GaN-based HBT epitaxial structure for reducing electrical resistivity at base region and growing method

A technology of base area resistance and epitaxial structure, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of high resistivity of GaN-based HBT base area, and achieve the effect of increasing hole concentration and reducing base area resistivity

Active Publication Date: 2015-09-09
丽水中科半导体材料研究中心有限公司
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Problems solved by technology

This method is expected to solve the problem of high resistivity in the base region of GaN-based HBT

Method used

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  • GaN-based HBT epitaxial structure for reducing electrical resistivity at base region and growing method
  • GaN-based HBT epitaxial structure for reducing electrical resistivity at base region and growing method
  • GaN-based HBT epitaxial structure for reducing electrical resistivity at base region and growing method

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Embodiment Construction

[0027] see figure 1 As shown, the present invention provides a GaN-based HBT epitaxial structure that reduces the resistivity of the base region, including:

[0028] a substrate 1;

[0029] An n-type collector region 2, which is fabricated on the substrate 1 and has a thickness of 0.5-2.5um, is generally divided into two layers, a high-conductivity layer and a low-conductivity layer, which can be GaN material, AlGaN material, or AlGaN material with graded composition, wherein, when it is an AlGaN material with graded composition, the Al composition gradually decreases linearly along the direction of the polarization electric field, and the n-type collector region 2 is mainly used to collect electron current to realize device current or power magnification, etc.;

[0030] A p-type composition-graded base region 3, which is fabricated on the n-type collector region 2 with a thickness of 20200 nm, is a composition-graded InGaN material, and its composition x value linearly decr...

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Abstract

The invention provides a GaN-based HBT epitaxial structure for reducing electrical resistivity at a base region and a growing method. The structure comprises a substrate, an n type collecting region prepared on the substrate, a p type component gradual-change base region prepared on the n type collecting region, and an n type emitter region prepared on the p type base region. On the basis of the special structural design, the electrical resistivity at a base region is substantially reduced, thereby improving the device performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, is suitable for GaN-based bipolar transistors (HBTs), and is a technology for reducing the resistivity of a base region by using the polarization effect of materials, which is beneficial to improving the performance of GaN-based HBTs. Background technique [0002] Wide bandgap GaN-based materials have become the third-generation semiconductor materials because of their high breakdown electric field, fast saturation speed, and high thermal conductivity. They are important materials for the development of high-temperature, high-power electronic devices and high-frequency microwave devices. In recent years, both GaN-based HFET and HBT have attracted many scholars to study. At present, GaN-based HFETs have achieved rapid development, and their cut-off frequency has exceeded 200GHz, and ultra-high voltage operation (above kilovolts) has been realized. Compared with GaN-based HFET, GaN-based HB...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/737H01L29/10H01L29/20
CPCH01L29/1004H01L29/2003H01L29/66318H01L29/737
Inventor 张连张韵王军喜李晋闽
Owner 丽水中科半导体材料研究中心有限公司
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