44 results about "Nanodevice" patented technology

The present invention is based on a nanodevice comprising a nanoparticle comprising a therapeutic agent, a molecular drill comprising a compound with catalytic activity, and a self-propulsion system. The molecular drill in combination with the self-propulsion system allows breaking the matrix of biofilms formed by infectious microorganisms with high efficiency and the molecular drill, in turn, allows the therapeutic agent to be released from the nanoparticle under specific conditions, preferably in the acidic environment of an infection. The invention relates to the nanodevice, to the nanodevice used in the treatment of an infection caused by biofilms, and to the use of the nanodevice to disinfect samples in vitro or inert materials ex vivo.

This invention discloses a method for controlling the thermal relaxation path of superconducting nanostructures and its application. This method utilizes a van der Waals integration strategy to sequentially fabricate a molybdenum disulfide layer on a silicon / silicon oxide substrate using chemical solution deposition and a niobium nitride superconducting layer using magnetron sputtering, constructing a niobium nitride / molybdenum disulfide heterostructure with intrinsic anisotropic thermal conductivity. Superconducting nanodevices with specific geometric configurations are designed for this heterostructure. Leveraging the ultra-high in-plane thermal conductivity of molybdenum disulfide and its suppressed out-of-plane heat transfer characteristics, the method achieves directional control of the internal thermal relaxation path of the superconducting nanostructure, verifying its dual advantages of optimizing thermal management and enhancing superconducting performance. The control method of this invention is mature and controllable, effectively transforming disordered thermal relaxation into directional heat transfer, significantly improving the thermal stability and integration density of superconducting devices, and providing a core solution for the thermal management of nanocircuits in fields such as superconducting quantum computing and high-sensitivity quantum detection.

According to embodiments of the present invention, a semiconductor device includes a plurality of nanodevices (ND1, ND2) including a plurality of upper transistors and a plurality of lower transistors. The plurality of nanodevices includes upper active regions (135, 140, 145) and lower active regions (120, 125) that are offset from each other across the plurality of upper transistors and the plurality of lower transistors. A first front-side gate cut dielectric pillar (190, 195) is adjacent to and parallel with a first nanodevice of the plurality of nanodevices along an x-axis. A backside surface of the first front-side gate cut dielectric pillar extends a first width along a y-axis. A first backside dielectric filler (240, 245) is in direct contact with the backside surface of the first front-side gate cut dielectric pillar. A frontside surface of the first backside dielectric filler extends a second width along the y-axis. The second width is greater than the first width.

This invention belongs to the field of advanced manufacturing technology and relates to an electro-spraying method for inducing jets with pre-printed functional layers. Based on electrohydrodynamic effects, a jet is ejected to pre-print complex micro / nano functional structure patterns on a substrate. Then, under the action of an electric field, the jet size and deposition position are induced. Dual nozzles work together to rapidly achieve the same shape as the pre-printed functional layer. The pre-printed functional layer fully adheres to and solidifies with subsequent nanoscale continuous jets, forming a composite micro / nano functional structure. This electro-spraying method uses a pre-printed functional layer to change the distribution of the electric field on the substrate, ensuring the accuracy of the jet deposition position and reducing dimensional errors in the composite micro / nano functional structure process. It has advantages such as low equipment cost, simple process, and short processing cycle, optimizing the micro / nano functional structure and improving the performance and lifespan of nanodevices.

A capacitor at nanometer level and a resulting nanodevice such as a sensor are provided. The nanodevice includes a substrate, and a first 2D material layer disposed over the substrate and comprising a 2D material and being electrically conductive. The nanodevice further includes a polymeric nanoporous dielectric layer (NDL) disposed on the first 2D material layer. The polymeric NDL comprises a polymer having a crystalline structure and having lamellae substantially normal to a plane of the first 2D material. A conductive material layer is disposed on the polymeric NDL. The conductive material layer comprises a second 2D material layer or comprises a different electrically conductive material. The first 2D material, the polymeric NDL, and the conductive material layer are configured to provide a capacitor structure at a nanometer level. A method of making the capacitor or the nanodevice, and a method of using the same are also provided.

According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The first nanodevice includes a first source / drain contact. The second nanodevice includes a second source / drain contact. The second nanodevice is located adjacent to and parallel to the first nanodevice. A power bar is located between the first nanodevice and the second nanodevice. The power bar is connected to the second source / drain contact. A top surface of the power bar and the second source / drain contact are substantially in a same plane. The top surface of the power bar and the second source / drain contact are substantially a same height.

Embodiments include a nanoFET device and method for forming the same, the nanoFET having channel regions which have been thinned during a gate replacement process to remove etching residue. In some embodiments, the channel regions become dog bone shaped. In some embodiments, the ends of the channel regions have vertical protrusions or horns resulting from a previous trimming process which is performed prior to depositing sidewall spacers.

The application relates to a method for regulating the thermal conductivity of a nanometer semiconductor interface in contact and non-contact states, which comprises the following steps: (1) establishing a molecular dynamics thermal transport model composed of a hot region A and a cold region B; (2) performing molecular dynamics simulation and data processing: comparing the interface thermal conductivities under different twist angles in the contact state and the non-contact state to determine the dependence of the interface thermal conductivity on the twist angle; in the contact state, comparing the overlapping areas of the phonon state density at the contact interface under different twist angles to determine the influence of the overlapping area of the phonon state density on the thermal transport of different interface twist angles; in the non-contact state, comparing the force constants of the interface interaction potential and the LJ potential under different twist angles to determine the influence of the force constant on the thermal transport of different interface twist angles. The application realizes effective regulation of the ITC by regulating the twist angle, the normal load and the potential well depth, and provides an important basis for the thermal management of nanometer devices.

The application discloses an intelligent response type DNA nano device and a construction method and application thereof, and belongs to the field of DNA nanotechnology; the intelligent response type DNA nano device comprises a plurality of different DNA tetrahedron basic units and extension chains and miRNA response chains arranged on the DNA tetrahedron basic units; wherein the DNA tetrahedron basic units are connected by base complementary pairing between the extension chains and the miRNA response chains to form a multimer structure; the miRNA response chain comprises a base sequence capable of specific complementary pairing with a target miRNA to be detected, and the extension chain and the miRNA response chain are separated, so that specific configuration transformation of the nano device is induced. Through programmable assembly of the DNA tetrahedron and miRNA-induced configuration dynamic response, high specificity, high sensitivity, multi-channel parallel detection of a plurality of miRNAs are realized, and problems such as insufficient specificity, low sensitivity and poor targeting of a traditional miRNA detection method are overcome, so that the application has a wide application prospect in the fields of biomedical research and clinical diagnosis.

A method includes using a first procedure of discretizing a user specified nano-device structure for at least one quantum method with open boundary conditions. Additionally, the first procedure includes solving the at least one quantum method with open boundary conditions, thereby having a solution of the at least one quantum method with open boundary conditions. Moreover, the first procedure includes extracting a parameter out of the solution of the at least one quantum method with open boundary conditions. Furthermore, the first procedure includes discretizing at least one quantum method with closed boundary conditions to the user-specified nano-device structure using the parameter. Next, the first procedure includes solving the at least one quantum method with closed boundary conditions to the user-specified nano-device structure using the parameter. Further, the first procedure includes extracting the device behavior of the user-specified nano-device structure. The first procedure is iterated until a condition is satisfied.

The application belongs to the technical field of biomedicine, and relates to a mitochondrion-targeted nano device and a preparation method and application thereof, the nano device comprising a cascade-activated photodynamic molecular beacon and a mitochondrion-targeted delivery carrier, the cascade-activated photodynamic molecular beacon comprising an APE1 cleavage site and a microRNA recognition region. The cascade-activated photodynamic molecular beacon and the mitochondrion-targeted delivery carrier are self-assembled into a complex through electrostatic adsorption, and cascade activation and signal amplification are realized through the dual response of miR-146a / APE1 which is highly expressed in mitochondria of tumor cells. The application triggers precise and controllable cell pyroptosis through tumor-specific signals, reverses the immune-inhibitory microenvironment, converts the 'cold tumor' into a 'hot tumor', significantly improves the effect of cancer immunotherapy, has good biocompatibility and tumor selectivity, and provides a new strategy and tool for precise treatment of cancer.

The invention belongs to the field of functional polymer materials, and particularly relates to a preparation method of a Janus protein nano bowl. The invention develops a novel method capable of overcoming the difficulty of protein assembly and realizing controllable synthesis of the biodegradable protein-based Janus nano bowl, not only has important scientific innovation value, but also opens up a brand new way for construction of a next-generation high-performance biomedical nano device.

The application provides a method for preparing a double-faced Janus nanomotor based on polyacrylic acid (PAA) constructed eccentric structure, and belongs to the field of nanodevices.The method comprises the following steps: preparing an eccentric structure by adjusting electrostatic adsorption and coordination bonding between spherical nanoparticles and PAA; and based on the eccentric structure, performing asymmetric modification on the surface of the spherical nanoparticles.The method has the advantages of simple preparation process, mild reaction condition and ability to realize macro-preparation, and helps to accelerate the industrialization process of the nanomotor, and the method can be expanded to various nanomaterial systems, thereby providing a new idea for the preparation of the double-faced Janus nanomotor.

The application provides a photothermal driving bowl-shaped polydopamine nanomotor and a preparation method thereof, and belongs to the technical field of micro-nano devices, wherein the photothermal driving bowl-shaped polydopamine nanomotor comprises a hollow bowl-shaped structure constructed by polydopamine, and the hollow bowl-shaped structure is obtained by removing polyacrylic acid nanoparticles after polydopamine is polymerized on one side of the polyacrylic acid nanoparticles to form a single-sided asymmetric structure. The photothermal driving bowl-shaped polydopamine nanomotor provided by the application has strong driving capacity, fast movement speed, and an easy-to-functionalize surface, and the preparation method is simple and can be used for macro preparation, so that the photothermal driving bowl-shaped polydopamine nanomotor has a wide application prospect in the fields of environmental governance, micro-nano processing and biological medicine.

Described herein is a novel nanostructured nucleic acid platform that uniquely integrates the advantages of disulfide moieties for enhanced cytoplasm uptake of DNA or RNA nanostructures ("DNA origami") that may further comprise a therapeutic agent and a targeting moiety. The targeting moiety may be an affinity, in particular a Her2 affinity. The disulfide moieties may be formed from sulfide modified oligonucleotides designed to target enhanced cytoplasm uptake.

A microelectronic structure including a first nano device that includes a plurality of first transistors and a second nano device that includes a plurality of second transistors. The first nano device and the second nano device are parallel to each other. A double diffusion break that extends across the first nano device and the second nano device. A back-end-of-the-line (BEOL) layer located on a frontside of the first nano device and the second nano device. A backside interconnect located on a backside of the first nano device and the second nano device and the BEOL layer is connected to the backside interconnect through the double diffusion break.

According to the embodiment of the present invention, a semiconductor device comprises a first nanodevice including a plurality of first transistors. The first nanodevice includes a first placeholder. A backside interlayer dielectric (BILD) layer is in direct contact with a first portion of sidewalls of the first placeholder. The BILD layer is comprised of a first dielectric material. A backside thermal dissipation dielectric is in direct contact with a backside surface of the BILD layer. The backside thermal dissipation dielectric is comprised of a second dielectric material.

Disclosed herein are DNA origami nanostmcture that can be functionalized for personalized and targeted drug delivery. The disclosed nanostructures enter cells through the endolysosomal pathway and circumvent drug resistance mechanisms in target cells. The disclosed nanostructures can be loaded small molecule drugs (e.g. anthracyclines, anti-metabolites) and nucleic acids (e.g. antisense oligonucleotides, siRNA, miRNA) with targeting and / or therapeutic antibodies against tumor-specific antigens (e.g. anti-CD33, anti-CD20) that can be modified to treat to a wide range of cancers and ultimately tailored to specific patients' needs for precision medicine.

The invention relates to the technical field of nano material preparation, and particularly discloses a substrate growth pulling method of an ultra-long few-walled carbon nanotube array. The method comprises the following steps: firstly, pretreating a substrate, loading a zinc-based MOF derivative catalyst and forming a polymer transition layer; then in a reaction environment capable of providing an alternating magnetic field, a gradient electric field, a near-infrared light thermal field and layered gas flow, heating and introducing a carbon source gas in a pulse manner to grow the array, and meanwhile, carrying out on-line monitoring and real-time closed-loop regulation on growth parameters by utilizing a laser Raman spectrum; after the array grows to a preset height, staged gradient stress release lifting is executed, and layered airflow is used for assisting in stripping; and finally, removing the residual catalyst in an oxidizing atmosphere. The carbon nanotube array can be used in the fields of nano devices, composite material reinforcement and the like, and has the advantages of excellent directionality, low defect rate and strong structural integrity. The preparation method provided by the invention can be used for efficiently preparing the high-performance ultra-long few-walled carbon nanotube array.

A semiconductor device including a first nanodevice is located on a substrate, where the first nanodevice includes at least one channel. A first source / drain connected to the first nanodevice. A second nanodevice located on the substrate, where the second nanodevice includes at least one channel and a second source / drain connected to the second nanodevice. A first contact located above the first source / drain. A second contact located above the second source / drain. A contact cap located on top of the first contact and the second contact, where the contact cap has a first leg that extends downwards between the first contact and the second contact. The first leg of the contact cap is in contact with a first sidewall of the first contact, and a first sidewall of the second contact.

A method including forming an oxide layer on a first substrate and forming a second substrate on the oxide layer. Doping a first section of the second substrate while not doping a second section of the second substrate. Forming a first nano device on the second section of the second substrate and forming a second nano device on first section of the second substrate. Flipping the first substrate over to allow for backside processing of the substrate and forming at least one backside contact connected to the first nano device while backside contacts are not formed or connected to the second nano device.

This invention discloses a magnetic absorption device for clinical circuits, including a support base. A winding base is fixedly installed at the right end of the support base, and an adjusting cylinder is rotatably connected to the right end of the winding base. A circuit body is wound on the circumferential surface of the winding base and the left half of the circumferential surface of the adjusting cylinder. A threaded rod is fixedly installed at the right end of the winding base. A sliding groove is formed through the circumferential surface of the adjusting cylinder, and an axial clamping member is slidably connected through the groove. A radial clamping member is provided at the left end of the axial clamping member. First, the left end of the circuit body is engaged with a C-shaped buckle. Then, the circuit body is wound around the outside of the inner liner tube. The pressure ring is pushed to the right, and the circuit body is continued to be wound. After releasing the pressure ring, the pressure ring is pressed tightly against the right side of the circuit body. The threaded sliding column is pushed to slide in the arc-shaped groove, so that the clamping arm clamps the outside of the circuit body. This achieves the purpose of tightly winding the circuit body onto the winding base and the adjusting cylinder.

The application discloses a kind of three-dimensional gray structure based on low-voltage ice glue electron beam exposure and the manufacturing method of three-dimensional micro-nano structure, comprising: depositing an ice layer on processing surface;Then using low-energy electron beam layer-by-layer exposure, remove the ice layer of each layer specific part, finally form three-dimensional gray ice sculpture structure with specific gray pattern;Optionally, three-dimensional ice sculpture structure is deposited material using physical vapor deposition, form three-dimensional micro-nano structure;The ice layer is water ice;The low-voltage electron beam energy is lower than 5keV.The application uses the characteristics of iEBL and low-energy exposure in water ice, not only can obtain three-dimensional ice sculpture structure without support structure, but also can successfully convert gray ice sculpture into high-purity three-dimensional metal structure.This breakthrough provides potential for using water ice resist to improve nanodevice manufacturing, and establishes the key technology position of iEBL in constructing fine, pollution-free three-dimensional metal nanostructure.

The application discloses a quantum transport-thermal transport-thermal stress coupling fast simulation method in a three-dimensional nano device. By solving the quantum transport equation, the heat conduction equation and the solid mechanics balance equation in the coupling mode space, the three-dimensional nano semiconductor device is simulated fast, and the calculation amount of solving the three-dimensional quantum transport equation is reduced. The method comprises the following steps: (1) using the non-equilibrium Green function method, solving the three-dimensional quantum transport equation in the coupling mode space while considering the thermal stress and the phonon scattering effect; (2) using the current density spectrum to calculate the heat source distribution and the current respectively; (3) based on the numerical method and the heat source distribution, solving the heat conduction equation and the solid mechanics balance equation to obtain the temperature distribution and the thermal stress distribution; (4) converting the thermal stress to the mode space, and substituting the temperature distribution and the thermal stress distribution into the quantum transport equation, and repeating steps (1)-(4) until convergence. The application provides a simulation method for the design and optimization of the three-dimensional nano semiconductor device.

A nanodevice provides for electric-field control of magnon-QSD interactions. The nanodevice includes a ferroelectric substrate, a ferromagnetic material disposed over the ferroelectric substrate, and a nanodiamond including an ensemble of nitrogen-vacancy (NV) spins, each NV magnetically interfacing with the ferromagnetic material. An electric field is measured by applying a voltage across the ferroelectric substrate and the ferromagnetic material, changing a magnon excitation spectrum of the ferromagnetic material with respect to an electron spin resonance frequency of the ensemble of NV spins, and measuring a relaxation rate of the ensemble of NV spins.

The invention relates to the technical field of biological medicine, in particular to an inflammatory tissue targeting purine response intelligent DNA nano device and a preparation method and application thereof. The DNA nanotechnology is utilized to construct a nano device with purine responsiveness, purine metabolic enzyme is loaded, and the nano device is anchored on the surface of a mononuclear cell with inflammatory tropism, so that the injured organ targeting property of the mononuclear cell is improved, and the inflammatory disease treatment effect is enhanced.

The invention provides a bioactive nanometer device and a preparation method and application thereof, the bioactive nanometer device comprises mBSG-NH2 and a nucleic acid substance loaded on the mBSG-NH2, and the mBSG-NH2 is nanometer mesoporous borosilicate bioactive glass with the surface modified with-NH2. According to the invention, the degradability of the nucleic acid delivery carrier and the protection effect on loading, enzymolysis / thermal inactivation and the like of nucleic acid substances can be improved, and meanwhile, the transmembrane delivery and intracellular lysosome escape performance of the nucleic acid substances can be improved.

Mixed-dimensional heterostructure nano-devices with multi-functionality for use in semiconductors. Specifically, a gate-tunable and anti-ambipolar phototransistor is devised based on 1D p-type GaAsSb nanowire / 2D n-type MoS2 nanoflake mixed-dimensional van der Waals (vdW) heterojunctions. Methods of making the mixed-dimensional heterostructure nano-devices with multi-functionality, gate-tunability and anti-ambipolar phototransistor.

A novel cyclic etching method has been developed for non-destructive and selective isotropic etching using mist / vapor / plasma at low temperatures, i.e., wet-like atomic layer etching (ALE), or wet-like (plasma) ALE, or nano-mist (plasma) ALE, or non-destructive and selective isotropic etching using mist / vapor / plasma. The method can minimize damage due to sputtering effects in plasma ALE, high temperature processing during volatilization in thermal ALE, and nanostructure damage in wet ALE. The modified layer after reaction with the mist or plasma may be removed by dissolving it in a highly volatile mist stream. Presented herein is a phase (i.e., a vaporous gas phase or a nanomist phase) having intermediate properties between a vaporous liquid phase and a gas phase for nanodevice applications, which phase can maintain the wet properties of the liquid phase at a minimum mist size. By utilizing the Leidenfrost point effect, the sample surface can be modified and / or etched by floating nanomist assisted vapor.

The application belongs to the field of advanced manufacturing technology, and relates to an electro-spraying device for pre-printing a functional layer and inducing a jet flow, which comprises three parts of a spraying module, a visual detection module and an adsorption module. The jet flow sprayed based on the electro-hydrodynamic effect pre-prints a complex micro-nano functional structure layer pattern on a substrate, and then the size of the jet flow and the deposition position of the jet flow are induced under the action of an electric field force. The two spraying heads are jointly and cooperatively sprayed to quickly realize the spraying manufacturing of the same shape as the pre-printed functional layer. The pre-printed functional layer and the subsequent continuous jet flow of nano scale are fully bonded and solidified to form a composite micro-nano functional structure. The electro-spraying method changes the distribution of the electric field force of the substrate by using the pre-printed functional layer, ensures the deposition position accuracy of the jet flow, and reduces the process size error of the composite micro-nano functional structure. The method has the advantages of low equipment cost, simple process, short processing period and the like, optimizes the micro-nano functional structure, and improves the service performance and service life of the nano device.