161 results about "Potential well" patented technology

The invention relates to the field of gravity measurement, and aims to provide a small-size high-precision gravimeter based on an anti-magnetic suspension principle. The gravimeter comprises a low-frequency magnetic potential well unit, a suspension mechanical oscillator unit, a displacement detection unit and a cavity enclosing unit, and lens groups of the low-frequency magnetic potential well unit, the suspension mechanical oscillator unit and the displacement detection unit are all located in a cavity of a heat preservation shell on the innermost side. According to the invention, a measurement environment without external influence can be provided for the displacement detection of the suspension oscillator, the adjustment of the frequency in the vertical direction in a magnetic suspension potential well is resisted, the movement of an object to be measured is reflected by the voltage fluctuation brought by the laser intensity change measured by the photoelectric converter, and the high-precision gravity measurement is realized; the vibrator adopts a magnetic suspension mode and does not make mechanical contact with the environment, and long-term irreversible deformation can be avoided; and a temperature control and magnetic shielding device or other auxiliary equipment with a large volume is not needed, so that the gravimeter is small in overall size, convenient to move, low in cost and beneficial to popularization.

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

The invention discloses a quantum correction method for drift diffusion transportation of a gallium nitride power device in advanced packaging and a three-dimensional integrated module electrothermal coupling simulation method. According to the method, a one-dimensional stationary Schrodinger equation and a two-dimensional Poisson equation are solved in a self-consistent mode, sub-band energy levels, corresponding wave functions and potential distribution in the quantum confinement direction are obtained, and the convergence of a self-consistent algorithm is improved by modifying the Poisson equation; quantum correction of the drift diffusion equation is realized by correcting the conduction band; starting from a quantum confinement effect and a drift diffusion transport theory, the quantum effect of two-dimensional electron gas in a triangular potential well formed by a gallium nitride polarization effect and a quantum correction method of a drift diffusion transport model are researched, and the steady-state operating characteristics of an advanced packaging power device containing the quantum effect are evaluated. And an electrothermal coupling simulation method of the device and the three-dimensional integrated module is further researched, the thermal management capability of the three-dimensional integrated module is evaluated, and the method has important application value.

A method and corresponding devices to reduce the presence of unwanted ions within the pseudo-potential well of the RF fields for inductively coupled plasma mass spectrometry is disclosed. This method reduces space-charge effects and leaves more room available for the ions of interest and, hence, leads to increased transmission of the desired ions into the mass analyzer. In the present invention, the space charge is reduced by adding a low-band resolving DC potential, or a fast sweeping resolving DC potential with a notch, or a fast constant resolving DC potential with a notch, or by adding auxiliary quadrupolar or dipolar RF potential to the quadrupole ion guide, such that all the unwanted ions will be outside the stable region and therefore ejected. This reduces the charge density in the ion beam and ameliorate space charge effects.

The invention relates to the technical field of quantum physics and quantum, in particular to a super-cold atom defect-free array generation method, which comprises the following steps: S1, capturing cold atoms by using a light potential well generated by a spatial light modulator to form an initial n * 2m array; s2, shooting an image of the initial array, preprocessing the image of the initial array, transmitting the preprocessed data to a neural network for identification, and outputting an atomic position matrix; s3, calculating a moving path from the n * 2m array to the target n * m defect-free array by using a moving algorithm according to the atomic position matrix; and S4, according to the moving path, the atomic position of each column or each row in the array is adjusted, and a final defect-free target array is obtained. According to the invention, the defect-free atom array can be efficiently generated. According to the invention, through combination of neural network identification, loading of the initial array by the spatial light modulator and optimization of atom movement, efficient conversion from the initial n * 2m atom array to the target n * m defect-free array is realized.

The invention discloses a double-cantilever-beam piezoelectric vibration energy collector based on an annular steady state, which comprises a piezoelectric transducer, an elastic cantilever beam, a magnet and a base, after the piezoelectric transducer is mounted on the elastic cantilever beam to form a double-layer composite cantilever beam, the magnet is mounted at the free end of the double-layer composite cantilever beam, nonlinear coupling is carried out through repulsive magnetic force, and the piezoelectric transducer is connected with the base. The two-dimensional annular potential well structure with the adjustable potential well is formed, and the energy collector can easily trigger large-amplitude inter-well movement through the potential well structure. Through the nonlinear coupling induced internal resonance effect, inter-well energy transfer and two-dimensional potential well modulation are realized, and vibration energy can be efficiently captured in a broadband without a large amount of energy input or a complex structure. According to the design, the collection efficiency of low-frequency, low-intensity and multi-direction environment vibration energy in a wide working bandwidth is good.

The invention relates to a method for regulating and controlling thermal conductivity of a nanometer semiconductor interface in contact and non-contact states. The method comprises the following steps: (1) establishing a molecular dynamics thermal transport model consisting of a hot area A and a cold area B; (2) executing molecular dynamics simulation and data processing: comparing interface thermal conductance at different torsion angles in a contact state and a non-contact state so as to determine a dependency relationship of the interface thermal conductance on the torsion angles; in the contact state, comparing the overlapping areas of the phonon state densities at the contact interface under different torsion angles, and determining the influence of the overlapping areas of the phonon state densities on heat transport of different interface torsion angles; and in a non-contact state, comparing the force constants of the interface interaction potential and the LJ potential at different torsion angles, and determining the influence of the force constants on heat transport in different interface torsion angle states. By regulating and controlling the torsion angle, the normal load and the potential well depth, effective regulation and control of the ITC are realized, and an important basis is provided for thermal management of a nano device.

The invention discloses a high-conductivity AlN / GaN heterojunction which sequentially comprises a sapphire substrate, an AlN buffer layer, a GaN channel layer and an AlN barrier layer from bottom to top. The total polarization intensity in an AlN material of the GaN channel layer is far greater than the total polarization intensity in a GaN material of the AlN barrier layer, net positive charges appear at an interface, the positive charges attract free electrons, a triangular potential well is formed on one side of GaN near the interface, the electrons are limited in the potential well by quantum, and high-density two-dimensional electron gas is formed. Polycrystal AlN is converted into single crystal AlN through magnetron sputtering in combination with a thermal annealing technology, so that the characteristic of small stress of the single crystal AlN is reserved, and two-dimensional electron gas can be formed at the interface of the AlN / GaN heterojunction.

The invention discloses an LED structure and a preparation method thereof, the LED structure comprises a substrate structure, a first semiconductor layer, a quantum well structure and a second semiconductor layer which are stacked in sequence, and the conduction types of the first semiconductor layer and the second semiconductor layer are opposite; the quantum well structure comprises a potential well layer and a barrier layer located on one side, far away from the substrate structure, of the potential well layer; wherein the potential well layer comprises a plurality of potential well sub-layers which are arranged in a stacked mode, the potential well layer comprises In components, the In components of at least three potential well sub-layers in the plurality of potential well sub-layers are different, and the light-emitting wavebands of the at least three potential well sub-layers corresponding to the different In components comprise a red light waveband, a green light waveband and a blue light waveband. According to the invention, the potential well sub-layers with different In components are integrated on the single-layer potential well layer for gathering, so that the luminous efficiency of the LED structure can be improved, light with different wave bands is emitted, and full-color display is realized.

The application discloses a heterojunction structure, a semiconductor device structure and a manufacturing method thereof. In the method, an intermediate structure layer material is formed between two semiconductor active layers. The intermediate structure layer material blocks the diffusion of metal elements between the two semiconductor active layers on one hand, and the energy band of the intermediate structure layer material has a lower potential barrier for electrons on the other hand, so that the electrons can freely migrate or massively tunnel between the two semiconductor active layers, thereby forming a more ideal heterojunction interface between the first active layer and the second active layer and obtaining a deeper heterojunction potential well. The semiconductor heterojunction is formed to be more ideal, so that the performance advantages of the heterojunction in a metal-oxide-semiconductor device can be truly utilized and exerted. The performance of existing high-mobility high-stability transistors or high-voltage diodes and other devices is improved.

A method for cooling at least one ion (8) within a capture potential of an ion trap (2), comprising: - capturing the at least one ion (8) in the capture potential, wherein the at least one ion (8) oscillates about a potential minimum of the capture potential between a first inflection point region (13) and a second inflection point region (14), - illuminating the at least one ion (8) with a laser beam in the first inflection point region (13) and / or the second inflection point region (14) for cooling the at least one ion, wherein the laser beam has a beam center characteristic of a peak intensity and the beam center is spaced from the potential minimum, and - decreasing a distance of the beam center from the potential minimum until the beam center overlaps with the potential minimum, for further cooling of the at least one ion. Furthermore, a system (1) is specified.

The application relates to the fields of semiconductor photoelectric devices and semiconductor display manufacturing, and particularly relates to a GaN-based Mini LED epitaxial structure and a preparation method thereof. In the preparation method, when an active region multi-quantum well layer is grown, the temperature of a reaction cavity is set to 800-950 DEG C, a well-barrier temperature difference is 100-150 DEG C, and a potential well layer and a potential barrier layer are alternately grown; when the potential well layer is grown, the pressure of the reaction cavity is 100-190 Tor, the rotating speed is 300-500 r / min, and the carrier gas is H2; when the potential barrier layer is grown, the pressure of the reaction cavity is 200-400 Tor, and the rotating speed is 600-700 r / min. The active region multi-quantum well layer is grown by adopting a slow-speed long-well fast-speed long-barrier method, the Stark effect can be effectively relieved, the stress is reduced, and the luminous efficiency is improved.

The application provides a method for regulating nerve cells based on photo-induced micro-nanometer oscillators and application thereof, and belongs to the technical field of nerve cell regulation. The method comprises the following steps: adding photo-induced micro-nanometer oscillators in an extracellular system of nerve cells, and constructing a first optical potential well by using an optical tweezer system; the first optical potential well captures the photo-induced micro-nanometer oscillators, and positions the photo-induced micro-nanometer oscillators beside the nerve cells; the optical tweezer system is used to periodically switch the laser beam between two preset positions, so that the photo-induced micro-nanometer oscillators vibrate. The application utilizes optical force to drive the photo-induced micro-nanometer oscillators to vibrate and generate local ultrasonic waves, and does not need gene modification or implantation of devices, and the spatial resolution can reach a sub-micron level, thereby solving the contradiction between precision, damage and applicability in the prior art, and providing a new tool for nerve regulation.

This invention provides a method for fabricating LED epitaxial wafers and a Micro-LED. The method involves fabricating a multi-quantum-well layer with a periodic stacked structure of InGaN / InN / AlGaN / GaN layers. The InGaN layer acts as a potential well layer, allowing electrons and holes to recombine and participate in light emission. The ultra-thin design improves polarization and reduces QCSE (Quantum Conversion Efficiency). Simultaneously, the ultra-thin design also reduces indium segregation caused by high In content. The InN layer enhances effective In incorporation, and sufficient NH3 further reacts with precipitated In atoms to form InN, resulting in effective incorporation. This improves the In content while maintaining crystal quality. Furthermore, the AlGaN layer acts as a high barrier layer, effectively confining electrons, while the GaN layer provides hole-rich channels, thereby improving luminous efficiency.

A quantum well structure, a preparation method thereof, and a light-emitting diode. The quantum well structure includes at least one quantum well and at least one first film layer. Each quantum well in the at least one quantum well includes a well layer and a barrier layer stacked on each other, and the well layer includes a first doping element. Each first film layer in the at least one first film layer includes a second doping element. The second doping element is used to adjust the doping amount of the first doping element in the well layer adjacent to the first film layer. The first doping element includes at least one of In and Al, and the second doping element includes at least one of Al, Mg, and Si. The first film layer can adjust (such as increase or inhibit) the content of the first doping element doped into the well layer when the well layer is formed through the catalytic action of the second doping element, so as to adjust the light-emitting efficiency of the quantum well and the wavelength of the emitted light as needed.

The application discloses a kind of space-time modulation spin-orbit coupling distribution structure method and device, and the device includes vacuum structure and laser generation structure;Vacuum structure is used to capture control supercold atomic gas and target supercold atomic gas, wherein there is spin-exchange interaction between control supercold atomic gas and target supercold atomic gas;Laser generation structure is used to generate multiple different laser beams in vacuum structure, to prepare the optical potential well of control supercold atomic gas, the density distribution of control supercold atomic gas is regulated, to generate the space-time modulation spin-orbit coupling intensity distribution in target supercold atomic gas.The density of control supercold atomic gas is directly regulated by optical potential well in the application, and the effective spin-orbit coupling in target supercold atomic gas is indirectly regulated, and the device structure provided by the application is simple and dynamically adjustable, and strong in applicability.

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN / Alx1Iny1Ga(1-x1-y1)N stack, where 0<x1≤1 and 0≤y1<1. An LED device including the multi-quantum well structure is also disclosed.

A process for depositing a nanolaminate on a surface of a flat substrate, the process comprising the steps of:-mounting the substrate on a substrate support in a peripheral region (R) of a holder rotatable about its central axis B in a vacuum process system, the receiver comprises at least one magnetron sputtering station, the sputtering target of which is mounted to and spaced apart from a sputtering source, and at least one plasma processing station having a plasma source, both the sputtering target and the plasma source being directed towards different portions of the peripheral area (R), the method comprises the steps of:-providing a holder,-evacuating a receiver,-rotating the holder around a central axis at a constant speed,-introducing a sputtering gas into the receiver, and-introducing a reaction gas directly into at least one of a sputtering station or a plasma station,-discharging and igniting a magnetron in the sputtering station and setting a magnetron power level (Pm), and-igniting the plasma and setting a plasma power level (Pp) of the plasma source in the plasma processing station,-successively exposing the substrate to a magnetron discharge by rotating the holder to deposit a high refractive index material layer LH, and to a processing plasma to produce a low refractive index material layer L1, wherein the rotational speed of the holder and the magnetron power level (Pm) are set such that the layer thickness dh of the well layer Lh of the high refractive index material is 0.1 < = dh < = 5 nm.

The invention discloses an ultra-cold atom differential interference gyroscope based on a time orbit potential well, and belongs to the field of ultra-cold atom and angular velocity measurement. The device comprises an optical platform, a cooling laser light source, a light trap light source, a Bragg pulse light source, a vacuum cavity, an arbitrary wave generator, a signal generator and six magnetic field coils. The vacuum cavity is positioned above the optical platform; the six magnetic field coils are located around the vacuum cavity and used for generating an alternating-current magnetic field. The signal generator is used for providing alternating current for the magnetic field coil; the cooling light is in three orthogonal directions, and two beams of opposite light are arranged in each direction; the Bragg pulse light is one-dimensional standing wave light; the light trap light and the Bragg pulsed light are two beams of orthogonal light, and the light beam directions of the light trap light and the Bragg pulsed light coincide; the arbitrary wave generator is used for generating a pulse time sequence of the pulsed light. According to the invention, ultra-cold atoms with lower temperature are utilized, so that a larger interference area and higher angular velocity sensitivity can be realized in a smaller volume, and the sensor is suitable for a moving carrier.

The application relates to a method for regulating the thermal conductivity of a nanometer semiconductor interface in contact and non-contact states, which comprises the following steps: (1) establishing a molecular dynamics thermal transport model composed of a hot region A and a cold region B; (2) performing molecular dynamics simulation and data processing: comparing the interface thermal conductivities under different twist angles in the contact state and the non-contact state to determine the dependence of the interface thermal conductivity on the twist angle; in the contact state, comparing the overlapping areas of the phonon state density at the contact interface under different twist angles to determine the influence of the overlapping area of the phonon state density on the thermal transport of different interface twist angles; in the non-contact state, comparing the force constants of the interface interaction potential and the LJ potential under different twist angles to determine the influence of the force constant on the thermal transport of different interface twist angles. The application realizes effective regulation of the ITC by regulating the twist angle, the normal load and the potential well depth, and provides an important basis for the thermal management of nanometer devices.

A simulation method of microvoid evolution in electric field induced interconnection wire based on phase field method, including constructing a phase field model of microvoid evolution in electric field induced face-centered cubic metal {110} orientation "bamboo joint" interconnection wire based on coupled Cahn-Hilliard equation and Allen-Cahn equation; constructing phase field variables of microvoid and grain boundary; constructing distribution functions of electric conductivity and atomic migration rate varying with spatial coordinates; constructing system free energy function F , introducing a free energy function of four double potential well function to modify Cahn-Hilliard equation and Allen-Cahn equation, obtaining phase field control equation of the system; determining conservative phase field order parameter, non-conservative phase field order parameter and electrostatic field parameter, obtaining microvoid evolution in transgranular interconnection wire by coupling phase field and electrostatic field. A direct quantitative tool for the reliability of integrated circuit interconnection wire is proposed.

The application discloses a holographic optical tweezers potential well stiffness phase control method, device and system, the method comprises the following steps: calculating the decomposition matrix formula, matrix expression and Hermite matrix expression according to the input system configuration parameters, expanding the stiffness coefficient of the optical trap through the Hermite matrix expression to obtain the stiffness coefficient expansion expression, optimizing the phase of the spatial light modulator based on the pixel symmetry rule to obtain the optimized phase value, generating the control instruction through the optimized phase value and sending it to the spatial light modulator, and recalculating the coefficient value of the stiffness coefficient expansion expression, if the coefficient value or the optimization times meet the iterative optimization condition, return to execute the phase optimization step of the spatial light modulator. The above-mentioned phase control method can solve the Hermite matrix expression and the stiffness coefficient expansion expression according to the system configuration parameters, generate the control instruction to modulate the phase of the light beam, and improve the application effect of the phase of the potential well stiffness through phase iterative optimization.

This invention provides an image sensor, a pixel structure, and a method for manufacturing the same. The pixel structure includes a photoelectric conversion region disposed in a semiconductor substrate and a conductive plate disposed above it. The conductive plate covers a first region of the photoelectric conversion region and induces a hole accumulation layer on its surface by receiving a bias signal, achieving electrical pinning. A doped pinning layer is disposed in a second region outside the projection range of the conductive plate, achieving physical pinning, wherein the doping concentration of the surface doping profile of the first region is lower than that of the second region. Through the synergistic effect of electric field modulation and doping modulation, a stable potential distribution is formed on the surface of the photoelectric conversion region, effectively suppressing dark current. Because high-concentration doping is avoided in the first region, the impact of doping compensation on the potential well is reduced, thereby maintaining a large charge storage space even under pixel miniaturization conditions, improving the full-well capacity and the dynamic range and signal-to-noise ratio of the image sensor.

The invention discloses a photosensitive transistor and a display panel. The photo-transistor includes an active layer, a gate insulating layer, and a first transparent electrode layer. The active layer is arranged on the substrate, and a channel region is formed in the active layer. The gate insulating layer is arranged on the active layer and covers the channel region. The first transparent electrode layer is at least partially arranged on the gate insulating layer to form a gate of the photo-transistor, and the orthographic projection part of the channel region on the substrate falls into the orthographic projection of the gate on the substrate. Light to be detected irradiates the channel region through the first transparent electrode layer to form light sensing current. A channel region part located outside the orthographic projection of the grid electrode on the substrate can generate a potential well or a potential barrier under the bias voltage of the grid electrode, electron-hole pairs are excited after illumination so as to reduce the potential well or the potential barrier, and the light-sensitive current is further improved. The photosensitive transistor is manufactured by adopting a process compatible with the TFT-LCD, so that the photosensitive function of the TFT-LCD can be realized while the process efficiency is improved.

The invention discloses an efficient light-driven particle capture actuator based on a GO / PDMS-AuNBPs composite film, and belongs to the technical field of micro-nano control and biomedical engineering. The actuator aims at solving the problems that an existing light-driven particle capturing technology is low in photothermal conversion efficiency, depends on high-power laser, and is poor in thermal field stability and single in function. The core structure comprises a photo-thermal composite film and an optical fiber F-P sensing structure. The photo-thermal composite film is composed of a graphene oxide (GO) film and a polydimethylsiloxane (PDMS) film doped with gold nano bipyramid (AuNBPs). The optical fiber interference structure is formed by welding a single mode fiber (SMF) and a hollow fiber (HCF), and the end face of the HCF is coated with a photo-thermal composite film to construct a Fabry-Perot interference (FPI) microcavity; and the sensing unit realizes real-time monitoring of the capture state by monitoring the change of the reflection spectrum of the FPI microcavity. During working, the FPI microcavity plays a role in expanding a beam of a light field so as to improve the light field utilization rate of the GO film. PDMS regulation and control form an axisymmetric temperature potential well, and Marangoni force caused by temperature gradient drives particle capture. The lowest excitation power of the actuator is 11.9 mW, particles of 5-400 microns can be captured, and the actuator has low power consumption, high stability and biological compatibility and is suitable for living cell control, micro-reactor construction and micro-fluidic chip integration.

The application belongs to the field of optoelectronic storage and neuromorphic devices, and discloses a vertical structure optoelectronic memristor transistor and a preparation method and application thereof. The device comprises, from bottom to top, a substrate, a source electrode, an optoelectronic semiconductor layer and a drain electrode; the optoelectronic semiconductor layer is provided with a permeable gate and a dielectric layer coated on the surface of the permeable gate. The application realizes the function of memristor by driving the channel defects to control the Schottky barrier through the source-drain voltage, and realizes the promotion of storage by using light to promote the trap capture and deepening of the potential well at the interface of the optoelectronic semiconductor layer / dielectric layer. At the same time, the vertical structure shortens the effective transmission distance of the optoelectronic semiconductor layer and improves the integration. Thus, the device supports the modes of optical readout and light-assisted writing under the action of light, and is suitable for application scenarios such as image sensing-storage integration, near-sensing computing, optical synapse and neuromorphic array.

A manufacturing method for the LED structure, including: growing a first conductive-type semiconductor layer on a substrate; growing an active layer on the first conductive-type semiconductor layer, where the active layer includes a potential well layer, an insertion layer and a potential barrier layer that are stacked, the insertion layer includes a first insertion layer and a second insertion layer that are stacked, a quantum confinement Stark effect is generated between the first insertion layer and the potential well layer, the materials of the potential well layer, the first insertion layer and the potential barrier layer are all group III-V semiconductor materials, and the material of the second insertion layer includes Si—N bonds for repairing V-type defects of the first insertion layer; and growing a second conductive-type semiconductor layer on the active layer, where the first conductive-type semiconductor layer and the second conductive-type semiconductor layer have opposite conductivity types.

The invention belongs to the technical field of semiconductor memories, and particularly relates to a charge over-injection memory based on a two-dimensional Dirac material. A channel material of the memory adopts a two-dimensional Dirac material with a conical energy band structure, and the electron affinity of the channel material is greater than that of a tunneling layer material; the electron affinity of the material of the charge storage layer is greater than the electron affinity of the tunneling layer and the barrier layer, and the forbidden bandwidth of the material of the charge storage layer is smaller than the forbidden bandwidth of the tunneling layer and the barrier layer; the tunneling layer, the charge storage layer and the barrier layer can form a potential well, so that charges can be kept in the charge storage layer for a long time after being injected into the charge storage layer from a channel; under the condition of proper external voltage, carriers are accelerated in the whole course in a channel and continuously obtain energy from an electric field so as to realize super injection of charges; and while the programming speed of hundreds of picoseconds is maintained, the data retention capability is improved to more than ten years. The power consumption of the memory caused by high frequency can be effectively reduced.

The invention relates to the technical field of particle manipulation, in particular to magnetic sensitive optical tweezers and a particle manipulation method. The optical tweezers comprise an excitation source module, a magnetic field excitation and particle capture module and a substrate; the excitation source module generates angular polarized light, the magnetic field is radially polarized, the electric field is tangentially polarized, and the cross section is axisymmetric; in the magnetic field excitation and particle capture module, a gold column serves as the center, an air ring is nested outside the gold column, a gold ring is nested outside the air ring, the gold column and the gold ring are made of metal materials, the air ring is of a hollow structure, and the module is integrated on a silicon dioxide substrate. Angular polarized light covers the outer surface of the gold column and the inner surface of the gold ring to excite loop current, a longitudinal magnetic field component (magnetic focusing) and a hollow tubular light beam (optical potential well) are generated, and micron-sized particle capture, magnetic screening and magnetic conductivity measurement are achieved. The optical tweezers break through the limitation of capturing distance, magnetic field dependence, structural complexity and wavelength adaptability of the existing optical tweezers, and an efficient and universal scheme is provided.

The invention belongs to the technical field of organic field effect transistors, and particularly relates to a high-mobility field effect transistor based on an organic double-quantum well structure and a preparation method of the high-mobility field effect transistor. The high-mobility field effect transistor comprises a grid electrode, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, the insulating layer is located between the grid electrode and the organic semiconductor layer, an OTS modification layer is arranged between the insulating layer and the organic semiconductor layer, and the organic semiconductor layer is composed of a C8-BTBT layer / (Pentaene layer / C8-BTBT layer) n and n = 2 in the direction from the grid electrode to the source electrode and the drain electrode. According to the organic double-quantum well composed of C8-BTBT and pentacene, a potential well is formed by alternating different energy gap materials, carriers are limited in a narrow energy band region, scattering is reduced, directional transportation is promoted, and the mobility of the transistor is greatly improved.