425 results about "Luminous efficacy" patented technology

A color OLED device is described having one or more pixels, at least one pixel comprising: four or more light-emitting elements, each light-emitting element comprising one or more layers of electroluminescent organic material producing a broadband light having a variable frequency-dependent luminous efficacy emission spectrum, and each light-emitting element further comprising a filter for filtering the broadband light and emitting a different color of light; wherein the different colors of light emitted by three of the light-emitting elements specify a first color gamut of the OLED device, and an additional one or more of the light-emitting elements emit at least one additional different color of light and wherein the frequency range of the filter of the additional light emitting element is matched to a portion of the broadband light frequency range having a radiant intensity greater than the radiant intensity of the frequency range of at least one of the filters of the three light-emitting elements specifying the first color gamut of the OLED device, and the additional one or more light emitting elements having luminous efficiency greater than that of at least one of the three light emitting elements specifying the first color gamut.

A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate.

Provided is an organic electroluminescent element having a light-emitting layer that can be formed by a wet process and has excellent electron-injection properties, electron-transport properties, endurance, and luminous efficacy. Also provided is a novel alcohol-soluble phosphorescent material suitable for use in the manufacture of the aforementioned organic electroluminescent element. The provided organic electroluminescent element (1) has a plurality of organic-compound layers (4, 5, 6) laminated between an anode (3) and a cathode (7). A hole-transport layer (5) comprises an organic compound that is insoluble in alcohol-based solvents. A light-emitting layer (6), which is formed by a wet process so as to contact the hole-transport layer (5) on the side thereof that faces the cathode (7), contains: a host material comprising a phosphine oxide derivative that is soluble in alcohol-based solvents; and a guest material that is soluble in alcohol-based solvents and can emit light upon electrical excitation.