GaN-based HBT epitaxial structure for reducing electrical resistivity at base region and growing method

Abstract

The invention provides a GaN-based HBT epitaxial structure for reducing electrical resistivity at a base region and a growing method. The structure comprises a substrate, an n type collecting region prepared on the substrate, a p type component gradual-change base region prepared on the n type collecting region, and an n type emitter region prepared on the p type base region. On the basis of the special structural design, the electrical resistivity at a base region is substantially reduced, thereby improving the device performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, is suitable for GaN-based bipolar transistors (HBTs), and is a technology for reducing the resistivity of a base region by using the polarization effect of materials, which is beneficial to improving the performance of GaN-based HBTs. Background technique [0002] Wide bandgap GaN-based materials have become the third-generation semiconductor materials because of their high breakdown electric field, fast saturation speed, and high thermal conductivity. They are important materials for the development of high-temperature, high-power electronic devices and high-frequency microwave devices. In recent years, both GaN-based HFET and HBT have attracted many scholars to study. At present, GaN-based HFETs have achieved rapid development, and their cut-off frequency has exceeded 200GHz, and ultra-high voltage operation (above kilovolts) has been realized. Compared with GaN-based HFET, GaN-based HB...

AI Technical Summary

Problems solved by technology

This method is expected to solve the problem of high resistivity in the base region of GaN-based HBT

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