13 results about "Rocking curve" patented technology

The invention provides a three-dimensional neutron diffraction data processing method and system for a single crystal material, and the method comprises the steps: carrying out the rough scanning of a single crystal sample through a pole figure mode, and determining the rotation center of a single crystal sample signal; performing fine scanning at the rotation center to obtain a three-dimensional neutron diffraction signal; decomposing the three-dimensional neutron diffraction signal to obtain a diffraction peak curve and a rocking curve plane; correcting the coordinates of the rocking curve plane; decomposing the corrected rocking curve plane to obtain a rocking curve; and according to the diffraction peak curve and the rocking curve, quantitatively analyzing interplanar spacing and orientation distribution information in the three-position diffraction signal. The method can realize nondestructive characterization of the internal microstructure of the single crystal material, provides accurate data support for research of lattice strain distribution and orientation characteristics, and can realize synchronous characterization analysis of lattice spacing and orientation distribution information.

Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

An ion implanter that facilitates directing an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises: an ion source for generating an ion beam; the bedplate is used for supporting a workpiece with a crystal structure; an X-ray source for generating an X-ray beam wherein at least a portion of the X-ray beam impinges on the workpiece to generate diffracted X-rays; an X-ray detector positioned to receive the diffracted X-rays; and a controller in communication with the X-ray source, the platen, and the X-ray detector. The controller includes instructions to enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen; and calculating the orientation of the platen for the ion implantation process based on the results of the rocking curve test to facilitate directing the ion beam into the crystalline structure of the workpiece.

Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle φ of more than 0°, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.

An ion implanter that facilitates channeling an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter includes an ion source that generates an ion beam, a platen that supports a workpiece having a crystalline structure, an X-ray source that generates an X-ray beam, where at least a portion of the X-ray beam impinges on the workpiece to generate diffracted X-rays, an X-ray detector positioned to receive the diffracted X-rays, and a controller in communication with the X-ray source, the platen, and the X-ray detector. The controller includes instructions that enable the ion implanter to perform a rocking curve test after the workpiece is placed on the platen and calculate an orientation of the platen for the ion implantation process based on results of the rocking curve test to facilitate channeling the ion beam into the crystalline structure of the workpiece.

An axial direction adjustment system for a purification furnace according to one embodiment may include an X-ray generator that irradiates X-rays in real time onto a crystal being grown as a single crystal, a sensor unit that detects X-rays reflected from the crystal, a control unit that calculates the full width at half maximum (FWHM) of a rocking curve generated by analyzing X-rays acquired from the sensor unit and generates a command to control the direction of a rotation axis connected to the single crystal according to the result of the calculated full width at half maximum, and an adjustment unit that adjusts the rotation axis based on the control command of the control unit.

An ion implanter that facilitates channeling an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter includes an ion source that generates an ion beam, a platen that supports a workpiece having a crystalline structure, an X-ray source that generates an X-ray beam, where at least a portion of the X-ray beam impinges on the workpiece to generate diffracted X-rays, an X-ray detector positioned to receive the diffracted X-rays, and a controller in communication with the X-ray source, the platen, and the X-ray detector. The controller includes instructions that enable the ion implanter to perform a rocking curve test after the workpiece is placed on the platen and calculate an orientation of the platen for the ion implantation process based on results of the rocking curve test to facilitate channeling the ion beam into the crystalline structure of the workpiece.

Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

The application provides a three-dimensional neutron diffraction data processing method and system of a single crystal material, comprising the following steps: performing rough scanning on a single crystal sample through a polar diagram mode to determine a rotation center of a single crystal sample signal; performing fine scanning at the rotation center to obtain a three-dimensional neutron diffraction signal; decomposing the three-dimensional neutron diffraction signal to obtain a diffraction peak curve and a rocking curve plane; correcting coordinates of the rocking curve plane; decomposing the corrected rocking curve plane to obtain a rocking curve; and quantitatively analyzing crystal face spacing and orientation distribution information in the three-dimensional diffraction signal according to the diffraction peak curve and the rocking curve. The application can non-destructively characterize the internal microstructure of the single crystal material, provides accurate data support for studying lattice strain distribution and orientation characteristics, and can further synchronously characterize and analyze the lattice spacing and orientation distribution information.

The present invention discloses a microchannel plate collimator X-ray detection device and detection method, comprising an X-ray source, a stage, a collimator, an X-ray camera, and a shielding device. The stage is provided with a through hole, the collimator is disposed on the stage and is located on the rear side of the stage, the X-ray source and the X-ray camera are disposed in front and behind the collimator, respectively, and the X-ray source, collimator, and X-ray camera are located on the same axis. The detection device of the present invention significantly shortens the distance between the X-ray source and the X-ray camera, thereby reducing the size of the detection device and lowering costs. The method of use thereof can obtain a two-dimensional rocking curve through a single measurement. Moreover, the light source distance is short, the particle flux is large, and the single measurement time is short, effectively improving the efficiency of the detection operation while reducing the risk of personnel exposure.

The application provides a two-dimensional diffraction data processing method and system of a two-phase single crystal material, is applied to neutron / X-ray diffraction two-dimensional surface detector data analysis of the two-phase single crystal material, each point diffraction intensity and direction information in the detector are extracted pixel by pixel, and one-dimensional rocking curves obtained by integrating along the eta direction are used to separate two-dimensional diffraction data corresponding to each subgrain, and finally two-dimensional diffraction data are fitted by using two-dimensional double Gaussian functions, and the crystal plane spacing and orientation information of the two phases in the subgrain are quantitatively analyzed. The application solves the problem of difficult peak separation caused by the overlapping of two-dimensional diffraction signals caused by subgrains and two-phase structures.

An ion implanter that facilitates directing an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises: an ion source for generating an ion beam; the bedplate is used for supporting a workpiece with a crystal structure; an X-ray source for generating an X-ray beam wherein at least a portion of the X-ray beam impinges on the workpiece to generate diffracted X-rays; an X-ray detector positioned to receive the diffracted X-rays; and a controller in communication with the X-ray source, the platen, and the X-ray detector. The controller includes instructions that enable the ion implanter to perform a wobble curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for the ion implantation process based on results of the wobble curve test to facilitate directing the ion beam into the crystalline structure of the workpiece.

The present application provides a composite substrate in which a high-quality AlN single crystal layer is firmly bonded to a support substrate. The composite substrate includes a support substrate and an AlN single crystal layer bonded to the support substrate. The AlN single crystal layer has a (0002) plane with an X-ray rocking curve half-value width of 20 to 350 arcsec, a (10-12) plane with an X-ray rocking curve half-value width of 20 to 500 arcsec, and a defect density of 1.0 x 10 3 cm 7 -1.0 x 10 －2 cm