879 results about "Lead frame" patented technology

A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

The invention belongs to but not limited to the technical field of power semiconductor packaging, and discloses a packaging structure of a power semiconductor device. The power module comprises a lead frame, a plastic package body, a base island, a bonding wire and a semiconductor chip assembly, a first power unit and a second power unit are integrated, the first unit comprises two driving ICs, six IGBTs and six FRD chips, the second unit comprises two driving ICs and six MOS chips, 46 pins are provided, and functions are clearly divided. All the IC chips and the FRD chips are arranged on the same base island, the back faces of the chips are welded to the base island, and the front faces of the chips are connected with pins in a standard mode through bonding wires. The structure solves the problems of complex packaging layout, disordered connection and the like in the prior art, can drive the compressor and the fan respectively, realizes high integration level and compact layout, shortens an electric connection path, reduces parasitic parameters, reduces the overall size and cost, and improves reliability and engineering compatibility.

The invention provides a copper-nickel-tin alloy strip and a preparation method thereof, and relates to the technical field of copper alloys. The copper-nickel-tin alloy strip provided by the invention comprises the following components in percentage by mass: 8.5%-10% of Ni, 1.5%-3% of Sn, 0.5%-1.5% of Al, 0.3%-0.6% of Si, 0.19%-0.21% of Cr, 0.05%-0.30% of Mn and the balance of Cu. The tensile strength of the copper-nickel-tin alloy strip ranges from 580 MPa to 770 MPa, the percentage elongation after fracture A50 is larger than or equal to 8%, the hardness ranges from 170 HV to 240 HV, the electric conductivity is larger than or equal to 10% IACS, and the grain size is smaller than or equal to 0.015 mm. And the material can be stably applied to elastic sensitive elements of electronic industrial relays, potentiometers, switches, connectors, lead frames, control and instrument sensors and the like.

The invention provides a dual-chip die-bonding chip mounter, and relates to the technical field of semiconductor packaging, and the dual-chip die-bonding chip mounter comprises a chip mounter main body, a lead frame feeding mechanism is hung on the left side of the chip mounter main body, and a lead frame receiving mechanism is hung on the right side of the chip mounter main body; the lead frame conveying mechanism is installed in a working area inside the chip mounter main body, the left end of the lead frame conveying mechanism is attached to a discharging port of the lead frame feeding mechanism, and the right end of the lead frame conveying mechanism is attached to a feeding port of the lead frame receiving mechanism; the whole process is automatically circulated from empty frame feeding, conveying to finished product receiving, manual frequent intervention and turnover are not needed, the labor intensity is reduced, the automation level and operation continuity of a production line are improved, and the problems that manual intervention or cooperative operation of multiple sets of manipulators is often needed, the automation degree is limited, high integration of feeding and discharging mechanisms cannot be achieved, and the production efficiency is high are solved. The overall coordination of the equipment is insufficient; and the time consumption of the die bonding and surface mounting process is long.

The invention discloses a photoelectric integrated semiconductor packaging structure with a lead frame and a preparation method thereof, the front surface of the lead frame is divided into an electrical connecting part and a chip accommodating part through a limiting structure, the surface of the chip accommodating part is lower than the surface of the electrical connecting part, and the limiting structure comprises a first step and a second step which are arranged in a stepped manner; the first step is provided with a first groove, the second step is provided with a second groove, the chip accommodating part is used for being electrically connected with an electric chip, an optical chip is stacked above the electric chip, the first groove is used for clamping the end part of the electric chip, and the second groove is used for clamping the end part of the optical chip. The optical chip and the electric chip are supported through the lead frame, the chips are prevented from deviating, and stable performance of the packaging structure is guaranteed; the chip can also assist in heat dissipation through the lead frame, so that the problem of serious heat accumulation in the chip is solved; the whole packaging structure is simple in preparation method, the cost is reduced, and large-scale production is facilitated.

The invention discloses an electrode assembly for a high-power pulse xenon lamp and a preparation method of the electrode assembly, and aims to overcome the technical defects that a traditional electrode is large in mass and poor in reliability and stability. The electrode assembly is mainly composed of an electrode tip, an electrode stem and a lead seat which are made of cerium-tungsten alloy, niobium and stainless steel. The electrode tip and the electrode rod are stably connected in a mode of combining brazing with interference connection, and the electrode rod and the lead seat adopt a multi-connection structure of brazing, threaded mechanical connection and micro interference connection; the assembled electrode assembly is subjected to degassing, brazing connection and electrode activation treatment at a time in a high-temperature and high-vacuum environment, and the problem of electrode material pollution caused by repeated heating is effectively avoided. The electrode assembly is simple in overall structure, reliable in preparation, excellent in current passing ability, capable of bearing impact force under extreme working conditions and outstanding in burning loss resistance, reliability and stability are remarkably improved, and the long-term stable working requirement and large-scale mass production of the high-power pulse xenon lamp are met.

The utility model discloses a lead frame resistant to stacking inclination, and belongs to the technical field of lead frames. Comprising a frame main body on which a plurality of chip mounting units are arranged in an array; the chip mounting unit comprises a slide holder and a pin structure, and the slide holder is connected with the frame main body through the pin structure; the pin structure is formed by integrally connecting an inner pin and an outer pin, and the outer pin is arranged on the frame main body; the inner pin comprises an inclined connecting section extending from the outer pin to the slide holder, and a linear supporting section vertically extending from the tail end of the inclined connecting section to the slide holder; when the frame main bodies are stacked in a multi-layer stacking mode, the upper surface of the lower-layer slide holder and the lower end of the upper-layer linear supporting section form vertical bearing fit, the lower-layer inclined connecting section and the upper-layer outer pins form transverse limiting fit, stacking stability is achieved through composite contact constraint in the vertical direction and the horizontal direction, and it is ensured that stacking is not inclined; and the situation that the position of the vacuum suction nozzle needs to be frequently adjusted when a packaging mold manufacturer grabs is avoided.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly structures for LED packages with multiple LED chips are disclosed. LED package structures include arrangements of one or more of body structures with multiple cavities for LED chips, encapsulants with lenses registered with the multiple cavities, and lead frame structures at least partially within the body structures. Cavities of body structures and / or corresponding lenses are disclosed with certain asymmetries configured to direct highest intensities of LED chip emissions in directions that are offset from cavity centers. Body structures are disclosed with one or more continuously planar surfaces that promote enhanced flexibility in encapsulant and / or lead frame structures and improved resistance to moisture ingress. One or more combinations of cavities and / or lenses asymmetries may be implemented in combination with one or more continuously planar body surfaces.

The present disclosure provides a package including a die, a first leadframe and a second leadframe. The first leadframe and the second leadframe are stacked and bonded together by using adhering substance to form a final leadframe. The die is bonded to the final leadframe. By using the package of the embodiments, the package includes appropriate signal transmission paths and multi-directional heat dissipation paths.

The application discloses a power module, comprising: a plurality of low-side transistors, a plurality of high-side transistors, a first gate drive chip and a second gate drive chip, the first gate drive chip drives the plurality of low-side transistors, the second gate drive chip drives the plurality of high-side transistors, the plurality of low-side transistors, the plurality of high-side transistors, the first gate drive chip and the second gate drive chip are mounted on a plurality of base islands of the power module; a lead frame, the lead frame has a plurality of pins; a plastic package, comprising opposite first and second side edges and opposite third and fourth side edges, the plastic package covers the lead frame, the plurality of low-side transistors, the plurality of high-side transistors, the first gate drive chip and the second gate drive chip; the plurality of pins of the lead frame respectively extend from the first, second, third and fourth side edges of the plastic package to the outside of the plastic package. The power module greatly reduces the overall volume of the module and significantly reduces the cost.

This invention relates to the field of electroplating equipment technology, and more particularly to an electroplating device for high-density integrated circuit lead frames that facilitates the switching of plating molds; it includes a dual-wheel selectable electroplating module and a single-wheel electroplating module; the dual-wheel selectable electroplating module includes a small wheel mounting mechanism and a large wheel mounting mechanism, and includes a dual-mode mounting plate, a small mold wheel, a large mold wheel, a liquid supply pipe, a power shaft, an auxiliary shaft, and a support shaft; the dual-mode mounting plate is provided with a liquid pipe hole, a first power shaft hole, a second power shaft hole, a first auxiliary shaft hole, a second auxiliary hole, a first support shaft hole, and a second support shaft hole; by mounting the power shaft in the first power shaft hole or the second power shaft hole, the auxiliary shaft in the first auxiliary shaft hole or the second auxiliary shaft hole, and the support shaft in the first support shaft hole or the second support shaft hole, convenient switching between the large mold wheel and the small mold wheel is realized, achieving the production purpose of quickly switching between different specifications of electroplating wheels on one machine, and reducing equipment operating costs.

The utility model relates to the technical field of semiconductor packaging, and discloses a plug-in type optocoupler lead frame, which comprises a PT lead frame and an IP lead frame, the PT lead frame comprises a first lead frame body, a plurality of first lead frame groups are arranged on the first lead frame body, the IP lead frame comprises a second lead frame body, and a plurality of second lead frame groups are arranged on the second lead frame body. A plurality of second lead frame sets are arranged on the second lead frame body, the PT lead frame and the IP lead frame are connected in a matched mode through the inserting parts, the uniqueness of the inserting direction is ensured through the width difference design of the inserting grooves and the inserting holes, assembly errors are avoided, and the assembly efficiency and reliability are improved. And the multi-point insertion part provides a certain elastic space and can disperse stress, so that the mechanical stability and the anti-seismic property of the frame are improved, and the overall connection firmness is enhanced.

The application provides an electromagnetic acoustic module, a lead frame structure and a manufacturing method, relates to the technical field of microelectronic devices, and the electromagnetic acoustic module comprises a packaging base, a lead frame embedded in the packaging base, a chip arranged on a chip bearing part, a coil support and a coil arranged on a first surface, a magnetic circuit system and a vibration system arranged on a side of the coil support away from the packaging base, and an upper cover surrounding the packaging base to form an acoustic cavity. The chip bearing part is located in a side area of the module plane, and in a plane perpendicular to the thickness direction of the packaging base, the orthographic projection of the chip bearing part and the orthographic projection of the coil support are separated from each other. In this way, the chip package and the magnetic circuit system and the vibration system can be prevented from being stacked in series in the thickness direction of the module, thereby providing a structural basis for low profile of the module, effectively improving product size precision, vibration system resonance frequency consistency, reducing manual adjustment and processes, and reducing costs compared with the existing production method.

This utility model discloses a positioning device for a lead frame stamping die, comprising a base, a support frame fixedly connected to the upper end of the base, an electric push rod fixedly connected to the upper end of the support frame, a lower pressure plate fixedly connected to the output end of the electric push rod, an upper die fixedly connected to the lower end of the lower pressure plate, a positioning rod fixedly connected to the lower end of the upper die, a plurality of first guide rods fixedly connected to the support frame, the lower pressure plate slidably connected to the plurality of first guide rods, a fixing block fixedly connected to the upper end of the base, a lower die slidably connected to the fixing block, a fixing device provided inside the fixing block, and a positioning mechanism provided at the upper end of the lower die. Through the above structure, the lower die can be stably fixed, preventing displacement or shaking during the stamping process, ensuring the stability of the stamping process, and achieving precise alignment between the upper and lower dies, ensuring the positional accuracy of the lead frame stamping, and improving product quality.

This utility model discloses a reinforced upper heat dissipation lead frame array, relating to the field of semiconductor manufacturing technology. It includes a strip body with two rows of lead frames arranged opposite each other. Two lead frames in the same row form a group. Within the same group, the substrates of the two lead frames, the inner ends of the leads of the two lead frames, and the inner ends of the heat dissipation ribs on the substrates of the two lead frames are all disconnected. Connecting ribs are provided between adjacent groups of lead frames. The two sides of the connecting ribs are spaced apart from the lead frames, and one end of the connecting rib connects to the lead of the lead frame, while the other end connects to the heat dissipation rib of the lead frame. Both ends of the connecting rib have inclined sections and elongated holes, with the inclined sections located between the two ends of the elongated holes. This utility model not only prevents lead displacement during subsequent slitting due to deformation of the inclined sections, but also ensures that the lead frame strips are stacked flat during slitting and packaging.

The present disclosure relates to a power module designed to have balanced current flow for each parallel power switch such that each power switch has a similar current path length. The power module can include a first plurality of power switches electrically coupled to a first region and a second plurality of power switches electrically coupled to a second region. A first plurality of conductive clips is configured to conduct a first plurality of currents and a second plurality of conductive clips is configured to conduct a second plurality of currents. The power module can include a first leadframe configured to apply a positive voltage to the first region, a second leadframe configured to conduct current from the second region, and a third leadframe configured to conduct current from the third region.

The invention relates to the technical field of chip packaging, and discloses a lead frame, a chip packaging module and a packaging method. The cooling fin is connected to the frame main body through a cooling fin connecting rib, one surface of the cooling fin is configured to be a cooling surface, and the surface, opposite to the cooling surface, of the cooling fin is configured to be a mounting surface for mounting a chip; one end of each pin is configured to be a connecting end, the connecting ends are connected to the frame body, the other end of each pin is configured to be a free end, the free ends extend to the cooling fins, and partition grooves are formed between the free ends and the cooling fins; after the chip is mounted on the mounting surface of the radiating fin, the connecting ends of the pins are configured to be cut off from the frame main body and bent to the chip. The lead frame has the advantages that when a chip is packaged on the lead frame, the pins of the lead frame can be tightly attached to the chip, the size of the packaged chip can be effectively reduced, the area proportion of the chip on the cooling fin is high, and the effective utilization rate of the cooling fin is high.

The invention discloses a lead frame, an SSD module and an SSD device. The scheme comprises a first base island which is used for installing a storage control chip; the second base island is used for installing a Flash; and the pin array is distributed at the periphery of the first base island. Due to the arrangement of the first base island and the second base island, the lead frame can be integrated with the storage control chip and the Flash at the same time, the SSD module can be manufactured by packaging the lead frame, the storage control chip and the Flash do not need to be independently packaged and then assembled into the SSD module, the manufacturing difficulty of the SSD module is reduced, and the packaging cost of the SSD device can be effectively reduced. The pin array in the lead frame is distributed around the first base island, so that the SSD module can be manufactured by adopting QFN packaging, and compared with BGA packaging, the packaging cost of the SSD device can be further reduced, and the profit margin of an SSD manufacturer is improved.

A power electronics device comprises a power semiconductor, a first circuit board controllingly connected to the power semiconductor, a lead frame connecting the power semiconductor and the first circuit board. The power semiconductor is connected to at least one contacting region of the lead frame in such a way that heat can be transferred from the power semiconductor to the lead frame and can be conducted away from the lead frame by the power semiconductor. The power electronics device further comprises a housing, which borders at least regions of a fluid reservoir accommodating a coolant fluid. The power semiconductor and the lead frame are arranged in the fluid reservoir and are configured to transfer heat to the coolant fluid.

A package includes a first leadframe including a plurality of leads and a conductor, a first semiconductor die mounted on a first surface of the first leadframe and attached to a first subset of the plurality of leads and the conductor, and a second semiconductor die mounted on the first surface of the first leadframe and attached a second subset of the plurality of leads and the conductor. The conductor provides a direct electrical connection for an electrical signal between the first semiconductor die and the second semiconductor die. The package further includes a second leadframe. The first leadframe is mounted on the second leadframe via a second surface of the first leadframe, the second surface opposite the first surface. The second leadframe provides a ground return path between the first semiconductor die and the second semiconductor die for the electrical signal.

The invention discloses a silicon carbide intelligent power module with voltage and current dual-detection over-current protection, and relates to the technical field of semiconductors. In order to solve the problem that when an existing silicon-based intelligent power module (IPM) is matched with a silicon carbide metal-oxide-semiconductor field effect transistor, due to the fact that the over-current protection response speed is low, interference and false triggering are likely to happen, a dual over-current protection mechanism combining desaturation voltage detection and sub-current detection is adopted. And by mixing and integrating the silicon substrate and the silicon carbide power device, the performance requirements of different application scenes are considered. Three driving control chips, six IGBT chips, six fast recovery diode chips, one SiC MOSFET chip, two silicon carbide Schottky barrier diode chips and one patch sampling resistor are integrated in the module, and all the elements are packaged in the same insulation heat dissipation substrate and lead frame combined structure, so that high integration level, high reliability and fast overcurrent protection are realized; the method can be widely applied to the fields of household appliances, industrial control, new energy and the like.

The utility model discloses a protective MOS tube, and relates to the technical field of MOS tubes. Comprising an MOS tube main body, the back surface of the MOS tube main body is provided with an assembly groove, a metal protection sheet is clamped through the assembly groove, the metal protection sheet is provided with a strip-shaped clamping groove, the MOS tube main body comprises a plastic package shell, a lead frame and an MOS chip, the lead frame is installed in the plastic package shell, and the MOS chip is welded on a bonding pad of the lead frame. According to the protection type MOS tube, when the protection type MOS tube needs to be transported or carried, the metal protection sheets are detached from the assembling grooves and clamped at the pins under the action of the strip-shaped clamping grooves, the stress surface is increased, the structural strength of the pins is improved, and therefore the protection effect is achieved, and when the protection type MOS tube is used, the metal protection sheets are detached from the pins and reassembled into the assembling grooves, so that the metal protection sheets are not damaged. And the heat-conducting copper sheet is attached to the heat-conducting copper sheet, so that the heat dissipation area can be enlarged, heat convection can be accelerated, efficient heat dissipation can be realized, and stable work of the MOS tube can be ensured.

The application discloses a sheet type laminated solid-state aluminum electrolytic capacitor and a preparation method thereof. The capacitor comprises a core package and a resin shell. The resin shell is packaged outside the core package and forms the solid-state aluminum electrolytic capacitor. The core package comprises a core package prototype, an anode lead frame and a cathode lead frame. The core package prototype comprises arc-shaped cores and metal shafts. A conductive silver paste layer is arranged in a cathode gap between two adjacent arc-shaped cores. The fixed position of the anode part of each core is at the center of the core, which is surrounded by the annular cathode part. Each core cathode part is integrally connected through the conductive silver paste, so that the whole core package presents a disc structure. The core package with the structure is more compact and has no gap. In the packaging process, the organic resin can be prevented from being squeezed into the core layers, the core deformation damage is prevented, the leakage current and ESR increase is prevented, the capacity shortage caused by the delamination between the cores and even the capacitor failure can be further prevented. Meanwhile, the cathode part of the core has a larger area and smaller ESR.

In an example, an apparatus comprises a lead frame that includes a first row of leads, a first pad coupled to the first row of leads, and a second row of leads parallel to the first row of leads. The lead frame also includes a second pad coupled to the second row of leads. The first and second pads are separated by a gap, and each of the first and second pads has a substantially uniform thickness. The apparatus also includes a device coupled to the first and second pads. The first and second pads are exposed to an exterior of the apparatus.

The present disclosure provides a coil component including: a body including a first surface and a second surface opposite to each other in a first direction, a third surface and a fourth surface opposite to each other in a second direction, and a fifth surface and a sixth surface opposite to each other in a third direction, a concave part is formed on at least one of the first surface, the second surface, the third surface and the fourth surface, and the main body comprises a magnetic material; a coil including a winding portion disposed within the body and a lead wire at least partially disposed in the recess; and a first lead frame and a second lead frame disposed on the main body, spaced apart from each other in the first direction, and connected to the lead. A ratio a / b is equal to or greater than 0.042 and equal to or less than 0.502, where a is an average length of the recess in the third direction, and b is an average length of the first lead frame and the second lead frame in the third direction.

Embodiments of the present application provide a pin grid array structure, comprising: a package lead frame; and a moisture barrier layer disposed on an upper surface of the package lead frame and covering an intersection of a package compound and the lead frame of the package lead frame. The purpose of the present application is to provide a pin grid array structure and a semiconductor structure to improve yield.

The utility model provides an integrated circuit lead frame, and belongs to the technical field of electronic information industry. The integrated circuit lead frame comprises a lead frame and a plurality of integrated circuits arranged on the lead frame at equal intervals along the length direction of the lead frame, and is characterized in that a plurality of mounting areas corresponding to the plurality of integrated circuits are arranged on the surface of the lead frame, and the plurality of integrated circuits are respectively placed on the surfaces of the plurality of mounting areas; the pin ends of the integrated circuits are electrically connected with the lead end of the lead frame, a plurality of positioning assemblies are installed, the inner periphery of the positioning assemblies is larger than the outer periphery of the integrated circuits, and the positioning assemblies are connected with the surface of the lead frame through screws. Through cooperation of the fixing part, the plurality of pin reinforcing parts and the plurality of insulating gaskets, the problems that an existing integrated circuit lead frame is difficult to disassemble and easy to damage, and the integrated circuit and the lead frame are not easy to reuse can be effectively solved.

The application provides a lead frame packaging method and packaging structure, and relates to the technical field of chip packaging. The method first provides a lead frame, and then forms accommodating grooves on the front surface of a plurality of pins. Then, a conductive ring is attached to the front surface of the pins in the plurality of accommodating grooves, wherein the conductive ring is further provided with a plurality of supporting portions, and each supporting portion is embedded between two adjacent pins. Then, a back adhesive layer is formed on the back surface of the connecting skeleton. Then, a chip is attached to the front surface. Then, a plastic encapsulation layer is formed on the front surface of the connecting skeleton. Then, the back adhesive layer is removed. Then, part of the pin area is removed, and finally, a back gold layer is formed on the back surface of the pin by electroplating. Compared with the prior art, the application improves the conductivity between the pins by setting the conductive ring, slows down the current skin effect, improves the electroplating quality, and improves the process efficiency. At the same time, the adhesion of the back adhesive film is improved by setting the supporting portion, and the risk of back overflow pollution during plastic encapsulation is reduced.

The invention provides a current sensor. This current sensor is provided with: at least one magnetoelectric conversion unit; a first lead frame including a first terminal portion and a conductor portion; a signal processing IC; a second lead frame including a second terminal portion; and a sealing portion that seals the at least one magnetoelectric conversion portion, the conductor portion, the signal processing IC, and a portion of the second lead frame with a molding resin. When Tds is the shorter distance from a first side surface exposed from the first terminal portion of the sealing portion to the second lead frame or the signal processing IC, and epsilon is the relative dielectric constant of the molded resin, 523 * Tds-1 * epsilon 0.08 < 400 is satisfied, where Tds is the shorter distance from the first side surface exposed from the first terminal portion of the sealing portion to the second lead frame or the signal processing IC, and epsilon is the relative dielectric constant of the molded resin.

The utility model belongs to the technical field of semiconductors, and provides a semiconductor packaging structure which comprises a lead frame, a first chip, a second chip, a third chip and a conductive metal layer, the lead frame is provided with a first chip carrying area, a second chip carrying area and a third chip carrying area, the first chip is inversely connected to the first chip carrying area, and the second chip is inversely connected to the third chip carrying area. The second chip is inversely connected to the second slide area, the third chip is positively connected to the third slide area, and the conductive metal layer is formed on the first chip, the second chip and the third chip. The first chip and the second chip are inversely arranged on the lead frame, the third chip is positively arranged on the lead frame, the interconnection among the first chip, the second chip and the third chip and the leading-out of functional pins are realized by utilizing the specially-made lead frame and the conductive metal layer, and meanwhile, the semiconductor packaging of a leadless structure is realized; the problems of large lead resistance and loop inductance caused by the lead are effectively avoided, and the performance of the device is improved.