1611 results about "High electron" patented technology

The invention discloses a fan control method and device, equipment, a storage medium and a program product. The method is applied to the electronic equipment, the electronic equipment comprises a plurality of heat dissipation devices, each heat dissipation device comprises a corresponding hardware module and a fan module, parameter data of the hardware module in each heat dissipation device are collected, and the parameter data are used for determining the temperature of the hardware module; determining a rotating speed control strategy of a fan module in each heat dissipation device according to the parameter data; and then according to the running state of the electronic equipment, the rotating speed control strategy is adjusted, and the running state comprises at least one of a starting state, a standby state, a light load state and a heavy load state. According to the application, the parameter data of the hardware module in each heat dissipation device is collected and according to the parameter data, accurate control of the rotating speed of the fan is realized, and the heat dissipation efficiency of the electronic equipment is improved; the rotating speed of the fan is dynamically adjusted according to the running state of the electronic equipment, noise and energy consumption are effectively reduced, and the overall performance of the electronic equipment is enhanced.

The invention discloses a preparation method of an all-solid-state battery unit, the all-solid-state battery unit and an all-solid-state battery module. The preparation method comprises the following steps: 1) pressing and pre-calcining a positive electrode unit to form a sintered laminated body; (2) alternately overlapping at least one negative electrode and the sintered laminated body in the step (1) to form an all-solid-state battery laminated body, and pressurizing the laminated body; (3) carrying out low-temperature primary calcination on the all-solid-state battery laminated body in the step (2); (4) carrying out high-temperature secondary calcination on the all-solid-state battery laminated body obtained in the step (3); wherein the positive electrode unit in the step 1 comprises a solid electrolyte layer, a composite electrode layer and a current collector layer; the composite electrode layer comprises a high ion channel layer and a high electron channel layer. The stable particle space is constructed through multiple times of calcination, the interface impedance between the electrode layer and the electrolyte layer and the interface impedance between the electrode layers are reduced, the densification between the solid electrolyte and the electrode is improved, and the battery capacity and the cycle performance are improved.

Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically stacked between the bottom electrode and a top electrode overlying the bottom electrode. Further, the high electrode electron affinity dielectric layer has a highest electron affinity amongst the multiple different dielectric layers and is closest to the bottom electrode. The different dielectric layers are different in terms of material systems and / or material compositions. It has been appreciated that by arranging the high electron affinity dielectric layer closest to the bottom electrode, the likelihood of the memory cell becoming stuck during cycling is reduced at least when the memory cell is RRAM. Hence, the likelihood of a hard reset / failure bit is reduced.

The invention relates to the technical field of material detection, and discloses electronic product material detection equipment based on an intelligent sensor, which comprises a box body, the inner wall of the box body is fixedly connected with a bidirectional motor, the bottom of the box body is fixedly connected with supporting legs, the inner wall of the box body is provided with an optical sensor, and the inner wall of the box body is fixedly connected with an electric telescopic rod. According to the device, the detection precision of electronic materials can be improved, the detection sensitivity can be improved, the detection effect can be improved, the sensitivity of a sensor can be improved due to the fact that the materials are close to the sensor, a circuit board on the top of a placement plate can be fixedly clamped, and the detection precision of the device is improved; the situation that when the optical sensor detects the circuit board, the circuit board is affected by external adverse factors, then the position of the circuit board deviates, and consequently the precision of follow-up detection data is reduced is avoided.

The invention discloses a lithium iron phosphate positive electrode material and a preparation method thereof, and belongs to the technical field of lithium battery materials. Mixing and stirring the chelating dispersant, titanium dioxide and part of water for 2-3 hours, then adding the phosphorus source, the lithium source, the coated carbon source and the residual water, and continuously stirring for 0.5-1 hour to obtain mixed slurry; grinding the mixed slurry at 20-50 DEG C, and performing spray drying after grinding to obtain a lithium iron phosphate precursor; and heating the lithium iron phosphate precursor to 650-750 DEG C in 4-6 hours under the protection of nitrogen, roasting for 8-12 hours in the temperature range, and cooling and crushing to obtain the lithium iron phosphate positive electrode material. The lithium iron phosphate positive electrode material is prepared by the method; according to the method, the doped titanium forms linear order through chelating of the long-chain polymer, the doped titanium can be exposed on the surface of an iron-lithium atomic layer in the preparation process, and the electron conductivity is improved; and the long-chain structure of the polymer can promote the ordered arrangement of the iron-lithium atomic layer, so that the cycling stability and rate capability of the positive electrode material are further improved.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

The invention discloses an organic compound, a composition, an electronic device and a display panel. The organic compound has a structure as shown in formula (1): (1); the organic compound provided by the invention is an arylamine compound taking dibenzofuran or dibenzothiophene substituted by a heterocyclic group containing a nitrogen atom, an oxygen atom or a sulfur atom as a core structure, and can have a relatively high refractive index; when the organic compound provided by the invention is used in a covering layer of an electronic device, the refractive index of the covering layer can be effectively improved, so that the luminous efficiency of the electronic device is improved, and the electronic device with excellent performance can be realized.

The invention discloses a management method of a battery pack and electronic equipment, the management method of the battery pack is applied to a controller, the controller is connected with the battery pack through a detection circuit, and the battery pack comprises at least one battery cell; the management method comprises the following steps: acquiring the charging cycle index and the battery capacity of the battery cell through the detection circuit; and when it is determined that the number of charging cycles is greater than a preset number of times, corresponding charging and discharging power is matched according to the battery capacity so as to control the battery pack to charge and discharge. Through the controller outside the battery pack, after it is determined that the number of charging cycles is larger than a certain number of times, the corresponding charging and discharging power is matched according to the battery capacity of the battery cell, and the charging and discharging power at the moment is smaller than the charging and discharging power of a new battery cell, so that the probability of occurrence of safety problems is reduced, and the safety of electronic products is improved.

The application relates to the technical field of terminals, and discloses an electronic device and a cover. The electronic device comprises a cover, a display screen assembly and a main body. The cover is used for shielding a gap between the display screen assembly and the main body. The cover comprises a first part and a second part which are connected. The first part covers at least part of the edge of the display screen assembly. The second part extends from the first part towards the main body. The inside of the main body comprises an acoustic cavity, and the cover and / or the main body is provided with an acoustic outlet channel which is connected to the acoustic cavity and the outside of the mobile phone. The acoustic outlet of the acoustic outlet channel has an area greater than 0 in the region of the orthographic projection of the side projection plane. The side projection plane is perpendicular to the plane in which the display screen assembly is located and parallel to the edge of the display screen assembly corresponding to the acoustic outlet channel. The electronic device described above cannot be observed from the front, the acoustic outlet channel and the internal components cannot be observed, the appearance is improved, meanwhile, the size space of the display screen assembly can be increased, and the space utilization rate of the electronic device is improved.

The utility model provides an electronic expansion valve which comprises a first connecting pipe, a silencing part, a valve seat part and an adapting part, the valve seat part and the adapting part are connected with each other, the adapting part is respectively connected with the valve seat part and the first connecting pipe, the adapting part is provided with a containing cavity, and the silencing part is installed in the containing cavity in a limited mode. By the adoption of the scheme, the furnace welding object of the first connecting pipe is converted from the valve seat part to the switching part through the switching part, when the switching part and the first connecting pipe are subjected to furnace welding, the silencing part located in the containing cavity is separated from the first connecting pipe through the switching part, the first connecting pipe does not directly abut against the silencing part, welding flux generated during furnace welding cannot permeate into the silencing part, and the silencing effect is good. And the noise reduction effect of the noise reduction part and the flow capacity of the electronic expansion valve are ensured. And on the other hand, independent off-line installation of the switching part and the silencing part can be achieved, the production takt is reduced, part standardization is improved, the falling risk in the part turnover process is avoided, and the machining and installation efficiency of the electronic expansion valve is improved.

The embodiment of the invention discloses electronic equipment, a composite board and a preparation method thereof, and relates to the field of board structures. The conductive performance of the composite board is improved. According to the specific scheme, the composite board comprises a composite layer, a carbon fiber yarn layer, a conductive layer and a floor. The composite layer is provided with a groove structure; the carbon fiber yarn layer is embedded in the composite layer, and part of the carbon fiber yarn layer is located in the groove structure. The conductive layer and the composite layer are stacked, and the conductive layer covers at least part of the groove structure and is electrically connected with the carbon fiber yarn layer. One side of the conductive layer away from the composite layer is electrically connected with the floor. And the conductive layer is electrically conducted with the carbon fiber yarn layer. And the carbon fiber yarn layer embedded in the composite layer is electrically connected with the floor through the arrangement of the groove structure and the conductive layer. Therefore, charges in the whole carbon fiber yarn layer can flow to the floor through the conductive layer. And the whole carbon fiber yarn layer has an electromagnetic compatibility protection effect. When the composite board is applied to the electronic equipment, the electromagnetic compatibility protection performance of the electronic equipment can be improved.

The invention relates to the technical field of gallium nitride transistors, and discloses a silicon carbide-gallium nitride heterogeneous integrated high-voltage power device structure, which comprises a silicon carbide device consisting of a plurality of parallel MOS (Metal Oxide Semiconductor) cells and a gallium nitride device consisting of two GaN structures, and is characterized in that the gallium nitride device is positioned on the back surface of the silicon carbide device; each MOS cell comprises a semiconductor epitaxial layer, an MOS source electrode, an MOS grid electrode and an MOS dielectric layer covering the surface of the MOS grid electrode; wherein the semiconductor epitaxial layer comprises an N substrate layer and an N diffusion layer from top to bottom. The transverse high electron mobility characteristic of the GaN HEMT and the longitudinal voltage withstanding advantage of the SiC MOSFET are combined, cooperative work of two wide bandgap semiconductors is achieved on a single substrate, the structure effectively utilizes the excellent heat conduction and voltage withstanding performance of the SiC substrate as a common carrier, meanwhile, through the series voltage withstanding design of the device level, the performance of the device level is improved, and the performance of the device level is improved. And the overall breakdown voltage is obviously improved.

The invention provides a calibration method of electron beam measuring equipment and a related product. The calibration method comprises the following steps: acquiring an initial scanning image of a wafer acquired by the electron beam measurement equipment at an initial position in a preset view field; controlling the wafer to move for a preset distance along a preset direction, and acquiring a translation scanning image acquired for the wafer under the condition of keeping the preset field of view unchanged; determining a first position coordinate of each positioning mark in the initial scanning image and a second position coordinate of each positioning mark in the translation scanning image; obtaining a distortion model of the electron beam measurement equipment according to the displacement of the second position coordinates and the first position coordinates of the positioning marks in the preset direction; and calibrating the electron beam measuring equipment by using the distortion model. According to the method, the distortion degree of the scanned image of the electron beam measurement equipment can be reduced, and the measurement precision of the electron beam measurement equipment is improved.

The invention relates to the field of gas sensing, and discloses a two-dimensional Cu-TCPP modified bimetallic MOF composite material and a preparation method and application thereof, a gas sensor and a preparation method and application thereof, the two-dimensional Cu-TCPP modified bimetallic MOF composite material comprises a Zn / Co-MOF material, and the surface of the Zn / Co-MOF material is modified with a Cu-TCPP nanosheet. According to the two-dimensional Cu-TCPP modified bimetallic MOF composite material, the characteristics of large surface area and high electron transmission efficiency of a two-dimensional material and the characteristics of porosity, high specific surface area, chemical tunability and the like of an MOF material are fused, and the catalytic activity of the material is enhanced through introduction of Cu-TCPP, so that the detection sensitivity of target gas is improved; resistance change detection of gas molecules is realized, and the gas molecules are converted into electric signals to be output and used for monitoring characteristic gas of dissolved gas in transformer oil.

The invention discloses an oxide-coated ion-doped sodium ferric sulfate positive electrode material as well as a preparation method and application thereof. The positive electrode material is formed by compounding a sodium ferric sulfate bulk phase material doped with various valence metal cations and anions and coated with carbon similar to a positive temperature coefficient thermosensitive metal oxide. Wherein the metal cations with various valence states are doped on Na or Na / Fe ion sites of the sodium ferric sulfate, the doped anions occupy part of three-dimensional S-O tetrahedron positions, the inorganic carbon in the carbon compound is uniformly distributed in the sodium ferric sulfate bulk phase material, and the organic carbon is uniformly distributed outside the sodium ferric sulfate bulk phase material. The positive electrode plate assembled battery prepared from the positive electrode material has the advantages of high reversible charge-discharge capacity, excellent cycle performance and rate capability and high electron and ion migration rate in a low-temperature environment. The method is low in raw material cost, simple in synthesis method, short in production period and suitable for large-scale continuous production.

The embodiment of the invention provides a composite substrate and a preparation method of the composite substrate, relates to the technical field of semiconductor devices, and is used for solving the technical problem of relatively high bonding interface resistance of a composite substrate formed by bonding a 3C-SiC substrate and a 4H-SiC substrate in related technologies. The composite substrate comprises a 3C-SiC layer and a 4H-SiC layer, the 4H-SiC layer comprises a first surface, and the 3C-SiC layer comprises a second surface; the first surface and / or the second surface comprises a high-concentration doped layer with N-type conductivity, and a bonding interface of the 3C-SiC layer and the 4H-SiC layer is a contact surface between the high-concentration doped layer and the second surface, between the high-concentration doped layer and the first surface or between the high-concentration doped layer and the two high-concentration doped layers. The interface energy band is adjusted through the energy band bending effect of the high-concentration doping layer, the barrier width and height of the bonding interface are reduced, electrons penetrate through the barrier through a tunneling mechanism, the migration efficiency of the electrons on the heterojunction interface is improved, and the interface resistance is reduced.

The invention provides a titanium-based ceramic target material and a preparation method and application thereof.The titanium-based ceramic target material is prepared from, by mass, 96.4 wt%-98.3 wt% of titanium oxide and 1.7 wt%-3.6 wt% of doped oxide, and the doped oxide is prepared from, by mass, 0.8 wt%-1.5 wt% of niobium oxide, 0.5 wt%-1.0 wt% of tantalum oxide, 0.3 wt%-0.8 wt% of tungsten oxide and 0.1 wt%-0.3 wt% of aluminum oxide. According to the method, the high-performance titanium-based ceramic target material is prepared by adopting a normal-pressure sintering method through multi-element synergistic doping and dynamic regulation and control of the sintering atmosphere, the titanium-based thin film prepared by sputtering the titanium-based ceramic target material can form a laminated thin film structure with an indium tin oxide (ITO) thin film, and high conductivity, high visible light transmittance and high electron mobility are achieved; and the actual requirements in the field of silicon-based and perovskite solar cells are met.

The invention relates to the technical field of photocatalysis, in particular to a Ni / Ga bimetal doped g-C3N4 nanotube composite material as well as a preparation method and application thereof. The Ni / Ga bimetal doped g-C3N4 nanotube composite material with the nitrogen vacancy is formed by doping Ni and Ga bimetals into the g-C3N4 nanotube and calcining the g-C3N4 nanotube in the air atmosphere to introduce the nitrogen vacancy. Nitrogen vacancies and double metal doping synergistically improve the efficiency of photocatalytic hydrogen production, because the Ni / Ga double metal doped g-C3N4 nanotube composite material with the nitrogen vacancies has a wider visible light absorption range, a lower carrier recombination rate, a higher electron transfer rate and higher stability, the composite material further has higher hydrogen production efficiency.

The invention discloses a high-magnification ferric sodium pyrophosphate composite material as well as a preparation method and application thereof, and belongs to the technical field of sodium ion battery positive electrode materials. According to the positive electrode material, phosphoric acid and ferric pyrophosphate sodium nano-microspheres grow on multi-walled carbon nanotubes (MCNTs), so that the MCNTs are coated with the phosphoric acid and ferric pyrophosphate sodium nano-microspheres, and a composite material composed of a matrix MCNTS and a phosphoric acid and ferric pyrophosphate sodium microsphere coating layer is formed. The chemical formula of the material is Na4Fe3 (PO4) P2O7 (at) MCNTS. The ultrahigh-rate ferric sodium phosphate pyrophosphate composite material comprises an MCNTS carrier and a coating layer coated on the surface of the MCNTS. According to the pyrophosphate and ferric phosphate sodium nanosphere coated multi-walled carbon nanotube composite material provided by the invention, due to a cross-linked three-dimensional network structure, a sodion deintercalation path is greatly shortened, electrons are transferred among nanospheres at an ultra-fast speed, and aggregation of the nanospheres is also inhibited. Due to ultrahigh electronic and ionic conductivity, the nanospheres show remarkable high capacity, ultrahigh rate capability and super-long cycle performance.

A control circuit adjusts a value of a source supply voltage VSSEL provided to a display area in an electronic display. The control circuit also adjusts a voltage Vreset applied to the display area to cause the display area to emit light more uniformly under various ambient conditions (e.g., temperature) surrounding the display area. Dynamically changing Vreset is employed to make anode charging dynamics independent of temperature. The control circuit adjusts the source supply voltage VSSEL and the voltage Vreset together to compensate display pixel hysteresis effects and display artifacts caused by temperature changes and brightness changes of the display area and collectively produce images. Dynamically tuning the Vreset and the VSSEL voltages also saves power and improves gray level accuracy for the electronic display.

The embodiment of the utility model provides a camera module and electronic equipment, and relates to the technical field of cameras. The camera module comprises an image sensor assembly and a shielding layer. The image sensor assembly includes an image sensor and a first circuit board. The image sensor is provided with a light-sensitive surface and a backlight surface which are oppositely arranged, and the first circuit board is located on the side where the light-sensitive surface or the backlight surface is located and electrically connected with the image sensor. The shielding layer is located on the side where the backlight face is located and attached to at least one part of the image sensor assembly. In the embodiment of the invention, the shielding layer can play a role in electromagnetic shielding, the electromagnetic interference caused by the camera module to other devices of the electronic equipment is reduced, and the performance of the electronic equipment is improved. And the shielding layer is prevented from shielding light.

The invention discloses an electronic equipment component fixing device and electronic equipment, the electronic equipment component fixing device comprises a mounting seat and a plurality of brackets, the brackets are detachably mounted in the mounting seat, the plurality of brackets at least comprise one of a first bracket and a second bracket, and the first bracket comprises a first front frame; the first bracket comprises a first front frame, the second bracket comprises a second front frame, the width of the second front frame is larger than that of the first front frame in the first direction, the first bracket and the second bracket comprise side frames, the two opposite sides of the first front frame are connected with the side frames, and the two opposite sides of the second front frame are connected with the side frames. The first bracket and the second bracket respectively form accommodating spaces with different sizes, and the first bracket and the second bracket are butted and matched with the mounting seat through the side frames, so that the technical problem that the electronic equipment component fixing device in the related technology cannot be compatible with components with different specifications is solved; the technical effect of improving the compatibility of the electronic equipment component fixing device is achieved.

The invention discloses an analog memristor based on a Ga2O3 / TiO2 heterojunction structure and a preparation method of the analog memristor, and belongs to the field of nonvolatile resistive random access memorizers, the preparation method comprises the following steps: under a vacuum condition, depositing a conductive film on a pretreated insulating substrate by adopting a physical vapor deposition method to serve as a bottom electrode; sequentially depositing a Ga2O3 thin film and a TiO2 thin film on the bottom electrode by adopting a magnetron sputtering method, and constructing a Ga2O3 / TiO2 heterojunction as a resistive layer; and depositing a conductive thin film on the surface of the resistive layer by adopting a physical vapor deposition method to serve as a top electrode to obtain the analog memristor based on the Ga2O3 / TiO2 heterojunction structure. A Ga2O3 semiconductor material with a wide forbidden band and high electron mobility and a TiO2 material with a high dielectric constant, stability and reliability are adopted, and the excellent and high-stability heterojunction memristor is prepared through a specific sputtering process. Bionic behaviors such as synaptic plasticity can be realized, and the method has important application potential in the fields of high-density storage, neural network calculation, biological synaptic simulation and the like.

The invention relates to the technical field of batteries, in particular to an electrode composite material and a preparation method and application thereof. The electrode composite material comprises a base material and a coating layer located on at least part of the surface of the base material, the base material comprises etched graphite and carbon nanotubes located on the surface of the etched graphite, and the coating layer comprises a composite layer of cobalt fluoride and amorphous carbon. In the electrode composite material disclosed by the invention, the electronic conductivity of the base material can be improved through the synergistic effect of the etched graphite and the carbon nanotubes; according to the composite layer of cobalt fluoride and amorphous carbon, the intercalation and deintercalation rate of lithium ions can be increased by using the strong solvation ability of cobalt fluoride, and the amorphous carbon material can construct a surface electronic network and can improve the rate capability by cooperating with cobalt fluoride; the electrode composite material disclosed by the invention has high electron and ion conductivity, and the rate capability and the cycle performance can be remarkably improved.

The invention discloses a ternary positive electrode material, a preparation method thereof and an electrochemical device, the ternary positive electrode material provided by the embodiment of the invention is a single-crystal ternary positive electrode material, the particle size span distribution span of the ternary positive electrode material is equal to (D90-D10) / D50, span is 0.8-1.1, and the average circularity R of the ternary positive electrode material is greater than or equal to 70%. The single-crystal ternary positive electrode material has good monodispersity and circularity, on one hand, the compaction density of the ternary positive electrode material can be improved, on the other hand, poor conductivity of a local area can be reduced, the transmission rate of electrons and lithium ions can be effectively improved, and the specific capacity and the cycle life of the ternary positive electrode material can be improved.

Disclosed in the present invention are a hard carbon material and a preparation method therefor and the use thereof, and a battery. The preparation method for the hard carbon material comprises: mixing a solution containing PVC and an aromatic compound under heating conditions until a solvent is completely evaporated to dryness, so as to obtain an xerogel, wherein the mass ratio of the aromatic compound to the PVC is 2-25%; grinding, washing and drying the xerogel, so as to obtain a dehalogenated-PVC precursor; and carbonizing the dehalogenated-PVC precursor, so as to obtain the hard carbon material, wherein the carbonization is performed at a temperature of 700-1200°C for 1-4 h. The hard carbon material prepared in the present invention has relatively high atom economy and high electron conductivity, and has good electrochemical performance when being used for the preparation of a battery.

The invention relates to the technical field of terminals, in particular to a display method, a chip, electronic equipment, a readable medium and a program product. According to the method, in the process of displaying interfaces such as a dial plate, a plurality of interface elements included in the interfaces can be distributed to a first processor and a second processor to execute rendering according to the complexity of a first processing task including a drawing process and a rendering process; and the interface elements which are rendered on the corresponding processors are stored through a frame buffer in the cache region. And after rendering is completed, one processor synthesizes each part of interface elements rendered by the two processors and then displays the synthesized interface elements. Therefore, the performance and endurance of the device can be considered on the double-chip electronic device at the same time, the two or more processors can be coordinated to process drawing and rendering of the interface elements of the to-be-displayed interface in a labor division mode, the rendering capacity of the device is improved, maximum energy conservation and consumption reduction can be achieved, and the endurance capacity of the electronic device is improved.

Provided are a heterocyclic derivative and an organic electroluminescent device thereof, which relates to the field of organic photoelectric materials. The heterocyclic derivative of Formula I has high electron mobility and great hole blocking performance, and thus the organic electroluminescent device prepared by using the heterocyclic derivative as the electron transport region material, especially the hole blocking material, has low drive voltage and high luminous efficiency. The organic electroluminescent device can also include a hole transport region, and the hole transport region, especially the emissive auxiliary layer, contains the triarylamine compound of Formula II. Since the electron transport region and the hole transport region of the device can effectively balance carriers, which reduces the quenching of excitons and improves the recombination probability of carriers, the device shows low drive voltage and high luminous efficiency.

The invention discloses a method for improving size precision and surface quality of Nb521 alloy formed through electron beam selective melting. The method comprises the steps that firstly, a three-dimensional model of the Nb521 alloy is stretched in the height direction, slicing and layering are conducted, each single slicing layer is divided into an inner area and an outer area, and data of each slicing layer are obtained; secondly, spherical Nb521 pre-alloyed powder is added, and data of all cutting layers are imported; 3, after powder spreading, scanning and melting in different areas to form a first single-layer solid sheet layer; and 4, powder spreading and melting processes are repeated. According to the method, through height stretching pre-compensation cooling shrinkage of the Nb521 alloy three-dimensional model, a single cutting layer is divided into a surface area and an internal area, double-concentric-square-shaped contour scanning is conducted on the surface area, snakelike continuous scanning, negative defocusing and corner dynamic adjustment are conducted on the internal area, the forming quality and efficiency are guaranteed, and the method is suitable for large-scale production. And the size precision and the surface quality of the Nb521 alloy part are improved, and the method is suitable for manufacturing Nb521 alloy complex structural parts.

The embodiment of the invention provides a ferroelectric capacitor and a preparation method thereof, a storage array, a memory and electronic equipment, relates to the technical field of semiconductors, and is used for reducing M phases in a ferroelectric layer in the ferroelectric capacitor and improving the reliability of the ferroelectric capacitor. The ferroelectric capacitor includes a first electrode, a second electrode, and a ferroelectric layer between the first electrode and the second electrode. Wherein the first electrode is a polycrystal, the first electrode comprises a first columnar crystal grain, a first included angle exists between the extension direction of the first columnar crystal grain and the first reference plane, and the first included angle is larger than 0 degree or equal to 90 degrees. The ratio of the number of the first columnar crystal grains to the number of all crystal grains in the first electrode is greater than or equal to 50%. The first reference plane is parallel to a portion of the surface of the ferroelectric layer opposite the first columnar grains. A ferroelectric capacitor is applied to an electronic device to improve the performance of the electronic device.