548 results about "Anodic oxide" patented technology

The invention provides an Al alloy film for use as an electrode of a semiconductor device and also provides an Al alloy sputtering target used to produce such an Al alloy film wherein the Al alloy film has not only a low resistivity equal to or less than 5 mu OMEGA cm and a high hillock resistance (property of hillock suppression) but also a high dielectric strength when it is anodized into an anodic oxide film and wherein the Al alloy film has a composition such that the Ni content is equal to or greater than 0.3 at % and the Y content is equal to or greater than 0.3 at % and such that 0.22 CNi+0.74 CY<1.6 at % where CNi denotes the Ni content (at %) and CY denotes the Y content (at %) and further wherein, in order to deposit the Al alloy film by sputtering, a spray forming Al alloy target containing Ni and Y is used.

In a thin-film insulated gate type field effect transistor having a metal gate in which the surface of the gate electrode is subjected to anodic oxidation, a silicon nitride film is provided so as to be interposed between the gate electrode and the gate insulating film to prevent invasion of movable ions into a channel, and also to prevent the breakdown of the gate insulating film due to a potential difference between the gate electrode and the channel region. By coating a specific portion of the gate electrode with metal material such as chrome or the like for the anodic oxidation, and then removing only the metal material such as chrome or the like together with the anodic oxide of the metal material such as chrome or the like, an exposed portion of metal gate (e.g. aluminum) is formed, and an upper wiring is connected to the exposed portion. Further, an aluminum oxide or silicon nitride is formed as an etching stopper between the gate electrode and the gate insulating film or between the substrate and the layer on the substrate, so that the over-etching can be prevented and the flatness of the element can be improved. In addition, a contact is formed in no consideration of the concept "contact hole".

An apparatus, system, and method are provided for a vertical two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical nanotube device can include a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material. Further, the vertical nanotube device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed between the first material and the second material. The first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column. The second material fills the first distal end of the column and extends to the second distal end of the column within the first material. Both the first material and the second material are exposed at the first distal end of the column.

The present invention provides a method of manufacturing a nano-array electrode with a controlled nano-structure by filling an electrode material into the fine pores of an anodic-oxide porous alumina film obtained by anodically oxidizing aluminum in electrolyte, or by filling a material into the fine pores of an anodic-oxide porous alumina film obtained by anodically oxidizing aluminum in electrolyte and then filling an electrode material into the spaces defined by the nano-array formed by removing the anodic-oxide porous alumina film, or by filling repeatedly an electrode material in the fine pores of the anodic-oxide porous alumina film to fill a plurality of electrode materials. A high-performance, high-efficiency photoelectric converting device comprising a nano-array electrode manufactured by the method is also disclosed.

A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insulating films used in each circuit of an electro-optical device, typically an IPS method LCD, in particular for the surface of a common electrode formed on a resin film. The amount of formation of the extra anodic oxide film can be reduced by covering with an anodic oxide film, and a liquid crystal display device with high reliability and having an electrode with superior adhesion can be manufactured.

Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.

A lithographic printing plate precursor is disclosed, comprising a metal support having formed thereon an anodic oxide film, and an image-forming layer containing a light-to-heat converting agent, or a light-sensitive layer capable of image-forming with infrared laser exposure provided in this order from the support.

A base for a decorative layer is provided comprising a first material capable of forming an anodic oxide and a second capable of forming an interference metal oxide formed on the first material. The material capable of forming an anodic oxide layer may comprise a barrier layer formed on a substrate. A decorative layer is formed by anodic oxidation of the layer comprising a material capable of forming an interference metal oxide to form an oxide layer formed on the material capable of forming an interference metal oxide, wherein the oxide layer is configured to have a thickness suitable to cause interference of incident light.

The invention provides a metal salt-free sealing agent for an aluminum alloy anodic oxide film, belonging to the technical field of aluminum alloy anodic oxide film post treatment. The sealing agent of the invention is prepared by water solution composed of 1.0-10g/L of a hydration accelerator, 0.01-2g/L of a wetting agent, 0.01-3g/L of an ash inhibitor and 1-15g/L of a pH buffering agent, wherein the pH of workpiece fluid is 5.5-6.5, the operating temperature is 70-90 DEG C, and the sealing speed is 1.0-2.0min/um. The metal salt-free sealing agent creatively adopts organic compounds which are easily subject to biodegradation, does not contain any metal ions of nickel, cobalt, magnesium, calcium, lithium and the like as well as fluorinions, and obtains satisfactory sealing effect of the nano-pores of the aluminum alloy anodic oxide film by virtue of the scientific and coordinated component formula of the water solution; the aluminum alloy anodic oxide film obtained by seal treatment through the sealing agent has the advantages of good corrosion resistance, capability of meeting the requirements of GB 14952.1-94, good light-protection and color-protection properties of a film layer, no ash and pruina, no water stain after drying as well as light flowing color and small color difference change in case of sealing the organic dyeing film; and the metal salt-free sealing agent is widely applicable to sealing treatment of an original-color anodic oxide film, an electrolytic coloring anodic oxide film, a hard oxide film and a dyeing anodic oxide film.

The invention belongs to the technical field of alloy surface treatment, and particularly relates to a mixed acid anodizing and hole sealing method of a magnesium-containing high-silicon-content wrought aluminum alloy surface, which comprises the following steps that: after a magnesium-containing high-silicon-content wrought aluminum alloy workpiece with the silicon content of up to 10-15wt% is pre-treated, a mixed acid liquid of 150-180g/L of H2SO4 and 5-15g/L of organic acid is used as an electrolytic liquid, the magnesium-containing high-silicon-content wrought aluminum alloy workpiece is subjected to DC (direct current) anodic oxidation for 20-25min at room temperature at the current density of 1.2-1.8A/dm<2>, and then is subjected to boiling water sealing, cold sealing, nickel acetate sealing or stearic acid hole sealing. In the acid anodizing and hole sealing method, a layer of anodic oxide film is prepared on the surface of magnesium-containing high-silicon-content wrought aluminum alloy by controlling anodizing process parameters and hole sealing process conditions, thereby improving the corrosion resistance of the surface of the magnesium-containing high-silicon-content wrought aluminum alloy.

A valve timing control apparatus for an internal combustion engine, includes a housing body, a sealing plate, a vane rotor, and a sealing ring. The housing body includes an opening at an axial end which is closed by the sealing plate. The sealing ring is disposed between the housing body and the sealing plate. The housing body is formed of an aluminum-based metal material and anodized, wherein the housing body includes a base layer and an anodic oxide coating film layer. The sealing ring abuts on the base layer of the housing body at the axial end.

Disclosed herein is an electronic component-embedded printed circuit board, including: a metal substrate including an anodic oxide film formed over the entire surface thereof; two electronic components disposed in a cavity formed in the metal substrate in two stages; an insulation layer formed on both sides of the metal substrate to bury the electronic components disposed in the cavity; and circuit layers including vias connected with connecting terminals of the electronic components and formed on the exposed surfaces of the insulation layer. The electronic component-embedded printed circuit board is advantageous in that its radiation performance of radiating the heat generated from an electronic component can be improved, and its production cost can be reduced, because a metal substrate is used instead of a conventional insulating material.

The invention relates to a process for anodizing an aluminum-alloy substrate. The process comprises the following steps of: (S1) degreasing; (S2) washing for the first time; (S3) washing by an alkali; (S4) washing for the second time; (S5) polishing; (S6) washing for the third time; (S7) anodizing; (S8) washing for the fourth time; (S9) carrying out electrolytic coloring; (S10) washing for the fifth time; (S11) sealing holes; (S12) washing for the sixth time to finally obtain a dense anodic oxide film. The whole anodizing process is carried out in the environment of normal temperature, less energy is consumed, the sulfuric acid used for anodizing can be reused for degreasing, the utilization rate of raw materials is high, the production cost is low, the holes are sealed after carrying out the anodizing reaction, the anodizing film can effectively protect the aluminum and the aluminum-alloy, the surface of the anodizing film has no honeycomb-like porous structure, is highly smooth and can be kept to be smooth for a long time.

An object of the present invention is to obtain an aluminum or aluminum alloy member having a uniform and dense anodic oxide film having sufficient corrosion and impact resistances. Provided is an anodic oxide film which has been formed on the surface of aluminum or aluminum alloy, the film comprising cells which have grown in random directions relative to the surface of the aluminum or aluminum alloy and thus have no orientation.

A process for producing high stability crystalline anodic aluminum oxide includes anodizing an anodic foil, hydrating the foil, and forming a barrier oxide layer on the foil. Anodizing the anodic foil produces nano-porous amorphous oxides which can then be converted to a crystalline precursor material by hydrating the foil. Next, an oxide layer formation step is utilized to form a barrier oxide layer on the surface of the anodized and hydrated foil. The resulting anodic oxides have very low levels of defects, voids and tensile stresses and have rise times as low as about 1 second to about 3 seconds after exposure of the formed samples to boiling water for 2 hours.

The invention relates to a method of preparing a composite ceramic film through micro-arc oxidation and composite deposition, is characterized in that the method includes the following steps: firstly, the workpiece is used as the anode; secondly, other particulates are added to the normal micro-arc oxidation electrolyte; and thirdly a composite deposition is realized while the micro-arc oxidation is conducted. The invention has the advantages that the method changes the history that a composite deposition fails to be conducted for the anodic oxide film, and through the technique, particulates of various types can be added to the electrolyte to change the surface property of the material, wearing resistance, corrosion resistance as well as other special performances are improved, and the application range of the valve metal is enlarged.

The present invention provides an anodic oxide film which is able to maintain a high corrosion resistance, and a method for manufacturing the anodic oxide film. The method for manufacturing the anodic oxide film comprises the steps of: forming an anodic oxide film on a surface of an aluminum or aluminum alloy material, treating a surface of the anodic oxide film by using a lithium ion-containing sealing treatment liquid, and heating the sealing-treated anodic oxide film.

A method and equipment for quickly preparing an anodized film on an aluminum alloy product, characterized in that: the aluminum alloy product is suspended on the upper part of the casing, the aluminum alloy product is used as the anode, and 15-30% sulfuric acid is used as the electrolyte, The electrolyte is sprayed from multiple nozzles on the pipelines on both sides of the anode, and is continuously sprayed onto the anode after passing through the auxiliary cathode to form an anodized film; the voltage between the anode and the auxiliary cathode is 20-30V, and the anode The upper current density is 3-5A/dm2, and the electrolyte temperature is 20-30°C. Compared with the prior art, the present invention has the following outstanding advantages: 1) the anodic oxide film forming speed is 1.0-2.2 μm per minute; 2) the anodic oxide film thickness is 1-4 μm, and its corrosion resistance is better than that of chemical oxide film; 3) The anodic oxidation current density is 3-5A/dm2, which is increased by 3-5 times, which can meet the production requirements for the rapid formation of anodic oxidation film before coating of aluminum alloy products.