1073 results about "High electron" patented technology

The invention discloses a fan control method and device, equipment, a storage medium and a program product. The method is applied to the electronic equipment, the electronic equipment comprises a plurality of heat dissipation devices, each heat dissipation device comprises a corresponding hardware module and a fan module, parameter data of the hardware module in each heat dissipation device are collected, and the parameter data are used for determining the temperature of the hardware module; determining a rotating speed control strategy of a fan module in each heat dissipation device according to the parameter data; and then according to the running state of the electronic equipment, the rotating speed control strategy is adjusted, and the running state comprises at least one of a starting state, a standby state, a light load state and a heavy load state. According to the application, the parameter data of the hardware module in each heat dissipation device is collected and according to the parameter data, accurate control of the rotating speed of the fan is realized, and the heat dissipation efficiency of the electronic equipment is improved; the rotating speed of the fan is dynamically adjusted according to the running state of the electronic equipment, noise and energy consumption are effectively reduced, and the overall performance of the electronic equipment is enhanced.

The invention discloses an organic compound, a composition, an electronic device and a display panel. The organic compound has a structure as shown in formula (1): (1); the organic compound provided by the invention is an arylamine compound taking dibenzofuran or dibenzothiophene substituted by a heterocyclic group containing a nitrogen atom, an oxygen atom or a sulfur atom as a core structure, and can have a relatively high refractive index; when the organic compound provided by the invention is used in a covering layer of an electronic device, the refractive index of the covering layer can be effectively improved, so that the luminous efficiency of the electronic device is improved, and the electronic device with excellent performance can be realized.

The application relates to the technical field of terminals, and discloses an electronic device and a cover. The electronic device comprises a cover, a display screen assembly and a main body. The cover is used for shielding a gap between the display screen assembly and the main body. The cover comprises a first part and a second part which are connected. The first part covers at least part of the edge of the display screen assembly. The second part extends from the first part towards the main body. The inside of the main body comprises an acoustic cavity, and the cover and / or the main body is provided with an acoustic outlet channel which is connected to the acoustic cavity and the outside of the mobile phone. The acoustic outlet of the acoustic outlet channel has an area greater than 0 in the region of the orthographic projection of the side projection plane. The side projection plane is perpendicular to the plane in which the display screen assembly is located and parallel to the edge of the display screen assembly corresponding to the acoustic outlet channel. The electronic device described above cannot be observed from the front, the acoustic outlet channel and the internal components cannot be observed, the appearance is improved, meanwhile, the size space of the display screen assembly can be increased, and the space utilization rate of the electronic device is improved.

The invention relates to the technical field of gallium nitride transistors, and discloses a silicon carbide-gallium nitride heterogeneous integrated high-voltage power device structure, which comprises a silicon carbide device consisting of a plurality of parallel MOS (Metal Oxide Semiconductor) cells and a gallium nitride device consisting of two GaN structures, and is characterized in that the gallium nitride device is positioned on the back surface of the silicon carbide device; each MOS cell comprises a semiconductor epitaxial layer, an MOS source electrode, an MOS grid electrode and an MOS dielectric layer covering the surface of the MOS grid electrode; wherein the semiconductor epitaxial layer comprises an N substrate layer and an N diffusion layer from top to bottom. The transverse high electron mobility characteristic of the GaN HEMT and the longitudinal voltage withstanding advantage of the SiC MOSFET are combined, cooperative work of two wide bandgap semiconductors is achieved on a single substrate, the structure effectively utilizes the excellent heat conduction and voltage withstanding performance of the SiC substrate as a common carrier, meanwhile, through the series voltage withstanding design of the device level, the performance of the device level is improved, and the performance of the device level is improved. And the overall breakdown voltage is obviously improved.

The invention provides a calibration method of electron beam measuring equipment and a related product. The calibration method comprises the following steps: acquiring an initial scanning image of a wafer acquired by the electron beam measurement equipment at an initial position in a preset view field; controlling the wafer to move for a preset distance along a preset direction, and acquiring a translation scanning image acquired for the wafer under the condition of keeping the preset field of view unchanged; determining a first position coordinate of each positioning mark in the initial scanning image and a second position coordinate of each positioning mark in the translation scanning image; obtaining a distortion model of the electron beam measurement equipment according to the displacement of the second position coordinates and the first position coordinates of the positioning marks in the preset direction; and calibrating the electron beam measuring equipment by using the distortion model. According to the method, the distortion degree of the scanned image of the electron beam measurement equipment can be reduced, and the measurement precision of the electron beam measurement equipment is improved.

The invention discloses an oxide-coated ion-doped sodium ferric sulfate positive electrode material as well as a preparation method and application thereof. The positive electrode material is formed by compounding a sodium ferric sulfate bulk phase material doped with various valence metal cations and anions and coated with carbon similar to a positive temperature coefficient thermosensitive metal oxide. Wherein the metal cations with various valence states are doped on Na or Na / Fe ion sites of the sodium ferric sulfate, the doped anions occupy part of three-dimensional S-O tetrahedron positions, the inorganic carbon in the carbon compound is uniformly distributed in the sodium ferric sulfate bulk phase material, and the organic carbon is uniformly distributed outside the sodium ferric sulfate bulk phase material. The positive electrode plate assembled battery prepared from the positive electrode material has the advantages of high reversible charge-discharge capacity, excellent cycle performance and rate capability and high electron and ion migration rate in a low-temperature environment. The method is low in raw material cost, simple in synthesis method, short in production period and suitable for large-scale continuous production.

The embodiment of the invention provides a composite substrate and a preparation method of the composite substrate, relates to the technical field of semiconductor devices, and is used for solving the technical problem of relatively high bonding interface resistance of a composite substrate formed by bonding a 3C-SiC substrate and a 4H-SiC substrate in related technologies. The composite substrate comprises a 3C-SiC layer and a 4H-SiC layer, the 4H-SiC layer comprises a first surface, and the 3C-SiC layer comprises a second surface; the first surface and / or the second surface comprises a high-concentration doped layer with N-type conductivity, and a bonding interface of the 3C-SiC layer and the 4H-SiC layer is a contact surface between the high-concentration doped layer and the second surface, between the high-concentration doped layer and the first surface or between the high-concentration doped layer and the two high-concentration doped layers. The interface energy band is adjusted through the energy band bending effect of the high-concentration doping layer, the barrier width and height of the bonding interface are reduced, electrons penetrate through the barrier through a tunneling mechanism, the migration efficiency of the electrons on the heterojunction interface is improved, and the interface resistance is reduced.

The invention discloses an electronic equipment component fixing device and electronic equipment, the electronic equipment component fixing device comprises a mounting seat and a plurality of brackets, the brackets are detachably mounted in the mounting seat, the plurality of brackets at least comprise one of a first bracket and a second bracket, and the first bracket comprises a first front frame; the first bracket comprises a first front frame, the second bracket comprises a second front frame, the width of the second front frame is larger than that of the first front frame in the first direction, the first bracket and the second bracket comprise side frames, the two opposite sides of the first front frame are connected with the side frames, and the two opposite sides of the second front frame are connected with the side frames. The first bracket and the second bracket respectively form accommodating spaces with different sizes, and the first bracket and the second bracket are butted and matched with the mounting seat through the side frames, so that the technical problem that the electronic equipment component fixing device in the related technology cannot be compatible with components with different specifications is solved; the technical effect of improving the compatibility of the electronic equipment component fixing device is achieved.

The invention discloses an analog memristor based on a Ga2O3 / TiO2 heterojunction structure and a preparation method of the analog memristor, and belongs to the field of nonvolatile resistive random access memorizers, the preparation method comprises the following steps: under a vacuum condition, depositing a conductive film on a pretreated insulating substrate by adopting a physical vapor deposition method to serve as a bottom electrode; sequentially depositing a Ga2O3 thin film and a TiO2 thin film on the bottom electrode by adopting a magnetron sputtering method, and constructing a Ga2O3 / TiO2 heterojunction as a resistive layer; and depositing a conductive thin film on the surface of the resistive layer by adopting a physical vapor deposition method to serve as a top electrode to obtain the analog memristor based on the Ga2O3 / TiO2 heterojunction structure. A Ga2O3 semiconductor material with a wide forbidden band and high electron mobility and a TiO2 material with a high dielectric constant, stability and reliability are adopted, and the excellent and high-stability heterojunction memristor is prepared through a specific sputtering process. Bionic behaviors such as synaptic plasticity can be realized, and the method has important application potential in the fields of high-density storage, neural network calculation, biological synaptic simulation and the like.

Disclosed in the present invention are a hard carbon material and a preparation method therefor and the use thereof, and a battery. The preparation method for the hard carbon material comprises: mixing a solution containing PVC and an aromatic compound under heating conditions until a solvent is completely evaporated to dryness, so as to obtain an xerogel, wherein the mass ratio of the aromatic compound to the PVC is 2-25%; grinding, washing and drying the xerogel, so as to obtain a dehalogenated-PVC precursor; and carbonizing the dehalogenated-PVC precursor, so as to obtain the hard carbon material, wherein the carbonization is performed at a temperature of 700-1200°C for 1-4 h. The hard carbon material prepared in the present invention has relatively high atom economy and high electron conductivity, and has good electrochemical performance when being used for the preparation of a battery.

The invention discloses a method for improving size precision and surface quality of Nb521 alloy formed through electron beam selective melting. The method comprises the steps that firstly, a three-dimensional model of the Nb521 alloy is stretched in the height direction, slicing and layering are conducted, each single slicing layer is divided into an inner area and an outer area, and data of each slicing layer are obtained; secondly, spherical Nb521 pre-alloyed powder is added, and data of all cutting layers are imported; 3, after powder spreading, scanning and melting in different areas to form a first single-layer solid sheet layer; and 4, powder spreading and melting processes are repeated. According to the method, through height stretching pre-compensation cooling shrinkage of the Nb521 alloy three-dimensional model, a single cutting layer is divided into a surface area and an internal area, double-concentric-square-shaped contour scanning is conducted on the surface area, snakelike continuous scanning, negative defocusing and corner dynamic adjustment are conducted on the internal area, the forming quality and efficiency are guaranteed, and the method is suitable for large-scale production. And the size precision and the surface quality of the Nb521 alloy part are improved, and the method is suitable for manufacturing Nb521 alloy complex structural parts.

The invention belongs to the technical field of anion exchange membrane fuel cells, and discloses a high-stability ruthenium-based hydroxide electrocatalyst used as an anode of an anion exchange membrane fuel cell and a preparation method of the high-stability ruthenium-based hydroxide electrocatalyst. The catalyst is prepared by taking ruthenium as a unique active component, fullerene (C60) as a carbon substrate and polydopamine (PDA) as an additive through argon heat treatment. The preparation method disclosed by the invention is simple and easy to implement, and through the design scheme that C60 with high electron affinity is used as a carrier, the electronic structure of a ruthenium active site is effectively adjusted, and excessive adsorption of a ruthenium-based catalyst to hydroxyl species in a hydrogen oxidation reaction (HOR) process is weakened, so that the ruthenium reaction active site is greatly reserved for hydrogen adsorption, and the hydrogen adsorption efficiency is improved. Therefore, the stability of ruthenium-based electro-catalysis in hydrogen oxidation reaction can be greatly improved.

The invention discloses a method for efficiently generating high-brightness gamma radiation, and belongs to the technical field of radiation. A relativistic electron beam is injected into the porous microstructure foam target material, and high-brightness gamma ray radiation is generated. According to the method, the used device is simple, only the single relativistic electron beam and the porous microstructure foam target material are needed to interact, compared with a traditional uniform-density solid material, the energy conversion efficiency in the interaction process of the electron beam and a substance can be remarkably improved, and the energy conversion efficiency can be remarkably improved through the effective constraint effect of a high-intensity magnetic field. And the problems of low energy conversion rate, low light source brightness, poor radiation directivity, complex device or difficulty in experiment implementation and the like of the existing high-energy gamma ray radiation source are solved.

The IBC solar cell piece comprises a silicon wafer, a plurality of doping layers and a plurality of fine grid lines, the doping layers and the fine grid lines are located on the backlight face of the silicon wafer, the doping layers comprise the first doping layer and the second doping layer, and the doping types of the first doping layer and the second doping layer are opposite. The first doped layers and the second doped layers are parallel and are distributed at intervals in a staggered mode in the width direction, the multiple first doped layers in the length direction are distributed at intervals, the multiple second doped layers in the length direction are distributed at intervals, and the fine grid lines comprise first fine grid lines located on the first doped layers and second fine grid lines located on the second doped layers. The intervals of the first doping layers and the intervals of the second doping layers are distributed in a staggered mode in the length direction. According to the main-grid-free IBC solar cell piece, the back face structure is designed, the electron collection efficiency can be improved through the discontinuous doping layer and the thin grid lines distributed at intervals, the power loss of an assembly is reduced, and meanwhile the short circuit problem caused in the welding process can be avoided.

A liquid cooling apparatus and system for the immersion cooling of electronic devices including in particular servers and other IT hardware nodes having an array of heat generating devices including microprocessors, RAM, motherboards etc having different operational temperatures. The present apparatus and system is adapted for the partitioned liquid cooling of a plurality of heat generating electronic components with at least some of the components being segregated spatially relative to other electronic components for separate cooling by the dielectric liquid. The multi-stage segregated heat transfer to the coolant fluid provides enhanced energy efficiency and operational performance of the electronic devices.

The invention provides a positive electrode material and a preparation method thereof, a positive electrode plate and a secondary battery, and belongs to the field of battery materials, the positive electrode material comprises an inner core and a composite coating layer coating the surface of the inner core; the inner core comprises lithium iron phosphate, and the composite coating layer comprises a carbon material and a metal oxide; wherein the metal oxide comprises at least one of lithium titanate, lithium manganate and lithium cobalt oxide. The carbon material and the metal oxide containing titanium, cobalt and manganese are compounded to serve as the composite coating layer to coat the lithium iron phosphate core, on one hand, the microstructure characteristics of the metal oxide containing titanium, cobalt and manganese are utilized, richer channels are provided for lithium ion diffusion, on the other hand, the high electron conductivity of the carbon material is utilized, and the lithium ion diffusion efficiency is improved. The prepared positive electrode material can simultaneously have relatively high electronic conductivity and lithium ion diffusion rate, and when the positive electrode material is used as a lithium ion battery, the charge-discharge performance and the cycle life of the lithium ion battery are remarkably improved.

The invention relates to the technical field of preparation of positive electrode materials, and discloses a method for preparing a lithium iron phosphate positive electrode material from an atom-doped carbon coating layer, in particular to a method for preparing a lithium iron phosphate positive electrode material from the carbon coating layer on the surface of the lithium iron phosphate positive electrode material containing a plurality of heteroatoms M, and the molecular formula of the heteroatoms M is LiFePO4 / C (at) M. The preparation method comprises the steps of grinding twice and sintering, the structure of the carbon material is adjusted by utilizing the synergistic coupling characteristic of doped atoms, and the high electron mobility and ion mobility of the lithium iron phosphate positive electrode material are enhanced. The prepared positive electrode material has excellent electrochemical performance, and the charge-discharge specific capacity and the rate capability are improved.

The invention provides a coated solid electrolyte material. The coated solid electrolyte material comprises a modified LLMOF electrolyte material and an outer coating layer coating the surface of the modified LLMOF electrolyte material, and the outer coating layer is specifically formed by combining a LiF adhesion area and a carbon adhesion area. According to the multi-structure coated solid electrolyte material provided by the invention, the corrosion degree of a surface carbon source is controlled through process regulation and control, local etching is realized, finally, the aim of synchronously coating the carbon source, LiF and a vacancy layer is fulfilled through high-temperature calcination carbonization treatment, and the multi-structure coated solid electrolyte material has high ion and high electron conductivity. By optimizing the formula and improving the sintering process, a one-step sintering preparation process only using a low-cost F source raw material LiF is also designed, one-step sintering can be carried out under a relatively low-temperature inert atmosphere condition, step-by-step sintering is not needed, the process is greatly simplified, and meanwhile, the problems of serious element volatilization, abnormal grain growth, agglomeration and the like caused by multiple times of sintering are greatly avoided.

The utility model discloses a parallel operation copper bar and system of an electronic load, and the parallel operation copper bar comprises a positive electrode copper bar which is used for connecting the positive electrode power input end of the electronic load; the cathode copper bar is used for connecting a cathode power input end of the electronic load, and the cathode copper bar and the anode copper bar are oppositely arranged at an interval; the insulating plate is arranged between the positive electrode copper bar and the negative electrode copper bar, and the positive electrode copper bar and the negative electrode copper bar are tightly attached to one side face of the insulating plate respectively. According to the invention, the amplitude of current overshoot oscillation can be reduced, and the reliability and safety of the parallel operation system of the electronic load are improved.

The invention relates to the field of power cable materials, in particular to an ultrahigh-voltage cable insulating material, a preparation method thereof and a cable. The ultrahigh-voltage cable insulating material is prepared from the following raw materials in parts by mass: 80 to 100 parts of polyethylene, 1 to 5 parts of a cross-linking agent, 0.5 to 1 part of a compatilizer and 0.1 to 1 part of an organic molecular semiconductor. According to the ultrahigh-voltage cable insulating material, the organic molecule semiconductor with high electron affinity is introduced into the polyethylene matrix, and free electrons are attracted and fixed through strong static electricity of the organic molecule semiconductor, so that injection, migration and accumulation processes of charges in the cable insulating material are blocked; the problem of space charge accumulation of a cable insulating material in a high-voltage environment is solved from the source, and the insulativity and the long-term operation reliability of the cable insulating material are effectively improved.

The invention discloses an electronic paper display panel and a driving method thereof and an electronic paper display device, and mainly relates to the technical field of display, the electronic paper display panel comprises an array substrate, an electrophoretic particle reflecting layer and a common electrode layer, the electrophoretic particle reflecting layer is arranged on the array substrate, and the common electrode layer is arranged on the array substrate. The common electrode layer is arranged on the side, away from the array substrate, of the electrophoretic particle reflecting layer. The electrophoretic particle reflecting layer comprises a first electrophoretic particle and a second electrophoretic particle, the first electrophoretic particle comprises a first light reflecting part and a first light absorbing part, and the first light reflecting part is connected with the first light absorbing part; the second electrophoretic particle comprises a second light reflecting part and a second light absorbing part, and the second light reflecting part is connected with the second light absorbing part; only the first light reflecting part in the first electrophoretic particle has a first polarity, and only the second light absorbing part in the second electrophoretic particle has a second polarity. Through the design, the response speed of the electronic paper display panel is improved.

The invention discloses a rate type lithium iron phosphate positive electrode material, a preparation method and a battery thereof, firstly, iron phosphate is modified by dopamine hydrochloride, the surface activity of the iron phosphate is improved, subsequent doping of cobalt and magnesium is facilitated, meanwhile, excessive growth of crystal grains can be limited in high-temperature sintering, nitrogen and carbon are introduced into lithium iron phosphate, and the rate type lithium iron phosphate positive electrode material is prepared. A carbon-nitrogen coating layer is formed, so that the electronic conductivity is improved; then, isopropyl tri (dioctyl pyrophosphate acyloxy) titanate, cobalt oxide and magnesium oxide are adopted to prepare a doping agent, cobalt and magnesium are uniformly doped into lithium iron phosphate crystal lattices to form bulk phase doping, and cobalt and magnesium co-doping synergistically improves the electronic conductivity and structural stability of the lithium iron phosphate material; finally, a biomass carbon source beta-cyclodextrin is adopted for carbon coating, a uniform carbon layer is formed on the surface of the lithium iron phosphate, and the electrochemical performance of the lithium iron phosphate is further improved; the lithium iron phosphate material prepared by the method also has good electrochemical performance under high magnification.

The invention discloses a photoelectric detector with a multi-layer channel p-GaN / AlGaN / n-GaN structure. The photoelectric detector comprises a substrate, a channel layer and a p-type GaN layer which are sequentially stacked from bottom to top and are symmetrical in structure, the channel layer is formed by alternately stacking a plurality of barrier layers and a plurality of n-type GaN layers, namely n-GaN; on the basis of a single-layer p-GaN / AlGaN / n-GaN structure, a plurality of barrier layer / n-GaN layer structures are introduced and stacked below p-GaN to form a multi-layer structure, larger current is formed in a light field through a multi-layer channel, and meanwhile, due to high electron mobility and high saturation drift speed in GaN, the response speed is high; therefore, compared with a single-layer p-GaN / AlGaN / n-GaN device, the GaN / AlGaN / n-GaN device has higher gain bandwidth product and better ultraviolet detection performance, and can better meet the requirement of ultraviolet detection.

The invention relates to a terahertz wave diagnosis system and method for plasma in an extreme environment. The diagnosis system comprises a terahertz wave transmitting module, a first terahertz feed source, a first cooling cavity, a first high-temperature-resistant focusing lens, a terahertz wave receiving module, a second terahertz feed source, a second cooling cavity, a second high-temperature-resistant focusing lens and a vector network analyzer assembly. According to the terahertz wave diagnosis system, normal-temperature and normal-pressure environments can be created in high-temperature and low-pressure extreme environments, the effect of protecting the terahertz wave module is achieved, interference of strong electromagnetic interference brought by plasmas on processing of received and transmitted signals is avoided, and link loss is effectively reduced; meanwhile, the terahertz wave is higher in frequency, plasma in a higher electron density state can be diagnosed, the focusing lens transmitting antenna and the focusing lens receiving antenna are adopted, and due to the fact that the terahertz wave is shorter in wavelength and smaller in focused focal spot, electron density distribution with higher spatial resolution can be obtained.

The application relates to the technical field of lithium ion batteries, and discloses a silicon-carbon nanotube composite material, which is obtained by dehydration of hydroxylated silicon particles, hydroxylated carbon nanotubes and iminodiacetic acid. The silicon-carbon nanotube composite material provided by the application can anchor the silicon particles on the carbon nanotubes through covalent bond action, can increase the uniformity of dispersion of the carbon nanotubes and the silicon particles, can improve the electron transmission capacity, can play a certain counterforce on the volume expansion force of the silicon particles, can reduce the generation of electrode cracks, can further reduce the consumption of electrolyte, and can improve the cycle stability of the whole electrode. Meanwhile, the preparation method provided by the application does not need a complex operation process, has simple process condition requirements, and is suitable for large-scale production.

The present application relates to the detection method of peroxynitrate in the atmosphere, comprising: the six-way valve is adjusted to the sampling mode, the carrier gas and air inlet are opened, the carrier gas is swept to the chromatographic column and the electron capture detector in turn after passing through the first passage of the six-way valve, and the negative pressure device on the downstream side of the electron capture detector is opened at the same time; the air enters the sampling ring through the second passage of the six-way valve, and the excess air is discharged by using the air pump; the six-way valve is adjusted to the detection mode, the carrier gas enters the sampling ring through the third passage, the air sample in the sampling ring is taken out and brought into the chromatographic column; the PANs in the air sample are separated in the chromatographic column, and then enter the electron capture detector for detection, at the same time, the internal pressure of the electron capture detector is regulated and controlled by the negative pressure device to be stable negative pressure, the peak of the compound to be detected is accelerated, and the sensitivity of the electron capture detector to the detection is improved.

The invention relates to the technical field of electronic component packaging, and discloses a packaging protection film and a preparation method thereof, and electronic equipment, the packaging protection film comprises a cured resin layer and a semi-cured resin layer which are laminated, the elongation of the cured resin layer is 400-800%, and the elongation of the semi-cured resin layer is greater than 400%. The packaging protection film is adopted to form the cured resin layer in the to-be-protected area, so that the coverage area of the cured resin layer can be accurately controlled, the risk that part of the electronic component in the to-be-protected area is exposed outside can be effectively reduced, and the protection effect of the electronic component is effectively improved; in the laminating process, the cured resin layer and the semi-cured resin layer can adaptively extend based on the shape of the to-be-protected surface so as to be attached to the to-be-protected surface in a covering mode, the risk that the packaging protection film is broken in the laminating process can be reduced, and the packaging protection film is suitable for packaging of electronic components.

The utility model provides a kind of electronic atomizer, including main casing, upper atomization subassembly, common cover, lower atomization subassembly and electric control component are sequentially arranged from top to bottom in main casing, common cover is provided with transfer port, lower atomization subassembly is provided with first passage and second passage, first passage or second passage is provided with lower atomization core, the upper atomization passage of upper atomization subassembly is communicated with the one end of first passage and second passage by transfer port, the bottom of main casing is connected with bottom cover, the other end of first passage and second passage is communicated with outside air by bottom cover, the electric lead of upper atomization core in upper atomization passage is connected to the electric control component on lower end of lower atomization subassembly by first passage or second passage.For the utility model, by increasing a passage in lower atomization subassembly, the wire routing of upper atomization subassembly can reduce the complexity of connection between upper atomization subassembly, lower atomization subassembly and main casing, thereby improve the overall assembly efficiency of electronic atomizer.

The application relates to a multi-axis mechanical arm-based electrostatic protection test system, and relates to the field of electrostatic discharge test, which comprises a workbench, a fixing device, a discharge device, a grabbing device, a detection device and a gun head replacing device; the grabbing device moves the electronic equipment to the fixing device, and the fixing device clamps the electronic equipment; the detection device is used for detecting the electronic equipment; the discharge device comprises an electrostatic gun driving assembly and an electrostatic gun, the electrostatic gun driving assembly drives the electrostatic gun to move, and the electrostatic gun moves to the position of the electronic equipment to discharge; the gun head replacing device comprises a replacing support frame, a replacing driving piece and a plurality of gun head placing seats; when the electrostatic gun abuts against the inner wall of the gun head placing seat, the replacing driving piece drives the gun head placing seat to rotate, so that the gun head of the electrostatic gun is taken off or installed. The application has the effect of improving the detection efficiency of the electronic equipment.

The application discloses a kind of gold nanoparticle loaded oxygen-doped ultrathin porous boron nitride film electrode and preparation method thereof, the preparation method includes the following steps: according to mass ratio 1:3-6:0.25-0.35, boric acid, urea, oxalic acid is prepared oxygen-doped ultrathin porous boron nitride, then gold nanoparticle is loaded oxygen-doped ultrathin porous boron nitride and coated on conductive substrate to form film electrode.The oxygen-doped ultrathin porous boron nitride film electrode loaded with gold nanoparticles prepared by the application has the advantages of large specific surface area, high electron-hole separation efficiency, fast electron transfer rate, etc., is a new type of film electrode with excellent photoelectric performance, meets the actual production demand, and has wide application prospect in photoelectrochemical field.The preparation method also has the advantages of simple process, easy operation, high preparation efficiency and low cost, and is suitable for large-scale preparation, which is beneficial to industrial application.