8 results about "Nanodevice" patented technology

This invention discloses a method for controlling the thermal relaxation path of superconducting nanostructures and its application. This method utilizes a van der Waals integration strategy to sequentially fabricate a molybdenum disulfide layer on a silicon / silicon oxide substrate using chemical solution deposition and a niobium nitride superconducting layer using magnetron sputtering, constructing a niobium nitride / molybdenum disulfide heterostructure with intrinsic anisotropic thermal conductivity. Superconducting nanodevices with specific geometric configurations are designed for this heterostructure. Leveraging the ultra-high in-plane thermal conductivity of molybdenum disulfide and its suppressed out-of-plane heat transfer characteristics, the method achieves directional control of the internal thermal relaxation path of the superconducting nanostructure, verifying its dual advantages of optimizing thermal management and enhancing superconducting performance. The control method of this invention is mature and controllable, effectively transforming disordered thermal relaxation into directional heat transfer, significantly improving the thermal stability and integration density of superconducting devices, and providing a core solution for the thermal management of nanocircuits in fields such as superconducting quantum computing and high-sensitivity quantum detection.

According to embodiments of the present invention, a semiconductor device includes a plurality of nanodevices (ND1, ND2) including a plurality of upper transistors and a plurality of lower transistors. The plurality of nanodevices includes upper active regions (135, 140, 145) and lower active regions (120, 125) that are offset from each other across the plurality of upper transistors and the plurality of lower transistors. A first front-side gate cut dielectric pillar (190, 195) is adjacent to and parallel with a first nanodevice of the plurality of nanodevices along an x-axis. A backside surface of the first front-side gate cut dielectric pillar extends a first width along a y-axis. A first backside dielectric filler (240, 245) is in direct contact with the backside surface of the first front-side gate cut dielectric pillar. A frontside surface of the first backside dielectric filler extends a second width along the y-axis. The second width is greater than the first width.

A method includes using a first procedure of discretizing a user specified nano-device structure for at least one quantum method with open boundary conditions. Additionally, the first procedure includes solving the at least one quantum method with open boundary conditions, thereby having a solution of the at least one quantum method with open boundary conditions. Moreover, the first procedure includes extracting a parameter out of the solution of the at least one quantum method with open boundary conditions. Furthermore, the first procedure includes discretizing at least one quantum method with closed boundary conditions to the user-specified nano-device structure using the parameter. Next, the first procedure includes solving the at least one quantum method with closed boundary conditions to the user-specified nano-device structure using the parameter. Further, the first procedure includes extracting the device behavior of the user-specified nano-device structure. The first procedure is iterated until a condition is satisfied.

A microelectronic structure including a first nano device that includes a plurality of first transistors and a second nano device that includes a plurality of second transistors. The first nano device and the second nano device are parallel to each other. A double diffusion break that extends across the first nano device and the second nano device. A back-end-of-the-line (BEOL) layer located on a frontside of the first nano device and the second nano device. A backside interconnect located on a backside of the first nano device and the second nano device and the BEOL layer is connected to the backside interconnect through the double diffusion break.

Disclosed herein are DNA origami nanostmcture that can be functionalized for personalized and targeted drug delivery. The disclosed nanostructures enter cells through the endolysosomal pathway and circumvent drug resistance mechanisms in target cells. The disclosed nanostructures can be loaded small molecule drugs (e.g. anthracyclines, anti-metabolites) and nucleic acids (e.g. antisense oligonucleotides, siRNA, miRNA) with targeting and / or therapeutic antibodies against tumor-specific antigens (e.g. anti-CD33, anti-CD20) that can be modified to treat to a wide range of cancers and ultimately tailored to specific patients' needs for precision medicine.

A semiconductor device including a first nanodevice is located on a substrate, where the first nanodevice includes at least one channel. A first source / drain connected to the first nanodevice. A second nanodevice located on the substrate, where the second nanodevice includes at least one channel and a second source / drain connected to the second nanodevice. A first contact located above the first source / drain. A second contact located above the second source / drain. A contact cap located on top of the first contact and the second contact, where the contact cap has a first leg that extends downwards between the first contact and the second contact. The first leg of the contact cap is in contact with a first sidewall of the first contact, and a first sidewall of the second contact.

This invention discloses a magnetic absorption device for clinical circuits, including a support base. A winding base is fixedly installed at the right end of the support base, and an adjusting cylinder is rotatably connected to the right end of the winding base. A circuit body is wound on the circumferential surface of the winding base and the left half of the circumferential surface of the adjusting cylinder. A threaded rod is fixedly installed at the right end of the winding base. A sliding groove is formed through the circumferential surface of the adjusting cylinder, and an axial clamping member is slidably connected through the groove. A radial clamping member is provided at the left end of the axial clamping member. First, the left end of the circuit body is engaged with a C-shaped buckle. Then, the circuit body is wound around the outside of the inner liner tube. The pressure ring is pushed to the right, and the circuit body is continued to be wound. After releasing the pressure ring, the pressure ring is pressed tightly against the right side of the circuit body. The threaded sliding column is pushed to slide in the arc-shaped groove, so that the clamping arm clamps the outside of the circuit body. This achieves the purpose of tightly winding the circuit body onto the winding base and the adjusting cylinder.

This invention belongs to the field of nanodevices, and particularly relates to a carbon quantum dot-reinforced triboelectric nanogenerator, comprising two mating friction plates, at least one of which has a carbon quantum dot-reinforced nanofiber membrane disposed on its surface; the carbon quantum dot-reinforced nanofiber membrane is formed by electrospinning of a spinning solution containing polyvinylidene fluoride, polyvinylpyrrolidone, and carbon quantum dots. The triboelectric nanogenerator provided by this invention has good electrical output performance, and it can emit fluorescence under ultraviolet light irradiation, which is beneficial for judging the working status of the triboelectric nanogenerator in a dark environment.