density dual-bit cell can store multi-levels in each of the nitride regions, 4) low current program controlled by the word gate and control gate, 5) fast, low voltage program by ballistic injection utilizing the controllable ultra-short channel MONOS, and 6) side wall control poly gates to program and read multi-levels while masking out memory storage state effects of the unselected adjacent nitride regions and memory cells. The ballistic MONOS memory cell is arranged in the following array: each memory cell contains two nitride regions for one word gate, and ½ a source diffusion and ½ a bit diffusion. Control gates can be defined separately or shared together over the same diffusion. Diffusions are shared between cells and run in parallel to the side wall control gates, and perpendicular to the word line.

Configuring vectors of logical storage units for data storage partitioning and sharing

In a data storage subsystem providing data storage to host processors, a process of configuration defines a subset of the data storage that each host may access. A vector specification is a convenient mechanism for specifying a set of storage volumes that a host may access. For example, for each host processor, there is stored in memory of the data storage subsystem a list of contiguous ranges or vectors of the storage volumes that the host may access. To determine whether or not a specified logical volume number is included in the vector, a modulus of the stride of the vector is computed from the difference between the address of the specified logical volume and the beginning address of the vector, and the modulus is compared to zero. To provide a mapping between logical unit numbers specified by the host and the logical volumes, a contiguous range of logical unit numbers may also be specified for each contiguous range or vector of storage volumes. The logical volume number is computed from a specified logical unit number by computing a difference between the specified logical unit number and the beginning logical unit number, multiplying the difference by the stride of the vector to produce a product, and adding the product to the beginning address of the vector.
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