576 results about "High electron" patented technology

The invention relates to the technical field of gallium nitride transistors, and discloses a silicon carbide-gallium nitride heterogeneous integrated high-voltage power device structure, which comprises a silicon carbide device consisting of a plurality of parallel MOS (Metal Oxide Semiconductor) cells and a gallium nitride device consisting of two GaN structures, and is characterized in that the gallium nitride device is positioned on the back surface of the silicon carbide device; each MOS cell comprises a semiconductor epitaxial layer, an MOS source electrode, an MOS grid electrode and an MOS dielectric layer covering the surface of the MOS grid electrode; wherein the semiconductor epitaxial layer comprises an N substrate layer and an N diffusion layer from top to bottom. The transverse high electron mobility characteristic of the GaN HEMT and the longitudinal voltage withstanding advantage of the SiC MOSFET are combined, cooperative work of two wide bandgap semiconductors is achieved on a single substrate, the structure effectively utilizes the excellent heat conduction and voltage withstanding performance of the SiC substrate as a common carrier, meanwhile, through the series voltage withstanding design of the device level, the performance of the device level is improved, and the performance of the device level is improved. And the overall breakdown voltage is obviously improved.

The invention provides a calibration method of electron beam measuring equipment and a related product. The calibration method comprises the following steps: acquiring an initial scanning image of a wafer acquired by the electron beam measurement equipment at an initial position in a preset view field; controlling the wafer to move for a preset distance along a preset direction, and acquiring a translation scanning image acquired for the wafer under the condition of keeping the preset field of view unchanged; determining a first position coordinate of each positioning mark in the initial scanning image and a second position coordinate of each positioning mark in the translation scanning image; obtaining a distortion model of the electron beam measurement equipment according to the displacement of the second position coordinates and the first position coordinates of the positioning marks in the preset direction; and calibrating the electron beam measuring equipment by using the distortion model. According to the method, the distortion degree of the scanned image of the electron beam measurement equipment can be reduced, and the measurement precision of the electron beam measurement equipment is improved.

The invention discloses a method for improving size precision and surface quality of Nb521 alloy formed through electron beam selective melting. The method comprises the steps that firstly, a three-dimensional model of the Nb521 alloy is stretched in the height direction, slicing and layering are conducted, each single slicing layer is divided into an inner area and an outer area, and data of each slicing layer are obtained; secondly, spherical Nb521 pre-alloyed powder is added, and data of all cutting layers are imported; 3, after powder spreading, scanning and melting in different areas to form a first single-layer solid sheet layer; and 4, powder spreading and melting processes are repeated. According to the method, through height stretching pre-compensation cooling shrinkage of the Nb521 alloy three-dimensional model, a single cutting layer is divided into a surface area and an internal area, double-concentric-square-shaped contour scanning is conducted on the surface area, snakelike continuous scanning, negative defocusing and corner dynamic adjustment are conducted on the internal area, the forming quality and efficiency are guaranteed, and the method is suitable for large-scale production. And the size precision and the surface quality of the Nb521 alloy part are improved, and the method is suitable for manufacturing Nb521 alloy complex structural parts.

The invention discloses a method for efficiently generating high-brightness gamma radiation, and belongs to the technical field of radiation. A relativistic electron beam is injected into the porous microstructure foam target material, and high-brightness gamma ray radiation is generated. According to the method, the used device is simple, only the single relativistic electron beam and the porous microstructure foam target material are needed to interact, compared with a traditional uniform-density solid material, the energy conversion efficiency in the interaction process of the electron beam and a substance can be remarkably improved, and the energy conversion efficiency can be remarkably improved through the effective constraint effect of a high-intensity magnetic field. And the problems of low energy conversion rate, low light source brightness, poor radiation directivity, complex device or difficulty in experiment implementation and the like of the existing high-energy gamma ray radiation source are solved.

The utility model discloses a parallel operation copper bar and system of an electronic load, and the parallel operation copper bar comprises a positive electrode copper bar which is used for connecting the positive electrode power input end of the electronic load; the cathode copper bar is used for connecting a cathode power input end of the electronic load, and the cathode copper bar and the anode copper bar are oppositely arranged at an interval; the insulating plate is arranged between the positive electrode copper bar and the negative electrode copper bar, and the positive electrode copper bar and the negative electrode copper bar are tightly attached to one side face of the insulating plate respectively. According to the invention, the amplitude of current overshoot oscillation can be reduced, and the reliability and safety of the parallel operation system of the electronic load are improved.

The application relates to the technical field of lithium ion batteries, and discloses a silicon-carbon nanotube composite material, which is obtained by dehydration of hydroxylated silicon particles, hydroxylated carbon nanotubes and iminodiacetic acid. The silicon-carbon nanotube composite material provided by the application can anchor the silicon particles on the carbon nanotubes through covalent bond action, can increase the uniformity of dispersion of the carbon nanotubes and the silicon particles, can improve the electron transmission capacity, can play a certain counterforce on the volume expansion force of the silicon particles, can reduce the generation of electrode cracks, can further reduce the consumption of electrolyte, and can improve the cycle stability of the whole electrode. Meanwhile, the preparation method provided by the application does not need a complex operation process, has simple process condition requirements, and is suitable for large-scale production.

The present application relates to the detection method of peroxynitrate in the atmosphere, comprising: the six-way valve is adjusted to the sampling mode, the carrier gas and air inlet are opened, the carrier gas is swept to the chromatographic column and the electron capture detector in turn after passing through the first passage of the six-way valve, and the negative pressure device on the downstream side of the electron capture detector is opened at the same time; the air enters the sampling ring through the second passage of the six-way valve, and the excess air is discharged by using the air pump; the six-way valve is adjusted to the detection mode, the carrier gas enters the sampling ring through the third passage, the air sample in the sampling ring is taken out and brought into the chromatographic column; the PANs in the air sample are separated in the chromatographic column, and then enter the electron capture detector for detection, at the same time, the internal pressure of the electron capture detector is regulated and controlled by the negative pressure device to be stable negative pressure, the peak of the compound to be detected is accelerated, and the sensitivity of the electron capture detector to the detection is improved.

The utility model provides a kind of electronic atomizer, including main casing, upper atomization subassembly, common cover, lower atomization subassembly and electric control component are sequentially arranged from top to bottom in main casing, common cover is provided with transfer port, lower atomization subassembly is provided with first passage and second passage, first passage or second passage is provided with lower atomization core, the upper atomization passage of upper atomization subassembly is communicated with the one end of first passage and second passage by transfer port, the bottom of main casing is connected with bottom cover, the other end of first passage and second passage is communicated with outside air by bottom cover, the electric lead of upper atomization core in upper atomization passage is connected to the electric control component on lower end of lower atomization subassembly by first passage or second passage.For the utility model, by increasing a passage in lower atomization subassembly, the wire routing of upper atomization subassembly can reduce the complexity of connection between upper atomization subassembly, lower atomization subassembly and main casing, thereby improve the overall assembly efficiency of electronic atomizer.

The application relates to a multi-axis mechanical arm-based electrostatic protection test system, and relates to the field of electrostatic discharge test, which comprises a workbench, a fixing device, a discharge device, a grabbing device, a detection device and a gun head replacing device; the grabbing device moves the electronic equipment to the fixing device, and the fixing device clamps the electronic equipment; the detection device is used for detecting the electronic equipment; the discharge device comprises an electrostatic gun driving assembly and an electrostatic gun, the electrostatic gun driving assembly drives the electrostatic gun to move, and the electrostatic gun moves to the position of the electronic equipment to discharge; the gun head replacing device comprises a replacing support frame, a replacing driving piece and a plurality of gun head placing seats; when the electrostatic gun abuts against the inner wall of the gun head placing seat, the replacing driving piece drives the gun head placing seat to rotate, so that the gun head of the electrostatic gun is taken off or installed. The application has the effect of improving the detection efficiency of the electronic equipment.

The application discloses a kind of gold nanoparticle loaded oxygen-doped ultrathin porous boron nitride film electrode and preparation method thereof, the preparation method includes the following steps: according to mass ratio 1:3-6:0.25-0.35, boric acid, urea, oxalic acid is prepared oxygen-doped ultrathin porous boron nitride, then gold nanoparticle is loaded oxygen-doped ultrathin porous boron nitride and coated on conductive substrate to form film electrode.The oxygen-doped ultrathin porous boron nitride film electrode loaded with gold nanoparticles prepared by the application has the advantages of large specific surface area, high electron-hole separation efficiency, fast electron transfer rate, etc., is a new type of film electrode with excellent photoelectric performance, meets the actual production demand, and has wide application prospect in photoelectrochemical field.The preparation method also has the advantages of simple process, easy operation, high preparation efficiency and low cost, and is suitable for large-scale preparation, which is beneficial to industrial application.

The application discloses a kind of aromatic amine epoxy resin curing agent and its design method and insulating epoxy resin and its preparation method, belong to insulating technical field.At least two benzene ring structures are designed, and the benzene ring structures are connected by functional bridge bond;An amino functional group is respectively arranged at the two ends of the designed structure;High electron-withdrawing substituent group is not arranged at the ortho position of the designed amino functional group;Get aromatic amine epoxy resin curing agent;Functional bridge bond is arranged at the 1,4 or 1,3 substitution site of benzene ring structure.Multiple aromatic diamines are used as the curing agent component of epoxy resin, rigid aromatic structure is introduced into the epoxy main chain to enhance its thermal stability and improve the glass transition temperature;Functional bridge bond is introduced between benzene rings as breaking benzene ring conjugated structure, to improve electrical performance.Can prepare high-temperature stability and high-resistance high-voltage direct-current insulating epoxy resin.Help to solve the electrical performance of key insulating parts in DC GIS / GIL under the action of high temperature gradient and high electric field.

The application discloses a device operation control method, an electronic device and a storage medium, and relates to the technical field of terminal devices. In the application, when the electronic device is in an off-screen state, if a proximity light sensor in the electronic device detects that the electronic device is currently in an unblocked state, and the number of touch events received by the touch screen of the electronic device within a set time length reaches a set number, the pose and motion state of the electronic device are acquired, and whether the touch screen of the electronic device is lighted is determined according to the pose and motion state of the electronic device, so that the electronic device can be prevented from frequently turning on the screen due to accidental touch of the touch screen of the electronic device, the anti-accidental touch effect of the electronic device is improved, and the power consumption of the electronic device is saved.

The embodiment of the invention provides a memory array and a preparation method thereof, a memory and electronic equipment, relates to the technical field of semiconductors, and is used for reducing the power consumption of a ferroelectric memory. The memory array includes a substrate and a plurality of ferroelectric capacitors. The substrate comprises a first area and a plurality of second areas, and the first area is located between every two adjacent second areas. A plurality of ferroelectric capacitors are located on the plurality of second regions. The ferroelectric capacitor includes a first plate, a second plate, and a ferroelectric layer. The first pole plate extends along the thickness direction of the substrate. The second pole plate is located on the surface of the first pole plate away from the substrate. The ferroelectric layer is located between the second pole plate and the first pole plate. Wherein the second pole plates of the plurality of ferroelectric capacitors located on the same second area are connected to form plate lines, and the plate lines located on different second areas are arranged at intervals. The storage array is applied to the electronic equipment, and the performance of the electronic equipment is improved.

The application relates to a charging state visualization method and a computer device. In response to a charging connection event, a first dynamic figure is presented on a display screen, the first dynamic figure comprising a visual element for dynamically displaying a current battery power; in response to identifying a change in a charging state or protocol, a second dynamic figure is presented on the display screen, the second dynamic figure comprising at least one visual element of a target dynamic figure, the target dynamic figure comprising the first dynamic figure and / or a third dynamic figure; wherein the first dynamic figure, the second dynamic figure and the third dynamic figure are all used to represent charging-related state information. The method can improve the information acquisition efficiency of the charging state of the electronic device.

The invention discloses a high-modulus inorganic-organic hybrid phase change protection layer for a lithium metal negative electrode. The composite material is composed of a lithium-loving inorganic component and a high-modulus organic component, and an inorganic lithium-loving phase is in star-like distribution in an organic polymer matrix. The inorganic component is composed of a lithium-loving inorganic substance (preferably lithium alloy) for rapid lithium ion transmission and a lithium halide (preferably fluoride) with high electron insulation property in a composite structure, and the binding force and the mechanical strength are enhanced through in-situ interface chemical reaction with lithium metal; the organic component is composed of a thermal-response high-elasticity-modulus phase-change high-molecular polymer (preferably a thermal polymerization organic matter), the polymerization degree is increased along with temperature rise, and good flexibility and electrolyte wettability are provided for the protective layer through an in-situ polymerization phase-change reaction. The protective layer is mainly used for the negative electrode of the lithium metal battery, effectively regulates and controls the deposition and stripping uniformity of lithium ions on the surface of lithium metal, remarkably inhibits the growth of lithium metal dendrites, improves the cycling stability and coulombic efficiency of the battery, and enhances the safety of the battery.

The invention provides a MnZn ferrite material with wide temperature range, low loss and high Bs as well as a preparation method and application of the MnZn ferrite material. The MnZn ferrite material is prepared from main components and additives, the main component is prepared from the following components in mole percent: 52.85 to 53.15 mol percent of Fe2O3; the content of MnO is 37.40 to 37.90 mol%; the balance is ZnO; the additive comprises any one of CaCO3, Nb2O5 or Co2O3 or a combination of at least two of the CaCO3, the Nb2O5 and the Co2O3. By reasonably controlling the ratio of Fe2O3 to MnO in the MnZn ferrite material and the sintering process, the single valley point of the traditional MnZn ferrite material is changed, the MnZn ferrite material with wide temperature range, low loss and high Bs is finally prepared, the requirements of energy conservation, emission reduction and improvement of the working efficiency of electronic components are better met, and large-scale popularization and application are facilitated.

The invention provides a composite solid electrolyte, an all-solid-state positive pole piece and a preparation method and application thereof, the composite solid electrolyte is characterized by comprising a plurality of composite solid electrolyte particles, and each composite solid electrolyte particle at least comprises a conductive agent, an all-solid-state positive pole piece and an all-solid-state positive pole piece, and the solid electrolyte partially or completely wraps the conductive agent, and a network structure is formed between the conductive agent and the solid electrolyte. According to the composite solid electrolyte, the all-solid-state positive pole piece and the preparation method and application of the all-solid-state positive pole piece, a three-dimensional continuous conductive network can be constructed, and the electron and ion conduction efficiency can be improved, so that the rate capability and the cycle performance of an all-solid-state battery can be improved.

The utility model is suitable for the technical field of batteries, and provides a battery device and a power utilization device. A battery cell accommodated in the case; the electronic control component is contained in the box body and comprises a first shell and an electronic device arranged in the first shell, the first shell is connected to the box body, a cavity is formed in the first shell, an electric connection structure is contained in the cavity, the electronic device is contained in the cavity and electrically connected to the electric connection structure, and a glue structure is arranged between the electronic device and the first shell. The glue structure is used for bonding the electronic device to the first shell; according to the battery device provided by the embodiment of the invention, the electronic device is adhered to the first shell of the electric control part, and the electronic device is electrically connected with the electric connection structure, so that the connection stability between the electronic device and the first shell and between the electronic device and the electric connection structure is improved.

The utility model discloses a kind of cathode heater subassemblies for klystron electron gun, it is characterized in that, including: cathode base, heater sleeve, heater and detachable heat shield assembly, the upper and lower two end surfaces of cathode base are respectively provided with emitting surface and mounting groove, heater sleeve is detachably fixed in mounting groove, and the end surface of heater sleeve back to cathode base is equipped with accommodating groove;Heater is installed in accommodating groove, and the part of heater in accommodating groove is wrapped with insulating layer;Heat shield assembly includes outer heat shield and inner heat shield, outer heat shield is sleeved in cathode base, and inner heat shield is installed in outer heat shield and covers heater sleeve and heater.The utility model can realize reversibility dismounting and maintenance, and heater material volatilization can be avoided directly deposited on the emitting surface of cathode base, help to maintain the emitting surface cleanliness of cathode base, to improve electron emission efficiency, high-temperature solder can also be reduced in use, reduce cost.

The invention discloses a preparation method and application of an efficient photocatalyst Sm-POM-MOF with a high electron transfer rate, and relates to a preparation method and application of a photocatalyst. The problems that an existing POM-coated MOF composite material cannot achieve efficient loading of POM while keeping the MOF structural integrity, an efficient interface electron transmission channel cannot be constructed, and the CH4 generation rate cannot be increased are solved. The preparation method comprises the following steps: 1, preparing an acidified Na2WO4 solution; 2, preparing a needle-shaped Sm-POM crystal; 3, preparing a solution containing zirconium metal oxygen clusters; and 4, carrying out hydrothermal reaction. According to the application, the photocatalyst is used for reducing CO2 to prepare CH4.

This application provides a heat dissipation device and electronic device, including: a condenser having an internally vacuumed and sealed cavity; a liquid pipe containing a liquid working fluid, one end of which is connected to the condenser; a compensation chamber having an internally vacuumed and sealed cavity, through which the liquid pipe passes and communicates with the compensation chamber, and a liquid-absorbing core covering the surface of the liquid pipe within the compensation chamber; an evaporator having an internally vacuumed and sealed cylindrical structure, comprising a vapor channel, a first capillary core, and a second capillary core stacked sequentially from the outer wall surface of the cylindrical structure to the central axis, the other end of which penetrates a portion of the evaporator, and the second capillary core covering a portion of the surface of the liquid pipe; a gas pipe, one end of which is connected to the vapor channel, and the other end of which is connected to the condenser; and a heat-conducting plate covering the outer surface of the evaporator. The heat dissipation device and electronic device provided in this application embodiment at least improve the heat dissipation efficiency of electronic devices.

Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

The embodiment of the application provides an electronic device, relates to the technical field of electronic devices, a frame is arranged on the outer peripheral side of a bottom plate, a flange is arranged along the circumference of the inner side wall of the frame, a glass plate is buckled on the flange and forms a containing cavity with the shell, the inner surface of the glass plate is provided with a circumferentially arranged black border, the black border is provided with a silk screen hole, a display screen is arranged on the inner surface, the silk screen hole is located in a first interval between the display screen and the flange, a shell of a camera module is arranged on the bottom plate, a part of the structure of the shell extends into the first interval, the distance from the first step surface on the outer surface of the shell to the surface of the display screen facing the bottom plate is h, a metal sheet is arranged on the side of the fixing seat facing the display screen, when h is greater than 0, the metal sheet is clamped between the first step surface and the display screen. The electronic device provided by the application can reduce the width of the black border, improve the screen ratio of the display screen, improve the display effect of the electronic device and the aesthetic degree of the appearance of the electronic device.

The embodiments of the present application relate to the technical field of terminals, and provide a display screen control method and a related apparatus. The display screen control method is applied to an electronic device comprising a display screen. The method comprises: receiving an operation of switching from a first operating mode to a second operating mode, reset black bars displayed by the display screen in the first operating mode being more than reset black bars displayed by the display screen in the second operating mode; and, on the basis of the operation, sending a first frame rate switching instruction to the display screen, such that the display screen adapts to the second operating mode. By means of sending to the display screen the first frame rate switching instruction that enables the display screen to adapt to the second operating mode, the display screen can switch from the first operating mode to the second operating mode, achieving operating mode switching of the display screen and meeting the use requirements of users for the display screen, thus improving the flexibility of display modes of electronic devices and use experience of users.

Title: Microelectronic Power Device The invention relates to a power device comprising: - High electron mobility transistors (T1, T2, T3) formed on an active layer (11), each transistor (T1, T2, T3) comprising a source finger (S), a drain finger (D), and a gate finger (G), - A source contact (S') common to the source fingers (S), - A drain contact (D') common to the drain fingers (D), - A gate contact (G') common to the gate fingers (G). Advantageously, at least one gate finger is not connected to the gate contact (G') and forms a Schottky contact (CS) with the active layer (11). This gate finger (CS) advantageously forms, with the adjacent drain finger (D), a Schottky diode (DS) configured to measure an operating temperature within the power device. Figure for the abstract: Fig. 2A

This application discloses a thin film, its preparation method, and an optoelectronic device, relating to the field of display technology. The thin film includes a first film layer, the material of which includes a first core-shell quantum dot. The first core-shell quantum dot includes a first quantum dot core and a first shell layer covering the first quantum dot core. The first film layer has a first surface and a second surface disposed opposite to each other. The thickness of the first shell layer near the first surface is less than the thickness of the first shell layer near the second surface. And / or, along the thickness direction of the thin film, the distance between the center of the first quantum dot core and the first surface is less than the distance between the center of the first quantum dot core and the second surface. The thin film provided in this application has a thinner first shell layer near the first surface, which is beneficial for improving electron injection efficiency, and a thicker second shell layer near the second surface, which is beneficial for preventing electron leakage to the hole side.

This application provides a thin-film transistor (TFT), its fabrication method, and an electronic device. The TFT includes a substrate, an active layer, a gate layer, and source / drain layers. The active layer is disposed on one side of the substrate and includes a doped layer and a channel layer. The channel layer is disposed on the doped layer. The gate layer is disposed on the side of the active layer away from the substrate, and the source / drain layers are disposed on the side of the gate layer away from the active layer. The doped layer includes lightly doped and heavily doped portions, which are horizontally intersecting. The source / drain layers are connected to the heavily doped portions. By using the active layer as both the doped layer and the channel layer, during the crystallization of the channel layer, the high crystallization temperature causes the crystal within the doped layer to be in a molten state, leading to ion diffusion and direct formation of both the heavily doped and lightly doped portions. This eliminates the need for ion implantation, reducing the number of process steps in electronic device fabrication and improving fabrication efficiency.

The application provides an electro-catalysis system applied to an anaerobic biological treatment technology, an electrode assembly and application. The electrode assembly comprises an electrode frame, a plurality of cathode electrode plates and a plurality of anode electrode plates. The cathode electrode plates and the anode electrode plates are fixed on the electrode frame at intervals. A plurality of electro-catalysis fillers are arranged at intervals along the height direction of the cathode electrode plates and the anode electrode plates. The electro-catalysis fillers are made of a plurality of "8" type woven products around a center rope. The "8" type woven product is made of modified carbon fiber filaments and a nylon wire framework. The electro-catalysis filler made of the modified carbon fiber filaments can guarantee the strength of the filler, greatly reduce the use amount of carbon materials, reduce the cost and have good corrosion resistance. Since the carbon fiber material has excellent specific surface area, the amount of microorganisms can be enriched, and the efficiency of electron transfer can be improved. Since the nylon wire framework is adopted for support, the form of the filler is guaranteed, and efficient operation of the electro-catalysis reaction is guaranteed.

An electronic package and method for manufacturing is provided. The package includes an electronic component having a terminal, a solidified molding compound encapsulating the electronic component, a lead including an inner and a mounting portion. The molding compound includes a first recess at or near a perimeter of a bottom surface of the mounting portion, exposing a portion of a bottom surface of the inner portion arranged near the mounting portion, and / or a second recess at the perimeter of the bottom surface of the mounting portion, the second recess exposing a portion of a side surface of the mounting portion extending between the top and the bottom surface of the mounting portion. The package provides more exposed lead space for a larger solder covering area using the first and / or second recess. Thus, solder strain accumulation is reduced or mitigated, and reliability of the electronic package can be enhanced.