38274results about How to "Improve yield" patented technology

A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Provided are an organic electroluminescence device and an aromatic amine derivative for realizing the device. The aromatic amine derivative improves the luminous efficiency of an organic electroluminescence device using the derivative, and its molecules hardly crystallize. The organic electroluminescence device has an organic thin film layer composed of one or a plurality of layers including at least a light emitting layer, the organic thin film layer being interposed between a cathode and an anode, and at least one layer of the organic thin film layer, especially a hole transporting layer contains the aromatic amine derivative alone or as a component of a mixture, so the organic electroluminescence device can be produced in improved yield, and has a long lifetime.

This invention discloses a two-layer gas inlet blow head of a metal organic chemical gas phase deposit device including a closed shell having an upper gas inlet cavity and a lower gas inlet cavity, an upper escape pipe communicating with the upper gas cavity and reaction chamber is set between the upper-middle and the base plate and a lower escape pipe communicating with a lower gas inlet cavity and the reaction chamber is set between the lower plate and base plate characterizing that diameter of the lower escape pipe is layer than the upper and the upper is put in the lower. A cooling cavity is designed, the first reaction gas enters into the reaction chamber at the substrate surface from the upper and lower escape pipes separately.

The present invention relates to a process for preparing compositions of high concentrations of omega-3 fatty acids from krill. Furthermore, the invention relates to a composition comprising high concentrations of omega-3 fatty acids, and a lipid fraction from krill comprising high amounts of fatty acids with chain length C14 and C16.

A needle aspiration biopsy device includes a syringe, a valve coupler for controlling a vacuum in the syringe barrel, and an anti-reflux head. The head includes a hub, defining a large collection well preferably several hundred micro liters in volume, and a needle mounted to the hub. A passageway is defined either by a contoured needle or a straight needle and an internal channel in the hub wall such that a proximal end of the passageway extends inside the hub and opens in spaced relation to a floor of the collection well. A method of biopsy using the device is also disclosed.

An atomizer and an electronic cigarette are provided. The atomizer includes: an atomizer cartridge; a liquid storage area arranged inside the atomizer cartridge; an electric heating element coiled spirally to form a plate-shape structure; and a first liquid guide cloth. The first liquid guide cloth is arranged covering an opening of the liquid storage area, and the electric heating element is laid on a side of the first liquid guide cloth away from the liquid storage area. With the first liquid guide cloth, the quantity of the cigarette liquid transferred to the electric heating element is ensured to be equable. The electric heating element is arranged along the transverse direction of the atomizer, thereby avoiding conventional problems of non-uniform smoke volume and burning-out of the liquid storage cotton due to gravity or vibration of the spiral coils.

The present invention relates to a semiconductor structure and a method for making the same. The method includes the following steps: (a) providing a first wafer and a second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the first wafer, so as to form a groove; (d) forming a through via in the groove; and (e) forming at least one electrical connecting element on the first wafer. Therefore, the wafers are penetrated and electrically connected by forming only one conductive via, which leads to a simplified process and a low manufacturing cost.

A surface mounting structure and a packaging method thereof comprises a chip, a first conducting wire and a second conducting wire. The two conducting wires instead of lead frame architecture of the prior art is that the lead frame and a bridge jumper connected with N junction and P junction instead of the two conducting wires. The two conducting wires are drawn out from a bottom of a package, and are pressed and bent to original surface of the surface mounting pins so as to increase space utilization rate. Thereby it is to improve a complicated lead frame architecture of the prior art, increase use space and simplify system design.

The invention provides a flexible display panel, a preparation method and display device thereof, and relates to the technical field of flexible display. The strain stressed in a vertical direction ofa signal outgoing line on the part located in a bending area can be reduced when the flexible display panel is bent, it is avoided that the signal outgoing line ruptures when bending, and the yield after products bend is improved. The flexible display panel comprises a flexible substratum substrate; the flexible substratum substrate comprises a first surface; the first surface is divided into a bent area; multiple bulges are arranged in the bent area on the first surface; and the signal outgoing line is located above the first surface and runs through the bent area. The preparation method isused for preparing the flexible display panel and the display device including the flexible display panel.

The invention relates to a boiling bed hydrogenation catalyst and a preparation method. The boiling bed hydrogenation catalyst of the invention is spherical shape which diameter is 0.1mm to 0.8mm, and has appropriate amount of additives and hydrogenation of metal components, and has reasonable hole distribution. The catalyst preparation method of the invention is spherical carrier impregnation, the process of spherical carrier preparation is following: making catalyst carrier raw material which is in appropriate temperature into appropriate size grain, then spheroidizing the grain, heating the conglobation and making them into spherical catalyst carrier. The process for making the catalyst carrier raw material into the appropriate size grain is that wet stock passes screen stencil by mechanical action and generates grain. Between the processes of the making grain and nodularization, granular material primely is placed for a period of time or operates in low-speed in nodularization device for a period of time. The catalyst of the invention appropriately conducts the boiling bed hydrogenation for heavy oil, residual oil.

The invention discloses an LED lamp filament illuminating strip and a preparation method therefor. The illuminating strip comprises LED chips in upper and lower rows, wherein all LED chips in the lower row are distributed at intervals, and all LED chips in the upper row are respectively connected between two adjacent LED chips in the lower row in a lap joint manner. The illuminating surfaces of the LED chips in the upper and lower rows are opposite to each other. The positive and negative electrodes of all LED chips in the upper row are respectively welded with the negative and positive electrodes of two adjacent LED chips, in lap joint connection with the LED chips in the upper row, in the lower row. The preparation method comprises the steps: coating solder paste on the positive and negative electrodes of all LED chips in the lower row; heating the solder paste and enabling the solder paste to be melted, welding the corresponding electrodes, coating the front and back surfaces of chip strips in series connection with fluorescent glue, and solidifying the fluorescent glue. The illuminating strip employs the chips which are not overlapped with each other, and the illuminating surfaces of the chips are arranged oppositely, thereby improving the light-emitting uniformity and facilitating heat dissipation. The wire crossing and tandem among chips is avoided, the packaging cost is reduced, and the yield of finished products is improved.

An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.

An LED lamp with lower manufacturing costs is disclosed. The LED lamp includes a lamp set, a plurality of light-emitting modules and a transparent cover. The lamp set having an accommodating space is a barlike body composed of a lampshell and two covers. The lampshell is constituted by two lateral lampshells and one middle lampshell connected therebetween. The lateral lampshells and the middle lampshell are connected together by a fixing structure. The two covers seal the front and rear sides of the lamp set separately. Furthermore, plural light-emitting modules are installed on the interior surface of the lampshell, and the transparent cover is fixed to cover the lamp set.

The invention discloses an ultrahigh-strength Al-Zn-Mg-Cu system aluminum alloy large-size flat cast ingot and a making method thereof, and belongs to the aluminum alloy making field. The flat cast ingot comprises, by mass, 2.0-2.4% of Cu, 1.95-2.5% of Mg, 5.5-9.0% of Zn, 0.08-0.15% of Zr, 0.0003-0.0015% of Be, below 0.06% of Ti, below 0.04% of Cr, below 0.10% of Mn, 0.085% or less of Si, 0.14% or less of Fe, and the balance Al and inevitable elements, wherein the content of each of the inevitable elements is lower than 0.05%, the total amount of the inevitable elements is lower than 0.15%, and a content ratio of Fe to Si is not less than 1.6. The making method disclosed in the invention improves traditional making methods, and does not need pure aluminum bottoming, and the flat cast ingot made in the invention has the advantages of large size, high strength, no cracks, and high casting success rate.

This invention discloses novel method and apparatus for producing vacuum glass. The method comprises: producing isolated supporting points between glass panels and airtight sealing layers at the edges of glass panels by screen printing process, sealing the edges, exhausting, sealing the exhaust mouth, baking, examining, and framing. The softening temperature and thermal and mechanical properties of the low-melting-point glass used for isolated supporting points and airtight sealing layers, and the thickness of isolated supporting points should precisely match the thickness of airtight sealing layers. The exhaust and sealing apparatus comprises: a sealed vacuum chamber for fixing the surface of the vacuum glass panel with exhaust holes downward onto the sealing table, and a movable ejection pin with an electric heating device below the exhaust holes; or a bell jar with a sealing ring, and movable ejection pin with an electric heating device below the exhaust holes. After exhausting, the ejection pin heats the metal plate sintered with low-melting-point glass to the sealing temperature of the low-melting-point glass, and seals by tip layering onto the exhaust holes.

A semiconductor manufacturing method analyzes topography variations in three dimensions for each photolithographic level and determines critical dimension (CD) bias compensation as inputs to mask layout creation. Accurate predictions of topography variation for a specific mask design are made at the die level using known pattern density and CMP planarization length characteristics for a specific pattern. Exhaustive characterization of the photoresist response to de-focus and mask bias is determined by artificially expanding loss of CD through focus. Mask compensation to an expanded range of focus over all lines and spaces is maintained within the specification. 3D mask density data is obtained to determine the height component at each pixel location in the die. The resulting 3D OPC model is then utilized for mask creation.

The invention relates to composition and a preparation method of silicon solar battery electrode slurry. The silicon solar battery electrode slurry comprises silicon solar battery sunny slope grid electrode silver slurry, back surface field silver-aluminium slurry and back surface field aluminium slurry which are used for preparing an ohm contact layer containing silicon alloy powder. In the invention, silver powder, aluminium powder, a simple substance element and the silicon alloy powder are used as raw materials, and an organic bond and an inorganic bond are used as accessories, and after the raw materials and the accessories are evenly mixed, a three-roller rolling mill is utilized to roll the mixture into the silicon solar battery electrode slurry of which the fineness is 20.0-25.0mum and the viscosity is 20000-40000mpa.s.