58 results about "Luminous efficacy" patented technology

An illumination light source and an illumination device. The illumination light source comprises at least one light-emitting diode chip (100) that emits light of at least two wavebands; the emitted light at least comprises a plurality of wavelengths in a waveband of 420-740 nm, has spectral continuity, and at least comprises two characteristic wavelengths, the two characteristic wavelengths comprising at least one wavelength of 470-520 nm and at least one wavelength of 540-600 nm. The illumination light source using the light-emitting diode chips (100) capable of emitting light of at least two wavebands has full-spectrum continuity and a high color rendering index, thereby providing a high degree of color fidelity of objects at night and improving the recognition capability of night travelers; and the illumination light source further has a plurality of characteristic wavelengths on the basis of the full spectrum, such that the illumination light source has the characteristics of high photopic and scotopic luminous efficacy, high road surface reflectance, high penetration through rain, fog, and haze, and improved alertness, outdoor illumination safety is comprehensively considered, and night travel safety is guaranteed.

A bio-friendly light spectrum LED light source for work and office environments, and a manufacturing method therefor. The bio-friendly light spectrum LED light source for work and office environments comprises a plurality of LED wafers, a mount (15), and a fluorescent adhesive (16); the mount is provided with a bowl cup (14), and positive and negative electrodes (10); the plurality of LED wafers are all arranged in the bowl cup, and are connected to the positive and negative electrodes by means of gold wire bonding; the fluorescent adhesive is applied to each LED wafer; the plurality of LED wafers include a first LED wafer (11), a second LED wafer (12), and a third LED wafer (13). The color temperature of the bio-friendly light spectrum LED light source for work and office environments is 4,800-6,300K, a color temperature value point is controlled between a Duv=0.01 curve and a Duv=0.001 curve, the luminous efficacy of radiation (LER) of the light source is higher than the LER of sunlight having the same color temperature by 3% or above, the S / P ratio and M / P ratio of the light source are basically equal to the S / P ratio and M / P ratio of the sunlight having the same color temperature, and the spectrum similarity index (SSI) (480-830nm) of the light source and the sunlight having the same color temperature is greater than 95.

The utility model relates to the field of lighting, and discloses an LED light source device and lighting equipment. The white ink layer is positioned on the upper surface of the substrate; mounting holes are distributed in the white ink layer; the LED chip is positioned on the upper surface of the substrate and is electrically connected with the substrate through the mounting hole; the white glue reflecting layer is positioned on the surface of the white ink layer and is positioned around the LED chip; and the fluorescent colloid is positioned on the surface of the white glue reflecting layer and covers the LED chip. The white glue reflecting layer is located on the upper surface of the white ink layer, and the white glue reflecting layer has the characteristic of high temperature resistance, is not prone to discoloration at the high temperature and ensures long-term lighting effect stability, so that a good reflecting effect can be achieved on light emitted by the LED chip, the lighting effect of the LED light source device is improved, and the service life of the LED light source device is prolonged. And the problems of color temperature dispersion and poor color consistency can be solved, and the chromaticity stability is improved.

This invention relates to the field of semiconductor optoelectronic devices, specifically disclosing a Micro-LED epitaxial structure, which sequentially comprises a substrate, a buffer layer, an N-type GaN layer, a stress relief layer, a first superlattice layer, an electron modulation layer, a light-emitting layer, a hole modulation layer, a second superlattice layer, and a P-type GaN layer; the stress relief layer includes In... α Ga 1‑α The N-layer and the first GaN layer; the first superlattice layer includes In. x Ga 1‑x N-layer and second GaN layer; electronic modulation layer includes Al a Ga 1‑a The light-emitting layer includes an N-layer and a third GaN layer, and the light-emitting layer includes an In layer. y Ga 1‑y N quantum well layer and quantum barrier layer, hole modulation layer including Al b Ga 1‑b N layers and In c Ga 1‑c N-layer, the second superlattice layer includes In z Ga 1‑z The N-layer and the fourth GaN layer have the following parameters: y > x > α, y > z, a ≥ b, and the number of periods in the light-emitting layer is ≤ 8. Implementing this invention can improve the luminous efficacy and luminous uniformity of Micro-LEDs at low current densities.

The invention discloses an LED chip with a bionic structure and a manufacturing method thereof. The LED chip with the bionic structure comprises a substrate, a P electrode, a P-GaN layer, an MQW layer, an N-GaN layer and an N electrode which are sequentially stacked from bottom to top, a first vertical hole is formed in the P electrode, a second vertical hole is formed in the P-GaN layer, a third vertical hole is formed in the MQW layer, a fourth vertical hole is formed in the N-GaN layer, the first vertical hole, the second vertical hole, the third vertical hole and the fourth vertical hole are communicated with one another, and the cross sections of the first vertical hole, the second vertical hole, the third vertical hole and the fourth vertical hole are all regular hexagons. The plurality of first vertical holes, the plurality of second vertical holes, the plurality of third vertical holes and the plurality of fourth vertical holes are distributed in a hexagonal honeycomb network to form a vertical hole group; a P layer transverse hole is formed in the P-GaN layer, an N layer transverse hole is formed in the N-GaN layer, and insulating heat conduction materials are arranged in the first vertical hole, the second vertical hole, the third vertical hole, the fourth vertical hole, the P layer transverse hole and the N layer transverse hole. The invention aims to solve the technical problem that the performance of an LED chip is limited due to the fact that high luminous efficiency and efficient heat dissipation are difficult to consider at the same time in the prior art.

This invention discloses an LED spectral distribution optimization design method and an LED light source. The design method includes the following steps: S1, establishing a basis function library based on the Gaussian emission spectral function of phosphor materials; S2, defining the full spectral distribution function and optimization variables of the phosphor mixture; S3, constructing a comprehensive evaluation function and constraints based on color temperature, spectral efficacy, and color rendering index; S4, applying simulated annealing algorithm for optimization, aiming to minimize the comprehensive evaluation function, and globally optimizing the basis function weight vector w; S5, adjusting the comprehensive evaluation function and constraints and iteratively optimizing. This design method is applicable to the spectral control of white LEDs excited by multi-color phosphors, and can achieve synergistic optimization of color rendering index, color temperature accuracy, and luminous efficacy over a wide color temperature range, significantly improving the overall light quality and design efficiency of the LED light source.

The invention relates to a fluorescent body structure for a high-luminous-efficiency product and application of the fluorescent body structure, and the fluorescent body structure solves the problem that light measured by an LED flip chip cannot be effectively output due to the fact that a light reflection shell (white glue) is in direct contact with the side wall of the LED flip chip. The fluorescent body is wrapped by the light reflection shell to form a corresponding angle, so that measured light is effectively reflected, and the lighting effect of a product is improved by 3%.

At least one embodiment of the present disclosure provides a light-emitting element and a display substrate. The light-emitting element comprises a first electrode, a light-emitting functional layer and a second electrode, which are sequentially stacked in a first direction, wherein the light-emitting functional layer comprises a first organic layer, a first light-emitting layer, a second organic layer, a second light-emitting layer, a spacer layer, a third light-emitting layer and a third organic layer, which are sequentially stacked in the first direction; the material of the second light-emitting layer comprises a first electron-blocking material and a light-emitting material doped in the first electron-blocking material, the light-emitting material comprising at least one of a platinum complex and an iridium complex; and the material of the spacer layer comprises a second electron-blocking material. In the embodiments of the present disclosure, the original phenomenon of exciton quenching caused by an excessively high concentration of excitons on an interface of the second light-emitting layer is eliminated, and therefore the light-emitting element can emit light in the middle region of the second light-emitting layer, thereby improving the luminous efficacy of the light-emitting element and prolonging the service life of a display substrate.

The present disclosure relates to organic electroluminescent compounds, multiple host materials, and an organic electroluminescent device comprising these. By incorporating a specific combination of compounds according to the present disclosure as multiple host materials, or by incorporating compounds according to the present disclosure, organic electroluminescent devices with improved driving voltage, luminous efficacy, and / or lifetime characteristics compared to conventional organic electroluminescent devices can be provided.

This invention discloses an AlGaN-based deep ultraviolet (DUV) LED epitaxial wafer and its fabrication method. The AlGaN-based DUV LED epitaxial wafer comprises: a silicon carbide substrate, an Ag layer deposited on the silicon carbide substrate, an AlN buffer layer grown on the Ag layer, an AlGaN buffer layer grown on the AlN buffer layer, an undoped AlGaN layer grown on the AlGaN buffer layer, an n-type doped AlGaN layer grown on the undoped AlGaN layer, an AlGaN multi-quantum-well layer grown on the n-type doped AlGaN layer, an electron blocking layer grown on the AlGaN multi-quantum-well layer, and a p-type doped GaN thin film grown on the electron blocking layer. This invention eliminates the need for a stripping process, significantly improving external quantum efficiency; it reduces dislocation formation, increases carrier radiative recombination efficiency, and yields DUV LEDs with high thermal conductivity, high electrical conductivity, and high luminous efficacy; the DUV LED exhibits more uniform current distribution, improving light extraction efficiency, while also possessing good heat dissipation capabilities; the fabrication process is simple and reproducible.

A yellow-light illumination device (1) capable of effectively improving luminous efficacy, comprising a base (11), a lampshade (12) and a light source (13). The lampshade (12) is arranged on the base (11), such that an accommodating space is formed between the lampshade (12) and the base (11). The lampshade (12) is made of plastics and orange organic azo dyes. The light source (13) is arranged on the base (11) and is located in the accommodating space, and comprises a blue light chip (131) and fluorescent powder (132). The fluorescent powder (132) comprises red powder and yellow powder. The weight percentage of the red powder ranges from 2% to 8%, and the weight percentage of the yellow powder ranges from 92% to 98%.

This application provides a method and system for cross-protocol lighting device synchronization control, an electronic device, and a medium. The method includes: dividing the communication link between the bridge-end device and the lighting device into four logical stages; the four logical stages include a device discovery stage, a queue scheduling stage, a wireless transmission stage, and a device execution stage; dynamically allocating jitter delay budgets for each logical stage; generating corresponding lighting control commands based on user-triggered lighting scenes; the lighting control commands include a target execution time point, a luminous efficacy transition curve, and the jitter delay budget; and sending the lighting control commands to the lighting device based on a reliable multicast protocol. This application, by employing a refined delay budget allocation mechanism and combining it with closed-loop feedback control of execution errors, can maintain high-precision, smooth, and stable synchronization between multi-protocol lighting devices under adverse conditions such as complex electromagnetic environments, high network loads, or sudden interference.

The present disclosure relates to an organic electroluminescent compound, several host materials, and an organic electroluminescent device comprising these. By incorporating the organic electroluminescent compound and the several host materials, an organic electroluminescent device can be provided which exhibits improved luminous efficacy and / or lifetime characteristics compared to conventional organic electroluminescent devices.

Disclosed are an organic light emitting device and a display device using the same in which a light emitting layer includes a host and a plurality of dopants. In the light emitting layer, energy is transferred from a host and other dopants to one dopant by energy transfer system, thus it is possible to increase luminous efficacy of a single color and to increase lifetime of emission.

The present invention relates to an organic compound, an organic light-emitting diode including the organic compound, and a display device including the organic light-emitting diode. More particularly, the present invention relates to an organic compound including a compound represented by Chemical Formula 1 and being capable of improving luminous efficacy, thermal stability, and lifespan properties; an organic light-emitting diode including the organic compound; and a display device including the organic light-emitting diode.

Lighting fixture (100A, 100B) for producing a luminous efficacy, wherein the lighting fixture comprises: a control circuit board (175) comprising an opening (200) and a first number of circuit board layers, the control circuit board having a first area; and a light module circuit board (110A, 110B) configured to be electrically connected to the control circuit board at the opening, the light module circuit board comprising a second number of circuit board layers, the light module circuit board having a second area, the light module circuit board comprising a plurality of light-emitting diodes, LEDs, (300) and a plurality of conductor tracks (205, 305), the light module circuit board being configured to be directly coupled to the control circuit board via the plurality of conductor tracks such that the plurality of LEDs are positioned in the opening and light from the plurality of LEDs passes through the opening; wherein the multitude of LEDs are electrically connected to the first and second conductor tracks from the multitude of conductor tracks, and the first and second conductor tracks from the multitude of conductor tracks are electrically connected to the first and second complementary conductor tracks on the control circuit board; where the first number of printed circuit board layers is greater than the second number of printed circuit board layers, and where the first area is larger than the second area.

The LED lamp bead comprises an LED support, an electric conductor and a plurality of LED wafers, the LED support comprises a cofferdam, a first bonding pad and a second bonding pad, and the first bonding pad and the second bonding pad are arranged at the bottom of the cofferdam at intervals; the electric conductor is arranged on the first bonding pad and is electrically connected with the first bonding pad; the LED wafers are arranged on the first bonding pad, a conductor is arranged between at least one group of adjacent two LED wafers, at least one LED wafer is welded and conducted with the second bonding pad through a first crystal wire, at least one LED wafer is electrically conducted with the conductor through a second crystal wire, and the LED wafers are connected with the first bonding pad without crystal wires. The LED lamp bead is novel in structure, no crystal wire is needed between the LED wafer and the first bonding pad, and therefore on the premise that the size of the LED support is not changed, the crystal fixing area originally occupied by the crystal wire is completely released to the LED wafer, the maximum arrangement of the size of the LED wafer is achieved, and the lighting effect of the single LED lamp bead is remarkably improved.

The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent material, as described in Formula 1, and to an organic electroluminescent device comprising these. By incorporating the compound according to the present disclosure, an organic electroluminescent device with a lower driving voltage, higher luminous efficacy, and / or improved lifetime compared to the prior art can be provided.

This invention discloses a Mn 4+ This invention relates to a surface treatment method for fluoride-doped red phosphors, belonging to the field of inorganic luminescent materials technology. The method first involves treating Mn with a fluoroniobic acid solution. 4+ Fluoride-doped red phosphors create Mn-depleted structures on the phosphor surface. 4+ A layer is added to improve its moisture resistance; then, hydrothermal treatment under a specific solution environment is used to improve the surface crystallization quality of the fluoride phosphor, further enhancing its moisture resistance. The surface-modified Mn obtained by the method of this invention... 4+ Fluoride-doped red phosphors not only maintain their original high luminous efficacy, but also have significantly improved moisture resistance, and can maintain high luminous efficiency for a long time even in high temperature and high humidity environments.

The present application discloses a projection display system, which includes: a light source component, a wavelength adjustment component, and a modulation component. The light source component is used to emit projection light; the wavelength adjustment component is arranged in the optical path of the projection light and is used to adjust the spectrum of the projection light so that the ratio of the luminous efficacy of the adjusted projection light to the luminous efficacy of the monochromatic light corresponding to the main wavelength of the projection light is greater than a preset ratio, and the color gamut of the adjusted projection light meets the preset color gamut coverage; the modulation component is arranged in the output optical path of the wavelength adjustment component and is used to perform image modulation on the light emitted by the wavelength adjustment component and output corresponding image light to form a projected image. Through the above method, the present application can balance the brightness and color gamut of the projection display system.

Provided in the present invention are a boron-nitrogen-containing organic compound and the use thereof in an organic electronic device. The boron-nitrogen-containing organic compound has a structure as represented by general formula (I) or general formula (II). The boron-nitrogen-containing organic compound is applied to an organic electronic device; and a device using the boron-nitrogen-containing organic compound has high luminous efficacy, a narrow FWHM as shown in its luminescence spectrum, a relatively long service life, etc.

An LED chip and its fabrication method are disclosed. The LED chip includes a substrate, an epitaxial stack disposed on one side of the substrate, a transparent conductive layer, a first electrode, and a second electrode. The epitaxial stack includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The transparent conductive layer is disposed on the side of the second type semiconductor layer away from the active layer and includes an interface layer and a capping layer sequentially stacked along the direction away from the active layer. The work function of the interface layer is greater than the work function of the capping layer. The first electrode is electrically connected to the first type semiconductor layer. An extended electrode of the second electrode is disposed on the side of the second type semiconductor layer away from the active layer, and the transparent conductive layer covers the extended electrode. The top electrode of the second electrode is disposed on the side of the transparent conductive layer away from the extended electrode and is conductive to the extended electrode through the transparent conductive layer, or the top electrode is partially embedded in the transparent conductive layer and contacts the extended electrode to conduct electricity. This LED chip improves the uniformity of current distribution and enhances luminous efficacy by optimizing the lateral expansion and vertical injection of current.

This invention discloses a trapezoidal composite fluorescent glass-ceramic for laser illumination and its preparation method. The composite fluorescent glass-ceramic comprises a trapezoidal fluorescent glass and a high thermal conductivity ceramic coating on the outer layer of the fluorescent glass. The trapezoidal fluorescent glass is formed by melting and casting waste glass doped with luminescent ceramic powder, red phosphor, and high thermal conductivity powder. The composite glass-ceramic prepared by this invention achieves high-brightness white light emission under excitation by a 460nm blue LD chip, with a color rendering index of 82-91, and can withstand an excitation power density of 40W / mm². 2 ~55W / mm 2 Its luminous efficacy is 206–265 lm / W, and its thermal conductivity at room temperature is 18–29 Wm. ‑1 k ‑1 .

A light emitting device comprising: a first LED for generating light of a first chromaticity in a first chromaticity region; a second LED for generating light of a second chromaticity in a second chromaticity region; and a third LED for generating light of a third chromaticity in a third chromaticity region, wherein the device is for generating light with a CCT that is tunable within a range of CCTs from 1800K to 6500K and has a chromaticity that is within 5 SDCM of the black body locus; wherein the device has a luminous efficacy of at least 95 lm / W; and wherein the light generated by the device comprises a combination of light generated by the first, second, and third LEDs and wherein the CCT is tunable by controlling power to the first, second and third LEDs.

Provided in the present invention are a boron-nitrogen-containing organic compound and the use thereof in an organic electronic device. The boron-nitrogen-containing organic compound has a structure as represented by general formula (I) or general formula (II). The boron-nitrogen-containing organic compound is applied to an organic electronic device; and a device using the boron-nitrogen-containing organic compound has high luminous efficacy, a narrow FWHM as shown in its luminescence spectrum, a relatively long service life, etc.

The invention discloses an LED epitaxial wafer structure and a preparation method thereof, and relates to the technical field of semiconductor photoelectric devices. The LED epitaxial wafer structure comprises a substrate, a buffer layer, an N-type limiting layer, an N-type barrier layer, an active layer, a P-type barrier layer, a P-type limiting layer, a P-type window layer and a P-type contact layer, the active layer comprises GaInP quantum dot layers and barrier layers, wherein the GaInP quantum dot layers and the barrier layers are periodically and alternately stacked. The GaInP quantum dot layer contains GaInP quantum dots, the density of the GaInP quantum dots is 1 * 10 < 9 > / cm < 2 > to 1 * 10 < 11 > / cm < 2 >, and the diameter of the GaInP quantum dots is 5 nm to 40 nm. According to the invention, the dislocation density can be effectively reduced, and the carrier limiting capability is improved, so that the internal quantum efficiency is improved, and the luminous efficiency of an LED chip is finally improved.

This utility model discloses an LED lighting device with adjustable luminous efficacy, relating to the field of LED lighting technology. It includes a lamp housing, with a connecting wire installed at the top and a junction box installed on the side of the connecting wire. A lampshade is engaged with the lower end of the lamp housing. An LED bead is disposed at the lower end of the lamp housing, and a rotating engaging mechanism for adjusting the angle of the LED bead is located at the middle position of the top of the lamp housing. This LED lighting device with adjustable luminous efficacy allows for adjustment of luminous efficacy by rotating a knob, which drives a limiting block to rotate synchronously. Since the limiting block is engaged in the middle position inside the LED bead, the knob synchronously drives the LED bead to rotate. By utilizing the different angles at which light passes through the lens as the LED bead rotates above it, the luminous efficacy can be adjusted, facilitating quick and easy adjustment of the lighting effect according to needs.

This invention belongs to the field of deep learning and discloses an intelligent scheduling method and system for reducing the dynamic luminous efficacy and power consumption of dual-crystal LEDs. The method includes: constructing a topological connection model reflecting the internal structure of the chip; establishing a thermodynamic state equation based on non-equilibrium thermodynamics and mapping it to a physical information neural network; using a graph neural network to model thermally coupled nodes to predict the non-equilibrium heat distribution field; and deriving and executing a current phase difference scheduling strategy capable of achieving thermal cancellation effects. The system includes modules for data acquisition, topology modeling, physical calculation, neural network processing, intelligent scheduling, and drive execution. By integrating thermodynamic laws and deep learning technology, this invention achieves refined control and predictive thermal control of thermal entropy flow, improving the transient thermal stability and electro-optical conversion efficiency of the system, and reducing redundant power consumption.

An information projection display device according to the present disclosure comprises: a light source having a plurality of light-emitting elements; a light source drive unit that generates a drive signal causing the plurality of light-emitting elements to emit light; an optical system that receives light from the light source and projects the light; a shift unit that varies the position of the projected light; a signal processing unit that determines an operating state of the plurality of light-emitting elements and outputs a signal to the light source drive unit; and a shift signal generation unit that generates a drive signal for the shift unit. An arrangement of the projected light and an arrangement of the plurality of light-emitting elements correspond to one another. Let a prescribed projection position be the position at which the light of a first light-emitting element with lower luminous efficacy than another light-emitting element is projected. Among the other light-emitting elements, let a second light-emitting element be one or more light-emitting elements that emit light at the prescribed projection position due to the shift unit varying the position of the light, and let a third light-emitting element be a light-emitting element that emits light at a position different from the prescribed projection position. Given the above, the intensity of light emitted by the second light-emitting element is higher than the intensity of light emitted by the third light-emitting element.

The chromaticity and luminous flux output of a multicolor luminaire with multiple independent wavelength outputs is controlled by a controller that has fewer input channels than there are output channels. A trained neural network is used such that the multi-color wavelength settings of the luminaire produce the specified chromaticity and luminous flux output while optimizing luminous efficacy or color rendering capabilities, or satisfying other constraints applied to the luminaire.