418 results about "Luminous efficacy" patented technology

The present invention relates to a light emitting device comprising a plurality of electrically coupled light emitting elements, wherein each light emitting element has a luminous efficacy vs. current characteristic, wherein said luminous efficacy vs. current characteristic has a maximum luminous efficacy value and wherein at least one of said light emitting devices is operated at a current corresponding to a luminous efficacy value that is within 10% of said maximum luminous efficacy value. The present invention also relates to methods of making said light emitting device, to lamps comprising said light emitting device and to methods of operating said light emitting device.

The invention discloses a high efficiency incandescent and Compact Fluorescent (CFL) bulb replacement LED lamp having a good color reproduction. The LED light bulb includes two groups of semiconductor light emitters and a luminescent material to emit four different spectrums of light. The two groups of semiconductor light emitters are enclosed around an interior wall of the light bulb housing, which has a plurality of fins at an exterior surface for effective heat dissipation. A high reflective member having a dome shape in the center is disposed under the two groups of semiconductor light emitters to redirect the emission and excitation lights from the two groups of semiconductor light emitters and recycle the backscattered light for multi-spectrum light mixing. The LED-light bulb further includes a single power line connecting to the two groups of semiconductor light emitters and a high efficiency electrical AC/DC conversion and control device. The light bulb has a diffuser dome for an output window and a conventional Edison-mount screw-type light bulb socket, a conventional fluorescent tube coupler arrangement or a conventional halogen MR-16 socket arrangement connecting to an AC power base. If a voltage is supplied to the AC/DC conversion and control device, a mixture light from the diffuser dome produces a warm white light with a color rendering index of at least 85 and a luminous efficacy of at least 80 lumens per watt.

A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

The luminous efficiency and radiance of light emitting diodes (LEDs) fabricated from organic emissive materials can be increased by using a multilayer cathode including a low work function layer and a high work function high reflectivity layer, in combination with a high work function, high reflectivitity anode material in the device.

The invention provides a method which uses a graphic substrate to improve the illumination efficiency of a GaN-based efficiency, comprising the steps as follows: a silicon dioxide film is deposited on a sapphire substrate; a photoresist graphic array is optically etched; the photoresist graphic array is taken as a mask so as to etch the silicon dioxide film with the graphic structure; the silicon dioxide film with the graphic structure is taken as a mask so as to etch the sapphire substrate and the graphics is etched onto the sapphire substrate; the sapphire substrate is thoroughly cleaned so as to form a pyramid structure with triangular sections; a low-temperature nucleation layer grows on the graphic sapphire substrate; temperature is continuously increased on the low-temperature nucleation layer so as to grow an n-typed mixed GaN layer and an array structure which has low dislocation density and V-shaped holes on the surface; a multiple quantum well layer and a p-typed material layer required when the LED structure material grows continue to grow; furthermore, the final surface is led to still have the array structure with V-shaped holes.

The invention discloses a method to intelligent eliminating ghost. It includes the following steps: digitalizing the image processing signal; judging the image whether static according to the image signal; judging the last display time span whether exceeding the preset value; if the span time exceeding the preset value, supplying light emitting function recovering chance for the imate. Thus, the light emitting function of the high brightness area would maintain longer, and because naked eye is not sensitive to the small and slow change of location and brightness, it doesn't influence the visual effect and can effectively decrease the chance of having ghost. Thus, the using life of the monitor would be prolonged.

The invention discloses a method for enhancing the luminous efficiency of a multiquantum well of a semiconductor diode. A novel gradient growth method is adopted as a multiquantum well growth manner of an epitaxial wafer structure of a light emitting diode; in the multiquantum well structure, InGaN components in the first several periods are gradually increased, so that the stress generated in the growth process of suddenly transferring GaN to InGaN with high In components is eased, and thus the polarization effect is reduced, the crystal quality of the quantum well is improved, and the compounding possibility is increased. In addition, the thicknesses of barrier layers in the first several periods are gradually reduced, the speed of electrons and the traversing possibility of electrons can be reduced by the barrier layers with larger thickness, the traversing possibility of electron holes can be increased by the barrier layers with smaller thickness, so that the electrons and the electron holes are distributed more uniformly and the problem of the reduced efficiency under high current injection is avoided, and therefore the luminous efficiency of the multiquantum well is improved.

The invention relates to the field of transparent fluorescent ceramics of LEDs, and discloses a composite fluorescent transparent ceramic used for a white-light LED and adopting a garnet structure. The composite fluorescent transparent ceramic is prepared through tape casting and vacuum sintering; and the chemical composition of the transparent ceramic comprises N transparent ceramic phosphors or non-phosphor components with different LED light emitting properties, wherein N is larger than or equal to 2. The prepared composite fluorescent transparent ceramic is simple in structure, the packaging process is simplified, the white-light LED has high luminous efficacy, high color rendering index, high quantum efficiency and excellent temperature quenching performance, and the composite fluorescent transparent ceramic can be used for packaging various white-light LED devices.

The invention provides an LED epitaxial layer growth method for improving luminous efficiency and an LED epitaxial layer. A P type hole injection layer comprises a first double-layer unit and a second double-layer unit. The first double-layer unit comprises a first AlGaN layer and a first GaN layer, the thickness of the first AlGaN layer and the first GaN layer ranges from 2 nm to 5 nm, the ratio of the first AlGaN layer to the first GaN layer in one period ranges from 1:1 to 3:1, and the period ranges from 5 to 10. The second double-layer unit comprises a second AlGaN layer and a second GaN layer, the thickness of the second AlGaN layer and the second GaN layer ranges from 2 nm to 5 nm, the ratio of the second AlGaN layer to the second GaN layer in one period ranges from 1:1 to 3:1, and the period ranges from 5 to 10. The P type hole injection layer is formed by a P type AlGaN/GaN superlattice layer which grows at a low temperature and a P type AlGaN/GaN superlattice layer which grows at a high temperature, the Droop effect of an LED chip under the high current density condition is effectively reduced, injection efficiency of charge curriers is improved, and luminous efficiency of devices is improved.

A light device with integration sheet is disclosed, which comprises: a light source; and at least a sheet, each being disposed at the light emitting end of the light source and comprising a plurality of light diffusion zones; wherein each light diffusion zone has a plural arrays of microstructures arranged on the surface thereof, and each array of microstructures is capable of changing the diopter of the corresponding light diffusion zone. By controlling the distribution of the plural arrays of microstructures, the Gaussian distribution of the light source can be improved while collimating the scattered light beams to the intended illuminating area of the lighting device and diffusing the light beams emitting from the center of the light source to the same so that not only the luminous efficacy of the lighting device is enhanced, but also the uniformity of the illuminance of the lighting device is improved.

The present invention relates to a light emitting apparatus. According to one aspect of the present invention, the light emitting device comprises: a plurality of light emitting devices including a blue light emitting device emitting blue light and a UV light emitting device emitting ultraviolet light; and a wavelength conversion part arranged in the path of the light emitted from the plurality of light emitting devices, and provided with fluorescent substances to convert the wavelengths of the light emitted from the plurality of light emitting devices, wherein a fluorescent substance excited by and mixed with the blue light to obtain white light is arranged on a first area corresponding to the blue light emitting device, and at least a blue fluorescent substance is arranged on a second area corresponding to the UV light emitting device. When the light emitting apparatus according to the present invention is used, a combination of the light sources and the fluorescent substances within one module may be appropriately adopted to obtain both improved luminous efficacy and white light having a high color rendering index.

The invention relates to a high-pressure discharge lamp of the ceramic metal halide type of the Philips MasterColor series having a molybdenum coil wrapped around the discharge vessel and at least a portion of the electrode feed through means, and having power ranges of about 150 W to about 1000 W. Such lamps are provided with a discharge vessel which encloses a discharge space. The discharge vessel has a ceramic wall and is closed by a ceramic plug. An electrode which is located inside the discharge space is connected to an electric conductor by way of a leadthrough element. The leadthrough element projects through the ceramic plug with a close fit and is connected thereto in a gastight manner by way of a sealing ceramic. The leadthrough element has a first part which is formed by a cermet at the area of the gastight connection. In addition, the lamps display one or more and most preferably all of the following properties: a CCT (correlated color temperature) of about 3800 to about 4500K, a CRI (color rendering index) of about 70 to about 95, a MPCD (mean perceptible color difference) of about +10, and a luminous efficacy up to about 85-95 lumens/watt, a lumen maintenance of >80%, color temperature shift <200K from 100 to 8000, and lifetime of about 10,000 hours to about 25,000 hours. The invention also relates to design spaces for the design and construction of high power lamps and methods for construction of such lamps using the design spaces.

The invention relates to the field of organic polymer chemistry and discloses a T-chain unit phenyl-containing MTQ silicon resin and a preparation method thereof. The T-chain unit phenyl-containing MTQ silicon resin solves the problem that a MTQ silicon resin as a silicon rubber reinforcement filler leads to a large difference between refractive indexes of a packaging material and a LED chip because of a small refractive index of the MTQ silicon resin and thus optical efficiency of a semiconductor lighting device is reduced. The preparation method comprises that tetraethoxysilane as a Q chain unit source, phenyltrimethoxysilane as a T chain unit source, hexamethyldisiloxane as an M chain unit source and 1,3-divinyltetramethyldisiloxane as an M chain unit source undergo a co-hydrolytic condensation reaction in the presence of hydrochloric acid as a catalyst to produce the T-chain unit phenyl-containing MTQ silicon resin. The T-chain unit phenyl-containing MTQ silicon resin can improve luminous efficacy of a semiconductor lighting device and improve mechanical properties of a packaging material. The preparation method allows mild reaction conditions, has simple processes and is suitable for large-scale industrial production.

A drive method and system for an LED display panel. The method comprises: converting an HDMI/DVI video signal into an RGB signal; dividing the RGB signal into N independent code streams and re-ranking same; and periodically switching a direct current provided to an LED display module (30) at least between a first current I₁ and a second current I₂. The system comprises an FPGA controller (20), and a video signal decoder (10), a first external memory (41), a second external memory (42) and an LED display module (30) which are respectively connected to the FPGA controller (20). The FPGA controller (20) comprises N LED drive modules (231-23N) which are connected in parallel. The drive method and system can enhance the luminous efficacy of an LED, and can also conduct linear dimming on the LED.

A diffusion plate of a multilayered diffusion particle layer belongs to the field of diffusion plates. The diffusion plate comprises a diffusion particle layer, a middle layer made of a transparent resin substrate, and a diffusion particle layer, namely the diffusion plate is in a sandwich structure. The basal bodies of two diffusion particle layers are made of high molecular light transparent materials; and diffusion particles and an ultraviolet absorber are dispersed in both of the two diffusion particle layers. At least one outer surface of the diffusion plate disclosed by the invention has a microstructure, so as to improve the luminous efficacy and the diffusion efficacy. Simultaneously, in consideration of the wider application range of the diffusion plate, the middle layer of the transparent resin substrate is manufactured into various curved surface shapes.

A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate.

The invention discloses a wall washing lamp lens which comprises a lens body and a lens base supporting the lens body. The lens body comprises an inner surface receiving light emitted from a light source and an outer surface emitting light. The outer surface comprises a first curved face, a second curved face and a third curved face, wherein the first curved face is used for totally reflecting light to a wall washing face, the second curved face is used for refracting the light to the wall washing face, and the third curved face is used for totally reflecting the light to the wall washing face. The first curved face and the second curved face are both formed in the mode that a continuous curve rotates around the Y-axis by 180 degrees. The third curved face is formed in the mode that a continuous curve rotates around the Y-axis by -180 degrees. The invention provides the wall washing lamp lens, a light-emitting module provided with the wall washing lamp lens and a wall washing lamp. Due to combined action of the three curved faces, stray light can be reduced, and luminous efficacy is improved. The whole lens does not need to deflect to achieve polarization and uniform distribution of the illumination of the wall washing face, and the situation that the portion, near the lamp, of the wall washing face and the portion, far away from the lamp, of the wall washing face sharply attenuate is avoided.