1910results about How to "Improve luminous performance" patented technology

An oxynitride phosphor consisting of a crystal containing at least one or more of Group II elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one or more of Group IV elements selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth element being an activator R, thereby providing a phosphor which is excited by an excitation light source at an ultraviolet to visible light region and which has a blue green to yellow luminescence color that is wavelength converted.

An organic electroluminescent device comprising a pair of electrodes, and a first organic layer and a second organic layer disposed between electrodes, the first organic layer and the second organic layer being formed by coating a solution, the second organic layer being formed on the first organic layer, wherein the first organic layer contains a polymer having carrier transporting property or light emitting property, and a low-molecular crosslinking agent having a functional group, and the low-molecular corsslinking agent is crosslinked in the first organic layer.

Semiconductor nanoparticles having high luminescence properties that are preferable for applications and uses of biotechnology are provided. With the use of electric charges on the surfaces of particles, the particles and selected polymers are allowed to electrostatically bind to each other, such that the surfaces of the particles are coated. The polymers are allowed to crosslink to each other, resulting in the improved durability of the particles. Further, functional groups contained in the polymers are exposed on the surfaces of the particles. Accordingly, semiconductor nanoparticles that are preferably utilized for applications such as staining and labeling of biopolymers have been synthesized.

An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1-u-vN (0<u, v<1) deposited as thick as 1.0 micron or more. The present invention will easily provide a high luminous efficiency GaN based semiconductor light-emitting device without using any complicated processes such as electron-beam irradiation or thermal annealing.

This invention relates to luminescent materials for ultraviolet light or visible light excitation containing lead and/or copper doped chemical compounds. The luminescent material is composed of one or more than one compounds of aluminate type, silicate type, antimonate type, germanate/or germanate-silicate type, and/or phosphate type. Accordingly, the present invention is a good possibility to substitute earth alkaline ions by lead and copper for a shifting of the emission bands to longer or shorter wave length, respectively. Luminescent compounds containing copper and/or lead with improved luminescent properties and also with improved stability against water, humidity as well as other polar solvents are provided. The present invention is to provide lead and/or copper doped luminescent compounds, which has high color temperature range about 2,000K to 8,000K or 10,000K and CRI over 90.

The present invention relates to an organic electroluminescent device. There is provided an organic electroluminescent device with a good luminescence property and high luminous efficiency in which the organic electroluminescent device has a diffraction grating 2 on the surface of the substrate 1 and an organic EL layer 5 including an emission layer between an anode 4 an a cathode 6 via an intermediate layer 3.

A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

The invention discloses a method to intelligent eliminating ghost. It includes the following steps: digitalizing the image processing signal; judging the image whether static according to the image signal; judging the last display time span whether exceeding the preset value; if the span time exceeding the preset value, supplying light emitting function recovering chance for the imate. Thus, the light emitting function of the high brightness area would maintain longer, and because naked eye is not sensitive to the small and slow change of location and brightness, it doesn't influence the visual effect and can effectively decrease the chance of having ghost. Thus, the using life of the monitor would be prolonged.

In an illumination apparatus for plant growth using LEDs, a light source emitting mixed color light of red and blue is dominant light source. However, actually, the luminescence intensity of red light is weaker than that of blue light, and the color is adjusted by the number of lamps used. Thus, a small number of blue LEDs are interspersed among a large number of red LEDs, and there is a problem in that it is not possible to make irradiation of blue light uniform. The present invention provides a multicolor light emitting diode lamp in which a blue LED and a AlGaInP-based red LED having high luminescence efficiency, balancing with the blue LED are mounted in the same package. The red LED includes a light emitting section including a light emitting layer having a composition formula, (Al_XGa_1-X)_YIn_1-YP (0≦X≦1 and 0<Y≦1). The red LED emits at least as many photons as the blue LED when the same electric current is flowed. For example, when a strong red light is desirable for plant growth, by mounting two red LEDs and one blue LED, a desired mixed color is obtained with one lamp, and irradiation of light can be made uniform.

PCT No. PCT/JP97/00681 Sec. 371 Date Dec. 31, 1998 Sec. 102(e) Date Dec. 31, 1998 PCT Filed Mar. 5, 1997 PCT Pub. No. WO98/39268 PCT Pub. Date Sep. 11, 1998Provided is a luminous or fluorescent artificial stone composition in which the resin content is 11% by weight or less, from 0.3 to 1.0 W1 of a weight (W1) of a fine powder component of an inorganic material having a size of from 10 to 70 mesh is a fine powder component of a transparent inorganic material, and a weight (W2) of a finely divided component of an inorganic material having a size of 100 mesh-under and a weight (W3) of a luminous or fluorescent component of 100 mesh-under have the following relationshipW1:(W2+W3)=1:2 to 5:1W2:W3=1:2 to 5:1.

Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.

Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of Al_XGa_1-XN (0≦X<1) by activating, with plasma, and thereby reacting at least a metallic Ga source and a gas containing a group V element, and the underlying layer 14 is formed on the buffer layer 12.

The invention discloses a gold-wire-free LED device. The LED chip is flipped on a substrate, and the P pole and N pole of the LED chip are led to the second metal electrode layer on the lower surface of the substrate through a through hole on the substrate. A heat dissipation metal pad is provided on the lower surface to realize the purpose of separating thermoelectric channels of the LED device, and greatly enhance the heat dissipation performance and reliability of the LED device. At the same time, the present invention also has a multi-layer packaging structure, the light conversion material layer can be far away from the LED chip, effectively prevents the thermal quenching effect of the light conversion material, and greatly improves the uniformity of light color of the LED device.

The invention provides an organic-inorganic hybrid perovskite quantum dot and a preparation method thereof. The quantum dot is prepared by taking siloxane with amino terminated as ligand and adopting a re-precipitation method aided by the ligand. The quantum dot comprises a core, and a general formula of the core is CH3NH3AX3 or (C6H5NH3)2AX4, wherein A is selected from transition metal element, and X is selected from halogen; a silicon dioxide layer is arranged on the surface of the organic-inorganic hybrid perovskite quantum dot. The siloxane with amino terminated is adopted as the ligand, so that size of the perovskite quantum dot can be controlled better, and luminous performance is stable. In addition, siloxane with amino terminated is used, and the re-precipitation method aided by the ligand is adopted, and the silicon dioxide layer is formed on the surfaces of perovskite nanoparticles, so that water oxygen stability of a perovskite nano material can be improved, and feasibility of the nano material in actual application is improved.

A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

The invention discloses a condensed-ring compound and a preparation method and an application thereof. The condensed-ring compound has a structure represented by formula (I) or formula (II). The HOMOand LUMO energy levels of the fused-ring compound are completely separated, so that the energy gap width of the material is reduced, the three-wire energy level is improved, and the energy backflow from the object material to the main material is avoided to reduce the luminous efficiency; HOMO and LUMO energy levels are matched with adjacent materials, and the driving voltage is small. The devicehas large molecular structure size and good intramolecular conjugation, so it has good thermal stability, can avoid thermal decomposition of materials during film formation or use, avoids loss of material layer function, and improves luminous efficiency and luminous performance of the device. The invention also provides a preparation method of the fused-ring compound and its application as an organic electroluminescent material.

The present invention is directed to a display device assembly which comprises a display device and a luminance enhancement structure. The luminance enhancement structure is directly laminated onto an ITO layer with an adhesive. The assembly of the present invention provides improved performance of the luminance enhancement structure.

The present invention relates to semiconductor field, especially relates to an oxynitride luminescent material, preparation method and its application. The oxynitride has a chemical formula of A_xB_yO_zN_{2/3x+4/3y−2/3z}:R, wherein A is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Zn; B is one or more elements selected from the group consisting of Si, Ge, Zr, Ti, B, Al, Ga, In, Li, and Na, and at least contains Si. The oxynitride luminescent material according to the invention is excellent in chemical stability and luminescence property, and act as cyan to red luminescent material applicable to white light LED that excited by ultraviolet or blue light LED. Its excited wavelength is between 300-500 nm, while the emission wavelength at 470-700 nm. With blue or ultraviolet or near-ultraviolet LED, this type of material can be used to produce white light illumination or display light source.