78 results about "Potential well" patented technology

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

The invention discloses a double-cantilever-beam piezoelectric vibration energy collector based on an annular steady state, which comprises a piezoelectric transducer, an elastic cantilever beam, a magnet and a base, after the piezoelectric transducer is mounted on the elastic cantilever beam to form a double-layer composite cantilever beam, the magnet is mounted at the free end of the double-layer composite cantilever beam, nonlinear coupling is carried out through repulsive magnetic force, and the piezoelectric transducer is connected with the base. The two-dimensional annular potential well structure with the adjustable potential well is formed, and the energy collector can easily trigger large-amplitude inter-well movement through the potential well structure. Through the nonlinear coupling induced internal resonance effect, inter-well energy transfer and two-dimensional potential well modulation are realized, and vibration energy can be efficiently captured in a broadband without a large amount of energy input or a complex structure. According to the design, the collection efficiency of low-frequency, low-intensity and multi-direction environment vibration energy in a wide working bandwidth is good.

The application discloses a heterojunction structure, a semiconductor device structure and a manufacturing method thereof. In the method, an intermediate structure layer material is formed between two semiconductor active layers. The intermediate structure layer material blocks the diffusion of metal elements between the two semiconductor active layers on one hand, and the energy band of the intermediate structure layer material has a lower potential barrier for electrons on the other hand, so that the electrons can freely migrate or massively tunnel between the two semiconductor active layers, thereby forming a more ideal heterojunction interface between the first active layer and the second active layer and obtaining a deeper heterojunction potential well. The semiconductor heterojunction is formed to be more ideal, so that the performance advantages of the heterojunction in a metal-oxide-semiconductor device can be truly utilized and exerted. The performance of existing high-mobility high-stability transistors or high-voltage diodes and other devices is improved.

A method for cooling at least one ion (8) within a capture potential of an ion trap (2), comprising: - capturing the at least one ion (8) in the capture potential, wherein the at least one ion (8) oscillates about a potential minimum of the capture potential between a first inflection point region (13) and a second inflection point region (14), - illuminating the at least one ion (8) with a laser beam in the first inflection point region (13) and / or the second inflection point region (14) for cooling the at least one ion, wherein the laser beam has a beam center characteristic of a peak intensity and the beam center is spaced from the potential minimum, and - decreasing a distance of the beam center from the potential minimum until the beam center overlaps with the potential minimum, for further cooling of the at least one ion. Furthermore, a system (1) is specified.

The application relates to the fields of semiconductor photoelectric devices and semiconductor display manufacturing, and particularly relates to a GaN-based Mini LED epitaxial structure and a preparation method thereof. In the preparation method, when an active region multi-quantum well layer is grown, the temperature of a reaction cavity is set to 800-950 DEG C, a well-barrier temperature difference is 100-150 DEG C, and a potential well layer and a potential barrier layer are alternately grown; when the potential well layer is grown, the pressure of the reaction cavity is 100-190 Tor, the rotating speed is 300-500 r / min, and the carrier gas is H2; when the potential barrier layer is grown, the pressure of the reaction cavity is 200-400 Tor, and the rotating speed is 600-700 r / min. The active region multi-quantum well layer is grown by adopting a slow-speed long-well fast-speed long-barrier method, the Stark effect can be effectively relieved, the stress is reduced, and the luminous efficiency is improved.

The application provides a method for regulating nerve cells based on photo-induced micro-nanometer oscillators and application thereof, and belongs to the technical field of nerve cell regulation. The method comprises the following steps: adding photo-induced micro-nanometer oscillators in an extracellular system of nerve cells, and constructing a first optical potential well by using an optical tweezer system; the first optical potential well captures the photo-induced micro-nanometer oscillators, and positions the photo-induced micro-nanometer oscillators beside the nerve cells; the optical tweezer system is used to periodically switch the laser beam between two preset positions, so that the photo-induced micro-nanometer oscillators vibrate. The application utilizes optical force to drive the photo-induced micro-nanometer oscillators to vibrate and generate local ultrasonic waves, and does not need gene modification or implantation of devices, and the spatial resolution can reach a sub-micron level, thereby solving the contradiction between precision, damage and applicability in the prior art, and providing a new tool for nerve regulation.

This invention provides a method for fabricating LED epitaxial wafers and a Micro-LED. The method involves fabricating a multi-quantum-well layer with a periodic stacked structure of InGaN / InN / AlGaN / GaN layers. The InGaN layer acts as a potential well layer, allowing electrons and holes to recombine and participate in light emission. The ultra-thin design improves polarization and reduces QCSE (Quantum Conversion Efficiency). Simultaneously, the ultra-thin design also reduces indium segregation caused by high In content. The InN layer enhances effective In incorporation, and sufficient NH3 further reacts with precipitated In atoms to form InN, resulting in effective incorporation. This improves the In content while maintaining crystal quality. Furthermore, the AlGaN layer acts as a high barrier layer, effectively confining electrons, while the GaN layer provides hole-rich channels, thereby improving luminous efficiency.

The application discloses a kind of space-time modulation spin-orbit coupling distribution structure method and device, and the device includes vacuum structure and laser generation structure;Vacuum structure is used to capture control supercold atomic gas and target supercold atomic gas, wherein there is spin-exchange interaction between control supercold atomic gas and target supercold atomic gas;Laser generation structure is used to generate multiple different laser beams in vacuum structure, to prepare the optical potential well of control supercold atomic gas, the density distribution of control supercold atomic gas is regulated, to generate the space-time modulation spin-orbit coupling intensity distribution in target supercold atomic gas.The density of control supercold atomic gas is directly regulated by optical potential well in the application, and the effective spin-orbit coupling in target supercold atomic gas is indirectly regulated, and the device structure provided by the application is simple and dynamically adjustable, and strong in applicability.

The application relates to a method for regulating the thermal conductivity of a nanometer semiconductor interface in contact and non-contact states, which comprises the following steps: (1) establishing a molecular dynamics thermal transport model composed of a hot region A and a cold region B; (2) performing molecular dynamics simulation and data processing: comparing the interface thermal conductivities under different twist angles in the contact state and the non-contact state to determine the dependence of the interface thermal conductivity on the twist angle; in the contact state, comparing the overlapping areas of the phonon state density at the contact interface under different twist angles to determine the influence of the overlapping area of the phonon state density on the thermal transport of different interface twist angles; in the non-contact state, comparing the force constants of the interface interaction potential and the LJ potential under different twist angles to determine the influence of the force constant on the thermal transport of different interface twist angles. The application realizes effective regulation of the ITC by regulating the twist angle, the normal load and the potential well depth, and provides an important basis for the thermal management of nanometer devices.

A simulation method of microvoid evolution in electric field induced interconnection wire based on phase field method, including constructing a phase field model of microvoid evolution in electric field induced face-centered cubic metal {110} orientation "bamboo joint" interconnection wire based on coupled Cahn-Hilliard equation and Allen-Cahn equation; constructing phase field variables of microvoid and grain boundary; constructing distribution functions of electric conductivity and atomic migration rate varying with spatial coordinates; constructing system free energy function F , introducing a free energy function of four double potential well function to modify Cahn-Hilliard equation and Allen-Cahn equation, obtaining phase field control equation of the system; determining conservative phase field order parameter, non-conservative phase field order parameter and electrostatic field parameter, obtaining microvoid evolution in transgranular interconnection wire by coupling phase field and electrostatic field. A direct quantitative tool for the reliability of integrated circuit interconnection wire is proposed.

This invention provides an image sensor, a pixel structure, and a method for manufacturing the same. The pixel structure includes a photoelectric conversion region disposed in a semiconductor substrate and a conductive plate disposed above it. The conductive plate covers a first region of the photoelectric conversion region and induces a hole accumulation layer on its surface by receiving a bias signal, achieving electrical pinning. A doped pinning layer is disposed in a second region outside the projection range of the conductive plate, achieving physical pinning, wherein the doping concentration of the surface doping profile of the first region is lower than that of the second region. Through the synergistic effect of electric field modulation and doping modulation, a stable potential distribution is formed on the surface of the photoelectric conversion region, effectively suppressing dark current. Because high-concentration doping is avoided in the first region, the impact of doping compensation on the potential well is reduced, thereby maintaining a large charge storage space even under pixel miniaturization conditions, improving the full-well capacity and the dynamic range and signal-to-noise ratio of the image sensor.

The invention discloses an efficient light-driven particle capture actuator based on a GO / PDMS-AuNBPs composite film, and belongs to the technical field of micro-nano control and biomedical engineering. The actuator aims at solving the problems that an existing light-driven particle capturing technology is low in photothermal conversion efficiency, depends on high-power laser, and is poor in thermal field stability and single in function. The core structure comprises a photo-thermal composite film and an optical fiber F-P sensing structure. The photo-thermal composite film is composed of a graphene oxide (GO) film and a polydimethylsiloxane (PDMS) film doped with gold nano bipyramid (AuNBPs). The optical fiber interference structure is formed by welding a single mode fiber (SMF) and a hollow fiber (HCF), and the end face of the HCF is coated with a photo-thermal composite film to construct a Fabry-Perot interference (FPI) microcavity; and the sensing unit realizes real-time monitoring of the capture state by monitoring the change of the reflection spectrum of the FPI microcavity. During working, the FPI microcavity plays a role in expanding a beam of a light field so as to improve the light field utilization rate of the GO film. PDMS regulation and control form an axisymmetric temperature potential well, and Marangoni force caused by temperature gradient drives particle capture. The lowest excitation power of the actuator is 11.9 mW, particles of 5-400 microns can be captured, and the actuator has low power consumption, high stability and biological compatibility and is suitable for living cell control, micro-reactor construction and micro-fluidic chip integration.

The application belongs to the field of optoelectronic storage and neuromorphic devices, and discloses a vertical structure optoelectronic memristor transistor and a preparation method and application thereof. The device comprises, from bottom to top, a substrate, a source electrode, an optoelectronic semiconductor layer and a drain electrode; the optoelectronic semiconductor layer is provided with a permeable gate and a dielectric layer coated on the surface of the permeable gate. The application realizes the function of memristor by driving the channel defects to control the Schottky barrier through the source-drain voltage, and realizes the promotion of storage by using light to promote the trap capture and deepening of the potential well at the interface of the optoelectronic semiconductor layer / dielectric layer. At the same time, the vertical structure shortens the effective transmission distance of the optoelectronic semiconductor layer and improves the integration. Thus, the device supports the modes of optical readout and light-assisted writing under the action of light, and is suitable for application scenarios such as image sensing-storage integration, near-sensing computing, optical synapse and neuromorphic array.

The invention belongs to the technical field of organic field effect transistors, and particularly relates to a high-mobility field effect transistor based on an organic double-quantum well structure and a preparation method of the high-mobility field effect transistor. The high-mobility field effect transistor comprises a grid electrode, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, the insulating layer is located between the grid electrode and the organic semiconductor layer, an OTS modification layer is arranged between the insulating layer and the organic semiconductor layer, and the organic semiconductor layer is composed of a C8-BTBT layer / (Pentaene layer / C8-BTBT layer) n and n = 2 in the direction from the grid electrode to the source electrode and the drain electrode. According to the organic double-quantum well composed of C8-BTBT and pentacene, a potential well is formed by alternating different energy gap materials, carriers are limited in a narrow energy band region, scattering is reduced, directional transportation is promoted, and the mobility of the transistor is greatly improved.

A method for transitioning an atom from a first state to a second state with a single photon, wherein a motional state of the atom is preserved, is provided. The method may include: (a) providing a plurality of atoms in a plurality of spatially distinct optical trapping sites, and (b) generating a translating excitation potential in a spatial dimension across a confining potential energy landscape of the first state of the atom of the plurality of atoms, wherein a temporal duration of the translating excitation potential is short relative to a characteristic length of the confining potential energy landscape, thereby transitioning the atom from the first state to the second state.

The invention provides a semiconductor epitaxial laminated layer of a light-emitting diode, an LED chip and a light-emitting device. An active layer in the semiconductor epitaxial lamination comprises a multi-quantum well structure of multiple periods, the active layer comprises M sequences, the sequence closest to an N-type semiconductor layer is a first sequence, a Qth sequence comprises potential well layers and potential barrier layers of ZQ periods, M is larger than or equal to 2, ZQ is larger than or equal to 1, and Q is larger than or equal to 1 and smaller than or equal to M; the potential well layers in the M sequences have the same material composition, the potential barrier layers are AlGaInP material layers with different aluminum component contents, the material composition of the potential barrier layer in the Qth sequence is (AlyQGa1-yQ) InP, yQ is larger than or equal to 0.5 and smaller than or equal to 1, the values of yQ in the M sequences are different, and y1 of the first sequence pair has the maximum value. In this way, the material of the barrier layer in the sequence close to one side of the N-type semiconductor has a high aluminum component, so that the barrier layer has high crystal bonding energy, defects such as dislocation extending from the growth substrate during growth of the semiconductor epitaxial lamination can be effectively overcome, diffusion migration of doped atoms can be effectively blocked, and the performance of the semiconductor epitaxial lamination is improved. The maximum radiation recombination of electrons and holes is ensured, the aging light attenuation level is effectively improved, and the service life of an LED is prolonged.

This invention relates to the field of gravity measurement, aiming to provide a small-sized, high-precision gravimeter based on the principle of antimagnetic levitation. The gravimeter includes a low-frequency magnetic potential trap unit, a levitation oscillator unit, a displacement detection unit, and a cavity enclosure unit. The lens groups of the low-frequency magnetic potential trap unit, the levitation oscillator unit, and the displacement detection unit are all located in the cavity of the innermost insulated shell. This invention provides a measurement environment free from external influences for displacement detection of the levitation oscillator, counteracts adjustments to the vertical frequency in the antimagnetic levitation potential trap, and uses a photoelectric converter to measure voltage fluctuations caused by changes in laser intensity to reflect the motion of the object under test, achieving high-precision gravity measurement. The oscillator uses magnetic levitation and does not have mechanical contact with the environment, avoiding long-term irreversible deformation. It eliminates the need for bulky temperature control and magnetic shielding devices or other auxiliary equipment; therefore, the overall size of the gravimeter is small, easy to move, and inexpensive, facilitating widespread adoption.

According to the enhanced high-electron-mobility transistor and the preparation method thereof provided by the invention, the P-type delta doping layer with higher doping concentration is arranged in the P-type gate structure, so that an electron barrier is formed in the P-type gate energy band structure, and in the working process of a device, the electron barrier can prevent electrons from flowing in the gate structure, so that electric leakage is reduced, and the reliability of the device is improved. Meanwhile, bombardment of electrons to gate metal is avoided, and gate reliability is improved; meanwhile, the delta doping layer can form hole potential wells in the P-type gate energy band structure one by one, and free flow of holes cannot be greatly influenced, so that the holes are freely injected into the device, and relatively low working on-resistance of the device is ensured; the inserted P-type delta doping layer can reduce the overall resistivity of the P-type gate structure to a certain extent, reduce the input resistance, and facilitate the improvement of the crystal quality of the overall P-type gate structure; and the P-type delta doping process can be compatible with the existing traditional epitaxial process equipment, and the process is simple and easy to implement.

This invention relates to the field of traffic safety technology, specifically to an efficient simulation method for quantum systems based on parallel order reduction. The method includes the following steps: receiving the physical parameters of the quantum system and simulation requirements, whereby the physical parameters include electron mass, potential well size, and initial wave packet parameters; and the simulation requirements include simulation physical time and accuracy requirements. Based on the physical parameters, a time-dependent Schrödinger equation describing the dynamic behavior of the quantum system is established, and the Schrödinger equation is rearranged into matrix form using the Kronecker product. This invention utilizes Arnoldi to reduce the order of the matrix-form Schrödinger equation. By reducing the order, the large matrix in the original space is projected into a relatively small subspace, improving the efficiency of the simulation solution. The reduced-order Schrödinger equation is solved using a time-parallel algorithm. This approach overcomes the time step limitation imposed by the CFL condition, ensuring that a stable solution can be obtained with fewer time steps.

In some embodiments, embodiments of the present disclosure relate to an integrated chip. The integrated chip includes a substrate having a device region with one or more semiconductor devices. The substrate has one or more inner surfaces forming one or more trenches within the substrate along opposite sides of the device region. The multilayer film stack is disposed along one or more interior surfaces of the substrate. A core material is disposed within the one or more trenches and surrounded by a multilayer film stack. The multilayer film stack includes a plurality of dielectric materials having different electron affinity properties, respectively. A plurality of dielectric materials are arranged to form one or more potential wells within the multilayer film stack. The embodiment of the invention also relates to an integrated chip and a forming method thereof.

The invention relates to the technical field of semiconductor testing and metering, and discloses a standard sample carrier lifetime valuing method and traceability system, and the method comprises the following steps: positioning a sample to be tested, stabilizing the environment, and initializing the system; constructing a periodically modulated acoustic potential well in the sample body, and exciting a coherent quantum state at the center of the potential well by using a coherent double-pulse sequence; a returned optical signal is collected, and an attenuation envelope of the returned optical signal is extracted through a differential locking demodulation technology; physical self-consistency verification is carried out through a rotating acoustic field stress axis, and attenuation envelope fitting is carried out to extract carrier life parameters; and performing statistical analysis on the multiple groups of parameters to determine a final constant value, and constructing a quantity value tracing chain to a frequency reference. According to the invention, the three-dimensional acoustic standing wave field is adopted to construct the acoustic potential well in the sample sheet material, and the photon-generated carriers are confined in the sample sheet in a non-contact manner, so that the direct measurement of the carrier body lifetime is realized, and the defect that the measurement result is seriously influenced by the surface state of the sample sheet is overcome.

An ion transport apparatus comprises a plurality of electrodes including a set of axial confinement electrodes, a set of radial confinement electrodes, and an orthogonal extraction part. The electrodes collectively to define a volume extending along an ion optical axis to form a channel. The radial confinement electrodes and the orthogonal extraction part are configured to receive RF voltages to generate a radially-confining electric pseudo-potential within the channel. The axial confinement electrodes receive DC voltages for generating an axially-confining electric potential field forming a potential well within the channel for axially confining ions therein. The orthogonal extraction part is configured for transmission therethrough of ions from the channel in a direction transverse to the ion optical axis. The angled axial confinement electrodes define an axially varying field radius that changes with increasing axial proximity to the orthogonal extraction part to align the potential well with the orthogonal extraction part.

The invention relates to an antimonide dual-wavelength narrow-linewidth laser with a waveband of 2 microns. Relates to the technical field of semiconductor lasers, in particular to the technical field of a 2-micron-waveband antimonide dual-wavelength narrow-linewidth laser. According to the invention, two different quantum wells are separated by using a thin potential barrier of 1-2nm to obtain a tunneling coupling asymmetric quantum well structure, and then dual-wavelength output is realized through electron transition. The laser comprises a laser gain area and a composite DBR grating area. The laser gain region comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a tunneling coupling asymmetric quantum well active region, an upper waveguide layer, an upper limiting layer and a contact layer; the tunneling coupling asymmetric quantum well active region comprises a first potential well layer, a potential barrier layer and a second potential well layer; the composite DBR grating area comprises a DBR grating with the period T1 on the ridge waveguide and lateral DBR gratings with the periods T2 on the two sides of the ridge waveguide.

The application relates to the technical field of piezoelectric energy collection, and discloses a magnetic deflection type elastic boundary three-stable piezoelectric energy collection device, which comprises a pair of horizontally symmetric transverse cantilever beam assemblies, a pair of longitudinally symmetric longitudinal cantilever beam assemblies, and a pair of symmetric magnet-spring devices arranged in each longitudinal cantilever beam assembly; wherein the transverse cantilever beam assembly adopts double magnets to realize reverse deflection and reduce the depth of a potential well; the magnet-spring device of the longitudinal cantilever beam assembly generates horizontal displacement during vibration, forms an elastic boundary, generates a variable potential well, and further reduces the depth of the potential well. Compared with a traditional three-stable piezoelectric energy collector, the application only needs smaller external energy input, can realize that the cantilever beam crosses the potential well at a stable balance position, causes large-amplitude vibration, makes the piezoelectric element generate large deformation, generates a large amount of electric charges on the surface of the piezoelectric element, and thus has higher energy collection efficiency.

Disclosed in the present application are a germanium-silicon quantum well material, and a preparation method therefor and the use thereof. The germanium-silicon quantum well material sequentially comprises, from bottom to top: a germanium-silicon substrate layer, a germanium-silicon buffer layer, a first barrier layer, a potential well layer and a second barrier layer, wherein the component contents of germanium and silicon in at least one of the first barrier layer, the potential well layer and the second barrier layer are respectively in a gradual change state, with the gradual change state comprising gradually increasing from bottom to top, gradually decreasing from bottom to top, and / or fluctuating changes. The germanium-silicon quantum well material of the present application can be used in precise quantum devices, and can effectively solve the problem of surface charge accumulation during the grid control process of a germanium-silicon quantum device, thereby optimizing the performance of various germanium-silicon grid control quantum devices.

Selective frequency dissipation is implemented that enables cooling of energy gap protected qubits such that excited energy states resulting from heating or other undesired processes are returned to a lower excited energy state or a ground state manifold, thus reducing the probability of errors. Also, the selective frequency dissipation inhibits leakage from the energy gap protected qubits when in the ground state. Additionally or alternatively, Hamiltonian engineering by inducing parity rotations is implemented to decouple the wells of the energy gap protected qubit to further reduce errors when leakage does happen.

The application relates to the field of optical technology and discloses a second-order soliton trap transmission state regulation method based on an optical event horizon simulation, which comprises the following steps: preparing a second-order soliton pulse and an external probe pulse, wherein the second-order soliton pulse is generated through the balance of dispersion and nonlinearity in a nonlinear optical fiber, the external probe pulse is a weak power pulse, the group velocity parameter of the second-order soliton pulse and the external probe pulse is measured, and group velocity matching and group velocity mismatch conditions are set; through accurate setting of the group velocity matching and mismatch conditions and quantitative calculation of the refractive index change caused by the soliton pulse based on the Kerr effect, an equivalent event horizon is defined, definite physical parameter benchmarks and stable potential well environments are provided for transmission state regulation, the stability of a soliton potential well action boundary can be determined and ensured, the transmission state misjudgment problem caused by potential well drift and distortion is overcome, and the accuracy of the regulation process and the predictability of the result are ensured.

The application relates to the technical field of acceleration detection by using optical force, and discloses an optical force accelerometer based on spin cooling and a use method, which realizes acceleration detection by using laser-suspended microspheres, and improves detection precision by using the spin cooling effect of the microspheres in an optical field to inhibit thermal motion of the microspheres. Laser is processed into circularly polarized light suitable for capture and rotation driving by a laser modulation unit, and is input into a capture cooling unit; the capture cooling unit utilizes a potential well formed by an optical field to realize capture and rotation cooling of microparticles, simultaneously outputs laser carrying state information of the microparticles, and a displacement detection unit realizes acceleration response output by analyzing and monitoring the displacement state of the microparticles in real time through analysis of outgoing laser; a test unit provides auxiliary illumination and completes visual observation of behaviors of the microparticles, and together forms an optical capture and measurement system. The spin cooling method is adopted to realize cooling of a sensitive mass of the optical force accelerometer, the structure of a cooling system is simplified, performance requirements are reduced, practical potential is high, and cost is low.

A vacuum pressure sensor comprises and ion trap device, or potential well, is connected to a vacuum chamber to trap ions found within the very low-pressure gas from within the vacuum chamber. A coher

This invention discloses a fully electrostatically focused planar integrable microstrip slow-wave traveling wave tube. This invention uses an electric field generated by electrodes produced by microfabrication technology to replace the magnetic focusing commonly used in vacuum devices. Under the action of the electrodes, the electron beam is subjected to attraction or repulsion forces from electrodes of different polarities. Due to the periodic changes in electrode potential, the particles alternately focus and defocus in the x and y directions, but the fluctuations in the z-direction of propagation remain within a certain range. By matching the electrode period with the period of the microstrip slow-wave structure, a periodic electrostatic potential well is formed in the longitudinal direction, thereby achieving stable constraint and dynamic control of the electron beam, completing the fully electrostatic focusing of the electron beam in the traveling wave tube.