199 results about "Potential well" patented technology

The invention relates to the field of gravity measurement, and aims to provide a small-size high-precision gravimeter based on an anti-magnetic suspension principle. The gravimeter comprises a low-frequency magnetic potential well unit, a suspension mechanical oscillator unit, a displacement detection unit and a cavity enclosing unit, and lens groups of the low-frequency magnetic potential well unit, the suspension mechanical oscillator unit and the displacement detection unit are all located in a cavity of a heat preservation shell on the innermost side. According to the invention, a measurement environment without external influence can be provided for the displacement detection of the suspension oscillator, the adjustment of the frequency in the vertical direction in a magnetic suspension potential well is resisted, the movement of an object to be measured is reflected by the voltage fluctuation brought by the laser intensity change measured by the photoelectric converter, and the high-precision gravity measurement is realized; the vibrator adopts a magnetic suspension mode and does not make mechanical contact with the environment, and long-term irreversible deformation can be avoided; and a temperature control and magnetic shielding device or other auxiliary equipment with a large volume is not needed, so that the gravimeter is small in overall size, convenient to move, low in cost and beneficial to popularization.

The invention discloses a phase regulation and control method, device and system for holographic optical tweezer potential well stiffness, and the method comprises the steps: calculating a decomposition matrix formula, a matrix expression and a Hermi matrix expression according to input system configuration parameters, carrying out the expansion of a stiffness coefficient of an optical trap through the Hermi matrix expression, and obtaining a stiffness coefficient expansion expression, performing phase optimization on the spatial light modulator based on a pixel symmetry rule to obtain an optimized phase value, generating a regulation and control instruction through the optimized phase value, sending the regulation and control instruction to the spatial light modulator, and recalculating a coefficient value of the stiffness coefficient expansion expression, and if the coefficient value or the number of optimization times meets the iterative optimization condition, returning to the step of performing phase optimization on the spatial light modulator. According to the phase regulation and control method, the Hermi matrix expression and the stiffness coefficient expansion expression can be solved according to the system configuration parameters, phase modulation is carried out on the light beam by generating the regulation and control instruction, and the application effect of independent optimization of the potential well stiffness phase is improved through phase iterative optimization.

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

The invention discloses a quantum correction method for drift diffusion transportation of a gallium nitride power device in advanced packaging and a three-dimensional integrated module electrothermal coupling simulation method. According to the method, a one-dimensional stationary Schrodinger equation and a two-dimensional Poisson equation are solved in a self-consistent mode, sub-band energy levels, corresponding wave functions and potential distribution in the quantum confinement direction are obtained, and the convergence of a self-consistent algorithm is improved by modifying the Poisson equation; quantum correction of the drift diffusion equation is realized by correcting the conduction band; starting from a quantum confinement effect and a drift diffusion transport theory, the quantum effect of two-dimensional electron gas in a triangular potential well formed by a gallium nitride polarization effect and a quantum correction method of a drift diffusion transport model are researched, and the steady-state operating characteristics of an advanced packaging power device containing the quantum effect are evaluated. And an electrothermal coupling simulation method of the device and the three-dimensional integrated module is further researched, the thermal management capability of the three-dimensional integrated module is evaluated, and the method has important application value.

The invention discloses an III-group nitride device with single particle irradiation resistance. According to the invention, the hole storage layer is introduced between the buffer layer and the channel layer of the epitaxial layer structure, and the hole storage layer forms a hole potential well on the energy band structure so as to effectively collect irradiation-induced excess holes in the channel layer; meanwhile, an extraction electrode and a second source electrode are arranged to respectively collect irradiation-induced excess holes in a nearby area below the grid electrode and between the grid electrode and the source electrode. Wherein the extraction electrode is arranged between the grid electrodes which are sequentially arranged at intervals, and the extraction electrode and the second source electrode are connected with the first source electrode through the metal interconnection layer. The single particle irradiation resistance of the device can be effectively improved, the manufacturing process is compatible with the existing process, and complex process steps do not need to be additionally introduced.

A method and corresponding devices to reduce the presence of unwanted ions within the pseudo-potential well of the RF fields for inductively coupled plasma mass spectrometry is disclosed. This method reduces space-charge effects and leaves more room available for the ions of interest and, hence, leads to increased transmission of the desired ions into the mass analyzer. In the present invention, the space charge is reduced by adding a low-band resolving DC potential, or a fast sweeping resolving DC potential with a notch, or a fast constant resolving DC potential with a notch, or by adding auxiliary quadrupolar or dipolar RF potential to the quadrupole ion guide, such that all the unwanted ions will be outside the stable region and therefore ejected. This reduces the charge density in the ion beam and ameliorate space charge effects.

The invention relates to the technical field of quantum physics and quantum, in particular to a super-cold atom defect-free array generation method, which comprises the following steps: S1, capturing cold atoms by using a light potential well generated by a spatial light modulator to form an initial n * 2m array; s2, shooting an image of the initial array, preprocessing the image of the initial array, transmitting the preprocessed data to a neural network for identification, and outputting an atomic position matrix; s3, calculating a moving path from the n * 2m array to the target n * m defect-free array by using a moving algorithm according to the atomic position matrix; and S4, according to the moving path, the atomic position of each column or each row in the array is adjusted, and a final defect-free target array is obtained. According to the invention, the defect-free atom array can be efficiently generated. According to the invention, through combination of neural network identification, loading of the initial array by the spatial light modulator and optimization of atom movement, efficient conversion from the initial n * 2m atom array to the target n * m defect-free array is realized.

The invention discloses a double-cantilever-beam piezoelectric vibration energy collector based on an annular steady state, which comprises a piezoelectric transducer, an elastic cantilever beam, a magnet and a base, after the piezoelectric transducer is mounted on the elastic cantilever beam to form a double-layer composite cantilever beam, the magnet is mounted at the free end of the double-layer composite cantilever beam, nonlinear coupling is carried out through repulsive magnetic force, and the piezoelectric transducer is connected with the base. The two-dimensional annular potential well structure with the adjustable potential well is formed, and the energy collector can easily trigger large-amplitude inter-well movement through the potential well structure. Through the nonlinear coupling induced internal resonance effect, inter-well energy transfer and two-dimensional potential well modulation are realized, and vibration energy can be efficiently captured in a broadband without a large amount of energy input or a complex structure. According to the design, the collection efficiency of low-frequency, low-intensity and multi-direction environment vibration energy in a wide working bandwidth is good.

The invention relates to a method for regulating and controlling thermal conductivity of a nanometer semiconductor interface in contact and non-contact states. The method comprises the following steps: (1) establishing a molecular dynamics thermal transport model consisting of a hot area A and a cold area B; (2) executing molecular dynamics simulation and data processing: comparing interface thermal conductance at different torsion angles in a contact state and a non-contact state so as to determine a dependency relationship of the interface thermal conductance on the torsion angles; in the contact state, comparing the overlapping areas of the phonon state densities at the contact interface under different torsion angles, and determining the influence of the overlapping areas of the phonon state densities on heat transport of different interface torsion angles; and in a non-contact state, comparing the force constants of the interface interaction potential and the LJ potential at different torsion angles, and determining the influence of the force constants on heat transport in different interface torsion angle states. By regulating and controlling the torsion angle, the normal load and the potential well depth, effective regulation and control of the ITC are realized, and an important basis is provided for thermal management of a nano device.

The invention discloses a high-conductivity AlN / GaN heterojunction which sequentially comprises a sapphire substrate, an AlN buffer layer, a GaN channel layer and an AlN barrier layer from bottom to top. The total polarization intensity in an AlN material of the GaN channel layer is far greater than the total polarization intensity in a GaN material of the AlN barrier layer, net positive charges appear at an interface, the positive charges attract free electrons, a triangular potential well is formed on one side of GaN near the interface, the electrons are limited in the potential well by quantum, and high-density two-dimensional electron gas is formed. Polycrystal AlN is converted into single crystal AlN through magnetron sputtering in combination with a thermal annealing technology, so that the characteristic of small stress of the single crystal AlN is reserved, and two-dimensional electron gas can be formed at the interface of the AlN / GaN heterojunction.

The invention discloses an LED structure and a preparation method thereof, the LED structure comprises a substrate structure, a first semiconductor layer, a quantum well structure and a second semiconductor layer which are stacked in sequence, and the conduction types of the first semiconductor layer and the second semiconductor layer are opposite; the quantum well structure comprises a potential well layer and a barrier layer located on one side, far away from the substrate structure, of the potential well layer; wherein the potential well layer comprises a plurality of potential well sub-layers which are arranged in a stacked mode, the potential well layer comprises In components, the In components of at least three potential well sub-layers in the plurality of potential well sub-layers are different, and the light-emitting wavebands of the at least three potential well sub-layers corresponding to the different In components comprise a red light waveband, a green light waveband and a blue light waveband. According to the invention, the potential well sub-layers with different In components are integrated on the single-layer potential well layer for gathering, so that the luminous efficiency of the LED structure can be improved, light with different wave bands is emitted, and full-color display is realized.

The invention discloses a nitride semiconductor resonant tunneling diode oscillator and a manufacturing method thereof. The problems that an existing resonant tunneling diode oscillator is low in output power, large in material epitaxy difficulty, high in direct-current power consumption and large in circuit complexity, and resonant frequency drifts due to substrate coupling are mainly solved. The device comprises a resonant tunneling diode and a slot antenna, the resonant tunneling diode comprises a substrate, an emitter ohmic contact layer, a first isolation layer, a first barrier layer, a potential well layer, a second barrier layer, a second isolation layer and a collector ohmic contact layer from bottom to top, and all the layers are made of nitride materials; the slot antenna comprises a metal ground, a dielectric plate, a metal slot layer and an MIM capacitor from bottom to top. The whole nitride semiconductor resonance tunneling diode is located on one side of the metal gap layer and connected with the MIM capacitor. Influence of substrate coupling on resonant frequency is shielded, direct current power consumption and circuit complexity are low, output power is high, a material epitaxy process is simple, and the terahertz high-power radiation source can be applied to a terahertz on-chip high-power radiation source.

The application discloses a heterojunction structure, a semiconductor device structure and a manufacturing method thereof. In the method, an intermediate structure layer material is formed between two semiconductor active layers. The intermediate structure layer material blocks the diffusion of metal elements between the two semiconductor active layers on one hand, and the energy band of the intermediate structure layer material has a lower potential barrier for electrons on the other hand, so that the electrons can freely migrate or massively tunnel between the two semiconductor active layers, thereby forming a more ideal heterojunction interface between the first active layer and the second active layer and obtaining a deeper heterojunction potential well. The semiconductor heterojunction is formed to be more ideal, so that the performance advantages of the heterojunction in a metal-oxide-semiconductor device can be truly utilized and exerted. The performance of existing high-mobility high-stability transistors or high-voltage diodes and other devices is improved.

A method for cooling at least one ion (8) within a capture potential of an ion trap (2), comprising: - capturing the at least one ion (8) in the capture potential, wherein the at least one ion (8) oscillates about a potential minimum of the capture potential between a first inflection point region (13) and a second inflection point region (14), - illuminating the at least one ion (8) with a laser beam in the first inflection point region (13) and / or the second inflection point region (14) for cooling the at least one ion, wherein the laser beam has a beam center characteristic of a peak intensity and the beam center is spaced from the potential minimum, and - decreasing a distance of the beam center from the potential minimum until the beam center overlaps with the potential minimum, for further cooling of the at least one ion. Furthermore, a system (1) is specified.

The application relates to the fields of semiconductor photoelectric devices and semiconductor display manufacturing, and particularly relates to a GaN-based Mini LED epitaxial structure and a preparation method thereof. In the preparation method, when an active region multi-quantum well layer is grown, the temperature of a reaction cavity is set to 800-950 DEG C, a well-barrier temperature difference is 100-150 DEG C, and a potential well layer and a potential barrier layer are alternately grown; when the potential well layer is grown, the pressure of the reaction cavity is 100-190 Tor, the rotating speed is 300-500 r / min, and the carrier gas is H2; when the potential barrier layer is grown, the pressure of the reaction cavity is 200-400 Tor, and the rotating speed is 600-700 r / min. The active region multi-quantum well layer is grown by adopting a slow-speed long-well fast-speed long-barrier method, the Stark effect can be effectively relieved, the stress is reduced, and the luminous efficiency is improved.

The application provides a method for regulating nerve cells based on photo-induced micro-nanometer oscillators and application thereof, and belongs to the technical field of nerve cell regulation. The method comprises the following steps: adding photo-induced micro-nanometer oscillators in an extracellular system of nerve cells, and constructing a first optical potential well by using an optical tweezer system; the first optical potential well captures the photo-induced micro-nanometer oscillators, and positions the photo-induced micro-nanometer oscillators beside the nerve cells; the optical tweezer system is used to periodically switch the laser beam between two preset positions, so that the photo-induced micro-nanometer oscillators vibrate. The application utilizes optical force to drive the photo-induced micro-nanometer oscillators to vibrate and generate local ultrasonic waves, and does not need gene modification or implantation of devices, and the spatial resolution can reach a sub-micron level, thereby solving the contradiction between precision, damage and applicability in the prior art, and providing a new tool for nerve regulation.

This invention provides a method for fabricating LED epitaxial wafers and a Micro-LED. The method involves fabricating a multi-quantum-well layer with a periodic stacked structure of InGaN / InN / AlGaN / GaN layers. The InGaN layer acts as a potential well layer, allowing electrons and holes to recombine and participate in light emission. The ultra-thin design improves polarization and reduces QCSE (Quantum Conversion Efficiency). Simultaneously, the ultra-thin design also reduces indium segregation caused by high In content. The InN layer enhances effective In incorporation, and sufficient NH3 further reacts with precipitated In atoms to form InN, resulting in effective incorporation. This improves the In content while maintaining crystal quality. Furthermore, the AlGaN layer acts as a high barrier layer, effectively confining electrons, while the GaN layer provides hole-rich channels, thereby improving luminous efficiency.

The invention relates to the technical field of liquid phase mass spectrometers, in particular to a small liquid phase mass spectrometer based on high-precision voltage measurement, which comprises a box body, a box shell is mounted at the top end of the box body through bolts, a first-stage cavity, a second-stage cavity and a placement area are arranged in the box shell, and the first-stage cavity, the second-stage cavity and the placement area are distributed in an up-and-down structure; an ion funnel is arranged in the first-stage cavity, and a taper hole plate is mounted at the top of the inner wall of the second-stage cavity through a bolt; the linear ion trap is a double-potential-well plane, collection of entering ions and controllable cooling and throwing of confined ions can be achieved respectively, and compared with a single-potential-well plane ion trap, the linear ion trap is more sufficient in ion collection and focusing and higher in ion concentration efficiency. Meanwhile, the work cycle, the ion flux and the thrown ions of the double-potential-well plane ion trap all meet the work requirements of the multi-reflection time-of-flight mass analyzer, the double-potential-well plane ion trap can be coupled with the multi-reflection time-of-flight mass analyzer, introduced ions with high flux and concentrated states are provided for the multi-reflection time-of-flight mass analyzer, and the detection accuracy and precision of the liquid phase mass spectrometer are greatly improved.

A quantum well structure, a preparation method thereof, and a light-emitting diode. The quantum well structure includes at least one quantum well and at least one first film layer. Each quantum well in the at least one quantum well includes a well layer and a barrier layer stacked on each other, and the well layer includes a first doping element. Each first film layer in the at least one first film layer includes a second doping element. The second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer. The first doping element includes at least one of In and Al, and the second doping element includes at least one of Al, Mg, and Si. The first film layer can adjust (such as increase or inhibit) the content of the first doping element doped into the well layer when the well layer is formed through the catalytic action of the second doping element, so as to adjust the light-emitting efficiency of the quantum well and the wavelength of the emitted light as needed.

The application discloses a kind of space-time modulation spin-orbit coupling distribution structure method and device, and the device includes vacuum structure and laser generation structure;Vacuum structure is used to capture control supercold atomic gas and target supercold atomic gas, wherein there is spin-exchange interaction between control supercold atomic gas and target supercold atomic gas;Laser generation structure is used to generate multiple different laser beams in vacuum structure, to prepare the optical potential well of control supercold atomic gas, the density distribution of control supercold atomic gas is regulated, to generate the space-time modulation spin-orbit coupling intensity distribution in target supercold atomic gas.The density of control supercold atomic gas is directly regulated by optical potential well in the application, and the effective spin-orbit coupling in target supercold atomic gas is indirectly regulated, and the device structure provided by the application is simple and dynamically adjustable, and strong in applicability.

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN / Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1≤1 and 0≤y1<1. An LED device including the multi-quantum well structure is also disclosed.

A process for depositing a nanolaminate on a surface of a flat substrate, the process comprising the steps of:-mounting the substrate on a substrate support in a peripheral region (R) of a holder rotatable about its central axis B in a vacuum process system, the receiver comprises at least one magnetron sputtering station, the sputtering target of which is mounted to and spaced apart from a sputtering source, and at least one plasma processing station having a plasma source, both the sputtering target and the plasma source being directed towards different portions of the peripheral area (R), the method comprises the steps of:-providing a holder,-evacuating a receiver,-rotating the holder around a central axis at a constant speed,-introducing a sputtering gas into the receiver, and-introducing a reaction gas directly into at least one of a sputtering station or a plasma station,-discharging and igniting a magnetron in the sputtering station and setting a magnetron power level (Pm), and-igniting the plasma and setting a plasma power level (Pp) of the plasma source in the plasma processing station,-successively exposing the substrate to a magnetron discharge by rotating the holder to deposit a high refractive index material layer LH, and to a processing plasma to produce a low refractive index material layer L1, wherein the rotational speed of the holder and the magnetron power level (Pm) are set such that the layer thickness dh of the well layer Lh of the high refractive index material is 0.1 < = dh < = 5 nm.

The invention discloses an ultra-cold atom differential interference gyroscope based on a time orbit potential well, and belongs to the field of ultra-cold atom and angular velocity measurement. The device comprises an optical platform, a cooling laser light source, a light trap light source, a Bragg pulse light source, a vacuum cavity, an arbitrary wave generator, a signal generator and six magnetic field coils. The vacuum cavity is positioned above the optical platform; the six magnetic field coils are located around the vacuum cavity and used for generating an alternating-current magnetic field. The signal generator is used for providing alternating current for the magnetic field coil; the cooling light is in three orthogonal directions, and two beams of opposite light are arranged in each direction; the Bragg pulse light is one-dimensional standing wave light; the light trap light and the Bragg pulsed light are two beams of orthogonal light, and the light beam directions of the light trap light and the Bragg pulsed light coincide; the arbitrary wave generator is used for generating a pulse time sequence of the pulsed light. According to the invention, ultra-cold atoms with lower temperature are utilized, so that a larger interference area and higher angular velocity sensitivity can be realized in a smaller volume, and the sensor is suitable for a moving carrier.

The application relates to a method for regulating the thermal conductivity of a nanometer semiconductor interface in contact and non-contact states, which comprises the following steps: (1) establishing a molecular dynamics thermal transport model composed of a hot region A and a cold region B; (2) performing molecular dynamics simulation and data processing: comparing the interface thermal conductivities under different twist angles in the contact state and the non-contact state to determine the dependence of the interface thermal conductivity on the twist angle; in the contact state, comparing the overlapping areas of the phonon state density at the contact interface under different twist angles to determine the influence of the overlapping area of the phonon state density on the thermal transport of different interface twist angles; in the non-contact state, comparing the force constants of the interface interaction potential and the LJ potential under different twist angles to determine the influence of the force constant on the thermal transport of different interface twist angles. The application realizes effective regulation of the ITC by regulating the twist angle, the normal load and the potential well depth, and provides an important basis for the thermal management of nanometer devices.

A simulation method of microvoid evolution in electric field induced interconnection wire based on phase field method, including constructing a phase field model of microvoid evolution in electric field induced face-centered cubic metal {110} orientation "bamboo joint" interconnection wire based on coupled Cahn-Hilliard equation and Allen-Cahn equation; constructing phase field variables of microvoid and grain boundary; constructing distribution functions of electric conductivity and atomic migration rate varying with spatial coordinates; constructing system free energy function F , introducing a free energy function of four double potential well function to modify Cahn-Hilliard equation and Allen-Cahn equation, obtaining phase field control equation of the system; determining conservative phase field order parameter, non-conservative phase field order parameter and electrostatic field parameter, obtaining microvoid evolution in transgranular interconnection wire by coupling phase field and electrostatic field. A direct quantitative tool for the reliability of integrated circuit interconnection wire is proposed.

The application discloses a holographic optical tweezers potential well stiffness phase control method, device and system, the method comprises the following steps: calculating the decomposition matrix formula, matrix expression and Hermite matrix expression according to the input system configuration parameters, expanding the stiffness coefficient of the optical trap through the Hermite matrix expression to obtain the stiffness coefficient expansion expression, optimizing the phase of the spatial light modulator based on the pixel symmetry rule to obtain the optimized phase value, generating the control instruction through the optimized phase value and sending it to the spatial light modulator, and recalculating the coefficient value of the stiffness coefficient expansion expression, if the coefficient value or the optimization times meet the iterative optimization condition, return to execute the phase optimization step of the spatial light modulator. The above-mentioned phase control method can solve the Hermite matrix expression and the stiffness coefficient expansion expression according to the system configuration parameters, generate the control instruction to modulate the phase of the light beam, and improve the application effect of the phase of the potential well stiffness through phase iterative optimization.

This invention provides an image sensor, a pixel structure, and a method for manufacturing the same. The pixel structure includes a photoelectric conversion region disposed in a semiconductor substrate and a conductive plate disposed above it. The conductive plate covers a first region of the photoelectric conversion region and induces a hole accumulation layer on its surface by receiving a bias signal, achieving electrical pinning. A doped pinning layer is disposed in a second region outside the projection range of the conductive plate, achieving physical pinning, wherein the doping concentration of the surface doping profile of the first region is lower than that of the second region. Through the synergistic effect of electric field modulation and doping modulation, a stable potential distribution is formed on the surface of the photoelectric conversion region, effectively suppressing dark current. Because high-concentration doping is avoided in the first region, the impact of doping compensation on the potential well is reduced, thereby maintaining a large charge storage space even under pixel miniaturization conditions, improving the full-well capacity and the dynamic range and signal-to-noise ratio of the image sensor.

The invention discloses a photosensitive transistor and a display panel. The photo-transistor includes an active layer, a gate insulating layer, and a first transparent electrode layer. The active layer is arranged on the substrate, and a channel region is formed in the active layer. The gate insulating layer is arranged on the active layer and covers the channel region. The first transparent electrode layer is at least partially arranged on the gate insulating layer to form a gate of the photo-transistor, and the orthographic projection part of the channel region on the substrate falls into the orthographic projection of the gate on the substrate. Light to be detected irradiates the channel region through the first transparent electrode layer to form light sensing current. A channel region part located outside the orthographic projection of the grid electrode on the substrate can generate a potential well or a potential barrier under the bias voltage of the grid electrode, electron-hole pairs are excited after illumination so as to reduce the potential well or the potential barrier, and the light-sensitive current is further improved. The photosensitive transistor is manufactured by adopting a process compatible with the TFT-LCD, so that the photosensitive function of the TFT-LCD can be realized while the process efficiency is improved.

Provided is a photo sensor capable of maintaining the advantages and strengths of a conventional photo sensor having a transfer switch between a photodetector (PD) and a floating diffusion capacitor (CFD), while being able to read at a higher speed than conventional ones and further reducing power consumption. The semiconductor junction of the photodetector is completely depleted, and the potential energy curve of the electrons of the photodetector is negatively tilted toward the floating diffusion capacitor and is connected to the uppermost portion of the electron potential well of the floating diffusion capacitor while maintaining the negative tilt.

The invention discloses an efficient light-driven particle capture actuator based on a GO / PDMS-AuNBPs composite film, and belongs to the technical field of micro-nano control and biomedical engineering. The actuator aims at solving the problems that an existing light-driven particle capturing technology is low in photothermal conversion efficiency, depends on high-power laser, and is poor in thermal field stability and single in function. The core structure comprises a photo-thermal composite film and an optical fiber F-P sensing structure. The photo-thermal composite film is composed of a graphene oxide (GO) film and a polydimethylsiloxane (PDMS) film doped with gold nano bipyramid (AuNBPs). The optical fiber interference structure is formed by welding a single mode fiber (SMF) and a hollow fiber (HCF), and the end face of the HCF is coated with a photo-thermal composite film to construct a Fabry-Perot interference (FPI) microcavity; and the sensing unit realizes real-time monitoring of the capture state by monitoring the change of the reflection spectrum of the FPI microcavity. During working, the FPI microcavity plays a role in expanding a beam of a light field so as to improve the light field utilization rate of the GO film. PDMS regulation and control form an axisymmetric temperature potential well, and Marangoni force caused by temperature gradient drives particle capture. The lowest excitation power of the actuator is 11.9 mW, particles of 5-400 microns can be captured, and the actuator has low power consumption, high stability and biological compatibility and is suitable for living cell control, micro-reactor construction and micro-fluidic chip integration.