Method for improving LED luminous efficiency by using three-dimensional polarized induction positive hole gas

A technology of polarization induction and luminous efficiency, which can be used in electrical components, circuits, semiconductor devices, etc., and can solve problems such as the difficulty of GaN on the N-polar plane

Inactive Publication Date: 2010-08-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the fly in the ointment is that it is difficult to obtain high-quality N-polar GaN

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  • Method for improving LED luminous efficiency by using three-dimensional polarized induction positive hole gas
  • Method for improving LED luminous efficiency by using three-dimensional polarized induction positive hole gas
  • Method for improving LED luminous efficiency by using three-dimensional polarized induction positive hole gas

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Embodiment Construction

[0023] see figure 1 As shown, the present invention provides a method for improving LED luminous efficiency by utilizing three-dimensional polarization-induced hole gas, comprising the following steps:

[0024] Step 1: Select a substrate 1, the substrate 1 is a sapphire substrate, a silicon substrate or a silicon carbide substrate;

[0025] Step 2: growing a low-temperature nucleation layer 2, a low-temperature buffer layer 3, a high-temperature n-type layer 4, an active region 5, a wide bandgap barrier layer 6, and a p-type layer 7 sequentially on the substrate 1 to form an epitaxial wafer; wherein The high-temperature n-type layer 4 is doped with Si, its growth temperature is 800-1200°C, and its thickness is 0.1-0.3um; the active region 5 is a double heterojunction structure, a single quantum well structure or a multi-quantum well structure , the number of multiple quantum wells is 1-15, the thickness of the well is 2-3nm, and the thickness of the barrier layer is 5-12nm; w...

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Abstract

The invention discloses a method for improving the LED luminous efficiency by using a three-dimensional polarized induction positive hole gas, which comprises the following steps of: firstly, selecting a substrate; secondly, growing a low-temperature nucleating layer, a low-temperature buffer layer, an n-type layer, an active area, a wide forbidden band barrier layer and a p-type layer on the substrate in turn to form an epitaxial wafer; thirdly, performing etching on one side on the epitaxial wafer to form a playing surface, wherein the etching depth reaches the surface of the n-type layer; fourthly, preparing an n electrode on the playing surface; and fifthly, preparing a p electrode on the p-type layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, can be applied to all GaN-based LEDs such as blue light, green light, purple light and ultraviolet light, and is a method for improving the luminous efficiency of the LED by using three-dimensional polarization-induced hole gas. Background technique [0002] Since Nakamura et al. developed the first InGaN / GaN DH blue LED in 1992, a wave of research on GaN-based LEDs has been set off worldwide. Especially in 1996, after Japan's Nichia Company reported that it had successfully developed a white light LED, a new generation of lighting industry revolution kicked off. At present, well-known LED lighting companies, such as Nichia in Japan, Cree in the United States, Osram in Germany, Philips, etc., have invested a lot of manpower and material resources in the research, development and production of LED lighting products. According to relevant statistics, lighting consumption accounts for about ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14
Inventor 张连丁凯王军喜段瑞飞曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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