Nitride LED (light-emitting diode) structure and nitride LED structure preparing method

A technology of LED structure and nitride, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing the luminous efficiency of devices, and achieve the effects of improving internal quantum efficiency and luminous efficiency, improving doping efficiency, and reducing concentration.
CN102185057AInactive Publication Date: 2011-09-14ENRAYTEK OPTOELECTRONICS
2 Cites 31 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ENRAYTEK OPTOELECTRONICS
Publication Date
2011-09-14
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a nitride LED (light-emitting diode) structure. A P-type doped InGaN / GaN superlattice structure is inserted between a multiple quantum well active layer and an electronic barrier layer so as to improve the hole concentration and reduce the dosage concentration of the P-type hole injection layer; the superlattice structure has polarization effect, thus being capable of improving the doping efficiency and reducing the P-type impurity concentration; and impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved. The invention also discloses a preparation method of the nitride LED structure, through inserting the P-type doped InGaN / GaN superlattice structure between the multiple quantum well active layer and the electronic barrier layer, the hole concentration can be improved, and the dosage concentration of the P-type hole injection layer can be reduced; since the superlattice structure has polarization effect, the doping efficiency can be improved and the P-type impurity concentration can be reduced; and the impurity atoms are prevented from being diffused to the potential well, and the inner quantum efficiency and the luminous efficiency of the device can be improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of LED preparation, in particular to a nitride LED structure and a preparation method thereof. Background technique

[0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers injected into the PN junction recombine with the majority carriers, releasing excess energy to cause photon emission, and the direct emission colors are red, orange, yellow, Green, blue, blue, purple light.

[0003] With the development of nitride-based high-brightness LED applications, a new generation of green and environmentally friendly solid-state lighting sources-nitride LEDs has become the focus of attention. Group III nitride semiconductor materials mainly...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More