4results about How to "Improve ferroelectric properties" patented technology

This application discloses a two-dimensional germanium-based perovskite ferroelectric semiconductor material, its preparation method, and its applications, belonging to the field of materials science. The molecular formula of the two-dimensional germanium-based perovskite ferroelectric semiconductor material is [CH3(CH2)]. n The molecule is NH3]2CsGe2I7, where n = 2, 3, or 4. This material possesses excellent physicochemical properties, such as semiconductor characteristics, ferroelectricity, and piezoelectricity. The preparation method of this invention allows for the preparation of this material using a simple solution method at low cost. This material has potential applications in ferroelectric, optoelectronic, and other fields.

The application discloses an iron-based barium sodium niobate ceramic material with high energy storage performance and a preparation method thereof. 4‑2x Sm 2x Na2Fe x Nb 10‑x O 30 , wherein 1<=x<=1.25. Barium carbonate, samarium oxide, sodium carbonate, ferrous oxide and niobium pentoxide are used as raw materials, and a standard solid-phase method is adopted to sinter the iron-based barium sodium niobate ceramic material. In the product formula, iron is used to replace niobium in the barium sodium niobate, which is lead-free, environment-friendly, rich in iron reserves and low in price, and is beneficial to control the cost of raw materials. In addition, the iron replacement is beneficial to enhance the relaxor ferroelectric performance of the material, can obtain a more slender hysteresis loop, and improves the energy storage efficiency of the material. The prepared ceramic material has few pores and cracks, high density, and the microstructure is obviously improved, the grain size is more fine and uniform, the ferroelectric polarization intensity and the breakdown field strength are significantly improved, the problem that the barium sodium niobate material is difficult to sinter is solved, and the ferroelectric performance and the energy storage performance are significantly improved.

The invention discloses a ferroelectric device processing method, a ferroelectric device and a ferroelectric memory, oxygen atoms are controlled to rapidly permeate into a lattice structure of a ferroelectric film under a supercritical condition, oxygen vacancies are effectively filled, deep oxidation repair can be realized in a low-temperature environment, the ferroelectric characteristic of the device is further improved, and the performance of the ferroelectric device is improved. The residual polarization intensity is increased, the durability of the ferroelectric device is effectively improved, the wake-up effect is relieved, and the data retention time is prolonged.

The invention relates to the technical field of semiconductor devices, and provides a ferroelectric transistor and a preparation method and application thereof.The preparation method of the ferroelectric transistor comprises the following steps that a semiconductor layer is formed on a substrate, after patterning and etching are completed through a photoetching technology, the semiconductor layer is thermally oxidized at a preset temperature, the semiconductor layer is converted into a ferroelectric layer in situ, and the ferroelectric layer is formed; forming a heterostructure of the two; then photoetching and exposing source and drain electrode patterns, depositing metal through electron beams or thermal evaporation, and finishing source and drain electrode patterning in combination with a Lift-off process; preparing a dielectric layer on the ferroelectric layer by an atomic layer deposition method; and finally, photoetching and exposing the pattern of the top electrode, and completing the preparation of the top electrode through evaporation and Lift-off processes. According to the method, an atomic-scale ultra-flat uniform interface is realized, the adverse effect of an interface defect state and a depolarization field on ferroelectric performance can be effectively inhibited, the device has the advantages of low working voltage, high fatigue resistance and high-speed response, meanwhile, the device has the advantages of low thermal budget, high process compatibility and high expandability, and the overall device is excellent in performance.