Nitride LED (light-emitting diode) structure and nitride LED structure preparing method

Abstract

The invention discloses a nitride LED (light-emitting diode) structure. A P-type doped InGaN/GaN superlattice structure is inserted between a multiple quantum well active layer and an electronic barrier layer so as to improve the hole concentration and reduce the dosage concentration of the P-type hole injection layer; the superlattice structure has polarization effect, thus being capable of improving the doping efficiency and reducing the P-type impurity concentration; and impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved. The invention also discloses a preparation method of the nitride LED structure, through inserting the P-type doped InGaN/GaN superlattice structure between the multiple quantum well active layer and the electronic barrier layer, the hole concentration can be improved, and the dosage concentration of the P-type hole injection layer can be reduced; since the superlattice structure has polarization effect, the doping efficiency can be improved and the P-type impurity concentration can be reduced; and the impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved.

Description

technical field [0001] The invention relates to the technical field of LED preparation, in particular to a nitride LED structure and a preparation method thereof. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers injected into the PN junction recombine with the majority carriers, releasing excess energy to cause photon emission, and the direct emission colors are red, orange, yellow, Green, blue, blue, purple light. [0003] With the development of nitride-based high-brightness LED applications, a new generation of green and environmentally friendly solid-state lighting sources-nitride LEDs has become the focus of attention. Group III nitride semiconductor materials mainly...

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Problems solved by technology

However, due to the high doping concentration requirements of Mg or Zn impurities (up to >10 19 cm -3 order of magnitude), so that during the use of the light-emitting device, a part of the Mg impurity will be diffused into the light-emitting layer of the active region as a non-radiative recombination center, thereby reducing the luminous efficiency of the device; therefore, how to effectively obtain the P-type nitrogen Chemical materials have become a technical problem that needs to be solved urgently in the industry

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