5 results about "Rocking curve" patented technology

Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle φ of more than 0°, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.

An ion implanter that facilitates channeling an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter includes an ion source that generates an ion beam, a platen that supports a workpiece having a crystalline structure, an X-ray source that generates an X-ray beam, where at least a portion of the X-ray beam impinges on the workpiece to generate diffracted X-rays, an X-ray detector positioned to receive the diffracted X-rays, and a controller in communication with the X-ray source, the platen, and the X-ray detector. The controller includes instructions that enable the ion implanter to perform a rocking curve test after the workpiece is placed on the platen and calculate an orientation of the platen for the ion implantation process based on results of the rocking curve test to facilitate channeling the ion beam into the crystalline structure of the workpiece.

An axial direction adjustment system for a purification furnace according to one embodiment may include an X-ray generator that irradiates X-rays in real time onto a crystal being grown as a single crystal, a sensor unit that detects X-rays reflected from the crystal, a control unit that calculates the full width at half maximum (FWHM) of a rocking curve generated by analyzing X-rays acquired from the sensor unit and generates a command to control the direction of a rotation axis connected to the single crystal according to the result of the calculated full width at half maximum, and an adjustment unit that adjusts the rotation axis based on the control command of the control unit.

An ion implanter that facilitates channeling an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter includes an ion source that generates an ion beam, a platen that supports a workpiece having a crystalline structure, an X-ray source that generates an X-ray beam, where at least a portion of the X-ray beam impinges on the workpiece to generate diffracted X-rays, an X-ray detector positioned to receive the diffracted X-rays, and a controller in communication with the X-ray source, the platen, and the X-ray detector. The controller includes instructions that enable the ion implanter to perform a rocking curve test after the workpiece is placed on the platen and calculate an orientation of the platen for the ion implantation process based on results of the rocking curve test to facilitate channeling the ion beam into the crystalline structure of the workpiece.

The present application provides a composite substrate in which a high-quality AlN single crystal layer is firmly bonded to a support substrate. The composite substrate includes a support substrate and an AlN single crystal layer bonded to the support substrate. The AlN single crystal layer has a (0002) plane with an X-ray rocking curve half-value width of 20 to 350 arcsec, a (10-12) plane with an X-ray rocking curve half-value width of 20 to 500 arcsec, and a defect density of 1.0 x 10 3 cm 7 -1.0 x 10 －2 cm